CN103594921A - Manufacturing method of laser diode with n type epitaxial substrate - Google Patents
Manufacturing method of laser diode with n type epitaxial substrate Download PDFInfo
- Publication number
- CN103594921A CN103594921A CN201310500296.9A CN201310500296A CN103594921A CN 103594921 A CN103594921 A CN 103594921A CN 201310500296 A CN201310500296 A CN 201310500296A CN 103594921 A CN103594921 A CN 103594921A
- Authority
- CN
- China
- Prior art keywords
- epitaxial substrate
- layer
- electrode
- ray structure
- gan epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention discloses a manufacturing method of a laser diode with an n type epitaxial substrate. The manufacturing method of the laser diode with the n type epitaxial substrate sequentially comprises the following steps of (1) growing the n-GaN epitaxial substrate on a sapphire substrate in an epitaxial mode, (2) forming a luminous structure on the n-GaN epitaxial substrate, (3) etching the luminous structure to remove the portion, at the periphery of the n-GaN epitaxial substrate, of the luminous structure, only reserving the portion, on the middle area of the n-GaN epitaxial substrate, of the luminous structure, and (4) forming an n electrode at the periphery of the n-GaN epitaxial substrate in a sputtering mode.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly relate to a kind of manufacture method of N-shaped epitaxial substrate laser diode.
Background technology
Zinc oxide (ZnO) is a kind of novel II-VI family direct band gap semiconductor material with wide forbidden band.Zinc oxide (ZnO) is in lattice structure, cell parameter or all similar to GaN in energy gap, and have than the higher fusing point of GaN and larger exciton bind energy, there is again the threshold value of lower luminescence generated by light and stimulated radiation and good electromechanical coupling characteristics, thermal stability and chemical stability.At room temperature, the energy gap of zinc oxide (ZnO) is 3.37eV, and free exciton is in conjunction with, up to 60meV, much larger than GaN, therefore more easily realizing exciton gain under room temperature or higher temperature.But, as generally all comprising various defects in the GaN of substrate, such as dislocation, gap or room etc., defect can cause crystal strain, strain meeting causes the quality of epitaxial loayer on substrate and performance to reduce, and causes the lost of life of laser diode.Reduce the defect concentration forming in semiconductor substrate materials growth course and become this area urgent problem.
And, in prior art, electrode is generally all formed on the mesa structure of substrate, the disclosed diode laser of Chinese granted patent CN12099976A for example, wherein metallic cathode is formed on a side of active region, the height of this metallic cathode and the height of active region almost maintain an equal level, and therefore, metallic cathode will certainly hinder luminous as the active region of ray structure, even if metallic cathode adopts transparent electric conducting material, the light that send active region also can not unimpededly see through metallic cathode; Therefore said structure also can affect luminous efficiency to a certain extent.
Summary of the invention
In order to overcome the defect existing in prior art, the invention provides a kind of manufacture method of N-shaped epitaxial substrate laser diode, the method can significantly reduce the defect concentrations in crystals in laser diode substrate, and by the special setting mode to electrode, the impact of having avoided electrode pair light-emitting zone to cause, thereby performance and the life-span of improving laser diode.
The manufacture method of the N-shaped epitaxial substrate laser diode that the present invention proposes in turn includes the following steps:
(1) epitaxial growth n-GaN epitaxial substrate in Sapphire Substrate;
(2) in n-GaN epitaxial substrate, form ray structure;
(3) described ray structure is carried out to etching, thereby the ray structure of n-GaN epitaxial substrate periphery is removed, only retain the ray structure in n-GaN epitaxial substrate central region;
(4) the peripheral sputter in n-GaN epitaxial substrate forms n electrode.
Wherein, in step (2), the technical process of the described ray structure of formation is: in n-GaN epitaxial substrate, form successively N-shaped boundary layer, luminescent layer, p-type boundary layer, p-type implanted layer and p electrode from bottom to top;
Wherein, the n electrode forming in step (4) forms around ray structure, and the thickness of the n electrode of formation is not more than the thickness of N-shaped boundary layer, and has space between n electrode and ray structure;
Wherein, N-shaped boundary layer is n-Al
xin
yga
1-x-yn, 0 < x≤1 wherein, 0 < y≤1 and x+y≤1; Luminescent layer is the multiple quantum well layer of superlattice structure, and the material that forms this multiple quantum well layer is ZnO/Zn
1-amg
ao/Zn
1-bas
bo, wherein 0 < a≤0.2,0 < b≤0.3; P-type boundary layer is p-Al
xin
yga
1-x-yp, 0 < x≤1 wherein, 0 < y≤1 and x+y≤1; P-type implanted layer is p-type NiO implanted layer; P electrode is Au, Pt, Pt/Ni, Au/Ni or ITO(tin indium oxide).N electrode is In, Al, Ga, Ag or ITO.
The manufacture method of the laser diode that the present invention proposes, can obtain following useful effect:
1. adopt n-Al
xin
yga
1-x-yn-shaped boundary layer and the p-Al of N
xin
yga
1-x-ythe p-type boundary layer of P, can effectively reduce the defect concentration forming in semiconductor substrate materials growth course;
2. adopt multiple quantum well layer ZnO/Zn
1-amg
ao/Zn
1-bas
bo, as luminescent layer, can improve the recombination probability of charge carrier greatly, improves the luminous efficiency of laser diode;
3. adopt p-type NiO to form heterojunction as hole injection layer and inject, this heterojunction has advantages of super injection, thereby further improves luminous efficiency.
4. the thickness of n electrode is set as being not more than the thickness of N-shaped boundary layer, thus the interference that the light of having avoided the luminescent layer on n electrode pair N-shaped boundary layer to send causes, and then be conducive to improve luminous efficiency.
Accompanying drawing explanation
Fig. 1-4th, the schematic flow sheet of the manufacture method that the present invention proposes.
Embodiment
Referring to Fig. 1-4, the manufacture method that the present invention proposes in turn includes the following steps:
(1) epitaxial growth n-GaN epitaxial substrate 2 in Sapphire Substrate 1; Then this n-GaN epitaxial substrate 2 is cleaned, first adopt acetone, alcohol to carry out Ultrasonic Cleaning, then adopt deionized water to rinse, to the acetone and the alcohol that remain in n-GaN epitaxial substrate 2 are cleaned up, finally by nitrogen gun, the deionized water on n-GaN epitaxial substrate 2 surfaces is air-dry;
(2) in n-GaN epitaxial substrate 2, form ray structure, the formation method of described ray structure is: form successively N-shaped boundary layer 3, luminescent layer 4, p-type boundary layer 5, p-type implanted layer 6 and p electrode 7 from bottom to top;
Wherein, the n-Al that grows in n-GaN epitaxial substrate 2
xin
yga
1-x-yn material, thus N-shaped boundary layer 3 formed; 0 < x≤1 wherein, 0 < y≤1 and x+y≤1, as preferably, 0 < x≤0.45,0 < y≤0.55;
Then by rf magnetron sputtering technique sputter ZnO layer, Zn successively on N-shaped boundary layer 3
1-amg
ao layer and Zn
1-bas
bo layer, thereby the luminescent layer 4 of formation one-period; In the present invention, in order further to improve luminous efficiency, described luminescent layer 4 can form a plurality of cycles, and concrete grammar is: on the upper surface of the luminescent layer 4 after forming one-period, (be Zn
1-bas
bon the upper surface of O layer), again by rf magnetron sputtering technique successively sputter ZnO layer, Zn
1-amg
ao layer and Zn
1-bas
bo layer, thereby the luminescent layer 4 of formation second period; So do not stop repeatedly, thereby form the luminescent layer 4 in a plurality of cycles, in the present invention, 0 < a≤0.2,0 < b≤0.3; As preferably, 0 < a≤0.1,0 < b≤0.15, described luminescent layer 4 forms 10-20 cycle altogether, preferably forms 15-18 cycle.The design parameter of rf magnetron sputtering technique is: be not more than 10
-3under the background air pressure of Pa, substrate 2 temperature are heated to 220～300 ℃, sputtering power 80～120W, ZnO layer, Zn
1-amg
ao layer and Zn
1-bas
bthe sputtering time of O layer is 2～3 minutes.
Then, the p-Al that grows on the upper surface of luminescent layer 4
xin
yga
1-x-yp, thus p-type boundary layer 5 formed, 0 < x≤1 wherein, 0 < y≤1 and x+y≤1, as preferably, 0 < x≤0.45,0 < y≤0.55;
After this, adopt method deposit p-type NiO material on p-type boundary layer 5 of reactive sputtering, to form p-type implanted layer 6.Concrete technical process is: adopting highly purified metal Ni as target, is 10 at background air pressure
-4under the atmosphere of Pa, deposition temperature is set as to 350 ℃, deposit air pressure and is set as 6Pa, relatively partial pressure of oxygen O
2/ (O
2+ Ar) be set as 60%; Power setting is 230W, and sputtering time is set as: 50 minutes.
After p-type implanted layer 6 has been manufactured, splash-proofing sputtering metal material or metallic compound material are to form p electrode 7 thereon, and described metal material is Au, Pt, Pt/Ni alloy or Au/Ni alloy, and described metallic compound material is ITO(tin indium oxide);
(3) ray structure is carried out to etching; Referring to Fig. 1 and 2, on the surface of p electrode 7, apply photoresist, after photoetching, developing, unwanted photoresist is removed, expose the part that will form n electrode 8, then adopt etching technics to etch away unwanted ray structure, until expose the upper surface of n-GaN epitaxial substrate 2, the visible Fig. 2 of structure after etching;
(4) on the surface of n-GaN epitaxial substrate 2 splash-proofing sputtering metal material or metallic compound material to form n electrode 8, described metal material is In, Al, Ga or Ag, described metallic compound material is ITO(tin indium oxide), as shown in Figures 3 and 4, between n electrode 8 and ray structure, there is space.
So far the present invention has been done to detailed explanation, but the embodiment of description above the preferred embodiments of the present invention just only, it is not intended to limit the present invention.Those skilled in the art can make any modification to the present invention, and protection scope of the present invention is limited to the appended claims.
Claims (3)
1. a manufacture method for N-shaped epitaxial substrate laser diode, is characterized in that described method in turn includes the following steps:
(1) epitaxial growth n-GaN epitaxial substrate in Sapphire Substrate;
(2) in n-GaN epitaxial substrate, form ray structure;
(3) described ray structure is carried out to etching, thereby the ray structure of n-GaN epitaxial substrate periphery is removed, only retain the ray structure in n-GaN epitaxial substrate central region;
(4) the peripheral sputter in n-GaN epitaxial substrate forms n electrode.
2. the method for claim 1, is characterized in that:
The technical process that forms described ray structure in step (2) is: in n-GaN epitaxial substrate, form successively N-shaped boundary layer, luminescent layer, p-type boundary layer, p-type implanted layer and p electrode from bottom to top;
Wherein, the n electrode forming in step (4) forms around ray structure, and the thickness of the n electrode of formation is not more than the thickness of N-shaped boundary layer, and has space between n electrode and ray structure.
3. method as claimed in claim 2, is characterized in that:
Wherein, N-shaped boundary layer is n-Al
xin
yga
1-x-yn, luminescent layer is the multiple quantum well layer of superlattice structure, the material that forms this multiple quantum well layer is ZnO/Zn
1-amg
ao/Zn
1-bas
bo; P-type boundary layer is p-Al
xin
yga
1-x-yp; P-type implanted layer is p-type NiO implanted layer; P electrode is Au, Pt, Pt/Ni, Au/Ni or ITO(tin indium oxide), n electrode is In, Al, Ga, Ag or ITO;
Wherein, 0 < x≤1,0 < y≤1 and x+y≤1, preferably, 0 < x≤0.45,0 < y≤0.55;
Wherein 0 < a≤0.2,0 < b≤0.3, preferably, 0 < a≤0.1,0 < b≤0.15.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310500296.9A CN103594921B (en) | 2013-10-22 | 2013-10-22 | A kind of manufacture method of laser diode with n type epitaxial substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310500296.9A CN103594921B (en) | 2013-10-22 | 2013-10-22 | A kind of manufacture method of laser diode with n type epitaxial substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103594921A true CN103594921A (en) | 2014-02-19 |
| CN103594921B CN103594921B (en) | 2015-11-25 |
Family
ID=50084956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310500296.9A Active CN103594921B (en) | 2013-10-22 | 2013-10-22 | A kind of manufacture method of laser diode with n type epitaxial substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103594921B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107623248A (en) * | 2017-07-25 | 2018-01-23 | 昂纳信息技术（深圳）有限公司 | The method for packing and array laser device of a kind of array laser device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1174401A (en) * | 1997-07-24 | 1998-02-25 | 北京大学 | Method of using GaN/Al2O3 composite material as substrate in the epitaxial growth of III-V family nitride |
| US5889295A (en) * | 1996-02-26 | 1999-03-30 | Kabushiki Kaisha Toshiba | Semiconductor device |
| CN101888061A (en) * | 2010-06-22 | 2010-11-17 | 武汉大学 | ZnO/ZnMgO multi-quantum trap ultraviolet laser diode and preparation method thereof |
-
2013
- 2013-10-22 CN CN201310500296.9A patent/CN103594921B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5889295A (en) * | 1996-02-26 | 1999-03-30 | Kabushiki Kaisha Toshiba | Semiconductor device |
| CN1174401A (en) * | 1997-07-24 | 1998-02-25 | 北京大学 | Method of using GaN/Al2O3 composite material as substrate in the epitaxial growth of III-V family nitride |
| CN101888061A (en) * | 2010-06-22 | 2010-11-17 | 武汉大学 | ZnO/ZnMgO multi-quantum trap ultraviolet laser diode and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| HAO LONG ET AL.: "A ZnO/ZnMgO Multiple-Quantum-Well Ultraviolet Random Laser Diode", 《IEEE ELECTRON DEVICE LETTERS》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107623248A (en) * | 2017-07-25 | 2018-01-23 | 昂纳信息技术（深圳）有限公司 | The method for packing and array laser device of a kind of array laser device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103594921B (en) | 2015-11-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101888061B (en) | ZnO/ZnMgO multi-quantum trap ultraviolet laser diode and preparation method thereof | |
| CN102403417B (en) | Group III nitride nanorod light emitting device and method for manufacturing the same | |
| CN102157656B (en) | Nitride light-emitting diode capable of enhancing carrier injection efficiency and manufacturing method thereof | |
| CN102185062B (en) | III-group nitride light-emitting diode (LED) and manufacturing method thereof | |
| CN105702817B (en) | A kind of light emitting diode and preparation method thereof | |
| CN102157640A (en) | Method for manufacturing gallium nitride (GaN)-based light-emitting diode (LED) chip with p-GaN layer subjected to surface roughening | |
| CN105206726A (en) | LED structure and growth method thereof | |
| TW201421733A (en) | Nitride semiconductor structure and semiconductor light-emitting element | |
| US20110140077A1 (en) | Light emitting device | |
| CN102569541B (en) | Manufacturing method of semiconductor luminous chip | |
| CN106601884B (en) | Zno-based nano rod/compound UV LED of Quantum Well and preparation method thereof | |
| CN102760809A (en) | Light-emitting diode with N type substrate and manufacturing method thereof | |
| CN107316923A (en) | A kind of sinusoidal SQW couples enhanced GaN base light emitting | |
| CN103594921B (en) | A kind of manufacture method of laser diode with n type epitaxial substrate | |
| CN104769733A (en) | Method for forming metal particle layer, and light-emitting element produced using same | |
| CN110085713A (en) | A kind of multiple quantum well light emitting diode and preparation method thereof with insert layer | |
| CN111446335A (en) | Light emitting diode and preparation method thereof | |
| CN103594922B (en) | A kind of manufacture method of P-type epitaxial substrate laser diode | |
| CN107731971B (en) | Vertical structure LED chip based on photonic crystal and preparation method thereof | |
| CN105405947A (en) | Novel LED (Light-Emitting Diode) epitaxial wafer and preparation method thereof | |
| CN104425668B (en) | A kind of LED chip and preparation method thereof | |
| CN102760813B (en) | Light-emitting diode and manufacturing method thereof | |
| CN104465907A (en) | Method for improving electrical property of P-type gallium nitride thin film | |
| CN101859835A (en) | Light-emitting diode (LED) structure and manufacturing method thereof | |
| CN103594930B (en) | A kind of manufacture method of laser diode with n type substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170724 Address after: Licheng Town East Street Liyang city 213300 Jiangsu city of Changzhou province No. 182 Patentee after: Liyang Technology Development Center Address before: Li Town of Liyang City, Jiangsu province 213300 Changzhou City Dongmen Street No. 67 Patentee before: LIYANG DONGDA TECHNOLOGY TRANSFER CENTER CO., LTD. |
|
| TR01 | Transfer of patent right |