CN103594926A - Manufacturing method of laser diode with p type substrate - Google Patents
Manufacturing method of laser diode with p type substrate Download PDFInfo
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- CN103594926A CN103594926A CN201310500449.XA CN201310500449A CN103594926A CN 103594926 A CN103594926 A CN 103594926A CN 201310500449 A CN201310500449 A CN 201310500449A CN 103594926 A CN103594926 A CN 103594926A
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Abstract
The invention discloses a manufacturing method of a laser diode with a p type substrate. The manufacturing method of the laser diode with the p type substrate sequentially comprises the following steps of (1) providing the p type substrate, (2) forming a p type interface layer, a luminous layer, an n type interface layer, an n type injection layer and an n electrode on the p type substrate in sequence, and (3) forming a p electrode at the bottom of the p type substrate.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly relate to a kind of manufacture method of p-type substrate laser diode.
Background technology
Zinc oxide (ZnO) is a kind of novel II-VI family direct band gap semiconductor material with wide forbidden band.Zinc oxide (ZnO) is in lattice structure, cell parameter or all similar to GaN in energy gap, and have than the higher fusing point of GaN and larger exciton bind energy, there is again the threshold value of lower luminescence generated by light and stimulated radiation and good electromechanical coupling characteristics, thermal stability and chemical stability.At room temperature, the energy gap of zinc oxide (ZnO) is 3.37eV, and free exciton is in conjunction with, up to 60meV, much larger than GaN, therefore more easily realizing exciton gain under room temperature or higher temperature.But, as generally all comprising various defects in the GaN of substrate, such as dislocation, gap or room etc., defect can cause crystal strain, strain meeting causes the quality of epitaxial loayer on substrate and performance to reduce, and causes the lost of life of laser diode.Reduce the defect concentration forming in semiconductor substrate materials growth course and become this area urgent problem.
Summary of the invention
In order to overcome the defect existing in prior art, the invention provides a kind of manufacture method of p-type substrate laser diode, the method can significantly reduce the defect concentrations in crystals in laser diode substrate, improves performance and the life-span of laser diode.
The manufacture method of the laser diode that the present invention proposes in turn includes the following steps:
(1) provide p-type substrate;
(2) on p-type substrate, form successively p-type boundary layer, luminescent layer, N-shaped boundary layer, N-shaped implanted layer and n electrode;
(3) under p-type substrate, form p electrode.
Wherein, wherein, p-type boundary layer is p-Al
xin
yga
1-x-yp, 0 < x≤1 wherein, 0 < y≤1 and x+y≤1;
Wherein, luminescent layer is the multiple quantum well layer of superlattice structure, and the material that forms this multiple quantum well layer is ZnO/Zn
1-amg
ao/Zn
1-bas
bo, wherein 0 < a≤0.2,0 < b≤0.3;
Wherein, N-shaped boundary layer is n-Al
xin
yga
1-x-yn, 0 < x≤1 wherein, 0 < y≤1 and x+y≤1;
Wherein, N-shaped implanted layer is N-shaped NiO implanted layer;
Wherein, p electrode is Au, Pt, Pt/Ni, Au/Ni or ITO(tin indium oxide).N electrode is In, Al, Ga, Ag or ITO.
The manufacture method of the laser diode that the present invention proposes, can obtain following useful effect:
1. adopt p-Al
xin
yga
1-x-yp-type boundary layer and the n-Al of P
xin
yga
1-x-ythe N-shaped boundary layer of N, can effectively reduce the defect concentration forming in semiconductor substrate materials growth course;
2. adopt multiple quantum well layer ZnO/Zn
1-amg
ao/Zn
1-bas
bo, as luminescent layer, can improve the recombination probability of charge carrier greatly, improves the luminous efficiency of laser diode;
3. adopt N-shaped NiO to form heterojunction as electron injecting layer and inject, this heterojunction has advantages of super injection, thereby further improves luminous efficiency.
Accompanying drawing explanation
Fig. 1 is the structural representation of the prepared laser diode of manufacture method that proposes of the present invention.
Embodiment
Referring to Fig. 1, the manufacture method that the present invention proposes in turn includes the following steps:
(1) provide p-type substrate 2; Employing is growing p-type GaN on sapphire, after having grown, sapphire is removed, and obtains p-type GaN substrate 2; Then this p-type substrate 2 is cleaned, first adopt acetone, alcohol to carry out Ultrasonic Cleaning, then adopt deionized water to rinse, to the acetone and the alcohol that remain on substrate 2 are cleaned up, finally by nitrogen gun, the deionized water on p-type substrate 2 surfaces is air-dry;
(2) on p-type substrate 2, form successively p-type boundary layer 3, luminescent layer 4, N-shaped boundary layer 5, N-shaped implanted layer 6 and n electrode 7;
Wherein, the p-Al that grows on p-type substrate 2
xin
yga
1-x-yp material, thus p-type boundary layer 3 formed; 0 < x≤1 wherein, 0 < y≤1 and x+y≤1, as preferably, 0 < x≤0.45,0 < y≤0.55;
Then by rf magnetron sputtering technique sputter ZnO layer, Zn successively on p-type boundary layer 3
1-amg
ao layer and Zn
1-bas
bo layer, thereby the luminescent layer 4 of formation one-period; In the present invention, in order further to improve luminous efficiency, described luminescent layer 4 can form a plurality of cycles, and concrete grammar is: on the upper surface of the luminescent layer 4 after forming one-period, (be Zn
1-bas
bon the upper surface of O layer), again by rf magnetron sputtering technique successively sputter ZnO layer, Zn
1-amg
ao layer and Zn
1-bas
bo layer, thereby the luminescent layer 4 of formation second period; So do not stop repeatedly, thereby form the luminescent layer 4 in a plurality of cycles, in the present invention, 0 < a≤0.2,0 < b≤0.3; As preferably, 0 < a≤0.1,0 < b≤0.15, described luminescent layer 4 forms 5-15 cycle altogether, preferably forms 8-10 cycle.The design parameter of rf magnetron sputtering technique is: be not more than 10
-3under the background air pressure of Pa, substrate 2 temperature are heated to 220～300 ℃, sputtering power 80～120W, ZnO layer, Zn
1-amg
ao layer and Zn
1-bas
bthe sputtering time of O layer is 2～3 minutes.
Then, the n-Al that grows on the upper surface of luminescent layer 4
xin
yga
1-x-yn, thus N-shaped boundary layer 5 formed, 0 < x≤1 wherein, 0 < y≤1 and x+y≤1, as preferably, 0 < x≤0.45,0 < y≤0.55;
After this, adopt method deposit N-shaped NiO material on N-shaped boundary layer 5 of reactive sputtering, to form N-shaped implanted layer 6.Concrete technical process is: adopting highly purified metal Ni as target, is 10 at background air pressure
-4under the atmosphere of Pa, deposition temperature is set as to 350 ℃, deposit air pressure and is set as 6Pa, relatively partial pressure of oxygen O
2/ (O
2+ Ar) be set as 60%; Power setting is 230W, and sputtering time is set as: 45 minutes.
After N-shaped implanted layer 6 has been manufactured, splash-proofing sputtering metal material or metallic compound material are to form n electrode 7 thereon, and described metal material is In, Al, Ga or Ag, and described metallic compound material is ITO(tin indium oxide);
(3) at 2 times splash-proofing sputtering metal materials of substrate or metallic compound material to form p electrode 1, described metal material is Au, Pt, Pt/Ni alloy or Au/Ni alloy, described metallic compound material is ITO(tin indium oxide);
So far the present invention has been done to detailed explanation, but the embodiment of description above the preferred embodiments of the present invention just only, it is not intended to limit the present invention.Those skilled in the art can make any modification to the present invention, and protection scope of the present invention is limited to the appended claims.
Claims (4)
1. a manufacture method for laser diode, is characterized in that described method in turn includes the following steps:
(1) provide substrate;
(2) on substrate, form successively p-type boundary layer, luminescent layer, N-shaped boundary layer, N-shaped implanted layer and n electrode;
(3) under substrate, form p electrode.
2. the method for claim 1, is characterized in that:
By rf magnetron sputtering technique, form luminescent layer; The detailed process of described rf magnetron sputtering technique is: be not more than 10
-3under the background air pressure of Pa, substrate 2 temperature are heated to 220～300 ℃, sputtering power is set as 80～120W, successively sputter ZnO layer, Zn
1-amg
ao layer and Zn
1-bas
bo layer is to form described luminescent layer; Sputtering time is 2～3 minutes.
3. method as claimed in claim 2, is characterized in that:
Wherein, the specific embodiment of N-shaped implanted layer is: adopting highly purified metal Ni as target, is 10 at background air pressure
-4under the atmosphere of Pa, deposition temperature is set as to 350 ℃, deposit air pressure and is set as 6Pa, relatively partial pressure of oxygen O
2/ (O
2+ Ar) be set as 60%; Power setting is 230W, and sputtering time is set as: 45 minutes.
4. method as claimed in claim 3, is characterized in that:
Wherein, 0 < x≤1,0 < y≤1 and x+y≤1; 0 < a≤0.2,0 < b≤0.3; Preferably, 0 < x≤0.45,0 < y≤0.55; 0 < a≤0.1,0 < b≤0.15.
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| CN201310500449.XA CN103594926B (en) | 2013-10-22 | 2013-10-22 | A kind of manufacture method of laser diode with p type substrate |
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| CN103594926B CN103594926B (en) | 2016-08-17 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1174401A (en) * | 1997-07-24 | 1998-02-25 | 北京大学 | Method of using GaN/Al2O3 composite material as substrate in the epitaxial growth of III-V family nitride |
| US5889295A (en) * | 1996-02-26 | 1999-03-30 | Kabushiki Kaisha Toshiba | Semiconductor device |
| CN101888061A (en) * | 2010-06-22 | 2010-11-17 | 武汉大学 | ZnO/ZnMgO multi-quantum trap ultraviolet laser diode and preparation method thereof |
-
2013
- 2013-10-22 CN CN201310500449.XA patent/CN103594926B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5889295A (en) * | 1996-02-26 | 1999-03-30 | Kabushiki Kaisha Toshiba | Semiconductor device |
| CN1174401A (en) * | 1997-07-24 | 1998-02-25 | 北京大学 | Method of using GaN/Al2O3 composite material as substrate in the epitaxial growth of III-V family nitride |
| CN101888061A (en) * | 2010-06-22 | 2010-11-17 | 武汉大学 | ZnO/ZnMgO multi-quantum trap ultraviolet laser diode and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| HAO LONG ET AL.: "A ZnO/ZnMgO Multiple-Quantum-Well Ultraviolet Random Laser Diode", 《IEEE ELECTRON DEVICE LETTERS》 * |
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| CN103594926B (en) | 2016-08-17 |
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Effective date of registration: 20170724 Address after: Licheng Town East Street Liyang city 213300 Jiangsu city of Changzhou province No. 182 Patentee after: Liyang Technology Development Center Address before: Li Town of Liyang City, Jiangsu province 213300 Changzhou City Dongmen Street No. 67 Patentee before: LIYANG DONGDA TECHNOLOGY TRANSFER CENTER CO., LTD. |
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