CN103594926B - A kind of manufacture method of laser diode with p type substrate - Google Patents
A kind of manufacture method of laser diode with p type substrate Download PDFInfo
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- CN103594926B CN103594926B CN201310500449.XA CN201310500449A CN103594926B CN 103594926 B CN103594926 B CN 103594926B CN 201310500449 A CN201310500449 A CN 201310500449A CN 103594926 B CN103594926 B CN 103594926B
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Abstract
The invention discloses the manufacture method of a kind of laser diode, described method in turn includes the following steps: (1) provides substrate；(2) on substrate, sequentially form p-type boundary layer, luminescent layer, N-shaped boundary layer, N-shaped implanted layer and n-electrode；(3) under substrate, p-electrode is formed.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly relate to a kind of p-substrate laser two pole
The manufacture method of pipe.
Background technology
Zinc oxide (ZnO) is a kind of novel II-VI group direct band gap semiconductor material with wide forbidden band.
Zinc oxide (ZnO) lattice structure, cell parameter or in energy gap all with GaN
Similar, and there is fusing point more higher than GaN and bigger exciton bind energy, have again relatively low
Luminescence generated by light and the threshold value of stimulated radiation and good electromechanical coupling characteristics, heat endurance and change
Learn stability.At room temperature, the energy gap of zinc oxide (ZnO) is 3.37eV, freely swashs
Son combines can be up to 60meV, much larger than GaN, is therefore easier under room temperature or higher temperature
Realize exciton gain.But, typically all can include various defect, example as in the GaN of substrate
Such as dislocation, gap or room etc., defect can cause crystal to strain, outside strain can cause on substrate
Quality and the performance of prolonging layer reduce, and cause the lost of life of laser diode.Decrease semiconductor
The defect concentration formed in backing material growth course has become this area urgent problem.
Summary of the invention
In order to overcome defect present in prior art, the invention provides a kind of p-substrate and swash
The manufacture method of optical diode, the method can significantly reduce the crystalline substance in laser diode substrate
Volume defect density, improves performance and the life-span of laser diode.
The manufacture method of the laser diode that the present invention proposes in turn includes the following steps:
(1) p-substrate is provided；
(2) sequentially form on p-substrate p-type boundary layer, luminescent layer, N-shaped boundary layer,
N-shaped implanted layer and n-electrode；
(3) under p-substrate, p-electrode is formed.
Wherein, wherein, p-type boundary layer is p-AlxInyGa1-x-yP, wherein 0 ＜ x≤1,0 ＜ y
≤ 1 and x+y≤1；
Wherein, luminescent layer is the multiple quantum well layer of superlattice structure, forms this multiple quantum well layer
Material is ZnO/Zn1-aMgaO/Zn1-bAsbO, wherein 0 ＜ a≤0.2,0 ＜ b≤0.3；
Wherein, N-shaped boundary layer is n-AlxInyGa1-x-yN, wherein 0 ＜ x≤1,0 ＜ y≤1 is also
And x+y≤1；
Wherein, N-shaped implanted layer is N-shaped NiO implanted layer；
Wherein, p-electrode is Au, Pt, Pt/Ni, Au/Ni or ITO(tin indium oxide).n
Electrode is In, Al, Ga, Ag or ITO.
The manufacture method of the laser diode that the present invention proposes, it is possible to obtain following beneficial effect:
1. use p-AlxInyGa1-x-yThe p-type boundary layer of P and n-AlxInyGa1-x-yThe n of N
Type boundary layer, can effectively reduce the defect concentration formed in semiconductor substrate materials growth course；
2. use multiple quantum well layer ZnO/Zn1-aMgaO/Zn1-bAsbO is as luminescent layer, it is possible to big
Improve greatly the recombination probability of carrier, improve the luminous efficiency of laser diode；
3. use N-shaped NiO to form hetero-junctions as electron injecting layer to inject, this hetero-junctions
The advantage with super injection, thus improve luminous efficiency further.
Accompanying drawing explanation
Fig. 1 is the structural representation of the laser diode obtained by the manufacture method that the present invention proposes
Figure.
Detailed description of the invention
Seeing Fig. 1, the manufacture method that the present invention proposes in turn includes the following steps:
(1) p-substrate 2 is provided；Using growth p-type GaN on sapphire, growth completes
After, sapphire is removed, obtains p-type GaN substrate 2；Then this p-substrate 2 is carried out
Clean, carry out Ultrasonic Cleaning initially with acetone, alcohol, then use deionized water to carry out
Rinse, in order to by clean to residual acetone on the substrate 2 and alcohol washes, finally use nitrogen gun
The deionized water on p-substrate 2 surface is air-dried；
(2) on p-substrate 2, p-type boundary layer 3, luminescent layer 4, N-shaped circle are sequentially formed
Surface layer 5, N-shaped implanted layer 6 and n-electrode 7；
Wherein, p-substrate 2 grows p-AlxInyGa1-x-yP material, thus form p-type
Boundary layer 3；Wherein 0 ＜ x≤1,0 ＜ y≤1 and x+y≤1, as preferably, 0 ＜ x
≤ 0.45,0 ＜ y≤0.55；
Then by rf magnetron sputtering technique sputter successively on p-type boundary layer 3 ZnO layer,
Zn1-aMgaO layer and Zn1-bAsbO layer, thus form the luminescent layer 4 in a cycle；In the present invention
In, in order to improve luminous efficiency further, described luminescent layer 4 can be formed as multiple cycle,
Method particularly includes: (i.e. Zn on the upper surface of luminescent layer 4 forming all after date1-bAsbO
Layer upper surface on), again by rf magnetron sputtering technique sputter successively ZnO layer,
Zn1-aMgaO layer and Zn1-bAsbO layer, thus form the luminescent layer 4 of second period；The most not
Stop repeatedly, thus form the luminescent layer 4 in multiple cycle, in the present invention, 0 ＜ a≤0.2,0
＜ b≤0.3；As preferably, 0 ＜ a≤0.1,0 ＜ b≤0.15, described luminescent layer 4 is altogether
Form 5-15 cycle, preferably form 8-10 cycle.The tool of rf magnetron sputtering technique
Body parameter is: no more than 10-3Under the background air pressure of Pa, substrate 2 temperature is heated to 220～
300 DEG C, sputtering power 80～120W, ZnO layer, Zn1-aMgaO layer and Zn1-bAsbSpattering of O layer
The time of penetrating is 2～3 minutes.
Then, the upper surface of luminescent layer 4 grows n-AlxInyGa1-x-yN, thus form n
Type boundary layer 5, wherein 0 ＜ x≤1,0 ＜ y≤1 and x+y≤1, as preferably, 0
＜ x≤0.45,0 ＜ y≤0.55；
Hereafter, use the method for reactive sputtering to deposit N-shaped NiO material on N-shaped boundary layer 5,
To form N-shaped implanted layer 6.Concrete technical process is: use highly purified W metal
As target, it is 10 at background air pressure-4Under the atmosphere of Pa, deposition temperature is set as 350 DEG C,
Deposit air pressure is set as 6Pa, relative partial pressure of oxygen O2/(O2+ Ar) it is set as 60%；Power setting
For 230W, sputtering time is set as: 45 minutes.
After N-shaped implanted layer 6 has manufactured, splash-proofing sputtering metal material or metallic compound material thereon
Material is to form n-electrode 7, and described metal material is In, Al, Ga or Ag, described metallization
Laminate material is ITO(tin indium oxide)；
(3) at 2 times splash-proofing sputtering metal materials of substrate or metal compound material to form p electricity
Pole 1, described metal material is Au, Pt, Pt/Ni alloy or Au/Ni alloy, described metal
Compound-material is ITO(tin indium oxide)；
The most the present invention is described in detail, but the embodiment of description above is the most only
Being the preferred embodiments of the present invention, it is not intended to limit the present invention.Those skilled in the art can
The present invention is made any amendment, and protection scope of the present invention is limited by appended claim
Fixed.
Claims (1)
1. the manufacture method of a laser diode, it is characterised in that described method in turn includes the following steps:
(1) substrate is provided；
(2) on substrate, sequentially form p-type boundary layer, luminescent layer, N-shaped boundary layer, N-shaped implanted layer and n-electrode；
(3) under substrate, p-electrode is formed；
Luminescent layer is formed by rf magnetron sputtering technique；The detailed process of described rf magnetron sputtering technique is: no more than 10-3Under the background air pressure of Pa, substrate (2) temperature being heated to 220～300 DEG C, sputtering power is set as 80～120W, sputters ZnO layer, Zn successively1-aMgaO layer and Zn1-bAsbO layer is to form described luminescent layer；Sputtering time is 2～3 minutes；
Wherein, the specific embodiment of N-shaped implanted layer is: uses highly purified W metal as target, is 10 at background air pressure-4Under the atmosphere of Pa, deposition temperature is set as 350 DEG C, deposit air pressure be set as 6Pa, relative partial pressure of oxygen O2/(O2+ Ar) it is set as 60%；Power setting is 230W, and sputtering time is set as: 45 minutes；
Wherein, p-type boundary layer is p-AlxInyGa1-x-yP, N-shaped boundary layer is n-AlxInyGa1-x-yN, N-shaped implanted layer is N-shaped NiO implanted layer, and p-electrode is Au, Pt, Pt/Ni, Au/Ni or tin indium oxide, and n-electrode is In, Al, Ga, Ag or tin indium oxide；Wherein, 0 ＜ x≤1,0 ＜ y≤1 and x+y≤1；0 ＜ a≤0.2,0 ＜ b≤0.3.
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| CN201310500449.XA CN103594926B (en) | 2013-10-22 | 2013-10-22 | A kind of manufacture method of laser diode with p type substrate |
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| CN103594926B true CN103594926B (en) | 2016-08-17 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1174401A (en) * | 1997-07-24 | 1998-02-25 | 北京大学 | Method of using GaN/Al2O3 composite material as substrate in the epitaxial growth of III-V family nitride |
| US5889295A (en) * | 1996-02-26 | 1999-03-30 | Kabushiki Kaisha Toshiba | Semiconductor device |
| CN101888061A (en) * | 2010-06-22 | 2010-11-17 | 武汉大学 | ZnO/ZnMgO multi-quantum trap ultraviolet laser diode and preparation method thereof |
-
2013
- 2013-10-22 CN CN201310500449.XA patent/CN103594926B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5889295A (en) * | 1996-02-26 | 1999-03-30 | Kabushiki Kaisha Toshiba | Semiconductor device |
| CN1174401A (en) * | 1997-07-24 | 1998-02-25 | 北京大学 | Method of using GaN/Al2O3 composite material as substrate in the epitaxial growth of III-V family nitride |
| CN101888061A (en) * | 2010-06-22 | 2010-11-17 | 武汉大学 | ZnO/ZnMgO multi-quantum trap ultraviolet laser diode and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| A ZnO/ZnMgO Multiple-Quantum-Well Ultraviolet Random Laser Diode;Hao Long et al.;《IEEE ELECTRON DEVICE LETTERS》;20110131;第32卷(第1期);第54-56页 * |
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Effective date of registration: 20170724 Address after: Licheng Town East Street Liyang city 213300 Jiangsu city of Changzhou province No. 182 Patentee after: Liyang Technology Development Center Address before: Li Town of Liyang City, Jiangsu province 213300 Changzhou City Dongmen Street No. 67 Patentee before: LIYANG DONGDA TECHNOLOGY TRANSFER CENTER CO., LTD. |