CN103594927B - A kind of laser diode with n type substrate - Google Patents
A kind of laser diode with n type substrate Download PDFInfo
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- CN103594927B CN103594927B CN201310499248.2A CN201310499248A CN103594927B CN 103594927 B CN103594927 B CN 103594927B CN 201310499248 A CN201310499248 A CN 201310499248A CN 103594927 B CN103594927 B CN 103594927B
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Abstract
The invention discloses a kind of laser diode with n type substrate, comprise p-GaN substrate, wherein, under p-GaN substrate, there is p-electrode; P-GaN substrate has p-type boundary layer, luminescent layer, N-shaped boundary layer, N-shaped implanted layer, n-electrode successively.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly relate to a kind of laser diode with n type substrate.
Background technology
Zinc oxide (ZnO) is a kind of novel II-VI group direct band gap semiconductor material with wide forbidden band.Zinc oxide (ZnO) is in lattice structure, cell parameter or all similar to GaN in energy gap, and there is the fusing point higher than GaN and larger exciton bind energy, there is again threshold value and good electromechanical coupling characteristics, thermal stability and the chemical stability of lower luminescence generated by light and stimulated radiation.At room temperature, the energy gap of zinc oxide (ZnO) is 3.37eV, and free exciton combines can up to 60meV, much larger than GaN, therefore easilier under room temperature or higher temperature, realizes exciton gain.Such as, but generally all can comprise various defect as in the GaN of substrate, dislocation, gap or room etc., defect can cause crystal to strain, strain can cause the quality of substrate upper epitaxial layer and performance to reduce, and causes the lost of life of laser diode.Decrease the defect concentration formed in semiconductor substrate materials growth course and become this area urgent problem.
Summary of the invention
In order to overcome the defect existed in prior art, the invention provides a kind of laser diode with n type substrate, it significantly can reduce the defect concentrations in crystals in the n-type substrate of laser diode, improves performance and the life-span of laser diode.
Laser diode with n type substrate of the present invention comprises n-GaN substrate, wherein, has n-electrode under n-GaN substrate; N-GaN substrate has N-shaped boundary layer, luminescent layer, p-type boundary layer, p-type implanted layer, p-electrode successively;
Wherein, N-shaped boundary layer is n-Al
xin
yga
1-x-yn, wherein 0 < x≤1,0 < y≤1 and x+y≤1;
Wherein, luminescent layer is the multiple quantum well layer of superlattice structure, and the material of this multiple quantum well layer is ZnO/Zn
1-amg
ao/Zn
1-bas
bo, wherein 0 < a≤0.2,0 < b≤0.3;
Wherein, p-type boundary layer is n-Al
xin
yga
1-x-yp, wherein 0 < x≤1,0 < y≤1 and x+y≤1;
Wherein, p-type implanted layer is N-shaped NiO implanted layer;
Wherein, n-electrode is In, Al, Ga, Ag or ITO, and p-electrode is Au, Pt, Pt/Ni, Au/Ni or ITO(tin indium oxide).
The beneficial effect of laser diode of the present invention is:
1. adopt n-Al
xin
yga
1-x-ythe N-shaped boundary layer of N and p-Al
xin
yga
1-x-ythe p-type boundary layer of P, can effectively reduce the defect concentration formed in semiconductor substrate materials growth course;
2. adopt multiple quantum well layer ZnO/Zn
1-amg
ao/Zn
1-bas
bo, as luminescent layer, can substantially increase the recombination probability of charge carrier, improves the luminous efficiency of laser diode;
3. adopt p-type NiO to form heterojunction as hole injection layer to inject, this heterojunction has the super advantage injected, thus improves luminous efficiency further.
Accompanying drawing explanation
Fig. 1 is the structural representation of laser diode of the present invention.
Embodiment
See Fig. 1, laser diode of the present invention comprises n-GaN substrate 2, and wherein, n-GaN substrate has n-electrode 12 times; N-GaN substrate 2 has N-shaped boundary layer 3, luminescent layer 4, p-type boundary layer 5, p-type implanted layer 6, p-electrode 7 successively;
Wherein, N-shaped boundary layer 3 is n-Al
xin
yga
1-x-yn, wherein 0 < x≤1,0 < y≤1 and x+y≤1, as preferably, wherein 0 < x≤0.55,0 < y≤0.45;
Wherein, luminescent layer 4 is multiple quantum well layers of superlattice structure, and the material of this multiple quantum well layer is ZnO/Zn
1-amg
ao/Zn
1-bas
bo, wherein 0 < a≤0.2,0 < b≤0.3; As preferably, 0 < a≤0.1,0 < b≤0.15; In order to improve the recombination probability of charge carrier further, and then improve the luminous efficiency of laser diode, luminescent layer 4 can by the ZnO/Zn in multiple cycle
1-amg
ao/Zn
1-bas
bo is formed.The structure of this luminescent layer is specially: ZnO layer successively on there is Zn
1-amg
ao layer and Zn
1-bas
bo layer, these three layers are formed as the structures of sandwich, every three layers as one-period, in the present invention, form 10-20 cycle altogether, preferably 15-18 the cycle of formation.
Wherein, p-type boundary layer 5 is n-Al
xin
yga
1-x-yp, wherein 0 < x≤1,0 < y≤1 and x+y≤1, as preferably, 0 < x≤0.55,0 < y≤0.45
Wherein, p-type implanted layer 6 is p-type NiO implanted layer;
Wherein, n-electrode 7 is In, Al, Ga, Ag or ITO; P-electrode 1 is Au, Pt, Pt/Ni, Au/Ni or ITO(tin indium oxide).
So far to invention has been detailed description, but the embodiment of description above only just the preferred embodiments of the present invention, it is not intended to limit the present invention.Those skilled in the art, under the prerequisite not departing from spirit of the present invention, can make any amendment, and protection scope of the present invention are limited to the appended claims to the present invention.
Claims (1)
1. a laser diode with n type substrate, is characterized in that: comprise n-GaN substrate, wherein, has n-electrode under n-GaN substrate; N-GaN substrate has N-shaped boundary layer, luminescent layer, p-type boundary layer, p-type implanted layer and p-electrode successively;
Wherein, p-type implanted layer is hole injection layer;
Wherein, N-shaped boundary layer is n-Al
xin
yga
1-x-yn, wherein 0 < x≤1,0 < y≤1 and x+y≤1;
Wherein, luminescent layer is the multiple quantum well layer of superlattice structure, and the material of this multiple quantum well layer is ZnO/Zn
1-amg
ao/Zn
1-bas
bo, wherein 0 < a≤0.2,0 < b≤0.3;
Wherein, p-type boundary layer is p-Al
xin
yga
1-x-yp, wherein 0 < x≤1,0 < y≤1 and x+y≤1;
Wherein, p-type implanted layer is p-type NiO implanted layer;
Wherein, n-electrode is In, Al, Ga, Ag or ITO; P-electrode is Au, Pt, Pt/Ni, Au/Ni or ITO (tin indium oxide).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310499248.2A CN103594927B (en) | 2013-10-22 | 2013-10-22 | A kind of laser diode with n type substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310499248.2A CN103594927B (en) | 2013-10-22 | 2013-10-22 | A kind of laser diode with n type substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103594927A CN103594927A (en) | 2014-02-19 |
| CN103594927B true CN103594927B (en) | 2016-03-02 |
Family
ID=50084962
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310499248.2A Active CN103594927B (en) | 2013-10-22 | 2013-10-22 | A kind of laser diode with n type substrate |
Country Status (1)
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1174401A (en) * | 1997-07-24 | 1998-02-25 | 北京大学 | Method of using GaN/Al2O3 composite material as substrate in the epitaxial growth of III-V family nitride |
| US5889295A (en) * | 1996-02-26 | 1999-03-30 | Kabushiki Kaisha Toshiba | Semiconductor device |
| CN101888061A (en) * | 2010-06-22 | 2010-11-17 | 武汉大学 | ZnO/ZnMgO multi-quantum trap ultraviolet laser diode and preparation method thereof |
-
2013
- 2013-10-22 CN CN201310499248.2A patent/CN103594927B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5889295A (en) * | 1996-02-26 | 1999-03-30 | Kabushiki Kaisha Toshiba | Semiconductor device |
| CN1174401A (en) * | 1997-07-24 | 1998-02-25 | 北京大学 | Method of using GaN/Al2O3 composite material as substrate in the epitaxial growth of III-V family nitride |
| CN101888061A (en) * | 2010-06-22 | 2010-11-17 | 武汉大学 | ZnO/ZnMgO multi-quantum trap ultraviolet laser diode and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| A ZnO/ZnMgO Multiple-Quantum-Well Ultraviolet Random Laser Diode;Hao Long et al.;《IEEE ELECTRON DEVICE LETTERS》;20110131;第32卷(第1期);54-56页 * |
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|---|---|
| CN103594927A (en) | 2014-02-19 |
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Effective date of registration: 20170724 Address after: Licheng Town East Street Liyang city 213300 Jiangsu city of Changzhou province No. 182 Patentee after: Liyang Technology Development Center Address before: Li Town of Liyang City, Jiangsu province 213300 Changzhou City Dongmen Street No. 67 Patentee before: LIYANG DONGDA TECHNOLOGY TRANSFER CENTER CO., LTD. |
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