CN103594928B - A kind of p-type epitaxial substrate laser diode - Google Patents
A kind of p-type epitaxial substrate laser diode Download PDFInfo
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- CN103594928B CN103594928B CN201310500448.5A CN201310500448A CN103594928B CN 103594928 B CN103594928 B CN 103594928B CN 201310500448 A CN201310500448 A CN 201310500448A CN 103594928 B CN103594928 B CN 103594928B
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Abstract
The invention discloses a kind of p-type epitaxial substrate laser diode, comprise Sapphire Substrate, in Sapphire Substrate, there is p-GaN epitaxial substrate, in p-GaN epitaxial substrate, there is ray structure, described ray structure is arranged at the central region of p-type epitaxial substrate, and this ray structure has p-type boundary layer, luminescent layer, N-shaped boundary layer, N-shaped implanted layer and n electrode from the bottom to top successively; In the outer peripheral areas of p-GaN epitaxial substrate, there is p electrode.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly relate to a kind of p-type epitaxial substrate laserDiode.
Background technology
Zinc oxide (ZnO) is a kind of novel II-VI family direct band gap semiconductor material with wide forbidden band.Zinc oxide (ZnO) lattice structure, cell parameter or in energy gap all with GaNSimilar, and there is the fusing point higher than GaN and larger exciton bind energy, have again lowerThe threshold value of luminescence generated by light and stimulated radiation and good electromechanical coupling characteristics, heat endurance and changeLearn stability. At room temperature, the energy gap of zinc oxide (ZnO) is 3.37eV, freely swashsSon combination can be up to 60meV, much larger than GaN, therefore more easily under room temperature or higher temperatureRealize exciton gain. But, as generally all comprising various defects, example in the GaN of substrateAs dislocation, gap or room etc., defect can cause crystal strain, and strain meeting causes substrate upper outsideQuality and the performance of prolonging layer reduce, and cause the lost of life of laser diode. Reduce semiconductorThe defect concentration forming in backing material growth course has become this area urgent problem.
For example, and p electrode is generally all formed on the mesa structure of substrate, in prior artThe disclosed diode laser of China granted patent CN12099976A, wherein metallic cathode shapeBecome the side in active region, the height of this metallic cathode and the height of active region almost maintain an equal level, because ofThis, metallic cathode will certainly hinder luminous as the active region of ray structure, even metal the moonThe utmost point adopts transparent conductive material, and the light that send active region also can not unimpededly see throughMetallic cathode; Therefore said structure also can affect luminous efficiency to a certain extent.
Summary of the invention
In order to overcome the defect existing in prior art, the invention provides a kind of p-type extension liningEnd laser diode, it can significantly reduce the defect concentrations in crystals in laser diode substrate,And by the special setting mode to p electrode, avoid p electrode pair light-emitting zone to causeImpact, thereby improve performance and life-span of laser diode.
Laser diode of the present invention comprises Sapphire Substrate, in Sapphire Substrate, hasP-GaN epitaxial substrate, wherein, has p-type successively in the central region of p-GaN epitaxial substrateBoundary layer, luminescent layer, N-shaped boundary layer, N-shaped implanted layer and n electrode; P-GaN extensionIn the outer peripheral areas of substrate, there is p electrode;
Wherein, p-type boundary layer is p-AlxInyGa1-x-yP, wherein 0 < x≤1,0 < y≤1 is alsoAnd x+y≤1;
Wherein, luminescent layer is the multiple quantum well layer of superlattice structure, the material of this multiple quantum well layerFor ZnO/Zn1-aMgaO/Zn1-bAsbO, wherein 0 < a≤0.2,0 < b≤0.3;
Wherein, N-shaped boundary layer is n-AlxInyGa1-x-yN, wherein 0 < x≤1,0 < y≤1 is alsoAnd x+y≤1;
Wherein, N-shaped implanted layer is N-shaped NiO implanted layer;
Wherein, p electrode is Au, Pt, Pt/Ni, Au/Ni or ITO(tin indium oxide), instituteThe thickness of stating p electrode is not more than the thickness of described p-type boundary layer. N electrode be In, Al, Ga,Ag or ITO.
The beneficial effect of laser diode of the present invention is:
1. adopt p-AlxInyGa1-x-yP-type boundary layer and the n-Al of PxInyGa1-x-yThe n of NType boundary layer, can effectively reduce the defect concentration forming in semiconductor substrate materials growth course;
2. adopt multiple quantum well layer ZnO/Zn1-aMgaO/Zn1-bAsbO is as luminescent layer, Neng Gou greatImprove greatly the recombination probability of carrier, improved the luminous efficiency of laser diode;
3. adopt N-shaped NiO to form hetero-junctions as electron injecting layer and inject, this hetero-junctionsThere is super injection, thereby further improve luminous efficiency.
4. the thickness of p electrode is set as being not more than the thickness of p-type boundary layer, thereby avoidsThe interference that causes of the light that sends of luminescent layer on p electrode pair p-type boundary layer, and then favourableIn improving luminous efficiency.
Brief description of the drawings
Fig. 1 is the cross section structure schematic diagram of laser diode of the present invention.
Fig. 2 is the top view of laser diode of the present invention.
Detailed description of the invention
Referring to Fig. 1, p-type epitaxial substrate laser diode of the present invention comprises Sapphire Substrate 1;In Sapphire Substrate 1, there is p-GaN epitaxial substrate 2, the middle part of p-GaN epitaxial substrate 2On region, there is ray structure, described ray structure have successively from the bottom to top p-type boundary layer 3,Luminescent layer 4, N-shaped boundary layer 5, N-shaped implanted layer 6 and n electrode 7; P-GaN extension liningIn the outer peripheral areas at the end, have p electrode 8, this p electrode 8 forms around described ray structure,As shown in Figure 2; Wherein the thickness of p electrode 8 is not more than the thickness of p-type boundary layer 3, andBetween p electrode 8 and p-type boundary layer 3, there is space;
Wherein, p-type boundary layer 3 is p-AlxInyGa1-x-yP, wherein 0 < x≤1,0 < y≤1And x+y≤1, as preferably, wherein 0 < x≤0.45,0 < y≤0.55;
Wherein, luminescent layer 4 is multiple quantum well layers of superlattice structure, the material of this multiple quantum well layerMaterial is ZnO/Zn1-aMgaO/Zn1-bAsbO, wherein 0 < a≤0.2,0 < b≤0.3; As preferablyGround, 0 < a≤0.1,0 < b≤0.15; In order further to improve the recombination probability of carrier,And then improve the luminous efficiency of laser diode, what luminescent layer 4 can be by multiple cyclesZnO/Zn1-aMgaO/Zn1-bAsbO forms. The structure of this luminescent layer is specially: ZnO layer is gone up successivelyThere is Zn1-aMgaO layer and Zn1-bAsbO layer, these three layers of formation are as the structure of sandwich, every three layersAs one-period, in the present invention, form altogether 5-15 cycle, preferably form 8-10The individual cycle.
Wherein, N-shaped boundary layer 5 is n-AlxInyGa1-x-yN, wherein 0 < x≤1,0 < y≤1And x+y≤1, as preferably, 0 < x≤0.45,0 < y≤0.55
Wherein, N-shaped implanted layer 6 is N-shaped NiO implanted layer;
Wherein, p electrode 8 is Au, Pt, Pt/Ni, Au/Ni or ITO(tin indium oxide); nElectrode 7 is In, Al, Ga, Ag or ITO.
So far the present invention has been done to detailed explanation, but the embodiment of description above onlyBe the preferred embodiments of the present invention, it is not intended to limit the present invention. Those skilled in the art existDo not depart under the prerequisite of spirit of the present invention, can make any amendment to the present invention, and of the present inventionProtection domain is limited to the appended claims.
Claims (2)
1. a p-type epitaxial substrate laser diode, is characterized in that: comprise Sapphire Substrate, have p-GaN in Sapphire SubstrateEpitaxial substrate has ray structure in p-GaN epitaxial substrate;
Described ray structure is arranged at the central region of p-type epitaxial substrate, this ray structure have successively from the bottom to top p-type boundary layer,Luminescent layer, N-shaped boundary layer, N-shaped implanted layer and n electrode; In the outer peripheral areas of p-GaN epitaxial substrate, there is p electrode;
Described p electrode retaining collar is around described ray structure; The thickness of described p electrode is not more than the thickness of p-type boundary layer, and p electrode withBetween p-type boundary layer, there is space;
Wherein, p-type boundary layer is p-AlxInyGa1-x-yP, 0 < x≤1,0 < y≤1 and x+y≤1;
Wherein, luminescent layer is the multiple quantum well layer of superlattice structure, and the material of this multiple quantum well layer is ZnO/Zn1-aMgaO/Zn1-bAsbO，0＜a≤0.2、0＜b≤0.3；
Wherein, N-shaped boundary layer is n-AlxInyGa1-x-yN, 0 < x≤1,0 < y≤1 and x+y≤1;
Wherein, N-shaped implanted layer is N-shaped NiO implanted layer;
Wherein, p electrode is Au, Pt, Pt/Ni, Au/Ni or ITO; N electrode is In, Al, Ga, Ag or ITO.
2. p-type epitaxial substrate laser diode as claimed in claim 1, is characterized in that:
Further, 0 < x≤0.45,0 < y≤0.55; 0 < a≤0.1,0 < b≤0.15.
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| CN201310500448.5A CN103594928B (en) | 2013-10-22 | 2013-10-22 | A kind of p-type epitaxial substrate laser diode |
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| CN201310500448.5A CN103594928B (en) | 2013-10-22 | 2013-10-22 | A kind of p-type epitaxial substrate laser diode |
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| CN103594928A CN103594928A (en) | 2014-02-19 |
| CN103594928B true CN103594928B (en) | 2016-05-18 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5889295A (en) * | 1996-02-26 | 1999-03-30 | Kabushiki Kaisha Toshiba | Semiconductor device |
| CN101888061A (en) * | 2010-06-22 | 2010-11-17 | 武汉大学 | ZnO/ZnMgO multi-quantum trap ultraviolet laser diode and preparation method thereof |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5889295A (en) * | 1996-02-26 | 1999-03-30 | Kabushiki Kaisha Toshiba | Semiconductor device |
| CN101888061A (en) * | 2010-06-22 | 2010-11-17 | 武汉大学 | ZnO/ZnMgO multi-quantum trap ultraviolet laser diode and preparation method thereof |
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Effective date of registration: 20170726 Address after: Licheng Town East Street Liyang city 213300 Jiangsu city of Changzhou province No. 182 Patentee after: Liyang Technology Development Center Address before: Li Town of Liyang City, Jiangsu province 213300 Changzhou City Dongmen Street No. 67 Patentee before: LIYANG DONGDA TECHNOLOGY TRANSFER CENTER CO., LTD. |
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