CN103746289A - Manufacturing method of high-speed semiconductor laser and chip - Google Patents
Manufacturing method of high-speed semiconductor laser and chip Download PDFInfo
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- CN103746289A CN103746289A CN201310720952.6A CN201310720952A CN103746289A CN 103746289 A CN103746289 A CN 103746289A CN 201310720952 A CN201310720952 A CN 201310720952A CN 103746289 A CN103746289 A CN 103746289A
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Abstract
The invention discloses a manufacturing method of a high-speed semiconductor laser and a chip. The manufacturing method of the high-speed semiconductor laser comprises the following steps: a SiO2 layer grows on a first epitaxial growth layer of a ridge waveguide structure by PECVD; a BCB layer is coated on the SiO2 layer; a SiN layer grows on the BCB layer by PECVD; a photoresist layer is coated on the SiN layer; a graph is formed after exposure and development; by the utilization of the photoresist for masking, the SiN, BCB and SiO2 layers are successively etched by RIE; and an electrode contact window is exposed. The manufacturing method of the high-speed semiconductor laser chip comprises the following steps: a SiO2 layer grows on the top layer of P-InP by PECVD; BCB is coated on the SiO2 layer and passivation is carried out; a SiN layer grows on the BCB layer by PECVD, ridge waveguide etching is finished, the SiN, BCB and SiO2 layers are etched on the ridge by RIE, and current is switched and injected to a window; and P-side electrode manufacturing is finished; an epitaxial wafer is reduced thin, and N-side electrode manufacturing is finished.
Description
Technical field
The present invention relates to a kind of broadcasting and TV field, specifically refer to the manufacture method of high speed semiconductor laser.
Background technology
Traditional high speed semiconductor laser manufacture method is as follows: SiO grows on ridge waveguide structure
2layer, applies BCB, by photoetching method, obtains figure.Then by adopting RIE equipment to carry out large area dry etching BCB, only stay the bcb layer in double channel, then adopt RIE etching SiO
2layer, exposes electrode contact window, completes p side electrode and makes; By after epitaxial wafer attenuate, complete N face electrode fabrication.But the inadequate 10G high speed semiconductor laser of the modulation bandwidth obtaining requirement.BCB area is little, increases parasitic capacitance, and meanwhile, BCB is too soft, need to increase layer of sin, is unfavorable for the needs of large-scale production.
Summary of the invention
In view of this, the technical problem to be solved in the present invention is to provide a kind of high speed semiconductor laser and chip manufacture method, can obtain the above high speed semiconductor laser of 10G.
For solving the problems of the technologies described above, technical scheme of the present invention is achieved in that a kind of manufacture method of high speed semiconductor laser, PECVD growth one deck SiO on ridge waveguide structure
2layer, SiO
2on layer, apply one deck BCB again, follow PECVD growth layer of sin layer on bcb layer, at this SiN layer coating one deck photoresist, form figure after exposure imaging, utilize photoresist to shelter, RIE is etching SiN, BCB and SiO successively
2layer, exposes electrode contact window.
Further, described RIE etching adopts CF
4, O
2.
Further, described SiO
2the thickness of layer is 250 ~ 300nm.
Further, the thickness of described bcb layer is 2 ~ 3um.
Further, the thickness of described SiN layer is 100～150nm.
A manufacture method for high speed semiconductor laser chip, PECVD growth SiO on P-InP top layer
2layer; At SiO
2on layer, continue to apply BCB, then carry out passivation; On bcb layer, continue PECVD growth SiN layer, complete the photoetching of ridge waveguide, and on ridge, use RIE etching SiN layer, bcb layer, SiO
2layer, opens electric current and injects window; Completing p side electrode makes; By after epitaxial wafer attenuate, complete N face electrode fabrication.
Further, wide 1.5 ~ 2.5 μ m of the ridge of described photoetching.
Further, described SiO
2the thickness of layer is 250 ~ 300nm.
Further, the thickness of described bcb layer is 2 ~ 3um.
Further, the thickness of described SiN layer is 100～150nm.
The technique effect that the present invention reaches is as follows: this SiO successively of the present invention
2the sandwich structure of layer, bcb layer, SiN layer, can obtain high speed semiconductor laser cheaply.With conventional laser manufacture method by comparison, the inventive method is made and can be obtained meeting the above high speed semiconductor laser of 10G (large area BCB can reduce parasitic capacitance), solved again routing encapsulation below (BCB is too soft simultaneously, need to increase layer of sin layer) problem, be beneficial to the needs of large-scale production.
Accompanying drawing explanation
Fig. 1 is high speed semiconductor laser basic structure of the present invention;
Fig. 2 applies photoresist schematic diagram on passivation layer of the present invention;
Fig. 3 is schematic diagram after photoresist exposure imaging of the present invention;
Fig. 4 is the present invention CF
4and O
2gas etching SiN, BCB, SiO
2schematic diagram after layer;
Fig. 5 is that the present invention removes grating rear schematic diagram with photoresist.
Embodiment
Fig. 1-Fig. 5 is the manufacture method of a kind of high speed semiconductor laser of the present invention, PECVD growth one deck SiO on epitaxially grown layer 1 of ridge waveguide structure
2layer 3, SiO
2on layer, apply again one deck bcb layer 3((benzocyclobutane olefine resin)), on bcb layer 3, follow PECVD growth layer of sin layer 4, at this SiN layer coating one deck photoresist 5, after exposure imaging, form figure, utilize photoresist 5 to shelter, RIE is etching SiN layer 2, bcb layer 3 and SiO successively
2 layer 4, exposes electrode contact window.RIE etching adopts CF
4, O
2.SiO
2the thickness of layer 2 is 250 ~ 300nm.The thickness of bcb layer 3 is 2 ~ 3um., the thickness of SiN layer 4 is 100～150nm.
Separately, a kind of manufacture method of high speed semiconductor laser chip, PECVD growth SiO on P-InP top layer
2layer 2; At SiO
2on layer 2, continue to apply bcb layer 3, then carry out passivation; On bcb layer 3, continue PECVD growth SiN layer 4, complete the photoetching of ridge waveguide, wide 1.5 ~ 2.5 μ m of ridge of photoetching, and on ridge, use RIE etching SiN layer 4, bcb layer 3, SiO
2layer 2, opens electric current and injects window; Completing p side electrode makes; By after epitaxial wafer attenuate, complete N face electrode fabrication.SiO
2the thickness of layer is 250 ~ 300nm.The thickness of bcb layer is 2 ~ 3um.The thickness of described SiN layer 4 is 100～150nm.
1. complete ridge waveguide manufacture craft, the wide 1.8 μ m of ridge.
2. PECVD growth SiO on ridge waveguide structure
2insulating barrier, the about 300nm of thickness.
3. at SiO
2on layer, continue coating bcb layer, then carry out 300 ℃ of passivation.
4. on bcb layer, continue secondary PECVD growth SiN layer; .
5. on SiN layer, continue coating photoresist, then carry out 90 ℃ and solidify.
6. utilize mask aligner to complete the photoetching of electrode window through ray.
7. exposure imaging passivation (120 ℃), forms photoetching offset plate figure.
8. utilize exposure imaging to form photoresist and shelter, use CF
4and O
2gas etching SiN, BCB, SiO
2layer, forms electric current injection channel.
9. complete p side electrode and make, electrode material and thickness are: Ti 50nm/Pt 80nm/Au 200nm.
10. by epitaxial wafer thinning back side, be 100 μ m, then make N face electrode, electrode material and thickness are: Ti 50nm/Pt 80nm/Au 100nm.
11. cleavage, plated film, completes high speed semiconductor laser chip manufacturing.
By manufacture method of the present invention, can obtain high speed semiconductor laser chip, modulation bandwidth surpasses 10GHz.
The above, be only preferred embodiment of the present invention, is not intended to limit protection scope of the present invention.
Claims (10)
1. a manufacture method for high speed semiconductor laser, is characterized in that, PECVD growth one deck SiO on epitaxially grown layer of ridge waveguide structure
2layer, SiO
2on layer, apply one deck BCB again, follow PECVD growth layer of sin layer on bcb layer, at this SiN layer coating one deck photoresist, form figure after exposure imaging, utilize photoresist to shelter, RIE is etching SiN, BCB and SiO successively
2layer, exposes electrode contact window.
2. the manufacture method of high speed semiconductor laser as claimed in claim 1, is characterized in that, described RIE etching adopts CF
4, O
2.
3. the manufacture method of high speed semiconductor laser as claimed in claim 1, is characterized in that, described SiO
2the thickness of layer is 250 ~ 300nm.
4. the manufacture method of high speed semiconductor laser as claimed in claim 1, is characterized in that, the thickness of described bcb layer is 2 ~ 3um.
5. the manufacture method of high speed semiconductor laser as claimed in claim 1, is characterized in that, the thickness of described SiN layer is 100～150nm.
6. a manufacture method for high speed semiconductor laser chip, is characterized in that, PECVD growth SiO on P-InP top layer
2layer; At SiO
2on layer, continue to apply BCB, then carry out passivation; On bcb layer, continue PECVD growth SiN layer, complete the photoetching of ridge waveguide, and on ridge, use RIE etching SiN, BCB, SiO
2layer, opens electric current and injects window; Completing p side electrode makes; By after epitaxial wafer attenuate, complete N face electrode fabrication.
7. a manufacture method for high speed semiconductor laser chip, is characterized in that, wide 1.5 ~ 2.5 μ m of ridge of described photoetching.
8. the manufacture method of high speed semiconductor laser chip as claimed in claim 7, is characterized in that, described SiO
2the thickness of layer is 250 ~ 300nm.
9. the manufacture method of high speed semiconductor laser chip as claimed in claim 7, is characterized in that, the thickness of described bcb layer is 2 ~ 3um.
10. the manufacture method of high speed semiconductor laser chip as claimed in claim 7, is characterized in that, the thickness of described SiN layer is 100～150nm.
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| CN201310720952.6A CN103746289A (en) | 2013-12-24 | 2013-12-24 | Manufacturing method of high-speed semiconductor laser and chip |
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|---|---|---|---|
| CN201310720952.6A CN103746289A (en) | 2013-12-24 | 2013-12-24 | Manufacturing method of high-speed semiconductor laser and chip |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104966991A (en) * | 2015-06-29 | 2015-10-07 | 武汉电信器件有限公司 | Manufacturing method for novel high speed semiconductor laser |
| CN105429000A (en) * | 2015-11-25 | 2016-03-23 | 武汉电信器件有限公司 | High-speed vertical table ridge waveguide laser chip processing method |
| CN107046227A (en) * | 2017-05-16 | 2017-08-15 | 厦门市芯诺通讯科技有限公司 | A kind of BCB buries the preparation method of high speed DFB semiconductor laser |
| CN107257082A (en) * | 2017-07-05 | 2017-10-17 | 青岛海信宽带多媒体技术有限公司 | A kind of preparation method of ridge waveguide laser electrode contact window |
| CN109326955A (en) * | 2018-09-25 | 2019-02-12 | 中国科学院半导体研究所 | Semiconductor laser device high-frequency electrode device and production method |
| CN109412020A (en) * | 2018-11-26 | 2019-03-01 | 武汉电信器件有限公司 | One kind is fallen from power type high speed semiconductor laser chip and preparation method thereof |
| CN112164980A (en) * | 2020-10-09 | 2021-01-01 | 苏州苏纳光电有限公司 | Ridge passivation method of DFB chip |
| CN113013730A (en) * | 2021-02-25 | 2021-06-22 | 度亘激光技术（苏州）有限公司 | Manufacturing method of semiconductor device |
| CN115308834A (en) * | 2022-08-10 | 2022-11-08 | 松山湖材料实验室 | Integrated optical transceiver chip, optoelectronic device and optical transceiver system |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104966991A (en) * | 2015-06-29 | 2015-10-07 | 武汉电信器件有限公司 | Manufacturing method for novel high speed semiconductor laser |
| CN104966991B (en) * | 2015-06-29 | 2018-07-10 | 武汉电信器件有限公司 | A kind of production method of novel high speed semiconductor laser |
| CN105429000A (en) * | 2015-11-25 | 2016-03-23 | 武汉电信器件有限公司 | High-speed vertical table ridge waveguide laser chip processing method |
| CN105429000B (en) * | 2015-11-25 | 2018-11-02 | 武汉电信器件有限公司 | A kind of straight platform ridge waveguide laser chip processing method of high speed |
| CN107046227B (en) * | 2017-05-16 | 2019-11-22 | 厦门市芯诺通讯科技有限公司 | A kind of BCB buries the preparation method of high speed DFB semiconductor laser |
| CN107046227A (en) * | 2017-05-16 | 2017-08-15 | 厦门市芯诺通讯科技有限公司 | A kind of BCB buries the preparation method of high speed DFB semiconductor laser |
| CN107257082B (en) * | 2017-07-05 | 2020-03-17 | 青岛海信宽带多媒体技术有限公司 | Manufacturing method of electrode contact window of ridge waveguide laser |
| CN107257082A (en) * | 2017-07-05 | 2017-10-17 | 青岛海信宽带多媒体技术有限公司 | A kind of preparation method of ridge waveguide laser electrode contact window |
| CN109326955A (en) * | 2018-09-25 | 2019-02-12 | 中国科学院半导体研究所 | Semiconductor laser device high-frequency electrode device and production method |
| CN109412020A (en) * | 2018-11-26 | 2019-03-01 | 武汉电信器件有限公司 | One kind is fallen from power type high speed semiconductor laser chip and preparation method thereof |
| CN112164980A (en) * | 2020-10-09 | 2021-01-01 | 苏州苏纳光电有限公司 | Ridge passivation method of DFB chip |
| CN113013730A (en) * | 2021-02-25 | 2021-06-22 | 度亘激光技术（苏州）有限公司 | Manufacturing method of semiconductor device |
| CN115308834A (en) * | 2022-08-10 | 2022-11-08 | 松山湖材料实验室 | Integrated optical transceiver chip, optoelectronic device and optical transceiver system |
| CN115308834B (en) * | 2022-08-10 | 2024-02-09 | 松山湖材料实验室 | Integrated optical transceiver chip, optoelectronic device and optical transceiver system |
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Application publication date: 20140423 |