CN103811412A - Tungsten plug and metal wire manufacturing method - Google Patents
Tungsten plug and metal wire manufacturing method Download PDFInfo
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- CN103811412A CN103811412A CN201210454044.2A CN201210454044A CN103811412A CN 103811412 A CN103811412 A CN 103811412A CN 201210454044 A CN201210454044 A CN 201210454044A CN 103811412 A CN103811412 A CN 103811412A
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- tungsten plug
- photoresist
- metal line
- contact hole
- tungsten
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Abstract
Provided is a tungsten plug and metal wire manufacturing method. After a dry method degumming process is conducted on photoresist, vapor is utilized to conduct baking to release charges accumulated in a metal layer and a contact hole in the dry method degumming process to reduce the primary battery reaction of tungsten and caused in the acid liquid environment in a wet method degumming process, and the tungsten plug in the contact hole can be reserved. The production yield of a semiconductor device is greatly improved.
Description
Technical field
The present invention relates to semiconductor fabrication process field, specifically, is the manufacture method of a kind of tungsten plug and metal line.
Background technology
In recent years, due to semiconductor device Highgrade integration day by day, the size of contact hole is tending towards dwindling.Along with the size of contact hole is dwindled, make in Metal Contact processing procedure, metal can not well be filled in contact hole.Therefore, produced the problem that contact resistance increases.Conventionally the aluminium that, has a high conductivity is widely used as the metal of Metal Contact in processing.But, although aluminium has excellent conductivity, because its Step Coverage characteristic is poor, so be filled in unsatisfactorily in undersized contact hole.As the way of head it off, first come filling contact hole inside with the metal of Step Coverage excellent, then form metal line by aluminium deposit and graphical technique.Because tungsten has excellent Step Coverage characteristic, so be mainly used to filling contact hole.Tungsten is dystectic heating resisting metal, has and the superior heat-stability of silicon, has lower resistivity.
Figure 1A-1D is the profile that a kind of existing semiconductor technology is made the device obtaining, in order to show the conventional method of the tungsten plug (W plug) that forms semiconductor device.
Referring to Figure 1A, in a part for silicon substrate 1, form field oxide 2, in a part for field oxide 2, form conductor layer 3.In 1 total, form insulating barrier 4 at the bottom of at the bottom of the silicon that comprises field oxide 2 and conductor layer 3.Adopt contact hole mask, by photoetching and etching process, the selection part of insulating barrier 4 is carried out to etching, thereby be formed for exposing the contact hole 5 of conductor layer 3.
Among above-mentioned explanation, due to the field oxide 2 and the conductor layer 3 that form on silicon substrate 1, the surface of insulating barrier 4 is not smooth.
Referring to Figure 1B, in the total of the insulating barrier 4 including contact hole 5, form thinly barrier metal layer 6.By tungsten depositing operation, on the barrier metal layer 6 including contact hole 5, form thickly tungsten layer 8.By forming thickly tungsten layer 8, with the inside of tungsten filling contact hole 5.
Referring to Fig. 1 C, by anisotropic etching process, remove surperficial tungsten layer 8, until barrier metal layer 6 exposes, therefore form tungsten plug 7, this is corresponding to the tungsten layer 8 being filled within contact hole 5.
Referring to Fig. 1 D, after tungsten plug 7 forms, by al deposition and graphical technique, form the metal line 9 being connected with tungsten plug 7.
But in existing technique, in the time outer layer metal being carried out to etching formation metal line 9, because of gold-tinted board capabilities limits, the positioning precision of Waffer edge (Alignment Accurancy) meeting is poorer than center wafer.This will cause metal line 9 ends can not well cover lower floor's contact hole 5, and the tungsten plug 7 in lower floor's contact hole 5 can be come out.In the time that back segment metal carries out photoresist removal, acid solution used, for example EKC270 type solvent can react with tungsten generation primary cell in the metal throuth hole of the border of metal inflow lower floor.
In primary cell reaction, more active electrode is negative pole (anode), and more inactive electrode is anodal (negative electrode).In solvent, certain cation is negative electrode, obtains electronics, and reduction reaction occurs, and tungsten is that anode is corroded, and oxidation reaction occurs betatopic, causes the tungsten in this through hole to lose, as shown in astragal in Fig. 2.This through hole loss can make the chip circuit in semiconductor device open circuit and cause chip failure.
Therefore,, for the manufacture craft of tungsten plug and metal level, the disappearance that how to reduce tungsten has become a difficult problem.
Summary of the invention
In view of this, the object of the invention is to propose the manufacture method of tungsten plug and metal line in a kind of semiconductor device, by the change of technique, can prevent that tungsten plug in contact hole is because primary cell reacts the problem being decomposed.
A kind of tungsten plug proposing according to object of the present invention and the manufacture method of metal line, comprise step: tungsten plug manufacture craft, metal line manufacture craft and photoresist are removed technique, described tungsten plug manufacture craft is in Semiconductor substrate, to make contact hole and fill to form tungsten plug, described metal line manufacture craft covers described contact hole by metal line, the Semiconductor substrate that is positioned at contact hole below is connected by tungsten plug with this metal line that is positioned at contact hole top, it is that the photoresist remaining on metal line is removed that described photoresist is removed technique, described removal photoresist process comprises step:
Dry method is removed photoresist, and utilizes plasma to bombard photoresist;
Steam baking, discharges the above-mentioned dry method electric charge being accumulated in metal line and contact hole in process that removes photoresist;
Wet method is removed photoresist, and utilizes cleaning fluid to remove residue photoresist.
Preferably, described water vapour baking adopts the plasma reaction chamber using in dry method degumming process.
Preferably, described water vapour baking adopts 100 degrees Celsius of above water vapours, and baking time is 30 seconds to 60 seconds.
Preferably, described tungsten plug manufacture craft comprises step:
Semi-conductive substrate is provided;
In described Semiconductor substrate, deposit first medium layer and second medium layer;
In this first medium layer and second medium layer, form contact hole;
Deposits tungsten in this contact hole, forms tungsten plug.
Preferably, described first medium layer is low-k materials or super low-k materials.
Preferably, described second medium layer is the one in silica, silicon nitride or silicon oxynitride.
Preferably, described tungsten plug manufacture craft also comprises that step is after contact hole forms, and deposits one deck barrier layer at this substrate surface with contact hole graph.
Preferably, described barrier layer is the composite bed of titanium and titanium nitride.
Preferably, described metal line manufacture craft comprises step:
In the Semiconductor substrate of having made tungsten plug, deposit layer of metal layer;
Spin coating one deck photoresist on this metal level;
Described photoresist is carried out to graphical technique, make this photoresist form the required figure of metal line;
Take the figure on photoresist as mask, metal level is carried out to etching, the figure on photoresist is transferred on metal level, form metal line.
Preferably, described metal level is the one in aluminium, copper, silver or nickel.
A kind of tungsten plug that the present invention proposes and the manufacture method of metal line, by after photoresist is carried out to dry method degumming process, the baking of use steam, be accumulated in the electric charge in metal level and contact hole to discharge in dry method degumming process, when reducing wet method and remove photoresist with this, the primary cell reaction that tungsten causes under acid solution environment, thus tungsten plug in contact hole is retained.Therefore greatly improved the production yield of semiconductor device.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Figure 1A-1D is the device profile map that a kind of existing tungsten plug manufacture method makes;
Fig. 2 is the electron microscope picture of tungsten plug disappearance;
Fig. 3 the present invention makes the schematic flow sheet of tungsten plug and metal line.
Embodiment
Just as mentioned in the background art, in existing metal level and tungsten plug technique, in the time making metal level, due to the problem of craft precision, easily that metal level could not cover contact hole completely, now, in the follow-up etching technics of metal level, in the wet etching using, existence can be carried out the chemical substance that primary cell reacts with tungsten plug, easily make tungsten plug in contact hole by reaction decomposes, thereby cause the problem of tungsten disappearance in contact hole, have a strong impact on the quality of device.
Applicant is for the problems referred to above, after research, find, in the etching technics of metal level, due in the dry etching process of photoresist, can accumulate a large amount of electric charges to metal level and contact hole, and in follow-up wet etching process, introduce when acid solution, there is a large amount of cations make acid solution under the effect of above-mentioned a large amount of electric charges in.On the contact hole of now failing to cover at some metal levels, acid solution contacts with the tungsten in contact hole, cause the oxidized decomposition that the relatively active tungsten of character can be a large amount of in this acid solution environment, finally make these do not formed cavity by plated contact hole, the electrical property of product is produced to serious negative effect.
Therefore, the present invention, on the basis of above-mentioned research conclusion, has proposed a kind ofly can be reduced in the method for introducing a large amount of electric charges in metal dry etching process, makes in follow-up wet etching process, acid solution weakens the oxidability of tungsten, thereby the tungsten plug in contact hole is retained.
A kind of specific practice for above-mentioned thinking is, in metal level etching technics, after photoresist is by dry etching, add the step of a step water vapour baking, the electric charge being originally accumulated in metal level is released, and then carries out wet etching, so, just greatly reduce the oxidizability to tungsten in etching acid solution, tungsten can be retained in contact hole and not reacted.
To be described in detail the present invention by specific embodiment below.
Refer to Fig. 3, Fig. 3 is the schematic flow sheet of metal line of the present invention and tungsten plug manufacture method.As shown in the figure, method of the present invention comprises step:
S1: tungsten plug manufacture craft
This technique is in Semiconductor substrate, to make contact hole and fill to form tungsten plug, this step specifically comprises: first semi-conductive substrate is provided, and this Semiconductor substrate can be the semi-conducting materials such as monocrystalline silicon, silicon Germanium compound, silicon-on-insulator, sapphire, gallium nitride.In some techniques, this Semiconductor substrate has been through the Semiconductor substrate after multilayer epitaxial technique, in this Semiconductor substrate, has made various epitaxial loayers, such as oxide layer, dielectric layer, metal level etc.
In this Semiconductor substrate, deposit first medium layer and second medium layer, wherein first medium layer is positioned in this Semiconductor substrate, and second medium layer is positioned on this first medium layer.Described first medium layer can be interlayer dielectric layer (ILD) material conventional in semiconductor technology, in one embodiment, this first medium layer is such as being fluorine silex glass (FSG), the low-k materials such as carbon doped silicon oxide (SiOC) can be also the super low-k materials such as nanoporous silica (NPS).The material of described second medium layer can be also conventional inter-level dielectric layer material, and preferred, the material of this second medium layer is different from the material of first medium layer, such as being the materials such as silica, silicon nitride, silicon oxynitride.
Utilize contact hole mask, by photoetching and etching process, the selection section of second medium layer and first medium layer is divided and carried out etching, in this first medium layer and second medium layer, form contact hole thus, the substrate that contacts empty bottom is exposed.Wherein can in an etching, carry out the etching technics of first medium layer and second medium layer, also can carry out in two steps, first on second medium layer, etch figure by mask, then by etching, the figure on second medium layer is transferred on first medium layer.
Optionally, on this substrate surface deposition thin barrier layer of one deck with contact hole graph, this thin barrier layer is such as being the composite bed of titanium and titanium nitride, and its thickness should be far smaller than the diameter of contact hole, such as about 50nm to 100nm.After follow-up tungsten plug completes, remove on the unnecessary barrier layer that this can be exposed to contact hole outside, also can retain, depending on different applicable cases.
Then by tungsten depositing operation, on the substrate of making through barrier layer, deposit one deck tungsten, require should fill full tungsten in contact hole.This tungsten depositing operation is such as being the depositing operation that adopts SiH4 gas and WF6 gas, and the tungsten layer thickness of formation should meet fills full whole contact hole and is advisable, such as at 500nm to 1000nm.
Finally, by etching technics or grinding technics, surperficial tungsten layer is removed, only retained contact hole tungsten extremely, thereby form tungsten plug.
S2: metal line manufacture craft
This step is that contact hole is covered by metal line, and other epitaxial loayer with conducting function that makes to be positioned on Semiconductor substrate or the substrate of contact hole below is connected by tungsten plug with this metal line above being positioned at contact hole.
First in the Semiconductor substrate of having made tungsten plug, deposit layer of metal layer, this metal level can be aluminium, also can be other metal levels such as copper, silver, nickel, deposition process can be the methods such as metal organic chemical vapor deposition, plasma reinforced chemical vapour deposition, electrochemistry plating, ald.
Spin coating one deck photoresist on this metal level, this photoresist can be positive glue material, the materials such as such as phenolic resins, polymethacrylates, polybutene 1 sulfone can be also negative glue material, such as polyisoprene, α cyanoethyl acrylic acid etc.
Photoresist is carried out to graphical technique, with metal wiring pattern mask, this photoresist is exposed, the photoresist generation character of exposure area is changed, recycling developer solution cleaning photoetching glue, makes photoresist form the required figure of metal line.Take the figure on photoresist as mask, metal level is carried out to etching, the figure on photoresist is transferred on metal level, form metal line.
S3: photoresist is removed technique
This step is that the photoresist remaining on metal line is removed by after the graphical formation of above-mentioned metal level process metal line.
First be that dry method is removed photoresist, utilize plasma to bombard photoresist, this dry etch step, by physics chemical action, can be removed most surface photoresists.But cause damage for fear of the metal line below photoresist, should in the time that metal line exposes, stop dry etching.This dry method is removed photoresist used plasma by what produce under microwave, radio frequency and ozone source acting in conjunction, and its principle of removing photoresist is as follows:
CxHy (photoresist)+O2 (plasma energy) → CO (gas)+CO2 (gas)+H2O
Then by the substrate after dry etching as in roasting plant, carry out steam baking.This roasting plant can be a kind of special airtight cavity, can pass into steam more than 100 degree, moves in this roasting plant the cavity that now needs substrate to remove photoresist from dry method.This roasting plant also can use the plasma reaction chamber using in above-mentioned dry method degumming process, now only need to be after dry method have been removed photoresist, and directly pass into steam and toast.Baking time was at 30 seconds to 60 seconds.Because above-mentioned energetic plasma is in the time bombarding photoresist, can in metal level and those contact holes not covered by metal level, form a large amount of electric charges, the electric charge of these a large amount of accumulation is introduced after acid solution at follow-up wet etching, can form primary cell with tungsten and react.And after passing into steam, discharge by static, the electric charge of these accumulation is removed.Thereby reduce the oxidation reaction of tungsten in acid solution.
Finally, carrying out wet method removes photoresist.Utilize cleaning fluid to remove residue photoresist.The cleaning fluid that this wet method degumming process uses can be sulfuric acid (H
2sO
4) and the mixed liquor (SPM) of oxidant.After above-mentioned steam baking, stored charge in metal level and contact hole is released, even if the tungsten therefore exposing in this wet method is removed photoresist can immerse acid solution environment, but the cation quantity in acid solution greatly reduces, make tungsten be not easy to occur oxidation reaction, so the tungsten in contact hole is retained, and after making the photoresist removal on metal wiring layer, whole semiconductor device can normally be worked.
Dry method in above-mentioned tungsten plug manufacture craft, metal line manufacture craft and photoresist removal technique is removed photoresist and wet method is removed photoresist, all a kind of in various common process, should be noted that, according to the difference of concrete device, likely a certain step in above-mentioned various technique is replaced, such as in some device, need to fill in row high temperature oxidation process to tungsten, or replace with single insulating barrier for the first medium layer and the second medium layer that form contact hole.In some device, need multiple layer metal layer for another example, and utilize tungsten plug to be electrically connected, now above-mentioned method can be expanded in the manufacture craft of multiple layer metal and multiple connectors.
In sum.The present invention proposes the manufacture method of a kind of tungsten plug and metal line, this manufacture method is by after carrying out dry method degumming process to photoresist, the baking of use steam, be accumulated in the electric charge in metal level and contact hole to discharge in dry method degumming process, when reducing wet method and remove photoresist with this, the primary cell reaction that tungsten causes under acid solution environment, thus tungsten plug in contact hole is retained.Therefore greatly improved the production yield of semiconductor device.
To the above-mentioned explanation of the disclosed embodiments, make professional and technical personnel in the field can realize or use the present invention.To be apparent for those skilled in the art to the multiple modification of these embodiment, General Principle as defined herein can, in the situation that not departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention will can not be restricted to these embodiment shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (10)
1. the manufacture method of a tungsten plug and metal line, comprise step: tungsten plug manufacture craft, metal line manufacture craft and photoresist are removed technique, described tungsten plug manufacture craft is in Semiconductor substrate, to make contact hole and fill to form tungsten plug, described metal line manufacture craft covers described contact hole by metal line, the Semiconductor substrate that is positioned at contact hole below is connected by tungsten plug with this metal line that is positioned at contact hole top, it is that the photoresist remaining on metal line is removed that described photoresist is removed technique, it is characterized in that: described removal photoresist process comprises step:
Dry method is removed photoresist, and utilizes plasma to bombard photoresist;
Steam baking, discharges the above-mentioned dry method electric charge being accumulated in metal line and contact hole in process that removes photoresist;
Wet method is removed photoresist, and utilizes cleaning fluid to remove residue photoresist.
2. the manufacture method of tungsten plug as claimed in claim 1 and metal line, is characterized in that: described water vapour baking adopts the plasma reaction chamber using in dry method degumming process.
3. the manufacture method of tungsten plug as claimed in claim 1 and metal line, is characterized in that: described water vapour baking adopts 100 degrees Celsius of above water vapours, and baking time is 30 seconds to 60 seconds.
4. the manufacture method of tungsten plug as claimed in claim 1 and metal line, is characterized in that: described tungsten plug manufacture craft comprises step:
Semi-conductive substrate is provided;
In described Semiconductor substrate, deposit first medium layer and second medium layer;
In this first medium layer and second medium layer, form contact hole;
Deposits tungsten in this contact hole, forms tungsten plug.
5. the manufacture method of tungsten plug as claimed in claim 4 and metal line, is characterized in that: described first medium layer is low-k materials or super low-k materials.
6. the manufacture method of tungsten plug as claimed in claim 4 and metal line, is characterized in that: described second medium layer is the one in silica, silicon nitride or silicon oxynitride.
7. the manufacture method of tungsten plug as claimed in claim 4 and metal line, is characterized in that: described tungsten plug manufacture craft also comprises that step is after contact hole forms, and deposits one deck barrier layer at this substrate surface with contact hole graph.
8. the manufacture method of tungsten plug as claimed in claim 7 and metal line, is characterized in that: described barrier layer is the composite bed of titanium and titanium nitride.
9. the manufacture method of tungsten plug as claimed in claim 1 and metal line, is characterized in that: described metal line manufacture craft comprises step:
In the Semiconductor substrate of having made tungsten plug, deposit layer of metal layer;
Spin coating one deck photoresist on this metal level;
Described photoresist is carried out to graphical technique, make this photoresist form the required figure of metal line;
Take the figure on photoresist as mask, metal level is carried out to etching, the figure on photoresist is transferred on metal level, form metal line.
10. the manufacture method of tungsten plug as claimed in claim 9 and metal line, is characterized in that: described metal level is the one in aluminium, copper, silver or nickel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210454044.2A CN103811412A (en) | 2012-11-13 | 2012-11-13 | Tungsten plug and metal wire manufacturing method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210454044.2A CN103811412A (en) | 2012-11-13 | 2012-11-13 | Tungsten plug and metal wire manufacturing method |
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| CN103811412A true CN103811412A (en) | 2014-05-21 |
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| CN201210454044.2A Pending CN103811412A (en) | 2012-11-13 | 2012-11-13 | Tungsten plug and metal wire manufacturing method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115985846A (en) * | 2023-02-10 | 2023-04-18 | 合肥晶合集成电路股份有限公司 | Manufacturing method of semiconductor structure and semiconductor structure |
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|---|---|---|---|---|
| US5834369A (en) * | 1995-02-02 | 1998-11-10 | Matsushita Electric Industrial Co., Ltd. | Method of preventing diffusion between interconnect and plug |
| TW484205B (en) * | 1998-10-12 | 2002-04-21 | Promos Technologies Inc | Manufacturing method of interconnect to prevent the plug erosion |
| CN1941279A (en) * | 2005-05-27 | 2007-04-04 | 台湾积体电路制造股份有限公司 | H20 plasma and h20 vapor methods for releasing charges and use thereof |
-
2012
- 2012-11-13 CN CN201210454044.2A patent/CN103811412A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5834369A (en) * | 1995-02-02 | 1998-11-10 | Matsushita Electric Industrial Co., Ltd. | Method of preventing diffusion between interconnect and plug |
| TW484205B (en) * | 1998-10-12 | 2002-04-21 | Promos Technologies Inc | Manufacturing method of interconnect to prevent the plug erosion |
| CN1941279A (en) * | 2005-05-27 | 2007-04-04 | 台湾积体电路制造股份有限公司 | H20 plasma and h20 vapor methods for releasing charges and use thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115985846A (en) * | 2023-02-10 | 2023-04-18 | 合肥晶合集成电路股份有限公司 | Manufacturing method of semiconductor structure and semiconductor structure |
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