CN103854668A - 磁性存储系统读磁头的磁阻传感器及其制造方法 - Google Patents
磁性存储系统读磁头的磁阻传感器及其制造方法 Download PDFInfo
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Abstract
本发明公开一种包括磁阻传感器的磁性读取换能器及其制造方法。该磁阻传感器包括覆盖自由层的盖帽层。盖帽层被设置成具有第一厚度以从自由层吸收硼。对磁阻传感器进行退火，并且硼从自由层中扩散并被盖帽层吸收，由此提高自由层的磁性能。然后，将盖帽层厚度减小到第二厚度，从而减小磁阻传感器的屏蔽到屏蔽（SS）堆栈间隔并允许增大磁录记录密度。
Description
技术领域
本发明总体涉及磁性记录系统的领域。更具体地，本发明的实施例涉及提高磁性存储系统读磁头的磁阻传感器自由层的磁性能。
背景技术
在静止和可移动计算环境中，磁性存储系统如硬盘驱动器被应用于各种各样的设备中。包含磁性存储系统的设备的示例包括：台式计算机、便携式笔记本计算机、便携式硬盘驱动器、数字多功能光盘（DVD）播放器、高清电视接收器、车辆控制系统、蜂窝电话或移动电话、电视机顶盒、数码相机、数码摄像机、视频游戏机以及便携式媒体播放器。
典型的硬盘驱动器包括一个或更多扁平磁盘的磁性存储介质。这样的磁盘通常由两种主要物质形成，即为该磁盘产生结构和刚性的基体材料以及保存代表数据的磁脉冲或磁矩的磁性介质涂层。硬盘驱动器一般也包括读磁头和写磁头，通常是能够感测和/或改变存储在磁盘上的磁场的磁性换能器。垂直磁记录（PMR）包含记录的比特，所记录的比特在大致垂直方向或离面方向上被存储在大致平面的记录层中。PMR读磁头和PMR写磁头通常作为集成的读/写磁头被形成在空气轴承滑块上。在PMR读取器中，在读磁头中经常采用隧穿磁阻（TMR）传感器。
硬盘驱动器性能要求和设计需求已经加强。对更小尺寸中的更大容量的当前需求与对不断增长的存储磁道密度的需求联系起来。随着磁性存储介质上的数据密度的增加，磁场的强度通常降低，以便使干扰最小化。磁性存储介质中的更高磁录密度需要先进的读/写换能器设计。
附图说明
当与附图结合时，通过参考下列详细描述，本发明的上述方面和许多随之产生的优势将变得更容易理解，其中：
图1是本发明的实施例在其中有用的磁盘驱动器数据存储系统的俯视图；
图2是在本发明的实施例中可以在图1的磁盘驱动器数据存储系统中使用的磁性记录读取换能器的一部分的剖视图；
图3是在本发明的实施例中描述可以在图1的磁盘驱动器数据存储系统中使用的为磁性读取换能器的磁阻传感器提供自由层和盖帽层的过程的剖视图表示；
图4是在本发明的实施例中描述为磁性读取换能器的磁阻传感器提供自由层和盖帽层的过程的流程图；
图5是在本发明的实施例中描述钛盖帽层厚度对磁阻传感器自由层的磁矩、阻尼常数和磁致伸缩产生的影响的实验数据的典型图表；以及
图6是在本发明的实施例中描述钛盖帽层厚度对磁阻传感器自由层的磁矩产生的影响的实验数据的典型图表。
具体实施方式
示例性实施例是参考具体配置描述的。本领域的普通技术人员将理解，可以进行各种改变和修改，然而其仍然在所附权利要求的范围内。此外，可以不详细阐述众所周知的元件、设备、组件、方法、过程步骤等，以免影响对本发明的理解。
随着对磁性记录硬盘的增加的磁录密度的需求加强，读取换能器和写入换能器的设计需求也加强。为提供高磁录密度，读取换能器的间隙宽度（被称为屏蔽到屏蔽距离（SS））可以减小。增大读取换能器的信噪比（SNR）也使得能够增大磁录记录密度。增大的SNR可以由读取换能器自由层以增大的磁矩、减小的阻尼常数和优化的磁致伸缩来提供。
本文描述了用于提高磁性存储系统读磁头的磁阻传感器自由层的磁性能的装置、系统和方法。本文也描述了降低屏蔽到屏蔽（SS）传感器堆栈间隔且同时保持自由层的改进的磁性能的方法。明显的是，本说明书和权利要求书内所公开的磁阻传感器和方法可以与磁盘驱动器存储系统以及使用读设备和/或写设备的其它存储系统一起使用。
参考附图，其中相同的参考数字表示各个图中的相同元素，图1描述了本发明的实施例在其中有用的磁盘驱动器存储系统10。说明书和权利要求书中的特征不限于该特定的设计，其仅被示出用于示例的目的。磁盘驱动器10包括底盘12，底盘12可以被布置在顶盖上，形成密封环境以保护内部组件不受污染。
磁盘驱动器10还包括计算机可读数据存储介质的一个或更多数据存储磁盘14。通常，每个数据存储磁盘14的两个主表面都包括用于数据存储目的的多个同心设置的磁道。每个数据存储磁盘14都被安装在轮毂或主轴16上，该轮毂或主轴16进而与底盘12和/或顶盖可旋转地互连。多个数据存储磁盘14通常以垂直隔开且平行的关系安装在主轴16上。主轴马达18以合适的速度旋转数据存储磁盘14。
磁盘驱动器10也包括围绕枢轴轴承22旋转的致动器臂组件24，该枢轴轴承22进而由底盘12和/或顶盖可旋转地支撑。致动器臂组件24包括从枢轴轴承22附近延伸出的一个或更多独立刚性的致动器臂26。多个致动器臂26通常以垂直隔开的关系布置，其中一个致动器臂26被提供用于磁盘驱动器10的每个数据存储磁盘14的每个主数据存储表面。也可以使用其它类型的致动器臂组件配置，例如具有一个或更多刚性致动器臂尖端的组件或类似的从普通结构伸出悬臂的组件。致动器臂组件24的移动由致动器臂驱动组件（例如音圈马达20等）来提供。音圈马达20是在控制电子器件40的指导下控制致动器臂组件24的操作的磁性组件。
悬架28被附连到每个致动器臂26的自由端并且从此处伸出悬臂。滑块30被设置在每个悬架28的自由端处或附近。通常被称为读/写磁头（例如换能器）的装置作为磁头单元32被安装在滑块30之下并用于磁盘驱动器读/写操作中。随着悬架28移动，滑块30沿弧形路径34移动并横穿相应的数据存储磁盘14以将磁头单元32定位在数据存储磁盘14上的选定位置处，从而进行磁盘驱动器读/写操作。当磁盘驱动器10没有操作时，可以利用斜坡（ramp）组件42将致动器臂组件24旋转到驻留位置。磁头单元32经由沿致动器臂26确定路线的磁头线连接到前置放大器36，前置放大器36用通常安装在致动器臂组件24上的柔性排线38与磁盘驱动器10的控制电子器件40互连。信号在磁头单元32和其相应的数据存储磁盘14之间交换，以便进行磁盘驱动器读/写操作。磁头单元32的一部分在图2中示出。磁头单元32可以利用各种类型的读取传感器技术，例如各向异性磁阻（AMR）、巨磁阻（GMR）、隧穿磁阻（TMR）、其它磁阻技术或其它合适的技术。
图2是在本发明的实施例中可以与图1的磁盘驱动器数据存储系统中的磁性记录技术应用程序一起使用的磁性记录读取换能器的一部分的气垫表面（ABS）视图。图示的读取换能器100包括隧穿磁阻（TMR）传感器101。读取换能器100可以是读磁头的一部分，或者可替换地，其可以是也包括写换能器的混合磁头的一部分。磁阻传感器发明的实施例也可以与各向异性磁阻（AMR）传感器、巨磁阻（GMR）传感器一起使用，或者可以与其它磁阻技术或合适的技术一起使用。
TMR传感器100包括具有被绝缘势垒层（例如MgO）分隔开的两个铁磁层的图案化TMR结构或堆叠（stack）101。一个铁磁层被磁性定向到固定的方向（“钉扎层”PL146），而另一铁磁层响应于外部磁场而旋转（“自由层”FL150）。TMR堆叠101的功能层可以包括多个层。例如，钉扎层（pinned layer）146可以是PL1/PL2，其中PL1是CoFe（钴铁），而PL2是CoB（钴硼）。
TMR传感器100一般也包括布置在TMR堆叠101的任意一侧上的硬偏置层152，其沿垂直于TMR堆叠的各层的方向提供偏置场。除硬偏置层之外，本发明也可以采用其它技术。设备的电阻取决于两个铁磁层146和150之间的相对取向。在TMR读磁头中，感测电流垂直穿过TMR堆叠101的各层。相邻的相反方向的磁化区之间的磁性转变引起电阻的变化，该变化由TMR传感器100检测到。自由层150具有对外部磁场敏感的磁化。屏蔽层140和162可以阻止一些磁通量到达自由层的侧面，以免影响自由层准确读取数据的能力。硬偏置层152或包括软偏置结构的替换结构被设置成在图2所示的磁道宽度方向上磁性偏置自由层150。TMR堆叠101也包括屏蔽层140和162（分别为S1和S2）、籽晶层142（SL）、反铁磁层144（AFM）、势垒层148（例如MgO）以及盖帽层160（Cap）。
在所示的示例中，盖帽层160覆盖自由层150。盖帽层160包括钛、铪、锆、铌、钽和钌中的一种。在示例实施例中，盖帽层160包括硼化钛并且是非晶体的，从而其对自由层150产生影响以增加磁矩、减小阻尼常数并优化自由层150的磁致伸缩。可以将非晶体盖帽层160设置为至少充分抑制自由层150在除了具有100平面的体心立方晶体结构（bcc（100））以外的方向上结晶。在示例实施例中，盖帽层160的厚度小于20埃（A）。在本发明的实施例中，自由层150包括i)CoFe和ii)CoB、CoB和Fe以及Co1-xFexBy中的至少一个，其中x为0到0.4或x为0到0.9，y为0.1到0.25。
现在参考图3，其描述可以在图1的磁盘驱动器数据存储系统中使用的为磁性读取换能器的磁阻传感器提供自由层和盖帽层的方法或过程。该方法对磁阻传感器采用退火步骤。在对磁阻传感器退火之前，磁阻传感器按照覆盖顺序包括：CoFe和CoB自由层164、钛盖帽层166、钌层167和钽层168。可替换地，盖帽层166可以包括铪、锆、铌、钽或钌。盖帽层166可以用作保护层，并且在一个示例中用作硼吸收层。同样可替换地，自由层164包括i)CoFe和ii)CoB、CoB和Fe以及Co1-xFexBy中的至少一个，其中x为0到0.4或x为0到0.9，y为0.1到0.25。盖帽层166被设置成具有第一厚度以便将硼从自由层164吸收到盖帽层166。在图示的示例中，钛盖帽层厚度为40A。可替换地，盖帽层166的第一厚度（退火之前）在40埃到200埃的范围内。在另一替换示例中，盖帽层166的第一厚度（退火之前）在5埃到200埃的范围内。在示例实施例中，更厚的盖帽层从包含CoB的自由层164中吸收更多的硼。具有低形成能量（formation energy）的钛盖帽层166从自由层164中吸收硼。在一个实施例中，盖帽层166的期望厚度与包括用于自由层和盖帽层的材料、传感器器件和应力水平的因素相关联，以获得期望的磁致伸缩。接下来，将钌层167设置成覆盖盖帽层166，并将钽层168设置成覆盖钌层167。在图示的实施例中，钽层厚度为10A，钌层厚度为30A。
对磁阻传感器进行退火，则盖帽层166从自由层164吸收硼，并且盖帽层166形成硼化钛。随着盖帽层166形成硼化钛，盖帽层166变成是非晶体的。非晶体盖帽层至少充分抑制自由层150在除了具有100平面的体心立方晶体结构（bcc(100)）以外的方向上结晶。钛盖帽层也吸引氧气，因此减少其它磁阻传感器层的氧化。并且，当将硼从自由层164中吸出时，自由层164在退火之后表现出更高的磁矩、更低的阻尼常数和优化的磁致伸缩。当自由层164表现出这些特性时，信噪比（SNR）也增加了。这些自由层和磁阻传感器特性是高密度记录所期望的。
在对磁阻传感器进行退火之后，盖帽层166被减小到第二厚度。在图示的示例中，盖帽层厚度被减小到20A。减小盖帽层的厚度缩短了屏蔽到屏蔽（SS）距离，这对高密度记录是有用的。可替换地，盖帽层166被减小到小于20埃并且小于第一厚度的一半。作为另一替换示例，盖帽层166可以被减小到5埃至50埃。可以通过用包括离子束研磨、等离子蚀刻和化学湿法蚀刻的方法蚀刻盖帽层166来减小盖帽层166的厚度。如图所示，一部分盖帽层166厚度被蚀刻到期望厚度，并且蚀刻掉钽层和钌层。
在减小盖帽层166的厚度之后，可以设置或沉积覆盖盖帽层166的层。在图示的实施例中，覆盖盖帽层166的层包括覆盖盖帽层166的镍铁层170和覆盖镍铁层170以防止镍铁层氧化的钌层172或钽层。在图示的示例中，镍铁层厚度为80A，钌层厚度为20A。
现在转到图4，其为描述向磁性读取换能器的磁阻传感器提供自由层和盖帽层的示例过程的流程图。在该示例过程中，磁头单元例如图1中的磁头单元32采用隧穿磁阻（TMR）读取传感器。如步骤180所示，生长TMR薄膜，并且邻近包含CoB的自由层沉积一个厚钛盖帽层。也可以沉积覆盖钛盖帽层的层。如步骤184所示，对磁阻传感器执行退火步骤。如步骤184进一步所示，在退火期间，硼从自由层中扩散并被厚钛盖帽层吸收，该盖帽层形成硼化钛。在退火之后，自由层可以表现出更好的自由层性能，包括更高的磁矩、更低的阻尼常数和优化的磁致伸缩。接下来，如步骤186所示，覆盖钛盖帽层的层被蚀刻掉，并且厚钛盖帽层被蚀刻并减小到期望的厚度。然后，如步骤188所示，沉积覆盖盖帽层的屏蔽层和钌层。
自由层的改进的特性和性能即使在减小的钛盖帽层厚度下也可以保持（如图6所示），因为在减小钛盖帽层厚度之前已经完成了从自由层到形成硼化钛的盖帽层的硼扩散。
图5是在本发明的实施例中描述钛盖帽层厚度对磁阻传感器自由层的磁矩、阻尼常数和磁致伸缩产生的影响的实验数据的典型图表。使用映射分析，实验数据显示出：在退火之后，更厚的覆盖钛盖帽层对包含CoB的自由层产生影响，使得自由层表现出增大的磁矩（Bs）、降低的阻尼常数（α或Alpha）以及增大的负磁致伸缩（MS）。映射分析表明更厚的钛盖帽层从CoB自由层吸收更多的硼。映射分析也显示出，与没有覆盖钛盖帽层的自由层（0.008）相比，覆盖自由层的40A的钛盖帽层导致自由层具有一半的阻尼常数（0.004）。
图6是在本发明的实施例中描述钛盖帽层厚度对磁阻传感器自由层的磁矩产生的影响的实验数据的典型图表。在对磁阻传感器进行退火之后，钛盖帽层被蚀刻以减小其厚度。该实验数据显示出：在蚀刻并减少钛盖帽层之后，对高于大约10A的各种钛盖帽层厚度来说，磁阻传感器自由层的磁矩没有明显变化。因此，即使当减小钛盖帽层厚度来缩短磁性读取传感器的屏蔽到屏蔽距离（SS）以便提供更高的磁录密度时，自由层的改进的磁性特性和性能也被保持。
可以对所公开的实施例进行各种修改和变化，然而其仍在本发明的精神和范围内。以上所描述的方式和其它实施方式都在随附权利要求的范围内。
Claims (20)
1.一种用于提供包括磁阻传感器的磁性读取换能器的方法，其中所述磁阻传感器包括覆盖自由层的盖帽层，所述方法包括：
将所述盖帽层设置成具有第一厚度，从而将硼从所述自由层吸收到所述盖帽层；
对所述磁阻传感器进行退火；
在对所述磁阻传感器进行退火期间，从所述自由层中扩散硼并由所述盖帽层吸收硼；以及
在对所述磁阻传感器进行退火之后，将所述盖帽层厚度减小到第二厚度。
2.根据权利要求1所述的方法，其中所述盖帽层包括钛、铪、锆、铌、钽和钌中的一种。
3.根据权利要求1所述的方法，其中在退火期间所述盖帽层形成硼化钛。
4.根据权利要求1所述的方法，其中在对所述磁阻传感器进行退火之前，所述自由层包括i)CoFe和ii)CoB、CoB和Fe以及Co1-xFexBy中的至少一种，其中x为0到0.4和0到0.9中的一个，并且y为0.1到0.25。
5.根据权利要求1所述的方法，其中所述第一厚度在40埃到200埃的范围内，并且所述第二厚度在20埃的范围内。
6.根据权利要求1所述的方法，其中将所述盖帽层厚度减小到所述第二厚度包括将所述盖帽层厚度减小到小于20埃并小于所述第一厚度的一半。
7.根据权利要求1所述的方法，其进一步包括在对所述磁阻传感器进行退火之前，用钌层覆盖所述盖帽层，并且用钽层覆盖所述钌层。
8.根据权利要求1所述的方法，其进一步包括在将所述盖帽层厚度减小到所述第二厚度之后，用层覆盖所述盖帽层。
9.根据权利要求8所述的方法，其中覆盖所述盖帽层的所述层包括覆盖所述盖帽层的镍铁层和覆盖所述镍铁层的钌层或钽层。
10.根据权利要求1所述的方法，其中减小所述盖帽层厚度包括通过离子束研磨、等离子蚀刻和化学湿法蚀刻中的一种来蚀刻所述盖帽层。
11.一种用于提供包括磁阻传感器的磁性读取换能器的方法，其中所述磁阻传感器包括覆盖自由层的盖帽层，所述方法包括：
形成非晶体盖帽层；以及
将所述非晶体盖帽层设置为至少充分抑制所述自由层在除具有100平面的体心立方晶体结构（bcc（100））以外的方向上结晶。
12.根据权利要求11述的方法，其中所述盖帽层包括钛、铪、锆、铌、钽和钌中的一种。
13.根据权利要求11所述的方法，其中所述盖帽层包括硼化钛。
14.根据权利要求11所述的方法，其中所述自由层包括i)CoFe和ii)CoB、CoB和Fe以及Co1-xFexBy中的至少一种，其中x为0到0.4和0到0.9中的一个，并且y为0.1到0.25。
15.一种包括磁阻传感器的磁性读取换能器，所述磁阻传感器包括覆盖自由层的盖帽层，其中所述盖帽层是非晶体的并且被设置为至少充分抑制所述自由层在除了具有100平面的体心立方晶体结构（bcc（100））以外的方向上结晶。
16.根据权利要求15所述的磁性读取换能器，其中所述盖帽层包括钛、铪、锆、铌、钽和钌中的一种。
17.根据权利要求15所述的磁性读取换能器，其中所述盖帽层包括硼化钛。
18.根据权利要求15所述的磁性读取换能器，其中所述盖帽层厚度小于20埃。
19.根据权利要求15所述的磁性读取换能器，其中所述自由层包括i)CoFe和ii)CoB、CoB和Fe以及Co1-xFexBy中的至少一种，其中x为0到0.4和0到0.9中的一个，并且y为0.1到0.25。
20.根据权利要求15所述的磁性读取换能器，其中所述磁阻传感器是隧穿磁阻TMR传感器或巨磁阻GMR传感器。
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| US8780505B1 (en) | 2013-03-12 | 2014-07-15 | Western Digital (Fremont), Llc | Method and system for providing a read transducer having an improved composite magnetic shield |
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2012
- 2012-11-30 US US13/691,695 patent/US9053719B2/en not_active Expired - Fee Related
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2013
- 2013-11-29 CN CN201310629032.3A patent/CN103854668B/zh active Active
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Also Published As
| Publication number | Publication date |
|---|---|
| US9396742B1 (en) | 2016-07-19 |
| US20140154529A1 (en) | 2014-06-05 |
| CN103854668B (zh) | 2018-04-27 |
| US9053719B2 (en) | 2015-06-09 |
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