CN103890895A - Scanning electron microscope equipped with back scattered electron detection function - Google Patents
Scanning electron microscope equipped with back scattered electron detection function Download PDFInfo
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- CN103890895A CN103890895A CN201180073721.XA CN201180073721A CN103890895A CN 103890895 A CN103890895 A CN 103890895A CN 201180073721 A CN201180073721 A CN 201180073721A CN 103890895 A CN103890895 A CN 103890895A
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- test section
- reflection electronic
- electron
- wien
- scanning electron
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24475—Scattered electron detectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2448—Secondary particle detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24485—Energy spectrometers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24495—Signal processing, e.g. mixing of two or more signals
Abstract
The present invention relates to a scanning electron microscope equipped with a back scattered electron detection function, which causes primary electrons generated from a light source to enter a specimen, and after the primary electrons have entered therein, detects emitted electrons which are emitted from the specimen. The scanning electron microscope equipped with a back scattered electron detection function is characterised by comprising: a Wien filter unit, which is arranged between the light source and the specimen, and which separates the emitted electrons into secondary electrons and back scattered electrons by generating a magnetic field and an electric field; and a detecting unit which detects the secondary electrons and back scattered electrons separated by the Wien filter unit. Thus, provided is a scanning electron microscope equipped with a back scattered electron detection function which enables the separation and detection of secondary electrons and back-scattered electrons due to the use of a Wien filter.
Description
Technical field
The present invention relates to a kind of scanning electron microscopy that possesses reflection electronic measuring ability, relate in more detail and a kind ofly can easily separate secondary electron and the reflection electronic from sample emissions by Wien speed filter house, and survey respectively the scanning electron microscopy that possesses reflection electronic measuring ability of this secondary electron and reflection electronic.
Background technology
Recently along with the minimization trend of information equipment and also need the industrialization of superfine technology in tip materials field, in the urgent need to the information to fine structure or material surface shape.Especially, for the latter half of mushroom development research in nanotechnology in the world, carried out structure in order to find out nano-substance and the various researchs of characteristic since nineteen ninety, electron microscope is responsible for an important ring thereupon.
Recently, utilize the small electric wire of 1～100nm left and right to carry out the scanning of x-y two-dimensional directional to the specimen surface of placing in a vacuum, thereby detect the signal of the secondary electron producing on specimen surface, and show enlarged image or carry out record on leonard's tube and screen, and the device of analytical sample shape and fine structure etc.
Fig. 1 is the figure that represents an example of scanning electron microscopy in the past.
With reference to Fig. 1, scanning electron microscopy 10 is in the past included in the light source 11 of vacuum chamber interscan primary electron pe, from the object lens of the secondary electron se of sample emissions with for detection of the detector 12 of the secondary electron se of the surface emitting from sample s and form.
But, according to primary electron pe with to the interaction of the penetrating depth of sample S, the electronics of transmitting various ways, although by detect from the electronics of the various ways of sample emissions come can test samples multifrequency nature, but in the case of using scanning electron microscopy 10 in the past, exist to only have secondary electron se is used as detected object, cannot detect from the shortcoming of other electronics of sample emissions.
Summary of the invention
Therefore, the present invention proposes in order to solve this problem in the past, its objective is a kind of scanning electron microscopy that possesses reflection electronic measuring ability is provided, this scanning electron microscopy is by being used Wien velocity filter can separate secondary electron and reflection electronic and survey.
Above-mentioned purpose realizes by the scanning electron microscopy that possesses reflection electronic measuring ability of the present invention, the primary electron producing from light source (Primary Electron) is injected sample by the scanning electron microscopy that possesses reflection electronic measuring ability of the present invention, and detect the electron emission from sample emissions after described primary electron is injected, it is characterized in that, comprise: Wien speed filter house, be configured between described light source and described sample, for generation of magnetic field and electric field, and described electron emission is separated into secondary electron (Secondary Electron) and reflection electronic (Back Scattered Electron), with detection portion, survey respectively from described Wien speed filtration fraction from secondary electron and reflection electronic.
In addition, described detection portion can comprise the upside that is configured in described Wien speed filter house, for surveying the first test section of described secondary electron; And be configured between described the first test section and described light source, for surveying the second test section of described reflection electronic.
The end face of the side that the end face of a side that in addition, the described secondary electron of described the first test section is injected or the described reflection electronic of described the second test section are injected can be formed as skewed.
The end of the side that the end of the side that in addition, the secondary electron of described the first test section is injected and the angle that ground forms can be injected than the reflection electronic of described the second test section and the angle that ground forms are large.
In addition, described detection portion can further comprise electronic guide parts, the end of described electronic guide parts and described the first test section or described the second test section separates predetermined distance and configures, for described secondary electron is guided to described the first test section side, or described reflection electronic is guided to described the second test section side.
In addition, described detection portion can further comprise anti-guide member, and described anti-guide member is configured on the mobile route of described reflection electronic, for preventing that described reflection electronic is directed to described the first test section side under the effect of described electronic guide parts.
In addition, can further comprise lens barrel, described lens barrel is used for accommodating described light source, described Wien speed filter house and described detection portion, and the end side that the primary electron from described light source scanning of described lens barrel penetrates can be isolated into vacuum state.
According to the present invention, provide a kind of and can easily separate secondary electron and the reflection electronic from sample emissions by Wien speed filter house, and survey respectively the scanning electron microscopy that possesses reflection electronic measuring ability of secondary electron and reflection electronic.
In addition, without increasing extraly structure, and use Wien speed filter house can easily separate secondary electron and reflection electronic.
In addition, by detect secondary electron and reflection electronic simultaneously, thereby can understand surface characteristic and the bulk properties of sample simultaneously.
In addition, by the detection portion that surveys secondary electron and reflection electronic is arranged in lens barrel, thereby can form on the whole compact structure.
In addition, form by the electronics of detection portion being injected to end slope, so that electronics vertically injects, thereby can improve the rate of injecting of electronics and the accuracy of detection of sample character.
Accompanying drawing explanation
Fig. 1 is the figure that represents an example of scanning electron microscopy in the past;
Fig. 2 is the schematic cross sectional views of the scanning electron microscopy that possesses reflection electronic measuring ability of the first embodiment of the present invention;
Fig. 3 is illustrated in the figure moving by the primary electron of Wien speed filter house in the scanning electron microscopy that possesses reflection electronic measuring ability of Fig. 2;
Fig. 4 is the figure being illustrated in the scanning electron microscopy that possesses reflection electronic measuring ability of Fig. 2 from the motion track of the electron emission of sample emissions;
Fig. 5 is illustrated in the figure moving by the electron emission of Wien speed filter house in the scanning electron microscopy that possesses reflection electronic measuring ability of Fig. 2;
Fig. 6 is the schematic cross sectional views of the scanning electron microscopy that possesses reflection electronic measuring ability of the second embodiment of the present invention.
Embodiment
Before explanation of the present invention, it should be noted that carrying out, in multiple embodiment, use identical Reference numeral and in the first embodiment, carry out representational explanation thering is the structural element of same structure, and in other embodiments the structure different from the first embodiment described.
Below, with reference to accompanying drawing, the scanning electron microscopy that possesses reflection electronic measuring ability of the first embodiment of the present invention is described in detail.
Fig. 2 is the schematic cross sectional views of the scanning electron microscopy that possesses reflection electronic measuring ability of the first embodiment of the present invention.
With reference to Fig. 2, the scanning electron microscopy that possesses reflection electronic measuring ability 100 of the first embodiment of the present invention comprises lens barrel 110, light source 120, condenser lens 130, aperture 140, detection portion 150, Wien speed filter house 160, object lens 170 and sample mount 180.
Described lens barrel 110 is for light source 120 described later, condenser lens 130, aperture 140, detection portion 150, Wien speed filter house 160 and object lens 170 being housed in to inner outer wrapper, the side end penetrating for primary electron (Primary Electron:pe), the end of sample mount 180 sides that configure for sample S keeps vacuum state.
Described light source 120 scans the parts of the sample mount that sample S is installed 180 sides of below for the primary electron pe producing when by negative electrode in heating lens barrel 110.
Described condenser lens 130 is the parts for the primary electron pe focusing of launching from above-mentioned light source 120 being converged to a bit.
Described aperture 140 is for for making the primary electron pe converging by condenser lens 130 become the parts of the form of certain wavelength.
Described detection portion 150, for for detection of the parts from the electron emission ee that contains secondary electron (Secondary Electron) se and reflection electronic (Back Scattered Electron) bse of sample S transmitting after injecting at primary electron pe, comprises the first test section 151 and the second test section 152.
Described the first test section 151, for only surveying from the secondary electron se of the electron emission ee of sample S transmitting, is configured between light source 120 and Wien speed filter house 160 described later.Because secondary electron se is electronics from the process of side shifting to side that be upwards partial to and inject the first test section 151 from sample S, therefore the end face of the first test section 151 is formed as skewedly, and secondary electron can vertically be injected.
Described the second test section 152, for only detecting from the reflection electronic be of the electron emission ee of sample S transmitting, is configured between light source 120 and the first test section 151, is configured in the upside of the first test section 151.On the other hand, the end face of the second test section 152 also can similarly be formed as skewed with above-mentioned the first test section 151, because the deflection degree of reflection electronic be is less than secondary electron se, therefore the angle of inclination of the end face of the second test section is also preferably formed the angle of inclination of the end face for being less than the first test section 151.
In other words, the secondary electron se of the first test section 151 injects the angle θ 1 that face and ground forms and is preferably formed as inject face than the reflection electronic be of the second test section 152 large with the angle θ 2 of ground formation.
Described Wien speed filter house 160, for being configured between the first test section 151 and sample mount 180, is configured in the parts of the downside of the first test section 151, is partial to detection portion 150 sides for the mobile route that makes the electron emission ee launching from sample S.Meanwhile, Wien speed filter house 160 utilization is included between secondary electron se from the electron emission ee of sample S transmitting and the translational speed of reflection electronic be variant, carries out the effect of physical separation secondary electron se and reflection electronic be.
That is, Wien speed filter house 160 produces at the face vertical with the moving direction of the electron emission ee launching from sample S the Electric and magnetic fields being perpendicular to one another, thereby makes the motion track deflection of secondary electron se and reflection electronic be.
Described object lens 170 focus on the parts of the effect on sample S surface for playing the focus of the primary electron pe that produces and move down at light source 120.
Described sample mount 180 is for being configured in lens barrel below, for supporting the parts of sample S.On the other hand, sample mount 180 can move along three direction of principal axis, can be controlled for to be easy to observe sample S by rotate and inclination etc.
The following describes the work of the first embodiment of the above-mentioned scanning electron microscopy 100 that possesses reflection electronic measuring ability.
Fig. 3 is the figure that is illustrated in the scanning electron microscopy that possesses reflection electronic measuring ability of Fig. 2 the action of the primary electron by Wien speed filter house, Fig. 4 is the figure being illustrated in the scanning electron microscopy that possesses reflection electronic measuring ability of Fig. 2 from the motion track of the electron emission of sample emissions, and Fig. 5 is the figure that is illustrated in the scanning electron microscopy that possesses reflection electronic measuring ability of Fig. 2 the action of the electron emission by Wien speed filter house.
First with reference to Fig. 2, the primary electron pe that the light source 120 in lens barrel 110 produces is subject to high-tension applying and is accelerated, thereby is scanned the sample mount that sample S is installed 180 sides of below.But the reflector (not shown) that uses at this moment, the regulation of lens barrel 110 inside is controlled the scanning direction of primary electron pe.
The primary electron pe scanning from light source 120 arrives Wien speed filter house 160 after condenser lens 130 and aperture 140.Now, Wien speed filter house 160 on the face of regulation parallel to the ground along producing Electric and magnetic fields with the direction that is perpendicular to one another.
(a) of Fig. 3 is applied to the power of primary electron for the electric field by producing at Wien speed filter house 160 is described, with reference to Fig. 3 (a), the primary electron pe that moves down through Wien speed filter house 160 time due to the axial power of be subject to+x of electric field 20 producing at Wien speed filter house 160.
Meanwhile, (b) of Fig. 3 is applied to the power of primary electron for the magnetic field 30 by producing at Wien speed filter house 160 is described, with reference to Fig. 3 (b), under the effect in the magnetic field 30 that primary electron pe produces at Wien speed filter house 160, according to the axial power of be subject to-x of Fu Linming left hand rule.
Now, control Wien speed filter house 160, make primary electron pe absolute value of suffered power and power suffered under effect in magnetic field 30 under the effect of electric field 20 identical.Thus, be applied to the power of primary electron pe by the magnetic field 30 of Wien speed filter house 160 because the power that is applied to the electric field 20 of primary electron pe by the electric field of Wien speed filter house 160 is offset, thus in x-y plane, be not partial to vertically downward (z direction) mobile.
Primary electron pe by Wien speed filter house 160 by said process vertically downward (z direction of principal axis) mobile and finally inject sample S.Now, inject the primary electron pe of sample S according in the different mechanism of the lip-deep Depth display of sample S, according to the degree of depth of sample S, launch multi-form electronics.
For example, primary electron pe injects the surface of sample S, and launches secondary electron se with this surface generation effect, in the time that primary electron pe injects sample S surperficial dearly, transmitting reflection electronic be, in addition, after primary electron pe injects from sample S transmitting x-line etc.
But in the present embodiment, only comprise that take the electron emission ee from sample S transmitting after injecting at primary electron pe the secondary electron se that launches with the surface action of sample S and deep the reflection electronic be that injects the surface of sample S and launch describe as example.
As shown in Figure 4, when the electron emission ee that is divided into secondary electron se and reflection electronic be is from sample S upwards when (+z direction of principal axis) Vertical Launch, this electron emission ee by before Wien speed filter house 160 along the path movement identical with the scanning pattern of primary electron pe.
In the time that the electron emission ee from sample S transmitting arrives Wien speed filter house 160, be applied to electron emission ee with electric field 20 and the magnetic field 30 of the direction equidirectional in the electric field producing at Wien speed filter house 160 and magnetic field downwards in the time that primary electron pe scans.
Power electron emission ee being applied by the electric field 20 that produces at Wien speed filter house 160 and magnetic field 30 is specific as follows.First, the power that (a) of Fig. 5 applies electron emission ee for the electric field illustrating by producing at Wien speed filter house 160, as shown in Fig. 5 (a), from sample S vertically upward (+z direction of principal axis) mobile electron emission ee be subject to electric field 20 caused+the axial power of x.
In addition, the power that (b) of Fig. 5 applies electron emission ee for the magnetic field 30 illustrating by producing at Wien speed filter house 160, as shown in Fig. 5 (b), the power acting on magnetic field 30 and produce forms along the direction contrary with the power that above-mentioned primary electron pe is applied, and forms along+x direction of principal axis.
,, owing to applying the power that puts on the power equidirectional of electron emission ee with electric field 20, therefore the motion track of electron emission ee is partial to dispose the position of detection portion 150.
In other words, electron emission ee moves along the direction contrary with primary electron pe, is therefore subject to acting on and the power producing and the power applying by electric field 20 with magnetic field 30 simultaneously, thereby is partial to a side.
Now, the speed that is included in the reflection electronic be of electron emission ee is greater than the speed of secondary electron se, but because be subject to identical power, therefore the motion track that the motion track of the relatively slow secondary electron se of speed is compared reflection electronic be is with larger angular bend, and the motion track of the comparatively faster reflection electronic be of speed is with less angular bend.
,, by the speed difference between electronics, be separated into the secondary electron se of more precipitous angle deflection with the reflection electronic be of milder angle deflection by the electron emission ee of Wien speed filter house 160.
By separating and inject the first test section 151 that is configured in Wien speed filter house 160 direct upsides with the secondary electron se of more precipitous angle deflection from the electron emission ee of sample S transmitting, inject the second test section 152 of the upside that is configured in the first test section 151 with the reflection electronic be that speed moves and separates with mild angle deflection faster.
On the other hand, the electronics of the leading section of the first test section 151 and the second test section 152 inject face be formed as skewed, thereby secondary electron se and reflection electronic be can vertically inject the end face of the first test section 151 and the second test section 152, to improve the rate of injecting.
In addition, the face of injecting of the reflection electronic bse of the face of injecting of the secondary electron se of the first test section 151 and the second test section 152 can form the angle differing from one another, so that each electronics is vertically injected, injects rate thereby improve electronics.
Below, the scanning electron microscopy that possesses reflection electronic measuring ability of the second embodiment of the present invention is described.
Fig. 6 is the schematic cross sectional views of the scanning electron microscopy that possesses reflection electronic measuring ability of the second embodiment of the present invention.
With reference to Fig. 6, the scanning electron microscopy that possesses reflection electronic measuring ability 200 of the second embodiment of the present invention comprises lens barrel 110, light source 120, condenser lens 130, aperture 140, detection portion 250, Wien speed filter house 160, object lens 170 and sample mount 180.Lens barrel 110, light source 120, condenser lens 130, aperture 140, Wien speed filter house 160, object lens 170 and the sample mount 180 of the present embodiment are identical with the structure of above-mentioned the first embodiment, therefore omit repeat specification.
Described detection portion 250 comprises the first test section 251, the second test section 252, electronic guide parts 251a, 252a and anti-guide member 253.
Described the first test section 251 is for optionally only detecting the parts of secondary electron se.On the other hand, dispose an electronic guide parts 251a who is used to form (fild) in the end of described the first test section 251, thereby the secondary electron that is guided through Wien speed filter house 160 is to the first test section 251 side shiftings.
Described the second test section 252 is for the parts of a detection of reflected electronics bse optionally.Dispose the electronic guide parts 252a that is used to form field in the end of described the second test section 252, thereby the reflection electronic bse that is guided through Wien speed filter house 160 is to the second test section 252 side shiftings.
Described anti-guide member 253 is for for preventing reflection electronic bse by Wien speed filter house 160 parts to the first test section 251 side shiftings under the effect of the electronic guide parts 251a of the first test section 251, on the path of reflection electronic bse, be formed with breakthrough part, and maintenance ground state, thereby prevent that reflection electronic bse is directed to the first test section 251 sides.
Interest field of the present invention is not limited to above-described embodiment, can be embodied as the embodiment of various ways in appending claims in the scope of recording.Not departing from the scope of claims the present invention for required protection aim, those skilled in the art all flexible multiple scope also should belong to protection scope of the present invention.
Commercial application feasibility
A kind of scanning electron microscopy that possesses reflection electronic measuring ability is provided, this scanning electron microscopy can, using Wien velocity filter by after the electron emission of sample emissions is separated into secondary electron and reflection electronic, be surveyed respectively described secondary electron and reflection electronic.
Claims (7)
1. one kind possesses the scanning electron microscopy of reflection electronic measuring ability, the primary electron producing from light source (Primary Electron) is injected to sample, and detection from the electron emission of sample emissions, is characterized in that, comprising after described primary electron is injected:
Wien speed filter house, be configured between described light source and described sample, produce magnetic field and electric field, thereby described electron emission is separated into secondary electron (Secondary Electron) and reflection electronic (Back Scattered Electron); With
Detection portion, survey respectively from described Wien speed filtration fraction from secondary electron and reflection electronic.
2. the scanning electron microscopy that possesses reflection electronic measuring ability according to claim 1, is characterized in that,
Described detection portion comprises: be configured in the upside of described Wien speed filter house, for surveying the first test section of described secondary electron; And be configured between described the first test section and described light source, for surveying the second test section of described reflection electronic.
3. the scanning electron microscopy that possesses reflection electronic measuring ability according to claim 2, is characterized in that,
The end face of the side that the end face of the side that the described secondary electron of described the first test section is injected or the described reflection electronic of described the second test section are injected is formed as skewed.
4. the scanning electron microscopy that possesses reflection electronic measuring ability according to claim 3, is characterized in that,
The end of the side that the end of the side that the secondary electron of described the first test section is injected and the angle that ground forms are injected than the reflection electronic of described the second test section and the angle that ground forms are large.
5. the scanning electron microscopy that possesses reflection electronic measuring ability according to claim 2, is characterized in that,
Described detection portion further comprises electronic guide parts, the end of described electronic guide parts and described the first test section or described the second test section separates predetermined distance and configures, for described secondary electron is guided to described the first test section side, or described reflection electronic is guided to described the second test section side.
6. the scanning electron microscopy that possesses reflection electronic measuring ability according to claim 5, is characterized in that,
Described detection portion further comprises anti-guide member, and described anti-guide member is configured on the mobile route of described reflection electronic, for preventing that described reflection electronic is directed to described the first test section side under the effect of described electronic guide parts.
7. according to the scanning electron microscopy that possesses reflection electronic measuring ability described in any one in claim 1 to 6, it is characterized in that,
Further comprise lens barrel, described lens barrel is used for accommodating described light source, described Wien speed filter house and described detection portion, and the end side that the primary electron from described light source scanning of described lens barrel penetrates is isolated into vacuum state.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2011-0097827 | 2011-09-27 | ||
| KR20110097827 | 2011-09-27 | ||
| PCT/KR2011/007128 WO2013047919A1 (en) | 2011-09-27 | 2011-09-28 | Scanning electron microscope equipped with back scattered electron detection function |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103890895A true CN103890895A (en) | 2014-06-25 |
| CN103890895B CN103890895B (en) | 2016-05-18 |
Family
ID=47995929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201180073721.XA Expired - Fee Related CN103890895B (en) | 2011-09-27 | 2011-09-28 | Possesses the SEM of reflection electronic measuring ability |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5826941B2 (en) |
| CN (1) | CN103890895B (en) |
| TW (1) | TWI440064B (en) |
| WO (1) | WO2013047919A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104091745A (en) * | 2014-07-18 | 2014-10-08 | 王义林 | Integrated structure integrating TEM fluorescent screen and STEM detector |
| WO2022083789A1 (en) * | 2020-12-02 | 2022-04-28 | 聚束科技（北京）有限公司 | Electron microscope |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103277845B (en) * | 2013-04-27 | 2015-07-15 | 林智勇 | PM2.5 filtering window device functioning at low temperature and high temperature |
| TWI594288B (en) * | 2016-03-14 | 2017-08-01 | 台灣電鏡儀器股份有限公司 | Electron microscope |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5608218A (en) * | 1993-12-28 | 1997-03-04 | Hitachi, Ltd. | Scanning electron microscope |
| JPH1092355A (en) * | 1996-09-13 | 1998-04-10 | Toshiba Corp | Charged particle microscope |
| JP2009265058A (en) * | 2008-04-30 | 2009-11-12 | Shimadzu Corp | Tft array inspection apparatus |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3148353B2 (en) * | 1991-05-30 | 2001-03-19 | ケーエルエー・インストルメンツ・コーポレーション | Electron beam inspection method and system |
| JP4943733B2 (en) * | 2005-04-28 | 2012-05-30 | 株式会社日立ハイテクノロジーズ | Inspection method and inspection apparatus using charged particle beam |
| JP2008010269A (en) * | 2006-06-28 | 2008-01-17 | Horon:Kk | Low vacuum electronic-optical-system image forming device and low vacuum electronic-optical-system image forming method |
-
2011
- 2011-09-28 JP JP2014533169A patent/JP5826941B2/en not_active Expired - Fee Related
- 2011-09-28 CN CN201180073721.XA patent/CN103890895B/en not_active Expired - Fee Related
- 2011-09-28 WO PCT/KR2011/007128 patent/WO2013047919A1/en active Application Filing
- 2011-09-29 TW TW100135375A patent/TWI440064B/en not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5608218A (en) * | 1993-12-28 | 1997-03-04 | Hitachi, Ltd. | Scanning electron microscope |
| JPH1092355A (en) * | 1996-09-13 | 1998-04-10 | Toshiba Corp | Charged particle microscope |
| JP2009265058A (en) * | 2008-04-30 | 2009-11-12 | Shimadzu Corp | Tft array inspection apparatus |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104091745A (en) * | 2014-07-18 | 2014-10-08 | 王义林 | Integrated structure integrating TEM fluorescent screen and STEM detector |
| CN104091745B (en) * | 2014-07-18 | 2016-06-01 | 镇江乐华电子科技有限公司 | The integrated structure of a kind of integrated TEM window of tube and STEM detector |
| WO2022083789A1 (en) * | 2020-12-02 | 2022-04-28 | 聚束科技（北京）有限公司 | Electron microscope |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201314733A (en) | 2013-04-01 |
| JP2014528153A (en) | 2014-10-23 |
| JP5826941B2 (en) | 2015-12-02 |
| WO2013047919A1 (en) | 2013-04-04 |
| TWI440064B (en) | 2014-06-01 |
| CN103890895B (en) | 2016-05-18 |
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