CN103890895B - Possesses the SEM of reflection electronic measuring ability - Google Patents
Possesses the SEM of reflection electronic measuring ability Download PDFInfo
- Publication number
- CN103890895B CN103890895B CN201180073721.XA CN201180073721A CN103890895B CN 103890895 B CN103890895 B CN 103890895B CN 201180073721 A CN201180073721 A CN 201180073721A CN 103890895 B CN103890895 B CN 103890895B
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- Prior art keywords
- reflection electronic
- electron
- test section
- wien
- sem
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24475—Scattered electron detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2448—Secondary particle detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24485—Energy spectrometers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24495—Signal processing, e.g. mixing of two or more signals
Abstract
The present invention relates to a kind of SEM that possesses reflection electronic measuring ability, is the SEM that possesses reflection electronic measuring ability of the present invention by the primary electron (Primary producing from light source? Electron) inject sample, and detect the electron emission from sample emissions after described primary electron is injected, it is characterized in that, comprise: Wien speed filter house, be configured between described light source and described sample, produce magnetic field and electric field, do you thereby described electron emission is separated into secondary electron (Secondary? and reflection electronic (Back Electron)? Scattered? Electron), with detection portion, survey respectively from described Wien speed filtration fraction from secondary electron and reflection electronic. thus, provide a kind of by using Wien velocity filter, can separate and survey the SEM that possesses reflection electronic measuring ability of secondary electron and reflection electronic.
Description
Technical field
The present invention relates to a kind of SEM that possesses reflection electronic measuring ability, relate in more detail one and pass throughWien speed filter house can easily separate secondary electron and the reflection electronic from sample emissions, and surveys respectively that this is secondaryThe SEM that possesses reflection electronic measuring ability of electronics and reflection electronic.
Background technology
Recently along with the minimization trend of information equipment and also need the industrialization of superfine technology in tip materials field, urgentNeed to be to the information of fine structure or material surface shape. Especially, fluffy in the world for latter half since nineteen ninetySuddenly carry out research in nanotechnology, carried out structure in order to find out nano-substance and the various researchs of characteristic thereupon, electron microscope is negativeBlame an important ring.
Recently, utilize the small electric wire of 1～100nm left and right to carry out x-y two-dimensional directional to the specimen surface of placing in a vacuumScanning, thereby detect the signal of the secondary electron that produces on specimen surface, and show and amplify on leonard's tube and screenImage or carry out record, and the device of analytical sample shape and fine structure etc.
Fig. 1 is the figure that represents an example of SEM in the past.
With reference to Fig. 1, SEM 10 be in the past included in the light source 11 of vacuum chamber interscan primary electron pe, fromThe object lens of the secondary electron se of sample emissions and for detection of the detector 12 of the secondary electron se of the surface emitting from sample sAnd form.
But, according to primary electron pe with to the interaction of the penetrating depth of sample S, the electronics of transmitting various ways, althoughBy detect from the electronics of the various ways of sample emissions come can test samples multifrequency nature, but in the scanning using in the pastIn the situation of electron microscope 10, exist to only have secondary electron se is used as detected object, cannot detect from examinationThe shortcoming of other electronics of sample transmitting.
Summary of the invention
Therefore, the present invention proposes in order to solve this problem in the past, its objective is and provides one to possess reflection electronic inspectionThe SEM of brake, this SEM is by being used Wien velocity filter can separate secondary electronWith reflection electronic and survey.
Above-mentioned purpose realizes by the SEM that possesses reflection electronic measuring ability of the present invention, tool of the present inventionThe primary electron producing from light source (PrimaryElectron) is injected examination by the SEM of standby reflection electronic measuring abilitySample, and detect after described primary electron is injected from the electron emission of sample emissions, it is characterized in that, comprising: Wien speedFilter house, is configured between described light source and described sample, for generation of magnetic field and electric field, and described electron emission is dividedFrom being secondary electron (SecondaryElectron) and reflection electronic (BackScatteredElectron); With detection portion, pointDo not survey from described Wien speed filtration fraction from secondary electron and reflection electronic.
In addition, described detection portion can comprise the upside that is configured in described Wien speed filter house, for surveying described secondary electronThe first test section; And be configured between described the first test section and described light source, for surveying second of described reflection electronicTest section.
In addition the end face of a side that, the described secondary electron of described the first test section is injected or the institute of described the second test sectionThe end face of stating the side that reflection electronic injects can be formed as skewed.
The end of the side that in addition, the secondary electron of described the first test section is injected can be than described with the angle that ground formsThe end of the side that the reflection electronic of the second test section is injected and the angle that ground forms are large.
In addition, described detection portion can further comprise electronic guide parts, described electronic guide parts and described the first test sectionOr the end of described the second test section separates predetermined distance and configure, detect for described secondary electron being guided to described firstPortion's side, or described reflection electronic is guided to described the second test section side.
In addition, described detection portion can further comprise anti-guide member, and described anti-guide member is configured in described reflection electronicOn mobile route, for preventing that described reflection electronic is directed to described first and detects under the effect of described electronic guide partsPortion's side.
In addition, can further comprise lens barrel, described lens barrel be used for accommodating described light source, described Wien speed filter house and described inDetection portion, and the end side that the primary electron from described light source scanning of described lens barrel penetrates can be isolated into vacuum state.
According to the present invention, provide a kind of can easily separate from the secondary electron of sample emissions by Wien speed filter house andReflection electronic, and survey respectively the SEM that possesses reflection electronic measuring ability of secondary electron and reflection electronic.
In addition, without increasing extraly structure, and use Wien speed filter house can easily separate secondary electron and reflectionElectronics.
In addition, by detect secondary electron and reflection electronic simultaneously, thereby can understand surface characteristic and the inside of sample simultaneouslyCharacteristic.
In addition, by the detection portion that surveys secondary electron and reflection electronic is arranged in lens barrel, thus structure on the wholeBecome compact structure.
In addition, form by the electronics of detection portion being injected to end slope, so that electronics vertically injects, thereby can improve electricityThe rate of injecting of son and the accuracy of detection of sample character.
Brief description of the drawings
Fig. 1 is the figure that represents an example of SEM in the past;
Fig. 2 is schematically the analysing and observe of the SEM that possesses reflection electronic measuring ability of the first embodiment of the present inventionFigure;
Fig. 3 is illustrated in the SEM that possesses reflection electronic measuring ability of Fig. 2 by Wien speed filter houseThe figure of primary electron action;
Fig. 4 is illustrated in the transmitting electricity from sample emissions in the SEM that possesses reflection electronic measuring ability of Fig. 2The figure of the motion track of son;
Fig. 5 is illustrated in the SEM that possesses reflection electronic measuring ability of Fig. 2 by Wien speed filter houseThe figure of electron emission action;
Fig. 6 is schematically the analysing and observe of the SEM that possesses reflection electronic measuring ability of the second embodiment of the present inventionFigure.
Detailed description of the invention
Before explanation of the present invention, it should be noted that carrying out, in multiple embodiment, the structure with same structure is wantedElement uses identical Reference numeral also in the first embodiment, to carry out representational explanation, and in other embodiments to theThe structure that one embodiment is different describes.
Below, with reference to accompanying drawing, the SEM that possesses reflection electronic measuring ability of the first embodiment of the present invention is enteredThe explanation that row is detailed.
Fig. 2 is schematically the analysing and observe of the SEM that possesses reflection electronic measuring ability of the first embodiment of the present inventionFigure.
With reference to Fig. 2, the SEM that possesses reflection electronic measuring ability 100 of the first embodiment of the present invention comprisesLens barrel 110, light source 120, condenser lens 130, aperture 140, detection portion 150, Wien speed filter house 160, object lens170 and sample mount 180.
Described lens barrel 110 is for by light source 120 described later, condenser lens 130, aperture 140, detection portion 150, WienSpeed filter house 160 and object lens 170 are housed in inner outer wrapper, penetrate for primary electron (PrimaryElectron:pe)The side end going out, the end of sample mount 180 sides that configure for sample S keeps vacuum state.
Described light source 120 scans being provided with of below for the primary electron pe producing when by negative electrode in heating lens barrel 110The parts of sample mount 180 sides of sample S.
Described condenser lens 130 is the parts for the primary electron pe focusing of launching from above-mentioned light source 120 being converged to a bit.
Described aperture 140 is for for making the primary electron pe converging by condenser lens 130 become the portion of the form of certain wavelengthPart.
Described detection portion 150 is for for detection of the secondary electron that contains from sample S transmitting after injecting at primary electron pe(SecondaryElectron) parts of the electron emission ee of se and reflection electronic (BackScatteredElectron) bse,Comprise the first test section 151 and the second test section 152.
Described the first test section 151, for only surveying from the secondary electron se of the electron emission ee of sample S transmitting, is configured inBetween light source 120 and Wien speed filter house 160 described later. Because secondary electron se is from the upwards mistake of side shifting of sample SIn journey, be partial to and inject the electronics of the first test section 151 to side, therefore the end face of the first test section 151 be formed as skewed,Secondary electron can vertically be injected.
Described the second test section 152, for only detecting from the reflection electronic be of the electron emission ee of sample S transmitting, is configured inBetween light source 120 and the first test section 151, be configured in the upside of the first test section 151. On the other hand, second detectThe end face of portion 152 also can with above-mentioned the first test section 151 be similarly formed as skewed, due to the deflection of reflection electronic beDegree is less than secondary electron se, and therefore the angle of inclination of the end face of the second test section is also preferably formed as being less than the first test section 151The angle of inclination of end face.
In other words, the secondary electron se of the first test section 151 inject angle θ 1 that face and ground forms be preferably formed into thanThe angle θ 2 that the reflection electronic be of the second test section 152 injects face and ground formation is large.
Described Wien speed filter house 160, for being configured between the first test section 151 and sample mount 180, is configured inThe parts of the downside of one test section 151, are partial to detection portion for the mobile route that makes the electron emission ee launching from sample S150 sides. Meanwhile, Wien speed filter house 160 utilization is included in secondary from the electron emission ee of sample S transmittingVariant between the translational speed of electronics se and reflection electronic be, execution physical separation secondary electron se and reflection electronic be'sEffect.
, Wien speed filter house 160 produces at the face vertical with the moving direction of the electron emission ee launching from sample SThe Electric and magnetic fields being perpendicular to one another, thus the motion track of secondary electron se and reflection electronic be is partial to.
Described object lens 170 focus on sample S table for playing the focus of the primary electron pe that produces and move down at light source 120The parts of the effect of face.
Described sample mount 180 is for being configured in lens barrel below, for supporting the parts of sample S. On the other hand, sample mount180 can move along three direction of principal axis, can be controlled for to be easy to observe sample S by rotate and inclination etc.
The following describes the work of the first embodiment of the above-mentioned SEM 100 that possesses reflection electronic measuring ability.
Fig. 3 is illustrated in the SEM that possesses reflection electronic measuring ability of Fig. 2 by Wien speed filter houseThe figure of action of primary electron, Fig. 4 be illustrated in the SEM that possesses reflection electronic measuring ability of Fig. 2 fromThe figure of the motion track of the electron emission of sample emissions, Fig. 5 is the scanning that possesses reflection electronic measuring ability that is illustrated in Fig. 2In electron microscope, pass through the figure of the action of the electron emission of Wien speed filter house.
First with reference to Fig. 2, the primary electron pe that the light source 120 in lens barrel 110 produces is subject to high-tension applying and is accelerated,Thereby be scanned the sample mount that sample S is installed 180 sides of below. But use at this moment, the rule of lens barrel 110 insideFixed reflector (not shown) is controlled the scanning direction of primary electron pe.
The primary electron pe scanning from light source 120 arrives Wien speed filter house 160 after condenser lens 130 and aperture 140.Now, Wien speed filter house 160 on the face of regulation parallel to the ground along with the direction that is perpendicular to one another produce electric field andMagnetic field.
(a) of Fig. 3 is applied to the power of primary electron for the electric field by producing at Wien speed filter house 160 is described, ginsengAccording to Fig. 3 (a), the primary electron pe that moves down through Wien speed filter house 160 time owing to filtering in Wien speedThe electric field 20 that portion 160 produces and the axial power of be subject to+x.
Meanwhile, Fig. 3 (b) is applied to for the magnetic field 30 by producing at Wien speed filter house 160 is describedThe power of primary electron, with reference to Fig. 3 (b), the effect in the magnetic field 30 that primary electron pe produces at Wien speed filter house 160Under, according to the axial power of be subject to-x of Fu Linming left hand rule.
Now, control Wien speed filter house 160, make primary electron pe suffered power and in magnetic field under the effect of electric field 20Under 30 effect, the absolute value of suffered power is identical. Thus, be applied to former by the magnetic field 30 of Wien speed filter house 160The power of electronics pe is because the power that is applied to the electric field 20 of primary electron pe by the electric field of Wien speed filter house 160 is offset,Thereby in x-y plane, be not partial to vertically downward (z direction) mobile.
Primary electron pe by Wien speed filter house 160 by said process vertically downward (z direction of principal axis) mobile andInject eventually sample S. Now, inject the primary electron pe basis of sample S in the different mechanism of the lip-deep Depth display of sample S,According to the degree of depth of sample S, launch multi-form electronics.
For example, primary electron pe injects the surface of sample S, and launches secondary electron se with this surface generation effect, when former electricityWhen sub-pe injects sample S surperficial dearly, transmitting reflection electronic be, in addition, after primary electron pe injects from sample STransmitting x-line etc.
But in the present embodiment, only to comprise and sample S from the electron emission ee of sample S transmitting after injecting at primary electron peSurface action and the secondary electron se that launches and deep the reflection electronic be that injects the surface of sample S and launch are exampleDescribe.
As shown in Figure 4, when the electron emission ee that is divided into secondary electron se and reflection electronic be is from upwards (+z of sample SDirection of principal axis) when Vertical Launch, this electron emission ee by before Wien speed filter house 160 along with primary electron peThe identical path movement of scanning pattern.
In the time that the electron emission ee from sample S transmitting arrives Wien speed filter house 160, and scan downwards at primary electron peTime the electric field 20 of direction equidirectional in the electric field that produces at Wien speed filter house 160 and magnetic field and magnetic field 30 be applied to and send outThe sub-ee of radio.
Power electron emission ee being applied by the electric field 20 that produces at Wien speed filter house 160 and magnetic field 30 is specific as follows.First, Fig. 5 (a) is for illustrating that electric field by producing at Wien speed filter house 160 applies electron emission eePower, as shown in Fig. 5 (a), is subject to electric field 20 from sample S electron emission ee that (+z direction of principal axis) moves vertically upwardThe axial power of caused+x.
In addition, Fig. 5 (b) is for illustrating that magnetic field 30 by producing at Wien speed filter house 160 is to electron emission eeThe power applying, as shown in Fig. 5 (b), act on magnetic field 30 and the power that produces along with above-mentioned primary electron pe is appliedThe contrary direction of power forms, and forms along+x direction of principal axis.
, owing to applying the power that puts on the power equidirectional of electron emission ee with electric field 20, therefore moving of electron emission eeMoving trajectory bias is in the position that disposes detection portion 150.
In other words, electron emission ee moves along the direction contrary with primary electron pe, is therefore subject to doing with magnetic field 30 simultaneouslyWith and produce power and the power applying by electric field 20, thereby be partial to a side.
Now, the speed that is included in the reflection electronic be of electron emission ee is greater than the speed of secondary electron se, but because is subject toIdentical power, the motion track that therefore motion track of the relatively slow secondary electron se of speed is compared reflection electronic be is with moreLarge angular bend, the motion track of the comparatively faster reflection electronic be of speed is with less angular bend.
,, by the speed difference between electronics, be separated into steeper by the electron emission ee of Wien speed filter house 160The secondary electron se of high and steep angle deflection and with the reflection electronic be of milder angle deflection.
By separating and inject and be configured in the secondary electron se of more precipitous angle deflection from the electron emission ee of sample S transmittingThe first test section 151 of Wien speed filter house 160 direct upsides, moves and with mild angle deflection with speed fasterAnd the reflection electronic be separating injects the second test section 152 of the upside that is configured in the first test section 151.
On the other hand, the electronics of the leading section of the first test section 151 and the second test section 152 inject face be formed as skewed,Thereby secondary electron se and reflection electronic be can vertically inject the end face of the first test section 151 and the second test section 152,To improve the rate of injecting.
In addition penetrating of the reflection electronic bse of the face of injecting of the secondary electron se of the first test section 151 and the second test section 152,Enter face and can form the angle differing from one another, so that each electronics is vertically injected, inject rate thereby improve electronics.
Below, the SEM that possesses reflection electronic measuring ability of the second embodiment of the present invention is described.
Fig. 6 is schematically the analysing and observe of the SEM that possesses reflection electronic measuring ability of the second embodiment of the present inventionFigure.
With reference to Fig. 6, the SEM that possesses reflection electronic measuring ability 200 of the second embodiment of the present invention comprisesLens barrel 110, light source 120, condenser lens 130, aperture 140, detection portion 250, Wien speed filter house 160, object lens170 and sample mount 180. The lens barrel 110 of the present embodiment, light source 120, condenser lens 130, aperture 140, Wien speedFilter house 160, object lens 170 and sample mount 180 are identical with the structure of above-mentioned the first embodiment, therefore omit repeat specification.
Described detection portion 250 comprise the first test section 251, the second test section 252, electronic guide parts 251a, 252a andAnti-guide member 253.
Described the first test section 251 is for optionally only detecting the parts of secondary electron se. On the other hand, describedThe end of one test section 251 disposes an electronic guide parts 251a who is used to form (fild), thereby is guided through Wien speedThe secondary electron of degree filter house 160 is to the first test section 251 side shiftings.
Described the second test section 252 is for the parts of a detection of reflected electronics bse optionally. At described the second test section252 end disposes an electronic guide parts 252a who is used to form, thereby is guided through Wien speed filter house 160Reflection electronic bse is to the second test section 252 side shiftings.
Described anti-guide member 253 is for for preventing that reflection electronic bse by Wien speed filter house 160 is in the first detectionUnder the effect of the electronic guide parts 251a of portion 251 to the parts of the first test section 251 side shiftings, reflection electronic bse'sOn path, be formed with breakthrough part, and keep ground state, thereby prevent that reflection electronic bse is directed to the first test section 251Side.
Interest field of the present invention is not limited to above-described embodiment, can be real in the scope of recording in appending claimsBe now the embodiment of various ways. Not departing from the scope of claims the present invention for required protection aim, this areaTechnical staff all flexible multiple scope also should belong to protection scope of the present invention.
Commercial application feasibility
A kind of SEM that possesses reflection electronic measuring ability is provided, and this SEM can used dimensionGrace velocity filter, by after the electron emission of sample emissions is separated into secondary electron and reflection electronic, is surveyed respectively described timeLevel electronics and reflection electronic.
Claims (4)
1. possess a SEM for reflection electronic measuring ability, the primary electron producing from light source injected to sample,And detection from the electron emission of sample emissions, is characterized in that, comprising after described primary electron is injected:
Wien speed filter house, is configured between described light source and described sample, produces magnetic field and electric field, thereby by describedRadio is separated into secondary electron and reflection electronic; With
Detection portion, survey respectively from described Wien speed filtration fraction from secondary electron and reflection electronic,
Described detection portion comprises: be configured in the upside of described Wien speed filter house, for surveying first of described secondary electronTest section; And be configured between described the first test section and described light source, for surveying the second test section of described reflection electronic,
Described detection portion further comprises electronic guide parts, described electronic guide parts and described the first test section or describedThe end of two test sections separates predetermined distance and configures, for described secondary electron being guided to described the first test section side, orDescribed reflection electronic is guided to described the second test section side,
Described detection portion further comprises anti-guide member, and described anti-guide member is configured in the mobile route of described reflection electronicUpper, for preventing that described reflection electronic is directed to described the first test section side under the effect of described electronic guide parts.
2. the SEM that possesses reflection electronic measuring ability according to claim 1, is characterized in that,
The end face of the side that the described secondary electron of described the first test section is injected or the described reflection of described the second test sectionThe end face of the side that electronics is injected is formed as skewed.
3. the SEM that possesses reflection electronic measuring ability according to claim 2, is characterized in that,
The angle that the end of the side that the secondary electron of described the first test section is injected and ground form is than described the second test sectionEnd and the angle that ground forms of the side injected of reflection electronic large.
4. according to the SEM that possesses reflection electronic measuring ability described in any one in claim 1 to 3,It is characterized in that,
Further comprise lens barrel, described lens barrel is used for accommodating described light source, described Wien speed filter house and described detection portion,And the end side that the primary electron from described light source scanning of described lens barrel penetrates is isolated into vacuum state.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20110097827 | 2011-09-27 | ||
| KR10-2011-0097827 | 2011-09-27 | ||
| PCT/KR2011/007128 WO2013047919A1 (en) | 2011-09-27 | 2011-09-28 | Scanning electron microscope equipped with back scattered electron detection function |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103890895A CN103890895A (en) | 2014-06-25 |
| CN103890895B true CN103890895B (en) | 2016-05-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201180073721.XA Expired - Fee Related CN103890895B (en) | 2011-09-27 | 2011-09-28 | Possesses the SEM of reflection electronic measuring ability |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5826941B2 (en) |
| CN (1) | CN103890895B (en) |
| TW (1) | TWI440064B (en) |
| WO (1) | WO2013047919A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103277845B (en) * | 2013-04-27 | 2015-07-15 | 林智勇 | PM2.5 filtering window device functioning at low temperature and high temperature |
| CN104091745B (en) * | 2014-07-18 | 2016-06-01 | 镇江乐华电子科技有限公司 | The integrated structure of a kind of integrated TEM window of tube and STEM detector |
| TWI594288B (en) * | 2016-03-14 | 2017-08-01 | 台灣電鏡儀器股份有限公司 | Electron microscope |
| CN114220725A (en) * | 2020-12-02 | 2022-03-22 | 聚束科技（北京）有限公司 | Electron microscope |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5608218A (en) * | 1993-12-28 | 1997-03-04 | Hitachi, Ltd. | Scanning electron microscope |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3148353B2 (en) * | 1991-05-30 | 2001-03-19 | ケーエルエー・インストルメンツ・コーポレーション | Electron beam inspection method and system |
| JP3499690B2 (en) * | 1996-09-13 | 2004-02-23 | 株式会社東芝 | Charged particle microscope |
| JP4943733B2 (en) * | 2005-04-28 | 2012-05-30 | 株式会社日立ハイテクノロジーズ | Inspection method and inspection apparatus using charged particle beam |
| JP2008010269A (en) * | 2006-06-28 | 2008-01-17 | Horon:Kk | Low vacuum electronic-optical-system image forming device and low vacuum electronic-optical-system image forming method |
| JP2009265058A (en) * | 2008-04-30 | 2009-11-12 | Shimadzu Corp | Tft array inspection apparatus |
-
2011
- 2011-09-28 CN CN201180073721.XA patent/CN103890895B/en not_active Expired - Fee Related
- 2011-09-28 JP JP2014533169A patent/JP5826941B2/en not_active Expired - Fee Related
- 2011-09-28 WO PCT/KR2011/007128 patent/WO2013047919A1/en active Application Filing
- 2011-09-29 TW TW100135375A patent/TWI440064B/en not_active IP Right Cessation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5608218A (en) * | 1993-12-28 | 1997-03-04 | Hitachi, Ltd. | Scanning electron microscope |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI440064B (en) | 2014-06-01 |
| JP5826941B2 (en) | 2015-12-02 |
| WO2013047919A1 (en) | 2013-04-04 |
| TW201314733A (en) | 2013-04-01 |
| JP2014528153A (en) | 2014-10-23 |
| CN103890895A (en) | 2014-06-25 |
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