CN103928537A - Solar cell, module thereof and manufacturing method thereof - Google Patents
Solar cell, module thereof and manufacturing method thereof Download PDFInfo
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- CN103928537A CN103928537A CN201310067467.3A CN201310067467A CN103928537A CN 103928537 A CN103928537 A CN 103928537A CN 201310067467 A CN201310067467 A CN 201310067467A CN 103928537 A CN103928537 A CN 103928537A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000002161 passivation Methods 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000005452 bending Methods 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 57
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 238000005538 encapsulation Methods 0.000 claims description 8
- 230000005684 electric field Effects 0.000 abstract description 23
- 238000005245 sintering Methods 0.000 abstract description 15
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 6
- 239000002002 slurry Substances 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 1
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000011267 electrode slurry Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Life Sciences & Earth Sciences (AREA)
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- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
A solar cell, a module thereof and a method for manufacturing the same, the cell comprising: the light emitting diode comprises a substrate including a front surface and a back surface, an emitter layer arranged at the front surface, a passivation layer arranged at the back surface, an opening extending and bending on the passivation layer, and a back electrode arranged on the passivation layer and contacting the back surface through the opening. The projection area of the opening on the back surface accounts for 3% -12% of the area of the back surface. The invention also provides another battery, which comprises a plurality of annular openings surrounded by the annular ring from inside to outside. The current collection effect of the back electrode can be improved by the design of the single opening or the plurality of annular openings which are continuously extended and bent, and the back electric field structure formed by sintering has enough thickness and good quality, and can improve the photoelectric conversion efficiency of the cell.
Description
Technical field
The present invention relates to a kind of solar cell, its module and manufacture method thereof, particularly relate to a kind of silicon wafer solar cell, its module and manufacture method thereof.
Background technology
Consult Fig. 1, Fig. 2, known silicon wafer solar cell mainly comprises: one has the substrate 91 at contrary positive 911 and a back side 912, back of the body electric field structure (the Local Back Surface Field of multiple parts that are positioned at this back side 912, be called for short LBSF) 92, one is positioned at the passivation layer 93 on this back side 912, multiple wire perforates 94 that are positioned on this passivation layer 93, one is positioned at the backplate 95 on this passivation layer 93, at least one bus electrode 96 that is positioned on this passivation layer 93 and contacts this backplate 95, an and front electrode 97 that is positioned at the front 911 of this substrate 91.
This passivation layer 93 is for repairing, reduce the blemish of this substrate 91, and then reduction charge carrier is at the recombination rate at 912 places, the back side of this substrate 91, to promote the conversion efficiency of battery.The plurality of back of the body electric field structure 92 respectively corresponding the plurality of wire perforate 94 ground is positioned at this 912 places, back side, and the carrier concentration of back of the body electric field structure 92 is greater than the carrier concentration of this substrate 91, can help to promote carrier collection efficiency and photoelectric conversion efficiency.
This backplate 95 comprises multiple second conductive parts 952 that can contact respectively first conductive parts 951 at this back side 912 and one end away from this substrate 91 of the plurality of the first conductive part 951 of a connection via the plurality of wire perforate 94 and cover these passivation layer 93 surfaces.
When this solar cell is made, can utilize vacuum coating mode to form the passivation layer 93 of continuous stratiform, the part of recycling laser processing procedure (Laser Ablation Process) this passivation layer 93 of etching, to make the plurality of wire perforate 94.And in order to reduce the injury of laser to this passivation layer 93, general as far as possible taking low-energy laser as main, laser is to beat on this passivation layer 93 one by one, to complete one by one the processing procedure that punches of each wire perforate 94.Then utilize wire mark mode to be coated with electrocondution slurry on this passivation layer 93, this electrocondution slurry can flow and insert in the plurality of wire perforate 94, and make electrocondution slurry curing molding through high temperature sintering (firing) processing procedure, just complete and make this backplate 95.And in sintering process, the material of electrocondution slurry (being generally Al) can mix with the material (being generally Si) of this substrate 91 via the plurality of wire perforate 94, and then form taking Al-Si compound as main the plurality of back of the body electric field structure 92.
Although wire perforate 94 designs of cells known can reach the object that forms back of the body electric field structure 92, but because each wire perforate 94 all has two end opposite 941, the end points position of wire perforate 94 is only formed by single-shot laser-induced thermal etching, energy is lower, therefore easily cause passivation layer 93 materials of part to remain in hole, make the hole at end points position of wire perforate 94 both sides imperfect.Relatively, the non-end points position of wire perforate 94 can be beaten on this passivation layer 93 and can form overlappingly because of wantonly two laser, and therefore energy is compared with high and passivation layer 93 materials can be removed completely.
And above-mentioned passivation layer 93 materials remain in the problem at the end points position of wire perforate 94, can affect the contacting of this backplate 95 and this substrate 91, and then make electric current collection usefulness variation, wherein because the electrocondution slurry of this backplate 95 can be subject to the residual interference of passivation layer 93 materials in the time of wire mark, thereby the difficult end points position of inserting this wire perforate 94 completely, so will cause electrocondution slurry material to mix the thinner thickness of formed Al-Si alloy with substrate 91 materials, and then make the follow-up thickness attenuation of back of the body electric field structure (BSF) 92 forming via sintering, poor quality, and the function that therefore makes to carry on the back electric field structure 92 is impaired, thereby cause open circuit voltage and short circuit current to decline, and make the conversion efficiency variation of battery.
Summary of the invention
The object of the present invention is to provide one can promote film layer quality, thereby can promote solar cell, its module and the manufacture method thereof of photoelectric conversion efficiency.
Solar cell of the present invention, comprising: one comprise a front that is subject to light and a substrate with respect to this positive back side, one be disposed at the emitter layer at this front place, a front electrode that is disposed at this front place and contact this emitter layer, a passivation layer that is disposed at this back side place and a backplate being disposed on this passivation layer.This solar cell also comprises that one is extended and is disposed at bendingly the perforate on this passivation layer, and the projected area of this perforate on this back side accounts for 3%～12% of this backside area; This backplate contacts this back side via this perforate.
Solar cell of the present invention, this perforate is helical form.
Solar cell of the present invention, this perforate comprises multiplely extends and along spaced the first wire hole of second direction and multiple second wire hole along this second direction extension of vertical this first direction along first direction, the plurality of the second wire hole is connected between the one end in wantonly two adjacent the first wire holes, and the plurality of the second wire hole does not connect to each other.
Solar cell of the present invention, the projected area of this perforate on this back side accounts for 4%～9% of this backside area.
The manufacture method of solar cell of the present invention, comprising:
A substrate is provided, and this substrate comprises that one is subject to the positive of light and one with respect to this positive back side;
Form an emitter layer in this front;
Form a passivation layer at this back side;
Form a front electrode contacting with this emitter layer in this front;
On this passivation layer, form a perforate, this step utilizes laser to form multiple connected perforation continuously each other, formed this perforate of extending and bending by the plurality of perforation, wherein the plurality of perforation comprises last first hole of second hole, last formation of first hole of first formation, second formation and the second last hole that penultimate forms, and this first hole and this last the first hole are only connected with this second hole and this second last hole respectively, the projected area of this perforate on this back side accounts for 3%～12% of this backside area; And
On this passivation layer, form a backplate, and make this backplate contact this back side via this perforate.
The manufacture method of solar cell of the present invention, is characterized in that, the projected area of this perforate on this back side accounts for 4%～9% of this backside area.
Another kind of solar cell of the present invention, comprising: one comprise a front that is subject to light and a substrate with respect to this positive back side, one be disposed at the emitter layer at this front place, a front electrode that is disposed at this front place and contact this emitter layer, a passivation layer that is disposed at this back side place and a backplate being disposed on this passivation layer.This solar cell also comprises multiple annular aperture that are disposed on this passivation layer and encircle from inside to outside encirclement, the area that the plurality of annular aperture is surrounded is neither identical, and the plurality of annular aperture surrounds the perforate of encirclement area circlet shape to surround the large annular aperture of area to each other; This backplate comprises multiple the first conductive parts that contact respectively this back side via the plurality of annular aperture.
Another kind of solar cell of the present invention, the projected area of the plurality of annular aperture on this back side accounts for 3%～12% of this backside area.
Solar cell module of the present invention, comprising: first sheet material being oppositely arranged and second sheet material and an encapsulation material between this first sheet material and this second sheet material.This solar cell module also comprises at least one any solar cell described above, and this solar cell is arranged between this first sheet material and this second sheet material, and this encapsulation material contacts this solar cell.
Beneficial effect of the present invention is: by single perforate or multiple annular aperture of continuous extension and bending, can reduce or eliminate the end points position of overall perforate, the residual quantity of the passivation material in overall perforate seldom or is not almost had, therefore can promote the electric current collection effect of this backplate, and the thickness of the back of the body electric field structure of sintering formation is enough, quality is good, and can promote open circuit voltage, short circuit current and the photoelectric conversion efficiency of battery.
Brief description of the drawings
Fig. 1 is a kind of schematic rear view of known solar cells, and in figure, illustrates multiple wire perforates;
Fig. 2 is the cutaway view of getting along the A-A line of Fig. 1;
Fig. 3 is the partial schematic sectional view of one first preferred embodiment of solar cell module of the present invention;
Fig. 4 is the schematic rear view of a solar cell of this first preferred embodiment;
Fig. 5 is the cutaway view of getting along the B-B line of Fig. 4;
Fig. 6 is the partial sectional view of getting along the C-C line of Fig. 4;
Fig. 7 is the flow chart of steps of one first preferred embodiment of the manufacture method of solar cell of the present invention;
Fig. 8 is the schematic diagram of each step of this manufacture method while carrying out;
Fig. 9 is the structural representation that wherein a step forms of this manufacture method, is mainly presented at the structure of the perforate forming on a passivation layer;
Figure 10 is the photo that sweep electron microscope (SEM) takes, the solar cell that Figure 10 (a) is the present invention's the first preferred embodiment, and Figure 10 (b) is traditional solar cell (comparative example);
Figure 11 is the schematic rear view of a solar cell of one second preferred embodiment of solar cell module of the present invention, omits and draws a backplate, so that a perforate is exposed in figure;
Figure 12 is the schematic rear view of a solar cell of one the 3rd preferred embodiment of solar cell module of the present invention, omits and draws a backplate, so that a perforate is exposed in figure;
Figure 13 is the schematic rear view of a solar cell of one the 4th preferred embodiment of solar cell module of the present invention, omits and draws a backplate, so that a perforate is exposed in figure;
Figure 14 is the schematic rear view of a solar cell of one the 5th preferred embodiment of solar cell module of the present invention, omits and draws a backplate, so that multiple annular aperture is exposed in figure;
Figure 15 is the partial schematic sectional view of the solar cell of the 5th preferred embodiment, and it analyses and observe position as the position of the D-D line signal of Figure 14;
Figure 16 is the schematic rear view of a solar cell of one the 6th preferred embodiment of solar cell module of the present invention, omits and draws a backplate, so that multiple annular aperture is exposed in figure.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in detail, is noted that in the following description content, and similarly element is to represent with identical numbering.
Consult Fig. 3, Fig. 4, the first preferred embodiment of solar cell module of the present invention comprises: one first sheet material 1 being oppositely arranged and one second sheet material 2, multiple array are arranged in solar cell 3 and at least one encapsulation material 4 that is positioned between this first sheet material 1 and this second sheet material 2 and contacts the plurality of solar cell 3 between this first sheet material 1 and this second sheet material 2.Wherein, this module can comprise that at least one solar cell 3 is just passable, not taking multiple solar cells 3 as imperative.
This first sheet material 1 is not particularly limited on the implementation with this second sheet material 2, can use glass or plastic sheet, and the sheet material that is positioned at a side of battery sensitive surface is necessary for light-permeable.If be subject to the solar cell of light two-sided, this first sheet material 1 all must light-permeable with this second sheet material 2.The material of this encapsulation material 4 is for example the ethylene-vinyl acetate copolymer (EVA) of light-permeable, or other can be used for the associated materials of solar cell module packaging.
The plurality of solar cell 3 is by the unshowned welding wire of figure (ribbon) electrical connection.The structure of the plurality of solar cell 3 is all identical, below only describes as an example of one of them example.Certainly, the structure of the plurality of solar cell 3 in a module is not to be all mutually imperative.
Consult Fig. 4, Fig. 5, Fig. 6, this solar cell 3 comprises: a substrate 31, a front electrode 32, a passivation layer 33, a back of the body electric field structure (Back Surface Field is called for short BSF) 34, a perforate 35, a backplate 36 and at least one bus electrode 37.
This substrate 31 comprises that one is subject to front 311 and the back side 312 with respect to this front 311 of light.These 311 places, front configure an emitter layer 313, and this emitter layer 313 is contrary with the conductivity of this substrate 31, and one of them is p-type semiconductor, and another is N-shaped semiconductor.In addition, the front 311 of this substrate 31 is the unshowned anti-reflecting layer of a configurable figure also, can promote the light quantity that enters of battery, and this anti-reflecting layer also can be as the passivation layer of this emitter layer 313, is usually located between this front electrode 32 and this emitter layer 313.
This front electrode 32 is disposed at these 311 places, front and contacts this emitter layer 313, and this front electrode 32 coordinates with this backplate 36 electric energy of exporting this battery, due to the non-improvement emphasis of the present invention of this front electrode 32, no longer explanation.
This passivation layer 33 is disposed at 312 places, the back side of this substrate 31, for passivation and this back side 312 of repairing, thereby reduces charge carrier recombination-rate surface (Surface Recombination Velocity is called for short SRV).The material of this passivation layer 33 is for example the combination of oxide, nitride, oxide and nitride, or other can be used for passivation, repair the dielectric material on these substrate 31 surfaces.
This back of the body electric field structure 34 is positioned at 312 places, the back side of this substrate 31, and to position that should perforate 35.This back of the body electric field structure 34 is identical with the conductivity of this substrate 31, the p-type semiconductor that the back of the body electric field structure 34 of the present embodiment forms for aluminium silicon (Al-Si) composite material, its carrier concentration is greater than the carrier concentration of this substrate 31, electric field action block electrons by back of the body electric field structure 34 moves towards the direction at this back side 312, make electronics be collected in this emitter layer 313, to promote carrier collection efficiency and conversion efficiency.
This perforate 35 is extended and is disposed at bendingly on this passivation layer 33, and runs through the upper and lower surface of this passivation layer 33, so that the position corresponding to this perforate 35 at the back side 312 of this substrate 31 can not covered by this passivation layer 33.The perforate 35 of the present embodiment comprises multiplely extends and along spaced the first wire hole 351 of second direction 52 and multiple second wire hole 352 of extending along this second direction 52 of vertical this first direction 51 along a first direction 51, the plurality of the second wire hole 352 is connected between the one end in wantonly two adjacent the first wire holes 351, and the plurality of the second wire hole 352 does not connect to each other.Particularly, the plurality of the second wire hole 352 can be divided into two groups, and wherein the plurality of second wire hole 352 of a group is connected between the one end in n and n+1 the first wire hole 351, and n=1,3,5 ... Deng odd number; The plurality of second wire hole 352 of another group is connected between the one end in m and m+1 the first wire hole 351, m=2,4,6 ... Deng even number.Preferably, the projected area of this perforate 35 on this back side 312 accounts for 0.5%～20% of these back side 312 areas, is more preferred from 3%～12%, wherein can obtain best conversion efficiency in 4%～9% time.
It is noted that, when the invention process, each wire hole is not taking parallel this first direction 51 or this second direction 52 as imperative.In addition, the each position in this perforate 35, not taking the hole of wire form as restriction, can be also also other shapes.
This backplate 36 is disposed on this passivation layer 33, and contacts this back side 312 and this back of the body electric field structure 34 via this perforate 35.This backplate 36 comprises that first conductive part 361 and that is arranged in this perforate 35 is positioned on the surface of this passivation layer 33 and connects the second conductive part 362 of the side away from this substrate 31 of this first conductive part 361.
This bus electrode 37 is disposed on this passivation layer 33 and contacts this backplate 36, and this bus electrode 37 extends along this second direction 52, and with the location overlap in the plurality of first wire hole 351 of this perforate 35.The bus electrode 37 of the present embodiment can contact this back side 312 via this perforate 35, but while enforcement, this bus electrode 37 also can not contact this back side 312, now the position to should bus electrode 37 of this passivation layer 33 can not be formed with hole, although or have hole, between this bus electrode 37 and this back side 312, have the material of this backplate 36.The bus electrode 37 of the present embodiment is continuous strip, but not as limit, for example, this bus electrode 37 also can comprise multiple along the spaced electrode part (not shown) of this second direction 52, each electrode part can be overlapping with a first wire hole 351 respectively, or each electrode part can be simultaneously overlapping with plural the first wire hole 351, or wherein at least one electrode part and at least one the first wire hole 351 overlapping just passable.In addition, the quantity of bus electrode 37 can be also two or three, and the plurality of bus electrode 37 can be spaced and extend along this second direction 52 along this first direction 51, or can be other kind of configuration mode.
Consult Fig. 4, Fig. 7, Fig. 8, Fig. 9, the first preferred embodiment of the manufacture method of solar cell of the present invention, comprising:
(1) step 61: provide this substrate 31, for example a silicon substrate.
(2) step 62: 311 places, front at this substrate 31 form this emitter layer 313, this step can utilize diffusion (diffusion) processing procedure to carry out.In addition, if desired on this emitter layer 313, form the unshowned anti-reflecting layer of a figure, can utilize the vacuum coating mode of for example PECVD to make.This vacuum coating mode can comprise the mode such as physical vapour deposition (PVD) (PVD), chemical vapour deposition (CVD) (CVD).But because this anti-reflecting layer is not imperative, therefore make the also non-steps necessary of the present invention of step of this anti-reflecting layer.
(3) step 63: form this passivation layer 33 at this back side 312, the present embodiment is to utilize the vacuum coating mode of for example PECVD to form this continuous passivation layer 33.
(4) step 64: form this perforate 35 on this passivation layer 33.This step is to utilize laser-induced thermal etching mode on this passivation layer 33, to form multiple connected perforation 350,353～356 (Fig. 9 illustrates with imaginary line), each perforation 350,353～356 is formed by a laser respectively, the part, position that burrows of each laser and its next laser is overlapping, and then is made up of this perforate 35 of extending and bending the plurality of perforation 350,353～356.Wherein the plurality of perforation comprises one second hole 354 of one first hole 353 of first formation, second formation, last first hole 355 of last formation and the second last hole 356 that penultimate forms, and other 350 of perforation are connected between perforation 353～356.This step is only connected respectively this first hole 353 and this last the first hole 355 with this second hole 354 and this second last hole 356.Illustrate further, this first hole 353 that this step forms and this last the first hole 355 are all only connected with a perforation, and each perforation beyond this first hole 353 and this last the first hole 355 is all connected with two perforation.
In this step, laser energy can run through the upper and lower surface of this passivation layer 33 and form this perforate 35, and then the position to should perforate 35 at the back side 312 of this substrate 31 is exposed.Certainly, this perforate 35 also can not run through, now can be by thering is the electrode slurry of a little penetration capacity, and further in the time of follow-up sintering, penetrate part passivation material remaining in this perforate 35 and contact with this back side 312.
(5) step 65: the front 311 at this substrate 31 forms this front electrode 32 contacting with this emitter layer 313.This step can utilize wire mark mode to be coated with electrocondution slurry on this front 311, and makes this electrocondution slurry curing molding and form this front electrode 32 via sintering.
(6) step 66: form this bus electrode 37 and this backplate 36 on this passivation layer 33.While forming this bus electrode 37, can utilize wire mark mode to be coated with electrocondution slurry on this passivation layer 33, and make this electrocondution slurry curing molding via sintering.While forming this backplate 36, also can utilize wire mark mode on this passivation layer 33, to be coated with electrocondution slurry (for example aluminium paste), electrocondution slurry can flow and inserts this perforate 35 and become this first conductive part 361, then makes this electrocondution slurry curing molding and can form this backplate 36 via sintering again.In sintering process, the material of the electrocondution slurry of this backplate 36 (Al) can contact via this perforate 35 back side 312 of this substrate 31, and mixes with the material (Si) of this substrate 31, and then can form this back of the body electric field structure 34 by sintering.
What remark additionally is, as long as manufacture method of the present invention can produce must battery structure just passable, the order of each step must not limit, for example step 65,66 order can be exchanged, and this bus electrode 37 of the making of step 66 also needn't limit with the order of this backplate 36, if first make this backplate 36, between this bus electrode 37 and the back side 312 of this substrate 31, can there be the material of this backplate 36.And above-mentioned each sintering step is generally together and carries out, to form this front electrode 32, this backplate 36 and this bus electrode 37 simultaneously.
In sum, by this perforate 35 of continuous extension and bending, replace the wire perforate at multiple intervals of conventional batteries, single perforate 35 entirety of the present embodiment only have two end points positions 357 (Fig. 4), therefore while utilizing laser to form this perforate 35, only may cause passivation layer 33 materials residual because single-shot laser energy is not enough at these two end points positions 357, passivation layer 33 materials at other positions of this perforate 35 can be removed by complete, therefore these perforate 35 entirety can present even and complete pore space structure haply, the residual quantity of passivation layer 33 materials seldom or does not almost have, thus, in the time that follow-up wire mark and sintering form this backplate 36, electrocondution slurry can positively be inserted this perforate 35 and contact the back side 312 of this substrate 31, to produce good collected current effect, and the thickness of back of the body electric field structure 34 that sintering is formed is enough, quality is good, make the plurality of back of the body electric field structure 34 its function of performance really, and then can promote the open circuit voltage of battery, short circuit current and photoelectric conversion efficiency.
Consult Figure 10, Figure 10 (a) is battery of the present invention, the conventional batteries (calling comparative example in the following text) that Figure 10 (b) is Fig. 1, Fig. 2.Figure 10 shows that the present invention is for comparative example, the thickness of the Al-Si alloy that the present invention forms in the end points position of perforate is thicker, therefore can form the back of the body electric field structure 34 that thickness is thick, quality is good, review the thin thickness of back of the body electric field structure 34 ' of comparative example and inhomogeneous, inferior quality.
Consult Figure 11, the second preferred embodiment of solar cell module of the present invention, the place different from this first preferred embodiment is the design of the perforate 35 of this solar cell 3.
The perforate 35 of the present embodiment is extended equally and is disposed at bendingly on this passivation layer 33, and comprise multiple along this first direction 51 extend and along spaced the first wire hole 351 of this second direction 52 and two extend and along spaced the second wire hole 352 of this first direction 51, these two the second wire holes 352 connect respectively the opposite end in the plurality of the first wire hole 351 along this second direction 52.Each position in the perforate 35 of the present embodiment, not taking wire hole as restriction, can be also other shapes.The two ends in each wire hole of the perforate 35 of the present embodiment are connected with other wire hole, and therefore generally speaking this perforate 35, does not exist any end points position, so also can reach effect of this first preferred embodiment.
Consult Figure 12, the 3rd preferred embodiment of solar cell module of the present invention, the places different from this first preferred embodiment are, this perforate 35 of the extension of the present embodiment and bending is spiral-shaped, and be rectangular coil, but implement time can be also spiral or other changes shapes of circular arc.
Consult Figure 13, the 4th preferred embodiment of solar cell module of the present invention, the places different from the 3rd preferred embodiment are, the solar cell 3 of the present embodiment also increases a bus electrode 37 is set, therefore the present embodiment comprises the bus electrode 37 of two intersections altogether, wherein a bus electrode 37 extends along this first direction 51, and overlapping with each position of extending along this second direction 52 of this perforate 35, another bus electrode 37 extends along this second direction 52, and overlapping with each position of extending along this first direction 51 of this perforate 35.
Supplementary notes, two bus electrodes 37 of this of the present embodiment are cross, but implement upper these two bus electrodes 37 not for example, so that parallel this first direction 51 and second direction 52, as necessary, also can be X font, and must not limit the angle of X font respectively.Or two bus electrodes 37 also can be non-intersect, for example two bus electrodes 37 all extend and are spaced along this second direction 52 along this first direction 51, or all extend and be spaced along this first direction 51 along this second direction 52.And the various collocation design of two bus electrodes 37 also can be applied in this first preferred embodiment and this second preferred embodiment.
Consult Figure 14, Figure 15, the 5th preferred embodiment of solar cell module of the present invention, the place different from this first preferred embodiment is mainly the design of perforate.The solar cell 3 of the present embodiment comprise multiple from inside to outside ring surround annular aperture 35 ', the area that the plurality of annular aperture 35 ' is surrounded is neither identical, and the plurality of annular aperture 35 ' to each other with surround area large surround surround area little.And independent and not connected separately each other between the plurality of annular aperture 35 '; Or, also local connection each other between the plurality of annular aperture 35 '.
Coordinate the design of the plurality of annular aperture 35 ', the quantity of the first conductive part 361 of the backplate 36 of the present embodiment is multiple, and contacts respectively the back side 312 and multiple back of the body electric field structure 34 of this substrate 31 via the plurality of annular aperture 35 '.And the plurality of the first conductive part 361 also contacts this bus electrode 37.
Consult Figure 16, the 6th preferred embodiment of solar cell module of the present invention, the places different from the 5th preferred embodiment are mainly, the present embodiment comprises that two are the bus electrodes 37 that X-shaped intersects.
When what bus electrode that above-described embodiment is mentioned 37 was cross and X-shaped intersects, be mainly that the perforate of surrounding in response to this kind of spirality and ring-type designs, like this and reach preferably electric current collection effect.
From the explanation of above each embodiment, spirit of the present invention is mainly the end points quantity of even eliminating perforate by reducing, while making to utilize laser processing procedure to form perforate, can positively the position corresponding to this perforate of passivation layer be removed, contribute to the quality of this back of the body electric field structure that promotes sintering formation, and motor current collecting effect and battery efficiency.Therefore, when enforcement, the extension mode at the shape of this perforate or each position of perforate and connected mode must not limit, as long as can reduce or eliminate the end points quantity of perforate, are exactly protection scope of the present invention.
Claims (10)
1. a solar cell, comprise: one comprise a front that is subject to light and a substrate with respect to this positive back side, one be disposed at the emitter layer at this front place, a front electrode that is disposed at this front place and contact this emitter layer, a passivation layer that is disposed at this back side place and a backplate being disposed on this passivation layer, it is characterized in that, this solar cell also comprises that one is extended and is disposed at bendingly the perforate on this passivation layer, and the projected area of this perforate on this back side accounts for 3%～12% of this backside area; This backplate contacts this back side via this perforate.
2. solar cell as claimed in claim 1, is characterized in that, this perforate is helical form.
3. solar cell as claimed in claim 1, it is characterized in that, this perforate comprises multiplely extends and along spaced the first wire hole of second direction and multiple second wire hole along this second direction extension of vertical this first direction along first direction, the plurality of the second wire hole is connected between the one end in wantonly two adjacent the first wire holes, and the plurality of the second wire hole does not connect to each other.
4. the solar cell as described in any one claim in claims 1 to 3, is characterized in that, the projected area of this perforate on this back side accounts for 4%～9% of this backside area.
5. a solar cell module, comprise: first sheet material being oppositely arranged and second sheet material and an encapsulation material between this first sheet material and this second sheet material, it is characterized in that, this solar cell module also comprises at least one solar cell as described in any one claim in claims 1 to 3, this solar cell is arranged between this first sheet material and this second sheet material, and this encapsulation material contacts this solar cell.
6. a manufacture method for solar cell, comprising:
A substrate is provided, and this substrate comprises that one is subject to the positive of light and one with respect to this positive back side;
Form an emitter layer in this front;
Form a passivation layer at this back side;
Form a front electrode contacting with this emitter layer in this front; It is characterized in that, the manufacture method of this solar cell also comprises:
On this passivation layer, form a perforate, this step utilizes laser to form multiple connected perforation continuously each other, formed this perforate of extending and bending by the plurality of perforation, wherein the plurality of perforation comprises last first hole of second hole, last formation of first hole of first formation, second formation and the second last hole that penultimate forms, and this first hole and this last the first hole are only connected with this second hole and this second last hole respectively, the projected area of this perforate on this back side accounts for 3%～12% of this backside area; And
On this passivation layer, form a backplate, and make this backplate contact this back side via this perforate.
7. the manufacture method of solar cell as claimed in claim 6, is characterized in that, the projected area of this perforate on this back side accounts for 4%～9% of this backside area.
8. a solar cell, comprise: one comprises front and a substrate with respect to this positive back side that is subject to light, one is disposed at the emitter layer at this front place, a front electrode that is disposed at this front place and contacts this emitter layer, one is disposed at the passivation layer at this back side place, an and backplate being disposed on this passivation layer, it is characterized in that, this solar cell also comprises multiple annular aperture that are disposed on this passivation layer and encircle from inside to outside encirclement, the area that the plurality of annular aperture is surrounded is neither identical, and the plurality of annular aperture surrounds the perforate of encirclement area circlet shape to surround the large annular aperture of area to each other, this backplate comprises multiple the first conductive parts that contact respectively this back side via the plurality of annular aperture.
9. solar cell as claimed in claim 8, is characterized in that, the projected area of the plurality of annular aperture on this back side accounts for 3%～12% of this backside area.
10. a solar cell module, comprise: first sheet material being oppositely arranged and second sheet material and an encapsulation material between this first sheet material and this second sheet material, it is characterized in that, this solar cell module also comprises at least one solar cell as claimed in claim 8 or 9, this solar cell is arranged between this first sheet material and this second sheet material, and this encapsulation material contacts this solar cell.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW102101621A TWI529954B (en) | 2013-01-16 | 2013-01-16 | Solar cell, module comprising the same and method of manufacturing the same |
| TW102101621 | 2013-01-16 |
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| Publication Number | Publication Date |
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| CN103928537A true CN103928537A (en) | 2014-07-16 |
| CN103928537B CN103928537B (en) | 2017-04-26 |
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| CN201310067467.3A Expired - Fee Related CN103928537B (en) | 2013-01-16 | 2013-03-04 | Solar cell, module thereof and manufacturing method thereof |
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| TW (1) | TWI529954B (en) |
Cited By (4)
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| CN105810769A (en) * | 2016-05-24 | 2016-07-27 | 晋能清洁能源科技有限公司 | Laser grooving structure of back-passivated solar cell |
| CN107527957A (en) * | 2016-06-20 | 2017-12-29 | 茂迪股份有限公司 | Solar cell receiving light on one side, manufacturing method thereof and solar cell module |
| CN108336161A (en) * | 2018-03-29 | 2018-07-27 | 通威太阳能（成都）有限公司 | A kind of solar cell and preparation method thereof of passivating back laser slotting |
| CN109830555A (en) * | 2018-12-24 | 2019-05-31 | 北京铂阳顶荣光伏科技有限公司 | Solar panel and preparation method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI558056B (en) | 2015-12-04 | 2016-11-11 | 財團法人工業技術研究院 | Solar cell structure for wireless charging |
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| CN109830555A (en) * | 2018-12-24 | 2019-05-31 | 北京铂阳顶荣光伏科技有限公司 | Solar panel and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103928537B (en) | 2017-04-26 |
| TWI529954B (en) | 2016-04-11 |
| TW201431101A (en) | 2014-08-01 |
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