CN103928560A - Pixel structure of radiation detector - Google Patents
Pixel structure of radiation detector Download PDFInfo
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- CN103928560A CN103928560A CN201410177611.3A CN201410177611A CN103928560A CN 103928560 A CN103928560 A CN 103928560A CN 201410177611 A CN201410177611 A CN 201410177611A CN 103928560 A CN103928560 A CN 103928560A
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- 230000005855 radiation Effects 0.000 title claims abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 35
- 239000010703 silicon Substances 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000012535 impurity Substances 0.000 claims abstract description 8
- 238000002955 isolation Methods 0.000 claims description 23
- 238000010276 construction Methods 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 abstract description 16
- 238000010586 diagram Methods 0.000 description 7
- 230000001413 cellular effect Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 238000011160 research Methods 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention relates to a pixel structure of a radiation detector. The pixel structure of the radiation detector is applied in a particle detector and the radiation detector. Sensor charge collecting electrodes are three-dimensional electrodes formed by heavy doping silicon grooves, pixel electrodes are separated by silicon deep groove structures, and the sensor charge collecting electrodes and the pixel electrodes are both separated through the deep groove structures and are equal in depth, impurity types of the sensor charge collecting electrodes and substrate silicon are opposite, the collecting electrodes are in the P type, and the substrate silicon is in the N type; or the collecting electrodes are in the N type, and the substrate silicon is in the P type; the impurity concentration of the collecting electrodes is 6-7 magnitude orders higher than the impurity concentration of the substrate silicon. By means of the pixel structure of the radiation detector, the collection efficiency of pixels on charges is effectively improved, the charge collecting time is shortened, between-pixel crosstalk noise is shielded, the sensor reversed bias voltage is reduced, and the pixel-level power dissipation is reduced.
Description
Technical field
The present invention relates to a kind of radiation detector dot structure being applied in particle detector, radiation detector.
Background technology
For high-energy physics experiment construction a new generation LHC needs the particle detector of excellent performance to be used in conjunction with it, novel particle track detector is the focus and emphasis device of current research.Silicon pixel detector is divided into mixed type (Hybrid) and the large class of monolithic integrated form (Monolithic) two.According to the difference of manufacturing process, monolithic integrated form is divided into the three types such as SOI, MAPS and DEPFET.The development of monolithic integrated form silicon pixel detector is the improvement for hybrid detector being carried out to two aspects: reduce amount and reduce cost.In high-energy physics experiment, the requirement that reduces amount becomes important along with preparing of following linear collider ILC, is all very important and reduce cost to all application.
Radiation detector is that the non equilibrium carrier by collecting the silicon atom generation ionization reaction generation around of charged particle and radiating particle incident path detects charged particle.The key parameter of weighing its performance comprises resolution, signal to noise ratio, reading speed and capability of resistance to radiation etc.For further improving signal to noise ratio and the capability of resistance to radiation of radiation detector, and improve charge collection efficiency and acquisition time, need to study the structure such as element sensor and transfer tube, charge-trapping mechanism and performance impact are provided to improvement project.
The people such as S.I.Parkera and C.J.Kenneya proposed three-dimensional (3D) electrod-array solid-state radiation detector (A proposed new architecture for solid-state radiation detectors.Nuclear Instruments and Methods in Physics Research Section A:Accelerators in 1997, Spectrometers, Detectors and Associated Equipment, 1997,395 (3): 328-343.), this whole device silicon of detector charge collection electrode break-through tagma.With respect to common cmos sensor, this 3D electrode structure can reduce rays excite electron hole diffusion length and approximately order of magnitude of acquisition time, and has reduced the reverse biased that device epitaxial layers exhausts completely.
The people such as Andrea Castoldi adopt dark P Impurity injection to form exclusion region (Electron confinement in drift detectors by means of " channel-stop " implants:characterization at high signal charges.Nuclear Science in silicon drifting detector, IEEE Transactions on, 1996,43 (6): 3201-3206.), spread along with direction of an electric field in the region of specifying to limit particle excitated electron hole pair, thereby reach pixel isolation, reduce crosstalk noise between pixel.But this structure needs multiple spot control of Electric potentials, be difficult to apply in cmos pixel transducer.
The people such as Rhodes H E. study discovery (Image sensor using deep trench isolation:European Patent EP1691418.2008-11-26.), along with image sensor pixel size reduction, between pixel, crosstalk more and more serious, P trap isolation effect is no longer obvious, therefore adopt deep plough groove etched combination p type impurity to inject and form pixel isolation, and channel bottom reaches P+ substrate.The method can effectively be cut off between pixel the electric charge approach of crosstalking.But this structure has only been improved particle excitated electric charge crosstalking between pixel, but not from improving in essence the collection efficiency of pixel to electric charge.
Summary of the invention
The object of this invention is to provide the radiation detector dot structure of the collection efficiency of a kind of effective raising pixel to electric charge.
The object of the present invention is achieved like this:
Transducer electric charge passive electrode is that three-diemsnional electrode is made up of heavily doped silicon groove, and each pixel electrode is kept apart by silicon deep groove structure, and transducer electric charge passive electrode and pixel isolation are all deep groove structure, and equal depth.
Transducer electric charge passive electrode is contrary with substrate silicon dopant type, and passive electrode is P type, and substrate silicon is N-type; Passive electrode is N-type, and substrate silicon is P type; In passive electrode, impurity concentration is than large 6～7 orders of magnitude of substrate silicon concentration.
Groove isolation construction silicon is heavy doping.
Groove isolation construction is drawn by electrode, and as negative electrode or the positive electrode of transducer, the electrode contrary with the electrode of transducer all drawn at SOI CMOS upper surface, by each pixel isolation separately.
Beneficial effect of the present invention is:
The present invention proposes a kind of radiation detector dot structure, effectively improve the collection efficiency of pixel to electric charge, improved charge collection time, shielded crosstalk noise between pixel, and reduced transducer reversed bias voltage, and Pixel-level power consumption.
Brief description of the drawings
Fig. 1 is the three-dimensional structure cell of a kind of existing SOI CMOS3 × 3 pixel.
Fig. 2 is the two-dimentional cellular cross section structure of a kind of existing SOI CMOS3 × 3 pixel.
Fig. 3 is a kind of three-dimensional structure cell of 3 × 3 pixels of existing three-diemsnional electrode.
Fig. 4 is the two-dimentional cellular cross section structure that a kind of 3 × 3 pixels of existing three-diemsnional electrode add.
Fig. 5 is the three-dimensional structure cell of SOI of the present invention CMOS3 × 3 pixel.
Fig. 6 is the two-dimentional cellular cross section structure of SOI of the present invention CMOS3 × 3 pixel.
Fig. 7 is the two-dimentional cellular cross section structure that a kind of existing SOI CMOS3 × 3 pixel adds reverse biased.
Fig. 8 is the two-dimentional cellular cross section structure that a kind of 3 × 3 pixels of existing three-diemsnional electrode add reverse biased.
Fig. 9 is the two-dimentional cellular cross section structure that a kind of SOI of the present invention CMOS3 × 3 pixel adds reverse biased.
Figure 10 is radiation detector structure of the present invention and existing SOI cmos pixel transducer, has under 3 × 3 pixels of element sensor of three-diemsnional electrode the charge-trapping comparison diagram of object pixel electrode under minimum ionization particle.
3 × 3 pixels of the element sensor of Figure 11 radiation detector dot structure of the present invention and existing SOI cmos pixel radiation detector, existing three-diemsnional electrode, the charge-trapping comparison diagram of each pixel electrode under minimum ionization particle.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described further.
According to 3 documents to some shortcomings that exist in the research of pixel and isolation technology thereof, a kind of radiation detector dot structure has been proposed, effectively improve the collection efficiency of pixel to electric charge, improve charge collection time, shield crosstalk noise between pixel, and reduced transducer reversed bias voltage, and Pixel-level power consumption.
Technical scheme of the present invention is as follows:
Radiation detector dot structure.Comprise that pixel electrode is that three-diemsnional electrode is made up of heavy doping P (or N) type silicon trench, and each pixel is kept apart by N (or P) type silicon deep groove structure.Transducer electric charge passive electrode and pixel isolation are all deep groove structure, and equal depth.
Transducer electric charge passive electrode is contrary with substrate silicon dopant type, and passive electrode is P type (or N-type), and substrate silicon is N-type (or P type), and in passive electrode impurity concentration than large 6～7 orders of magnitude of substrate silicon concentration.
Groove isolation construction silicon is heavy doping, and for ensureing that transducer is when reverse-biased, groove isolation construction is not exhausted completely by space charge region.
This groove isolation construction is drawn by electrode, as the moon (or sun) electrode of transducer, all draw at SOI CMOS upper surface with sun (or cloudy) electrode, and this moon (or sun) electrode by each pixel isolation separately.
This patent structure is owing to adopting deep trench electrode and deep trench isolation structure, and both parallel placements, can make full use of space, silicon tagma, improve the collection efficiency of transducer to particle excitated electric charge, and can effectively shield electric charge crosstalk noise between pixel, improve object pixel charge-trapping percentage.Top is transferred to by bottom in the back of this outer sensor, not only reduces sensor package technology difficulty, and can be with electronic circuit power supply compatibility, avoids additional power supply to supply with, and reduces transducer overall power.
Fig. 1 and Fig. 2 have provided three-dimensional structure cell and the two-dimensional section schematic diagram (be the better Sensor section that shows, top layer silicon structure does not show) thereof of a kind of existing SOI CMOS3 × 3 element sensor.As can be seen from Figure, this dot structure is by silicon tagma 101/201, shallow P injection region 102/202, and passive electrode 103/203 and back electrode 104/204 form.Fig. 3 and Fig. 4 have provided a kind of three-dimensional structure cell and two-dimensional section schematic diagram thereof of 3 × 3 element sensors of existing three-diemsnional electrode.Compare Fig. 1 and Fig. 2, the passive electrode 303/403 in this three-diemsnional electrode structure is formed by groove structure.Fig. 5 and Fig. 6 have provided three-dimensional structure cell and the two-dimensional section schematic diagram thereof of SOI of the present invention CMOS3 × 3 pixelated radiation detector pixel.Compare first two element sensor, this structure combines N-type deep trench isolation structure 505/605, and this groove structure is the negative electrode in pixel diode, formed by N-type silicon, and by each pixel isolation separately.
Radiation detector dot structure in the present invention, owing to adopting deep trench electrode and deep trench isolation structure, and both parallel placements, can make full use of space, silicon tagma, improve the collection efficiency of transducer to particle excitated electric charge, and can effectively shield electric charge crosstalk noise between pixel, improve object pixel charge-trapping percentage.Top is transferred to by bottom in the back of this outer sensor, not only reduces sensor package technology difficulty, and can be with electronic circuit power supply compatibility, avoids additional power supply to supply with, and reduces transducer overall power.Fig. 7, Fig. 8 and Fig. 9 have provided SOI of the present invention CMOS3 × 3 pixelated radiation detector with existing structure distribution map of the electric field.Figure 10 has provided the charge-trapping comparison diagram of object pixel electrode under three's minimum ionization particle, and Figure 11 has provided the charge-trapping comparison diagram of each pixel electrode under three's minimum ionization particle.Visible, radiation detector dot structure of the present invention can effectively improve charge collection efficiency, improves crosstalk noise between pixel.
Above-mentioned for the present invention especially exemplified by embodiment, not in order to limit the present invention.Deep trench isolation radiation detector dot structure provided by the invention is equally applicable to Bulk CMOS element sensor.Equally, can be applied in all element sensors, such as element sensor, particle detector, radiation detector and their variant.Not departing from the spirit and scope of the invention, can do a little adjustment and optimization, protection scope of the present invention is as the criterion with claim.
Claims (4)
1. a radiation detector dot structure, transducer electric charge passive electrode is that three-diemsnional electrode is made up of heavily doped silicon groove, each pixel electrode is kept apart by silicon deep groove structure, it is characterized in that: transducer electric charge passive electrode and pixel isolation are all deep groove structure, and equal depth.
2. a kind of radiation detector dot structure according to claim 1, is characterized in that: transducer electric charge passive electrode is contrary with substrate silicon dopant type, passive electrode is P type, and substrate silicon is N-type; Passive electrode is N-type, and substrate silicon is P type; In passive electrode, impurity concentration is than large 6～7 orders of magnitude of substrate silicon concentration.
3. a kind of radiation detector dot structure according to claim 1, is characterized in that: groove isolation construction silicon is heavy doping.
4. a kind of radiation detector dot structure according to claim 1, it is characterized in that: groove isolation construction is drawn by electrode, as negative electrode or the positive electrode of transducer, the electrode contrary with the electrode of transducer all drawn at SOI CMOS upper surface, by each pixel isolation separately.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410177611.3A CN103928560A (en) | 2014-04-29 | 2014-04-29 | Pixel structure of radiation detector |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410177611.3A CN103928560A (en) | 2014-04-29 | 2014-04-29 | Pixel structure of radiation detector |
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| CN103928560A true CN103928560A (en) | 2014-07-16 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104134676A (en) * | 2014-07-23 | 2014-11-05 | 中国航天科技集团公司第九研究院第七七一研究所 | Rapid charge transfer pixel structure based on radiation environment application |
| CN108573989A (en) * | 2018-04-28 | 2018-09-25 | 中国科学院半导体研究所 | Silicon substrate avalanche photodetector array and preparation method thereof |
| CN109904272A (en) * | 2019-01-23 | 2019-06-18 | 杭州电子科技大学 | A kind of pixel detector of high-conversion-gain and low crosstalk |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5757007A (en) * | 1997-04-04 | 1998-05-26 | Eg&G Instruments, Inc. | Segmented electrode radiation detector |
| US20090244514A1 (en) * | 2008-03-26 | 2009-10-01 | Samsung Electronics Co., Ltd. | Distance measuring sensors including vertical photogate and three-dimensional color image sensors including distance measuring sensors |
| CN102695967A (en) * | 2009-10-19 | 2012-09-26 | 布鲁克哈文科学协会有限责任公司 | 3D-trench electrode detectors |
-
2014
- 2014-04-29 CN CN201410177611.3A patent/CN103928560A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5757007A (en) * | 1997-04-04 | 1998-05-26 | Eg&G Instruments, Inc. | Segmented electrode radiation detector |
| US20090244514A1 (en) * | 2008-03-26 | 2009-10-01 | Samsung Electronics Co., Ltd. | Distance measuring sensors including vertical photogate and three-dimensional color image sensors including distance measuring sensors |
| CN102695967A (en) * | 2009-10-19 | 2012-09-26 | 布鲁克哈文科学协会有限责任公司 | 3D-trench electrode detectors |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104134676A (en) * | 2014-07-23 | 2014-11-05 | 中国航天科技集团公司第九研究院第七七一研究所 | Rapid charge transfer pixel structure based on radiation environment application |
| CN108573989A (en) * | 2018-04-28 | 2018-09-25 | 中国科学院半导体研究所 | Silicon substrate avalanche photodetector array and preparation method thereof |
| CN108573989B (en) * | 2018-04-28 | 2021-09-14 | 中国科学院半导体研究所 | Silicon-based avalanche photodetector array and manufacturing method thereof |
| CN109904272A (en) * | 2019-01-23 | 2019-06-18 | 杭州电子科技大学 | A kind of pixel detector of high-conversion-gain and low crosstalk |
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Application publication date: 20140716 |