CN104009149A - Semiconductor refrigeration device and manufacturing method thereof - Google Patents
Semiconductor refrigeration device and manufacturing method thereof Download PDFInfo
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- CN104009149A CN104009149A CN201410255535.3A CN201410255535A CN104009149A CN 104009149 A CN104009149 A CN 104009149A CN 201410255535 A CN201410255535 A CN 201410255535A CN 104009149 A CN104009149 A CN 104009149A
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Abstract
The invention discloses a semiconductor refrigeration device and a manufacturing method thereof. The semiconductor refrigeration device comprises a semiconductor chilling plate. The semiconductor chilling plate is formed by an upper substrate, a lower substrate and multiple sets of P-N junction semiconductors located between the upper substrate and the lower substrate. The gap between the upper substrate and the lower substrate is filled with an aerogel layer with a thermal insulation effect. Compared with an existing semiconductor refrigeration device, the semiconductor refrigeration device is made of novel silicon dioxide aerogel materials and has the advantages of being low in weight, capable of not occupying the area additionally, high in anti-overload capacity and high in stability; refrigeration efficiency of the semiconductor refrigeration device under unit energy consumption is improved by more than 10%, so that the semiconductor refrigeration device is especially suitable for refrigeration equipment with low power and strict refrigeration requirements; original production processes can keep unchanged by only adding one filling procedure, production equipment does not need to be redesigned, and improvement cost is low.
Description
Technical field
The present invention relates to a kind of semiconductor cooling device, relate in particular to a kind of semiconductor cooling device and manufacture method thereof.
Background technology
Semiconductor refrigerating is electric current transducing type refrigeration modes, claim again thermoelectric cooling, can freeze, can heat again, by the control to input current, can realize the high accuracy control to temperature, process of refrigerastion, without any need for cold-producing medium, does not have rotating parts, noiselessness, friction, is widely used in weaponry, medical experiment instrument, special test equipment and daily life aspect.
The key that semiconductor refrigerating is realized is semiconductor chilling plate.Semiconductor chilling plate is to utilize extraordinary semi-conducting material to form P-N knot, forms thermocouple pair, in the time of logical direct current, produces paltie effect, realizes transfer of heat, one end heat absorption, other end heat release.
Under rated power, improve the refrigerating efficiency of semiconductor chilling plate, mainly contain two aspect measures: the one, select the high and resistant to elevated temperatures semi-conducting material of figure of merit; The 2nd, the heat radiation and the provision for thermal insulation that improve cooling piece.Extensively the semiconductor refrigeration material of practicality is the ternary solid solution alloy taking bismuth telluride as body at present.
The transfer of heat that independent a pair of unit thermocouple produces is little, only there is 0.117W-0.7W, in actual use, often each, units in series is got up, form one group of thermocouple (one-level pile), both sides clamp with potsherd, make the semiconductor chilling plate of certain size.It is this kind of structure that Chinese patent CN202734342U name is called " semiconductor cooler ".Due to the very thin thickness of this semiconductor chilling plate, dispel the heat in inadequate situation in the external world, the heat that when cooling piece work, hot junction produces is easy to be back to cold junction by cooling piece itself, has reduced the refrigerating efficiency of cooling piece.
Domestic literature mainly concentrates in the heat-sinking capability that how to improve the cold and hot two ends of cooling piece.Chinese patent CN202792679U name is called semiconductor cooling device, adopt the efficiency that installs metal heat-conducting piece in cooling piece both sides additional and improved single cooling piece by the fixing mode of insulating screw, but the volume and weight that this has also increased cooling piece assembly simultaneously greatly, is suitable for the insensitive product of volume weight requirement.
Chinese patent CN103682074A name is called " high-termal conductivity metallic circuit semiconductor chilling plate and processing method thereof " by adopting class to bore the metal substrate of carbon plated film, replace traditional ceramic substrate, thereby improve cooling piece two ends radiating efficiency, which has also increased the quality of cooling piece to a certain extent, complex manufacturing simultaneously, cost is higher.
Summary of the invention
Object of the present invention is just to overcome the deficiency of existing semiconductor chilling plate air heat insulation heat-insulating property, provide one to change hardly original cooling piece quality and volume, can effectively improve again semiconductor cooling device and the manufacture method of refrigerating efficiency under unit power consumption simultaneously.
To achieve these goals, the technical solution used in the present invention is: a kind of semiconductor cooling device, comprise semiconductor chilling plate, described semiconductor chilling plate is by upper substrate and infrabasal plate, and many groups P-N pn junction p n between upper substrate and infrabasal plate composition, the gap of described upper substrate and infrabasal plate is filled with the aerogel layer with partiting thermal insulation effect;
As preferably, described aerogel layer is the aerosil adding after glass fibre strengthens;
As preferably, described P-N pn junction p n is bismuth telluride P-N pn junction p n.
A kind of semiconductor cooling device manufacture method, method step is as follows,
A. selection, selects technical grade semiconductor chilling plate to comprise upper substrate, infrabasal plate, bismuth telluride P-N pn junction p n, and the aerosil of glass fibre enhancing;
B. refrigerator inside is vacuumized, the aerosil after employing glass fibre strengthens carries out filling, allows aerogel material fill full refrigerator inside;
C. after gel, refrigerator is carried out to the hydrophobization processing of aeroge;
D. carry out again solvent exchange;
E. finally put into supercritical drying equipment and be dried processing;
F. dry rear taking-up of refrigerator, carries out edge sealing processing to it;
G. test.
Compared with prior art, the invention has the advantages that:
(1) the present invention adopts novel silica aerogel material, has advantages of that quality gently, does not additionally take volume, anti-overload ability is strong, stability is high.
(2) the present invention compares the semiconductor chilling plate of not filling this material, and the refrigerating efficiency under its unit power consumption improves more than 10%, is specially adapted at power lowlyer, and refrigeration requires the refrigeration plant under harsher.
(3) the present invention is based on technical grade semiconductor chilling plate, only increase filling operation together, original production technology can remain unchanged, and produces equipment without redesigning, and improving cost is low.
(4) the present invention is applied to semiconductor refrigerating equipment, in the time that 25 DEG C of ambient temperatures are less than 80W with total power consumption, the actual temperature difference of the cold and hot end of monolithic semiconductor cooling piece can improve 8.5 DEG C, controlled to-20 DEG C (cold junction temperature-25 DEG C) to its cryogenic temperature of the payload in 5L volume, and keep long time continuous working.
Brief description of the drawings
Fig. 1 is the cutaway view of structural front view of the present invention;
Fig. 2 is the cutaway view of structure vertical view of the present invention;
The heat insulation processing technological flow figure of Fig. 3 cooling piece of the present invention.
In figure: 1, P-N pn junction p n; 2, aerogel layer; 3, upper substrate; 4, infrabasal plate.
Embodiment
Embodiment: the invention will be further described below,
In experimentation, we find, in the time of refrigerating system steady operation, the cold draining amount of cooling piece self accounts for 30% left and right of total cold draining amount.And by retrieving and consult related data, the current domestic example invention that can effectively improve semiconductor chilling plate self heat-proof quality that lacks.The present invention is the effective way of the refrigerating efficiency based on by under increase cooling piece internal thermal resistance and then raising unit power just.
A kind of semiconductor cooling device, as Fig. 1, shown in Fig. 2, comprise semiconductor chilling plate, described semiconductor chilling plate is by upper substrate 3 and infrabasal plate 4, and many groups P-N pn junction p n 1 between upper substrate 3 and infrabasal plate 4 forms, described P-N pn junction p n 1 is bismuth telluride P-N pn junction p n, described upper substrate 3 is filled with the aerogel layer 2 with partiting thermal insulation effect with the gap of infrabasal plate 4, described aerogel layer 2 is for adding the aerosil after glass fibre strengthens, the technology that the aerosil that glass fibre strengthens is known to the skilled person, the application does not protect its proportioning, glass fibre only plays the effect of gaining in strength.
A kind of semiconductor cooling device manufacture method, as shown in Figure 3, is used the connecting line of refrigerator after adhesive tape protection, puts into the container of being furnished with the aerosil after glass fibre strengthens, makes glue be full of whole thermoelectric refrigerating unit.After glue gel, refrigerator is placed in to hydrophobization reagent and carries out the hydrophobization processing of aeroge, be placed in solvent and carry out solvent exchange, finally put into supercritical drying equipment and be dried processing.After refrigerator takes out, after apparent protection, to using Kapton Tape and silicon rubber to carry out edge sealing processing to it.
Contrast test result
Test adopts the closed box of 5L volume, built-in 2L payload (taking water as example).Setting voltage 12.0V, remains unchanged.25 DEG C of ambient temperatures.
Technical grade semiconductor chilling plate test result, as shown in table 1;
Table 1
Test result of the present invention, as shown in table 2:
Table 2
Silica aerogel material performance parameter, as shown in table 3;
Table 3
Above a kind of semiconductor cooling device provided by the present invention and manufacture method thereof are carried out to detailed introduction, applied specific case herein principle of the present invention and execution mode are set forth, the explanation of above embodiment is just for helping to understand method of the present invention and core concept thereof; Simultaneously, for one of ordinary skill in the art, according to thought of the present invention, all will change in specific embodiments and applications, to be possible to change of the present invention and improvement, and can not exceed design and the scope of accessory claim defined, in sum, this description should not be construed as limitation of the present invention.
Claims (4)
1. a semiconductor cooling device, comprise semiconductor chilling plate, it is characterized in that: described semiconductor chilling plate is by upper substrate and infrabasal plate, and many groups P-N pn junction p n between upper substrate and infrabasal plate composition, the gap of described upper substrate and infrabasal plate is filled with the aerogel layer with partiting thermal insulation effect.
2. a kind of semiconductor cooling device according to claim 1, is characterized in that: described aerogel layer is the aerosil adding after glass fibre strengthens.
3. a kind of semiconductor cooling device according to claim 1, is characterized in that: described P-N pn junction p n is bismuth telluride P-N pn junction p n.
4. a semiconductor cooling device manufacture method, is characterized in that: method step is as follows,
A. selection, selects technical grade semiconductor chilling plate to comprise upper substrate, infrabasal plate, bismuth telluride P-N pn junction p n, and the aerosil of glass fibre enhancing;
B. refrigerator inside is vacuumized, the aerosil after employing glass fibre strengthens carries out filling, allows aerogel material fill full refrigerator inside;
C. after gel, refrigerator is carried out to the hydrophobization processing of aeroge;
D. carry out again solvent exchange;
E. finally put into supercritical drying equipment and be dried processing;
F. dry rear taking-up of refrigerator, carries out edge sealing processing to it;
G. test.
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104851965A (en) * | 2015-03-29 | 2015-08-19 | 四川师范大学 | New method using bismuth telluride-doped carbon aerogel to prepare thermoelectric material |
CN105222392A (en) * | 2015-10-16 | 2016-01-06 | 西南技术物理研究所 | The raising method of the overload-resistant impact capacity of semiconductor cooler |
CN110246955A (en) * | 2019-05-24 | 2019-09-17 | 航天特种材料及工艺技术研究所 | A kind of lower thermal conductivity thermo-electric device and preparation method thereof |
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US6509520B1 (en) * | 1995-06-07 | 2003-01-21 | Raytheon Company | High strength composite thermoelectric cooler and method for making same |
JP2009141079A (en) * | 2007-12-05 | 2009-06-25 | Jr Higashi Nippon Consultants Kk | Thermoelectric element module |
CN102057512A (en) * | 2008-04-11 | 2011-05-11 | 米兰-比可卡大学 | Seebeck/peltier bidirectional thermo- electric conversion device using nanowires of conductor or semiconductor material |
CN103396081A (en) * | 2013-07-30 | 2013-11-20 | 湖北三江航天红阳机电有限公司 | Preparation method of hydrophobic type SiO2 nanometer aerogel heat-insulating material |
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2014
- 2014-06-10 CN CN201410255535.3A patent/CN104009149A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6509520B1 (en) * | 1995-06-07 | 2003-01-21 | Raytheon Company | High strength composite thermoelectric cooler and method for making same |
JP2009141079A (en) * | 2007-12-05 | 2009-06-25 | Jr Higashi Nippon Consultants Kk | Thermoelectric element module |
CN102057512A (en) * | 2008-04-11 | 2011-05-11 | 米兰-比可卡大学 | Seebeck/peltier bidirectional thermo- electric conversion device using nanowires of conductor or semiconductor material |
CN103396081A (en) * | 2013-07-30 | 2013-11-20 | 湖北三江航天红阳机电有限公司 | Preparation method of hydrophobic type SiO2 nanometer aerogel heat-insulating material |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104851965A (en) * | 2015-03-29 | 2015-08-19 | 四川师范大学 | New method using bismuth telluride-doped carbon aerogel to prepare thermoelectric material |
CN105222392A (en) * | 2015-10-16 | 2016-01-06 | 西南技术物理研究所 | The raising method of the overload-resistant impact capacity of semiconductor cooler |
CN110246955A (en) * | 2019-05-24 | 2019-09-17 | 航天特种材料及工艺技术研究所 | A kind of lower thermal conductivity thermo-electric device and preparation method thereof |
CN110246955B (en) * | 2019-05-24 | 2022-11-11 | 航天特种材料及工艺技术研究所 | Low-thermal-conductivity thermoelectric device and preparation method thereof |
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Application publication date: 20140827 |