CN104078603A - Organic light-emitting diode and preparation method thereof - Google Patents
Organic light-emitting diode and preparation method thereof Download PDFInfo
- Publication number
- CN104078603A CN104078603A CN201310109253.8A CN201310109253A CN104078603A CN 104078603 A CN104078603 A CN 104078603A CN 201310109253 A CN201310109253 A CN 201310109253A CN 104078603 A CN104078603 A CN 104078603A
- Authority
- CN
- China
- Prior art keywords
- layer
- evaporation
- oxide
- bis
- iron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/865—Intermediate layers comprising a mixture of materials of the adjoining active layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
- H10K50/131—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/18—Carrier blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
Abstract
An organic light-emitting diode comprises a positive pole, a hole injection layer, a first hole transport layer, a first light-emitting layer, a first electron transport layer, a charge generation layer, a second hole transport layer, a second light-emitting layer, a second electron transport layer, an electron injection layer and a negative pole which are stacked in sequence. The charge generation layer comprises an n-type layer and a p-type layer. An n-type layer material comprises a metal oxide and a lithium salt doped in the metal oxide, a p-type material comprises a lanthanide oxide, an iron compound doped in the lanthanide oxide and a hole transport material, and the organic light-emitting diode is high in light-emitting efficiency. The invention further provides a preparation method for preparing the organic light-emitting diode.
Description
Technical field
The present invention relates to a kind of organic electroluminescence device and preparation method thereof.
Background technology
The principle of luminosity of organic electroluminescence device is based under the effect of extra electric field, electronics is injected into organic lowest unocccupied molecular orbital (LUMO) from negative electrode, and hole is injected into organic highest occupied molecular orbital (HOMO) from anode.Electronics and hole meet at luminescent layer, compound, form exciton, exciton moves under electric field action, and energy is passed to luminescent material, and excitation electron is from ground state transition to excitation state, excited energy, by Radiation-induced deactivation, produces photon, discharges luminous energy.But the luminous efficiency of organic electroluminescence device is lower at present.
Summary of the invention
Based on this, be necessary to provide organic electroluminescence device that a kind of luminous efficiency is higher and preparation method thereof.
A kind of organic electroluminescence device, comprise the anode, hole injection layer, the first hole transmission layer, the first luminescent layer, the first electron transfer layer, charge generation layer, the second hole transmission layer, the second luminescent layer, the second electron transfer layer, electron injecting layer and the negative electrode that stack gradually, described charge generation layer comprises N-shaped layer and p-type layer, and described N-shaped layer material comprises metal oxide and is entrained in the lithium salts in metal oxide, wherein, metal oxide is selected from molybdenum trioxide, in tungstic acid and vanadic oxide at least one, lithium salts is selected from lithium carbonate, lithium fluoride, in lithia and lithium chloride at least one, the mass ratio of described lithium salts and metal oxide is 1:5～1:2, described p-type material comprises lanthanide oxide and is entrained in compound and the hole mobile material of the iron in described lanthanide oxide, described lanthanide oxide is selected from titanium dioxide praseodymium, praseodymium sesquioxide, at least one in three ytterbium oxides and samarium oxide, the compound of described iron is selected from iron chloride, at least one in ferric bromide and iron sulfide, described hole mobile material is selected from 1, 1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, 4, 4 ', 4 " tri-(carbazole-9-yl) triphenylamine and N, N '-(1-naphthyl)-N, N '-diphenyl-4, at least one in 4 '-benzidine, the compound of described iron and the mass ratio of lanthanide oxide are 1:100～1:20, the mass ratio of described hole mobile material and lanthanide oxide is 1:20～1:5.
The thickness of described N-shaped layer is 5nm～60nm, and the thickness of described p-type layer is 10nm～30nm.
The material of described the first luminescent layer and described the second luminescent layer is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans, 9,10-bis--β-naphthylene anthracene, 4, at least one in 4 '-bis-(9-ethyl-3-carbazole vinyl)-1,1 '-biphenyl and oxine aluminium.
The material of described the first hole transmission layer and described the second hole transmission layer is selected from 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, 4,4 ', 4 " tri-(carbazole-9-yl) triphenylamine and N; N '-(1-naphthyl)-N, N '-diphenyl-4, at least one in 4 '-benzidine.
The material of described the first electron transfer layer and described the second electron transfer layer is selected from 4,7-diphenyl-1,10-phenanthroline, 1,2, at least one in 4-triazole derivative and N-aryl benzimidazole.
A preparation method for organic electroluminescence device, comprises the following steps:
Prepare hole injection layer, the first hole transmission layer, the first luminescent layer and the first electron transfer layer at anode surface successively evaporation;
Prepare charge generation layer at described the first electron transfer layer surface evaporation, described charge generation layer comprises N-shaped layer and p-type layer, and described N-shaped layer material comprises metal oxide and is entrained in the lithium salts in metal oxide, wherein, metal oxide is selected from molybdenum trioxide, in tungstic acid and vanadic oxide at least one, lithium salts is selected from lithium carbonate, lithium fluoride, in lithia and lithium chloride at least one, the mass ratio of described lithium salts and metal oxide is 1:5～1:2, described p-type material comprises lanthanide oxide and is entrained in compound and the hole mobile material of the iron in described lanthanide oxide, described lanthanide oxide is selected from titanium dioxide praseodymium, praseodymium sesquioxide, at least one in three ytterbium oxides and samarium oxide, the compound of described iron is selected from iron chloride, at least one in ferric bromide and iron sulfide, described hole mobile material is selected from 1, 1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, 4, 4 ', 4 " tri-(carbazole-9-yl) triphenylamine and N, N '-(1-naphthyl)-N, N '-diphenyl-4, at least one in 4 '-benzidine, the compound of described iron and the mass ratio of lanthanide oxide are 1:100～1:20, the mass ratio of described hole mobile material and lanthanide oxide is 1:20～1:5, evaporation is 2 × 10 at vacuum pressure
-3～5 × 10
-5under Pa, carry out, described metal oxide and described lithium salts evaporate respectively in two evaporation boats, described metal oxide evaporation speed is 1nm/s～10nm/s, the evaporation speed of described lithium salts is 0.1nm/s～1nm/s, the compound of described lanthanide oxide, iron and hole mobile material evaporate in an evaporation boat, the evaporation rate of described lanthanide oxide is 0.1nm/s～1nm/s, the evaporation speed of the compound of described iron is 0.1nm/s～1nm/s, and the evaporation speed of described hole mobile material is 0.1nm/s～1nm/s, and
Form the second hole transmission layer, the second luminescent layer, the second electron transfer layer, electron injecting layer and negative electrode on described charge generation layer surface successively evaporation.
The material of described the first luminescent layer and described the second luminescent layer is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans, 9,10-bis--β-naphthylene anthracene, 4, at least one in 4 '-bis-(9-ethyl-3-carbazole vinyl)-1,1 '-biphenyl and oxine aluminium.
The material of described the first hole transmission layer and described the second hole transmission layer is selected from 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, 4,4 ', 4 " tri-(carbazole-9-yl) triphenylamine and N; N '-(1-naphthyl)-N, N '-diphenyl-4, at least one in 4 '-benzidine.
The thickness of described N-shaped layer is 5nm～60nm, and the thickness of described p-type layer is 10nm～30nm.
Before described anode surface forms hole injection layer, first antianode carries out pre-treatment, pre-treatment comprises: anode is carried out to photoetching treatment, be cut into needed size, adopt liquid detergent, deionized water, acetone, ethanol, the each Ultrasonic Cleaning 15min of isopropyl acetone, to remove the organic pollution of anode surface.
Above-mentioned organic electroluminescence device and preparation method thereof, charge generation layer is formed by N-shaped layer and p-type layer, wherein, N-shaped layer material comprises metal oxide and is entrained in the lithium salts in metal oxide, p-type material comprises lanthanide oxide and is entrained in compound and the hole mobile material of the iron in described lanthanide oxide, N-shaped layer can improve the concentration of electronics, electronics regeneration efficiency is improved, and improve electric transmission speed, lithium ion atomic radius is little, can be combined with metal oxide closely, causing property of rete is improved, iron compound in p-type material has a large amount of free charges, can improve carrier concentration, make p-type layer produce a large amount of holes, and lanthanide series compound work function-below 6.5e, mate the injectability that can improve hole with organic material, hole transmission layer can improve the transmission rate in hole, be conducive to the transmission of charge carrier, improve exciton recombination probability, this charge generation layer can effectively improve the luminous efficiency of organic electroluminescence device.
Brief description of the drawings
Fig. 1 is the structural representation of the organic electroluminescence device of an execution mode;
Fig. 2 is the preparation method's of the organic electroluminescence device of an execution mode flow chart;
Fig. 3 is brightness and the luminous efficiency graph of a relation of the organic electroluminescence device prepared of embodiment 1.
Embodiment
Below in conjunction with the drawings and specific embodiments, organic electroluminescence device and preparation method thereof is further illustrated.
Refer to Fig. 1, the organic electroluminescence device 100 of one execution mode comprises the anode 10, hole injection layer 20, the first hole transmission layer 32, the first luminescent layer 34, the first electron transfer layer 36, charge generation layer 40, the second hole transmission layer 52, the second luminescent layer 54, the second electron transfer layer 56, electron injecting layer 60 and the negative electrode 70 that stack gradually, and charge generation layer 40 comprises N-shaped layer 401 and p-type layer 402.
Anode 10 is indium tin oxide glass (ITO), aluminium zinc oxide glass (AZO) or indium-zinc oxide glass (IZO), is preferably ITO.
Hole injection layer 20 is formed at anode 10 surfaces.The material of hole injection layer 20 is selected from molybdenum trioxide (MoO
3), tungstic acid (WO
3) and vanadic oxide (V
2o
5) at least one, be preferably WO
3.The thickness of hole injection layer 20 is 20nm～80nm, is preferably 40nm.
The first hole transmission layer 32 is formed at the surface of hole injection layer 20.The material of the first hole transmission layer 32 is selected from 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), 4,4 ', 4 " tri-(carbazole-9-yl) triphenylamine (TCTA) and N, N '-(1-naphthyl)-N, N '-diphenyl-4; at least one in 4 '-benzidine (NPB), is preferably TCTA.The thickness of the first hole transmission layer 32 is 20nm～60nm, is preferably 50nm.
The first luminescent layer 34 is formed at the surface of the first hole transmission layer 32.The material of the first luminescent layer 34 is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), 9,10-bis--β-naphthylene anthracene (ADN), 4,4 '-bis-(9-ethyl-3-carbazole vinyl)-1,1 '-biphenyl (BCzVBi) and 8-hydroxyquinoline aluminum (Alq
3) at least one, be preferably BCzVBi.The thickness of luminescent layer 40 is 5nm～40nm, is preferably 20nm.
The first electron transfer layer 36 is formed at the surface of the first luminescent layer 32.The material of the first electron transfer layer 36 is selected from 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2, and at least one in 4-triazole derivative (as TAZ) and N-aryl benzimidazole (TPBI), is preferably Bphen.The thickness of the first electron transfer layer 36 is 40nm～300nm, is preferably 150nm.
Charge generation layer 40 is formed at the surface of the first electron transfer layer 36.Charge generation layer 40, charge generation layer 40 comprises N-shaped layer 401 and p-type layer 402, the material of N-shaped layer 401 comprises metal oxide and is entrained in the lithium salts in metal oxide.Wherein, metal oxide is selected from least one in molybdenum trioxide, tungstic acid and vanadic oxide, and lithium salts is selected from least one in lithium carbonate, lithium fluoride, lithia and lithium chloride, and the mass ratio of described lithium salts and metal oxide is 1:5～1:2.Described p-type layer 402 material comprise lanthanide oxide and are entrained in compound and the hole mobile material of the iron in described lanthanide oxide, described lanthanide oxide is selected from titanium dioxide praseodymium, praseodymium sesquioxide, at least one in three ytterbium oxides and samarium oxide, the compound of described iron is selected from iron chloride, at least one in ferric bromide and iron sulfide, described hole mobile material is selected from 1, 1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, 4, 4 ', 4 " tri-(carbazole-9-yl) triphenylamine and N, N '-(1-naphthyl)-N, N '-diphenyl-4, at least one in 4 '-benzidine, the compound of described iron and the mass ratio of lanthanide oxide are 1:100～1:20, the mass ratio of described hole mobile material and lanthanide oxide is 1:20～1:5.The thickness of described N-shaped layer 401 is 5nm～60nm, and the thickness of described p-type layer 402 is 10nm～30nm.
The second hole transmission layer 52 is formed at the surface of doped layer 402.The material of the second hole transmission layer 52 is selected from 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), 4,4 ', 4 " tri-(carbazole-9-yl) triphenylamine (TCTA) and N, N '-(1-naphthyl)-N, N '-diphenyl-4; at least one in 4 '-benzidine (NPB), is preferably TAPC.The thickness of the second hole transmission layer 52 is 20nm～60nm, is preferably 30nm.
The second luminescent layer 54 is formed at the surface of the second hole transmission layer 52.The material of the second luminescent layer 54 is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), 9,10-bis--β-naphthylene anthracene (ADN), 4,4 '-bis-(9-ethyl-3-carbazole vinyl)-1,1 '-biphenyl (BCzVBi) and 8-hydroxyquinoline aluminum (Alq
3) at least one, be preferably BCzVBi.The thickness of luminescent layer 40 is 5nm～40nm, is preferably 20nm.
The second electron transfer layer 56 is formed at the surface of the second luminescent layer 52.The material of the second electron transfer layer 56 is selected from 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2, and at least one in 4-triazole derivative (as TAZ) and N-aryl benzimidazole (TPBI), is preferably Bphen.The thickness of the second electron transfer layer 56 is 40nm～300nm, is preferably 150nm.
Electron injecting layer 60 is formed at the second electron transfer layer 56 surfaces.The material of electron injecting layer 60 is selected from cesium carbonate (Cs
2cO
3), cesium fluoride (CsF), nitrine caesium (CsN
3) and lithium fluoride (LiF) at least one, be preferably LiF.The thickness of electron injecting layer 60 is 0.5nm～10nm, is preferably 1nm.
Negative electrode 70 is formed at electron injecting layer 60 surfaces.The material of negative electrode 70 is selected from least one in silver (Ag), aluminium (Al), platinum (Pt) and gold (Au), is preferably Ag.The thickness of negative electrode 70 is 60nm～300nm, is preferably 150nm.
Above-mentioned organic electroluminescence device 100, charge generation layer 40 is formed by N-shaped layer and p-type layer, wherein, N-shaped layer material comprises metal oxide and is entrained in the lithium salts in metal oxide, p-type material comprises lanthanide oxide and is entrained in compound and the hole mobile material of the iron in described lanthanide oxide, N-shaped layer can improve the concentration of electronics, electronics regeneration efficiency is improved, and improve electric transmission speed, lithium ion atomic radius is little, can be combined with metal oxide closely, causing property of rete is improved, iron compound in p-type material has a large amount of free charges, can improve carrier concentration, make p-type layer produce a large amount of holes, and lanthanide series compound work function-below 6.5e, mate the injectability that can improve hole with organic material, hole transmission layer can improve the transmission rate in hole, be conducive to the transmission of charge carrier, improve exciton recombination probability, this charge generation layer can effectively improve the luminous efficiency of organic electroluminescence device 100, organic electroluminescence device 100 has two luminescence units simultaneously, thereby has brightness and luminous efficiency at double.
Be appreciated that other functional layers also can be set in this organic electroluminescence device 100 as required.
Please refer to Fig. 2, the preparation method of the organic electroluminescence device 100 of an embodiment, it comprises the following steps:
Step S110, prepare hole injection layer 20, the first hole transmission layer 32, the first luminescent layer 34 and the first electron transfer layer 36 at anode surface successively evaporation.
Anode 10 is indium tin oxide glass (ITO), aluminium zinc oxide glass (AZO) or indium-zinc oxide glass (IZO), is preferably ITO.
In present embodiment, before anode 10 surfaces form hole injection layer 20, first antianode 10 carries out pre-treatment, pre-treatment comprises: anode 10 is carried out to photoetching treatment, be cut into needed size, adopt liquid detergent, deionized water, acetone, ethanol, the each Ultrasonic Cleaning 15min of isopropyl acetone, to remove the organic pollution on anode 10 surfaces.
Hole injection layer 20 is formed at the surface of anode 10.Hole injection layer 20 is prepared by evaporation.The material of hole injection layer 20 is selected from molybdenum trioxide (MoO
3), tungstic acid (WO
3) and vanadic oxide (V
2o
5) at least one, be preferably WO
3.The thickness of hole injection layer 20 is 20nm～80nm, is preferably 40nm.Evaporation is 5 × 10 at vacuum pressure
-3～2 × 10
-4under Pa, carry out, evaporation speed is 0.1nm/s～1nm/s.
The first hole transmission layer 32 is formed at the surface of hole injection layer 20.The first hole transmission layer 32 is prepared by evaporation.The material of the first hole transmission layer 32 is selected from 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), 4,4 ', 4 " tri-(carbazole-9-yl) triphenylamine (TCTA) and N, N '-(1-naphthyl)-N, N '-diphenyl-4; at least one in 4 '-benzidine (NPB), is preferably TCTA.The thickness of the first hole transmission layer 32 is 20nm～60nm, is preferably 50nm.Evaporation is 5 × 10 at vacuum pressure
-3～2 × 10
-4under Pa, carry out, evaporation speed is 0.1nm/s～1nm/s.
The first luminescent layer 34 is formed at the surface of the first hole transmission layer 32.The first luminescent layer 34 is prepared by evaporation.The material of the first luminescent layer 34 is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), 9,10-bis--β-naphthylene anthracene (ADN), 4,4 '-bis-(9-ethyl-3-carbazole vinyl)-1,1 '-biphenyl (BCzVBi) and 8-hydroxyquinoline aluminum (Alq
3) at least one, be preferably BCzVBi.The thickness of luminescent layer 40 is 5nm～40nm, is preferably 20nm.Evaporation is 5 × 10 at vacuum pressure
-3～2 × 10
-4under Pa, carry out, evaporation speed is 0.1nm/s～1nm/s.
The first electron transfer layer 36 is formed at the surface of the first luminescent layer 32.The first electron transfer layer 36 is prepared by evaporation.The material of the first electron transfer layer 36 is selected from 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2, and at least one in 4-triazole derivative (as TAZ) and N-aryl benzimidazole (TPBI), is preferably Bphen.The thickness of the first electron transfer layer 36 is 40nm～300nm, is preferably 150nm.Evaporation is 5 × 10 at vacuum pressure
-3～2 × 10
-4under Pa, carry out, evaporation speed is 0.1nm/s～1nm/s.
Step S120, prepare charge generation layer 40 at the surperficial evaporation of the first electron transfer layer 36.
Charge generation layer 40 is formed at the surface of the first electron transfer layer 36, and charge generation layer 40 comprises N-shaped layer 401 and p-type layer 402, and the material of N-shaped layer 401 comprises metal oxide and is entrained in the lithium salts in metal oxide.Wherein, metal oxide is selected from least one in molybdenum trioxide, tungstic acid and vanadic oxide, and lithium salts is selected from least one in lithium carbonate, lithium fluoride, lithia and lithium chloride, and the mass ratio of described lithium salts and metal oxide is 1:5～1:2.Described p-type layer 402 material comprise lanthanide oxide and are entrained in compound and the hole mobile material of the iron in described lanthanide oxide, described lanthanide oxide is selected from titanium dioxide praseodymium, praseodymium sesquioxide, at least one in three ytterbium oxides and samarium oxide, the compound of described iron is selected from iron chloride, at least one in ferric bromide and iron sulfide, described hole mobile material is selected from 1, 1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, 4, 4 ', 4 " tri-(carbazole-9-yl) triphenylamine and N, N '-(1-naphthyl)-N, N '-diphenyl-4, at least one in 4 '-benzidine, the compound of described iron and the mass ratio of lanthanide oxide are 1:100～1:20, the mass ratio of described hole mobile material and lanthanide oxide is 1:20～1:5.The thickness of described N-shaped layer 401 is 5nm～60nm, and the thickness of described p-type layer 402 is 10nm～30nm.Evaporation is 2 × 10 at vacuum pressure
-3～5 × 10
-5under Pa, carry out, described metal oxide and described lithium salts evaporate respectively in two evaporation boats, described metal oxide evaporation speed is 1nm/s～10nm/s, the evaporation speed of described lithium salts is 0.1nm/s～1nm/s, the compound of described lanthanide oxide, iron and hole mobile material evaporate respectively in three evaporation boats, the evaporation rate of described lanthanide oxide is 0.1nm/s～1nm/s, the evaporation speed of the compound of described iron is 0.1nm/s～1nm/s, and the evaporation speed of described hole mobile material is 0.1nm/s～1nm/s.
Step S130, prepare the second hole transmission layer 52, the second luminescent layer 54, the second electron transfer layer 56, electron injecting layer 60 and negative electrode 70 on charge generation layer surface successively evaporation.
The second hole transmission layer 52 is formed at the surface of doped layer 402.The material of the second hole transmission layer 52 is selected from 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), 4,4 ', 4 " tri-(carbazole-9-yl) triphenylamine (TCTA) and N, N '-(1-naphthyl)-N, N '-diphenyl-4; at least one in 4 '-benzidine (NPB), is preferably TAPC.The thickness of the second hole transmission layer 52 is 20nm～60nm, is preferably 30nm.Evaporation is 5 × 10 at vacuum pressure
-3～2 × 10
-4under Pa, carry out, evaporation speed is 0.1nm/s～1nm/s.
The second luminescent layer 54 is formed at the surface of the second hole transmission layer 52.The material of the second luminescent layer 54 is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), 9,10-bis--β-naphthylene anthracene (ADN), 4,4 '-bis-(9-ethyl-3-carbazole vinyl)-1,1 '-biphenyl (BCzVBi) and 8-hydroxyquinoline aluminum (Alq
3) at least one, be preferably BCzVBi.The thickness of luminescent layer 40 is 5nm～40nm, is preferably 20nm.Evaporation is 5 × 10 at vacuum pressure
-3～2 × 10
-4under Pa, carry out, evaporation speed is 0.1nm/s～1nm/s.
The second electron transfer layer 56 is formed at the surface of the second luminescent layer 52.The material of the second electron transfer layer 56 is selected from 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2, and at least one in 4-triazole derivative (as TAZ) and N-aryl benzimidazole (TPBI), is preferably Bphen.The thickness of the second electron transfer layer 56 is 40nm～300nm, is preferably 150nm.Evaporation is 5 × 10 at vacuum pressure
-3～2 × 10
-4under Pa, carry out, evaporation speed is 0.1nm/s～1nm/s.
Electron injecting layer 60 is formed at the second electron transfer layer 56 surfaces.The material of electron injecting layer 60 is selected from cesium carbonate (Cs
2cO
3), cesium fluoride (CsF), nitrine caesium (CsN
3) and lithium fluoride (LiF) at least one, be preferably LiF.The thickness of electron injecting layer 60 is 0.5nm～10nm, is preferably 1nm.Evaporation is 5 × 10 at vacuum pressure
-3～2 × 10
-4under Pa, carry out, evaporation speed is 0.1nm/s～1nm/s.
Negative electrode 70 is formed at electron injecting layer 60 surfaces.The material of negative electrode 70 is selected from least one in silver (Ag), aluminium (Al), platinum (Pt) and gold (Au), is preferably Ag.The thickness of negative electrode 70 is 60nm～300nm, is preferably 150nm.Evaporation is 5 × 10 at vacuum pressure
-3～2 × 10
-4under Pa, carry out, evaporation speed is 1nm/s～10nm/s.
Above-mentioned organic electroluminescence device preparation method, technique is simple, and the luminous efficiency of the organic electroluminescence device of preparation is higher.
Below in conjunction with specific embodiment, the preparation method of organic electroluminescence device provided by the invention is elaborated.
The preparation used of the embodiment of the present invention and comparative example and tester are: high vacuum coating system (scientific instrument development center, Shenyang Co., Ltd), the USB4000 fiber spectrometer testing electroluminescent spectrum of U.S. marine optics Ocean Optics, the Keithley2400 test electric property of Keithley company of the U.S., CS-100A colorimeter test brightness and the colourity of Japanese Konica Minolta company.
Embodiment 1
Structure prepared by the present embodiment is ITO/WO
3/ TCTA/BCzVBi/Bphen/Li
2cO
3: MoO
3/ FeCl
3: TAPC:Pr
2o
3the organic electroluminescence device of/TAPC/BCzVBi/Bphen/LiF/Ag.
First ITO is carried out to photoetching treatment, be cut into needed size, use successively liquid detergent, deionized water, acetone, ethanol, the each ultrasonic 15min of isopropyl alcohol, the organic pollution of removal glass surface; Evaporation hole injection layer, material is WO
3, thickness is 40nm; Evaporation the first hole transmission layer, material is TCTA, thickness is 25nm; Evaporation the first luminescent layer, material is BCzVBi, thickness is 30nm; Evaporation the first electron transfer layer, material is Bphen, thickness is 60nm; Evaporation charge generation layer, N-shaped layer is Li
2cO
3: MoO
3, wherein, Li
2cO
3with MoO
3mass ratio be 3:100, thickness is 40nm, p-type layer is FeCl
3: TAPC:Pr
2o
3, FeCl
3with Pr
2o
3mass ratio be 1:50, TAPC and Pr
2o
3mass ratio be 1:10, thickness is 20nm; Evaporation the second hole transmission layer, material is TAPC, thickness is 30nm; Evaporation the second luminescent layer, material is BCzVBi, thickness is 25nm; Evaporation the second electron transfer layer, material is Bphen, thickness is 150nm; Evaporation electron injecting layer, material is LiF, thickness is 1nm; Evaporation negative electrode, material is Ag, thickness is 150nm.Finally obtain needed electroluminescent device.Evaporation is 8 × 10 at vacuum pressure
-5under Pa, carry out, described metal oxide and described lithium salts evaporate respectively in two evaporation boats, described metal oxide evaporation speed is 1nm/s～5nm/s, the evaporation speed of described lithium salts is 1.5nm/s, the compound of described lanthanide oxide, iron and hole mobile material evaporate respectively in three evaporation boats, the evaporation rate of described lanthanide oxide is 0.2nm/s, and the evaporation speed of the compound of described iron is 0.2nm/s, and the evaporation speed of described hole mobile material is 0.2nm/s.
Refer to Fig. 3, the structure that is depicted as preparation in embodiment 1 is ITO/WO
3/ TCTA/BCzVBi/Bphen/Li
2cO
3: MoO
3/ FeCl
3: TAPC:Pr
2o
3the organic electroluminescence device (curve 1) of/TAPC/BCzVBi/Bphen/LiF/Ag is the brightness of ito glass/WO3/TCTA/BCzVBi/Bphen/LiF/Al (curve 2) and the relation of luminous efficiency with structure prepared by comparative example.In the organic electroluminescence device that in organic electroluminescence device prepared by comparative example, each layer thickness is prepared with embodiment 1, each layer thickness is identical.
From scheming, can see, under different brightness, all large than comparative example of the luminous efficiency of embodiment 1, the maximum lumen efficiency of organic electroluminescence device prepared by embodiment 1 is 4.1lm/W, and the luminous efficiency of organic electroluminescence device prepared by comparative example is only 3.1lm/W, and the luminous efficiency of comparative example along with the increase of brightness fast-descending, this explanation, charge generation layer is formed by N-shaped layer and p-type layer, wherein, N-shaped layer material comprises metal oxide and is entrained in the lithium salts in metal oxide, p-type material comprises lanthanide oxide and is entrained in compound and the hole mobile material of the iron in described lanthanide oxide, N-shaped layer can improve the concentration of electronics, electronics regeneration efficiency is improved, and improve electric transmission speed, lithium ion atomic radius is little, can be combined with metal oxide closely, causing property of rete is improved, iron compound in p-type material has a large amount of free charges, can improve carrier concentration, make p-type layer produce a large amount of holes, and lanthanide series compound work function-below 6.5e, mate the injectability that can improve hole with organic material, hole transmission layer can improve the transmission rate in hole, be conducive to the transmission of charge carrier, improve exciton recombination probability, improve light extraction efficiency, this charge generation layer can effectively improve the luminous efficiency of organic electroluminescence device.
The luminous efficiency of the organic electroluminescence device that below prepared by each embodiment is all similar with embodiment 1, and each organic electroluminescence device also has similar luminous efficiency, repeats no more below.
Embodiment 2
Structure prepared by the present embodiment is AZO/V
2o
5/ TCTA/ADN/Bphen/LiF:WO
3/ FeBr3:TCTA:PrO
2/ NPB/ADN/TPBi/CsN
3the organic electroluminescence device of/Pt.
First AZO substrate of glass is used to liquid detergent successively, deionized water, ultrasonic 15min, the organic pollution of removal glass surface; Evaporation is prepared hole injection layer, and material is V
2o
5, thickness is 80nm; Evaporation is prepared the first hole transmission layer, and material is TCTA, and thickness is 60nm; Evaporation is prepared the first luminescent layer, and material is ADN, and thickness is 5nm; Evaporation is prepared the first electron transfer layer, and material is Bphen, and thickness is 200nm; Evaporation charge generation layer, N-shaped layer is LiF:WO
3, wherein, LiF and WO
3mass ratio be 1:5,, thickness is 60nm, p-type layer is FeBr
3: TCTA:PrO
2, FeBr
3with PrO
2mass ratio be 1:100, TCTA and PrO
2mass ratio be 1:20, thickness is 10nm; Evaporation is prepared the second hole transmission layer, and material is NPB, and thickness is 20nm, the second luminescent layer, and material is ADN, thickness is 7nm; Evaporation is prepared the second electron transfer layer, and material is TPBi, and thickness is 40nm; Evaporation is prepared electron injecting layer, and material is CsN
3, thickness is 0.5nm; Evaporation is prepared negative electrode, and material is Pt, and thickness is 60nm, finally obtains needed electroluminescent device.Evaporation is 2 × 10 at vacuum pressure
-3under Pa, carry out, described metal oxide and described lithium salts evaporate respectively in two evaporation boats, described metal oxide evaporation speed is 10nm/s, the evaporation speed of described lithium salts is 1nm/s, the compound of described lanthanide oxide, iron and hole mobile material evaporate respectively in three evaporation boats, the evaporation rate of described lanthanide oxide is 1nm/s, and the evaporation speed of the compound of described iron is 1nm/s, and the evaporation speed of described hole mobile material is 1nm/s.
Embodiment 3
Structure prepared by the present embodiment is IZO/MoO
3/ NPB/Alq
3/ Bphen/Li
2o:V
2o
5/ Fe
2s
3: NPB:Yb
2o
3/ NPB/Alq
3the organic electroluminescence device of/TAZ/CsF/Ag.
First IZO substrate of glass is used to liquid detergent successively, deionized water, ultrasonic 15min, the organic pollution of removal glass surface; Evaporation is prepared hole injection layer, and material is MoO
3, thickness is 20nm; Evaporation is prepared the first hole transmission layer, and material is NPB, and thickness is 30nm; Evaporation is prepared the first luminescent layer, and material is Alq
3, thickness is 40nm; Evaporation is prepared the first electron transfer layer, and material is Bphen, and thickness is 200nm; Evaporation is prepared charge generation layer, and N-shaped layer is Li
2o:V
2o
5, Li
2o and V
2o
5mass ratio be 1:2, thickness is 5nm, p-type layer is Fe
2s
3: NPB:Yb
2o
3, Fe
2s
3with Yb
2o
3mass ratio be 1:20, NPB and Yb
2o
3mass ratio be 1:5, thickness is 60nm; Evaporation is prepared the second hole transmission layer, and material is NPB, and thickness is 60nm; Evaporation is prepared the second luminescent layer, and material is Alq
3, thickness is 30nm; Evaporation is prepared the second electron transfer layer, and material is TAZ, and thickness is 40nm; Evaporation is prepared electron injecting layer, and material is CsF, and thickness is 10nm; Evaporation is prepared negative electrode, and material is Ag, and thickness is 300nm, finally obtains needed electroluminescent device.Evaporation is 2 × 10 at vacuum pressure
-4under Pa, carry out, metal oxide and described lithium salts evaporate respectively in two evaporation boats, metal oxide evaporation speed is 1nm/s, the evaporation speed of lithium salts is 0.1nm/s, the compound of lanthanide oxide, iron and hole mobile material evaporate respectively in three evaporation boats, the evaporation rate of lanthanide oxide is 0.1nm/s, and the evaporation speed of the compound of iron is 0.1nm/s, and the evaporation speed of hole mobile material is 0.1nm/s.
Embodiment 4
Structure prepared by the present embodiment is IZO/WO
3/ TAPC/DCJTB/TPBi/LiCl
2: WO
3/ FeCl
3: NPB:Sm
2o
3/ TCTA/DCJTB/TAZ/Cs
2cO
3the organic electroluminescence device of/Au.
First IZO substrate of glass is used to liquid detergent successively, deionized water, ultrasonic 15min, the organic pollution of removal glass surface; Evaporation is prepared hole injection layer, and material is WO
3, thickness is 30nm; Evaporation is prepared the first hole transmission layer, and material is TAPC, and thickness is 50nm; Evaporation is prepared the first luminescent layer, and material is DCJTB, and thickness is 5nm; Evaporation is prepared the first electron transfer layer, and material is TPBi, and thickness is 40nm; Evaporation is prepared charge generation layer, and N-shaped layer is LiCl
2: WO
3, LiCl
2with WO
3mass ratio be 7:20, thickness is 45nm, p-type layer is FeCl
3: NPB:Sm
2o
3, FeCl
3with Sm
2o
3mass ratio be 3:100, NPB and Sm
2o
3mass ratio be 2:25, thickness is 25nm; Evaporation is prepared the second hole transmission layer, and material is TCTA, and thickness is 50nm, the second luminescent layer, and material is DCJTB, thickness is 5nm; Evaporation is prepared the second electron transfer layer, and material is TAZ, and thickness is 100nm; Evaporation is prepared electron injecting layer, and material is Cs
2cO
3, thickness is 2nm; Evaporation is prepared negative electrode, and material is Au, and thickness is 180nm, finally obtains needed electroluminescent device.Evaporation is 5 × 10 at vacuum pressure
-4under Pa, carry out, metal oxide and described lithium salts evaporate respectively in two evaporation boats, metal oxide evaporation speed is 6nm/s, the evaporation speed of lithium salts is 0.8nm/s, the compound of lanthanide oxide, iron and hole mobile material evaporate respectively in three evaporation boats, the evaporation rate of lanthanide oxide is 0.6nm/s, and the evaporation speed of the compound of iron is 0.6nm/s, and the evaporation speed of hole mobile material is 0.6nm/s.
The above embodiment has only expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (10)
1. an organic electroluminescence device, it is characterized in that, comprise the anode, hole injection layer, the first hole transmission layer, the first luminescent layer, the first electron transfer layer, charge generation layer, the second hole transmission layer, the second luminescent layer, the second electron transfer layer, electron injecting layer and the negative electrode that stack gradually, described charge generation layer comprises N-shaped layer and p-type layer, and described N-shaped layer material comprises metal oxide and is entrained in the lithium salts in metal oxide, wherein, metal oxide is selected from molybdenum trioxide, in tungstic acid and vanadic oxide at least one, lithium salts is selected from lithium carbonate, lithium fluoride, in lithia and lithium chloride at least one, the mass ratio of described lithium salts and metal oxide is 1:5～1:2, described p-type material comprises lanthanide oxide and is entrained in compound and the hole mobile material of the iron in described lanthanide oxide, described lanthanide oxide is selected from titanium dioxide praseodymium, praseodymium sesquioxide, at least one in three ytterbium oxides and samarium oxide, the compound of described iron is selected from iron chloride, at least one in ferric bromide and iron sulfide, described hole mobile material is selected from 1, 1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, 4, 4 ', 4 " tri-(carbazole-9-yl) triphenylamine and N, N '-(1-naphthyl)-N, N '-diphenyl-4, at least one in 4 '-benzidine, the compound of described iron and the mass ratio of lanthanide oxide are 1:100～1:20, the mass ratio of described hole mobile material and lanthanide oxide is 1:20～1:5.
2. organic electroluminescence device according to claim 1, is characterized in that, the thickness of described N-shaped layer is 5nm～60nm, and the thickness of described p-type layer is 10nm～30nm.
3. organic electroluminescence device according to claim 1, it is characterized in that, the material of described the first luminescent layer and described the second luminescent layer is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans, 9,10-bis--β-naphthylene anthracene, 4, at least one in 4 '-bis-(9-ethyl-3-carbazole vinyl)-1,1 '-biphenyl and oxine aluminium.
4. organic electroluminescence device according to claim 1, it is characterized in that, the material of described the first hole transmission layer and described the second hole transmission layer is selected from 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, 4,4 ', 4 " tri-(carbazole-9-yl) triphenylamine and N; N '-(1-naphthyl)-N, N '-diphenyl-4, at least one in 4 '-benzidine.
5. organic electroluminescence device according to claim 1, is characterized in that, the material of described the first electron transfer layer and described the second electron transfer layer is selected from 4,7-diphenyl-1,10-phenanthroline, 1,2, at least one in 4-triazole derivative and N-aryl benzimidazole.
6. a preparation method for organic electroluminescence device, is characterized in that, comprises the following steps:
Prepare hole injection layer, the first hole transmission layer, the first luminescent layer and the first electron transfer layer at anode surface successively evaporation;
Prepare charge generation layer at described the first electron transfer layer surface evaporation, described charge generation layer comprises N-shaped layer and p-type layer, and described N-shaped layer material comprises metal oxide and is entrained in the lithium salts in metal oxide, wherein, metal oxide is selected from molybdenum trioxide, in tungstic acid and vanadic oxide at least one, lithium salts is selected from lithium carbonate, lithium fluoride, in lithia and lithium chloride at least one, the mass ratio of described lithium salts and metal oxide is 1:5～1:2, described p-type material comprises lanthanide oxide and is entrained in compound and the hole mobile material of the iron in described lanthanide oxide, described lanthanide oxide is selected from titanium dioxide praseodymium, praseodymium sesquioxide, at least one in three ytterbium oxides and samarium oxide, the compound of described iron is selected from iron chloride, at least one in ferric bromide and iron sulfide, described hole mobile material is selected from 1, 1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, 4, 4 ', 4 " tri-(carbazole-9-yl) triphenylamine and N, N '-(1-naphthyl)-N, N '-diphenyl-4, at least one in 4 '-benzidine, the compound of described iron and the mass ratio of lanthanide oxide are 1:100～1:20, the mass ratio of described hole mobile material and lanthanide oxide is 1:20～1:5, evaporation is 2 × 10 at vacuum pressure
-3～5 × 10
-5under Pa, carry out, described metal oxide and described lithium salts evaporate respectively in two evaporation boats, described metal oxide evaporation speed is 1nm/s～10nm/s, the evaporation speed of described lithium salts is 0.1nm/s～1nm/s, the compound of described lanthanide oxide, iron and hole mobile material evaporate in an evaporation boat, the evaporation rate of described lanthanide oxide is 0.1nm/s～1nm/s, the evaporation speed of the compound of described iron is 0.1nm/s～1nm/s, and the evaporation speed of described hole mobile material is 0.1nm/s～1nm/s, and
Form the second hole transmission layer, the second luminescent layer, the second electron transfer layer, electron injecting layer and negative electrode on described charge generation layer surface successively evaporation.
7. the preparation method of organic electroluminescence device according to claim 6, it is characterized in that, the material of described the first luminescent layer and described the second luminescent layer is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans, 9,10-bis--β-naphthylene anthracene, 4, at least one in 4 '-bis-(9-ethyl-3-carbazole vinyl)-1,1 '-biphenyl and oxine aluminium.
8. the preparation method of organic electroluminescence device according to claim 6, it is characterized in that, the material of described the first hole transmission layer and described the second hole transmission layer is selected from 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, 4,4 ', 4 " tri-(carbazole-9-yl) triphenylamine and N; N '-(1-naphthyl)-N, N '-diphenyl-4, at least one in 4 '-benzidine.
9. the preparation method of organic electroluminescence device according to claim 6, is characterized in that, the thickness of described N-shaped layer is 5nm～60nm, and the thickness of described p-type layer is 10nm～30nm.
10. the preparation method of organic electroluminescence device according to claim 6, it is characterized in that, before described anode surface forms hole injection layer, first antianode carries out pre-treatment, pre-treatment comprises: anode is carried out to photoetching treatment, be cut into needed size, adopt liquid detergent, deionized water, acetone, ethanol, the each Ultrasonic Cleaning 15min of isopropyl acetone, to remove the organic pollution of anode surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310109253.8A CN104078603A (en) | 2013-03-29 | 2013-03-29 | Organic light-emitting diode and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310109253.8A CN104078603A (en) | 2013-03-29 | 2013-03-29 | Organic light-emitting diode and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104078603A true CN104078603A (en) | 2014-10-01 |
Family
ID=51599755
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310109253.8A Pending CN104078603A (en) | 2013-03-29 | 2013-03-29 | Organic light-emitting diode and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104078603A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030170491A1 (en) * | 2002-02-15 | 2003-09-11 | Eastman Kodak Company | Providing an organic electroluminescent device having stacked electroluminescent units |
| CN1913731A (en) * | 2006-08-28 | 2007-02-14 | 清华大学 | Organic electroluminescence device |
| CN101006594A (en) * | 2004-08-20 | 2007-07-25 | 伊斯曼柯达公司 | White OLED having multiple white electroluminescent units |
| WO2010062643A1 (en) * | 2008-10-28 | 2010-06-03 | The Regents Of The University Of Michigan | Stacked white oled having separate red, green and blue sub-elements |
| CN102723442A (en) * | 2011-03-30 | 2012-10-10 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
| CN102810644A (en) * | 2011-06-03 | 2012-12-05 | 海洋王照明科技股份有限公司 | Laminated organic electroluminescent device and preparation method thereof |
-
2013
- 2013-03-29 CN CN201310109253.8A patent/CN104078603A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030170491A1 (en) * | 2002-02-15 | 2003-09-11 | Eastman Kodak Company | Providing an organic electroluminescent device having stacked electroluminescent units |
| CN101006594A (en) * | 2004-08-20 | 2007-07-25 | 伊斯曼柯达公司 | White OLED having multiple white electroluminescent units |
| CN1913731A (en) * | 2006-08-28 | 2007-02-14 | 清华大学 | Organic electroluminescence device |
| WO2010062643A1 (en) * | 2008-10-28 | 2010-06-03 | The Regents Of The University Of Michigan | Stacked white oled having separate red, green and blue sub-elements |
| CN102723442A (en) * | 2011-03-30 | 2012-10-10 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
| CN102810644A (en) * | 2011-06-03 | 2012-12-05 | 海洋王照明科技股份有限公司 | Laminated organic electroluminescent device and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104037328A (en) | Organic light emitting diode and preparation method thereof | |
| CN103972413A (en) | Organic light-emitting device and production method thereof | |
| CN104183738A (en) | Organic electroluminescent device and preparation method thereof | |
| CN103972420A (en) | Organic light-emitting device and method for manufacturing same | |
| CN104183778A (en) | Organic electroluminescent device and preparation method thereof | |
| CN103972408A (en) | Organic light-emitting device and method for manufacturing same | |
| CN104183732A (en) | Organic light emitting device and manufacturing method thereof | |
| CN104253243A (en) | Organic electroluminescent device and preparation method thereof | |
| CN103972421A (en) | Organic light-emitting device and production method thereof | |
| CN104253228A (en) | Organic light emitting diode and preparation method thereof | |
| CN104051641A (en) | Laminated organic electroluminescent device and manufacturing method thereof | |
| CN104051642A (en) | Laminated organic electroluminescent device and manufacturing method thereof | |
| CN104078575A (en) | Organic light-emitting diode and preparation method thereof | |
| CN104078568A (en) | Organic light-emitting diode and preparation method thereof | |
| CN104183731A (en) | Organic light emitting device and manufacturing method thereof | |
| CN104253229A (en) | Organic light-emitting device and manufacturing method thereof | |
| CN104183777A (en) | Organic light emitting device and manufacturing method thereof | |
| CN103972411A (en) | Organic light-emitting device and production method thereof | |
| CN104078603A (en) | Organic light-emitting diode and preparation method thereof | |
| CN103972409A (en) | Organic light-emitting device and method for manufacturing same | |
| CN103972410A (en) | Organic light-emitting device and production method thereof | |
| CN104183739A (en) | Organic electroluminescent device and preparation method thereof | |
| CN103972417A (en) | Organic light-emitting device and production method thereof | |
| CN104253227A (en) | Organic light emitting diode and preparation method thereof | |
| CN103824956A (en) | Organic electroluminescent device and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20141001 |