CN104124607A - Device for generating picosecond pulse laser with high average power - Google Patents
Device for generating picosecond pulse laser with high average power Download PDFInfo
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- CN104124607A CN104124607A CN201410122645.2A CN201410122645A CN104124607A CN 104124607 A CN104124607 A CN 104124607A CN 201410122645 A CN201410122645 A CN 201410122645A CN 104124607 A CN104124607 A CN 104124607A
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Abstract
The invention discloses a device for generating a picosecond pulse laser with a high average power. The device comprises a semiconductor laser unit for generating subnanosecond to nanosecond pulses, a chirp pulse modulator, a solid or optical fibre laser power amplifier and a pulse compressor, wherein the semiconductor laser unit is driven by a high-speed drive power supply to generate the subnanosecond to nanosecond pulse lasers, the generated pulse lasers are subjected to chirp modulation by the chirp pulse modulator, the modulated pulses are amplified by the laser power amplifier, and finally compressed by the pulse compressor to obtain the picosecond pulse laser. The device disclosed by the invention is capable of acquiring the picosecond pulse laser with the high average power, and has the advantages of stable pulse output, high reliability, simple structure, small size and high efficiency.
Description
Technical field
The present invention relates to one and can produce and have high stability, the high-average power picosecond pulse laser device of high reliability, can be widely used in the fields such as industrial processes, laser radar and scientific research.
Background technology
High-average power picosecond pulse laser device due to picopulse and the matter interaction time short, there is no obvious thermal effect, can realize the nanosecond laser processing effect that is beyond one's reach in laser retrofit field, thus more and more extensive in the application of field of laser processing.Traditional picosecond laser adopts mode-locking technique to obtain picosecond laser pulse mostly, and the laser pulse repetition frequency obtaining is up to several megahertzes, and the energy of pulse is very low, conventionally only have several joules of receiving, need from pulse train, to select individual pulse to amplify by so-called " regenerative amplification " technology, reduce repetition rate thereby realize, obtain tens of thousand pulse repetition frequencys to hundreds of KHz that machining needs, and average laser power is amplified to required power.This traditional picosecond pulse laser technological system complexity, reliability and stability are all difficult to meet commercial Application environment, and cost is high, expensive.
In order to realize the high-average power picosecond pulse laser device of high reliability, high stability, the human hairs such as the Dodop of Jena, Germany university understand and will be generally used for producing the pulse compression technique of ultrashort pulse for generation of a kind of laser of picosecond laser pulse, this laser is made up of passive Q-adjusted seed laser, spectrum widening element, pulse compression element, and Fig. 1 is the typical case of this laser.Fig. 1. in 1 be the passive Q-adjusted seed laser of microchip, 2 and 3 is fiber amplifier and spectrum widening device, 4 is pulse compression element.The principle of this invention is the pulse laser that microchip passive Q-regulaitng laser produces about 100ps width, spectral width is 20pm, this pulse laser is amplified by fiber amplifier 2, in amplifying, the self-alignment phase modulating action of fiber amplifier makes live width broadening, and the spectral width after broadening can reach 0.52nm.Finally compressed by pulse compression element 4 paired pulses again, realize the laser pulse width that is less than 10ps.Pulse compression element can adopt grating pair or the prism pair with Negative Dispersion Properties, also can adopt the combination of grating and prism.The feature of this laser is compact conformation, and reliability is high, and cost is well below the picosecond laser of traditional locked mode mechanism.But the shortcoming of this laser is also very outstanding, be specially: (1), because the pulse of microchip passive Q-regulaitng laser is due to passive Q-adjusted intrinsic characteristic, make this laser there is pulse energy stability poor, the unsteadiness such as pulse-interval jitter, can be larger in the capacity volume variance being exaggerated between afterpulse, be difficult to reach < 3%, and common commercial Application all needs the stability in pulse energy and pulse spacing to be better than 3%.(2), due to the spectral width of the microchip passive Q-regulaitng laser 20pm that only has an appointment, when light pulse is exaggerated in fiber amplifier, be easy to cause the nonlinear effects such as stimulated Brillouin scattering (SBS), thereby laser amplifier power is restricted, cannot obtains the Laser output of high-average power; Meanwhile, pulse duration can be proportional to laser spectroscopy width by compressed multiple, and narrow live width is unfavorable for that pulse compression element compresses light pulse.
Summary of the invention
The object of the invention is to overcome above-mentioned prior art shortcoming, a kind of laser system that produces high-average power picosecond pulse laser is provided, the advantage such as this laser has simple in structure, with low cost, and reliability is high, stable output.
Technical solution of the present invention is as follows:
A kind of device for generation of high-average power picosecond pulse laser, comprise and produce the semiconductor laser of subnanosecond to nanosecond pulse, the pulse laser modulator of warbling, solid or optical-fiber laser power amplifier, pulse shortener, described semiconductor laser is driven and is produced pulse subnanosecond to ps pulsed laser and ns pulsed laser by driving power, and spectral width is number nanometer.The pulse laser being produced by semiconductor laser has wider spectral width, modulated by pulse chirp modulator, make light pulse become chirped pulse, the pulse after modulation is amplified laser pulse through laser power amplifier again, obtains the required high-average power of application.Finally by the pulse shortener with Negative Dispersion Properties, light pulse is compressed, obtained picosecond pulsed laser.
The described pulse laser modulator of warbling, can be chirped mirror, thereby or to have self-alignment phase modulating characteristic can, by optical fiber or the optical fiber laser amplifier of optical pulse chirp modulation, can be also the nonlinear crystal with self-alignment phase modulating characteristic.
The multiple that described laser power amplifier amplifies average laser power needs to determine according to concrete application, and this amplifier can be multi-stage fiber laser amplifier, can be also one or more levels Solid State Laser amplifier.
Described laser pulse compressor can be made up of the dispersion grating pair with Negative Dispersion Properties, also can be by the dispersing prism with Negative Dispersion Properties to forming, or mix and form by dispersion grating and dispersing prism.
Technique effect of the present invention:
The present invention adopts the laser diode of high-speed driving power drives as seed light source, produces the laser pulse of subnanosecond to nanosecond.The light pulse of being sent by laser diode is modulated by pulse chirp modulator, and light pulse is modulated to chirped pulse.The light pulse of sending due to laser diode has had wider spectrum, and the modulator of therefore warbling only needs, to the light pulse modulation of warbling, can carry out broadening to spectrum again, also can not carry out broadening to spectrum.Pulse after modulation is amplified through laser power amplifier, reaches the required laser power of application.Here, laser power amplifier can adopt optical fiber laser amplifier, also can adopt Solid State Laser amplifier.Light pulse after power amplification is compressed by pulse shortener pulse-width again, determines the multiple of compression according to the light impulse length after amplifying, and finally obtains the laser pulse of picosecond width.Due to the characteristics of luminescence of laser diode, the laser spectroscopy width conventionally sending can reach 3nm, is far longer than the spectral width of the light pulse that microchip passive Q-regulaitng laser produces.Meanwhile, the energy of the pulsed light pulse that laser diode sends determines by the stability of drive circuit completely, and the interval of light pulse is also determined by the stability of drive circuit completely.And it is very ripe to the Laser Driven power supply of nanosecond pulse to produce at present subnanosecond, its stability can reach and be better than 1%; Meanwhile, because the spectral width of laser diode is wider, can effectively improve the threshold value that produces stimulated Brillouin scattering in fiber amplifier, be easy to realize high-average power output.In addition,, because spectral width is wider than the spectrum of prior art far away, be easier to realize the light pulse compression of large multiplying power.Therefore the present invention has overcome existing technical disadvantages.
Brief description of the drawings
Fig. 1 is that prior art is used the passive Q-adjusted subnanosecond laser of microchip to form schematic diagram as the picosecond laser of seed light source, wherein 1 is the passive Q-adjusted subnanosecond laser of microchip, 2 and 3 is spectrum widening device and optical fiber laser amplifier, and 4 is laser pulse compressor.
Fig. 2 is composition schematic diagram of the present invention, wherein 1 laser diode for high-speed driving circuit driving, and 2 is pulse chirp modulator, and 3 is laser power amplifier, and 4 is laser pulse compressor.
Fig. 3 is the spectral width schematic diagram of the subnanosecond pulse laser that sends of laser diode that drives of specific embodiment high speed driving power.
Fig. 4 is the burst length full width at half maximum of the subnanosecond pulse laser that sends of laser diode that drives of specific embodiment high speed driving power.
Fig. 5 is the spectral width schematic diagram through laser power amplifier afterpulse laser in specific embodiment.
Fig. 6 is the burst length full width at half maximum through pulse shortener compression afterpulse laser in specific embodiment.
Fig. 7 is specific embodiment of the invention high-average power picosecond pulse laser device composition schematic diagram.Wherein, 1 is the laser diode by high-speed driving power drives, and 2 is the modulator of warbling being made up of monomode fiber amplifier, and 3 is optical-fiber laser power amplifier, and 4 is to the pulse shortener forming by prism.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the invention will be further described, but should not limit the scope of the invention with this.
First refer to Fig. 2, Fig. 2 is the composition schematic diagram of a kind of device for generation of high-average power picosecond pulse laser of the present invention.Comprise the generation subnanosecond that driven by high-rate laser driving power to the semiconductor laser (1) of ps pulsed laser and ns pulsed laser and the pulse laser placed successively along laser direction of advance warble modulator (2), laser power amplifier (3) and laser pulse compressor (4), it is characterized in that described semiconductor laser (1) is to be driven by high-rate laser driving power, produce the laser pulse of subnanosecond to nanosecond.The described pulse laser modulator of warbling, can be chirped mirror, or have optical fiber or the optical fiber laser amplifier of self-alignment phase modulating characteristic, can be also the nonlinear crystal with self-alignment phase modulating characteristic.Described laser power amplifier can be multi-stage fiber laser amplifier, can be also one or more levels Solid State Laser amplifier.Described laser pulse compressor can be made up of the dispersion grating pair with Negative Dispersion Properties, also can be by the dispersing prism of Negative Dispersion Properties to forming, or mix and form by dispersion grating and dispersing prism.
The course of work of apparatus of the present invention:
Semiconductor laser (1) is driven and is produced subnanosecond pulse laser by high-speed driver, and pulse laser enters pulse chirp modulator (2), and laser pulse is by the modulation of warbling of pulse chirp modulator, acquisition chirped laser pulse.Pass through again laser power amplifier (3) laser is carried out to power amplification, obtain the chirped laser pulse of the subnanosecond of high-average power.Finally by laser pulse compressor (4), chirped pulse laser is compressed, by the pulse compression of subnanosecond to psec, thereby obtain picosecond Average Power Pulse laser.
Specific embodiment:
Refer to Fig. 7.Adopt the tail optical fiber output semiconductor laser (1) of peak power 2W, driven by High Speed Laser-Driver, produce pulse duration 200ps, the laser pulse of pulse repetition frequency 100kHz, pulse spectrum width is illustrated in figure 3 2.4nm, and pulse duration is illustrated in figure 4 200ps.Laser pulse enters in the monomode fiber laser amplifier (2) with self-alignment phase modulating characteristic, and average laser power will be amplified to 20mW, and laser pulse is modulated mutually and become chirped pulse due to self-alignment, and spectral width as shown in Figure 5, becomes 3nm.Pass through by Double Cladding Ytterbium Doped Fiber laser power amplifier (3), average laser power is enlarged into 10W again, and laser spectroscopy width still keeps 3nm, and laser pulse width keeps 200ps left and right substantially.Finally, by 2 prisms, the pulse shortener forming is compressed laser pulse, obtain pulse duration 16ps as shown in Figure 6, laser repetition rate 100kHz, the output of average laser power 10W.
According to the checking of above specific embodiment, the present invention can overcome the shortcoming of prior art, produces high reliability, the high-average power picosecond pulse laser of high stability.And it is low that the present invention has production cost, light path is simple and reliable, and environmental suitability is strong, pulse compression multiplying power advantages of higher.
Claims (4)
1. the device for generation of high-average power picosecond pulse laser, comprise and produce subnanosecond to the semiconductor laser (1) of ps pulsed laser and ns pulsed laser and the pulse laser placed successively along laser direction of advance warble modulator (2), laser power amplifier (3) and laser pulse compressor (4), it is characterized in that described semiconductor laser (1) is to be driven by high-rate laser driving power, produce the laser pulse of subnanosecond to nanosecond.Pulse laser enters pulse chirp modulator (2), and laser pulse, by the modulation of warbling of pulse chirp modulator, obtains chirped laser pulse.Pass through again laser power amplifier (3) laser is carried out to power amplification, obtain the subnanosecond of high-average power to the chirped laser pulse of nanosecond width.Finally by laser pulse compressor (4), chirped pulse laser is compressed, obtain picosecond Average Power Pulse laser.
2. the pulse laser according to claim 1 modulator of warbling, it can be chirped mirror, thereby or to have self-alignment phase modulating characteristic can, by optical fiber or the optical fiber laser amplifier of optical pulse chirp modulation, can be also the nonlinear crystal with self-alignment phase modulating characteristic.
3. laser power amplifier according to claim 1 (3), it is characterized in that average laser power to amplify, the multiple amplifying needs to determine according to concrete application, this amplifier can be one or more levels optical fiber laser amplifier, can be also one or more levels Solid State Laser amplifier.
4. laser pulse compressor according to claim 1 (4), it is characterized in that subnanosecond to nanosecond chirped pulse laser boil down to picosecond pulsed laser, can be formed by the dispersion grating pair with Negative Dispersion Properties, also can be by the dispersing prism with Negative Dispersion Properties to forming, or mix and form by dispersion grating and dispersing prism.
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| CN201410122645.2A CN104124607A (en) | 2014-03-28 | 2014-03-28 | Device for generating picosecond pulse laser with high average power |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105529611A (en) * | 2016-01-20 | 2016-04-27 | 中国科学院西安光学精密机械研究所 | Laser capable of generating ultra-short pulse based on Q-switched mode |
| JP2016151766A (en) * | 2015-02-18 | 2016-08-22 | トプティカ フォトニクス アクチエンゲゼルシャフトＴＯＰＴＩＣＡ Ｐｈｏｔｏｎｉｃｓ ＡＧ | Fiber transmission of short laser pulse |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060120418A1 (en) * | 2004-12-07 | 2006-06-08 | Imra America, Inc. | Yb: and Nd: mode-locked oscillators and fiber systems incorporated in solid-state short pulse laser systems |
| CN201118090Y (en) * | 2007-08-29 | 2008-09-17 | 中国工程物理研究院上海激光等离子体研究所 | Chirp pulse amplification laser apparatus |
| US20100103489A1 (en) * | 2008-10-27 | 2010-04-29 | Ondax, Inc. | Optical pulse shaping method and apparatus |
| CN102593701A (en) * | 2012-03-02 | 2012-07-18 | 陈抗抗 | Optical fiber laser with super continuous spectrum |
| CN103208728A (en) * | 2013-04-22 | 2013-07-17 | 山东海富光子科技股份有限公司 | High-power pulse per second type ytterbium-doped all-fiber laser system |
-
2014
- 2014-03-28 CN CN201410122645.2A patent/CN104124607A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060120418A1 (en) * | 2004-12-07 | 2006-06-08 | Imra America, Inc. | Yb: and Nd: mode-locked oscillators and fiber systems incorporated in solid-state short pulse laser systems |
| CN201118090Y (en) * | 2007-08-29 | 2008-09-17 | 中国工程物理研究院上海激光等离子体研究所 | Chirp pulse amplification laser apparatus |
| US20100103489A1 (en) * | 2008-10-27 | 2010-04-29 | Ondax, Inc. | Optical pulse shaping method and apparatus |
| CN102593701A (en) * | 2012-03-02 | 2012-07-18 | 陈抗抗 | Optical fiber laser with super continuous spectrum |
| CN103208728A (en) * | 2013-04-22 | 2013-07-17 | 山东海富光子科技股份有限公司 | High-power pulse per second type ytterbium-doped all-fiber laser system |
Non-Patent Citations (1)
| Title |
|---|
| 蓝信钜等: "《激光技术》", 31 January 2005, 科学出版社 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016151766A (en) * | 2015-02-18 | 2016-08-22 | トプティカ フォトニクス アクチエンゲゼルシャフトＴＯＰＴＩＣＡ Ｐｈｏｔｏｎｉｃｓ ＡＧ | Fiber transmission of short laser pulse |
| CN105529611A (en) * | 2016-01-20 | 2016-04-27 | 中国科学院西安光学精密机械研究所 | Laser capable of generating ultra-short pulse based on Q-switched mode |
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Application publication date: 20141029 |