CN104303032B - Spectroscopic sensor - Google Patents
Spectroscopic sensor Download PDFInfo
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- CN104303032B CN104303032B CN201380023122.6A CN201380023122A CN104303032B CN 104303032 B CN104303032 B CN 104303032B CN 201380023122 A CN201380023122 A CN 201380023122A CN 104303032 B CN104303032 B CN 104303032B
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- 239000000758 substrate Substances 0.000 claims abstract description 160
- 238000001514 detection method Methods 0.000 claims abstract description 109
- 230000003287 optical Effects 0.000 claims abstract description 40
- 230000001808 coupling Effects 0.000 claims description 39
- 238000010168 coupling process Methods 0.000 claims description 39
- 238000005859 coupling reaction Methods 0.000 claims description 39
- 230000005540 biological transmission Effects 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 25
- 238000009751 slip forming Methods 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 201
- 238000007792 addition Methods 0.000 description 47
- 238000001914 filtration Methods 0.000 description 26
- 230000001629 suppression Effects 0.000 description 22
- 238000004806 packaging method and process Methods 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 12
- 230000000875 corresponding Effects 0.000 description 11
- 238000009826 distribution Methods 0.000 description 11
- 230000004313 glare Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 229920005989 resin Polymers 0.000 description 10
- 239000011347 resin Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- PBCFLUZVCVVTBY-UHFFFAOYSA-N Tantalum pentoxide Chemical compound O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 229910052904 quartz Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N AI2O3 Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 210000003229 CMP Anatomy 0.000 description 3
- 229910004541 SiN Inorganic materials 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000000265 homogenisation Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- 206010024119 Left ventricular failure Diseases 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000004059 degradation Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N Silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 210000000538 Tail Anatomy 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910021418 black silicon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 230000003628 erosive Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000001678 irradiating Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002061 nanopillar Substances 0.000 description 1
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 230000002093 peripheral Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000003252 repetitive Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000005315 stained glass Substances 0.000 description 1
- 200000000009 stenosis Diseases 0.000 description 1
- 230000036262 stenosis Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Abstract
Spectroscopic sensor (1A) includes interference filter portion (20A), light detection substrate (30A) and dividing plate (15).Interference filter portion (20A) has cavity layer (21) and across relative the 1st and the 2nd mirror layer (22,23) of cavity layer (21), optionally makes the light of wave-length coverage of regulation from the 1st mirror layer (22) side through to the 2nd mirror layer (23) side according to incoming position.Light detection substrate (30A) has and has passed through the light in interference filter portion (20A) and carry out the sensitive surface (32a) of incidence, detects the light inciding sensitive surface (32a).Dividing plate (15) arrives at least one party of the 1st and the 2nd mirror layer (22,23) from cavity layer (21), separates optical to interference filter portion (20A) in the case of observing from the direction of the regulation intersected with sensitive surface (32a).
Description
Technical field
The present invention relates to a kind of spectroscopic sensor.
Background technology
As existing spectroscopic sensor, it is known to have the light selectivity of the wave-length coverage making regulation according to incoming position
The optical lightscreening portion that passes through and the spectroscopic sensor of light detection substrate that the light having passed through optical lightscreening portion is detected.Example
As, in the spectroscopic sensor described in patent documentation 1, detect between substrate or relative to light in optical lightscreening portion and light
Learn light incident side configuration FOP (Fiber Optic Plate (fibre optic plate)) of the light in optical filtering portion.It addition, described in patent documentation 2
Spectroscopic sensor in, detect at optical lightscreening portion and light and be provided with the angle limits of the angle of incidence limiting light between substrate and filter
Device.
Prior art literature
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 6-129908 publication
Patent documentation 2: Japanese Unexamined Patent Publication 2011-203247 publication
Summary of the invention
Invent technical problem to be solved
In the spectroscopic sensor described in patent documentation 1, detect in optical lightscreening portion and light and be configured with FOP between substrate
Spectroscopic sensor or patent documentation 2 described in spectroscopic sensor in, it is possible to seek optical lightscreening portion and light detection substrate it
Between region in the suppression of crosstalk of light.It addition, in the spectroscopic sensor described in patent documentation 1, relative to optics
The light incident side of the light in optical filtering portion is configured with in the spectroscopic sensor of FOP, is incided the incidence of the light in optical lightscreening portion by restriction
Angle such that it is able to seek the suppression of the crosstalk of light in optical lightscreening portion.But, for these spectroscopic sensors, optics
The suppression of the crosstalk of the light in optical filtering portion is insufficient, its result, exist light detection substrate sensitive surface regulation position on
The wave-length coverage of the light detected broadens or stray light component become wait more, problem that light-filtering characteristic deteriorates.
Therefore, it is an object of the invention to provide the spectroscopic sensor of a kind of raising that can seek light-filtering characteristic.
The technological means of solution problem
The spectroscopic sensor of the present invention includes: interference filter portion, its have cavity layer and across cavity layer relative the 1st and
2 mirror layer, optionally make the light of the wave-length coverage of regulation pass through to the 2nd mirror layer side from the 1st mirror layer side according to incoming position；Light is examined
Surveying substrate, it has and has passed through the light in interference filter portion and carry out the sensitive surface of incidence, detects the light inciding sensitive surface；
And dividing plate, it arrives at least one party of the 1st and the 2nd mirror layer from cavity layer, from the observation of the direction of the regulation intersected with sensitive surface
In the case of, separate optical for interference filter portion.
In this spectroscopic sensor, in the case of observing from the direction of the regulation intersected with sensitive surface, interference filter portion
By dividing plate optical separate, this dividing plate from cavity layer arrive the 1st and the 2nd mirror layer at least one party.Thus, such as, though not with
Dividing plate uses the structure of the angle of incidence for limiting the light inciding interference filter portion dividually, in cavity layer, also inhibits light
To the propagation in the direction parallel with sensitive surface, it is possible to the suppression of the crosstalk of the light sought fully in interference filter portion.And
And, limited the angle of incidence of the light of the sensitive surface inciding light detection substrate by dividing plate, thus it is possible to make light precision well
Incide the position of the regulation of the sensitive surface corresponding with the incoming position in interference filter portion.Therefore, according to this spectroscopic sensor, energy
Enough seek the raising of light-filtering characteristic.
Here, dividing plate can also at least arrive the 2nd mirror layer from cavity layer.According to this structure, it is possible to suppression the 2nd mirror layer and light inspection
Survey the multipath reflection of the light between the sensitive surface of substrate and do the generation of caused veiling glare, it is possible to seeking light-filtering characteristic
Further improve.
Further, dividing plate can also arrive the both sides of the 1st and the 2nd mirror layer from cavity layer.According to this structure, it is possible to suppression the 2nd mirror
The multipath reflection of the light between the sensitive surface of layer and light detection substrate and the generation of dry caused veiling glare, in addition,
Owing to cavity layer is reliably separated by dividing plate, thus it is possible to the crosstalk of the light more fully sought in dry optical filtering portion
Suppression.
It addition, spectroscopic sensor can also be also equipped with: the 1st coupling layer, it is arranged in interference filter portion and light detection substrate
Between, making to march to the light transmission of light detection substrate from interference filter portion, dividing plate arrives the 1st coupling layer via the 2nd mirror layer.Root
According to this structure, it is possible to the multipath reflection of the light between the sensitive surface of suppression the 2nd mirror layer and light detection substrate and dry caused
The generation of veiling glare, in addition, the angle of incidence of the light inciding the sensitive surface of light detection substrate is more entered one by dividing plate
Step limits, thus it is possible to make light more precision incide the sensitive surface corresponding with the incoming position in interference filter portion well
The position of regulation.
It addition, spectroscopic sensor can also also include making to incide the light transmission in interference filter portion light transmission substrate, with
And it is arranged between light transmission substrate and interference filter portion and makes to march to the light transmission in interference filter portion from light transmission substrate
2nd coupling layer, dividing plate arrives the 2nd coupling layer via the 1st mirror layer.According to this structure, limited by dividing plate and incide interference filter
The angle of incidence of the light in light portion, it is possible to the suppression of the crosstalk of the light more fully sought in interference filter portion.
Now, cavity layer and the 2nd coupling layer can also be constructed from the same material.According to this structure, it is possible to be easily achieved chamber
Layer and the lamination process of the 2nd coupling layer.It addition, in the case of such as dividing plate being set by dry-etching, it is possible to make etching gas
The condition of body etc. is identical, therefore, it is possible to realize the dividing plate that form accuracy is high.It addition, refractive index is identical, so also being able to obtain surely
Fixed light-filtering characteristic.Further, the homogenization of the collimation property of the dividing plate of the angle of incidence for limiting light can be sought.Additionally, institute
Call identical, refer to not only include identical situation but also be included in situation roughly the same in the range of foozle etc..
It addition, the distance on the direction of regulation between the 1st mirror layer and the 2nd mirror layer can also be changed, being subject to of dividing plate
Distance on the direction of the regulation between end and the sensitive surface of bright finish side is fixed, the end with sensitive surface opposition side of dividing plate and
Distance on the direction of the regulation between sensitive surface is fixed.According to this structure, it is possible to seek angle of incidence for limiting light every
The homogenization of the collimation property of plate.Additionally, so-called fixing, refer to the situation not only including being completely fixed but also be included in manufacture by mistake
Situation approximately fixed in the range of difference etc..
It addition, in the case of observing from the direction of regulation, dividing plate can also extend in the way of passing across sensitive surface.Root
According to this structure, it is possible to (that is, wave-length coverage is narrow and spuious for the light detected in the whole region of sensitive surface by suitably light splitting
The light that light component is few).
It addition, spectroscopic sensor can also be also equipped with: antireflection film, it is arranged in interference filter portion and light detection substrate
Between, prevent from inciding the reflection of the light of sensitive surface.Or, can also on the surface of the side, interference filter portion of light detection substrate
Implement to prevent the reflection inciding the reflection of the light of sensitive surface from preventing from processing.According to these structures, it is possible to suppression the 2nd mirror layer and light
The multipath reflection of the light between the sensitive surface of detection substrate and the generation of dry caused veiling glare, it is possible to seek light-filtering characteristic
Further raising.
It addition, the direction of regulation can also be the direction vertical with sensitive surface.According to this structure, it is possible to make spectroscopic sensor
Structure simplify.
The effect of invention
In accordance with the invention it is possible to provide the spectroscopic sensor of a kind of raising that can seek light-filtering characteristic.
Accompanying drawing explanation
Fig. 1 is the longitudinal section of the spectroscopic sensor of the 1st embodiment of the present invention.
Fig. 2 is the partial section view of the II-II line along Fig. 1.
Fig. 3 is the amplification longitudinal section of the peripheral part of the gasket part of the spectroscopic sensor of Fig. 1.
Fig. 4 is the amplification longitudinal section of the middle body in the interference filter portion of the spectroscopic sensor of Fig. 1.
Fig. 5 is the figure of the relation of the pixel of the light accepting part in the spectroscopic sensor representing Fig. 1 and dividing plate.
Fig. 6 is the longitudinal section of the manufacture method of the spectroscopic sensor for explanatory diagram 1.
Fig. 7 is the longitudinal section of the manufacture method of the spectroscopic sensor for explanatory diagram 1.
Fig. 8 is the longitudinal section of the manufacture method of the spectroscopic sensor for explanatory diagram 1.
Fig. 9 is the longitudinal section of the manufacture method of the spectroscopic sensor for explanatory diagram 1.
Figure 10 is the longitudinal section of the manufacture method of the spectroscopic sensor for explanatory diagram 1.
Figure 11 is the longitudinal section of the manufacture method of the spectroscopic sensor for explanatory diagram 1.
Figure 12 is the longitudinal section of the variation of the spectroscopic sensor of Fig. 1.
Figure 13 is the longitudinal section of the variation of the spectroscopic sensor of Fig. 1.
Figure 14 is the longitudinal section of the spectroscopic sensor of the 2nd embodiment of the present invention.
Figure 15 is the longitudinal section of the variation of the spectroscopic sensor of Figure 14.
Figure 16 is the light during bright line representing and spectroscopic sensor irradiating 820nm, 860nm, 900nm, 940nm, 980nm
The chart of the relation of wavelength and the signal intensity from spectroscopic sensor output.
Detailed description of the invention
Hereinafter, referring to the drawings, being preferred embodiment described in detail the present invention.Further, in the various figures, right
Same or equivalent part mark same-sign, the repetitive description thereof will be omitted.
[the 1st embodiment]
As it is shown in figure 1, the spectroscopic sensor 1A of the 1st embodiment include interference filter portion 20A, light detection substrate 30A and
Storage interference filter portion 20A and the packaging body (package) 2 of light detection substrate 30A.Packaging body 2 is formed as long by resin etc.
Cube box like, side (detecting the light incident side of the light of substrate 30A relative to interference filter portion 20A and light) in the height direction
Opening.Additionally, in the following description, the length direction of packaging body 2 is set to X-direction, the width of packaging body 2 is set
For Y direction, the short transverse of packaging body 2 is set to Z-direction.
Light detection substrate 30A is fixed on diapire 2a in packaging body 2.Interference filter portion 20A is via the 1st coupling layer 3
And be engaged on light detection substrate 30A.1st coupling layer 3 detects between substrate 30A at interference filter portion 20A and light, makes from dry
Relate to the light transmission that optical filtering portion 20A advances to light detection substrate 30A.Interference filter portion 20A is formed with protecting film 5.As one
Individual example, the 1st coupling layer 3 is for by employing TEOS (Tetraethyl Orthosilicate (orthosilicic acid as unstrpped gas
Tetra-ethyl ester), Tetraethoxysilane (tetraethoxysilance)) film forming process formed silicon oxide layer, its thickness is tens of nm
～about tens of μm.It addition, protecting film 5 is by SiO2Deng composition, its thickness is tens of nm～about tens of μm.
Light detection substrate 30A is to have the rectangular plate-like with X-direction as long side direction and with Z-direction as thickness direction
The semiconductor light-receiving device of semiconductor substrate 31.In semiconductor substrate 31, the part at the surface 31a comprising side is formed
There is light accepting part 32.Light accepting part 32 is that the photodiode of the wire extended in the Y-axis direction is along X-direction one dimensional arrangement
Photodiode array.Light accepting part 32 has and has passed through the light of interference filter portion 20A and carry out the sensitive surface 32a of incidence, and light detects
The light that substrate 30A is configured to inciding sensitive surface 32a detects.As an example, the thickness of semiconductor substrate 31
For about tens of μm～hundreds of μm.It addition, a length of hundred μm of the X-direction of light accepting part 32～tens of about mm, light accepting part 32
The width of Y direction be number μm～tens of about mm.Additionally, light detection substrate 30A can also be other semiconductor light-receiving
Element (C-MOS imageing sensor, ccd image sensor, infrared imaging sensor etc.).
It is formed with the pad for the distribution 33 to the light accepting part 32 input and output signal of telecommunication at the surface 31a of semiconductor substrate 31
Sheet (pad) portion 33a.Further, be formed anti-in the way of covering light accepting part 32 and distribution 33 at the surface 31a of semiconductor substrate 31
Penetrate and prevent film 34, antireflection film 34 is formed with the surface of 20A side, interference filter portion by CMP (Chemical
Mechanical Polishing (chemically mechanical polishing)) and the planarization layer 35 that has been flattened.Antireflection film 34 is dry
Prevent from inciding the reflection of the light of sensitive surface 32a between optical filtering portion 20A and light detection substrate 30A.As an example, reflection
Prevent film 34 for by Al2O3、TiO2、Ta2O5、SiO2、SiN、MgF2Deng monofilm or the stacked film of composition, its thickness is tens of
About nm～tens of μm.It addition, planarization layer 35 is by SiO2Deng composition, its thickness is tens of nm～about tens of μm.
Interference filter portion 20A have chamber (cavity) layer 21 and across relative the 1st and the 2nd mirror layer 22 of cavity layer 21,
23.Interference filter portion 20A be the light of the wave-length coverage optionally making regulation according to incoming position from the 1st mirror layer 22 side through to
The LVF (Linear Variable Filter (linear variable filter)) of the 2nd mirror layer 23 side.As an example, cavity layer 21
Silicon oxide layer (the SiO formed for the thermal oxidation by silicon2Film), its thickness is tens of nm～about tens of μm.It addition,
Each mirror layer 22,23 is by Si, Ge, SiN, SiO2、TiO2、Ta2O5、Nb2O5、Al2O3、MgF2Deng multilayer dielectric film constitute
DBR (Distributed Bragg Reflector (distributed Blatt reflective)) layer, its thickness is tens of nm～tens of μm is left
Right.
As depicted in figs. 1 and 2, interference filter portion 20A includes the 1st filtered region the 24 and the 2nd filtered region 25.1st filter
Light region 24 is in the case of observing from Z-direction (direction vertical with sensitive surface 32a), with the sensitive surface of light detection substrate 30
32a is corresponding.That is, the 1st filtered region 24 and sensitive surface 32a are formed as their Yi Fangbao in the case of observing from Z-direction
(including the situation that at least one party of the length of X-direction and the width of Y direction is the most equal) containing the opposing party.From Z axis side
In the case of observing, the 2nd filtered region 25 surrounds the 1st filtered region 24 with ring-type (here, rectangular ring).
As it is shown in figure 1, the surface 21a of cavity layer 21 in the 1st filtered region 24 is parallel with X/Y plane.On the other hand, the 1st filter
The back side 21b of the cavity layer 21 in light region 24 is with one end 21c and the back side 21b in X-direction of the back side 21b in X-direction
Other end 21d compare the mode phase closer to the plane (such as, the surface 31a of semiconductor substrate 31) comprising sensitive surface 32a
X/Y plane is tilted.As an example, the thickness of the cavity layer 21 in the 1st filtered region 24 is towards the side in X-direction
It is gradually increased in the range of about tens of nm～number μm.
The surface 21a of the cavity layer 21 in the 2nd filtered region 25 is parallel with X/Y plane with back side 21b.From comprising sensitive surface 32a
Plane Z-direction to the surface 21a of the cavity layer 21 in the 2nd filtered region 25 on distance (following, be only referred to as
" distance in Z-direction " is referred in the case of " distance "), and from comprising the plane of sensitive surface 32a in the 1st filtered region 24
Cavity layer 21 surface 21a till distance equal.On the other hand, from comprising the plane of sensitive surface 32a to the 2nd filtered region 25
In cavity layer 21 back side 21b till distance, and from comprising the plane of sensitive surface 32a to the cavity layer in the 1st filtered region 24
Distance till the other end 21d of the back side 21b of 21 is equal.
As previously discussed, cavity layer 21, throughout the 1st filtered region the 24 and the 2nd filtered region 25, is continuously formed.Further, the 1st
The surface 21a of the cavity layer 21 in filtered region the 24 and the 2nd filtered region 25 becomes the same face.On the other hand, at the 1st filtered region
It is formed between the back side 21b of the cavity layer 21 in the back side 21b of the cavity layer 21 in 24 and the 2nd filtered region 25 and has at one end
21c becomes the step difference of maximum and become minimum (being 0 at this) at other end 21d height.Additionally, in the chamber of other end 21d
The thickness of layer 21 is about 500nm.
It addition, the 1st mirror layer 22 is continuously formed at the table of cavity layer 21 throughout the 1st filtered region the 24 and the 2nd filtered region 25
Face 21a.On the other hand, the 2nd mirror layer 23 is continuously formed at cavity layer 21 throughout the 1st filtered region the 24 and the 2nd filtered region 25
The vertical face (erecting face) of back side 21b and step difference.Further, in the 1st filtered region 24, between the 1st mirror layer the 22 and the 2nd mirror layer 23
Distance be changed.It addition, in the 2nd filtered region 25, the distance between the 1st mirror layer the 22 and the 2nd mirror layer 23 is fixed.
As depicted in figs. 1 and 2, gasket part 33a of the distribution 33 that light detection substrate 30A is had is to observe from Z-direction
Time be contained in the mode of the 2nd filtered region 25 and be formed multiple on the surface 31a of semiconductor substrate 31.More particularly, pad
Each of two end regions of sheet portion 33a surface 31a in the X-axis direction is set side by side with multiple along Y direction.Such as Fig. 1 and
Shown in Fig. 3, at the 2nd filtered region 25, it is formed with multiple for making gasket part 33a expose to outside for each gasket part 33a
Through hole 6.Each through hole 6 is along the through antireflection film of Z-direction 34, planarization layer the 35, the 1st coupling layer the 3, the 2nd filtered region
25 (that is, cavity layer the 21 and the 1st and the 2nd mirror layer 22,23) and protecting film 5, the part making gasket part 33a (can also be complete
Portion) expose to outside.Additionally, in Fig. 1 and Fig. 3, aspect ratio is different, but this is the thickness in order to emphasize each layer in FIG, with
Fig. 1 compares Fig. 3 closer to actual aspect ratio.Additionally, in the structure of Fig. 1～Fig. 3, the edge of opening of antireflection film 34 with
The edge of opening of other layer (planarization layer the 35, the 1st coupling layer the 3, the 2nd filtered region 25 and protecting film 5) is compared and is more positioned at
Outside, but in the case of observing from Z-direction, the edge of opening of antireflection film 34 can also be in opening of the layer with other
The position that mouth edge is identical.
In each gasket part 33a, connect live wire (wire) 7 via through hole 6.As an example, electric wire 7 is by Au structure
Becoming, pearl (ball) the portion 7a of its one end is endowed ultrasonic activation and is hot pressed the surface receiving gasket part 33a.In order to
Prevent from, due to the contact of pearl portion 7a, the 2nd filtered region 25 etc. is caused damage, set between the inner face and pearl portion 7a of through hole 6
It is equipped with gap.The other end of electric wire 7 is via the diapire 2a of packaging body 2 and the pad of installation with the outside being arranged on diapire 2a
Portion 8 connects.
As shown in Figure 1 and Figure 4, at interference filter portion 20A, the dividing plate 15 extended in the Y-axis direction is one-dimensional along X-direction
Ground arrangement.Dividing plate 15 has light absorption, light reflective or light-proofness, in the case of observing from Z-direction, interference is filtered
1st filtered region 24 of light portion 20A separates optically.As an example, dividing plate 15 is by W, Al, Cu, Si, light absorption tree
Fat etc. are constituted.It addition, the width in the X-direction of each dividing plate 15 is for counting about μm～tens of μm, in the Z-direction of each dividing plate 15
Height be about 1 μm～hundreds of μm, (aspect) the in length and breadth ratio in the cross section (cross section parallel with ZX plane) of each dividing plate 15 is 1
～hundreds of left and right.
In the case of observing from Z-direction, each dividing plate 15 is to pass across the side of the sensitive surface 32a of light detection substrate 30A
Formula extends.Extending in the way of passing across sensitive surface 32a if as discussed above, the most each dividing plate 15 can arrive spectroscopic sensor 1A
Side, it is also possible to do not arrive the side of spectroscopic sensor 1A.Each dividing plate 15 arrives protection from cavity layer 21 via the 1st mirror layer 22
The surface 5a of film 5.On the other hand, each dividing plate 15 arrives planarization layer from cavity layer 21 via the 2nd mirror layer 23 and the 1st coupling layer 3
The midway of 35.Further, each dividing plate 15 and distance between the end 15a and sensitive surface 32a of sensitive surface 32a opposition side fix.
Equally, the distance between the end 15b and sensitive surface 32a of the sensitive surface 32a side of each dividing plate 15 is fixed.Additionally, each dividing plate 15
End 15b can also be positioned at back side 34b and the interface of sensitive surface 32a of antireflection film 34.
In the spectroscopic sensor 1A constituted as previously discussed, if light incides encapsulation via the opening of packaging body 2
In body 2, then this light transmission protecting film 5 incide the 1st filtered region 24 of interference filter portion 20A, make rule according to incoming position
The light of fixed wave-length coverage selectively passes through.Then, light transmission the 1st coupling layer 3 of the 1st filtered region 24, smooth has been passed through
Change layer 35 and antireflection film 34, incide the sensitive surface 32a of light detection substrate 30A.Now, light detection substrate 30A is incided
The wavelength of light of each passage of light accepting part 32, according to the thickness of the cavity layer 21 on incoming position and the 1st and the 2nd mirror layer 22,
The material of 23 and thickness, uniquely determined.Thus, in light detection substrate 30A, different at each Air conduct measurement of light accepting part 32
The light of wavelength.
As described above, in spectroscopic sensor 1A, in the case of observing from Z-direction, interference filter portion
1st filtered region 24 of 20A is separated by optical by dividing plate 15, dividing plate 15 from cavity layer 21 arrive the 1st and the 2nd mirror layer 22,
The both sides of 23.Thus, such as, even if not using dividually with dividing plate 15 for limiting the light inciding interference filter portion 20A
The structure of angle of incidence, it is also possible to light is to the propagation of X-direction in cavity layer 21, thus it is possible to seek dry filter fully in suppression
The suppression of the crosstalk of the light in light portion 20A.Further, dividing plate 15 arrives the 2nd mirror layer 23, thus it is possible to suppression the 2nd mirror layer 23 and light
The multipath reflection of the light between the sensitive surface 32a of detection substrate 30A and the generation of dry caused veiling glare.And, pass through
Dividing plate 15 limits the angle of incidence of the light of the sensitive surface 32a inciding light detection substrate 30A, thus it is possible to make light precision well
Incide the position of the regulation of the sensitive surface 32a corresponding with the incoming position of interference filter portion 20A.Therefore, sense according to light splitting
Device 1A, it is possible to seek the raising of light-filtering characteristic.It addition, by limiting angle of incidence, incide the light of interference filter portion 20A close to accurate
Direct light, therefore, it is possible to make that interference filter portion 20A's is sharp (sharp) further through characteristic.
It addition, in spectroscopic sensor 1A, such as, incide interference filter using dividually with dividing plate 15 for restriction
In the case of the structure of the angle of incidence of the light of portion 20A, it is possible to suppression in cavity layer 21 light to the propagation of X-direction.So, it is not required to
The structure of angle of incidence for limiting the light inciding interference filter portion 20A is used dividually, it is possible to seek point with dividing plate 15
The slimming of optical sensor 1A and cost degradation.
It addition, dividing plate 15 arrives the 1st coupling layer 3 via the 2nd mirror layer 23 (in spectroscopic sensor 1A, arrives light detection
On the sensitive surface 32a of substrate 30A).Thereby, it is possible to the multipath reflection of the light between suppression the 2nd mirror layer 23 and sensitive surface 32a is with dry
The generation of caused veiling glare, in addition, further limits the entering of light inciding sensitive surface 32a by dividing plate 15
Firing angle, thus it is possible to make light more precision incide the sensitive surface corresponding with the incoming position of interference filter portion 20A well
The position of the regulation of 32a.
It addition, the distance between the 1st mirror layer the 22 and the 2nd mirror layer 23 is changed, in contrast, the end 15a of dividing plate 15
And light detection substrate 30A sensitive surface 32a between distance and the end 15b of dividing plate 15 and light detection substrate 30A light
Distance between the 32a of face is fixed respectively.Thereby, it is possible to seek the equal of the collimation property of the dividing plate 15 of the angle of incidence for limiting light
Homogenize.
It addition, in the case of observing from Z-direction, dividing plate 15 is to pass across the sensitive surface 32a's of light detection substrate 30A
Mode extends.Thereby, it is possible to the light detected in the whole region of sensitive surface 32a by suitably light splitting (that is, wave-length coverage is narrow
The light that narrow and stray light component is few).
It addition, detect between substrate 30A at interference filter portion 20A and light, it is configured with and prevents from inciding light detection substrate 30A
The antireflection film 34 of reflection of light of sensitive surface 32a.This structure also contributes between the 2nd mirror layer 23 and sensitive surface 32a
The suppression of the generation of the multipath reflection of light and dry caused veiling glare and the raising of light-filtering characteristic.
Here, the restriction to the angle of incidence of the light obtained by dividing plate 15 illustrates.As shown in Figure 4, by adjacent dividing plate
15, the distance between 15 is set to d, when the height of dividing plate 15 is set to h, it is possible to by the incidence of the light between adjacent dividing plate 15,15
The maximum of angle θ (angle of incidence in ZX plane) is represented by following formula (1).Thereby, it is possible to according to the incidence angle θ that can allow
Maximum, set dividing plate 15 aspect ratio etc..
θ=90 °-tan-1(h/d)=tan-1(d/h)···(1)
Additionally, dividing plate 15, can be formed as shown in (a) of Fig. 5 in the light accepting part 32 of light detection substrate 30A with adjacent
Pixel 37,37 between region corresponding, it is also possible to be formed as in addition to this region as shown in (b) of Fig. 5, at least one with
Each pixel 37 is corresponding.In the case of (a) of Fig. 5, it is possible to the light reception sensitivity in suppression light accepting part 32 reduces.On the other hand,
In the case of (b) of Fig. 5, the adjacent distance between dividing plate 15,15 diminishes, even if so reducing the height of dividing plate 15, also can
Enough suppression can become big (with reference to above-mentioned formula (1)) by the maximum of the angle of incidence of the light between adjacent dividing plate 15,15.
Then, the manufacture method of above-mentioned spectroscopic sensor 1A is illustrated.Additionally, following each operation, can make
Implement with the wafer being formed with multiple parts corresponding with spectroscopic sensor 1A, in this case, finally, sense by light splitting
Wafer is cut by device 1A, and monolithic chemical conversion is bonded to the light detection substrate 30A of interference filter portion 20A.
First, as shown in (a) of Fig. 6, an interarea 50a and another interarea 50b of silicon substrate 50 is implemented thermal oxide
Process, form silicon oxide layer 52 at the interarea 51a and another interarea 51b that process substrate 51 being made up of silicon, will be at place
The silicon oxide layer 52 that one interarea 51a or another interarea 51b of reason substrate 51 is formed is as surface layer 53.Here, will be at place
The silicon oxide layer 52 that one interarea 51a of reason substrate 51 is formed is as surface layer 53.
Then, as shown in (b) of Fig. 6, painting erosion resistant agent layer 54 on surface layer 53, as shown in (a) of Fig. 7, in order to logical
Overetch forms cavity layer 21 and patterns resist layer 54.Then, as shown in (b) of Fig. 7, with resist layer 54 for covering
Film, by being etched the surface layer 53 being arranged on process substrate 51 (eat-back), thus forms cavity layer 21.
Then, as shown in (a) of Fig. 8, cavity layer 21 forms the 2nd mirror layer 23.Formed 2 mirror layer 23 time, by from
Sub-plating method, vapour deposition method, sputtering method etc. carry out film forming.It addition, as required, photoetching and stripping or etching is utilized to carry out pattern
Change.Then, as shown in (b) of Fig. 8, in the way of covering the 2nd mirror layer 23, form silicon oxide layer, make its surface smooth by CMP
Change and form the 1st coupling layer 3.
Then, as shown in (a) of Fig. 9, on the bonding (surface directly on a surface of the planarization layer 35 of light detection substrate 30A
Activation joint etc.) surface of the 1st coupling layer 3.Then, as shown in (b) of Fig. 9, by implement grinding, grind, etching etc., will
Silicon oxide layer 52 and process substrate 51 remove.
Then, as shown in (a) of Figure 10, in the cavity layer 21 exposed by process substrate 51 is removed, by with the 2nd
Method formation the 1st mirror layer 22 that mirror layer 23 is same.Thus, the 1st mirror layer 22 is relative across cavity layer 21 with the 2nd mirror layer 23, is formed
Interference filter portion 20A.Then, as shown in (b) of Figure 10, the 1st mirror layer 22 forms protecting film 5.
Then, as shown in (a) of Figure 11, to the light detection part corresponding with gasket part 33a of substrate 30A and should be formed every
The part of plate 15 implements etching, thus forms through hole 6 and slit 16.Now, the surface of protecting film 5 is also etched, but passes through
Assume that these are to the thickness setting protecting film 5 such that it is able to prevent the 1st mirror layer 22 grade from sustaining damage due to etching.
Then, as shown in (b) of Figure 11, the material of light absorption, light reflective or light-proofness is filled into slit 16
Inside form dividing plate 15, as desired by CMP, the surface of protecting film 5 and the end of dividing plate 15 are planarized.Additionally, also
Dividing plate 15 can be formed by the material of light absorption, light reflective or light-proofness being coated in the inner face of slit 16.
Then, as it is shown in figure 1, the light being bonded to interference filter portion 20A is detected substrate 30A be fixed on the end of packaging body 2
Wall 2a.Then, via through hole 6 one end of electric wire 7 is connected to gasket part 33a, and via the diapire 2a of packaging body 2 by electricity
The other end of line 7 is connected to gasket part 8, it is thus achieved that spectroscopic sensor 1A.
Additionally, in the spectroscopic sensor 1A of the 1st embodiment, as shown in figure 12, the opening at packaging body 2 can also be pacified
Dress light transmission substrate 11.As an example, light transmission substrate 11 is made up of glass etc., and its thickness is hundreds of μm～a number mm left side
Right.It addition, at least one party at the surface 11a or back side 11b of light transmission substrate 11 can also form optical filter layer 4.As
One example, optical filter layer 4 is multilayer dielectric film or organic chromatic filter (colored resist), and its thickness is tens of nm
～about tens of μm.Further, as the material of light transmission substrate 11, it is possible to use make the light transmission of the wave-length coverage of regulation
Coloured glass or wave filter glass.
It addition, as shown in figure 13, the light transmission substrate 11 being formed with optical filter layer 4 can also pass through optical resin material
17 and be engaged on protecting film 5.Further, in the light detection substrate 30A and the interference filter portion 20A sidewall with packaging body 2
The resin material 12 of light absorption can also be filled with between face.According to this structure, it is possible to more reliably prevent noise light from entering
Enter in the 1st filtered region 24.It addition, in all of mode of spectroscopic sensor 1A, it is also possible to it is formed without protecting film 5.
Additionally, packaging body 2 can not also possess sidewall, such as, can also be that light detection substrate is installed on PC substrate etc.
30A, uses light transmission resin etc. the SMD (Surface Mount Device (surface-mount devices)) sealed by compression mod
The mode of packaging body.
[the 2nd embodiment]
As shown in figure 14, the spectroscopic sensor 1B of the 2nd embodiment, mainly it is being configured to CSP (Chip Size
Package (chip size packages)) aspect, different from the spectroscopic sensor 1A of the 1st embodiment being configured to SMD.Below,
By with the difference of the spectroscopic sensor 1A of the 1st embodiment centered by, the spectroscopic sensor 1B of the 2nd embodiment is said
Bright.
In spectroscopic sensor 1B, the light accepting part 32 of light detection substrate 30B is formed on semiconductor substrate 31 and comprises
The part of surface 31A.At semiconductor substrate 31, as the distribution 33 to the light accepting part 32 input and output signal of telecommunication, it is formed
Surface distribution 33b, through distribution 33c and back side distribution 33d, distribution 33d overleaf, be provided with the salient pole that surface is installed
36。
In spectroscopic sensor 1B, interference filter portion 20B is formed on light detection substrate 30B's via the 1st coupling layer 3
On antireflection film 34.Interference filter portion 20B has cavity layer 21 and across relative the 1st and the 2nd mirror layer 22,23 of cavity layer 21.
Interference filter portion 20B is that the light of the wave-length coverage optionally making regulation according to incoming position passes through to the 2nd from the 1st mirror layer 22 side
The LVF of mirror layer 23 side.
Interference filter portion 20B has the 1st filtered region the 24 and the 2nd filtered region 25.In situation about observing from Z-direction
Under, the 1st filtered region 24 is corresponding with the sensitive surface 32a of light detection substrate 30B.In the case of observing from Z-direction, the 2nd filter
Light region 25 is with ring-type encirclement the 1st filtered region 24.
The surface 21a of the cavity layer 21 in the 1st filtered region 24 is with one end 21e of the surface 21a in X-direction and X-axis side
The other end 21f of surface 21a upwards compares the mode more left from the plane comprising sensitive surface 32a and inclines relative to X/Y plane
Tiltedly.On the other hand, the back side 21b of the cavity layer 21 in the 1st filtered region 24 is parallel with X/Y plane.
The surface 21a of the cavity layer 21 in the 2nd filtered region 25 is parallel with X/Y plane with back side 21b.From comprising sensitive surface 32a
Plane distance to the surface 21a of the cavity layer 21 in the 2nd filtered region 25, with from comprise the plane of sensitive surface 32a to
Distance till the other end 21f of the surface 21a of the cavity layer 21 in the 1st filtered region 24 is equal.On the other hand, from comprising light
The plane of face 32a distance to the back side 21b of the cavity layer 21 in the 2nd filtered region 25, and from comprising the flat of sensitive surface 32a
Face distance to the back side 21b of the cavity layer 21 in the 1st filtered region 24 is equal.
As previously discussed, cavity layer 21 is continuously formed throughout the 1st filtered region the 24 and the 2nd filtered region 25.Further,
Between the surface 21a of the cavity layer 21 in the surface 21a of the cavity layer 21 in 1 filtered region 24 and the 2nd filtered region 25, it is formed with tool
At one end 21e is had to become the step difference of maximum and become minimum (being 0 at this) at other end 21f height.On the other hand, the 1st
The back side 21b of the cavity layer 21 in filtered region the 24 and the 2nd filtered region 256 becomes the same face.
It addition, the 1st mirror layer 22 is continuously formed at the table of cavity layer 21 throughout the 1st filtered region the 24 and the 2nd filtered region 25
Face 21a and the vertical face of step difference.On the other hand, the 2nd mirror layer 23 is throughout the 1st filtered region the 24 and the 2nd filtered region 25 continuously
It is formed at the back side 21b of cavity layer 21.Further, in the 1st filtered region 24, the distance between the 1st mirror layer the 22 and the 2nd mirror layer 23 is entered
Row change.It addition, in the 2nd filtered region 25, the distance between the 1st mirror layer the 22 and the 2nd mirror layer 23 is fixed.
In spectroscopic sensor 1B, 11b is formed with the light transmission substrate 11 of optical filter layer 4 via the 2nd coupling overleaf
Layer 9 and be engaged on interference filter portion 20B.Light transmission substrate 11 makes to incide the light transmission of interference filter portion 20B.2nd coupling
Close layer 9 between light transmission substrate 11 and interference filter portion 20B, make to advance to interference filter portion 20B from light transmission substrate 11
Light transmission.2nd coupling layer 9 is made up of the material identical with cavity layer 21.As an example, the 2nd coupling layer 9 is by as former
Material gas employs the silicon oxide layer that the film forming process of TEOS is formed, and its thickness is tens of nm～about tens of μm.
In spectroscopic sensor 1B, each dividing plate 15 arrives in the 2nd coupling layer 9 via the 1st mirror layer 22 from cavity layer 21.Another
Aspect, each dividing plate 15 arrives the back side (surface of sensitive surface 32a side) of the 1st coupling layer 3 from cavity layer 21 via the 2nd mirror layer 23
(that is, on antireflection film 34).Further, the distance between the end 15a and sensitive surface 32a of each dividing plate 15 is fixed.Equally, respectively every
Distance between the end 15b and sensitive surface 32a of plate 15 is fixed.
In the spectroscopic sensor 1B constituted as previously discussed, if light incides light transmission substrate 11, then passing through
The light of light transmission substrate 11 only should incide the light of the wave-length coverage of the regulation of the 1st filtered region 24 of interference filter portion 20B
Passed through by optical filter layer 4.Pass through light transmission the 2nd coupling layer 9 of optical filter layer 4 and incide the 1st filtered region 24, root
The light of the wave-length coverage of regulation is selectively passed through according to incoming position.Then, passed through the light of the 1st filtered region 24, through the 1st
Coupling layer 3 and antireflection film 34, incide the sensitive surface 32a of light detection substrate 30B.Now, light detection substrate 30B is incided
The wavelength of light of each passage of light accepting part 32, according to the thickness of the cavity layer 21 on incoming position and the 1st and the 2nd mirror layer 22,
The material of 23 and thickness, uniquely determined.Thus, in light detection substrate 30B, different at each Air conduct measurement of light accepting part 32
The light of wavelength.
As described above, in spectroscopic sensor 1B, in the case of observing from Z-direction, interference filter portion
1st filtered region 24 of 20B is separated by optical by dividing plate 15, dividing plate 15 from cavity layer 21 arrive the 1st and the 2nd mirror layer 22,
The both sides of 23.Therefore, according to spectroscopic sensor 1B, carrying of light-filtering characteristic can be sought as above-mentioned spectroscopic sensor 1A
High.
It addition, in spectroscopic sensor 1B, dividing plate 15 arrives via the 1st mirror layer 22 and is arranged in light transmission substrate 11 and does
Relate to the 2nd coupling layer 9 between optical filtering portion 20B.Thus, the incidence of the light inciding interference filter portion 20B is limited by dividing plate 15
Angle, thus it is possible to the suppression of the crosstalk of the light more fully sought in interference filter portion 20B.If it addition, inciding interference
The angle of incidence of the light of optical filtering portion 20B is limited, then by the light of interference filter portion 20B close to collimated light, therefore, it is possible to make interference
Optical filtering portion 20B's is the sharpest through characteristic.
It addition, in spectroscopic sensor 1B, cavity layer the 21 and the 2nd coupling layer 9 is constructed from the same material.Thereby, it is possible to easily
Realize the lamination process of cavity layer the 21 and the 2nd coupling layer 9.It addition, in the case of such as dividing plate 15 being set by dry-etching,
The condition that can make etching gas etc. is identical, therefore, it is possible to realize the high dividing plate of form accuracy 15.It addition, refractive index is identical, institute
Also to be able to obtain stable light-filtering characteristic.Further, the collimation property of the dividing plate 15 of the angle of incidence for limiting light can be sought
Homogenization.
Additionally, in the spectroscopic sensor 1B of the 2nd embodiment, it is also possible to use the light of back surface incident type as shown in figure 15
Detection substrate 30C.Overleaf in the light detection substrate 30C of incident type, light accepting part 32 is formed on bag in semiconductor substrate 31
Containing the part of back side 31b, the surface with sensitive surface 32a opposition side in light accepting part 32 is blocked.As for light accepting part 32
The distribution 33 of the input and output signal of telecommunication, is formed with back side distribution 33e, and distribution 33e is provided with the projection that surface is installed overleaf
Electrode 36.So, if using the light detection substrate 30C of back surface incident type, then need not through electrode etc., thus it is possible to scheme
Seek the cost degradation of spectroscopic sensor 1B.
Finally, with reference to Figure 16, the effect of spectroscopic sensor 1A, 1B of the 1st and the 2nd embodiment is illustrated.Figure 16
Be represent to spectroscopic sensor irradiate 820nm, 860nm, 900nm, 940nm, 980nm bright line time light wavelength and from light splitting
The chart of the relation of the signal intensity of sensor output, (a) is spectroscopic sensor 1A, 1B of the embodiment of the 1st and the 2nd, (b)
For the spectroscopic sensor after eliminating dividing plate 15 from spectroscopic sensor 1A, 1B of the 1st and the 2nd embodiment (hereinafter, referred to as " nothing
The spectroscopic sensor of dividing plate ").As shown in (a) and (b) of Figure 16, at spectroscopic sensor 1A, 1B of the 1st and the 2nd embodiment
In, compared with the spectroscopic sensor of non-inductive windings, the wave-length coverage stenosis of the light being split is narrow.This is because, pressed down by dividing plate 15
Make the crosstalk of light in interference filter portion 20A, 20B, it is achieved that the optical filtering of narrow frequency range passes through characteristic.It addition, the 1st and
In spectroscopic sensor 1A, 1B of 2 embodiments, compared with the spectroscopic sensor of non-inductive windings, stray light component tails off.This be because of
For, in addition to inhibited the crosstalk of the light in interference filter portion 20A, 20B by dividing plate 15, further suppress the 2nd mirror layer 23 He
The multipath reflection of the light between the sensitive surface 32a of light detection substrate 30A, 30B and the generation of dry caused veiling glare.
Above, the 1st and the 2nd embodiment of the present invention is illustrated, but the present invention is not limited to above-mentioned the 1st
With the 2nd embodiment.Such as, material and the shape of each component parts of spectroscopic sensor is not limited to above-mentioned material and shape
Shape, it is possible to apply various material and shape.As one example, the material of cavity layer can also be by TiO2、Ta2O5、SiN、
Si、Ge、Al2O3, photopermeability resin constitute material etc..The material of the 1st and the 2nd mirror layer can also be by structures such as Al, Au, Ag
The thickness become is several nm～the metal film of number μm.The material of the 1st and the 2nd coupling layer can also be photopermeability resin etc..It addition,
The size of each component parts of spectroscopic sensor is also an example.It addition, in the present invention and present embodiment, so-called " Gu
Fixed ", refer to the situation not only including being completely fixed but also be also contained in situation approximately fixed in the range of foozle etc..Right
The most identical in " identical ", " parallel ", " vertically ", " equal ", " the same face " etc..
It addition, in the 1st filtered region in interference filter portion, the thickness of cavity layer can change two-dimensionally (not only in X-axis side
Change the most in the Y-axis direction), or can also change in a stage-like manner.It addition, light detection substrate is not limited to one-dimensional sensing
Device, it is also possible to for dimension sensor.It addition, utilize the optical separation in the dry optical filtering portion of dividing plate, observing from Z-direction
In the case of, it is also possible to for the optical separation of two dimension.Such as, dividing plate the most in the Y-axis direction but also prolongs in the X-axis direction
Stretching, dividing plate can also become clathrate as entirety.
It addition, from the direction observation of the regulation intersected of sensitive surface of light detection substrate in the case of, dividing plate can be by
Interference filter portion separates optically.But, in the case of observing from the direction vertical with sensitive surface, will interfere if used
The dividing plate that optical filtering portion separates optically, then can make the structure of spectroscopic sensor simplify.It addition, dividing plate is not limited to from cavity layer
Arrive the dividing plate of the both sides of the 1st and the 2nd mirror layer.That is, dividing plate can arrive at least one party of the 1st and the 2nd mirror layer from cavity layer.At this
In the case of, it is also possible to seek the suppression of the crosstalk of light in interference filter portion fully, and light precision can be made to enter well
It is mapped to the position of the regulation of the sensitive surface of the light detection substrate corresponding with the incoming position in interference filter portion, it is possible to seek the spy that filters
The raising of property.But, if dividing plate at least arrives the 2nd mirror layer from cavity layer, then the 2nd mirror layer and light can be suppressed to detect being subject to of substrate
The multipath reflection of the light between bright finish and the generation of dry caused veiling glare, it is possible to seek further carrying of light-filtering characteristic
High.
Additionally, dividing plate can on the direction vertical with sensitive surface separating cavity layer at least partially.It addition, arrive the
The dividing plate of 1 mirror layer, can on the direction vertical with sensitive surface separating the 1st mirror layer at least partially.Equally, the 2nd is arrived
The dividing plate of mirror layer, can on the direction vertical with sensitive surface separating the 2nd mirror layer at least partially.
It addition, replacement antireflection film, it is also possible to implement on the surface of the side, interference filter portion of light detection substrate to prevent into
The reflection of the reflection being mapped to the light of sensitive surface prevents from processing.Prevent the example processed as reflection, there is black silicon processing etc.
Roughened process or nano-pillar structure.In this case, it is also possible between the sensitive surface of suppression the 2nd mirror layer and light detection substrate
The multipath reflection of light and the generation of dry caused veiling glare, it is possible to realize the further raising of light-filtering characteristic.
It addition, interference filter portion can also have multiple 1st filtered region.In this case, the 2nd filtered region can be with
The mode surrounding this 1st filtered region for the 1st filtered region is formed, or, it is also possible to for multiple 1st filters
Light region surrounds the mode of the plurality of 1st filtered region and is formed.
It addition, for the joint in light detection substrate and interference filter portion, it is also possible to applications exploiting optical resin material
Joint in the joint carried out or the outer edge of spectroscopic sensor.Utilize in the joint that optical resin material is carried out, as optics
The material of resinous wood, it is possible to use epoxies, acrylic compounds, the organic material of silicone or be made up of organic-inorganic mixed
The optical resin of condensation material etc..It addition, in joint in the outer edge of spectroscopic sensor, it is possible to protected by spacer (spacer)
Hold gap and engaged by low melting point glass or solder etc..In this case, the region that joint surrounds can be empty
Air cleft gap, or, it is also possible at this area filling optical resin material.
Industrial applicability
In accordance with the invention it is possible to provide the spectroscopic sensor of a kind of raising that can seek light-filtering characteristic.
The explanation of symbol
1A, 1B ... spectroscopic sensor, 3 ... the 1st coupling layer, 9 ... the 2nd coupling layer, 11 ... light transmission substrate, 15 ... dividing plate,
15a, 15b ... end, 20A, 20B ... interference filter portion, 21 ... cavity layer, 22 ... the 1st mirror layer, 23 ... the 2nd mirror layer, 30A, 30B,
30C ... light detection substrate, 32a ... sensitive surface, 34 ... antireflection film.
Claims (146)
1. a spectroscopic sensor, it is characterised in that
Including:
Interference filter portion, it has and is provided with cavity layer and across relative the 1st and the 2nd mirror layer and the described 1st of described cavity layer
Between mirror layer and described 2nd mirror layer distance change the 1st region and from regulation direction observe in the case of with ring-type
Surround the 2nd region in described 1st region, described 1st region optionally makes according to incoming position the wave-length coverage of regulation
Light from described 1st mirror layer side through to described 2nd mirror layer side；
Light detection substrate, it has and has passed through the light in described 1st region and carry out the sensitive surface of incidence, to inciding described sensitive surface
Light detect；And
Dividing plate, it arrives the described 1st and at least one party of described 2nd mirror layer from described cavity layer, is seeing from the direction of described regulation
In the case of examining, described 1st area optical is separated,
The direction of described regulation is the direction intersected with described sensitive surface,
Described cavity layer, throughout described 1st region and described 2nd region, is continuously formed.
2. spectroscopic sensor as claimed in claim 1, it is characterised in that
Described dividing plate at least arrives described 2nd mirror layer from described cavity layer.
3. spectroscopic sensor as claimed in claim 2, it is characterised in that
Described dividing plate arrives the described 1st and the both sides of described 2nd mirror layer from described cavity layer.
4. the spectroscopic sensor as according to any one of claims 1 to 3, it is characterised in that
It is also equipped with:
1st coupling layer, it is arranged between described interference filter portion and described light detection substrate, makes from described interference filter portion row
Proceed to the light transmission of described light detection substrate,
Described dividing plate arrives described 1st coupling layer via described 2nd mirror layer.
5. the spectroscopic sensor as according to any one of claims 1 to 3, it is characterised in that
It is also equipped with:
Light transmission substrate, makes to incide the light transmission in described interference filter portion；And
2nd coupling layer, is arranged between described light transmission substrate and described interference filter portion, makes to advance from described light transmission substrate
To the light transmission in described interference filter portion,
Described dividing plate arrives described 2nd coupling layer via described 1st mirror layer.
6. spectroscopic sensor as claimed in claim 4, it is characterised in that
It is also equipped with:
Light transmission substrate, makes to incide the light transmission in described interference filter portion；And
2nd coupling layer, is arranged between described light transmission substrate and described interference filter portion, makes to advance from described light transmission substrate
To the light transmission in described interference filter portion,
Described dividing plate arrives described 2nd coupling layer via described 1st mirror layer.
7. spectroscopic sensor as claimed in claim 5, it is characterised in that
Described cavity layer and described 2nd coupling layer are constructed from the same material.
8. spectroscopic sensor as claimed in claim 6, it is characterised in that
Described cavity layer and described 2nd coupling layer are constructed from the same material.
9. the spectroscopic sensor as according to any one of claims 1 to 3, it is characterised in that
Distance change on the direction of the described regulation between described 1st mirror layer and described 2nd mirror layer,
Distance on the direction of the described regulation between end and the described sensitive surface of the described sensitive surface side of described dividing plate is fixed,
On the direction of described dividing plate and described sensitive surface opposition side the described regulation between end and described sensitive surface away from
From fixing.
10. spectroscopic sensor as claimed in claim 4, it is characterised in that
Distance change on the direction of the described regulation between described 1st mirror layer and described 2nd mirror layer,
Distance on the direction of the described regulation between end and the described sensitive surface of the described sensitive surface side of described dividing plate is fixed,
On the direction of described dividing plate and described sensitive surface opposition side the described regulation between end and described sensitive surface away from
From fixing.
11. spectroscopic sensors as claimed in claim 5, it is characterised in that
Distance change on the direction of the described regulation between described 1st mirror layer and described 2nd mirror layer,
Distance on the direction of the described regulation between end and the described sensitive surface of the described sensitive surface side of described dividing plate is fixed,
On the direction of described dividing plate and described sensitive surface opposition side the described regulation between end and described sensitive surface away from
From fixing.
12. spectroscopic sensors as claimed in claim 6, it is characterised in that
Distance change on the direction of the described regulation between described 1st mirror layer and described 2nd mirror layer,
Distance on the direction of the described regulation between end and the described sensitive surface of the described sensitive surface side of described dividing plate is fixed,
On the direction of described dividing plate and described sensitive surface opposition side the described regulation between end and described sensitive surface away from
From fixing.
13. spectroscopic sensors as claimed in claim 7, it is characterised in that
Distance change on the direction of the described regulation between described 1st mirror layer and described 2nd mirror layer,
Distance on the direction of the described regulation between end and the described sensitive surface of the described sensitive surface side of described dividing plate is fixed,
On the direction of described dividing plate and described sensitive surface opposition side the described regulation between end and described sensitive surface away from
From fixing.
14. spectroscopic sensors as claimed in claim 8, it is characterised in that
Distance change on the direction of the described regulation between described 1st mirror layer and described 2nd mirror layer,
Distance on the direction of the described regulation between end and the described sensitive surface of the described sensitive surface side of described dividing plate is fixed,
On the direction of described dividing plate and described sensitive surface opposition side the described regulation between end and described sensitive surface away from
From fixing.
15. spectroscopic sensors as according to any one of claims 1 to 3, it is characterised in that
In the case of observing from the direction of described regulation, described dividing plate extends in the way of passing across described sensitive surface.
16. spectroscopic sensors as claimed in claim 4, it is characterised in that
In the case of observing from the direction of described regulation, described dividing plate extends in the way of passing across described sensitive surface.
17. spectroscopic sensors as claimed in claim 5, it is characterised in that
In the case of observing from the direction of described regulation, described dividing plate extends in the way of passing across described sensitive surface.
18. spectroscopic sensors as claimed in claim 6, it is characterised in that
In the case of observing from the direction of described regulation, described dividing plate extends in the way of passing across described sensitive surface.
19. spectroscopic sensors as claimed in claim 7, it is characterised in that
In the case of observing from the direction of described regulation, described dividing plate extends in the way of passing across described sensitive surface.
20. spectroscopic sensors as claimed in claim 8, it is characterised in that
In the case of observing from the direction of described regulation, described dividing plate extends in the way of passing across described sensitive surface.
21. spectroscopic sensors as claimed in claim 9, it is characterised in that
In the case of observing from the direction of described regulation, described dividing plate extends in the way of passing across described sensitive surface.
22. spectroscopic sensors as claimed in claim 10, it is characterised in that
In the case of observing from the direction of described regulation, described dividing plate extends in the way of passing across described sensitive surface.
23. spectroscopic sensors as claimed in claim 11, it is characterised in that
In the case of observing from the direction of described regulation, described dividing plate extends in the way of passing across described sensitive surface.
24. spectroscopic sensors as claimed in claim 12, it is characterised in that
In the case of observing from the direction of described regulation, described dividing plate extends in the way of passing across described sensitive surface.
25. spectroscopic sensors as claimed in claim 13, it is characterised in that
In the case of observing from the direction of described regulation, described dividing plate extends in the way of passing across described sensitive surface.
26. spectroscopic sensors as claimed in claim 14, it is characterised in that
In the case of observing from the direction of described regulation, described dividing plate extends in the way of passing across described sensitive surface.
27. spectroscopic sensors as according to any one of claims 1 to 3, it is characterised in that
It is also equipped with:
Antireflection film, it is arranged between described interference filter portion and described light detection substrate, prevents from inciding described light
The reflection of the light in face.
28. spectroscopic sensors as claimed in claim 4, it is characterised in that
It is also equipped with:
Antireflection film, it is arranged between described interference filter portion and described light detection substrate, prevents from inciding described light
The reflection of the light in face.
29. spectroscopic sensors as claimed in claim 5, it is characterised in that
It is also equipped with:
Antireflection film, it is arranged between described interference filter portion and described light detection substrate, prevents from inciding described light
The reflection of the light in face.
30. spectroscopic sensors as claimed in claim 6, it is characterised in that
It is also equipped with:
Antireflection film, it is arranged between described interference filter portion and described light detection substrate, prevents from inciding described light
The reflection of the light in face.
31. spectroscopic sensors as claimed in claim 7, it is characterised in that
It is also equipped with:
Antireflection film, it is arranged between described interference filter portion and described light detection substrate, prevents from inciding described light
The reflection of the light in face.
32. spectroscopic sensors as claimed in claim 8, it is characterised in that
It is also equipped with:
Antireflection film, it is arranged between described interference filter portion and described light detection substrate, prevents from inciding described light
The reflection of the light in face.
33. spectroscopic sensors as claimed in claim 9, it is characterised in that
It is also equipped with:
Antireflection film, it is arranged between described interference filter portion and described light detection substrate, prevents from inciding described light
The reflection of the light in face.
34. spectroscopic sensors as claimed in claim 10, it is characterised in that
It is also equipped with:
Antireflection film, it is arranged between described interference filter portion and described light detection substrate, prevents from inciding described light
The reflection of the light in face.
35. spectroscopic sensors as claimed in claim 11, it is characterised in that
It is also equipped with:
Antireflection film, it is arranged between described interference filter portion and described light detection substrate, prevents from inciding described light
The reflection of the light in face.
36. spectroscopic sensors as claimed in claim 12, it is characterised in that
It is also equipped with:
Antireflection film, it is arranged between described interference filter portion and described light detection substrate, prevents from inciding described light
The reflection of the light in face.
37. spectroscopic sensors as claimed in claim 13, it is characterised in that
It is also equipped with:
Antireflection film, it is arranged between described interference filter portion and described light detection substrate, prevents from inciding described light
The reflection of the light in face.
38. spectroscopic sensors as claimed in claim 14, it is characterised in that
It is also equipped with:
Antireflection film, it is arranged between described interference filter portion and described light detection substrate, prevents from inciding described light
The reflection of the light in face.
39. spectroscopic sensors as claimed in claim 15, it is characterised in that
It is also equipped with:
Antireflection film, it is arranged between described interference filter portion and described light detection substrate, prevents from inciding described light
The reflection of the light in face.
40. spectroscopic sensors as claimed in claim 16, it is characterised in that
It is also equipped with:
Antireflection film, it is arranged between described interference filter portion and described light detection substrate, prevents from inciding described light
The reflection of the light in face.
41. spectroscopic sensors as claimed in claim 17, it is characterised in that
It is also equipped with:
Antireflection film, it is arranged between described interference filter portion and described light detection substrate, prevents from inciding described light
The reflection of the light in face.
42. spectroscopic sensors as claimed in claim 18, it is characterised in that
It is also equipped with:
Antireflection film, it is arranged between described interference filter portion and described light detection substrate, prevents from inciding described light
The reflection of the light in face.
43. spectroscopic sensors as claimed in claim 19, it is characterised in that
It is also equipped with:
Antireflection film, it is arranged between described interference filter portion and described light detection substrate, prevents from inciding described light
The reflection of the light in face.
44. spectroscopic sensors as claimed in claim 20, it is characterised in that
It is also equipped with:
Antireflection film, it is arranged between described interference filter portion and described light detection substrate, prevents from inciding described light
The reflection of the light in face.
45. spectroscopic sensors as claimed in claim 21, it is characterised in that
It is also equipped with:
Antireflection film, it is arranged between described interference filter portion and described light detection substrate, prevents from inciding described light
The reflection of the light in face.
46. spectroscopic sensors as claimed in claim 22, it is characterised in that
It is also equipped with:
Antireflection film, it is arranged between described interference filter portion and described light detection substrate, prevents from inciding described light
The reflection of the light in face.
47. spectroscopic sensors as claimed in claim 23, it is characterised in that
It is also equipped with:
Antireflection film, it is arranged between described interference filter portion and described light detection substrate, prevents from inciding described light
The reflection of the light in face.
48. spectroscopic sensors as claimed in claim 24, it is characterised in that
It is also equipped with:
Antireflection film, it is arranged between described interference filter portion and described light detection substrate, prevents from inciding described light
The reflection of the light in face.
49. spectroscopic sensors as claimed in claim 25, it is characterised in that
It is also equipped with:
Antireflection film, it is arranged between described interference filter portion and described light detection substrate, prevents from inciding described light
The reflection of the light in face.
50. spectroscopic sensors as claimed in claim 26, it is characterised in that
It is also equipped with:
Antireflection film, it is arranged between described interference filter portion and described light detection substrate, prevents from inciding described light
The reflection of the light in face.
51. spectroscopic sensors as according to any one of claims 1 to 3, it is characterised in that
The surface of the side, described interference filter portion of described light detection substrate implements to prevent from inciding the light of described sensitive surface
The reflection of reflection prevents from processing.
52. spectroscopic sensors as claimed in claim 4, it is characterised in that
The surface of the side, described interference filter portion of described light detection substrate implements to prevent from inciding the light of described sensitive surface
The reflection of reflection prevents from processing.
53. spectroscopic sensors as claimed in claim 5, it is characterised in that
The surface of the side, described interference filter portion of described light detection substrate implements to prevent from inciding the light of described sensitive surface
The reflection of reflection prevents from processing.
54. spectroscopic sensors as claimed in claim 6, it is characterised in that
The surface of the side, described interference filter portion of described light detection substrate implements to prevent from inciding the light of described sensitive surface
The reflection of reflection prevents from processing.
55. spectroscopic sensors as claimed in claim 7, it is characterised in that
The surface of the side, described interference filter portion of described light detection substrate implements to prevent from inciding the light of described sensitive surface
The reflection of reflection prevents from processing.
56. spectroscopic sensors as claimed in claim 8, it is characterised in that
The surface of the side, described interference filter portion of described light detection substrate implements to prevent from inciding the light of described sensitive surface
The reflection of reflection prevents from processing.
57. spectroscopic sensors as claimed in claim 9, it is characterised in that
The surface of the side, described interference filter portion of described light detection substrate implements to prevent from inciding the light of described sensitive surface
The reflection of reflection prevents from processing.
58. spectroscopic sensors as claimed in claim 10, it is characterised in that
The surface of the side, described interference filter portion of described light detection substrate implements to prevent from inciding the light of described sensitive surface
The reflection of reflection prevents from processing.
59. spectroscopic sensors as claimed in claim 11, it is characterised in that
The surface of the side, described interference filter portion of described light detection substrate implements to prevent from inciding the light of described sensitive surface
The reflection of reflection prevents from processing.
60. spectroscopic sensors as claimed in claim 12, it is characterised in that
The surface of the side, described interference filter portion of described light detection substrate implements to prevent from inciding the light of described sensitive surface
The reflection of reflection prevents from processing.
61. spectroscopic sensors as claimed in claim 13, it is characterised in that
The surface of the side, described interference filter portion of described light detection substrate implements to prevent from inciding the light of described sensitive surface
The reflection of reflection prevents from processing.
62. spectroscopic sensors as claimed in claim 14, it is characterised in that
The surface of the side, described interference filter portion of described light detection substrate implements to prevent from inciding the light of described sensitive surface
The reflection of reflection prevents from processing.
63. spectroscopic sensors as claimed in claim 15, it is characterised in that
The surface of the side, described interference filter portion of described light detection substrate implements to prevent from inciding the light of described sensitive surface
The reflection of reflection prevents from processing.
64. spectroscopic sensors as claimed in claim 16, it is characterised in that
The surface of the side, described interference filter portion of described light detection substrate implements to prevent from inciding the light of described sensitive surface
The reflection of reflection prevents from processing.
65. spectroscopic sensors as claimed in claim 17, it is characterised in that
The surface of the side, described interference filter portion of described light detection substrate implements to prevent from inciding the light of described sensitive surface
The reflection of reflection prevents from processing.
66. spectroscopic sensors as claimed in claim 18, it is characterised in that
The surface of the side, described interference filter portion of described light detection substrate implements to prevent from inciding the light of described sensitive surface
The reflection of reflection prevents from processing.
67. spectroscopic sensors as claimed in claim 19, it is characterised in that
The surface of the side, described interference filter portion of described light detection substrate implements to prevent from inciding the light of described sensitive surface
The reflection of reflection prevents from processing.
68. spectroscopic sensors as claimed in claim 20, it is characterised in that
The surface of the side, described interference filter portion of described light detection substrate implements to prevent from inciding the light of described sensitive surface
The reflection of reflection prevents from processing.
69. spectroscopic sensors as claimed in claim 21, it is characterised in that
The surface of the side, described interference filter portion of described light detection substrate implements to prevent from inciding the light of described sensitive surface
The reflection of reflection prevents from processing.
70. spectroscopic sensors as claimed in claim 22, it is characterised in that
The surface of the side, described interference filter portion of described light detection substrate implements to prevent from inciding the light of described sensitive surface
The reflection of reflection prevents from processing.
71. spectroscopic sensors as claimed in claim 23, it is characterised in that
The surface of the side, described interference filter portion of described light detection substrate implements to prevent from inciding the light of described sensitive surface
The reflection of reflection prevents from processing.
72. spectroscopic sensors as claimed in claim 24, it is characterised in that
The surface of the side, described interference filter portion of described light detection substrate implements to prevent from inciding the light of described sensitive surface
The reflection of reflection prevents from processing.
73. spectroscopic sensors as claimed in claim 25, it is characterised in that
The surface of the side, described interference filter portion of described light detection substrate implements to prevent from inciding the light of described sensitive surface
The reflection of reflection prevents from processing.
74. spectroscopic sensors as claimed in claim 26, it is characterised in that
The surface of the side, described interference filter portion of described light detection substrate implements to prevent from inciding the light of described sensitive surface
The reflection of reflection prevents from processing.
75. spectroscopic sensors as according to any one of claims 1 to 3, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
76. spectroscopic sensors as claimed in claim 4, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
77. spectroscopic sensors as claimed in claim 5, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
78. spectroscopic sensors as claimed in claim 6, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
79. spectroscopic sensors as claimed in claim 7, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
80. spectroscopic sensors as claimed in claim 8, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
81. spectroscopic sensors as claimed in claim 9, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
82. spectroscopic sensors as claimed in claim 10, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
83. spectroscopic sensors as claimed in claim 11, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
84. spectroscopic sensors as claimed in claim 12, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
85. spectroscopic sensors as claimed in claim 13, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
86. spectroscopic sensors as claimed in claim 14, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
87. spectroscopic sensors as claimed in claim 15, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
88. spectroscopic sensors as claimed in claim 16, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
89. spectroscopic sensors as claimed in claim 17, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
90. spectroscopic sensors as claimed in claim 18, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
91. spectroscopic sensors as claimed in claim 19, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
92. spectroscopic sensors as claimed in claim 20, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
93. spectroscopic sensors as claimed in claim 21, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
94. spectroscopic sensors as claimed in claim 22, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
95. spectroscopic sensors as claimed in claim 23, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
96. spectroscopic sensors as claimed in claim 24, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
97. spectroscopic sensors as claimed in claim 25, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
98. spectroscopic sensors as claimed in claim 26, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
99. spectroscopic sensors as claimed in claim 27, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
100. spectroscopic sensors as claimed in claim 28, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
101. spectroscopic sensors as claimed in claim 29, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
102. spectroscopic sensors as claimed in claim 30, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
103. spectroscopic sensors as claimed in claim 31, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
104. spectroscopic sensors as claimed in claim 32, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
105. spectroscopic sensors as claimed in claim 33, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
106. spectroscopic sensors as claimed in claim 34, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
107. spectroscopic sensors as claimed in claim 35, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
108. spectroscopic sensors as claimed in claim 36, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
109. spectroscopic sensors as claimed in claim 37, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
110. spectroscopic sensors as claimed in claim 38, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
111. spectroscopic sensors as claimed in claim 39, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
112. spectroscopic sensors as claimed in claim 40, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
113. spectroscopic sensors as claimed in claim 41, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
114. spectroscopic sensors as claimed in claim 42, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
115. spectroscopic sensors as claimed in claim 43, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
116. spectroscopic sensors as claimed in claim 44, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
117. spectroscopic sensors as claimed in claim 45, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
118. spectroscopic sensors as claimed in claim 46, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
119. spectroscopic sensors as claimed in claim 47, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
120. spectroscopic sensors as claimed in claim 48, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
121. spectroscopic sensors as claimed in claim 49, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
122. spectroscopic sensors as claimed in claim 50, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
123. spectroscopic sensors as claimed in claim 51, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
124. spectroscopic sensors as claimed in claim 52, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
125. spectroscopic sensors as claimed in claim 53, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
126. spectroscopic sensors as claimed in claim 54, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
127. spectroscopic sensors as claimed in claim 55, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
128. spectroscopic sensors as claimed in claim 56, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
129. spectroscopic sensors as claimed in claim 57, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
130. spectroscopic sensors as claimed in claim 58, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
131. spectroscopic sensors as claimed in claim 59, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
132. spectroscopic sensors as claimed in claim 60, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
133. spectroscopic sensors as claimed in claim 61, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
134. spectroscopic sensors as claimed in claim 62, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
135. spectroscopic sensors as described in claim 63, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
136. spectroscopic sensors as described in claim 64, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
137. spectroscopic sensors as described in claim 65, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
138. spectroscopic sensors as described in claim 66, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
139. spectroscopic sensors as described in claim 67, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
140. spectroscopic sensors as recited in claim 68, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
141. spectroscopic sensors as described in claim 69, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
142. spectroscopic sensors as described in claim 70, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
143. spectroscopic sensors as described in claim 71, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
144. spectroscopic sensors as described in claim 72, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
145. spectroscopic sensors as described in claim 73, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
146. spectroscopic sensors as described in claim 74, it is characterised in that
The direction of described regulation is the direction vertical with described sensitive surface.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012114341A JP5988690B2 (en) | 2012-05-18 | 2012-05-18 | Spectroscopic sensor |
| JP2012-114341 | 2012-05-18 | ||
| PCT/JP2013/062915 WO2013172230A1 (en) | 2012-05-18 | 2013-05-08 | Spectral sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104303032A CN104303032A (en) | 2015-01-21 |
| CN104303032B true CN104303032B (en) | 2016-11-30 |
Family
ID=
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5784507A (en) * | 1991-04-05 | 1998-07-21 | Holm-Kennedy; James W. | Integrated optical wavelength discrimination devices and methods for fabricating same |
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5784507A (en) * | 1991-04-05 | 1998-07-21 | Holm-Kennedy; James W. | Integrated optical wavelength discrimination devices and methods for fabricating same |
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