CN104345576A - Method for forming patterns - Google Patents
Method for forming patterns Download PDFInfo
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- CN104345576A CN104345576A CN201310347129.5A CN201310347129A CN104345576A CN 104345576 A CN104345576 A CN 104345576A CN 201310347129 A CN201310347129 A CN 201310347129A CN 104345576 A CN104345576 A CN 104345576A
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Abstract
The invention discloses a method for forming patterns. The method for forming the patterns comprises the following steps: firstly providing N different optical mask patterns; then transferring the N different optical mask patterns to a hard mask layer by at least N-1 light sources with different wavelengths to form hard mask patterns, wherein one of the at least N-1 light sources with different wavelengths is a light source with a wavelength of 193nm; and N is an integer being greater than or equal to 3.
Description
Technical field
The present invention relates to a kind of semiconductor fabrication process, and particularly relate to a kind of method forming pattern.
Background technology
Along with the increase of semiconductor subassembly bulk density, the requirement manufacturing assembly critical size (CD) is also more and more harsh.For undersized assembly can be produced, utilize advanced photoetching technique to carry out patterning and to be inevitable trend.But, if all lithographic fabrication process are all performed by the photoetching technique of advanced person, the cost purchasing new board of great number not only must be expended.
Summary of the invention
The object of the present invention is to provide a kind of method forming pattern, by the old board recycling of comparatively low order, required pattern can be formed in conjunction with advanced photolithography techniques.
Another object of the present invention is to provide a kind of method forming pattern, can reduce the cost of manufacture.
For reaching above-mentioned purpose, the present invention proposes a kind of method forming pattern.First, the optical mask pattern that N kind is different is provided.Then, with the light source of at least N-1 kind different wave length, optical mask patterns different for described N kind is transferred on hard mask layer, form hard mask pattern, one of light source of wherein said at least N-1 kind different wave length for wavelength be the light source of 193nm, and N be more than or equal to 3 integer.
According to one embodiment of the invention, the light source of above-mentioned at least N-1 kind different wave length another for wavelength be 436nm(G line) light source, wavelength be 365nm(I line) light source, wavelength be the light source that the light source of 248nm or wavelength are shorter than 193nm, N be more than or equal to 3 integer.
According to one embodiment of the invention, above-mentioned hard mask pattern has the pattern of the different live width of at least N-1 kind.
According to one embodiment of the invention, above-mentioned hard mask pattern comprises the first hard mask pattern and the second hard mask pattern, and the size of wherein said first hard mask pattern is less than the size of described second hard mask pattern.
According to one embodiment of the invention, the method of above-mentioned formation pattern is also included on described hard mask layer and forms a sacrifice layer, the formation method of wherein said first hard mask pattern comprises: the mask layer forming the first patterning with the first photomask and the first light source on described sacrifice layer, the light source of wherein said first light source to be wavelength be 193nm; Carry out the first etching process, by the design transfer of the mask layer of the first patterning to described sacrifice layer, to form at least one axle center pattern; A clearance wall loop is formed around the pattern of described axle center; Remove described axle center pattern; Form the mask layer of the second patterning with the second photomask and secondary light source, the mask layer of described second patterning has opening, exposes the described clearance wall loop of part at end of pattern place, described axle center; With the mask layer of described second patterning for mask, carry out the second etching process, cut off described clearance wall loop, to form most clearance walls; And, with described clearance wall for mask, the 3rd etching process is carried out to described hard mask layer, to form described first hard mask pattern.
According to one embodiment of the invention, the formation method of above-mentioned second hard mask pattern comprises: the mask layer forming the 3rd patterning with the 3rd photomask and the 3rd light source on described hard mask layer; And, with the mask layer of described 3rd patterning for mask, described 3rd etching process is carried out to described hard mask layer, to form described second hard mask pattern.
According to one embodiment of the invention, the step forming the mask layer of described 3rd patterning is carried out after described second etching process.
According to one embodiment of the invention, the step forming the mask layer of described 3rd patterning was carried out before the mask layer forming described second patterning.
According to one embodiment of the invention, above-mentioned second hard mask pattern is adjacent with the first hard mask pattern and contact.
According to one embodiment of the invention, above-mentioned hard mask pattern also comprises the 3rd hard mask pattern, and described 3rd hard mask pattern and described first hard mask pattern are separated by a distance.
According to one embodiment of the invention, above-mentioned second hard mask pattern and described first hard mask pattern are separated by a distance.
According to one embodiment of the invention, the method for above-mentioned formation pattern also comprises with described hard mask pattern for mask, by the material layer pattern below described hard mask pattern.
The present invention separately proposes a kind of method forming pattern.First, the target pattern of material layer is split into most local pattern.Then, the axle center pattern between the first minimum local pattern of critical size in described local pattern is formed with the first light source, and at least one second local pattern formed with at least one secondary light source in described local pattern, the wavelength of the first wherein said light source is less than the wavelength of described secondary light source, described first light source and described secondary light source one of them for wavelength be the light source of 193nm.
According to one embodiment of the invention, described first light source and described secondary light source wherein another for wavelength be 436nm(G line) light source, wavelength be 365nm(I line) light source, wavelength be the light source that the light source of 248nm or wavelength are shorter than 193nm.
The present invention proposes again a kind of method forming pattern.First, the target pattern of material layer is split into most local pattern.Then, form the axle center pattern between the first minimum local pattern of critical size in described local pattern with wet type 193nm light source, and form at least one second local pattern in described local pattern with at least one dry type light source.
According to one embodiment of the invention, described dry type light source is dry type 193nm light source, dry type 435nm light source, dry type 365nm light source or dry type 248nm light source.
Based on above-mentioned, the method for the formation pattern of the embodiment of the present invention, can recycle old board, form required pattern in conjunction with advanced photolithography techniques, reduces the cost manufactured.
For above-mentioned feature and advantage of the present invention can be become apparent, special embodiment below, and coordinate appended accompanying drawing to be described in detail below.
Accompanying drawing explanation
Figure 1A to Fig. 1 H illustrates a kind of vertical view forming the method for pattern according to first embodiment of the invention;
Fig. 2 A to Fig. 2 H is the diagrammatic cross-section illustrating Figure 1A to Fig. 1 H tangent line I-I;
Fig. 3 A to Fig. 3 H illustrates a kind of vertical view forming the method for pattern according to second embodiment of the invention;
Fig. 4 A to Fig. 4 H is the diagrammatic cross-section illustrating Fig. 3 A to Fig. 3 H tangent line II-II;
Fig. 5 to Fig. 7 is respectively the schematic diagram of the first photomask, the second photomask and the 3rd photomask;
Fig. 8 is the local process flow diagram of the method for the formation pattern of first embodiment of the invention;
Fig. 9 is the local process flow diagram of the method for the formation pattern of second embodiment of the invention; And
Figure 10 is the local pattern composition schematic diagram of the material layer of the patterning of the embodiment of the present invention.
Embodiment
The present invention utilizes the light source of different wavelength to carry out the exposure manufacture craft of several optical mask pattern, to be transferred on chip by above-mentioned optical mask pattern.
Figure 10 is the local pattern composition schematic diagram of the material layer of the patterning of the embodiment of the present invention.
Please refer to Figure 10, the target pattern of the material layer 101d of the patterning for being formed is split into multiple local pattern by the present invention, comprises pattern 101a, 101b, 101c.Wherein pattern 101a, 101b is blocky; Pattern 101c is the strip pattern (i.e. L-type pattern) with a corner.Pattern 101a and pattern 101c is separated by a distance; Pattern 101b is then adjacent with pattern 101c and contact.Size according to the critical size of pattern 101a, 101b, the 101c on chip come choice for use there is the light source of required wavelength and the photomask of design to form each local pattern (pattern 101a, 101b, 101c), the target pattern of final institute for the material layer 101d of the patterning of formation can be formed.
In more detail, state-of-the-art exposure bench can be used to form axle center pattern 110a for the local pattern (pattern 101c) with minimum critical size and the manufacture craft in the manufacture craft of tolerance clearance wall and Cutting clearance wall loop is formed; The exposure bench that the local pattern (pattern 101a, 101b) with larger critical size then can recycle comparatively low order is formed.
The method of formation pattern of the present invention is below described for two example two.
Figure 1A to Fig. 1 H illustrates a kind of vertical view forming the method for pattern according to first embodiment of the invention.Fig. 2 A to Fig. 2 H is the diagrammatic cross-section illustrating Figure 1A to Fig. 1 H tangent line I-I.Fig. 5 to Fig. 7 is respectively the schematic diagram of the first photomask, the second photomask and the 3rd photomask.Fig. 8 is the local process flow diagram of the method for the formation pattern of first embodiment of the invention.
Please refer to Figure 1A and Fig. 2 A, sequentially form material layer 101, hard mask layer 108 and sacrifice layer 110 on the substrate 100.Substrate 100 can be Semiconductor substrate, such as, be siliceous substrate.Material layer 101 can be dielectric layer, conductor layer or other rete to be patterned.In another embodiment, substrate 100 can not have material layer 101 yet, substrate 100 is layer to be patterned, but directly forms hard mask layer 108 and sacrifice layer 110.Hard mask layer 108 can be single or multiple lift structure.In the present embodiment, hard mask layer 108 from bottom to top comprises the first oxide layer 102, nitration case 104 and the second oxide layer 106.First oxide layer 102 comprises monox.Nitration case 104 comprises silicon nitride.Second oxide layer 106 comprises monox.Sacrifice layer 110 can be amorphous silicon layer, polysilicon layer or have the material layer of different etching selectivity from the hard mask layer 108 of below.The formation method of the first oxide layer 102, nitration case 104, second oxide layer 106 and sacrifice layer 110 is such as chemical vapour deposition technique (CVD) or other suitable sedimentation.
Afterwards, sacrifice layer 110 forms mask layer 107.In one embodiment, before formation mask layer 107, antireflection (ARC) layer 103 and end antireflection (BARC) layer 105 can first be formed.The material of antireflection (ARC) layer 103 can be individual layer, bilayer or multilayer.The material of end antireflection (BARC) layer 105 is such as can be individual layer, bilayer or multilayer.Mask layer 107 is such as photoresist oxidant layer.
Afterwards, please refer to Figure 1B and Fig. 2 B and Fig. 5 and Fig. 8, carry out step 810, with first photomask 10 and first light source with pattern 12 shown in Fig. 5, to mask layer 107(Figure 1A and Fig. 2 A) carry out exposure manufacture craft, thereafter, develop, to form the mask layer 107a of patterning.When the pattern 12 of first photomask 10 of Fig. 5 is formed by light screening material, when being light transmissive material around it, mask layer 107 is positive photoresist.On the contrary, when the pattern 12 of the first photomask 10 is formed by light transmissive material, when being light screening material around it, mask layer 107 is negative photoresist.In one embodiment, the manufacture craft of the mask layer 107a of aforementioned formation patterning can use immersion lithography (Immersion Lithography) to perform.More particularly, in immersion lithography, the light source of the first light source to be wavelength be 193nm.The light source of 193nm is such as the light source that ArF excimer laser produces.193nm light source can be divided into dry type (dry model) and wet type (wet model) two kinds.Usually, wet type 193nm light source (being also called 193nm submergence (193nm immersion)) is used to define minimal critical dimensions.Mask layer 107 can be positive photoresist or the negative photoresist of the light source being suitable for 193nm.Exposure manufacture craft uses immersion to scan stepper to perform.In another embodiment, the manufacture craft of the mask layer 107a of aforementioned formation patterning can use more advanced photoetching technique to perform.In more advanced photoetching technique, the first light source is the light source that wavelength is shorter than 193nm, such as, be with the light source of extreme ultraviolet laser, X-ray or electron beam.Mask layer 107 is positive photoresist or the negative photoresist that can be suitable for said light source.
Thereafter, please refer to Fig. 1 C and Fig. 2 C, with mask layer 107a(Figure 1B of patterning and Fig. 2 B) for mask, carry out etching process, with sacrificial patterned 110, form multiple axle center pattern (Mandrel Pattern) or be called core pattern 110a.Etching process can be anisotropic etching manufacture craft, such as, be dry-etching manufacture craft.Afterwards, antireflection (ARC) layer 103 of the mask layer 107a of patterning and below thereof and end antireflection (BARC) layer 105 are removed, exposes axle center pattern 110a.
Afterwards, clearance wall loop 112 is formed at the sidewall of each axle center pattern 110a.The material in clearance wall loop 112 comprises silicon nitride.The method forming clearance wall loop 112 comprises formation spacer material layer on the substrate 100, to cover axle center pattern 110a, then carries out anisotropic dry-etching manufacture craft, to remove the spacer material layer of part.In one embodiment, from top view, each clearance wall loop 112 is looped around around the pattern 110a of axle center.
Thereafter, please refer to Fig. 1 D and Fig. 2 D, by axle center pattern 110a(Fig. 1 C and Fig. 2 C) remove, expose clearance wall loop 112.Afterwards, the mask layer 114 of patterning is formed on the substrate 100.The formation method of the mask layer 114 of patterning is such as form mask layer on the substrate 100.The material of mask layer can be photoresist.Then, carry out the step 820 of Fig. 8, with second photomask 20 and the secondary light source with pattern 22 shown in Fig. 6, exposure manufacture craft is carried out to mask layer, thereafter, develops, to form the mask layer 114 of the patterning of Fig. 1 D and Fig. 2 D.In the present embodiment, the mask layer 114 of patterning has opening 116, exposes the portion gap wall loop 112 of pattern 110a end, axle center.When the pattern 22 of the second photomask 20 is patterns of openings and is formed by light transmissive material, and when being light screening material around it, mask layer is positive photoresist.On the contrary, when the pattern 22 of the second photomask 20 is light screening material, when being light transmissive material around it, mask layer is negative photoresist.The wavelength of secondary light source can be selected according to the critical size of opening 116.Secondary light source can be dry type light source or wet type light source.The wavelength of secondary light source can be identical with the wavelength of the first light source, or the wavelength of the first light source is longer than or is shorter than to wavelength.Secondary light source can be wavelength to be the light source of 193nm or to be longer than the light source of 193nm or to be shorter than the light source of 193nm.Secondary light source is such as wavelength is dry type 436nm(G line) light source, dry type wavelength be 365nm(I line) light source, the dry type wavelength light source (being such as KrF excimer laser) that is 248nm, the wavelength light source (being such as ArF excimer laser) that is 193nm, extreme ultraviolet laser, X-ray or electron beam.
In the present embodiment, the mask layer 107a of patterning uses the light source of 193nm to be formed; The critical size of the opening 116 of the mask layer 114 of patterning is greater than the critical size of the mask layer 107a of patterning, then the light source that wavelength can be used to be longer than 193nm is formed.
Afterwards, please refer to Fig. 1 E and Fig. 2 E, with the mask layer 114 of patterning for mask, carry out etching process to remove the exposed clearance wall loop 112 of opening 116, Cutting clearance wall loop 112, to form clearance wall 112a.Etching process can be anisotropic etching manufacture craft, such as, be dry-etching manufacture craft.Afterwards, the mask layer 114 of patterning is removed, exposes clearance wall 112a.
Then, please refer to Fig. 1 F and Fig. 2 F, form mask layer 118a and the 118b of patterning on the substrate 100.The mask layer 118a of patterning and clearance wall 112a is separated by a segment distance; The mask layer 118b of patterning then contacts with clearance wall 112a and is formed and combines mask 119.The formation method of mask layer 118a and the 118b of patterning is such as form mask layer on the substrate 100.The material of mask layer can be photoresist.Thereafter, carry out the step 830 of Fig. 8, please refer to Fig. 7 with the 3rd photomask 30(with pattern 32) and the 3rd light source, exposure manufacture craft is carried out to mask layer, thereafter, develops, to form mask layer 118a and the 118b of the patterning of Fig. 1 F and Fig. 2 F.When the pattern 32 of the 3rd photomask 30 is formed by light screening material, when being light transmissive material around it, mask layer is positive photoresist.On the contrary, when the pattern 32 of the 3rd photomask 30 is formed by light transmissive material, when being light screening material around it, mask layer is negative photoresist.3rd light source can be different with the first light source.The wavelength of the 3rd light source can be longer than the light source of 193nm or be shorter than the light source of 193nm.The light source being longer than 193nm is such as wavelength is 436nm(G line) light source, wavelength be 365nm(I line) light source or wavelength be the light source (being such as KrF excimer laser) of 248nm.The light source that wavelength is shorter than 193nm is such as extreme ultraviolet laser, X-ray or electron beam.In this example, the critical size of mask layer 118a, 118b of patterning is than aforementioned axle center pattern 110a(Fig. 1 C) critical size large, the light source being longer than 193nm can be used.
Afterwards, please refer to Fig. 1 G and Fig. 2 G, by hard mask layer 108 patterning, to form multiple hard mask pattern 108a, 108b and 108c on the substrate 100.In the present embodiment, each hard mask pattern 108a, 108b and 108c comprise the first oxidation pattern 102a, nitrogenize pattern 104a and the second oxidation pattern 106a from bottom to top.Method hard mask layer 108 being formed pattern can the mask layer 118a of patterning, the mask layer 118b of patterning and clearance wall 112a be mask, carries out dry-etching manufacture craft, to form hard mask pattern 108a below the mask layer 118a of patterning; Hard mask pattern 108b is formed below the mask layer 118b of patterning; Hard mask pattern 108c is formed below clearance wall 112a.Mask layer 118a, 118b of patterning and clearance wall 112a can be removed in the process of carrying out dry-etching manufacture craft or via another etching process to remove it.
State on the invention in embodiment, the live width of the hard mask pattern 108c formed below clearance wall 112a is less than the live width of the hard mask pattern 108b formed below the mask layer 118b of patterning; The live width of the hard mask pattern 108b formed below the mask layer 118b of patterning is less than the hard mask pattern 108a formed below the mask layer 118a of patterning, but, the present invention, not as limit, when practical application, can design according to required size and pattern.
Thereafter, please refer to Fig. 1 H and Fig. 2 H, with hard mask pattern 108a, 108b, 108c for mask, by material layer 101 patterning, to form pattern 101a, 101b, 101c of the material layer 101d of patterning respectively.Method material layer 101 being formed pattern 101a, 101b, 101c comprises carries out dry-etching manufacture craft.Afterwards, hard mask pattern 108a, 108b, 108c are removed, expose pattern 101a, 101b, 101c of the material layer 101d of patterning.In the present embodiment, the live width of pattern 101a is greater than the live width of pattern 101b; The live width of pattern 101b is greater than the live width of pattern 101c, but embodiments of the invention are not as limit.
In above example, be used for mask layer 118a, 118b(Fig. 1 F of the patterning forming wider hard mask pattern 108a, the 108b of live width and Fig. 2 F) step 830, just carry out after being the step 820 of photoetching in Cutting clearance wall loop 112 and etching process (Fig. 1 D, Fig. 2 D, Fig. 1 E and Fig. 2 E).But the present invention is not as limit.In another embodiment, also can be used for, as mask layer 118a, 118b of the patterning of wider hard mask pattern 108a, 108b mask of live width, carrying out photoetching and the etching process in Cutting clearance wall loop 112 afterwards again being formed first formation after clearance wall loop 112.
Fig. 3 A to Fig. 3 H illustrates a kind of vertical view forming the method for pattern according to second embodiment of the invention.Fig. 4 A to Fig. 4 H is the diagrammatic cross-section illustrating Fig. 3 A to Fig. 3 H tangent line II-II.Fig. 9 is the local process flow diagram of the method for the formation pattern of second embodiment of the invention.
Please refer to Fig. 3 A-Fig. 3 C and Fig. 4 A-Fig. 4 C, form intermediate structure according to the method disclosed in above-mentioned Figure 1A-Fig. 1 C and Fig. 2 A-Fig. 2 C, intermediate structure has most shafts heart pattern 110a.Most shafts heart pattern 110a is through first photomask 10 with pattern 12 as shown in Figure 5 and above-mentioned first light source (Fig. 9, step 910), carries out exposure manufacture craft to mask layer 107, forms the mask layer 107a of patterning.Afterwards, with the mask layer 107a of patterning for mask, via etching process by sacrifice layer 110 patterning to form it.Afterwards, around the pattern 110a of each axle center, clearance wall loop 112 is formed.
Thereafter, please refer to Fig. 3 D, Fig. 4 D, by axle center pattern 110a(Fig. 3 C and Fig. 4 C) remove.Then, mask layer 118a and the 118b of patterning is formed on the substrate 100.The formation method of mask layer 118a and the 118b of patterning is such as form mask layer on the substrate 100.The material of mask layer can be photoresist.Thereafter, carry out the step 920 of Fig. 9, to have above-mentioned 3rd photomask 30 of pattern 32 and above-mentioned 3rd light source shown in Fig. 7, exposure manufacture craft is carried out to mask layer, thereafter, develop, to form mask layer 118a and the 118b of the patterning shown in Fig. 3 D and Fig. 4 D.
Afterwards, please refer to Fig. 3 E and Fig. 4 E, form the mask layer 114 of patterning on the substrate 100.The formation method of the mask layer 114 of patterning is such as form mask layer on the substrate 100.The material of mask layer can be photoresist.Then, carry out the step 930 of Fig. 9, with above-mentioned second photomask 20(Fig. 6 with pattern 22) and above-mentioned secondary light source, exposure manufacture craft is carried out to mask layer, thereafter, develops, to form the mask layer 114 of the patterning shown in Fig. 3 E and Fig. 4 E.The mask layer 114 of patterning has opening 116, exposes the portion gap wall loop 112 of pattern 110a end, axle center.
Afterwards, please refer to Fig. 3 F and Fig. 4 F, with the mask layer 114 of patterning for mask, carry out etching process to remove the exposed clearance wall loop 112 of opening 116, Cutting clearance wall loop 112, to form clearance wall 112a.Afterwards, the mask layer 114 of patterning is removed, expose mask layer 118a and the 118b of clearance wall 112a and patterning.The mask layer 118a of patterning and clearance wall 112a is separated by a segment distance; The mask layer 118b of patterning then contacts with clearance wall 112a and is formed and combines mask 119.
Afterwards, please refer to Fig. 3 G to Fig. 3 H and Fig. 4 G to Fig. 4 H, by hard mask layer 108 patterning, to form multiple hard mask pattern 108a, 108b and 108c on the substrate 100.Thereafter, with hard mask pattern 108a, 108b, 108c for mask, by material layer 101 patterning, to form pattern 101a, 101b, 101c of the material layer 101d of patterning respectively.
In above embodiment, please refer to Figure 1A to Fig. 1 H, Fig. 2 A to Fig. 2 H, Fig. 3 A to Fig. 3 H and Fig. 4 A to Fig. 4 H, the live width of pattern 101a is greater than the live width of pattern 101b; The live width of pattern 101b is greater than pattern 101c.
The minimum pattern 101c of live width is the mask layer 107a first forming patterning with the first photomask and the first light source, then with the mask layer 107a of patterning for mask carries out etching process to form axle center pattern 110a.Afterwards, clearance wall loop 112 is formed around the pattern 110a of axle center, then axle center pattern 110a is removed, the mask layer 114 of patterning is formed again with the second photomask and secondary light source, then with the mask layer 114 of patterning for mask carries out etching process, with Cutting clearance wall loop 112, and form clearance wall 112a.Afterwards, then by the design transfer of clearance wall 112a to the hard mask layer 108 of below, form hard mask pattern 108c, then via etching process, material layer 101 patterning is formed.
The pattern 101a that live width is maximum and live width pattern 101b is between then that mask layer 118a, 118b of the patterning formed with the 3rd photomask and the 3rd light source are for mask, via etching process, hard mask pattern 108 patterning is formed hard mask pattern 108a, 108b, via etching process, material layer 101 patterning is formed again afterwards.
In one embodiment, mask layer 118a, 118b of patterning can be just carry out after the manufacture craft in Cutting clearance wall loop 112.But the present invention is not as limit.In another embodiment, after forming clearance wall loop 112, also first can form mask layer 118a, 118b of patterning, carry out the manufacture craft in Cutting clearance wall loop 112 afterwards again.
Please refer to Fig. 2 F and Fig. 4 F, in above embodiment, be that the live width of the combination mask 119 that the mask layer 118b being greater than clearance wall 112a and patterning with the live width of the mask layer 118a of patterning is formed illustrates, but the embodiment of the present invention is not as limit.In another embodiment, the live width of the mask layer 118a of patterning also can be the live width of the combination mask 119 that the mask layer 118b being less than clearance wall 112a and patterning is formed, but the live width of the mask layer 118a of patterning still can be greater than the live width of clearance wall 112a.In other embodiments, the live width of the mask layer 118a of patterning also can be the live width being less than clearance wall 112a.
In above embodiment, utilize the light source of at least two kinds of different wavelength, three kinds of different optical mask patterns are transferred on the material layer of substrate, form the pattern that at least two kinds of live widths are different, one of them of the light source of at least two kinds of wherein used different wave lengths is that the light source of 193nm illustrates with wavelength.But, the present invention is not as limit, in other example, also the optical mask pattern that N kind is different can be provided, and utilize the light source of at least wavelength that N-1 kind is different, optical mask patterns different for N kind is transferred on the material layer of substrate, forms the pattern that at least N-1 kind live width is different, the light source that one of them of the light source of wherein used at least N-1 kind different wave length is wavelength is 193nm, and N be more than or equal to 3 integer.
In brief, in the method for formation pattern of the present invention, by providing at least three kinds of different optical mask patterns, recycle the light source of at least two kinds of different wavelength, at least three kinds of different optical mask patterns are transferred on the material layer of substrate, form the pattern that at least two kinds of live widths are different.The light source that one of them of the light source of at least two kinds of different wave lengths used is wavelength is 193nm.
The present invention proposes again a kind of method forming pattern.First, the target pattern of material layer is split into most local pattern.Then, form the axle center pattern between the first minimum local pattern of critical size in described local pattern with wet type 193nm light source, and form the second local pattern in described local pattern with dry type light source.Dry type light source is dry type 193nm light source, dry type 435nm light source, dry type 365nm light source or dry type 248nm light source.
In other words, embodiments of the invention can by for formed target pattern split into multiple local pattern, each local pattern carries out patterning manufacture craft by suitable exposure bench.Therefore, the embodiment of the present invention can carry out according to the size of the local pattern size of reality the light source that choice for use has required wavelength.Owing to not needing all to use the exposure bench of expensive advanced person to form the pattern of each required local, therefore, the cost of manufacture and the cost of procuring equipment significantly can be reduced.
Although disclose the present invention in conjunction with above embodiment; but itself and be not used to limit the present invention; this operator is familiar with in any art; without departing from the spirit and scope of the present invention; a little change and retouching can be done, therefore being as the criterion of should defining with the claim of enclosing of protection scope of the present invention.
Claims (16)
1. form a method for pattern, it is characterized in that comprising:
The optical mask pattern that N kind is different is provided; And
With the light source of at least N-1 kind different wave length, optical mask patterns different for described N kind is transferred on hard mask layer, formed hard mask pattern, one of light source of wherein said at least N-1 kind different wave length for wavelength be the light source of 193nm, and N be more than or equal to 3 integer.
2. the as claimed in claim 1 method forming pattern, another of the light source of wherein said at least N-1 kind different wave length is shorter than the light source of 193nm for wavelength is the light source of 436nm, wavelength is the light source of 365nm, wavelength is 248nm light source or wavelength.
3. the method forming pattern as claimed in claim 1, wherein said hard mask pattern has the pattern of the different live width of at least N-1 kind.
4. the method forming pattern as claimed in claim 1, wherein said hard mask pattern comprises the first hard mask pattern and the second hard mask pattern, and the size of wherein said first hard mask pattern is less than the size of described second hard mask pattern.
5. the method forming pattern as claimed in claim 4, be also included on described hard mask layer and form a sacrifice layer, the formation method of wherein said first hard mask pattern comprises:
On described sacrifice layer, the mask layer of the first patterning is formed, the light source of wherein said first light source to be wavelength be 193nm with the first photomask and one first light source;
Carry out the first etching process, by the design transfer of the mask layer of the first patterning to described sacrifice layer, to form at least one axle center pattern;
Clearance wall loop is formed around the pattern of described axle center;
Remove described axle center pattern;
Form the mask layer of the second patterning with the second photomask and secondary light source, the mask layer of described second patterning has an opening, exposes the described clearance wall loop of part at end of pattern place, described axle center;
With the mask layer of described second patterning for mask, carry out the second etching process, cut off described clearance wall loop, to form most clearance walls; And
With described clearance wall for mask, the 3rd etching process is carried out to described hard mask layer, to form described first hard mask pattern.
6. the method forming pattern as claimed in claim 5, the formation method of wherein said second hard mask pattern comprises:
On described hard mask layer, the mask layer of the 3rd patterning is formed with the 3rd photomask and the 3rd light source; And
With the mask layer of described 3rd patterning for mask, described 3rd etching process is carried out to described hard mask layer, to form described second hard mask pattern.
7. the method forming pattern as claimed in claim 6, the step wherein forming the mask layer of described 3rd patterning is carried out after described second etching process.
8. the method forming pattern as claimed in claim 6, the step wherein forming the mask layer of described 3rd patterning was carried out before the mask layer forming described second patterning.
9. the as claimed in claim 4 method forming pattern, wherein said second hard mask pattern is adjacent with described first hard mask pattern and contact.
10. the as claimed in claim 9 method forming pattern, wherein said hard mask pattern also comprises the 3rd hard mask pattern, and described 3rd hard mask pattern and described first hard mask pattern are separated by a distance.
11. methods forming as claimed in claim 4 patterns, wherein said second hard mask pattern and described first hard mask pattern are separated by a distance.
12. methods forming pattern as claimed in claim 1, also comprise with described hard mask pattern for mask, by the material layer pattern below described hard mask pattern.
13. 1 kinds of methods forming pattern, is characterized in that comprising:
The target pattern of material layer is split into most local pattern; And
The axle center pattern between the first minimum local pattern of critical size in described local pattern is formed with the first light source, and at least one second local pattern formed with at least one secondary light source in described local pattern, the wavelength of the first wherein said light source is less than the wavelength of described secondary light source, described first light source and described secondary light source one of them for wavelength be the light source of 193nm.
14. the as claimed in claim 13 method forming pattern, wherein another of wherein said first light source and described secondary light source is shorter than the light source of 193nm for wavelength is the light source of 436nm, wavelength is the light source of 365nm, wavelength is 248nm light source or wavelength.
15. 1 kinds of methods forming pattern, is characterized in that comprising:
The target pattern of material layer is split into most local pattern; And
Form the axle center pattern between the first minimum local pattern of critical size in described local pattern with wet type 193nm light source, and form at least one second local pattern in described local pattern with at least one dry type light source.
16. methods forming pattern as claimed in claim 15, wherein said dry type light source is dry type 193nm light source, dry type 435nm light source, dry type 365nm light source or dry type 248nm light source.
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| CN109427686A (en) * | 2017-08-29 | 2019-03-05 | 联华电子股份有限公司 | Isolation structure and forming method thereof |
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