CN104376851A - 用于垂直磁记录写入器的梯度写入间隙 - Google Patents

用于垂直磁记录写入器的梯度写入间隙 Download PDF

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CN104376851A
CN104376851A CN201410400273.5A CN201410400273A CN104376851A CN 104376851 A CN104376851 A CN 104376851A CN 201410400273 A CN201410400273 A CN 201410400273A CN 104376851 A CN104376851 A CN 104376851A
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L·曾
D·韩
Z·白
L·王
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Western Digital Technologies Inc
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    • G11B5/187—Structure or manufacture of the surface of the head in physical contact with, or immediately adjacent to the recording medium; Pole pieces; Gap features
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
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    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
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    • G11B5/1278—Structure or manufacture of heads, e.g. inductive specially adapted for magnetisations perpendicular to the surface of the record carrier
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/187—Structure or manufacture of the surface of the head in physical contact with, or immediately adjacent to the recording medium; Pole pieces; Gap features
    • G11B5/1871—Shaping or contouring of the transducing or guiding surface
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
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    • G11B5/3116—Shaping of layers, poles or gaps for improving the form of the electrical signal transduced, e.g. for shielding, contour effect, equalizing, side flux fringing, cross talk reduction between heads or between heads and information tracks
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers

Abstract

本发明涉及用于垂直磁记录写入器的梯度写入间隙。本发明提供一种用于硬盘驱动器的磁写入器极。所述磁写入器极包括由非磁性层形成的第一斜面，所述第一斜面以第一角度形成并且延伸到第一喉部高度。所述磁写入器极进一步包括由所述非磁性层形成的第二斜面，其以大于所述第一角度的第二角度从所述第一斜面向远端延伸并且延伸到第二喉部高度。所述磁写入器极进一步包括由所述非磁性层形成的第三斜面，其以大于所述第二角度的第三角度从所述第二斜面向远端延伸。

Description

用于垂直磁记录写入器的梯度写入间隙
相关申请案的交叉引用
本申请要求2013年8月15日提交的美国临时申请序列号61/866,137的权益，其全部内容通过引用并入本文，如同完全在本文中阐述一样。
背景技术
磁盘驱动器通常使用驻留在滑动块上的磁头从磁性介质中读取以及写入磁性介质。在读取以及写入操作期间，驻留在磁头中的读取和写入转换器以小的受控间距在磁性介质(磁盘)上方飞越。由于磁盘以高速旋转，空气轴承在磁头与磁盘之间形成，所述空气轴承提供受控磁头到磁盘间距。从写入转换器磁极尖端发出的磁场切换磁性介质的磁化，即，写入到介质中。
图1示出用于数据存储的常规磁盘驱动器10。附图未按比例绘制并且为了清楚起见仅描绘了某些结构。磁盘介质50附接到主轴马达以及毂20上。主轴马达以及毂20以箭头55所示的方向旋转介质50。磁头堆组件(HSA)60包括致动器臂70上的磁记录头30，并且通过将音圈马达(VCM)25定位在所需数据磁道(在此实例中示为记录磁道40)上来定位致动器臂70，以便将数据写入到介质50上。
图1A示出包括磁头30以及磁道40的图1的区段的放大视图。将磁记录转换器90制造在滑动块80上。滑动块80可以附接到悬架75上并且悬架75可以附接到致动器臂70，如图2中所示。滑动块80可以包括读取转换器93。
再次参考图1A，滑动块80被示出在记录磁道40上方。介质50以及磁道40在滑动块80下以由箭头42所示的下行磁道方向移动。横向磁道方向由箭头41示出。
磁记录转换器90具有前边缘91以及后边缘92。在此实施例中，记录转换器90的后边缘92是磁转换器90的最后部分，当介质50在滑动块80下以下行磁道方向42移动时，所述磁转换器写入到记录磁道40上。
图2示出图1中所示的磁盘驱动器10的侧视图。至少一个磁盘介质50安装到主轴马达以及毂20上。磁头磁盘组件60包括承载悬架75以及滑动块80的至少一个致动器臂70。滑动块80具有面向介质50的空气轴承表面(ABS)。当介质50在旋转并且致动器臂70定位在介质50之上时，滑动块80通过滑动块ABS与介质50的表面之间产生的空气动力压力在介质50上方滑动。
图3示出可以实施在图2的滑动块80上的垂直磁记录(PMR)转换器的主磁极尖端区段300的透视图。主磁极尖端区段300具有面向ABS的磁极尖端面310。磁极尖端面310以梯形形状示出，所述梯形形状具有后边缘311、前边缘312、第一侧壁边缘313和第二侧壁边缘314。第一侧壁340从第一侧壁边缘313向远端延伸，第二侧壁350(不可见，与第一侧壁340相对)从第二侧壁边缘314向远端延伸，后侧壁320从后边缘311向远端延伸，以及前侧壁330(不可见，与后侧壁320相对)从前边缘312向远端延伸。
主磁极尖端区段300以具有比前边缘312更宽的后边缘311的在ABS处的梯形形状示出。然而，还可以使用其它形状。在其它实施例中，例如，侧壁边缘313和侧壁边缘314以及对应的侧壁340和侧壁350可以具有面元或弯曲的形状；前边缘312可以是小的，或形成一个点；以及不需要梯形形状，并且可以是矩形或具有侧壁的另一形状。以直线示出的磁极表面和边缘还可以实施为弯曲的或面元状的。所属领域的普通技术人员将认识到，可以使用这些形状、这些形状的组合或变体，以及其它形状。
图4图示了具有面向ABS490的写入转换器450和读取传感器410的PMR读/写磁头400的侧面截面视图。读取传感器410可以包括第一护罩411和第二护罩413以及传感器412。写入转换器450包括护罩414、主磁极401、协助磁极(或辅助磁极)401'、线圈440和线圈440'、前护罩417以及后护罩420。主磁极401具有后斜面401a以及前斜面401b。前非磁性间隙层415将主磁极401与下方的结构分离，并且后非磁性间隙层405将主磁极401与上方的结构分离。后非磁性间隙层405也称为“写入间隙”。非磁性间隔物406可以被包括在后斜面401a的一部分上以提供主磁极401与上方磁性结构之间的磁性分离。非磁性间隔物层402被示出在主磁极401的非倾斜区段上；然而，该非磁性间隔物层402可以在远离ABS490的任何点处开始提供在主磁极401上方，包括在斜面401a上。后晶种层407覆盖后非磁性间隙层405以及间隔物406。在前非磁性间隙层415与前护罩417之间提供前晶种层416。
从写入间隙中发出的磁场切换磁性介质的磁化，即，写入到介质中。在其它因素中，较小且受到更严格控制的磁写入场将允许更多的数据写入在同一空间中，从而增加了面积密度。因此，写入间隙特征在写入器性能中起到重要作用。
附图说明
附图仅出于说明的目的提供并且仅描绘典型的或示例性实施方案。提供这些附图以便于读者的理解并且不被认为是本发明的广度、范围或适用性的限制。为了图示的清楚性以及简易性，这些附图不必按比例绘制。
图1和1A示出常规硬盘驱动器的俯视图。
图2示出常规硬盘驱动器的侧视图。
图3提供了垂直磁记录(PMR)转换器的主磁极尖端区段的透视图。
图4提供了PMR读/写磁头的侧面截面视图。
图5A提供了具有恒定宽度写入间隙的PMR写入器结构的特写侧面截面视图。
图5B提供了根据本发明的一个实施例的具有梯度写入间隙的PMR写入器的特写侧面截面视图。
图6A和6B分别提供了具有标记的斜角的图5A和5B的PMR写入器结构。
图7提供了根据本发明的一个实施例的第一方法的图像流程图，通过所述第一方法可以形成梯度写入间隙。
图8提供了根据本发明的一个实施例的第二方法的图像流程图，通过所述第二方法可以形成梯度写入间隙。
图9提供了根据本发明的一个实施例的第三方法的图像流程图，通过所述第三方法可以形成梯度写入间隙。
具体实施方式
在以下描述中，阐述了许多特定细节以提供对本发明的各种实施例的透彻理解。然而，所属领域的技术人员将清楚，不必采用这些特定细节来实践本发明的各种实施例。在其它情况下，并未详细描述众所周知的组件或方法以避免对本发明的各种实施例的不必要的模糊。
垂直磁记录(PMR)写入器常用于现今的硬盘驱动器中。写入间隙特征是高密度PMR写入器中的重要方面，特别地具有超出～2000kFCI的线性密度的PMR写入器中的重要方面。随着不断增加的面积密度，写入间隙厚度继续按比例缩小并且通常严格受到原子层沉积的控制。写入器性能对写入间隙厚度非常敏感。通常，薄写入间隙将直接改进信噪比(SNR)，但使反向重写(revOW)退化。然而，在revOW上的改进通常将导致在广域磁道擦除(WATEr)上的性能损耗，因为改进的信号强度将倾向于引起到相邻磁道中增加的泄漏。主磁极与高力矩磁护罩之间的较小距离(即，薄写入间隙)将增加在空气轴承表面(ABS)处的场梯度，从而改进SNR。然而，薄非磁性写入间隙还引起在通量到达ABS之前的磁通量分流，从而损害revOW。
图5A示出具有通向非磁性间隔物514的写入间隙(WG)512的PMR写入器结构510a。写入间隙512的与非磁性间隔物514相对的端部与空气轴承表面518相互作用。在此构型中，写入间隙512具有大体上恒定的宽度。写入间隙512和非磁性间隔物514各自由非磁性材料组成，并且一起在主磁极511与后护罩513之间形成非磁性层。第二非磁性间隔物210还可以在主磁极511与后护罩513之间形成非磁性层的一部分。后护罩513还可以包括磁性晶种层515。薄写入间隙512改进了写入器510a的信噪比。然而，在通向非磁性间隔物514的写入间隙512的宽度上的突然改变导致在通量到达空气轴承表面518之前的磁通量分流。本发明所揭示的梯度写入间隙解决了这些问题。
根据本发明的一个实施例的包括梯度写入间隙(GWG)的PMR写入器510b在图5B中呈现。梯度写入间隙部分516添加为写入间隙512的一部分以随着写入间隙朝向非磁性间隔物514移动而逐渐增加写入间隙的宽度。像写入间隙512一样，梯度写入间隙部分516通常包括非磁性材料。此类非磁性材料的实例可以包括Ru或Al2O3。
图5A中的PMR写入器510a具有由写入间隙512形成的第一斜面517，所述第一斜面直接通向由非磁性间隔物514形成的第二斜面519。图5B中新添加的梯度写入间隙部分516产生第三斜面521，所述第三斜面形成比由第一斜面517形成的角度大并且比由第二斜面519形成的角度小的角度。以此方式，形成从写入间隙512到非磁性间隔物514的梯度。
在图5B中描绘的结构中，写入间隙512具有在空气轴承表面518处的薄开口，其增加了写入磁头的信噪比(SNR)。然而，梯度写入间隙的厚度随着它朝向非磁性间隔物514移动远离ABS518而逐渐增加，从而减少通量分流。以此方式，获得增加的SNR的益处，且同时通过逐渐增加写入间隙宽度而防止通量分流的问题。这可以大大改进装置性能。
图6A和6B分别提供具有相关斜角的标记的与图5A和5B相同的图像，以便展示梯度写入间隙。在图6A中，主磁极511与护罩513、515之间的非磁性层主要通过两个斜角限定：(1)处于第一角度520的接近ABS518的第一斜面517，以及(2)处于大于第一角度520的第二角度522的第二斜面519。
在图6B中，梯度写入间隙部分516被添加到写入间隙512中以产生梯度写入间隙。仍存在处于第一角度520(即，BV1A)的第一斜面517、处于第二角度522(即，BV2A)的第二斜面519，并且现在存在处于第三角度530(即，梯度写入间隙角度或GWGA)的中间第三斜面521。梯度写入间隙角度530产生从写入间隙512到非磁性间隔物514的更加平缓的过渡，即，梯度。因此，梯度写入间隙角度530大于第一角度520(BV1A)，并且小于第二角度522(BV2A)。另外，包括该附加梯度写入间隙部分516以产生梯度写入间隙，从而产生两个不同的喉部高度(throat height)，TH1和TH2(如图5和6中所示)。在TH2处写入间隙512的较窄开口增加SNR，而在TH1处的较宽写入间隙开口516将通量分流减到最少。
表1
表1提供了展示通过实施本发明所公开的梯度写入间隙可以获得的优点的数据。将具有恒定宽度写入间隙的写入磁头(行1)与根据本发明的一个实施例的具有梯度写入间隙的写入磁头(行2)进行比较。表中的数据示出，第一角度520(BV1A)是约28度，并且第二角度522(BV2A)是约65度，喉部高度是约90个单位。在GWG实施方式中，产生约49度的中间梯度写入间隙角度530(GWGA)。如关于图6所论述，梯度写入间隙实施方式产生两个不同的喉部高度。第一喉部高度是约75个单位，且第二喉部高度是约30个单位。表1中可见，通过添加梯度写入间隙，revOW从30.9增加到33.3。
在某些实施例中，可能期望写入间隙的恒定写入间隙宽度部分，即TH2，在长度上为零个单位。然而，实际上，还应该考虑到，用于磁写入头的搭接技术不是完全精确的，并且因此，恒定的写入间隙部分TH2允许在搭接过程中有一定的误差余量，而不会影响制造标准差。在任何情况下，应理解，这些情形两者(恒定写入间隙部分的包括或移除)都在本发明的范围内。
梯度写入间隙可以是当前PMR写入器的添加的特征。经提出以在PMR写入器中实施梯度写入间隙的一个过程是将非磁性间隔物514用作硬掩模以用于其遮蔽效应。具有恰当铣削角度以及扫描角度范围的离子束铣削过程将在后第一斜面517与第二斜面519的接合点处产生梯度写入间隙。现将更详细地论述用于形成梯度写入间隙的方法的实例。
下文描述本发明的示例性方法实施例。此方法可以分解为若干示例性组成部分：
-规则写入间隙(WG)沉积
-WG覆盖层沉积：以保护写入间隙不受梯度写入间隙(GWG)铣削的影响
-非磁性间隔物沉积
-GWG材料沉积：以控制GWG厚度
-GWG覆盖层沉积：用于铣削端点对齐
-通过离子铣削或任何其它适当的方法形成GWG。
这些组成部分可以用不同的方法重新布置以产生多种方法，通过所述多种方法形成示例性梯度写入间隙。为了提供可以如何重新布置这些步骤的实例，三种可能的方法在此处更加详细地论述为工艺路线1、2以及3，所述工艺路线分别在图7、8以及9中描绘为图像流程图。
图7提供了用以形成梯度写入间隙的第一工艺路线(工艺路线1)的逐步分解。工艺路线1可以概括为以下八个步骤，所述步骤展示在图7(a)到7(f)中：
0.BV1工艺(图7(a))——这是该工艺的起始点。在主磁极750上形成成角度的表面；
1.WG沉积——规则写入间隙层752沉积在主磁极750上。用于执行该步骤的一种可能的方法是快速ALD(原子层沉积)。替代的沉积方法可以包括物理气相沉积或溅镀。(图7(b))。写入间隙层可以包括非磁性材料。这种非磁性材料的实例可以包括Al2O3或Ru；
2.Ru STP——写入间隙停止层754沉积在规则写入间隙层752上以保护写入间隙752不受梯度写入间隙铣削过程的影响，所述铣削过程将在步骤7中更详细地论述。写入间隙停止层754可以包括Ru、Al2O3、Ta、非晶碳或类似材料；
3.间隔物FALD——非磁性间隔物756沉积在写入间隙752以及写入间隙停止层754上。与写入间隙层752非常类似，非磁性间隔物756可以包括非磁性材料，例如Ru或Al2O3。在一个特定实施例中，非磁性间隔物756可以包括与写入间隙层752不同的非磁性材料。例如，如果写入间隙层752包括Ru，那么非磁性间隔物756可以包括Al2O3，反之亦然。在一个特定实施例中，非磁性间隔物756可以使用快速ALD或任何其它适当的沉积方法来沉积；
4.BV2RIE——在非磁性间隔物756上形成第二停止层758。第二停止层758可以包括Ru、Al2O3、Ta、非晶碳或类似材料，并且可以经由反应性离子蚀刻(RIE)来形成(图7(c))；
5.GWG沉积——梯度写入间隙(GWG)层760沉积在写入间隙752以及非磁性间隔物756上。这可以经由快速ALD使用非磁性材料(诸如Ru或Al2O3)来执行(图7(d))；
6.GWG覆盖——GWG覆盖层762沉积在GWG层760上(图3(d))，所述GWG覆盖层可以包括Ru、Al2O3、Ta、非晶碳或类似材料；
7.GWG铣削——离子铣削用于使GWG层760成形(图3(e))。在图7(e)中可以看出，在写入间隙752正上方的GWG层760的一部分已经被铣削掉以在GWG层760中形成更加平缓的倾斜形状。重新成形的梯度写入间隙层760和写入间隙层752一起形成梯度写入间隙。此步骤产生三斜面表面，其中每个倾斜表面具有逐渐增加的角度。第一斜面753处于基本上由规则写入间隙层752的角度来确定的角度。第二斜面755由重新成形的梯度写入间隙层760形成，其中第二斜面755的角度大于第一斜面753的角度。并且接着第三斜面757从第二斜面755延伸，其中第三斜面757的角度基本上接近非磁性间隔物756的角度，并且大于第一斜面753以及第二斜面755的角度。
图7(f)提供了已经使用上述的工艺1步骤形成的实际梯度写入间隙的图像。可以看出，规则写入间隙层752具有在左侧通向空气轴承表面(ABS)的较窄开口，并且GWG层760在它通向非磁性间隔物756时引起写入间隙的逐渐加宽。
图8提供了根据本发明的一个实施例的可以用于形成梯度写入间隙的第二工艺路线(工艺路线2)的逐步分解。工艺路线2可以概括为以下九个步骤，如图8中所示：
0.BV1工艺——类似于工艺路线1，该工艺以在主磁极750上形成第一成角度的表面开始；
1.WG沉积——再次，如在工艺路线1中，规则写入间隙层752沉积在主磁极750上。用于执行此步骤的一种可能的方法是快速ALD(原子层沉积)。替代的沉积方法可以包括物理气相沉积或溅镀(图8(a))；
2.Ru STP——写入间隙停止层754沉积在规则写入间隙层752上以保护规则写入间隙层752不受步骤7中的GWG铣削过程的影响；
3.GWG沉积——这是工艺路线2开始不同于工艺路线1的地方。在工艺路线1中，非磁性间隔物756沉积在规则写入间隙层752上，并且梯度写入间隙层760沉积在规则写入间隙层以及非磁性间隔物两者上。在此，在工艺路线2中，梯度写入间隙层760在非磁性间隔物756的沉积之前沉积在写入间隙层752上。梯度写入间隙层760的沉积可以经由快速ALD或任何其它适当的沉积方法来执行。梯度写入间隙层760可以包括非磁性材料，例如Ru或Al2O3(图8(c))；
4.GWG覆盖——梯度写入间隙覆盖层762沉积在梯度写入间隙层760上(图8(c))，所述梯度写入间隙覆盖层可以包括Ru、Ta、Al2O3或类似的非磁性材料；
5.BV2FALD——现在在规则写入间隙层752以及梯度写入间隙层760上形成非磁性间隔物756(即，BV2)(图8(d))；
6.BV2RIE——在非磁性间隔物756上形成BV2停止层758。BV2停止层758可以包括Ru、Ta、Al2O3或类似非磁性材料，并且可以经由反应性离子蚀刻(RIE)来形成(图8(d))；
7.GWG铣削——离子铣削现在可以用于使GWG层760成形(图8(e))。在图8(e)中可以看出，在写入间隙752正上方的GWG层760的一部分已经被铣削掉从而在GWG层760中形成更加平缓的倾斜形状。再次，在角度上逐渐增加的三个连续的倾斜表面已经形成：第一斜面753具有接近规则写入间隙层752的第一角度，第二斜面755具有第二角度，所述第二角度铣削到梯度写入间隙层760中并且大于第一角度，以及第三斜面757具有基本上由非磁性间隔物756确定的第三角度，第三角度大于第一斜面753以及第二斜面755的角度。
8.Ru RIE——在重新成形的GWG层760上形成最后的Ru覆盖层764。Ru覆盖层764可以使用Ru或另一类似的非磁性材料经由反应性离子蚀刻来形成。
图9提供了根据本发明的一个实施例的用以形成梯度写入间隙的第三工艺路线(工艺路线3)的逐步分解。工艺路线3可以使用以下步骤来概括，如图9中所示：
1.以下步骤中的每个已经在图9(a)中执行：
BV1工艺——类似于工艺路线1以及2，该工艺以在主磁极750上形成第一成角度的表面开始；
沉积BV3停止层——不同于工艺路线1以及2，工艺路线3包括沉积在主磁极750上的BV3非磁性层770；
间隔物FALD——在BV3非磁性层770上形成非磁性间隔物756(即，BV2)。非磁性间隔物756可以包括非磁性材料，如先前已经论述的；
BV2RIE——在非磁性间隔物756上形成BV2停止层758。BV2停止层758可以包括Ru或其它非磁性材料，并且可以经由反应性离子蚀刻(RIE)形成；
2.BV3铣削——BV3非磁性层770使用离子铣削重新成形；
3.WG沉积——规则写入间隙层752沉积在主磁极750、非磁性间隔物756以及BV3非磁性层770上。这可以使用快速ALD来执行；
4.Ru STP——写入停止层756沉积在规则写入间隙层752(例如，Ru或非晶碳或类似材料)上；
5.GWG FALD——梯度写入间隙层760沉积在规则写入间隙层752上(例如快速ALD以及Al2O3等)；
6.Ru覆盖——梯度写入间隙层762沉积在梯度写入间隙760上(例如，Ru)；
7.GWG铣削——梯度写入间隙层760使用离子铣削来成形。类似于工艺1以及2的最终结果(图7到8)，这导致形成第一斜面753、第二斜面755以及第三斜面757。
8.Ru RIE——在重新成形的梯度层760上形成最后的Ru覆盖层764。
在上文所论述的工艺中的每种中，规则写入间隙层752、梯度写入间隙层760和非磁性间隔物756一起在主磁极750与磁护罩之间形成非磁性层。如上文已经大量论述的，三个不同工艺路线中的每种(图7到9)都实现楔形梯度写入间隙的最终目标。梯度写入间隙具有在空气轴承表面处的较窄写入间隙开口以及到非磁性间隔物756中的缓坡。缓坡是通过使梯度写入间隙层760成形以形成斜面755来实现，所述斜面具有比由规则写入间隙层752形成的角度大并且比由非磁性间隔物756形成的角度小的角度。
在前述说明书中，本发明的实施例已经参考其具体示例性特征进行描述。然而，显而易见的是，在不脱离本发明的较宽广的精神和范围的情况下，可以对其进行各种修改和改变。因此，本说明书和附图应当作说明性意义而非限制性意义。尽管已经仅参考本发明的优选实施例来描述本发明，但所属领域的技术人员将了解，在不脱离本发明的情况下，可以进行各种修改。因此，本发明仅通过所附权利要求来限定。

Claims (21)

1.一种磁写入器极，其包括：
由非磁性层形成的第一斜面，所述第一斜面处于第一角度并且延伸到第一喉部高度；
由所述非磁性层形成的第二斜面，所述第二斜面以大于所述第一角度的第二角度从所述第一斜面向远端延伸并且延伸到第二喉部高度；以及
由所述非磁性层形成的第三斜面，所述第三斜面以大于所述第二角度的第三角度从所述第二斜面向远端延伸。
2.根据权利要求1所述的磁写入器极，其中所述第一角度在10与40度之间，所述第二角度在11与60度之间，以及所述第三角度在12与90度之间。
3.根据权利要求2所述的磁写入器极，其中所述第一角度在20与40度之间，所述第二角度在30与60度之间，以及所述第三角度在50与90度之间。
4.根据权利要求1所述的磁写入器极，其中所述第一喉部高度比所述第二喉部高度短。
5.根据权利要求4所述的磁写入器极，其中所述第二斜面使用离子铣削来形成。
6.一种用于形成磁记录极的方法，其包括：
沉积写入间隙层；
沉积梯度写入间隙层，所述写入间隙层和所述梯度写入间隙层彼此连通以形成写入间隙；以及
使所述梯度写入间隙层成形，以使由所述写入间隙层和所述梯度写入间隙层形成的所述写入间隙在第一端部上比在第二端部上更窄，其中
所述写入间隙经配置以与所述第一端部上的空气轴承表面和所述第二端部上的非磁性间隔物相互作用。
7.根据权利要求6所述的方法，其进一步包括沉积非磁性间隔物，其中所述非磁性间隔物包括非磁性材料。
8.根据权利要求7所述的方法，其中所述写入间隙层在所述非磁性间隔物沉积之前沉积。
9.根据权利要求8所述的方法，其中所述非磁性间隔物在所述梯度写入间隙层沉积之前沉积，所述非磁性间隔物沉积在所述写入间隙层上，并且所述梯度写入间隙层沉积在所述写入间隙层以及所述非磁性间隔物上。
10.根据权利要求8所述的方法，其中所述非磁性间隔物在所述梯度写入间隙层沉积之后沉积，并且所述非磁性间隔物沉积在所述梯度写入间隙层上。
11.根据权利要求7所述的方法，其中所述非磁性间隔物在所述写入间隙层沉积之前沉积，并且所述写入间隙层沉积在所述非磁性间隔物上。
12.根据权利要求7所述的方法，其中所述非磁性间隔物包括Ru或Al2O3中的至少一个。
13.根据权利要求6所述的方法，其中所述写入间隙层使用原子层沉积来沉积。
14.根据权利要求6所述的方法，其中沉积所述写入间隙层进一步包括将写入间隙停止层沉积在所述写入间隙层上，其中所述写入间隙停止层保护所述写入间隙层。
15.根据权利要求6所述的方法，其中所述梯度写入间隙使用快速ALD来沉积。
16.根据权利要求6所述的方法，其中所述梯度写入间隙包括非磁性材料。
17.根据权利要求16所述的方法，其中所述梯度写入间隙包括Ru或Al2O3中的至少一个。
18.一种硬盘驱动器，其包括：
磁写入器极，其具有：
由非磁性层形成的第一斜面，所述第一斜面处于第一角度并且延伸到第一喉部高度；
由所述非磁性层形成的第二斜面，所述第二斜面以大于所述第一角度的第二角度从所述第一斜面向远端延伸并且延伸到第二喉部高度；以及
由所述非磁性层形成的第三斜面，所述第三斜面以大于所述第二角度的第三角度从所述第二斜面向远端延伸。
19.根据权利要求18所述的硬盘驱动器，其中所述第一角度在10与40度之间，所述第二角度在11与60度之间，以及所述第三角度在12与90度之间。
20.根据权利要求18所述的硬盘驱动器，其中所述第一喉部高度比所述第二喉部高度短。
21.根据权利要求18所述的硬盘驱动器，其中所述第二斜面使用离子铣削来形成。
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US9042051B2 (en) 2015-05-26
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US20150049400A1 (en) 2015-02-19

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