CN104425224A - Method for preparing mask layer of III family compound substrate - Google Patents
Method for preparing mask layer of III family compound substrate Download PDFInfo
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- CN104425224A CN104425224A CN201310392230.2A CN201310392230A CN104425224A CN 104425224 A CN104425224 A CN 104425224A CN 201310392230 A CN201310392230 A CN 201310392230A CN 104425224 A CN104425224 A CN 104425224A
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- photoresist
- mask
- mask layer
- gallium compound
- metal level
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
Abstract
The invention provides a method for preparing a mask layer of a III family compound substrate. The method comprises the following steps of depositing a photoresist, namely depositing the photoresist on the surface of an epitaxial layer of a gallium compound; exposing the photoresist; developing the photoresist, namely developing the exposed photoresist; evaporating the mask layer, namely evaporating at least one isolation layer on the surface of the photoresist and on the surface, uncovered by the photoresist, of the epitaxial layer of the gallium compound, and evaporating at least one metal layer on the surface of the isolation layer, wherein the isolation layer is made of a material capable of preventing a metal material of the metal layer from spreading to the epitaxial layer of the gallium compound, and the metal layer is made of a material capable of improving an etching selection ratio of the mask layer to the epitaxial layer of the gallium compound; peeling the photoresist, namely peeling the photoresist and the isolation layer and the metal layer on the photoresist. According to the method for preparing the mask layer of the III family compound substrate, the etching selection ratio of the mask layer to the epitaxial layer of the gallium compound is improved on the premise of not damaging the surface of the epitaxial layer of the gallium compound.
Description
Technical field
The present invention relates to semiconductor etching techniques field, particularly a kind of mask layer preparation method of III compounds of group substrate.
Background technology
GaN(gallium nitride) based light-emitting diode has life-span long, shock-resistant, antidetonation and energy-efficient etc. excellent specific property because of it, and is widely used in the aspects such as image display, signal designation, illumination and basic research.At present, in order to improve the luminous efficiency of LED, increasing manufacturer starts the novel lithographic technique adopting GaN deep etching, that is: in the GaN epitaxial layer of III compounds of group substrate, etching depth is approximately the groove of 8 μm.
Fig. 1 is the schematic flow sheet of existing a kind of GaN deep etching technique.This technique mainly comprises the following steps:
GaN epitaxial layer preparation process, epitaxial growth GaN epitaxial layer on the surface of a substrate, wherein, the material of substrate can adopt Al
2o
3deng III compounds of group; The thickness of GaN epitaxial layer is approximately 8 μm.
Mask deposition step, at GaN epitaxial layer surface deposition photoresist mask.
Mask exposure step, exposes photoresist by mask aligner and mask plate.
Mask development step, develops to the photoresist exposed, to form figure.
GaN epitaxial layer etch step, etches GaN epitaxial layer using photoresist mask as mask plate, with by the graph copying of photoresist in GaN epitaxial layer, wherein, control etch period and reach the degree of depth needed for technique to make the groove of GaN epitaxial layer.In addition, in order to ensure that the figure of GaN epitaxial layer is not etched, require that the thickness of photoresist mask can ensure can not be totally consumed after completing etching technics.
There is following problem in actual applications in above-mentioned GaN deep etching technique; that is: due to photoresist mask lower with the etching selection of GaN epitaxial layer (being approximately 1: 1); cause when carrying out GaN epitaxial layer etch step; photoresist mask was often totally consumed before the groove of GaN epitaxial layer reaches needed for technique the degree of depth, thus GaN epitaxial layer surface cannot be protected not to be etched.And, if increase the thickness of photoresist mask, then there will be again the problem being difficult to expose completely photoresist mask.
For this reason, in existing another kind of GaN deep etching technique, by adopting SiO
2or SiN material replaces photoresist as mask, improves the etching selection ratio of mask and GaN epitaxial layer.As shown in Figure 2, this technique mainly comprises the following steps:
GaN epitaxial layer preparation process, epitaxial growth GaN epitaxial layer on the surface of a substrate, wherein, the material of substrate can adopt Al
2o
3deng III compounds of group; The thickness of GaN epitaxial layer is approximately 8 μm.
Mask deposition step, at GaN epitaxial layer surface deposition SiO
2mask.
Photoresist deposition step, at SiO
2mask surface deposition photoresist.
Photoresist step of exposure, exposes photoresist by mask aligner and mask plate.
Photoresist developing step, develops to the photoresist exposed, to form figure.
Mask etching step, etches SiO using photoresist as mask plate
2mask, with by the copying image of photoresist to SiO
2on mask.
GaN epitaxial layer etch step, etching GaN epitaxial layer, with SiO
2the graph copying of mask, in GaN epitaxial layer, wherein, controls etch period and reaches the degree of depth needed for technique to make the groove of GaN epitaxial layer.
Due to SiO
2mask higher with the etching selection of GaN epitaxial layer (being approximately 7: 1), thus when carrying out GaN epitaxial layer etch step, SiO
2mask is not totally consumed before can ensureing the degree of depth reaching needed for technique at the groove of GaN epitaxial layer, thus under the condition of same mask thickness, the etching technics of gallium compound epitaxial loayer can be made to obtain larger etching depth.But, adopt SiO
2or SiN material can exist following problems again in actual applications as mask, that is:
When carrying out mask deposition step, need the method deposition SiO adopting vapour deposition
2or SiN mask, in the process, plasma is known from experience and is etched GaN epitaxial layer surface because producing automatic bias on substrate, causes GaN epitaxial layer surface damage, thus step voltage before causing chip VF() value increases, and then chip quality reduced.
Therefore, the etching selection ratio how improving mask and GaN epitaxial layer under ensureing not damage the prerequisite on GaN epitaxial layer surface is current problem demanding prompt solution.
Summary of the invention
The present invention is intended at least to solve one of technical problem existed in prior art, propose a kind of mask layer preparation method of III compounds of group substrate, it can improve the etching selection ratio of mask layer and GaN epitaxial layer under ensureing not damage the prerequisite on GaN epitaxial layer surface.
A kind of mask layer preparation method of III compounds of group substrate being provided for realizing object of the present invention, comprising lower step:
Photoresist deposition step, at gallium compound epi-layer surface deposition photoresist;
Photoresist step of exposure, exposes photoresist;
Photoresist developing step, develops to the photoresist exposed, to form figure;
Mask evaporation step, evaporation at least one deck separator in the gallium compound epi-layer surface that photoresist is not covered by described photoresist on the surface and, afterwards evaporation at least one deck metal level again in described insulation surface; Wherein, described separator adopts the material that can prevent the metal material of described metal level from diffusing to described gallium compound epitaxial loayer to make; Described metal level adopts the material that can improve the etching selection ratio of mask layer and gallium compound epitaxial loayer to make;
Photoresist lift off step, stripping photoresist and on separator and metal level, only retain the separator of evaporation in gallium compound epi-layer surface and metal level as mask layer.
Wherein, in described mask evaporation step, the material of described separator comprises tin-doped indium oxide.
Wherein, in described mask evaporation step, the material of described metal level comprises nickel or chromium.
Wherein, in described mask evaporation step, adopt electron beam evaporation process successively separator and metal level described in evaporation.
Wherein, in described photoresist lift off step, adopt akaline liquid by photoresist and on separator and metal level peel off.
Wherein, after described mask strip step, also comprise the steps:
Gallium compound epitaxial loayer etch step, using the mask layer that is made up of described separator and metal level as mask plate etching gallium compound epitaxial loayer, with by the graph copying of described mask layer on gallium compound epitaxial loayer.
Wherein, after described gallium compound epitaxial loayer etch step, also comprise the steps:
Mask strip step, peels off the mask layer remained in gallium compound epi-layer surface.
Wherein, the material of described gallium compound epitaxial loayer comprises gallium nitride or GaAs.
Wherein, the material of described III compounds of group substrate comprises alundum (Al2O3).
Wherein, in described photoresist step of exposure, by mask aligner and mask plate, photoresist is exposed.
The present invention has following beneficial effect:
The mask layer preparation method of III compounds of group substrate provided by the invention, it is by successively obtaining at least one deck separator and at least one deck metal level in the mode of evaporation on the surface and in gallium compound epi-layer surface not covered by photoresist at photoresist, afterwards with peel off mode remove photoresist and on separator and metal level, and only retain the separator of evaporation in gallium compound epi-layer surface and metal level, the mask layer of the gallium compound epitaxial loayer of the double layer material with predetermined pattern can be obtained, and, above-mentioned separator adopts the material that can prevent the metal material of metal level from diffusing to gallium compound epitaxial loayer to make, above-mentioned metal level adopts the material that can improve the etching selection ratio of mask layer and gallium compound epitaxial loayer to make.This compared with prior art, the etching selection ratio of mask layer and gallium compound epitaxial loayer can be improved by metal level, thus can ensure that mask layer was not totally consumed before the groove of gallium compound epitaxial loayer reaches the degree of depth needed for technique, and then under the condition of same mask layer thickness, the etching technics of gallium compound epitaxial loayer can be made to obtain larger etching depth.
In addition, mask layer preparation method due to III compounds of group substrate provided by the invention is the mask layer adopting the mode of evaporation and stripping to obtain the gallium compound epitaxial loayer with predetermined pattern, and can prevent the metal material of metal level from diffusing to gallium compound epitaxial loayer by separator, the mode etching mask layer of vapour deposition is adopted in this and prior art, so that the copying image of photoresist is compared to this mask layer, gallium compound epi-layer surface can be avoided to sustain damage, thus chip VF value can be reduced, and then chip quality can be improved.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of existing a kind of GaN deep etching technique;
Fig. 2 is the schematic flow sheet of existing another kind of GaN deep etching technique;
The FB(flow block) of the mask layer preparation method of the III compounds of group substrate that Fig. 3 provides for the embodiment of the present invention; And
The schematic flow sheet of the mask layer preparation method of the III compounds of group substrate that Fig. 4 provides for the embodiment of the present invention.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing, the mask layer preparation method to III compounds of group substrate provided by the invention is described in detail.
The FB(flow block) of the mask layer preparation method of the III compounds of group substrate that Fig. 3 provides for the embodiment of the present invention.The schematic flow sheet of the mask layer preparation method of the III compounds of group substrate that Fig. 4 provides for the embodiment of the present invention.See also Fig. 3 and Fig. 4, this mask layer preparation method comprises lower step:
Gallium compound epitaxial loayer preparation process, on the surface of a substrate epitaxial growth gallium compound epitaxial loayer.Wherein, gallium compound epitaxial loayer comprises gallium nitride or GaAs; The material of substrate comprises III compounds of group of alundum (Al2O3) etc.
Photoresist deposition step, at gallium compound epi-layer surface deposition photoresist.
Photoresist step of exposure, exposes photoresist by mask aligner and mask plate.
Photoresist developing step, develops to the photoresist exposed, to form predetermined figure.
Mask evaporation step, at photoresist evaporation at least one deck separator on the surface and in gallium compound epi-layer surface not covered by photoresist, evaporation at least one deck metal level again in insulation surface afterwards.Wherein, separator adopts and can prevent the metal material of metal level from diffusing to gallium compound epitaxial loayer, and prevents plasma from gallium compound epitaxial loayer, forming the material of back bias voltage, such as, and tin-doped indium oxide (ITO, Indium Tin Oxide); Metal level adopts the material that can improve the etching selection ratio of mask layer and gallium compound epitaxial loayer, such as, and nickel, chromium etc.
Preferably, for the ease of stripping photoresist in follow-up photoresist lift off step, electron beam evaporation (E-Beam) the technique successively above-mentioned separator of evaporation and metal level can be adopted, this evaporation technology is compared with the heating evaporation technique of routine, it without the need to heating photoresist in the process of evaporation, thus photoresist can be prevented to be difficult to because being heated carbonization peel off.
Photoresist lift off step, stripping photoresist and on separator and metal level, and only retain the separator of evaporation in gallium compound epi-layer surface and metal level, thus on gallium compound epitaxial loayer, form the mask layer be made up of separator and metal level with predetermined pattern.The mode peeled off is specifically as follows: remove photoresist by alkaline solution, the separator on photoresist and mask layer can be made to remove in the lump.
After completing above-mentioned mask layer preparation method, start to carry out gallium compound epitaxial loayer etch step, particularly, using the mask layer that is made up of above-mentioned separator and metal level as mask plate etching gallium compound epitaxial loayer, with by the graph copying of this mask layer on gallium compound epitaxial loayer.In the process of etching, should etch period be controlled, reach the degree of depth needed for technique to make the groove of gallium compound epitaxial loayer; And; suitably should set the thickness of mask layer; that is: the number of plies of separator and the thickness of every layer of separator is set; and the thickness of metal level; to ensure that mask layer can not be totally consumed after completing etching technics, thus realize in whole etching process, protect GaN epitaxial layer surface not to be etched.
Mask strip step, peels off the mask layer remained in gallium compound epi-layer surface.In actual applications, if the material of mask layer adopts composite material or the Ni of ITO and Cr, usually the removals such as acid solution are adopted; If the material of mask layer adopts ITO, wang aqueous solution is usually adopted to remove.
The mask layer preparation method of the III compounds of group substrate that the embodiment of the present invention provides, it adopts double layer material as the mask layer of gallium compound epitaxial loayer, namely, can prevent the metal material of metal level from diffusing to gallium compound epitaxial loayer, and prevent plasma from gallium compound epitaxial loayer, forming the separator of back bias voltage, and the metal level of etching selection ratio of mask layer and gallium compound epitaxial loayer can be improved, this with adopt in prior art photoresist as gallium compound epitaxial loayer mask layer compared with, the etching selection ratio of mask layer and gallium compound epitaxial loayer can be improved, such as, adopt the metal level that the metal such as nickel or chromium makes, the etching selection ratio of itself and gallium nitride can reach 20:1, thus can ensure that mask layer was not totally consumed before the groove of gallium compound epitaxial loayer reaches the degree of depth needed for technique, and then under the condition of same mask layer thickness, the etching technics of gallium compound epitaxial loayer can be made to obtain larger etching depth.
In addition, the mask layer preparation method of the III compounds of group substrate provided due to the embodiment of the present invention is the mask layer adopting the mode of evaporation and stripping to obtain the gallium compound epitaxial loayer with predetermined pattern, and can prevent the metal material of metal level from diffusing to gallium compound epitaxial loayer by separator, the mode etching mask layer of vapour deposition is adopted in this and prior art, so that the copying image of photoresist is compared to this mask layer, gallium compound epi-layer surface can be avoided to sustain damage, thus chip VF value can be reduced, and then chip quality can be improved.
Be understandable that, the illustrative embodiments that above execution mode is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (10)
1. a mask layer preparation method for III compounds of group substrate, is characterized in that, comprises lower step:
Photoresist deposition step, at gallium compound epi-layer surface deposition photoresist;
Photoresist step of exposure, exposes photoresist;
Photoresist developing step, develops to the photoresist exposed, to form figure;
Mask evaporation step, evaporation at least one deck separator in the gallium compound epi-layer surface that photoresist is not covered by described photoresist on the surface and, afterwards evaporation at least one deck metal level again in described insulation surface; Wherein, described separator adopts the material that can prevent the metal material of described metal level from diffusing to described gallium compound epitaxial loayer to make; Described metal level adopts the material that can improve the etching selection ratio of mask layer and gallium compound epitaxial loayer to make;
Photoresist lift off step, stripping photoresist and on separator and metal level, only retain the separator of evaporation in gallium compound epi-layer surface and metal level as mask layer.
2. the mask layer preparation method of III compounds of group substrate as claimed in claim 1, is characterized in that, in described mask evaporation step, the material of described separator comprises tin-doped indium oxide.
3. the mask layer preparation method of III compounds of group substrate as claimed in claim 1, is characterized in that, in described mask evaporation step, the material of described metal level comprises nickel or chromium.
4. the mask layer preparation method of III compounds of group substrate as claimed in claim 1, is characterized in that, in described mask evaporation step, adopts electron beam evaporation process successively separator and metal level described in evaporation.
5. the mask layer preparation method of III compounds of group substrate as claimed in claim 1, is characterized in that, in described photoresist lift off step, adopt akaline liquid by photoresist and on separator and metal level peel off.
6. the mask layer preparation method of III compounds of group substrate as claimed in claim 1, is characterized in that, after described mask strip step, also comprises the steps:
Gallium compound epitaxial loayer etch step, using the mask layer that is made up of described separator and metal level as mask plate etching gallium compound epitaxial loayer, with by the graph copying of described mask layer on gallium compound epitaxial loayer.
7. the mask layer preparation method of III compounds of group substrate as claimed in claim 6, is characterized in that, after described gallium compound epitaxial loayer etch step, also comprises the steps:
Mask strip step, peels off the mask layer remained in gallium compound epi-layer surface.
8. the mask layer preparation method of III compounds of group substrate as claimed in claim 1, is characterized in that, the material of described gallium compound epitaxial loayer comprises gallium nitride or GaAs.
9. the mask layer preparation method of III compounds of group substrate as claimed in claim 1, is characterized in that, the material of described III compounds of group substrate comprises alundum (Al2O3).
10. the mask layer preparation method of III compounds of group substrate as claimed in claim 1, is characterized in that, in described photoresist step of exposure, exposes photoresist by mask aligner and mask plate.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104966675A (en) * | 2015-07-06 | 2015-10-07 | 麦斯克电子材料有限公司 | Method of protecting part of a silicon dioxide film on the surface of a silicon chip by using a blue film |
| CN105047783A (en) * | 2015-05-31 | 2015-11-11 | 厦门大学 | Nitride semiconductor light-emitting device and preparation method thereof |
| CN106206874A (en) * | 2016-08-12 | 2016-12-07 | 泉州市三星消防设备有限公司 | A kind of electrode aberration ameliorative way of LED chip based on roughening epitaxial wafer |
| CN108690949A (en) * | 2017-04-06 | 2018-10-23 | 昆山工研院新型平板显示技术中心有限公司 | A kind of mask plate and preparation method thereof and evaporation coating method |
| CN112951953A (en) * | 2019-12-11 | 2021-06-11 | 深圳市聚飞光电股份有限公司 | LED printing method |
| CN113436548A (en) * | 2021-06-23 | 2021-09-24 | 南方科技大学 | Preparation method of black matrix |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108690949A (en) * | 2017-04-06 | 2018-10-23 | 昆山工研院新型平板显示技术中心有限公司 | A kind of mask plate and preparation method thereof and evaporation coating method |
| CN108690949B (en) * | 2017-04-06 | 2020-05-22 | 昆山工研院新型平板显示技术中心有限公司 | Mask plate, preparation method thereof and evaporation method |
| CN112951953A (en) * | 2019-12-11 | 2021-06-11 | 深圳市聚飞光电股份有限公司 | LED printing method |
| CN113436548A (en) * | 2021-06-23 | 2021-09-24 | 南方科技大学 | Preparation method of black matrix |
| CN113436548B (en) * | 2021-06-23 | 2024-01-30 | 南方科技大学 | Preparation method of black matrix |
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