CN104538282A - Growing method of vertical structure power device epitaxial layer and power device - Google Patents
Growing method of vertical structure power device epitaxial layer and power device Download PDFInfo
- Publication number
- CN104538282A CN104538282A CN201410785079.3A CN201410785079A CN104538282A CN 104538282 A CN104538282 A CN 104538282A CN 201410785079 A CN201410785079 A CN 201410785079A CN 104538282 A CN104538282 A CN 104538282A
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- CN
- China
- Prior art keywords
- power device
- transition zone
- growing method
- epitaxial loayer
- extension transition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000000034 method Methods 0.000 title claims abstract description 47
- 230000007704 transition Effects 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 229910002601 GaN Inorganic materials 0.000 claims description 15
- 238000013517 stratification Methods 0.000 claims description 15
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 8
- 238000001312 dry etching Methods 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 2
- 206010040844 Skin exfoliation Diseases 0.000 description 6
- 238000000407 epitaxy Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000035618 desquamation Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
Abstract
The invention discloses a growing method of a vertical structure power device epitaxial layer and a power device. The growing method mainly comprises the steps that (1) one or more epitaxial transition layers grow on a smooth substrate; (2) the surfaces of the epitaxial transition layers are subjected to partial etching treatment, so that epitaxial transition layers with rough faces are formed; and (3) after treatment in the step (2), a target epitaxial layer grows on the rough faces of the epitaxial transition layers. According to the growing method, the steps are simple, implementation is easy, the epitaxial layers growing through the method are good in quality, after the substrate is separated in the following step, the epitaxial layers can be kept in good smoothness, and following processes can be well achieved.
Description
Technical field
the present invention relates to a kind of growing method and power device thereof of vertical stratification power device epitaxial loayer.
Background technology
epitaxial growth has necessarily required, identical with Substrate orientation single crystalline layer along its original crystal orientation regrowth one deck in single crystalline substrate (substrate).
at present, when Grown epitaxial loayer, there will be following two kinds of problems: the epitaxial layer quality 1) grown at smooth substrate surface is poor; 2) on coarse substrate surface, be more conducive to the growth of epitaxial loayer, and epitaxial layer quality of growth is better than the quality grown at smooth substrate surface on it, but, when peeling off substrate in late stage process, the out-of-flatness due to substrate surface causes the epi-layer surface planarization after peeling off poor.Therefore, not only quality is good to make the epitaxial loayer of Grown in the urgent need to a kind of method at present, and at the bottom of peeling liner after its surface planarization might as well.
Summary of the invention
the object of this invention is to provide a kind of growing method of vertical stratification power device epitaxial loayer, the method step is simple, not only increases the quality of epitaxial loayer, simultaneously in late stage process at the bottom of peeling liner time ensure that the planarization of this epitaxial loayer.
for achieving the above object, the technical solution used in the present invention is: a kind of growing method of vertical stratification power device epitaxial loayer, mainly comprises the following steps:
1) at one or more layers extension transition zone of smooth Grown;
2) partially-etched process is carried out to the upper surface of described extension transition zone, to form the extension transition zone with matsurface;
3) through step 2) regrowth one deck targeted epitaxial layer on the matsurface of described extension transition zone after etch processes.
preferably, the described Grown in described step 1) has extension transition zone described in multilayer, and the material of every layer of described extension transition zone is identical or different.
further preferably, the material of every layer of described extension transition zone is gallium nitride, aluminium nitride or aluminum gallium nitride.
preferably, described substrate is Sapphire Substrate, silicon substrate or silicon carbide substrates.
preferably, described step 2) in adopt the method for dry etching to carry out etch processes to described extension transition zone.
further preferably, described targeted epitaxial layer is epitaxial layer of gallium nitride.
another object of the present invention is to provide the obtained power device of a kind of growing method based on described vertical stratification power device epitaxial loayer.
due to the utilization of technique scheme, the present invention compared with prior art has following advantages: the growing method of vertical stratification power device epitaxial loayer of the present invention, have employed on substrate, first to grow regrowth targeted epitaxial layer after one or more layers extension transition zone, growing method of the present invention not only solves the ropy problem that direct growth epitaxial loayer in smooth substrates causes, also solving direct growth epitaxial loayer on coarse substrate carries out the follow-up problem to causing epi-layer surface planarization difference during substrate desquamation more simultaneously, the method step is simple, not only quality is good for the epitaxial loayer of growth, and might as well by its planarization after substrate desquamation in late stage process, be conducive to follow-up processes.
Accompanying drawing explanation
accompanying drawing 1 is substrat structure schematic diagram;
accompanying drawing 2 is Grown extension transition zone schematic diagram;
accompanying drawing 3 is extension transition zone etch processes schematic diagram;
accompanying drawing 4 is growth target substrate schematic diagram;
wherein: 1, substrate; 2, extension transition zone; 3, targeted epitaxial layer.
Embodiment
below in conjunction with drawings and Examples, technical scheme of the present invention is further elaborated.
embodiment 1
the growing method of a kind of vertical stratification power device epitaxial loayer described in the present embodiment, mainly comprises the following steps:
1) see shown in Fig. 1, Fig. 2, smooth Sapphire Substrate 1 grows one deck epitaxy of gallium nitride transition zone 2;
2) shown in Figure 3, adopt the method for dry etching to carry out partially-etched process on this epitaxy of gallium nitride transition zone 2 surface, have patterned epitaxy of gallium nitride transition zone 2 to be formed, described patterned epitaxy of gallium nitride transition zone 2 has certain matsurface;
3) shown in Figure 4, regrowth one deck targeted epitaxial layer 3 on the rough surface of the epitaxy of gallium nitride transition zone 2 after etch processes, here targeted epitaxial layer 3 is epitaxial layer of gallium nitride.
embodiment 2
the growing method of the vertical stratification power device epitaxial loayer described in the present embodiment, mainly comprises the following steps:
1) see shown in Fig. 1, Fig. 2, on smooth silicon substrate 1, growth has multilayer epitaxial transition zone 2;
2) shown in Figure 3, adopt the method for dry etching to carry out partially-etched process to all extension transition zone 2 surfaces, to form the extension transition zone 2 with matsurface;
3) shown in Figure 4, regrowth one deck targeted epitaxial layer 3 on the matsurface of the extension transition zone 2 after etching processing, i.e. epitaxial layer of gallium nitride.
here, the material of multilayer epitaxial transition zone 2 can be identical material also can be unlike material, and the material of every layer of extension transition zone 2 can be gallium nitride, aluminium nitride or aluminum gallium nitride.
here this substrate 1 can also be silicon carbide substrates or Sapphire Substrate.
in sum, this method is passed through first at smooth Grown extension transition zone, and etch processes is carried out to this extension transition zone form certain matsurface, then regrowth targeted epitaxial layer on the rough surface of this extension transition zone again, not only quality is good to make grown epitaxial loayer, and follow-up to substrate laser lift-off after, the epitaxial loayer of this power device still can keep good planarization, is conducive to follow-up processes.
above-described embodiment is only for illustrating technical conceive of the present invention and feature; its object is to person skilled in the art can be understood content of the present invention and be implemented; can not limit the scope of the invention with this; all equivalences done according to Spirit Essence of the present invention change or modify, and all should be encompassed in protection scope of the present invention.
Claims (7)
1. a growing method for vertical stratification power device epitaxial loayer, is characterized in that, mainly comprises the following steps:
1) at one or more layers extension transition zone of smooth Grown;
2) partially-etched process is carried out to the upper surface of described extension transition zone, to form the extension transition zone with matsurface;
3) through step 2) regrowth one deck targeted epitaxial layer on the matsurface of described extension transition zone after etch processes.
2. the growing method of vertical stratification power device epitaxial loayer according to claim 1, it is characterized in that: the described Grown in described step 1) has extension transition zone described in multilayer, the material of every layer of described extension transition zone is identical or different.
3. the growing method of vertical stratification power device epitaxial loayer according to claim 2, is characterized in that: the material of every layer of described extension transition zone is gallium nitride, aluminium nitride or aluminum gallium nitride.
4. the growing method of vertical stratification power device epitaxial loayer according to claim 1, is characterized in that: described substrate is Sapphire Substrate, silicon substrate or silicon carbide substrates.
5. the growing method of vertical stratification power device epitaxial loayer according to claim 1, is characterized in that: described step 2) in adopt the method for dry etching to carry out etch processes to described extension transition zone.
6. the growing method of vertical stratification power device epitaxial loayer according to claim 1, is characterized in that: described targeted epitaxial layer is epitaxial layer of gallium nitride.
7. the power device obtained based on the growing method of the arbitrary described vertical stratification power device epitaxial loayer of claim 1 to 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410785079.3A CN104538282A (en) | 2014-12-17 | 2014-12-17 | Growing method of vertical structure power device epitaxial layer and power device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410785079.3A CN104538282A (en) | 2014-12-17 | 2014-12-17 | Growing method of vertical structure power device epitaxial layer and power device |
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| Publication Number | Publication Date |
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| CN104538282A true CN104538282A (en) | 2015-04-22 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410785079.3A Pending CN104538282A (en) | 2014-12-17 | 2014-12-17 | Growing method of vertical structure power device epitaxial layer and power device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106486339A (en) * | 2015-08-26 | 2017-03-08 | 中芯国际集成电路制造(上海)有限公司 | The preparation method of GaN film |
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|---|---|---|---|---|
| US6635901B2 (en) * | 2000-12-15 | 2003-10-21 | Nobuhiko Sawaki | Semiconductor device including an InGaAIN layer |
| US6699760B2 (en) * | 2002-06-25 | 2004-03-02 | Lucent Technologies, Inc. | Method for growing layers of group III-nitride semiconductor having electrically passivated threading defects |
| US20070015345A1 (en) * | 2005-07-13 | 2007-01-18 | Baker Troy J | Lateral growth method for defect reduction of semipolar nitride films |
| CN101197260A (en) * | 2007-12-28 | 2008-06-11 | 上海新傲科技有限公司 | Semiconductor underlay and production method and its application on silicon and extension of insulator |
| CN101714594A (en) * | 2009-08-28 | 2010-05-26 | 杭州士兰明芯科技有限公司 | Method for coarsening surface of epitaxial layer of gallium nitride-based light-emitting diode |
| CN102881570A (en) * | 2012-07-20 | 2013-01-16 | 江苏能华微电子科技发展有限公司 | Method for manufacturing semiconductor material |
| CN103074676A (en) * | 2012-09-13 | 2013-05-01 | 中国电子科技集团公司第四十六研究所 | Edge protection method for achieving growth of semiconductor material having self-peeling function |
| CN103928499A (en) * | 2014-04-22 | 2014-07-16 | 西安神光皓瑞光电科技有限公司 | Buffering-type substrate structure and lateral epitaxial growing method implemented on same |
-
2014
- 2014-12-17 CN CN201410785079.3A patent/CN104538282A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6635901B2 (en) * | 2000-12-15 | 2003-10-21 | Nobuhiko Sawaki | Semiconductor device including an InGaAIN layer |
| US6699760B2 (en) * | 2002-06-25 | 2004-03-02 | Lucent Technologies, Inc. | Method for growing layers of group III-nitride semiconductor having electrically passivated threading defects |
| US20070015345A1 (en) * | 2005-07-13 | 2007-01-18 | Baker Troy J | Lateral growth method for defect reduction of semipolar nitride films |
| CN101197260A (en) * | 2007-12-28 | 2008-06-11 | 上海新傲科技有限公司 | Semiconductor underlay and production method and its application on silicon and extension of insulator |
| CN101714594A (en) * | 2009-08-28 | 2010-05-26 | 杭州士兰明芯科技有限公司 | Method for coarsening surface of epitaxial layer of gallium nitride-based light-emitting diode |
| CN102881570A (en) * | 2012-07-20 | 2013-01-16 | 江苏能华微电子科技发展有限公司 | Method for manufacturing semiconductor material |
| CN103074676A (en) * | 2012-09-13 | 2013-05-01 | 中国电子科技集团公司第四十六研究所 | Edge protection method for achieving growth of semiconductor material having self-peeling function |
| CN103928499A (en) * | 2014-04-22 | 2014-07-16 | 西安神光皓瑞光电科技有限公司 | Buffering-type substrate structure and lateral epitaxial growing method implemented on same |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106486339A (en) * | 2015-08-26 | 2017-03-08 | 中芯国际集成电路制造(上海)有限公司 | The preparation method of GaN film |
| CN106486339B (en) * | 2015-08-26 | 2020-03-13 | 中芯国际集成电路制造(上海)有限公司 | Preparation method of GaN film |
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Application publication date: 20150422 |
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