CN104576513B - Prevent barrier bi-layer and corresponding manufacture method that copper spreads - Google Patents
Prevent barrier bi-layer and corresponding manufacture method that copper spreads Download PDFInfo
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- CN104576513B CN104576513B CN201310520214.7A CN201310520214A CN104576513B CN 104576513 B CN104576513 B CN 104576513B CN 201310520214 A CN201310520214 A CN 201310520214A CN 104576513 B CN104576513 B CN 104576513B
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Abstract
What the present invention was provided prevents the barrier bi-layer and corresponding manufacture method of copper diffusion, and the semiconductor base with copper metal layer is placed in the EnCoRe process cavities for the first PVD system that DC is 20 40KW, Ar plasma bombardments and produces Ta active atomics；AC bias, the air pressure of semiconductor-based bottom back side are respectively N in 100 900W, 4000 8000mT, mixed gas2Molar percentage be 2% 4%, to form the Ta of the close heap phase structure of hexagonal on copper metal layer2N thin film layer；By N in mixed gas2Molar percentage be changed into 5% 6%, with the Ta of the close heap phase structure of hexagonal2The α phase TaN film layers of body-centered cubic structure are formed on N thin film layer；Use H2Plasma has Ta to moving into the second PVD system2The semiconductor base processing of N/ α phase TaN film layers；With the target of the PVD system of Ar plasma bombardments second, Al layers are formed in the α phase TaN film layers of the top formed on copper metal layer, the barrier layer for having good barrier effect used for deep submicron integrated circuit Cu interconnection is prepared.
Description
Technical field
The invention belongs to technical field of integrated circuits, more particularly to a kind of barrier bi-layer for preventing copper from spreading and corresponding
Manufacture method.
Background technology
With the development of integrated circuit technology, Cu has progressively substituted Al turns into the interconnection material of a new generation.But, copper more holds
Easily diffuse into the material of surrounding, and the electronic device characteristics of adjacent layer can be changed, cause performance degradation and the failure of component.
Accordingly, it would be desirable to the diffusion for forming a diffusion impervious layer between adjacent layer and copper metal layer to prevent or hinder copper atom, this diffusion
Barrier layer requires effectively prevent the diffusion of copper under certain hot conditions, and is respectively provided with good glue with copper and adjacent layer
Attached property and less contact resistance.
Current industrial quarters deposits TaN films as barrier layer frequently with traditional physical vapour deposition (PVD) (PVD) system, and this is
Because TaN films possess preferably barrier effect, resistance of the barrier layer to copper atom can be improved by increasing the thickness of TaN films
Hinder effect.For example, copper metal layer, barrier layer and Al pads (PAD) are sequentially formed with MEMS (MEMS) from the bottom to top
(be used to play lead and outside is attached), Fig. 1 is referred to, shown in Fig. 1 is traditional PVD system with copper metal layer
The cavity body structure schematic diagram on barrier layer is formed on semiconductor base 10, the thickness of barrier layer (not shown) now isLeft and right, however, MEMS passes through after prolonged thermal anneal process, researcher has found copper atom in thermal anneal process
Barrier layer can be penetrated under effect and is separated out in Al cushion regions, because traditional PVD system only applies backwash work(
Rate (DC), causes the sedimentation rate on barrier layer formed on copper metal layer quickly, the barrier layer of formation is not fine and close.
Lasting diminution, integrated level continuous improvement with integrated circuit feature size, barrier layer has increasingly becomed device
The part of part in itself.When the characteristic size of integrated circuit is less than 45nm, the resistivity of barrier layer in itself has also turned into more next
A more important parameter, this requires the performance requirements such as thickness, the blocking effect to barrier film further to improve, currently
Main PVD deposition technology is it cannot be guaranteed that the TaN barrier layer prepared is still with good diffusion barrier performance, therefore such as
What prepare a barrier layer with good barrier effect used for deep submicron integrated circuit Cu interconnection, this exactly the present invention task
Place.
The content of the invention
It is an object of the invention to provide a kind of barrier bi-layer for preventing copper from spreading and corresponding manufacture method, so as to energy
Prepare a barrier layer with good barrier effect used for deep submicron integrated circuit Cu interconnection.
In order to solve the above problems, the present invention provides a kind of manufacture method for the barrier bi-layer for preventing copper from spreading, including
Following steps：
Step 1：Semiconductor substrate is provided, the front of the semiconductor base has copper metal layer；
Step 2：The semiconductor base is placed in the EnCoRe process cavities of the first PVD system, the EnCoRe techniques
The backwash power of chamber is 20-40KW, and sputtering atmosphere is the target of the EnCoRe process cavities of Ar plasma bombardment, produces Ta and lives
Property atom；
Step 3：The AC bias and air pressure for being applied to the semiconductor-based bottom back side are respectively 100-900W, 4000mT-
8000mT, work atmosphere is N2N in the mixed gas formed with the plasma of the Ar, its mixed gas2Molar percentage
For 2%-4%, sedimentation time is 10~50s, and the Ta of the close heap phase structure of hexagonal is formed on the surface of the copper metal layer2N thin film
Layer；
Step 4：The technological parameter of step 3 is not changed, by N in mixed gas2Molar percentage be changed into 5%-6%,
The Ta of the close heap phase structure of hexagonal2The α phase TaN film layers of body-centered cubic structure are formed on the surface of N thin film layer；
Step 5：Ta will be formed with2The semiconductor base of N/ α phase TaN film layers is moved into the second PVD system, uses H2Etc.
Gas ions are to the Ta that is formed on the copper metal layer2N/ α phase TaN film layers are handled；
Step 6：With the target of the second PVD system described in Ar plasma bombardment, formed on the copper metal layer
The top α phase TaN film layers on formed Al layers.
Further, also include after step 4, before step 5：Repeat step 3 and step 4, in the copper metal layer
On sequentially form Ta2N thin film layer and α phase TaN film layer alternate combinations structures.
Further, each Ta2N thin film layer thickness beThe α phases of each body-centered cubic structure
The thickness of TaN film layers is
Further, the EnCoRe process cavities of first PVD system cover for the enhancing of AMAT ENDURA PVD systems
The sputtering technology chamber again of ability.
Further, second PVD system is traditional PVD system.
Further, in steps of 5, H is used2The technological parameter of corona treatment be：Work atmosphere is He, its H2With
The total flow of He mixed gas is 50100sccm, and processing time is 20-40s.
Further, in step 6, the backwash power of second PVD system is 9000-13000W, Ar plasma
The flow of body is 20-50sccm, and the thickness of the Al layers of formation is
The present invention also provides a kind of barrier bi-layer for preventing copper from spreading to reach another object, including：
Semiconductor substrate, the front of the semiconductor base has copper metal layer；
The Ta of the close heap phase structure of hexagonal2N thin film layer, on the surface of the copper metal layer；
The α phase TaN film layers of body-centered cubic structure, positioned at the Ta of the close heap phase structure of the hexagonal2On N thin film layer；
One Al layers, in the α phases TaN film layers of the top formed on the copper metal layer.
Further, the described barrier bi-layer for preventing copper diffusion also includes：The Ta of the close heap phase structure of hexagonal2N
The α phase TaN film layers of film layer and body-centered cubic structure are alternate combinations structure successively.
Further, each Ta2N thin film layer thickness beThe α phases of each body-centered cubic structure
The thickness of TaN film layers is
Compared with prior art, the manufacture method of the barrier bi-layer disclosed by the invention for preventing copper from spreading, including as follows
Step：Step 1：Semiconductor substrate is provided, the front of the semiconductor base has copper metal layer；Step 2：Partly led described
Body substrate is placed in the EnCoRe process cavities of the first PVD system, and the backwash power of the EnCoRe process cavities is 20-40KW, is splashed
Atmosphere of emanating is the target of the EnCoRe process cavities of Ar plasma bombardment, produces Ta active atomics；Step 3：It is applied to described
The AC bias and air pressure of semiconductor-based bottom back side are respectively 100-900W, 4000mT-8000mT, and work atmosphere is N2With it is described
N in the mixed gas of Ar plasma formation, its mixed gas2Molar percentage be 2%-4%, sedimentation time be 10~
50s, the Ta of the close heap phase structure of hexagonal is formed on the surface of the copper metal layer2N thin film layer；Step 4：The work of step 3 is not changed
Skill parameter, by N in mixed gas2Molar percentage be changed into 5%-6%, in the Ta of the close heap phase structure of the hexagonal2N thin film layer
Surface on formed body-centered cubic structure α phase TaN film layers；Step 5：Ta will be formed with2N/ α phase TaN film layers are partly led
Body substrate is moved into the second PVD system, uses H2Plasma to the Ta that is formed on the copper metal layer2N/ α phase TaN film layers
Handled；Step 6：With the target of the second PVD system described in Ar plasma bombardment, formed on the copper metal layer
The top α phase TaN film layers on formed Al layers, due to can also apply exchange in the EnCoRe process cavities of the first PVD system
Bias, by controlling the N in mixed gas2Molar percentage, compactness can be sequentially formed on copper metal layer more preferable
The Ta of the close heap phase structure of hexagonal2The double barrier of the α phase TaN film layers of N thin film layer and body-centered cubic structure, is solved traditional
Film deposition rate caused by backwash power is fast, the unsound shortcoming of film due to that can only apply for PVD system.
In addition, manufacture method disclosed by the invention also carries out oxidation to the double barrier structure obtained on copper metal layer
Remove, afterwards, the depositing Al layer on double barrier solves the Al pads in traditional MEMS with stopping interlayer due to oxide
In the presence of and cause caducous problem.
In addition, also including in manufacture method disclosed by the invention, repeat step 3 and step after step 4, before step 5
Rapid 4, the Ta of the close heap phase structure of hexagonal is sequentially formed on the copper metal layer2The α phases TaN of N thin film layer and body-centered cubic structure
Film layer alternate combinations structure, therefore, being covered in periodicity double barrier on copper metal layer can more preferable copper diffusion barrier
Into Al layers of phenomenon.
Brief description of the drawings
Fig. 1 shows for the cavity body structure that traditional PVD system forms barrier layer on the semiconductor base with copper metal layer
It is intended to；
Fig. 2 be the embodiment of the present invention in prevent copper spread barrier bi-layer manufacture method schematic flow sheet；
Fig. 3 a to Fig. 3 c tie for the side of the manufacture method of the barrier bi-layer for preventing copper diffusion in the embodiment of the present invention
Structure schematic diagram；
Fig. 4 is put into the EnCoRe of the first PVD system for the semiconductor base with copper metal layer in the embodiment of the present invention
Structural representation in process cavity.
Embodiment
In order to facilitate the understanding of the purposes, features and advantages of the present invention, below in conjunction with the accompanying drawings to the present invention
Embodiment be described in detail.
Many details are elaborated in the following description to fully understand the present invention.But the present invention can be with
Much it is different from other manner described here to implement, those skilled in the art can be in the situation without prejudice to intension of the present invention
Under do similar popularization, therefore the present invention is not limited to the specific embodiments disclosed below.
Fig. 3 c show the cross section structure schematic diagram for the barrier bi-layer for preventing copper from spreading in the preferred embodiment of the present invention.Such as
Shown in Fig. 3 c, the barrier bi-layer for preventing that copper from spreading includes：Semiconductor substrate 100, the semiconductor base 100 is just
Face has copper metal layer；The Ta of the close heap phase structure of hexagonal2N thin film layer 102, the Ta of the close heap phase structure of hexagonal2N thin film layer 102
On the surface of the copper metal layer；The α phase TaN film layers 104 of body-centered cubic structure, the α phases of the body-centered cubic structure
TaN film layers 104 are located at the Ta of the close heap phase structure of the hexagonal2On N thin film layer 102；One Al layers 106, the Al layers 106 are located at
In the α phase TaN film layers 104 of the body-centered cubic structure.
Further, the Ta of the close heap phase structure of hexagonal included by the barrier bi-layer for preventing copper from spreading2N thin film layer
102 and the α phase TaN film layers 104 of body-centered cubic structure be alternate combinations structure successively.
By taking the manufacturing process shown in Fig. 2 as an example, with reference to Fig. 3 a to Fig. 3 c and Fig. 4, one kind that the present invention is provided is prevented
The manufacture method of the barrier bi-layer of copper diffusion is described in detail.
In step sl, referring to Fig. 3 a there is provided semiconductor substrate 100, the front of the semiconductor base 100 has copper
Metal level.
In step s 2, referring to Fig. 4, the semiconductor base 100 is placed in the enhancing covering power of the first PVD system
Again (Enhanced step Coverage Re-sputter, EnCoRe) in sputtering technology chamber, the EnCoRe techniques are applied to
The backwash power DC of chamber is 20-40KW (being preferably 20KW), and sputtering atmosphere is Ar plasma bombardment EnCoRe process cavities
Target, produces Ta (tantalum) active atomic.Wherein, the EnCoRe process cavities of first PVD system are AMAT ENDURA PVD systems
The EnCoRe process cavities of system.
In step s3, referring to Fig. 4 and Fig. 3 a, the backwash power DC of EnCoRe process cavities size is kept, is applied
It is 100-900W (being preferably 230W) in the AC bias AC Bias of the semiconductor-based bottom back side, is applied to the semiconductor
The air pressure of backside of substrate is 4000-8000mT (being preferably 4000mT), and work atmosphere is N2Formed with the plasma of the Ar
Mixed gas, N in its mixed gas2Molar percentage be 2%-4%, sedimentation time is 10-50s (be preferably 33s), from
And the N of the Ta active atomics and the low discharge in mixed gas2Plasma with reference to and the surface of copper metal layer 101
Forming thickness is(it is preferably) the close heap phase structure (hcp) of hexagonal Ta2N thin film layer 102.Now obtain
The Ta of the close heap phase structure of the hexagonal obtained2N thin film layer 102 has low-resistance feature.
In step s 4, referring to Fig. 4 and Fig. 3 a, the technological parameter of step 3 is not changed, by N in mixed gas2Mole of gas
Percentage is changed into 5%-6% from low discharge, so that the N of the Ta active atomics and the high flow capacity in mixed gas2Plasma
Body with reference to and the close heap phase structure of hexagonal Ta2Forming thickness on the surface of N thin film layer 102 is(preferably
For) body-centered cubic structure (bcc) α phase TaN film layers 104.
Due to can not only apply backwash power DC in the EnCoRe process cavities of the first PVD system, it can also apply exchange inclined
AC Bias are pressed, and by controlling the N in mixed gas2Molar percentage size, can on copper metal layer shape successively
Into the Ta of the close heap phase structure of the more preferable hexagonal of compactness2Double stops of the α phase TaN film layers of N thin film layer and body-centered cubic structure
Layer, the thickness of this double barrier is not only thin, and its resistance is also low, solves traditional PVD system anti-due to that can only apply
Splash that film deposition rate caused by power is fast, the unsound shortcoming of film, and improve traditional diffusion impervious layer can
By property.
In order to further hinder the diffusion of copper metal layer, the reliability of device, after step 4, the He of repeat step 3 are improved
Step 4, then the Ta of the close heap phase structure of hexagonal is sequentially formed on the copper metal layer 1012N thin film layer and body-centered cubic structure
α phase TaN film layer alternate combinations structures.The periodicity of the alternate combinations structure by the close heap phase structure of the hexagonal Ta2N is thin
The thickness of the double barrier of the α phase TaN film layers formation of film layer and body-centered cubic structure determines that usual periodicity is 2-6, at this
In the most preferred embodiment of invention, with the Ta of the close heap phase structure of hexagonal2N thin film layer thickness beThe α of body-centered cubic structure
The thickness of phase TaN film layers isPeriodicity illustrates for 2.
In step s 5, referring to Fig. 3 b, first, the Ta of the close heap phase structure of hexagonal will be formed with2The α of N/ body-centered cubic structures
The semiconductor base of phase TaN film layers is moved into the second PVD system, wherein, second PVD system is inclined without applying exchange
Press AC Bias traditional PVD system.
Due to the α phase TaN film layers positioned at the uppermost body-centered cubic structure of the copper metal layer surface and and its
Under the close heap phase structure of hexagonal Ta2There is oxidative phenomena in the interface of N thin film layer, so using H2Plasma to the copper
The Ta of the close heap phase structure of hexagonal formed on metal level2The α phase TaN film layers of N/ body-centered cubic structures are handled, and go deoxygenation
Compound.
Wherein, H is used2The technological parameter of corona treatment be：Work atmosphere is He, its H2With He mixed gas
Total flow is 50-100sccm, and processing time is 20-40s, in highly preferred embodiment of the present invention, and backwash power is 9200W, its
H2Total flow with He mixed gas is 80sccm, and processing time is 30s.
In step s 6, referring to Fig. 3 c, with the target of the second PVD system described in Ar plasma bombardment, in the copper
Thickness is formed in the α phase TaN film layers of the body-centered cubic structure of the top formed on metal level isIt is (excellent
Elect as) Al layers 106.
Wherein, the parameter process of second PVD system is：Backwash power DC is that 9000-13000W (is preferably
9200W), the flow of the plasma of the Ar is 20-50sccm (being preferably 35sccm).
After step S6, said structure is subjected to thermal anneal process, the copper metal layer is close due to the hexagonal thereon
The Ta of heap phase structure2The effect of the double barrier of the α phase TaN film layers of N/ body-centered cubic structures, it is difficult to diffuse to Al layers 106.
Further, since remove oxide in step S5, so, in the Ta of the close heap phase structure of the hexagonal2N/ body-centered cubic structures
α phase TaN film layers double barrier on depositing Al layer reliability it is higher, solve in traditional MEMS Al pad with stop
Interlayer causes caducous problem due to the presence of oxide.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.Any
Art personnel can be modified above-described embodiment and changed under the spirit and scope without prejudice to the present invention.Therefore,
The scope of the present invention, should be as listed by claims.
Claims (10)
1. a kind of manufacture method for the barrier bi-layer for preventing copper from spreading, it is characterised in that comprise the following steps：
Step 1：Semiconductor substrate is provided, the front of the semiconductor base has copper metal layer；
Step 2：The semiconductor base is placed in the EnCoRe process cavities of the first PVD system, the EnCoRe process cavities
Backwash power is 20-40KW, and sputtering atmosphere is the target of the EnCoRe process cavities of Ar plasma bombardment, produces Ta activity former
Son；
Step 3：The AC bias and air pressure for being applied to the semiconductor-based bottom back side are respectively 100-900W, 4000mT-
8000mT, work atmosphere is N2N in the mixed gas formed with the plasma of the Ar, its mixed gas2Molar percentage
For 2%-4%, sedimentation time is 10~55s, and the Ta of the close heap phase structure of hexagonal is formed on the surface of the copper metal layer2N thin film layer；
Step 4：The technological parameter of step 3 is not changed, by N in mixed gas2Molar percentage be changed into 5%-6%, in the hexagonal
The Ta of close heap phase structure2The α phase TaN film layers of body-centered cubic structure are formed on the surface of N thin film layer；
Step 5：Ta will be formed with2The semiconductor base of N/ α phase TaN film layers is moved into the second PVD system, uses H2Plasma
Body is to the Ta that is formed on the copper metal layer2N/ α phase TaN film layers are handled；
Step 6：With the target of the second PVD system described in Ar plasma bombardment, formed most on the copper metal layer
Al layers are formed in the α phase TaN film layers of top.
2. manufacture method as claimed in claim 1, it is characterised in that also include after step 4, before step 5：Repeat to walk
Rapid 3 and step 4, sequentially form Ta on the copper metal layer2N thin film layer and α phase TaN film layer alternate combinations structures.
3. manufacture method as claimed in claim 2, it is characterised in that each Ta2N thin film layer thickness beThe thickness of the α phase TaN film layers of each body-centered cubic structure is
4. manufacture method as claimed in claim 1, it is characterised in that the EnCoRe process cavities of first PVD system are
The sputtering technology chamber again of the enhancing covering power of AMAT ENDURA PVD systems.
5. manufacture method as claimed in claim 1, it is characterised in that second PVD system is traditional PVD system.
6. manufacture method as claimed in claim 1, it is characterised in that in steps of 5, uses H2Corona treatment technique
Parameter is：Work atmosphere is He, its H2Total flow with He mixed gas is 50-100sccm, and processing time is 20-40s.
7. manufacture method as claimed in claim 1, it is characterised in that in step 6, the backwash work(of second PVD system
Rate is 9000-13000W, and the flow of Ar plasma is 20-50sccm, and the thickness of the Al layers of formation is
8. a kind of manufacture method of the barrier bi-layer for preventing copper diffusion in utilization claim 1,4 to 7 described in any one
Prepared prevents the barrier bi-layer of copper diffusion, it is characterised in that including：
Semiconductor substrate, the front of the semiconductor base has copper metal layer；
The Ta of the close heap phase structure of hexagonal2N thin film layer, on the surface of the copper metal layer；
The α phase TaN film layers of body-centered cubic structure, positioned at the Ta of the close heap phase structure of the hexagonal2On N thin film layer；
One Al layers, in the α phases TaN film layers of the top formed on the copper metal layer.
9. the barrier bi-layer as claimed in claim 8 for preventing copper from spreading, it is characterised in that also include：The hexagonal Mi Dui
The Ta of phase structure2The α phase TaN film layers of N thin film layer and body-centered cubic structure are alternate combinations structure successively.
10. the barrier bi-layer as claimed in claim 9 for preventing copper from spreading, it is characterised in that each Ta2N thin film layer
Thickness isThe thickness of the α phase TaN film layers of each body-centered cubic structure is
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| CN108666261A (en) * | 2017-03-29 | 2018-10-16 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
| CN110112096A (en) * | 2019-05-17 | 2019-08-09 | 长江存储科技有限责任公司 | Metal interconnection structure and forming method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6140231A (en) * | 1999-02-12 | 2000-10-31 | Taiwan Semiconductor Manufacturing Company | Robust diffusion barrier for Cu metallization |
| US6291885B1 (en) * | 1995-06-30 | 2001-09-18 | International Business Machines Corporation | Thin metal barrier for electrical interconnections |
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| US20030155655A1 (en) * | 2002-02-20 | 2003-08-21 | International Business Machines Corporation | Integrated, active, moisture and oxygen getter layers |
| US7449409B2 (en) * | 2005-03-14 | 2008-11-11 | Infineon Technologies Ag | Barrier layer for conductive features |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6291885B1 (en) * | 1995-06-30 | 2001-09-18 | International Business Machines Corporation | Thin metal barrier for electrical interconnections |
| US6140231A (en) * | 1999-02-12 | 2000-10-31 | Taiwan Semiconductor Manufacturing Company | Robust diffusion barrier for Cu metallization |
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