CN104947087A - Over-atmospheric-pressure chemical vapor deposition device - Google Patents
Over-atmospheric-pressure chemical vapor deposition device Download PDFInfo
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- CN104947087A CN104947087A CN201410122524.8A CN201410122524A CN104947087A CN 104947087 A CN104947087 A CN 104947087A CN 201410122524 A CN201410122524 A CN 201410122524A CN 104947087 A CN104947087 A CN 104947087A
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- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 title abstract 3
- 238000006243 chemical reaction Methods 0.000 claims abstract description 47
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 20
- 239000000376 reactant Substances 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 18
- 239000011521 glass Substances 0.000 claims description 16
- 239000012159 carrier gas Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 230000003750 conditioning effect Effects 0.000 claims description 3
- 239000002826 coolant Substances 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000013461 design Methods 0.000 abstract description 7
- 230000001681 protective effect Effects 0.000 abstract description 2
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000012010 growth Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000010408 sweeping Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Abstract
The invention discloses an over-atmospheric-pressure chemical vapor deposition device which mainly comprises a shell, a pressure maintaining chamber, a reaction chamber shell and a reaction chamber. By arranging the double-chamber structure composed of the pressure maintaining chamber and reaction chamber, the reaction chamber can be in the negative pressure state relative to the pressure maintaining chamber through the pressure adjustment and setting, so that the reaction chamber becomes a vacuum chamber relative to the pressure maintaining chamber, thereby maintaining the vacuum seal design of the existing vapor deposition device reaction chamber. The chemical vapor deposition device mainly performs pressure vessel design on the pressure maintaining chamber and pressure maintaining shell, thereby greatly simplifying the design of the over-atmospheric-pressure chemical vapor deposition device. Besides, the arrangement of the pressure shell and pressure maintaining chamber adds a protective measure to the reaction chamber to some degree. The gas in the pressure maintaining chamber can use safer gas relative to the reactant gas, thereby enhancing the equipment safety performance.
Description
Technical field
The present invention relates to semiconductor material and manufacture field, especially relate to a kind of extraordinary pressure chemical vapor deposition device.
Background technology
Chemical vapor deposition (CVD) technology integrates precision optical machinery, semiconductor material, vacuum electronic, hydromeehanics, optics, chemistry, computer are multidisciplinary, is a kind of level of automation is high, expensive, Integration ofTechnology degree is high advanced semiconductor material, opto-electronic device manufactures specific equipment.Chemical vapor depsotition equipment is as the epitaxially grown Perfected process of compound semiconductor materials; there is the features such as quality is high, good stability, reproducible, technique flexible, energy mass-producing volume production; become the key core equipment that industry produces semiconductor photoelectric device and microwave device, had broad application prospects and industrialization value.
Group iii nitride semiconductor material (as AlN, GaN, InN) is due to the excellent photoelectric properties such as its broad spectrum is adjustable, multi-functional, and widespread use on semiconductor device, based on (Ga
1-y-xal
yin
x) device architecture of N heterojunction structure and associated alloys is for the manufacture of efficient, single chip integrated energy conversion system (as tied lamination solar cell, laser apparatus (LDs) and LED for illumination (LEDs)) and the high speed optoelectronic device etc. for opticfiber communication more.At present, III-nitride primarily of lower temperature deposition technology as molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition equipment (MOCVD) manufacture, but in low pressure deposition process, between reactive gas species, the pressure reduction of dividing potential drop is little, under non-equilibrium reaction processing condition, decomposition course can be reversed, the group III nitride material chemical instability of being correlated with due to growth InN and rich In and lower decomposition temperature, cause these Material growths also to have challenge in low pressure deposition process.There are experiment and theoretical evidence to prove the In content that can improve under high pressure (extraordinary pressure) processing condition in the relevant group III nitride material of InN and rich In, and then improve related device as the performance of LEDs and LDs.
The research of current people to extraordinary pressure chemical vapor deposition (Superatmospheric Chemical Vapor Deposition) device is less, and its manufacture difficulty is comparatively large, how designs and a kind ofly manufacture simple, that reliability is high extraordinary pressure chemical vapor deposition device raising group iii nitride semiconductor performance, research type material are had great importance.
Summary of the invention
For solving the problem, the present invention proposes a kind of extraordinary pressure chemical vapor deposition device, mainly comprises: pressurize shell, pressurize cavity, gas introduction part, reaction cavity, reaction cavity shell, slide glass dish, substrate, the support of slide glass dish, heater block, heater block support, base, offgas outlet, external interface.Described pressurize cavity, between pressurize shell and reaction cavity shell, arranges the operating pressure of operating pressure higher than reaction cavity in reaction cavity shell of pressurize cavity, with " vacuum " state that to ensure reaction cavity be negative pressure relative to pressurize cavity; Gas introduction part is used for reactant gases and carrier gas thereof, sweeping gas to import reaction cavity; Slide glass dish is positioned at described reaction cavity, is supported and provides support, described slide glass dish can load single or two or more substrate by slide glass dish; Heater block is positioned at below described slide glass dish, for heating slide glass dish, making above-mentioned physical-chemical reaction carry out smoothly under temperature required condition, being supported provide support by heater block; Offgas outlet is arranged on the discharge for reaction end gas bottom reaction cavity; Pressurize shell or base arrange more than the external interface for input and output such as water coolant, detection or conditioning signal, electricity, reactant gases and carrier gas thereof as required, when described external interface uses, the stopping property that pressurize cavity is good must be ensured.
Optionally, pressurize shell arranges view port, convenient situation of observing in pressurize cavity.
The present invention adopts the dual chamber structure arranging pressurize cavity and reaction cavity, can be regulated by pressure makes the relative pressurize cavity of reaction cavity be in negative pressure state with setting, even if reaction cavity becomes vacuum cavity relative to pressurize cavity, the vacuum-sealing design of existing gaseous phase deposition device reaction cavity body can be retained like this, mainly design of pressure vessels is carried out to pressurize cavity and pressurize shell, the extraordinary chemical vapor deposition apparatus design of very big simplification, the setting of pressure shell and pressurize cavity also protective barrier together with to a certain degree adding to reaction cavity in addition, and the gas that the gas in pressurize cavity can use relative response gas safer, improve device security performance.
Accompanying drawing explanation
Fig. 1 is extraordinary pressure chemical vapor deposition device schematic diagram of the present invention.
Fig. 2 is the schematic diagram increasing view port on Fig. 1 basis.
Embodiment
Further illustrate embodiments of the invention below in conjunction with accompanying drawing, Fig. 1 is the schematic cross sectional views of the extraordinary pressure chemical vapor deposition device according to an embodiment of the invention.Should understand, Fig. 1 emphasis disclosed by the invention illustrates the component of the extraordinary pressure chemical vapor deposition device according to one embodiment of the present invention, that is, these accompanying drawings are not intended to illustrate each the independent component in extraordinary pressure chemical vapor deposition device.
As shown in Figure 1, the extraordinary pressure chemical vapor deposition device of the present invention mainly comprises: pressurize shell 1, pressurize cavity 2, gas introduction part 3, reaction cavity 4, reaction cavity shell 5, slide glass dish 6, substrate 7, slide glass dish support 8, heater block 9, heater block support 10, base 11, offgas outlet 12, external interface 13.Described pressurize cavity 2 is between pressurize shell 1 and reaction cavity shell 5, the operating pressure of operating pressure higher than reaction cavity 4 in reaction cavity shell 5 of pressurize cavity 2 is set, with " vacuum " state that to ensure reaction cavity 4 be negative pressure relative to pressurize cavity 2; Gas introduction part 3 is for importing reaction cavity 4 by reactant gases and carrier gas thereof, sweeping gas; Slide glass dish 6 is positioned at described reaction cavity 4, supports 8 and provides support, described slide glass dish 6 can load single or two or more substrate 7 by slide glass dish; Heater block 9 is positioned at below described slide glass dish 6, for heating slide glass dish 6, making above-mentioned physical-chemical reaction carry out smoothly under temperature required condition, supporting 10 provide support by heater block; Offgas outlet 12 is arranged on the discharge for reaction end gas bottom reaction cavity 4; Pressurize shell 1 or base 11 arrange more than the external interface 13 for input and output such as water coolant, detection or conditioning signal, electricity, reactant gases and carrier gas thereof as required, when described external interface 13 uses, the stopping property that pressurize cavity 2 is good must be ensured.
In device working process, when the operating pressure of the reaction cavity 4 of extraordinary pressure chemical vapor deposition device is more than normal atmosphere (normal pressure), the operating pressure arranging pressurize cavity 2 pressure and reaction cavity 4 keeps certain positive pressure difference, or arrange certain pressurize cavity 2 pressure, this pressure is greater than the operating pressure maximum value of reaction cavity 4.Like this, regulated by pressure and make the relative pressurize cavity 2 of reaction cavity 4 be in negative pressure state, even if reaction cavity 4 becomes vacuum cavity relative to pressurize cavity 2 with setting.
Fig. 2 is the setting adding view port 14 on the basis of Fig. 1, convenient situation of observing in pressurize cavity 2.
More than illustrate just illustrative for the purpose of the present invention; and it is nonrestrictive; the understanding of those of ordinary skill in the art; when not departing from the spirit and scope that claim limits; change can be made according to above-mentioned disclosure, modify or equivalence, but all will fall within the scope of protection of the present invention.
Claims (3)
1. an extraordinary pressure chemical vapor deposition device, mainly comprise: pressurize shell (1), pressurize cavity (2), gas introduction part (3), reaction cavity (4), reaction cavity shell (5), slide glass dish (6), substrate (7), slide glass dish supports (8), heater block (9), heater block supports (10), base (11), offgas outlet (12), external interface (13), it is characterized in that described pressurize cavity (2) is positioned between pressurize shell (1) and reaction cavity shell (5), the operating pressure of operating pressure higher than reaction cavity shell (5) interior reaction cavity (4) of pressurize cavity (2) is set, to ensure reaction cavity (4) relative to pressurize cavity (2) for negative pressure state.
2. extraordinary pressure chemical vapor deposition device according to claim 1, it is characterized in that described pressurize shell (1) or base (11) arrange more than one external interface (13) for input and output such as water coolant, detection or conditioning signal, electricity, reactant gases and carrier gas thereof as required, when described external interface (13) uses, the stopping property that pressurize cavity (2) is good must be ensured.
3. extraordinary pressure chemical vapor deposition device according to claim 1 and 2, is characterized in that described pressurize shell (1) is provided with view port (14).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410122524.8A CN104947087B (en) | 2014-03-31 | 2014-03-31 | Extraordinary pressure chemical vapor deposition device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410122524.8A CN104947087B (en) | 2014-03-31 | 2014-03-31 | Extraordinary pressure chemical vapor deposition device |
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| CN104947087A true CN104947087A (en) | 2015-09-30 |
| CN104947087B CN104947087B (en) | 2018-03-06 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107345293A (en) * | 2016-05-06 | 2017-11-14 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5614257A (en) * | 1991-08-09 | 1997-03-25 | Applied Materials, Inc | Low temperature, high pressure silicon deposition method |
| CN102021530A (en) * | 2009-09-11 | 2011-04-20 | 甘志银 | Reaction chamber of multiple-gas coupling metal metallorganic chemical vapor deposition equipment |
| CN102674359A (en) * | 2012-05-09 | 2012-09-19 | 天津大学 | Device and method for cooing tail gas recovery liquid of polysilicon reduction furnace with inner tank |
| CN203174051U (en) * | 2013-03-22 | 2013-09-04 | 东方电气集团东方锅炉股份有限公司 | Coal water slurry water-cooled wall gasification furnace in waste boiler process |
-
2014
- 2014-03-31 CN CN201410122524.8A patent/CN104947087B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5614257A (en) * | 1991-08-09 | 1997-03-25 | Applied Materials, Inc | Low temperature, high pressure silicon deposition method |
| CN102021530A (en) * | 2009-09-11 | 2011-04-20 | 甘志银 | Reaction chamber of multiple-gas coupling metal metallorganic chemical vapor deposition equipment |
| CN102674359A (en) * | 2012-05-09 | 2012-09-19 | 天津大学 | Device and method for cooing tail gas recovery liquid of polysilicon reduction furnace with inner tank |
| CN203174051U (en) * | 2013-03-22 | 2013-09-04 | 东方电气集团东方锅炉股份有限公司 | Coal water slurry water-cooled wall gasification furnace in waste boiler process |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107345293A (en) * | 2016-05-06 | 2017-11-14 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
| CN107345293B (en) * | 2016-05-06 | 2019-07-05 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
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| Publication number | Publication date |
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| CN104947087B (en) | 2018-03-06 |
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Effective date of registration: 20240124 Address after: 528251, Zone C, 1st Floor, No. 5 Pingzhou Nangang Street, Guicheng Street, Nanhai District, Foshan City, Guangdong Province Patentee after: Guangdong Zhongyuan Semiconductor Technology Co.,Ltd. Country or region after: China Address before: 528251 C, first floor, west of Foshan Road, Nansha Road, Guangdong. Patentee before: Gan Zhiyin Country or region before: China |