CN105070714A - Illumination communication light emitting diode device - Google Patents
Illumination communication light emitting diode device Download PDFInfo
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- CN105070714A CN105070714A CN201510584644.4A CN201510584644A CN105070714A CN 105070714 A CN105070714 A CN 105070714A CN 201510584644 A CN201510584644 A CN 201510584644A CN 105070714 A CN105070714 A CN 105070714A
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- chip core
- loop configuration
- configuration chip
- illumination communication
- layer
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Abstract
The invention discloses an illumination communication light emitting diode device, which comprises a positive electrode, a plurality of annular-structured chip core grains and a negative electrode in sequence, wherein the plurality of annular-structured chip core grains are arranged in a matrix, and each annular-structured chip core grain sequentially comprises a transparent electrode layer, a hole generating p-type layer, an electron hole recombination layer, an electron generating n-type layer and a substrate. The illumination communication light emitting diode device adopts the annular-structured chip core grains so that the electron hole recombination is even, and high recombination rate is achieved, thereby achieving the high-speed and broadband technical effects of the device.
Description
Technical field
The present invention relates to photoelectric device technical field, be specifically related to a kind of illumination communication LED device.
Background technology
Luminescent device is applied to the technology of the communications field studied a period of time, but the promotion and application of this technology receive the frequency restriction of common LED component, corresponding drive and control circuit technology ripe far away, also do not form international standard, be still in the junior stage.The principle of light-emitting diode visible light communication technology utilizes fluorescent material to add blue chip formation white light LEDs to carry out throwing light on and the two kinds of functions that communicate, the electron-hole recombination rate of current white light LEDs is high not enough, frequency band is also narrow, light-emitting area is also large all not enough, limits its application in the communications field.
Summary of the invention
The object of the invention is to address the deficiencies of the prior art, provide a kind of illumination communication LED device, the technical scheme of employing is as follows:
A kind of illumination communication LED device, comprise positive electrode, the loop configuration chip core grain of multiple matrix arrangement and negative electrode successively, described loop configuration chip core grain comprises transparent electrode layer successively, hole produces p-type layer, electron-hole recombinations layer, electronics produce n-layer and substrate.
During work, electronics produces n-layer and provides electronics, and hole produces p-type layer and provides electric charge, and electronics and hole are luminous in electron-hole recombinations layer compound.The present invention adopts loop configuration chip core grain to make electron-hole recombinations even, reaches high recombination rate, thus reaches device high speed and wide band technique effect, adopts chip core grain also to make the light-emitting area of device increase in addition.
As preferably, described illumination communication LED device comprises 20 loop configuration chip core grains, and described 20 loop configuration chip core grains form the matrix that the five-element four arrange.
Loop configuration chip core grain is the elementary cell forming device, and device arranges totally 20 loop configuration chip core grains by 5 row and 4 and forms, and reduces area and the volume of chip core grain, thus improves response device speed.
As preferably, the substrate contact of described negative electrode and loop configuration chip core grain, positive electrode and hole produce p-type layer and contact, and described positive electrode adopts grapheme material manufacture to form.
Substrate adopts semiconductor process techniques, and the manufactures of such as bonding techniques, evaporation coating technique etc. form, and contact with negative electrode and have and better conduct electricity and thermal conductivity, positive electrode and hole produce p-type layer and contact and have good conductivity.Positive electrode adopts grapheme material manufacture, has conduction and heat conductivility preferably, matrix arrangement loop configuration chip core grain is connected according to parallel organization, reduces control voltage, add control electric current.
As preferably, connected by the photoetching of semiconductor technology, evaporation connecting electrode technique between described matrix arrangement loop configuration chip core grain.
Compared with prior art, beneficial effect of the present invention: the present invention adopts loop configuration chip core grain to make electron-hole recombinations even, reach high recombination rate, thus reach device high speed and wide band technique effect, device is made up of multiple loop configuration chip core grain simultaneously, reduces area and the volume of device.The positive electrode manufactured by grapheme material makes matrix arrangement loop configuration chip core grain connect according to parallel organization, reduces control voltage, adds control electric current.
Accompanying drawing explanation
Fig. 1 is the structural representation of the illumination communication LED device of the present embodiment;
Fig. 2 is the loop configuration chip core grain arrangement architecture schematic diagram of the present embodiment;
Fig. 3 is the stereogram of the loop configuration chip core grain of the present embodiment;
Fig. 4 is the structural representation of the loop configuration chip core grain of the present embodiment.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in further detail.
Embodiment:
As shown in Figure 1, Figure 2, Figure 3 and Figure 4, a kind of illumination communication LED device, comprise positive electrode 2, the loop configuration chip core grain 5 of multiple matrix arrangement and negative electrode 3 successively, described loop configuration chip core grain 5 comprises transparent electrode layer 8 successively, hole produces p-type layer 9, electron-hole recombinations layer 10, electronics produce n-layer 11 and substrate 12.
During work, electronics produces n-layer 11 and provides electronics, and hole produces p-type layer 9 and provides electric charge, and electronics and hole are luminous in electron-hole recombinations layer 10 compound.The present embodiment adopts loop configuration chip core grain to make electron-hole recombinations even, reaches high recombination rate, thus reaches device high speed and wide band technique effect.
Described illumination communication LED device comprises 20 loop configuration chip core grains 5, and described 20 loop configuration chip core grains form the matrix that the five-element four arrange.
Loop configuration chip core grain is the elementary cell forming device, and device arranges totally 20 loop configuration chip core grains by 5 row and 4 and forms, and reduces chip core grain sum volume, thus improves response device speed.
The substrate contact of described negative electrode 3 and loop configuration chip core grain 5, positive electrode 2 and hole produce p-type layer 9 and contact, and described positive electrode 2 adopts grapheme material manufacture to form.
Substrate 12 adopts semiconductor process techniques, and the manufactures of such as bonding techniques, evaporation coating technique etc. form, and contact with negative electrode 3 and have and better conduct electricity and thermal conductivity, positive electrode 2 and hole produce p-type layer 9 and contact and have good conductivity.Positive electrode 2 adopts grapheme material manufacture, has conduction and heat conductivility preferably, matrix arrangement loop configuration chip core grain 5 is connected according to parallel organization, reduces control voltage, add control electric current.
Claims (4)
1. an illumination communication LED device, it is characterized in that, comprise positive electrode, the loop configuration chip core grain of multiple matrix arrangement and negative electrode successively, described loop configuration chip core grain comprises transparent electrode layer successively, hole produces p-type layer, electron-hole recombinations layer, electronics produce n-layer and substrate.
2. one illumination communication LED device according to claim 1, is characterized in that, described illumination communication LED device comprises 20 loop configuration chip core grains, and described 20 loop configuration chip core grains form the matrix that the five-element four arrange.
3. one illumination communication LED device according to claim 1, it is characterized in that, the substrate contact of described negative electrode and loop configuration chip core grain, positive electrode and hole produce p-type layer and contact, and described positive electrode adopts grapheme material manufacture to form.
4. one illumination communication LED device according to claim 1, is characterized in that, connect between described matrix arrangement loop configuration chip core grain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510584644.4A CN105070714B (en) | 2015-09-15 | 2015-09-15 | Illumination communication LED device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510584644.4A CN105070714B (en) | 2015-09-15 | 2015-09-15 | Illumination communication LED device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105070714A true CN105070714A (en) | 2015-11-18 |
| CN105070714B CN105070714B (en) | 2018-06-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510584644.4A Active CN105070714B (en) | 2015-09-15 | 2015-09-15 | Illumination communication LED device |
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| CN (1) | CN105070714B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113690348A (en) * | 2021-06-29 | 2021-11-23 | 河源市众拓光电科技有限公司 | LED device for visible light communication |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110177636A1 (en) * | 2010-01-21 | 2011-07-21 | Pan Shaoher X | Manufacturing process for solid state lighting device on a conductive substrate |
| CN102484182A (en) * | 2009-06-08 | 2012-05-30 | 矽光光电科技有限公司 | Integrated circuit light emission device, module and fabrication process |
| US8217418B1 (en) * | 2011-02-14 | 2012-07-10 | Siphoton Inc. | Semi-polar semiconductor light emission devices |
-
2015
- 2015-09-15 CN CN201510584644.4A patent/CN105070714B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102484182A (en) * | 2009-06-08 | 2012-05-30 | 矽光光电科技有限公司 | Integrated circuit light emission device, module and fabrication process |
| US20110177636A1 (en) * | 2010-01-21 | 2011-07-21 | Pan Shaoher X | Manufacturing process for solid state lighting device on a conductive substrate |
| US8217418B1 (en) * | 2011-02-14 | 2012-07-10 | Siphoton Inc. | Semi-polar semiconductor light emission devices |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113690348A (en) * | 2021-06-29 | 2021-11-23 | 河源市众拓光电科技有限公司 | LED device for visible light communication |
| CN113690348B (en) * | 2021-06-29 | 2023-02-24 | 河源市众拓光电科技有限公司 | LED device for visible light communication |
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| CN105070714B (en) | 2018-06-15 |
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