CN105225989A - Plasma etching machine - Google Patents
Plasma etching machine Download PDFInfo
- Publication number
- CN105225989A CN105225989A CN201510657768.0A CN201510657768A CN105225989A CN 105225989 A CN105225989 A CN 105225989A CN 201510657768 A CN201510657768 A CN 201510657768A CN 105225989 A CN105225989 A CN 105225989A
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- Prior art keywords
- hole
- screw
- plasma etching
- etching machine
- seal body
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
Abstract
The invention provides a kind of plasma etching machine, belong to technical field of manufacturing semiconductors.This plasma etching machine comprises reaction chamber, be provided with ion in described reaction chamber and produce electrode, described ion produces above electrode and is provided with carriage to support workpiece to be processed, described carriage offers installing hole, described ion produces the region that electrode correspond to described installing hole and offers screwed hole, described installing hole and described screwed hole are connected by screw, described screw the axial and top being positioned at described screw is provided with sealing unit, described sealing unit is for sealing described installing hole.This plasma etching machine can enter into ion and produces in the screwed hole of electrode by the plasma long-term effectively above barrier support frame, avoids plasma damage ion to produce electrode.
Description
Technical field
The invention belongs to the technical field of semiconductor manufacturing, be specifically related to a kind of plasma etching machine.
Background technology
In existing plasma etching machine, as shown in Figure 1, the carriage 1 of its reaction chamber inside produces electrode 2 with ion and usually adopts mounting screw 3 to be connected.Plasma above installing hole produces electrode 2 by the gap-contact between mounting screw 3 and installing hole inwall to ion and causes ion to produce the damage of electrode 2, in installing hole, be provided with potsherd 4 above mounting screw 3.
Inventor finds that in prior art, at least there are the following problems:
First, when potsherd 4 is in plasma bombardment always, its diameter and the continuous loss of thickness cause plasma easily to enter into installing hole thus damage ion producing electrode 2; Secondly, the energy that etching technics newly developed makes plasma have increases, and the loss rate of potsherd 4 accelerates, and the degree of injury that plasma produces electrode 2 to ion is also more serious; Finally, mounting screw 3 is easily chipping when expanding with heat and contract with cold, thus causes carriage 1 and ion to produce electrode 2 being connected insecure.
Why plasma can damage ion generation electrode 2 is be made up because ion produces electrode 2 of metal material, plasma knows from experience molten metal material, when plasma enter into ion produce electrode 2 screwed hole in time, screwed hole can be destroyed, cause ion to produce electrode 2 insulating properties lost efficacy and cannot use, and cause ion generation electrode 2 paradoxical discharge to cause warning device frequently to be reported to the police.
Summary of the invention
The present invention is directed to existing above-mentioned deficiency, provide a kind of plasma etching machine, the parts that these plasma etching facility have sealing good by installing hole for barrier plasma, and then touch ion and produce electrode pair ion and produce electrode and cause damage.
The technical scheme that solution the technology of the present invention problem adopts is to provide a kind of plasma etching machine, this plasma etching machine comprises reaction chamber, be provided with ion in described reaction chamber and produce electrode, described ion produces above electrode and is provided with carriage to support workpiece to be processed, described carriage offers installing hole, described ion produces the region that electrode correspond to described installing hole and offers screwed hole, described installing hole and described screwed hole are connected by screw, the axis of described screw, and the top being positioned at described screw is provided with sealing unit, described sealing unit is for sealing described installing hole.
Preferably, described installing hole is shoulder hole, described shoulder hole comprises first stage hole and is positioned at the second-order sector hole above described first stage hole, the aperture of described second-order sector hole is greater than the aperture in described first stage hole, the main body of described screw is arranged in described screwed hole and described first stage hole, the head of described screw is positioned at described second-order sector hole, and described sealing unit is positioned at described second-order sector hole and is covered in the top of the head of described screw.
Preferably, described sealing unit comprises seal body and sealing ring, the outer wall of described seal body offers cannelure, the axial direction of described cannelure is consistent with the axial direction of the main body of described screw, described sealing ring is arranged in described cannelure, the external diameter of described sealing ring is greater than the aperture of described second-order sector hole, and the internal diameter of described sealing ring is less than the diameter of described seal body.
Preferably, described seal body is inwardly recessed formation first groove coaxial with described seal body towards the middle body of the end of described screw side, and the head of described screw is coated in described first groove.
Preferably, described seal body adopts at least one material in Teflon material, ceramic material, engineering plastics, resin material, carbon fiber to be formed, and described sealing ring adopts high fluorine material to be formed.
Preferably, described installing hole also comprises the phase III hole be positioned at above described second-order sector hole, the aperture in described phase III hole is greater than the aperture of described second-order sector hole, be provided with the sealed cap coaxial with the main body of described screw in described phase III hole, described sealed cap is positioned at described phase III hole and suitable with described phase III hole.
Preferably, the edge of described sealed cap vertically extends to form protuberance to the side towards described seal body, and to make described sealed cap form the second groove towards the side of described seal body, described seal body is coated in described second groove.
Preferably, described sealed cap adopts ceramic material or plated surface to have the metal material of oxide-film to be formed.
Preferably, described carriage comprises the four pieces of ceramic blocks overlapped end to end, and ceramic block described in every block is provided with two described installing holes.
Preferably, described screw adopts at least one material in zirconia, stainless steel, engineering plastics, carbon fiber to be formed.
Plasma etching machine provided by the invention, sealed cap, sealing unit and screw is disposed with from top to bottom in the installing hole that its carriage is offered, ion can be entered into produce in the screwed hole of electrode by plasma long-term effectively above barrier support frame, avoid plasma damage screwed hole, avoid plasma to make ion produce the insulating properties inefficacy of electrode and the phenomenon of paradoxical discharge simultaneously.Accordingly, these plasma etching facility have longer useful life, and can be adapted to etching technics newly developed, have better market prospects.
Accompanying drawing explanation
Fig. 1 is the structural representation that existing plasma etching machine inner support frame and ion produce Electrode connection part;
Fig. 2 is the structural representation that the plasma etching machine inner support frame of the embodiment of the present invention 1 and ion produce Electrode connection part;
Fig. 3 is the vertical view of the complete structure of carriage in Fig. 2;
Fig. 4 is the structural representation that the plasma etching machine inner support frame of the embodiment of the present invention 2 and ion produce Electrode connection part;
Wherein, Reference numeral is:
1, carriage; 11, ceramic block; 2, ion produces electrode; 3, mounting screw;
4, potsherd; 5, screw; 6, sealing unit; 61, seal body; 62, sealing ring; 7, sealed cap; 8, pad.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
Embodiment 1:
The present embodiment provides a kind of plasma etching machine, and this plasma etching machine comprises sealed cap and sealing unit, can enter into ion and produces in the screwed hole of electrode by the plasma long-term effectively above barrier support frame, avoid plasma damage screwed hole.
As shown in Figure 2, this plasma etching machine comprises reaction chamber, be provided with ion in reaction chamber and produce electrode 2, ion produces above electrode 2 and is provided with carriage 1 to support workpiece to be processed, carriage 1 offers installing hole, ion produces the region that electrode 2 correspond to installing hole and offers screwed hole, installing hole is connected by screw 5 with screwed hole, in the axis of screw 5, and the top being positioned at screw 5 is provided with sealing unit 6, sealing unit 6 is for sealing installing hole, in the axis of screw 5, and the top being positioned at sealing unit 6 is provided with sealed cap 7, sealed cap 7 matches with installing hole for stopping that the plasma of top enters in installing hole.
As shown in Figure 3, carriage 1 comprises the four pieces of ceramic blocks 11 overlapped end to end to concrete structure, and every block ceramic block 11 is provided with two installing holes.As shown in Figure 2, the installing hole that carriage 1 is offered is shoulder hole, the phase III hole comprising first stage hole, be positioned at the second-order sector hole above first stage hole and be positioned at above second-order sector hole, the aperture of second-order sector hole is greater than the aperture in first stage hole, and the aperture in phase III hole is greater than the aperture of second-order sector hole.
The main body of screw 5 is positioned at screwed hole and first stage hole, and the head of screw 5 is positioned at second-order sector hole, thus makes carriage 1 and ion produce electrode 2 to be connected.Be provided with the sealed cap 7 coaxial with screw 5 in phase III hole, sealed cap 7 matches with phase III hole.
In order to ensure the reliability that screw 5 connects, preferred screw 5 and the screwing length of screwed hole are greater than the main diameter of screw 5, and arrange pad 8 in the lower head of screw 5.Have good stability when expanding with heat and contract with cold in order to make screw 5, embrittlement phenomenon can not occur and have performance that is high temperature resistant and insulation, the material of screw 5 preferably adopts the one in the materials such as zirconia, stainless steel, high-strength engineering plastic, carbon fiber.In order to make screw 5 easy to loading and unloading, hexangle type screw in screw 5 preferably adopts.
The sealing unit 6 be positioned at above screw 5 matches with second-order sector hole.Sealing unit 6 comprises seal body 61 and sealing ring 62.Wherein, the outer wall of seal body 61 offers cannelure, and the axial direction of cannelure is consistent with the axial direction of screw 5, and sealing ring 62 is arranged in cannelure.Gap between second-order sector hole and seal body 61 can be sealed preferably to make sealing ring 62, the external diameter of sealing ring 62 is made to be greater than the aperture of second-order sector hole, the internal diameter of sealing ring 62 is less than the diameter of seal body 61, the sealing ring 62 between second-order sector hole inwall and seal body 61 is made to keep certain decrement and be set in cannelure upper and lower vibration not easily occurs like this, effectively can seal the gap between second-order sector hole and seal body 61, prevent the plasma above sealing ring 62 from entering into the screwed hole of below.
The shape in the face of overlooking of cannelure is determined by the shape of seal body 61.Usual seal body 61 is cylindrical shape, and accordingly, the face of overlooking of cannelure is circular, and its cross section can be designed to any one in semicircle, triangle, rectangle.The face of overlooking of sealing ring 62 is also for circular, and its cross sectional shape is corresponding with the cross sectional shape of cannelure, and as shown in Figure 3, the cross sectional shape of cannelure is semicircle, and accordingly, the cross sectional shape of sealing ring 62 is circular.In addition, it is easily understood that when the cross sectional shape of cannelure is rectangle, the cross sectional shape of sealing ring is also rectangle.
Seal body 61 is inwardly recessed formation first groove coaxial with seal body 61 towards the middle body of the end of screw 5 side, and enables the head of the coated screw 5 of the first groove.The head of usual screw 5 is cylindrical, corresponding first groove is round recessed, now, the diameter of the first groove is greater than the diameter of the head of screw 5, the degree of depth of the first round recessed is less than or equal to the thickness of the head of screw 5, seal body 61 can be made like this to cover the head of screw 5, make overall structure compacter.
Preferred seal body 61 adopts the insulating material with resisting plasma corrosion and resistance to elevated temperatures to make, such as Teflon material, ceramic material, engineering plastics, resin material, carbon fiber etc.; Preferred sealing ring 62 adopts high fluorine material or other insulating material to be formed.
The sealed cap 7 be positioned at above sealing unit 6 is positioned at described phase III hole and suitable with phase III hole, and coaxial with the main body of screw 5.The edge of sealed cap 7 vertically extends to form protuberance to the side towards seal body 61, forms the second groove to make sealing cap 7 towards the side of seal body 61.Usually, seal body 61 is cylindrical shape, accordingly, second groove is round recessed, in order to enable the top of the coated seal body 61 of the second groove, the diameter of the second groove is made to be greater than the diameter of seal body 61, the degree of depth of the second round recessed is less than or equal to the thickness of seal body 61, can make sealed cap 7 can coated seal body 61 like this, make overall structure compacter, the more important thing is, compared to the potsherd 4 in Fig. 1, the sealed cap 7 with the second groove more effectively can stop that the plasma of top enters in installing hole.In order to make the upper surface of carriage 1, there is good flatness, make sealed cap 7 have the effect of good barrier plasma simultaneously, the thickness of preferred sealed cap 7 equals the degree of depth in phase III hole, to make the upper surface of sealed cap 7 concordant with the upper surface of carriage 1.
It is easily understood that, the shape of seal body depends on the shape of second-order sector hole, the shape of sealing ring depends on the shape of seal body, the shape of sealed cap depends on the shape in phase III hole, the shape of the first groove depends on the shape of screw head, and the shape of the second groove depends on the shape of seal body.In the present embodiment, be all be designed to circular or cylindrical by above-mentioned shape, but be not limited to circular or cylindrical, also can other shape, such as rectangle or cubic shaped.
In order to the wearing and tearing making sealed cap 7 be subject under the bombardment of plasma are less, sealed cap 7 preferably adopt there is resisting plasma corrosion, the insulating material of resistance to elevated temperatures formed, such as ceramic material, plated surface have the metal material etc. of oxide-film.
Plasma etching machine in the present embodiment, sealed cap, sealing unit and screw is disposed with from top to bottom in the installing hole that its carriage is offered, ion can be entered into produce in the screwed hole of electrode by plasma long-term effectively above barrier support frame, avoid plasma damage screwed hole, avoid plasma to make ion produce the insulating properties inefficacy of electrode and the phenomenon of paradoxical discharge simultaneously.Accordingly, these plasma etching facility have longer useful life, and can be adapted to etching technics newly developed, have better market prospects.
Embodiment 2:
The present embodiment provides a kind of plasma etching machine, and the difference of the plasma etching machine of itself and embodiment 1 is: the plasma etching machine that the present embodiment provides does not have sealed cap structure, is disposed with sealing unit and screw from top to bottom in installing hole.
As shown in Figure 4, the installing hole that carriage 1 is offered is shoulder hole to the concrete structure of the plasma etching machine that the present embodiment provides, and comprise first stage hole and be positioned at the second-order sector hole above first stage hole, the aperture of second-order sector hole is greater than first stage hole.Ion produces the region that electrode 2 correspond to installing hole and offers screwed hole.Installing hole is connected by screw 5 with screwed hole.Accordingly, the main body of screw 5 is positioned at screwed hole and first stage hole, and the head of screw 5 is positioned at second-order sector hole, thus makes carriage 1 and ion produce electrode 2 to be connected.
Screw 5 axial direction and be positioned at above screw 5 and be provided with sealing unit 6, sealing unit 6 comprises seal body 61 and sealing ring 62, and seal body 61 matches with second-order sector hole.The thickness of preferred seal body 61 equals the degree of depth of second-order sector hole, makes the flatness that the upper surface of carriage 1 keeps good.
Other structure of the plasma etching machine of the shape of sealing unit 6 and structure and the present embodiment is identical with structure corresponding in embodiment 1, repeats no more here.
Plasma etching machine in the present embodiment, sealing unit and screw is disposed with from top to bottom in the installing hole that its carriage is offered, ion can be entered into produce in the screwed hole of electrode by plasma long-term effectively above barrier support frame, avoid plasma damage screwed hole, avoid plasma to make ion produce the insulating properties inefficacy of electrode and the phenomenon of paradoxical discharge simultaneously.Accordingly, these plasma etching facility have longer useful life, and can be adapted to etching technics newly developed, have better market prospects.
Be understandable that, the illustrative embodiments that above execution mode is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (10)
1. a plasma etching machine, comprise reaction chamber, be provided with ion in described reaction chamber and produce electrode, described ion produces above electrode and is provided with carriage to support workpiece to be processed, described carriage offers installing hole, described ion produces the region that electrode correspond to described installing hole and offers screwed hole, described installing hole and described screwed hole are connected by screw, it is characterized in that, described screw the axial and top being positioned at described screw is provided with sealing unit, described sealing unit is for sealing described installing hole.
2. plasma etching machine according to claim 1, it is characterized in that, described installing hole is shoulder hole, described shoulder hole comprises first stage hole and is positioned at the second-order sector hole above described first stage hole, the aperture of described second-order sector hole is greater than the aperture in described first stage hole, the main body of described screw is arranged in described screwed hole and described first stage hole, the head of described screw is positioned at described second-order sector hole, and described sealing unit is positioned at described second-order sector hole and is covered in the top of the head of described screw.
3. plasma etching machine according to claim 2, it is characterized in that, described sealing unit comprises seal body and sealing ring, the outer wall of described seal body offers cannelure, the axial direction of described cannelure is consistent with the axial direction of the main body of described screw, described sealing ring is arranged in described cannelure, and the external diameter of described sealing ring is greater than the aperture of described second-order sector hole, and the internal diameter of described sealing ring is less than the diameter of described seal body.
4. plasma etching machine according to claim 3, it is characterized in that, described seal body is inwardly recessed formation first groove coaxial with described seal body towards the middle body of the end of described screw side, and the head of described screw is coated in described first groove.
5. plasma etching machine according to claim 3, is characterized in that, described seal body adopts at least one material in Teflon material, ceramic material, engineering plastics, resin material, carbon fiber to be formed, and described sealing ring adopts high fluorine material to be formed.
6. plasma etching machine according to claim 3, it is characterized in that, described installing hole also comprises the phase III hole be positioned at above described second-order sector hole, the aperture in described phase III hole is greater than the aperture of described second-order sector hole, be provided with the sealed cap coaxial with the main body of described screw in described phase III hole, described sealed cap is positioned at described phase III hole and suitable with described phase III hole.
7. plasma etching machine according to claim 6, it is characterized in that, the edge of described sealed cap vertically extends to form protuberance to the side towards described seal body, to make described sealed cap form the second groove towards the side of described seal body, described seal body is coated in described second groove.
8. plasma etching machine according to claim 6, is characterized in that, described sealed cap adopts ceramic material or plated surface to have the metal material of oxide-film to be formed.
9. the plasma etching machine according to any one of claim 1-8, is characterized in that, described carriage comprises the four pieces of ceramic blocks overlapped end to end, and ceramic block described in every block is provided with two described installing holes.
10. the plasma etching machine according to any one of claim 1-8, is characterized in that, described screw adopts at least one material in zirconia, stainless steel, engineering plastics, carbon fiber to be formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510657768.0A CN105225989B (en) | 2015-10-13 | 2015-10-13 | Plasma etching machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510657768.0A CN105225989B (en) | 2015-10-13 | 2015-10-13 | Plasma etching machine |
Publications (2)
| Publication Number | Publication Date |
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| CN105225989A true CN105225989A (en) | 2016-01-06 |
| CN105225989B CN105225989B (en) | 2018-12-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510657768.0A Active CN105225989B (en) | 2015-10-13 | 2015-10-13 | Plasma etching machine |
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| CN (1) | CN105225989B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106206385A (en) * | 2016-09-27 | 2016-12-07 | 上海华力微电子有限公司 | A kind of chamber in-vivo metal that reduces pollutes etching polysilicon chamber and the method for content |
| CN108470671A (en) * | 2018-05-15 | 2018-08-31 | 梁亚 | A kind of plasma etching machine |
| CN108598189A (en) * | 2018-05-15 | 2018-09-28 | 梁亚 | A kind of preparation method of crystal silicon solar energy battery |
| CN108711546A (en) * | 2018-04-28 | 2018-10-26 | 武汉华星光电技术有限公司 | Lower electrode and dry etcher |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4842683A (en) * | 1986-12-19 | 1989-06-27 | Applied Materials, Inc. | Magnetic field-enhanced plasma etch reactor |
| JP2000091328A (en) * | 1998-08-26 | 2000-03-31 | Samsung Electronics Co Ltd | Plasma-etching device and liquid crystal display device |
| CN104851832A (en) * | 2014-02-18 | 2015-08-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Fixing device, reaction cavity and plasma processing device |
-
2015
- 2015-10-13 CN CN201510657768.0A patent/CN105225989B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4842683A (en) * | 1986-12-19 | 1989-06-27 | Applied Materials, Inc. | Magnetic field-enhanced plasma etch reactor |
| JP2000091328A (en) * | 1998-08-26 | 2000-03-31 | Samsung Electronics Co Ltd | Plasma-etching device and liquid crystal display device |
| CN104851832A (en) * | 2014-02-18 | 2015-08-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Fixing device, reaction cavity and plasma processing device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106206385A (en) * | 2016-09-27 | 2016-12-07 | 上海华力微电子有限公司 | A kind of chamber in-vivo metal that reduces pollutes etching polysilicon chamber and the method for content |
| CN108711546A (en) * | 2018-04-28 | 2018-10-26 | 武汉华星光电技术有限公司 | Lower electrode and dry etcher |
| CN108711546B (en) * | 2018-04-28 | 2019-07-23 | 武汉华星光电技术有限公司 | Lower electrode and dry etcher |
| WO2019205339A1 (en) * | 2018-04-28 | 2019-10-31 | 武汉华星光电技术有限公司 | Lower electrode and dry etching machine |
| CN108470671A (en) * | 2018-05-15 | 2018-08-31 | 梁亚 | A kind of plasma etching machine |
| CN108598189A (en) * | 2018-05-15 | 2018-09-28 | 梁亚 | A kind of preparation method of crystal silicon solar energy battery |
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| Publication number | Publication date |
|---|---|
| CN105225989B (en) | 2018-12-28 |
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