CN105321533A - 由用于能量辅助磁记录的横向电波导驱动的近场换能器 - Google Patents
由用于能量辅助磁记录的横向电波导驱动的近场换能器 Download PDFInfo
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Abstract
本发明涉及由用于能量辅助磁记录的横向电波导驱动的近场换能器。具体地,本发明涉及一种设备,其包括工作在横向电(TE)模式中的介质波导芯、近场换能器(NFT),该介质波导芯被配置为从能量源接收入射光能并将该入射光能引导至目标。该NFT被配置为聚焦从波导芯接收的光能并将聚焦的光能传送到存储盘表面上以生成加热点。该NFT包括由来自波导芯的光能励磁的传播表面等离子体极化激元(PSPP)元件。每个PSPP元件具有在纵向与波导芯对准在单波导芯的表面上面布置的等离子金属条、接收来自波导芯的光能的第一端、以及裸露于空气支承面的第二端。每个金属条的宽度朝向第一端逐渐变窄。
Description
相关申请的交叉引用
本申请要求在2014年6月10日提交的申请号为62/010111的美国专利申请的权益,该申请的全部内容通过整体引用合并于此。
背景技术
高密度存储盘被配置为具有提供存储所需数据稳定性的材料层。当向盘写入时,介质的磁特性需要软化以帮助改变位状态。能量辅助磁记录(EAMR)装置或热辅助磁记录(HAMR)技术提供当在磁存储盘上写入时,聚焦在纳米大小的位区域上以实现磁软化的热度。光波导引导光从激光二极管到近场换能器(NFT)。NFT耦合来自波导(WG)的衍射受限光,随后将超出衍射极限的光场能量向下聚焦到允许EAMR/HAMR写入磁存储盘的高度集中(纳米大小的)近场介质加热点(heatingspot)。NFT的不足对激光二极管的功率分配和EAMR/HAMR系统使用寿命有负面影响。更高的NFT效率允许更低的激光功率需求,减轻EAMR/HAMR系统对激光源的总体光学功率的需求,并且产生更少的EAMR/HAMR磁头的寄生加热功率,从而产生改进的可靠性。
光波导主要可以在下列模式中的任一种模式中工作以驱动NFT。在横向电(TE)模式中,主要的电场分量在波导芯上方的横向方向(即在x轴的端到端(side-to-side))。在横向磁(TM)模式中,并且主要的磁场分量在横向方向(即,在x轴的侧边)时,同时在波导芯上面的主要电场分量具有明显的纵向方向(z轴)分量。使用TM模式波导驱动NFT具有在沿波导的方向易于耦合到在波导芯上面的NFT的强电场的优点。对于使用产生TE模式波的激光二极管的EAMR/HAMR装置来说,需要TE模式到TM模式转换器以激励波导中的TM模式。通过TE波导驱动的有效NFT具有避免TE模式到TM模式转换器的优点,这提供更紧凑和更高效的光输送系统。
附图说明
本发明的各个方面现将借助参考附图的示例在下面的具体实施方式中陈述,所述示例并不是为了限制,其中:
图1示出示例性硬盘驱动器的示意图;
图2示出用布置在两个TE介质波导芯上面的两个局部倾斜等离子金属条形成的NFT的示例性实施例的示意图。
图3示出用布置在两个TE介质波导芯上方的两个完全倾斜等离子金属条形成的NFT的示例性实施例的示意图。
图4示出TE波导芯以及并入散热片和用于写入头的磁杆的NFT的示例性实施例的示意图。
图5示出用于驱动NFT的TE波导芯的示例性实施例的示意图,其中,NFT形成为具有一个倾斜边缘的等离子金属条。
图6示出用于驱动NFT的TE波导芯的示例性实施例的示意图,其中,NFT用具有两个倾斜边缘的等离子金属条形成。
图7示出用于驱动NFT的TE波导芯的示例性实施例的示意图,其中NFT形成为具有布置在偏移该波导芯中心线的波导芯上方的等离子金属条。
图8示出用于驱动NFT的TE波导芯的示例性实施例的示意图,其中,NFT形成为具有以歪斜(askew)构造布置在波导芯上方的等离子金属条。
具体实施方式
下面结合附图阐述的具体实施方式旨在描述各个示例性实施例并不是旨在表示只可以被实践的实施例。具体实施方式包括用于提供各实施例的透彻理解的目的的具体细节。不过,显而易见,本领域的技术人员可以在没有这些具体细节的情况下实践各实施例。在某些实例中,众所周知的结构和部件以框图的形式示出,以避免模糊各实施例的内容。缩写词和其他描述性术语仅为了方便和清晰起见来使用,并非旨在限制各实施例的范围。
在附图中示出的各个示例性实施例可能并非按比例绘制。相反,为了清晰起见,各个特征的尺寸可以被放大或减小。另外,为了清晰起见,某些附图可以被简化。因此,附图可能并非描绘给定设备的所有部件。
各个实施例将参考理想化构造的示意图的附图来描述。因此,由于例如制造技术和/或公差产生的例证形状的变异是可以预期的。因此,在整个公开陈述的各个实施例不应解释为局限于本文示出和描述的元件的特定形状,而是包括例如从制造产生的形状偏差。按照示例的方式,示出或描述为在其边缘具有圆形或曲线特征的元件可以替代为具有直线边缘。因此,在附图中示出的元件实质是示意性的,并且他们的形状并非旨在说明元件的精确形状也并非旨在限制所述实施例的范围。
本文使用的词语“示例性的”意指用作示例、实例或例证。在本文被描述为“示例性的”的任何实施例不一定解释为比其他实施例优选或有利。同样,设备或方法的术语“实施例”不需要所有的实施例包括所述部件、结构、特征、功能、过程、优点、益处或操作模式。
如本文所使用的,后面跟随数值的术语“大约”意指在提供的数值的工程容差内。
在下列具体实施方式中,本发明的各个方面将在波导与用于在磁存储盘上的热辅助磁记录的近场换能器之间的接口的背景下陈述。
图1示出硬盘驱动器111,其包括盘驱动器基座114、至少一个可旋转存储盘113(例如,诸如磁盘、磁光盘)以及用于旋转盘113的附接于基座114的枢轴电机116。枢轴电机116通常包括旋转毂,一个或多个盘113、附接于该毂的磁体以及定子,该一个或多个盘113可以在该旋转毂上被安装并夹紧。至少一个悬浮臂108支持至少一个磁头万向架组件(HGA)112,该HGA112保持具有写入头和读出头的磁头组件的滑块(slider)。斜坡组件100被附连到基座114,并在HGA112停留时(即,当写入头和读出头空闲时)提供用于悬浮臂108的尖端驻留的表面。在盘驱动器111的记录操作期间,悬浮臂108在枢轴117处旋转,从斜坡组件100分离,并将HGA112的位置移动到旋转存储盘113上的预期信息轨上。在记录期间,滑块由HGA112利用面向旋转存储盘113的滑块的空气支承面悬浮,从而允许写入头磁改变存储位的状态。至于热辅助磁记录,在空气支承面上的近场换能器(NFT)可以耦合来自波导的光能,以便在旋转存储盘113上产生用于磁软化位空间的加热点。
图2示出NFT200的示例性实施例的示意图,其中NFT200被布置在携带磁头组件的滑块的空气支承面(ABS)210上。ABS210是面向存储盘113的滑块表面。在滑块飞越存储盘113上方时,气垫被保持在滑块ABS210与存储盘113的表面之间。如图所示,两个介质波导(WG)芯211、212中被布置为每个均携带光能到NFT200。可以通过TE激光二极管源(未示出)生成光能,其中TE激光二极管源可以通过分隔器(未示出)分成两半。介质波导芯211、212可以是相等长度以确保在ABS210的组合能量波处于相长干涉(constructiveinterference)的实质性相位对准并且对存储盘113的最大能量发射。可替换地,介质波导芯211、212可以是不相等长度,使得入射能量波可以具有在ABS210处优化相长干涉和最大能量幅值的特定相差。两个波导芯211、212可以是基本线性的,并在0度与180度之间的内角(例如,如图2所示约90度)处收敛于接近ABS210的结点(junction)。波导芯的介质材料可以是例如Ta2O5。
如图2中的横截面所示,NFT包括等离子金属条元件202,该金属条元件可以在纵向方向布置在波导芯212上方,其中等离子金属条202的中心线沿波导芯212表面的中心线基本对准。同样,等离子金属条201可以如图2所示被布置在波导芯211上方。来自接近等离子金属条201、202的介质波导芯211、212的光能朝着ABS210沿等离子金属条201、202表面的传播表面等离子体极化激元(propagatingsurfaceplasmonpolariton)(PSPP)励磁。因此,每个等离子金属条元件201、202可以作用为PSPP元件。如截面图所示,可以在等离子金属条201、202与介质波导芯211、212之间存在间隙(例如,约20nm)。可替换地,该间隙可以被省略,并且等离子金属条201、202或等离子金属条201、202的至少一部分可以直接接触介质波导芯211、212。两个介质波导芯211、212和整个NFT200可以通过氧化硅材料来密封。等离子金属条201、202的材料可以是例如金合金。可以用于形成等离子金属条201、202的等离子金属的其他示例包括银或铜合金。
等离子金属条元件201、202可以被配置为如图2所示,收敛于在介质波导芯211、212的结点上方的结点。等离子金属条元件201、202的结点可以出现在公用平面上,或可以通过将一个元件重叠在另一元件上方来形成。等离子金属条元件201、202的结点可以被形成在ABS210处。例如,NFT能量输出发射器可以通过在ABS210处的裸露金属条结点而被形成在ABS210处,最大能量从该结点被传播经过气垫并传播到存储盘113的表面上。发射器的物理尺寸(即,裸露的等离子金属条结点的裸露的等离子金属条结点的宽度)可以基本相当于在盘113的表面上的聚焦的加热点的大小。加热点的目标大小取决于滑块在磁道上方飞越经过时的磁道大小,该磁道大小可以是例如约10-70nm宽。加热点的大小也取决于ABS210与盘113之间的距离。加热点的焦点可以通过最小化间隙距离减来优化。
等离子金属条201、202可以在如图2所示的接收光能的第一端处逐渐变窄(tapered),使得在TE介质波导模式中光能的电场可以朝ABS210以z轴方向传播到等离子金属。等离子金属条201、202的宽度在等离子金属条201、202的一个侧面上以倾斜边缘并在等离子金属条201、202的相对侧面上以基本线性边缘而逐渐变窄。用于说明目的,倾斜边缘在图2中被示为外边缘。然而,等离子金属条201、202可以以其他变型被配置为包括倾斜的内边缘、具有倾斜的内边缘的等离子金属条201、202中的一个和具有倾斜外边缘的等离子金属条201、202中的其他。通过这种逐渐变窄构造,等离子金属条201、202可以同时用作消逝耦合器(evanescentcoupler)和用作偏振转换器,该等离子金属条201、202将TE介质波导芯211、212的光功率输出输送到等离子金属条201、202中。当工作在介质波导的TE模式中时,在波导芯上方的电场在x轴分量最强并且在z轴分量最弱。在光能传播到z轴方向中时,等离子金属条201、202中的渐缩(tapering)被配置为用于以x轴方向转换(或旋转)电场。在能量波达到等离子金属条的固定宽度(未变窄)部分时,激励(excited)的PSPP可以围绕在倾斜边缘的角落有效旋转,将某些能量幅值从x方向传送到z方向。作为示例,通过波长范围为770-880nm以及550nm宽和120nm厚的波导的TE激光,等离子金属条201、202的渐缩尺寸可以在其逐渐变窄部具有约2.5微米的长度以及直线部可以是约550nm宽和2.0微米长。
等离子金属条元件201、202在其最宽部的宽度可以基本相当于介质波导芯211、212的宽度。可替换地,等离子金属条元件201、202在其最宽部的宽度可以比介质波导芯211、212的宽度稍微更宽或稍窄。在实施例中,等离子金属条201、202的宽度可以是在存储盘113上生成的加热点的宽度的至少两倍。在另一实施例中,等离子金属条201、202的宽度可以是在存储盘113上生成的加热点的宽度的至少三倍至六倍。
为实现加热点宽度的所需的聚焦的同时使用更宽的等离子金属条,NFT200可以被配置为具有一个或多个下列特征。发射器可以被配置为使得裸露等离子金属的宽度基本相当于加热点预期宽度。发射器宽度可以通过搭接(lapping)ABS210来控制,直到裸露等离子金属条的结点的宽度尺寸在可接受范围内。而且,NFT210可以被配置为具有不等长度的PSPP元件201、202,从而在ABS210处产生为加热点给出预期聚焦宽度的相长干涉。
在由波导系统中的公用总输入功率驱动时,与垂直于ABS210布置的单PSPP元件的构造相比,如图2所示的两个PSPP元件构造可以提供约两倍的电场幅值。由两个PSPP元件201、202产生的相长干涉允许提高来自激光二极管源的能量输送效率,这转化为EAMR/HAMR装置的更长使用寿命。
NFT200实施例不必局限于如图2所示的两个干涉(interfering)PSPP元件201、202。在替代实施例中,N个(正整数)PSPP元件在ABS210处干涉,在由波导系统中的公用总输入功率驱动时,该N个PSPP元件可以提供电场幅值的约N倍增加。N值可以增加超过2或3,直到在EAMR头的三维布局内的其他寄生干涉变成极限因数。对于N>3,PSPP元件可以被布置在三维构造中(即,不是所有的NPT必须存在于公用的二维平面中)。
图3示出是NFT200的变型的NFT300的示例性实施例,其不同之处在于,与只在其长度的一部分逐渐变窄的PSPP元件201、202相比,PSPP元件301、302在其整个长度逐渐变窄。PSPP元件301、302可以以与上面关于NFT200所述类似的方式布置在介质波导芯311/312上方。
图4示出NFT400的示例性实施例,其是图2的示例性实施例的变型,两者不同之处在于在NFT400中添加等离子金属帽405。用于写入头的磁杆407可以与等离子金属帽405集成,并且在两者之间可以布置薄的扩散阻挡层408以阻止在该磁杆的黑色(ferrous)金属材料与等离子金属帽405的合金材料之间的扩散。等离子金属帽405充当散热片和磁杆407的光块。在替代实施例中,杆407可以从ABS410凹进。
如图4所示,等离子金属帽405可以被配置为具有与ABS410基本对准的直边的半圆。金属帽的大小可以是例如直径为1000nm。等离子金属帽405的厚度不是不是实现精确纳米大小加热点的重要因素,因此,该厚度可以根据提供用于控制NFT400的峰值温度的充分热传递来构造。作为示例,等离子金属帽405可以在厚度上大于30nm。金属帽405可以以不同于半圆形的形状构造,诸如矩形或多边形。等离子金属条元件401、402可以耦合在上面的等离子金属帽405。用于说明目的,等离子金属元件405被描绘为透明揭示在下面的金属条401、402。如截面图所示,可以在等离子金属条401、402与介质波导芯411、412之间存在间隙(例如,约20nm)。可替换地,该间隙可以被省略,并且等离子金属条401、402或等离子金属条401、402的至少一部分可以直接接触介质波导芯411、412。两个介质波导芯411、412和整个NFT400可以通过氧化硅材料来密封。等离子金属帽405的材料可以是例如金合金。可以用于形成等离子金属帽405的等离子金属的其他示例包括银或铜合金。
图5示出NFT500的示例性实施例的示意图,该NFT具有基本垂直于ABS113布置在纵向方向的介质波导芯511上面的单等离子金属条501。这个实施例的NFT500是图2所示的NFT200的变型,除了单PSPP元件501被布置在该NFT中以外。等离子金属条501类似于等离子金属条201是倾斜的,以在从波导芯接收光能的一端形成逐渐变窄的宽度。
图6示出如图5所示的NFT的示例性实施例的变型的示意图。对于如图6所示的NFT600,等离子金属条601的一部分的两个侧面可以被倾斜以形成逐渐变窄的端部。渐缩的尺寸控制电场能量在ABS610处的等离子金属条的侧边缘的聚焦,使得电场的宽度基本等于记录介质上的所需加热点宽度(例如,10-70nm)。等离子金属条601的形状和构造也可以被实施为如图2所示的两个PSPP元件NFT或如上所述具有N个PSPP元件的NFT。
图7示出NFT700的示例性实施例的示意图,该NFT具有与TE波导芯对准并基本垂直于ABS710的单PSPP元件。PSPP元件701的纵长部分延伸超过介质波导711的朝向面的周长(即,顶部表面边缘)。如图7所述,PSPP元件701的中心线可以从TE波导芯711的中心线720被偏移。由于TE波导芯中的电场的z轴分量在TE波导芯的侧边(即,z轴投射到与中心线720对准的波导芯中的地方)最强,使得等离子金属条701的一部分(即,延伸超出TE波导芯的边缘的部分)裸露于波导芯711的侧边721,从而增强电场的捕获和耦合。等离子金属条701的形状和构造也可以被实施为如图2所示的两个PSPP元件NFT或如上所述具有N个PSPP元件的NFT。
图8示出组合关于如图2-6所示的实施例所述的逐渐变窄效应和关于如图7所示的实施例所述的偏移效应的NFT800的示例性实施例的示意图。如图8所示,等离子金属条801相对于下面的波导芯811的中心线820是纵向歪斜的,使得侧边822在纵向方向相对于波导芯811的中心线820是倾斜的。而且,某些等离子金属条元件801延伸超过波导芯811的侧边821,使得等离子金属条801裸露于电场的最强z轴分量所驻留的TE波导芯811的区域。等离子金属条801的形状和构造也可以被实施为如图2所示的两个PSPP元件NFT或如上所述具有N个PSPP元件的NFT。
上述的实施例采用具有健壮宽度的等离子金属条,与用在典型EAMR/HAMR装置中尺寸小的多的等离子元件相比,该等离子金属条更能承受恶劣的服务责任条款的同时仍然能够提供存储盘表面所需的加热点的精确聚焦。等离子金属条被配置为在TE模式中与介质波导芯接口的PSPP元件。
所提供的本公开的各个方面允许本领域的一个普通技术人员能够实践本发明。对于本领域的技术人员来说,对整个本公开陈述的示例性实施例进行各种更改并且本文公开的原理可以推广到其他装置是显而易见的。因此,不是为了将权利要求限制在本公开的各个方面,而是赋予与本权利要求的语言一致的全部范围。在整个本公开描述的示例性实施例的本领域的普通技术人员现在已知或后来已知的各种部件的所有结构和功能等效物通过引用明确并入本文并包含在权利要求中。而且,本文并非旨在公开专用于公众的特征,而不管此类公开是否在权利要求中明确引用。权利要求要素不应在35U.S.C.§112(f)的条款下被解释,除非该要素使用短语“用于...的装置”来明确引用,或在方法权利要求的情况下,该要素使用短语“用于...的步骤”来引用。
Claims (12)
1.一种用于存储盘的能量辅助磁记录的设备,其包括:
工作在横向电模式即TE模式中的多个介质波导芯,所述多个介质波导芯被配置为从能量源接收入射光能并将所述入射光能引导至目标;以及
近场换能器,所述近场换能器形成在空气支承面处并被配置为将从所述多个波导芯接收的光能聚焦并且将聚焦的光能传送到所述存储盘表面上,以便在所述存储盘上生成加热点,所述近场换能器包括:
多个传播表面等离子体极化激元元件即PSPP元件,所述PSPP元件通过来自所述波导芯的光能被励磁,其中所述PSPP元件中的每个包括与所述波导芯纵向对准的布置在单波导芯表面上方的等离子金属条,每个金属条具有接收来自所述波导芯的光能的第一端和裸露于所述空气支承面的第二端,其中每个金属条的宽度朝所述第一端逐渐变窄。
2.根据权利要求1所述的设备,其中沿所述PSPP元件的宽度的一个侧面是完全线性的并且与所述波导芯纵向对准,并且所述PSPP元件的相对的侧面的至少一部分是倾斜的以形成朝向所述第一端的渐缩。
3.根据权利要求1所述的设备,其中所述PSPP元件的两个侧面的至少一部分是倾斜的以形成朝向所述第一端的渐缩。
4.根据权利要求1所述的设备,其中所述多个等离子金属条中的每个与相应波导芯的对应表面之间存在间隙。
5.根据权利要求1所述的设备,其中:
所述波导芯中的每个和对应的PSPP元件是基本线性的并且包括第一端和第二端,
所有PSPP元件的第二端在接近所述空气支承面的结点与裸露在所述空气支承面上的结点的至少一部分连接在一起。
6.根据权利要求3所述的设备,其中所述多个波导芯和对应的PSPP元件相对于所述空气支承面被配置在三维布局中。
7.根据权利要求1所述的设备,其中所述多个PSPP元件在所述目标提供所述入射光能的相长干涉。
8.根据权利要求1所述的设备,还包括布置在所述等离子金属条上方并耦合至所述等离子金属条的等离子金属帽。
9.根据权利要求6所述的设备,还包括布置在所述等离子帽上面的磁杆。
10.一种用于存储盘的能量辅助磁记录的设备,其包括:
工作在横向电模式即TE模式中的多个介质波导芯,所述多个介质波导芯被配置为从能量源接收入射光能并将所述入射光能引导至目标;以及
近场换能器,所述近场换能器在空气支承面形成并被配置为将从所述多个波导芯接收的光能聚焦并且将聚焦的光能传送到所述存储盘表面上,以便在所述存储盘上生成加热点,所述近场换能器包括:
多个传播表面等离子体极化激元元件即PSPP元件,所述PSPP元件通过来自所述波导芯的光能被励磁,其中所述PSPP元件中的每个包括与所述波导芯纵向对准的布置在单波导芯表面上方的等离子金属条,每个金属条具有接收来自所述波导芯的光能的第一端和裸露于所述空气支承面的第二端,每个金属条被布置为一部分延伸超过面向所述金属条的所述波导的表面的周长。
11.一种用于存储盘的能量辅助磁记录的设备,其包括:
工作在横向电模式即TE模式中的多个介质波导芯,所述多个介质波导芯被配置为从能量源接收入射光能并将所述入射光能引导至目标;以及
近场换能器,所述近场换能器在空气支承面形成并被配置为将从所述多个波导芯接收的光能聚焦和将聚焦光能传送到所述存储盘表面上以在所述存储盘上生成加热点,所述近场换能器包括:
多个传播表面等离子体极化激元元件即PSPP元件,所述PSPP元件通过来自所述波导芯的光能被励磁,其中所述PSPP元件中的每个包括与所述波导芯纵向不对准的布置在单波导芯表面上方的等离子金属条,每个金属条具有接收来自所述波导芯的光能的第一端和裸露于所述空气支承面的第二端,每个金属条的一部分被布置为延伸超过面向所述金属条的所述波导的表面的周长。
12.一种磁存储盘驱动器,其包括:
可旋转存储盘;
激光二极管;
工作在横向电模式即TE模式中的多个介质波导芯,所述多个介质波导芯在接近磁记录装置的空气支承面的结点处耦合在一起,每个波导芯被配置为从所述激光二极管接收入射光能;以及
近场换能器,所述近场换能器在所述空气支承面形成用于聚焦从所述波导芯接收的光能并将聚焦光能传送到所述存储盘表面上以生成加热点,所述近场换能器包括:
多个传播表面等离子体极化激元元件即PSPP元件,所述PSPP元件通过来自所述波导芯的光能被励磁,其中所述PSPP元件中的每个包括沿单波导芯的表面的纵向中心线设置的等离子金属条,每个金属条具有第一端以及第二端,所述第一端具有逐渐变窄的宽度以用于接收来自所述波导芯的光能,所述第二端在所述空气支承面具有基本等于所述波导芯的宽度的固定宽度。
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2014
- 2014-07-07 US US14/324,303 patent/US8976635B1/en active Active
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2015
- 2015-06-10 CN CN201510316473.7A patent/CN105321533A/zh active Pending
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2016
- 2016-07-22 HK HK16108804.1A patent/HK1220804A1/zh unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110727057A (zh) * | 2018-07-17 | 2020-01-24 | 希捷科技有限公司 | 具有使来自波导的杂散光转向的特征的输入耦合器 |
CN110727057B (zh) * | 2018-07-17 | 2022-02-18 | 希捷科技有限公司 | 具有使来自波导的杂散光转向的特征的输入耦合器 |
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US8976635B1 (en) | 2015-03-10 |
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