CN105355667A - Resonant tunneling diode for generating negative differential resistance - Google Patents
Resonant tunneling diode for generating negative differential resistance Download PDFInfo
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- CN105355667A CN105355667A CN201510694974.9A CN201510694974A CN105355667A CN 105355667 A CN105355667 A CN 105355667A CN 201510694974 A CN201510694974 A CN 201510694974A CN 105355667 A CN105355667 A CN 105355667A
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- gan
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- isolated area
- collector
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- 230000005641 tunneling Effects 0.000 title abstract 5
- 238000011160 research Methods 0.000 claims abstract description 6
- 238000013461 design Methods 0.000 claims abstract description 4
- 230000005684 electric field Effects 0.000 claims abstract description 4
- 230000005533 two-dimensional electron gas Effects 0.000 claims abstract description 4
- 238000004088 simulation Methods 0.000 claims abstract description 3
- 238000005036 potential barrier Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 2
- 229910002704 AlGaN Inorganic materials 0.000 abstract description 4
- 238000002955 isolation Methods 0.000 abstract 3
- 238000005516 engineering process Methods 0.000 description 6
- 230000003068 static effect Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000000701 chemical imaging Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/88—Tunnel-effect diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Abstract
The invention discloses a novel structure of an active region of a resonant tunneling diode for generating negative differential resistance. The structure can generate ampere output current, and can generate watt terahertz signal output power when applied to a terahertz signal source design; a quantum well in the active region of the resonant tunneling diode is formed by a AlGaN/GaN/AlGaN double-barrier and single-well structure; the quantum well is clamped between a Al*Ga1-xN isolation region with a ladder heterostructure and a GaN isolation region; the three-layer sandwich structure is also clamped between an n-type AlN emitter region and an n-type GaN collector region; the collector region and the emitter region are ohmic contact regions; heavy doping is adopted by the collector region and the emitter region; and the other regions are not doped. The emitter region and the collector region play a role in forming an ohmic contact and are connected with two electrodes; the quantum well region plays a role in forming a quantum resonant tunneling effect, so as to obtain the negative differential resistance; and the isolation region with the ladder heterostructure plays roles in forming a two-dimensional electron gas, reducing a depletion electric field of the collector region and improving output current. Theoretical analysis and temperature simulation are carried out at a room temperature (300K) to obtain a negative differential resistance region with the maximal current in a research report of an existing resonant tunneling diode.
Description
Technical field
The present invention relates to electronic component technology field, particularly relate to a kind of GaN base resonance tunnel-through diode device, can be applicable to produce Terahertz oscillator signal.
Background technology
Terahertz frequency range has wide application prospects and is subject to the attention of scientific circles in ultrahigh speed wireless communication technology and spectral imaging technology.In order to realize these application, small and continuous print THz source is key technology place.As one of terahertz sources source electricity device, resonance tunnel-through diode (RTD) is all research focus all the time.There is bottleneck at Terahertz Applied research fields in GaAs base RTD, such as: higher frequency restriction, power output and working temperature.
GaN base RTD, because GaN material has high mobility, temperature stability and broad stopband width characteristic, is expected to design high power THz source under room temperature, receives increasing concern.The theory analysis of the GaN base resonance tunnel-through diode structure of current research and practical devices test show R=-67 Europe, the GaN base RTD of CPVR:1.08, power output 0.53mW.
AlGaN and GaN heterostructure interface produces polarization charge due to lattice defect, forms two-dimensional electron gas.In invention, have employed ladder heterostructure isolated area, improve carrier mobility by two-dimensional electron gas, add emitter region Carrier Injection Efficiency; Decrease collector region simultaneously and exhaust electric field, thus reduce carrier transport time in resonance tunnel-through diode.Theory analysis shows that this device obtains negative differential resistance, and in this region, have the excursion of larger output current and electric current, voltage, can improve power output to W level.
Summary of the invention
The object of the invention is to the deficiency for device architecture in existing result of study, propose one and there is larger output current, produce the GaN base resonance tunnel-through diode structure of negative differential resistance, as shown in Figure 1.
The key of the technology of the present invention is: on the basis of existing GaN base resonance tunnel-through diode structure, and design staged heterostructure is as the isolated area of emitter region to quantum well.
In GaN base resonance tunnel-through diode structure of the present invention, quantum well is by Al
0.2ga
0.8n/GaN/Al
0.2ga
0.8n double potential barrier unipotential well structure forms, and adopts the AlGaN of low al composition to grow Lattice Matching in GaN potential well, thus improves heterojunction quality, reduce polarized electric field, suppress the degradation phenomena of negative differential resistance characteristic.Be clipped in by this quantum well structure between the N-shaped AlN emitter region of 100nm and the N-shaped GaN collector region of 100nm, collector region and emitter region are ohmic contact regions, and adopt heavy doping, doping content is 1 × 10
19cm
-3; The Al of the ladder heterojunction of one deck 5nm is devised between quantum well and emitter region
xga
1-xn isolated area, in isolated area, the component x of Al is from the close linear x=0 reduced near potential barrier of emitter region end x=1; Collector region end separator adopts GaN, and these regions all undope.Fig. 1 presents the resonance tunnel-through diode structure chart of band heterostructure buffering area, and Fig. 2 presents the static conduction band profile of this structure.
The present invention has carried out theory analysis to designed GaN base resonance tunnel-through diode, adopts sectional area to be 6 × 5um in analytic process to designed device
2, electrode tip contact resistivity is set to 4.36 × 10
-3Ω cm
2in order to consistent with actual parasitic series resistance.At room temperature, as shown in Figure 3, this is the negative differential resistance region that in the report of this device research work at present, gained output current is maximum to gained simulation result for theory analysis and simulated temperature.
Accompanying drawing explanation
Fig. 1 is the GaN base resonance tunnel-through diode active area structure schematic diagram of band staged isolated area.
Fig. 2 is static conduction band profile.
Fig. 3 is I-V performance plot.
Claims (6)
1. one kind produces active area in the resonance tunnel-through diode of negative differential resistance and includes emitter region, collector region, quantum well region, staged heterostructure emitter isolated area and GaN collector electrode isolated area.
2. according to the active area subregion composition active area structure of claims 1: quantum well is clipped between staged heterostructure emitter isolated area and GaN collector electrode isolated area, and resulting structures is clipped in again between emitter region and collector region and forms integrated active district.
3. set up novel GaN base resonance tunnel-through diode theoretical analysis model structure according to claims 2, this structure is described below from top to bottom: the emitter electrode district of device, the emitter region heavily doped region of 100nm thickness, ladder heterostructure form the Al of 5nm isolated area, 1.5nm
0.2ga
0.8the GaN potential well of N potential barrier, 1.5nm, the Al of 1.5nm
0.2ga
0.8the collector electrode district of the GaN isolated area of N potential barrier, 5nm, the collector region heavily doped region of 100nm thickness, device.
4., according to the GaN base resonance tunnel-through diode active area structure of claims 2 and the theoretical analysis model of claims 3, it is characterized in that: the Al having one deck ladder heterostructure between quantum well and emitter region
xga
1-xn isolated area, in isolated area, the component x of Al is near the linear x=0 reduced near quantum well potential barrier of emitter region end x=1, divides in order to 5 layers in theoretical analysis model.
5. according to the isolated area of the ladder heterostructure of claims 4, it is characterized in that defining two-dimensional electron gas, improve carrier mobility, reduce collector depletion region electric field, improve output current, obtain the negative differential resistance region of maximum current in the report of this device research at present.
6., according to theory analysis and the simulation result of claims 5, it is characterized in that this device application in the design of terahertz signal source, a watt terahertz signal for level power output can be produced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510694974.9A CN105355667A (en) | 2015-10-26 | 2015-10-26 | Resonant tunneling diode for generating negative differential resistance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510694974.9A CN105355667A (en) | 2015-10-26 | 2015-10-26 | Resonant tunneling diode for generating negative differential resistance |
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| Publication Number | Publication Date |
|---|---|
| CN105355667A true CN105355667A (en) | 2016-02-24 |
Family
ID=55331599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510694974.9A Pending CN105355667A (en) | 2015-10-26 | 2015-10-26 | Resonant tunneling diode for generating negative differential resistance |
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| Country | Link |
|---|---|
| CN (1) | CN105355667A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105895670A (en) * | 2016-04-15 | 2016-08-24 | 四川大学 | Resonant tunneling diode provided with GaN quantum well |
| CN110310989A (en) * | 2019-07-23 | 2019-10-08 | 上海科技大学 | A kind of device architecture of double heterojunction unipolar transistor |
| CN110729394A (en) * | 2019-10-12 | 2020-01-24 | 深圳第三代半导体研究院 | Negative resistance type GaN pressure sensor and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1091945C (en) * | 1995-03-07 | 2002-10-02 | 摩托罗拉公司 | Ultra-small semiconductor devices and methods of fabricating and contacting |
| US7002175B1 (en) * | 2004-10-08 | 2006-02-21 | Agency For Science, Technology And Research | Method of making resonant tunneling diodes and CMOS backend-process-compatible three dimensional (3-D) integration |
| CN104733545A (en) * | 2015-02-17 | 2015-06-24 | 天津大学 | RTD with emitter region In content gradual change collector region and high-In transition layers |
| CN104752524A (en) * | 2015-02-17 | 2015-07-01 | 天津大学 | Resonant tunneling diode device with ultra-narrow double wells |
-
2015
- 2015-10-26 CN CN201510694974.9A patent/CN105355667A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1091945C (en) * | 1995-03-07 | 2002-10-02 | 摩托罗拉公司 | Ultra-small semiconductor devices and methods of fabricating and contacting |
| US7002175B1 (en) * | 2004-10-08 | 2006-02-21 | Agency For Science, Technology And Research | Method of making resonant tunneling diodes and CMOS backend-process-compatible three dimensional (3-D) integration |
| CN104733545A (en) * | 2015-02-17 | 2015-06-24 | 天津大学 | RTD with emitter region In content gradual change collector region and high-In transition layers |
| CN104752524A (en) * | 2015-02-17 | 2015-07-01 | 天津大学 | Resonant tunneling diode device with ultra-narrow double wells |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105895670A (en) * | 2016-04-15 | 2016-08-24 | 四川大学 | Resonant tunneling diode provided with GaN quantum well |
| CN110310989A (en) * | 2019-07-23 | 2019-10-08 | 上海科技大学 | A kind of device architecture of double heterojunction unipolar transistor |
| CN110729394A (en) * | 2019-10-12 | 2020-01-24 | 深圳第三代半导体研究院 | Negative resistance type GaN pressure sensor and preparation method thereof |
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