CN105439078A - MEMS device and preparation method thereof and electronic device - Google Patents
MEMS device and preparation method thereof and electronic device Download PDFInfo
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- CN105439078A CN105439078A CN201410389156.3A CN201410389156A CN105439078A CN 105439078 A CN105439078 A CN 105439078A CN 201410389156 A CN201410389156 A CN 201410389156A CN 105439078 A CN105439078 A CN 105439078A
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Abstract
The present invention relates to a MEMS device and a preparation method thereof and an electronic device, and the method comprises the following steps: S1, providing a substrate, wherein the substrate is provided with a first sacrificial material layer and a vibration membrane material layer located on the first sacrificial material layer, a plurality of openings are formed in the vibration membrane material layer to expose the first sacrificial material layer; and S2, depositing a high-K material layer and flattening to fill the openings to form a vibration membrane. Advantages are as follows: (1) Membrane impact resistance is increased, (2) Membrane buffer damage caused by a stopper structure can be completely avoided, (3) a technological process is simplified, cost is reduced and productivity is increased, (4) early failure phenomena of the MEMS device is improved, and (5) by introduction of a HK material, the sensitivity of the MEMS device can be improved / maintained.
Description
Technical field
The present invention relates to semiconductor applications, particularly, the present invention relates to a kind of MEMS and preparation method thereof, electronic installation.
Background technology
Along with the development of semiconductor technology, on the market of sensor (motionsensor) series products, smart mobile phone, integrated CMOS and MEMS (MEMS) device become most main flow, state-of-the-art technology day by day, and along with the renewal of technology, the developing direction of this kind of transmission sensors product is the size that scale is less, high-quality electric property and lower loss.
Wherein, MEMS sensor is widely used in automotive electronics: as TPMS, engine oil pressure sensor, automobile brake system air pressure probe, air intake manifold of automotive engine pressure sensor (TMAP), common rail for diesel engine pressure sensor; Consumer electronics: as tire gauge, sphygmomanometer, cupboard scale, health scale, washing machine, dish-washing machine, refrigerator, micro-wave oven, baking box, dust catcher pressure sensor, A/C pressure sensor, washing machine, water dispenser, dish-washing machine, solar water heater Liquid level pressure sensor; Industrial electronic: as digital pressure gauge, digital stream scale, industrial batching weighing etc.
In MEMS field; the operation principle of described MEMS is the change being produced electric capacity by the motion of concussion film (Membrane); capacitance change is utilized to carry out computing and work; described MEMS is in use because motion amplitude is excessive; usually can cause shaking film (Membrane) crack damage, in MEMS, devise limiting layer (Stopstructure) avoid concussion film (Membrane) to cause because motion amplitude is excessive losing efficacy to solve this problem.
Current described limiting layer 10 (Stopstructure) as shown in figure 1h, described limiting layer (Stopstructure) is although can prevent concussion film (Membrane) from breaking because shock range causes too greatly, under but earthquake film (Membrane) and limiting layer (Stopstructure) impact, also can form some faint damages, cause MEMS to lose efficacy ahead of time.
Therefore need to be improved further described MEMS and preparation method thereof, to eliminate the problems referred to above.
Summary of the invention
In summary of the invention part, introduce the concept of a series of reduced form, this will further describe in detailed description of the invention part.Summary of the invention part of the present invention does not also mean that the key feature and essential features that will attempt to limit technical scheme required for protection, does not more mean that the protection domain attempting to determine technical scheme required for protection.
The present invention, in order to overcome current existing problems, provides a kind of preparation method of MEMS, comprising:
Step S1: provide substrate, is formed with the first sacrificial material layer on the substrate and is positioned at the concussion membrane layers in described first sacrificial material layer, wherein, in described concussion membrane layers, be formed with some openings, to expose described first sacrificial material layer;
Step S2: deposition hafnium layer is also planarized, to fill described opening, forms concussion film.
Alternatively, in described step S1, described opening is linear.
Alternatively, in described step S1, described some openings are transverse direction and/or longitudinal arrangement, to form aperture array.
Alternatively, in described step S1, described concussion membrane layers is polygonized structure.
Alternatively, in described step S1, described concussion membrane layers is hexagonal structure, and each angle of described hexagonal structure is formed concussion film anchor portion.
Alternatively, after described step S2, described method also comprises:
Step S3: deposit the second sacrificial material layer, to cover described concussion film;
Step S4: form spaced some fixed plates in described second sacrificial material layer, above described concussion film;
Step S5: deposition limiting layer, to cover described fixed plate and described second sacrificial material layer;
Step S6: the back side of substrate described in patterning, to expose described first sacrificial material layer;
Step S7: to remove below described concussion film middle part and described first sacrificial material layer of top and described second sacrificial material layer, to form cavity.
Alternatively, in described step S7, select double-sided etching process, with to remove below described concussion film simultaneously and described first sacrificial material layer of top and described second sacrificial material layer.
Alternatively, described step S1 comprises:
Step S11: substrate is provided, and deposit described first sacrificial material layer on the substrate;
Step S12: form concussion membrane layers in described first sacrificial material layer;
Step S13: the mask layer forming patterning in described concussion membrane layers;
Step S14: shake membrane layers for described in mask etch with described mask layer, to form described opening.
Alternatively, described step S4 comprises:
Step S41: form conductive material layer in described second sacrificial material layer;
Step S42: the mask layer forming patterning on described conductive material layer;
Step S43: with described mask layer for conductive material layer described in mask etch, to form spaced described fixed plate.
Present invention also offers a kind of MEMS, comprising:
Concussion film, the hafnium layer comprising concussion membrane layers and be embedded in described concussion membrane layers;
Fixed plate, comprises some spaced parts, is positioned at the top of described concussion film;
Cavity, between described concussion film and described fixed plate.
Alternatively, described hafnium layer is linear structure.
Alternatively, the hafnium layer of described some linear structures is transverse direction and/or longitudinal arrangement, to form linear structure array.
Alternatively, described hafnium layer runs through and is embedded in described concussion membrane layers.
Alternatively, described concussion membrane layers is polygonized structure.
Alternatively, described concussion membrane layers is hexagonal structure, and each angle of described hexagonal structure is formed concussion film anchor portion.
Alternatively, described MEMS also comprises the sensing opening be positioned at below described concussion film further, for realizing the sensing of pressure.
Present invention also offers a kind of electronic installation, comprise above-mentioned MEMS.
The present invention is in order to solve problems of the prior art, provide a kind of MEMS and preparation method thereof, linear hafnium layer is introduced in earthquake film in described MEMS preparation, described hafnium layer can increase the impact resistance of described concussion film, and the sensitivity of described concussion film can not be affected, by shaking the change of film (Membrane) shape and structure, concussion film (Membrane) is prevented to be subject to impacting the fracture phenomena caused.
The invention has the advantages that:
(1) impact resistance of Membrane is increased.
(2) completely avoid the buffering damage that locating part (Stoper) structure causes Membrane.
(3) simplification of flowsheet, reduces costs, and improves production capacity.
(4) the premature failure phenomenon of MEMS is improved.
(5) introduce HK material, improve/maintain the sensitivity (sensitivity) of MEMS.
Accompanying drawing explanation
Following accompanying drawing of the present invention in this as a part of the present invention for understanding the present invention.Shown in the drawings of embodiments of the invention and description thereof, be used for explaining device of the present invention and principle.In the accompanying drawings,
Fig. 1 a-1h is the preparation process schematic diagram of MEMS in prior art;
The preparation process schematic diagram that Fig. 2 a-2i is MEMS described in the embodiment of the invention;
Preparation technology's flow chart that Fig. 3 is MEMS described in the embodiment of the invention.
Detailed description of the invention
In the following description, a large amount of concrete details is given to provide more thorough understanding of the invention.But, it is obvious to the skilled person that the present invention can be implemented without the need to these details one or more.In other example, in order to avoid obscuring with the present invention, technical characteristics more well known in the art are not described.
Should be understood that, the present invention can implement in different forms, and should not be interpreted as the embodiment that is confined to propose here.On the contrary, provide these embodiments will expose thoroughly with complete, and scope of the present invention is fully passed to those skilled in the art.In the accompanying drawings, in order to clear, the size in Ceng He district and relative size may be exaggerated.Same reference numerals represents identical element from start to finish.
Be understood that, when element or layer be called as " ... on ", " with ... adjacent ", " being connected to " or " being coupled to " other element or layer time, its can directly on other element or layer, with it adjacent, connect or be coupled to other element or layer, or the element that can exist between two parties or layer.On the contrary, when element be called as " directly exist ... on ", " with ... direct neighbor ", " being directly connected to " or " being directly coupled to " other element or layer time, then there is not element between two parties or layer.Although it should be understood that and term first, second, third, etc. can be used to describe various element, parts, district, floor and/or part, these elements, parts, district, floor and/or part should not limited by these terms.These terms be only used for differentiation element, parts, district, floor or part and another element, parts, district, floor or part.Therefore, do not departing under the present invention's instruction, the first element discussed below, parts, district, floor or part can be expressed as the second element, parts, district, floor or part.
Spatial relationship term such as " ... under ", " ... below ", " below ", " ... under ", " ... on ", " above " etc., here can be used thus the relation of the element of shown in description figure or feature and other element or feature for convenience of description.It should be understood that except the orientation shown in figure, spatial relationship term intention also comprises the different orientation of the device in using and operating.Such as, if the device upset in accompanying drawing, then, be described as " below other element " or " under it " or " under it " element or feature will be oriented to other element or feature " on ".Therefore, exemplary term " ... below " and " ... under " upper and lower two orientations can be comprised.Device can additionally orientation (90-degree rotation or other orientation) and as used herein spatial description language correspondingly explained.
The object of term is only to describe specific embodiment and not as restriction of the present invention as used herein.When this uses, " one ", " one " and " described/to be somebody's turn to do " of singulative is also intended to comprise plural form, unless context is known point out other mode.It is also to be understood that term " composition " and/or " comprising ", when using in this specification, determine the existence of described feature, integer, step, operation, element and/or parts, but do not get rid of one or more other feature, integer, step, operation, element, the existence of parts and/or group or interpolation.When this uses, term "and/or" comprises any of relevant Listed Items and all combinations.
In order to thoroughly understand the present invention, detailed step and detailed structure will be proposed in following description, to explain technical scheme of the present invention.Preferred embodiment of the present invention is described in detail as follows, but except these are described in detail, the present invention can also have other embodiments.
At present, the preparation method of described MEMS is as shown in Fig. 1 a-1h, first substrate 101 is provided, described substrate 101 is formed the first sacrificial material layer 102 and concussion film (Membrane) material layer, as shown in Figure 1a, then film (Membrane) material layer is shaken described in patterning to form concussion film (Membrane) 103, to reduce the critical size of described concussion film (Membrane).
And then deposition the first sacrificial material layer 102, to cover described concussion film 103, and the first sacrificial material layer 102 described in patterning, to form some first openings 10 above described concussion film 103, expose described concussion film 103, as shown in Figure 1 b.
Further, then deposit the second sacrificial material layer 104, to fill described first opening 10, cover described first sacrificial material layer 102, above the first opening 10 described in described second sacrificial material layer, form groove 11, as illustrated in figure 1 c simultaneously.
Then described second sacrificial material layer 104 between described groove 11 forms fixed plate 105, and as shown in Figure 1 d, wherein said fixed plate 105 and described concussion film 103 form capacitor arrangement in subsequent step; Then in described second sacrificial material layer 104, form limiting layer 106, cover described second sacrificial material layer 104 to fill described groove 11, as shown in fig. le simultaneously.
The back of substrate 101 described in patterning, to form the second opening, expose described first sacrificial material layer 102, as shown in Figure 1 f, then the first sacrificial material layer 102 and the second sacrificial material layer 104 be positioned at above and below concussion film 103 middle part is removed, to form cavity between described concussion film 103 and described fixed plate 105, and expose the limiting layer 106 above described concussion film 103, as shown in Figure 1 g.
Bend deformation after described concussion film 103 experiences pressure; wherein said limiting layer 106 can avoid the excessively deformation of concussion film 103; described concussion film 103 is played a protective role; can prevent from concussion film (Membrane) from causing because shock range is too large to break; under but earthquake film (Membrane) and limiting layer (Stopstructure) impact; also can form some faint damages, cause MEMS to lose efficacy ahead of time.
Embodiment 1
In order to solve problems of the prior art, the invention provides a kind of preparation method of MEMS, below in conjunction with accompanying drawing 2a-2i, described method being described further.
First, perform step 201, substrate 201 is provided, and forms the first sacrificial material layer 202 in described substrate 201.
Particularly, as shown in Figure 2 a, wherein said substrate 201 at least comprises Semiconductor substrate, and described Semiconductor substrate can be at least one in following mentioned material: stacked SiGe (S-SiGeOI), germanium on insulator SiClx (SiGeOI) and germanium on insulator (GeOI) etc. on stacked silicon (SSOI), insulator on silicon, silicon-on-insulator (SOI), insulator.Semiconductor substrate can be defined active area.
Deposit the first sacrificial material layer 202 on the substrate, wherein, described first sacrificial material layer 202 can select the material with described Semiconductor substrate and the concussion film that formed in described first sacrificial material layer 202 with larger etching selectivity, such as, can select oxide skin(coating), such as SiO
2with materials such as carbon doped silicon oxide (SiOC), but be not limited to above-mentioned example.
Perform step 202, described first sacrificial material layer 202 forms concussion membrane layers 203 and patterning, to form some openings 20 in described concussion membrane layers 203.
Particularly, as shown in Figure 2 a, deposition concussion membrane layers in described first sacrificial material layer 202, to cover described first sacrificial material layer 202, wherein, described concussion membrane layers can select the material such as polysilicon, SiGe, is not limited to a certain.In this embodiment, described concussion membrane layers selects polysilicon.
In this application in order to improve the shock resistance of described concussion film, further improvement has been done to the shape of described concussion film, the concussion film of square structure in prior art is become polygonized structure (being at least pentagon or more), the such as hexagon shown in Fig. 2 i.
Further, when described concussion membrane layers 203 is in polygonized structure, each angle of described polygonized structure is formed with concussion film anchor portion.
Membrane layers 203 is shaken described in patterning, following method can be selected particularly: in described concussion membrane layers, form mask layer to form some openings 20, the pattern of opening 20 is formed in described mask layer, membrane layers is shaken for described in mask etch with described mask layer, with by the design transfer of described opening 20 in described concussion membrane layers, form described opening 20, finally remove described mask layer.
In this step, the shape of described opening is for being linear opening, and described linear opening is strip, and the arrangement of rule, such as described some openings 20 are in transverse direction and/or longitudinal arrangement, to form aperture array, as shown in fig. 2i.
Perform step 203, deposition hafnium layer is also planarized, to fill described opening 20, forms concussion film.
Particularly, as shown in Figure 2 b, in this step, deposited high-k material layer 204 is to fill described opening 20 and to cover described concussion membrane layers 203.
Wherein, described high-k material layer 204 can select such as TiO
2, Al
2o
3, ZrO
2, HfO
2, Ta
2o
5, La
2o
3high-k dielectric in one.Or described high-k material layer 204 can also at Hf0
2middlely introduce the element such as Si, Al, N, La, Ta and the hafnium etc. that obtains of the ratio optimizing each element.
Alternatively, the formation method of described high-k material layer 204 can be physical gas-phase deposition or atom layer deposition process.
Wherein, the thickness of described high-k material layer 204 is not limited to a certain number range, can fill described opening 20 completely.
Then planarisation step is performed, planarized described high-k material layer 204 is to described concussion membrane layers 203 in this step, stop during to expose described concussion membrane layers 203, as shown in Figure 2 c, flattening method conventional in field of semiconductor manufacture can be used in this step to realize the planarized of surface.The limiting examples of this flattening method comprises mechanical planarization method and chemically mechanical polishing flattening method.
Perform step 204, deposit the second sacrificial material layer 205, to cover described concussion film.
Particularly, as shown in Figure 2 d, step forms groove or breach in this step, also can not form locating part in subsequent steps, encounter described locating part, cause damage during to prevent described concussion film Oscillation Amplitude excessive.
The method of conformal deposited is selected to deposit described second sacrificial material layer 205 in this step, wherein, described second sacrificial material layer 205 can select the material with described Semiconductor substrate and described concussion film with larger etching selectivity, such as, be chosen as oxide skin(coating), such as SiO
2with materials such as carbon doped silicon oxide (SiOC), be not limited to a certain.
Alternatively, described first sacrificial material layer 202 and described second sacrificial material layer 205 select identical material.
Perform step 205, described second sacrificial material layer 204 forms spaced some fixed plates 206 above described concussion film.
Particularly, as shown in Figure 2 e, described second sacrificial material layer 205 forms some fixed plates 206, for the formation of the top electrode of capacitor, wherein, the conductive material that described fixed plate 206 can select this area conventional, is not limited to a certain, polysilicon can be selected in this embodiment as described fixed plate 206.
Form the method for described fixed plate 206 including, but not limited to following step: in described second sacrificial material layer 205, form conductive material layer; Described conductive material layer is formed the mask layer of patterning; With described mask layer for conductive material layer described in mask etch, to form spaced fixed plate 206 above described concussion film, finally remove described mask layer.
Perform step 206, deposition limiting layer 207, to cover described fixed plate 206 and described second sacrificial material layer 204.
As shown in figure 2f, described fixed plate 206 and described second sacrificial material layer 205 deposit limiting layer 207, and wherein said limiting layer 207 can select nitride layer, such as SiN, but is not limited to this material.
Perform step 207, the back side of substrate 201 described in patterning, to expose described first sacrificial material layer 202.
Particularly, as shown in Figure 2 g, described substrate 201 of reversing in this step, to expose the back side of described substrate, then etches the back side of described substrate, to form the larger sensing opening of critical size, exposes described first sacrificial material layer 202.
Wherein, described sensing opening, in subsequent steps for ambient pressure being passed to described concussion film, makes described concussion film generation deformation, to change the distance between described concussion film and fixed plate, thus the electric capacity changed between the two, quantitative measurement is made to the change of pressure.
Perform step 208, remove described first sacrificial material layer 202 above and below described concussion film middle part and described second sacrificial material layer 205, to form cavity.
Particularly, as shown in fig. 2h, double-sided etching process is selected in this step, to remove described first sacrificial material layer 202 above and below described concussion film and described second sacrificial material layer 20 simultaneously.
Wherein, when described first sacrificial material layer 202 and described second sacrificial material layer 205 all select oxide skin(coating), the wet etching of TMAH can be selected to remove described first sacrificial material layer 202 and described second sacrificial material layer 205.
The mass fraction of described TMAH solution is 0.1%-10%, and described wet etching temperature is 25-90 DEG C, and described wet etch time is 10s-1000s, but is not limited to this example, can also select the additive method that this area is conventional.
After described first sacrificial material layer 202 of removal and described second sacrificial material layer 205, between described fixed plate 206 and described concussion film, form cavity, form the dielectric medium of capacitor arrangement.
So far, the introduction of correlation step prepared by the MEMS completing the embodiment of the present invention.After the above step, other correlation step can also be comprised, repeat no more herein.Further, in addition to the foregoing steps, the preparation method of the present embodiment can also comprise other steps among each step above-mentioned or between different steps, and these steps all can be realized by various technique of the prior art, repeat no more herein.
Carry out simulation by the MEMS prepared the method for the invention to find; receiving under identical pressure; concussion film (Membrane) vertical tremor amplitude is effectively reduced; such as under the power effect receiving 20uN; Oscillation Amplitude will be 2.4u of the present invention from 6u of the prior art, effectively protect breaking of causing because Membrane vibration amplitude is excessive.
Further, the device sensitivity that described method is prepared into improves further, found through experiments, and under the power effect of 20uN, the capacitance change produced in the concussion membrane structure adding high K (High-K) material is larger.
The present invention is in order to solve problems of the prior art, provide a kind of MEMS and preparation method thereof, linear hafnium layer is introduced in earthquake film in described MEMS preparation, described hafnium layer can increase the impact resistance of described concussion film, and the sensitivity of described concussion film can not be affected, by shaking the change of film (Membrane) shape and structure, concussion film (Membrane) is prevented to be subject to impacting the fracture phenomena caused.
The invention has the advantages that:
(1) impact resistance of Membrane is increased.
(2) completely avoid the buffering damage that locating part (Stoper) structure causes Membrane.
(3) simplification of flowsheet, reduces costs, and improves production capacity.
(4) the premature failure phenomenon of MEMS is improved.
(5) introduce HK material, improve/maintain the sensitivity (sensitivity) of MEMS.
Preparation technology's flow chart that Fig. 3 is MEMS described in the embodiment of the invention, specifically comprises the following steps:
Step S1: provide substrate, is formed with the first sacrificial material layer on the substrate and is positioned at the concussion membrane layers in described first sacrificial material layer, wherein, in described concussion membrane layers, be formed with some openings, to expose described first sacrificial material layer;
Step S2: deposition hafnium layer is also planarized, to fill described opening, forms concussion film.
Embodiment 2
Present invention also offers a kind of MEMS, as shown in fig. 2h, described MEMS comprises:
Concussion film, the hafnium layer 204 comprising concussion membrane layers 203 and be embedded in described concussion membrane layers;
Fixed plate 206, comprises some spaced parts, is positioned at the top of described concussion film;
Cavity, between described concussion film and described fixed plate 206.
Wherein, described hafnium layer is linear structure.
The hafnium layer of described some linear structures is transverse direction and/or longitudinal arrangement, to form linear structure array.
Described hafnium layer runs through and is embedded in described concussion membrane layers.
Described concussion membrane layers 203, in polygonized structure, such as, in hexagonal structure, each angle of described hexagonal structure is formed with concussion film anchor portion.
Further, described MEMS also comprises the sensing opening be positioned at below described concussion film further, for realizing the sensing of pressure.
Linear hafnium layer is introduced in MEMS earthquake film of the present invention, described hafnium layer can increase the impact resistance of described concussion film, and the sensitivity of described concussion film can not be affected, by shaking the change of film (Membrane) shape and structure, concussion film (Membrane) is prevented to be subject to impacting the fracture phenomena caused, simplify technological process, reduce costs, improve production capacity.
Embodiment 3
Present invention also offers a kind of electronic installation, comprise the MEMS described in embodiment 2.Wherein, semiconductor devices is the MEMS described in embodiment 2, or the MEMS that the preparation method according to embodiment 1 obtains.
The electronic installation of the present embodiment, can be mobile phone, panel computer, notebook computer, net book, game machine, television set, VCD, DVD, navigator, camera, video camera, recording pen, any electronic product such as MP3, MP4, PSP or equipment, also can be any intermediate products comprising described MEMS.The electronic installation of the embodiment of the present invention, owing to employing above-mentioned MEMS, thus has better performance.
The present invention is illustrated by above-described embodiment, but should be understood that, above-described embodiment just for the object of illustrating and illustrate, and is not intended to the present invention to be limited in described scope of embodiments.In addition it will be appreciated by persons skilled in the art that the present invention is not limited to above-described embodiment, more kinds of variants and modifications can also be made according to instruction of the present invention, within these variants and modifications all drop on the present invention's scope required for protection.Protection scope of the present invention defined by the appended claims and equivalent scope thereof.
Claims (17)
1. a preparation method for MEMS, comprising:
Step S1: provide substrate, is formed with the first sacrificial material layer on the substrate and is positioned at the concussion membrane layers in described first sacrificial material layer, wherein, in described concussion membrane layers, be formed with some openings, to expose described first sacrificial material layer;
Step S2: deposition hafnium layer is also planarized, to fill described opening, forms concussion film.
2. method according to claim 1, is characterized in that, in described step S1, described opening is linear.
3. method according to claim 1, is characterized in that, in described step S1, described some openings are transverse direction and/or longitudinal arrangement, to form aperture array.
4. method according to claim 1, is characterized in that, in described step S1, described concussion membrane layers is polygonized structure.
5. method according to claim 1, is characterized in that, in described step S1, described concussion membrane layers is hexagonal structure, and each angle of described hexagonal structure is formed concussion film anchor portion.
6. method according to claim 1, is characterized in that, after described step S2, described method also comprises:
Step S3: deposit the second sacrificial material layer, to cover described concussion film;
Step S4: form spaced some fixed plates in described second sacrificial material layer, above described concussion film;
Step S5: deposition limiting layer, to cover described fixed plate and described second sacrificial material layer;
Step S6: the back side of substrate described in patterning, to expose described first sacrificial material layer;
Step S7: to remove below described concussion film middle part and described first sacrificial material layer of top and described second sacrificial material layer, to form cavity.
7. method according to claim 6, is characterized in that, selects double-sided etching process in described step S7, with to remove below described concussion film simultaneously and described first sacrificial material layer of top and described second sacrificial material layer.
8. method according to claim 1, is characterized in that, described step S1 comprises:
Step S11: substrate is provided, and deposit described first sacrificial material layer on the substrate;
Step S12: form concussion membrane layers in described first sacrificial material layer;
Step S13: the mask layer forming patterning in described concussion membrane layers;
Step S14: shake membrane layers for described in mask etch with described mask layer, to form described opening.
9. method according to claim 1, is characterized in that, described step S4 comprises:
Step S41: form conductive material layer in described second sacrificial material layer;
Step S42: the mask layer forming patterning on described conductive material layer;
Step S43: with described mask layer for conductive material layer described in mask etch, to form spaced described fixed plate.
10. a MEMS, comprising:
Concussion film, the hafnium layer comprising concussion membrane layers and be embedded in described concussion membrane layers;
Fixed plate, comprises some spaced parts, is positioned at the top of described concussion film;
Cavity, between described concussion film and described fixed plate.
11. MEMS according to claim 10, is characterized in that, described hafnium layer is linear structure.
12. MEMS according to claim 11, is characterized in that, the hafnium layer of described some linear structures is transverse direction and/or longitudinal arrangement, to form linear structure array.
13. MEMS according to claim 10, is characterized in that, described hafnium layer runs through and is embedded in described concussion membrane layers.
14. MEMS according to claim 10, is characterized in that, described concussion membrane layers is polygonized structure.
15. MEMS according to claim 10, is characterized in that, described concussion membrane layers is hexagonal structure, and each angle of described hexagonal structure is formed concussion film anchor portion.
16. MEMS according to claim 10, is characterized in that, described MEMS also comprises the sensing opening be positioned at below described concussion film further, for realizing the sensing of pressure.
17. 1 kinds of electronic installations, comprise the MEMS that one of claim 10-16 is described.
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| US6376787B1 (en) * | 2000-08-24 | 2002-04-23 | Texas Instruments Incorporated | Microelectromechanical switch with fixed metal electrode/dielectric interface with a protective cap layer |
| CN1788999A (en) * | 2004-12-14 | 2006-06-21 | 精工爱普生株式会社 | Electrostatic actuator, droplet discharge head and method for manufacturing the droplet discharge head, droplet discharge apparatus, and device |
| CN102143906A (en) * | 2008-09-10 | 2011-08-03 | 松下电器产业株式会社 | MEMS device and method for manufacturing the same |
| CN103369441A (en) * | 2012-04-04 | 2013-10-23 | 英飞凌科技股份有限公司 | MEMS device, MEMS structure and method of making MEMS device |
| CN103731116A (en) * | 2012-10-12 | 2014-04-16 | 精工爱普生株式会社 | Vibrator, manufacturing method of vibrator, electronic apparatus, and mobile unit |
| CN103295889A (en) * | 2013-05-28 | 2013-09-11 | 上海华力微电子有限公司 | Method for manufacturing high-K metal gate in fin-shaped active area |
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