CN105453276A - Light-emitting element and manufacturing method therefor - Google Patents

Light-emitting element and manufacturing method therefor Download PDF

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Publication number
CN105453276A
CN105453276A CN201380077836.5A CN201380077836A CN105453276A CN 105453276 A CN105453276 A CN 105453276A CN 201380077836 A CN201380077836 A CN 201380077836A CN 105453276 A CN105453276 A CN 105453276A
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semiconductor laminated
laminated piece
substrate
light
area
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CN201380077836.5A
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CN105453276B (en
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黄建富
吕志强
林俊宇
邱新智
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Epistar Corp
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Epistar Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
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    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Abstract

A manufacturing method for a light-emitting element. The method comprises: providing a first substrate (201); providing a semiconductor stacked layer (202) on the first substrate, wherein the semiconductor stacked layer comprises a first conductive semiconductor layer (202a), a light-emitting layer (202b) and a second conductive semiconductor layer (202c) which are stacked successively from bottom to top, and patterning the semiconductor stacked layer to form a plurality of semiconductor stacked layer blocks (231, 232, 233, 234, 235) segmented from each other, wherein the plurality of semiconductor stacked layer blocks comprises a first semiconductor stacked layer block and a second semiconductor stacked layer block; implementing a separation step to separate the first semiconductor stacked layer block and the second semiconductor stacked layer block so as to reserve the second semiconductor stacked layer block on the first substrate; providing a permanent substrate (301) which has a first surface (301P1) and a second surface (301P2), and a third semiconductor stacked layer block is located on the first surface; and combining one of the first semiconductor stacked layer block and the second semiconductor stacked layer block onto the second surface.

Description

Light-emitting element and manufacturing method therefor
Light-emitting component and its manufacture method technical field
The present invention relates to a kind of light-emitting component and its manufacture method；More particularly to a kind of light-emitting component for having multiple semiconductor laminated piece and its manufacture method.Background technology
The superperformance such as light emitting diode (Light-Emitting Diode, LED) has low, the low heating of consuming energy, operation lifetime length, shockproof, small volume and reaction speed is fast, therefore suitable for various illuminations and show purposes.With the development of its application technology, the element of polynary (multi-cell) light emitting diode, i.e., the element of the element being made up of multiple light emitting diodes, such as array LED, application commercially is gradually extensive.For example, the illumination component of optical display, traffic sign and lighting device etc., wherein high-voltage LED (High Voltage LED, HV LED) is one.
Existing array LED element 1, as shown in Fig. 7 A and Fig. 7 B, it is arranged in two dimensions on substrate 10 comprising a substrate 10, multiple light emitting diodes 12, each light emitting diode 12 includes a luminous lamination, includes a p-type semiconductor layer 121, a luminescent layer 122 and a n-type semiconductor layer 123.These light emitting diodes 12 impose etching process to the luminous lamination on substrate 10, form groove 14 and are partitioned into this multiple light emitting diode 12.Because substrate 10 is non-conductive, therefore the groove 14 formed between multiple light emitting diodes 12 can make each light emitting diode 12 insulated from each other, light emitting diode 12 is solely carved to n-type semiconductor layer 123 by part again in addition, respectively at forming a first electrode 18 and a second electrode 16 on the exposed region and p-type semiconductor layer 121 of n-type semiconductor layer 123.The first electrode 18 and second electrode 16 of multiple light emitting diodes 12 are connected by the selectivity of conductive wires structure 19 again so that the circuit of serial or parallel connection is formed between multiple light emitting diodes 12.If for example, forming the high-voltage LED (High Voltage LED, HV LED) of the circuit, as direct current of series connection.
However, the element that such a manufacture craft is formed, usually can be because sent light be absorbed between each light emitting diode 12 each other, and cause the reduction of element overall brightness.In addition, the element that such a manufacture craft is formed, its multiple light emitting diode 12 imposes etching process to the luminous lamination in a region of same substrate, multiple light emitting diodes are partitioned into form above-mentioned groove 14, therefore element and interelement may because being formed from substrate different zones, and have interelement in optical characteristics or electrically on uniformity it is not good the problem of. The content of the invention
Purpose disclosed by the invention is to provide a kind of manufacture method of light-emitting component, including：One first substrate is provided；Semiconductor is provided to be stacked on above-mentioned first substrate, wherein it is above-mentioned it is semiconductor laminated including one first conductivity type semiconductor layer, a luminescent layer be located at above-mentioned first conductivity type semiconductor layer on and one second conductivity type semiconductor layer be located at above-mentioned luminescent layer on, and above-mentioned semiconductor laminated formation is separated through graphical multiple semiconductor laminated pieces, wherein above-mentioned multiple semiconductor laminated pieces include one first semiconductor laminated piece and one second semiconductor laminated piece；A separating step is carried out to separate above-mentioned first semiconductor laminated piece with above-mentioned first substrate, and above-mentioned first substrate remains with above-mentioned second semiconductor laminated piece；There is provided a permanent substrate with a first surface, a second surface and 1 the 3rd semiconductor laminated piece on above-mentioned first surface；And one of above-mentioned first semiconductor laminated piece and above-mentioned second semiconductor laminated piece of engagement is on above-mentioned second surface.Brief description of the drawings
Fig. 1 show the top view of a substrate used in an embodiment of the manufacture method of light-emitting component of the present invention；
Fig. 2A to Fig. 2 E show the embodiment of separation method used in the manufacture method of the light-emitting component of the present invention；
Fig. 3 A to Fig. 3 E show the first embodiment of the manufacture method of the light-emitting component of the present invention；Fig. 3 F show the fourth embodiment of the manufacture method of the light-emitting component of the present invention；
Fig. 4 show the 5th embodiment of the manufacture method of the light-emitting component of the present invention；
Fig. 5 show the sixth embodiment of the manufacture method of the light-emitting component of the present invention；
Fig. 6 (a), Fig. 6 (b) show actual measurement and the distribution scenario of a substrate used in an embodiment of the manufacture method of light-emitting component of the present invention, Fig. 6 (a) part illustrates one and distinguishes first area and second area with luminous intensity, and Fig. 6 (b) part then illustrates one and distinguishes first area and second area with dominant wavelength；
Fig. 7 A and Fig. 7 B show existing array LED element.Main element symbol description
1:Existing array LED element
10:Substrate
101:Substrate 103:Distinguish boundary line
104v, 104h:Separation path
12:Light emitting diode
121:P-type semiconductor layer
122:Luminescent layer
123:N-type semiconductor layer
131,132,133,134 and 135:Semiconductor laminated piece
14:Groove
16:Second electrode
18:First electrode
19:Conductive wires structure
201 :Substrate
202:It is semiconductor laminated
202a:First conductivity type semiconductor layer
202b:Luminescent layer
202c:Second conductivity type semiconductor layer
d:Separation path width
211 :First sacrifice layer
212:Separation path
221:First temporary substrate
231,232,233,234 and 235:Semiconductor laminated piece
23X:Semiconductor laminated piece
241:Laser
301 :Permanent substrate
301P1:First surface
301P2:Second surface
301P3:3rd surface
312B1,312B2 and 312B3:Bonding layer
320:Dielectric layer
330:Metal wire 301':Permanent substrate
301 1:First surface
301 2:Second surface
301 3:3rd surface
312'Bl:First bonding layer
312Έ2Ρ2:Second bonding layer
312Έ3:3rd bonding layer
500a, 500b and 500c:Light-emitting component
501:Permanent substrate
501a, 501b, 501c and 501d:Semiconductor laminated piece of embodiment
The top view of Fig. 1 substrates used in an embodiment of the manufacture method of light-emitting component of the present invention, there are multiple semiconductor laminated pieces on substrate 101, such as semiconductor laminated piece 131,132,133,134 and 135, these semiconductor laminated piece by semiconductor lamination (not shown) through graphically being formed, wherein graphically generally referring to the manufacture craft etched after covering photoresist and exposure imaging.Multiple separation path 104v, 104h are formed after graphical, and it is semiconductor laminated by separation path 104v, and 104h is separated into above-mentioned multiple semiconductor laminated pieces.But patterned method is not limited to this, other method, such as with the direct cutting semiconductor lamination of laser also for an embodiment.In addition, it is above-mentioned it is semiconductor laminated may grow up on the substrate 101, i.e., substrate 101 is semiconductor laminated growth substrate；It is also likely to be semiconductor laminated formed after another growth substrate, through transferring technology by semiconductor laminated transfer so far substrate 101, when this situation, semiconductor laminated (or semiconductor laminated piece) may also include a tack coat (not shown) between substrate 101.Transfer technology is existing for the personage for being familiar with this technical field, will not be described here.
It is worth noting that, in the present embodiment, above-mentioned multiple semiconductor laminated pieces in optical characteristics or electrically on it is different, therefore each semiconductor laminated piece of an optical feature value or an electrical property feature value can be measured via a measurement step is carried out, and by these semiconductor laminated piece can be divided into a first area and a second area on the substrate 101 according to the difference predetermined value of an optical feature value or electrical property feature value.Wherein optical feature value is, for example, luminous intensity or wavelength, and wavelength can be dominant wavelength (dominant wave length) or spike length (peak wave length), and electrical property feature value is, for example, forward voltage (forward voltage).In the present embodiment, it is according to the difference predetermined value of a luminous intensity, these are semiconductor laminated in measuring after each semiconductor laminated piece of luminous intensity Block is divided into a first area and a second area on the substrate 101.Luminous intensity difference predetermined value is that difference is more than or equal to 3% in this embodiment, a first area great Zhi Wei Round shapes are distinguished according to this, Ru covered Round shapes region in the differentiation boundary line 103 of Tu Zhong Round shapes, and second area then substantially surround a ring-type of above-mentioned first area, the region covered such as the ring-type of the periphery of differentiation boundary line 103 of Tu Zhong Round shapes.Semiconductor laminated piece of luminous intensity distribution wherein positioned at first area is near one another, and near one another positioned at semiconductor laminated piece of the luminous intensity distribution of second area.In the present embodiment, semiconductor laminated piece (such as semiconductor laminated piece 131 positioned at first area, 132, and 133) average canbdle power is 4400 mcd, the standard deviation of semiconductor laminated piece of luminous intensity in this region is about in 0.5 ~ 1.5mcd, and it is located at the average canbdle power of semiconductor laminated piece (such as semiconductor laminated piece 134 and 135) of second area for 4000 mcd, the standard deviation of semiconductor laminated piece of luminous intensity in this region is about in 0.5 ~ 1.5mcd;First area is about 10% ((4400-4000)/4000=10%) with semiconductor laminated piece of luminous intensity difference in second area, that is, more than or equal to 3%.
In addition to luminous intensity, in other embodiments, optical characteristics difference to distinguish first area and second area may be then that peak optical wavelength or the difference of key light wavelength are more than or equal to lnm, and the electrically different differences for then potentially including forward voltage (forward voltage) are more than or equal to 2%.Fig. 6 (a), Fig. 6 (b) show the distribution map of an actual measurement, Fig. 6 (a) part is illustrated one and distinguished with the measurement of luminous intensity (Iv), and first area and second area are distinguished according to the difference predetermined value of a luminous intensity, it is more than or equal to 3% in the difference predetermined value of this embodiment luminous intensity difference.As shown in the part of (Fig. 6 a), luminous intensity measured by each semiconductor laminated piece is with color (for GTG in figure) sign, luminous intensity values representated by each color (being GTG in figure) can refer to the sign of luminous intensity values and color (being GTG in figure) contrast relationship below, the region shown is enclosed dashed lines, it can be seen that the first area distinguished is mainly the orange for showing luminous intensity 129mcd with representing by the red (being GTG in figure) for ^ ^ luminous intensities 130mcd（By GTG in figure) constitute, and semiconductor laminated piece of luminous intensity 124mcd green (being GTG in figure) is only represented comprising minority, this first area great Zhi Wei Round shapes, average canbdle power about 129mcd, and second area is then substantially around a ring-type of above-mentioned first area, main system is constituted by semiconductor laminated piece of the green (by GTG in figure) that represents luminous intensity 124mcd, only comprising red of the minority for luminous intensity 130mcd（It is GTG in figure) and for luminous intensity 129mcd orange (being GTG in figure), the average canbdle power of this second area about 124mcd, that is, semiconductor laminated piece of luminous intensity average value of first area is big compared with semiconductor laminated piece of the luminous intensity average value positioned at second area, its difference is about 4% ((129-124)/124=4%), more than or equal to 3%.（B) part is then illustrated one and distinguished with the measurement of dominant wavelength (WLD), and according to the difference predetermined value of a dominant wavelength (WLD), it is that dominant wavelength differences predetermined value is more than or equal to lnm in this embodiment, and first area and second area are distinguished, such as Fig. 6 (b) part It is shown, distinguished first area and second area, great Zhi Wei Round shapes (are enclosed show dashed lines) in first area, average dominant wavelength about 685nm, and second area then substantially surround a ring-type of above-mentioned first area, average dominant wavelength about 683nm, wherein semiconductor laminated piece of dominant wavelength average value of first area is big compared with semiconductor laminated piece of the dominant wavelength average value positioned at second area, its difference is 2nm, more than dominant wavelength differences predetermined value lnm.
Fig. 2A to Fig. 2 E is shown as the embodiment of separation method used in the manufacture method of the light-emitting component of the present invention.As described in above-mentioned Fig. 1, in fig. 2, a substrate 201 comprising semiconductor lamination 202 thereon, this semiconductor laminated 202 include one first conductivity type semiconductor layer 202a;- luminescent layer 202b is located on the first conductivity type semiconductor layer 202a；And one second conductivity type semiconductor layer 202c be located at luminescent layer 202b on.First conductivity type semiconductor layer 202a and the second conductivity type semiconductor layer 202c are electrically different, and for example the first conductivity type semiconductor layer 202a is n-type semiconductor layer, and the second conductivity type semiconductor layer 202c is p-type semiconductor layer.First conductivity type semiconductor layer 202a, luminescent layer 202b and the second conductivity type semiconductor layer 202c are formed by Ι Π-V races material, for example, AlGaInP（AlGalnP) series material or aluminum indium gallium nitride（AlGalnN) series material.In fig. 2b, implement after foregoing patterning step, form width and be divided into multiple semiconductor laminated pieces 231,232,233 by semiconductor laminated 202 for d separation path 212,234 and 235, semiconductor laminated piece 131,132,133 corresponded respectively in Fig. 1,134 and 135, and respectively with luminous intensity as shown in Figure 1 and respectively positioned at above-mentioned first area and second area；That is, semiconductor laminated piece 231,232, and 233 first area and luminous intensity in above-mentioned Fig. 1 is 4400 mcd, and semiconductor laminated piece 234 and 235 be located at above-mentioned Fig. 1 in second area and luminous intensity be 4000 mcd, semiconductor laminated piece 231,232, and 233 with semiconductor laminated piece 234 and 235 for luminous intensity difference be more than 3%.Then, one first sacrifice layer 211 is formed on to be moved away from semiconductor laminated piece and separating step is carried out with profit, in the present embodiment, to be moved away from semiconductor laminated piece is semiconductor laminated piece 232 and 234.The formation of this first sacrifice layer 211 can first be formed on whole substrate 201 after the material of first sacrifice layer of flood 211, then optionally form at semiconductor laminated piece 232 that to be moved away from and on 234 this first sacrifice layer 211 with gold-tinted and etching process.It is worth noting that, the personage for being familiar with this technical field is also aware that, in manufacture craft sequentially, can also be first at semiconductor laminated piece 232 that to be moved away from and after this first sacrifice layer 211 is formed on 234 position, multiple semiconductor laminated pieces 231,232,233 are patterned into complete foregoing semiconductor laminated 202 with another gold-tinted and etching process again, 234, and 235 the step of.In fig. 2 c, separating step is carried out, including：One first temporary substrate 221 is provided, the first sacrifice layer 211 is engaged with the first temporary substrate 221；Afterwards, as shown in Figure 2 D, semiconductor laminated piece 232 that is intended to be moved away from and 234 separated with substrate 201.When stating step on the implementation, a laser 241 can be imposed with the interface of substrate 201 in be moved away from semiconductor laminated piece 232 and 234 and shone Penetrate, with aid in semiconductor laminated piece 232 and 234 with the separation of substrate 201.Furthermore, semiconductor laminated 202 may also be after another growth substrate be formed, it is passed to again through transfer technology on substrate 201, when this situation, also can be when semiconductor laminated 202 be passed to substrate 201, optionally on semiconductor laminated piece 232 that to be moved away from and 234 position, it is initially formed the sacrifice layer (not shown) between substrate 201, material of this sacrifice layer itself is more fragile or weaker with the engagement of substrate 201, so can be when to be moved away from semiconductor laminated piece 232 and 234 be separated with substrate 201, semiconductor laminated piece 232 that makes to be moved away from and 234 more easily separated with substrate 201.
Fig. 2 E displays are carried out after separating step, semiconductor laminated piece 232 and 234 are separated with substrate 201, and substrate 201 remains with semiconductor laminated piece 231,233 and 235.It is worth noting that, the first temporary substrate 221 and thereon semiconductor laminated piece 232 and 234, or substrate 201 and semiconductor laminated piece of 231,233 Fig. 3 A to Fig. 3 E thereon are shown as the first embodiment of the manufacture method of the light-emitting component of the present invention.First, as shown in Figure 3A there is provided a permanent substrate 301, this permanent substrate 301 at least has a first surface 301P1, a second surface 301P2, in the present embodiment, and permanent substrate 301 also has one the 3rd surface 301P3.Wherein, show as depicted in the figures, first surface 301P1 and second surface 301P2 non-co-planar.In one embodiment, this non-co-planar imposes gold-tinted and etching process and the first surface 301P1 and second surface 301P2 that form this non-co-planar via the permanent substrate for having a plane surface to a script.The material of permanent substrate 301 is, for example, glass, sapphire（A1203), or silicon (Si) substrate.
Then, as shown in Figure 3 B, semiconductor laminated piece 234 in engagement Fig. 2 E is on the first surface 301P1 of permanent substrate 301.For example when the material of permanent substrate 301 is sapphire substrate, by appropriate temperature-pressure, such as temperature is about 300 °C ~ 420 °C, and pressure is about 11000Kgf ~ 14000Kgf, and semiconductor laminated piece 234 can be made to be directly joined permanent substrate 301;This engagement is alternatively to be engaged optionally through a bonding layer 312B1, such as when the material of permanent substrate 301 is sapphire substrate, it is bonding layer 312B1 that silica, which may be selected,.Then semiconductor laminated piece 234 is separated with the first temporary substrate 221；And when implementing this step, laser irradiation (not shown) is imposed at the interface of semiconductor laminated piece 234 and the first sacrifice layer 211, to aid in the separation of semiconductor laminated piece 234 and the first sacrifice layer 211.
Then, as shown in Figure 3 C, semiconductor laminated piece 232 is engaged on the second surface 301P2 of permanent substrate 301.This engagement is similar substantially with above-mentioned semiconductor laminated piece 234 of engagement, therefore repeats no more.
As described in prior figures 2A, in one embodiment, semiconductor laminated piece 231,232,233,234, and 235 correspond to Fig. 1 in semiconductor laminated piece 131,132,133,134, and 135 and respectively have luminous intensity as shown in Figure 1, that is, semiconductor laminated piece 231,232, and 233 first area in above-mentioned Fig. 1 And average canbdle power is 4400 mcd, and semiconductor laminated piece 234 and 235 be located at above-mentioned Fig. 1 in second areas and average canbdle power be 4000 mcd, semiconductor laminated piece 231,232 and 233 with semiconductor laminated piece 234 and 235 for luminous intensity difference be more than 3%.Via the light-emitting component produced by above-described embodiment manufacture method, multiple semiconductor laminated pieces of two regions for being located in optical characteristics or having on electrical larger difference originally are allowed to be able to redistribute combination.If for example in the method described in prior art, semiconductor laminated piece 132 may be close because of position with 133 and be located substantially at the same area (please join Fig. 1 and Fig. 2 B) and an element is combined into subsequent manufacturing processes.Similarly, semiconductor laminated piece 134 with 135 because position is close and be located substantially at the same area (please join Fig. 1 and Fig. 2 B) and another element B is combined into subsequent manufacturing processes.In this way, element A will be semiconductor laminated piece of 4400 mcd comprising two average canbdle powers, and element B will be comprising semiconductor laminated piece that two average canbdle powers are 4000 mcd, and two elements luminous intensity uniformity is not good.According to via the light-emitting component produced by above-described embodiment manufacture method, such as in Fig. 3 C, have on first surface 301P1 originally in Fig. 1 average canbdle power be semiconductor laminated piece 234 of 4000 mcd second area;And have on second surface 301P2 originally in Fig. 1 average canbdle power be semiconductor laminated piece 232 of first area of 4400 mcd.Therefore be located at two regions for having larger difference in optical characteristics in (luminous intensity of such as the present embodiment) or electrical originally multiple semiconductor laminated pieces have redistributed combination.Similarly, by the manufacture method of above-described embodiment, can also obtain another element include originally in Fig. 1 average canbdle power be semiconductor laminated piece 235 of 4000 mcd second area and originally in Fig. 1 average canbdle power be semiconductor laminated piece 233 of 4400 mcd first area.Thus above-mentioned two elements have in interelement luminous intensity uniformity preferably shows.
In addition, semiconductor laminated piece 234 and 232 via being bonded to permanent substrate 301, and respectively on the first surface 301P1 and second surface 301P2 of non-co-planar, therefore the situation for being absorbed each other between each semiconductor laminated piece and sending light can be reduced, and element overall brightness is had preferable performance.
Via such as foregoing joint method, another semiconductor laminated piece of 23X can be engaged on the 3rd surface 301P3 of permanent substrate 301, as shown in Figure 3 D.Semiconductor laminated piece of 23X herein is not particularly limited, be familiar with the personage of this technical field when understand its focus on how as above-mentioned announcements makes semiconductor laminated piece to redistribute combination and in the interelement optical characteristics of each element for reaching output or electrically above uniformity has and preferably showed.Then, as shown in FIGURE 3 E, each semiconductor laminated block portion point is etched with gold-tinted and etching process to expose each semiconductor laminated piece to its first conductivity type semiconductor layer 202a, and dielectric layer 320 is formed in each semiconductor laminated piece of side wall, finally implement a metal wire forming step to form a metal wire 330 between each semiconductor laminated piece, so that each semiconductor laminated piece of electrical connection, its electrical connection can For serial or parallel connection.Metal wire 330 electrically connects one series relationship of each semiconductor laminated piece of formation as shown in FIGURE 3 E.
Although it is semiconductor laminated piece separated with substrate 201 in Fig. 2 E that the present embodiment, which illustrates and is bonded to two semiconductor laminated pieces of permanent substrate 301, but the personage of this technical field is familiar with when clear not limited to this, for example in Fig. 2 E, semiconductor laminated piece 231 is remained with substrate 201,233, and 235, in a second embodiment, can also these remain on substrate 201 semiconductor laminated pieces be bonded to permanent substrate 301.Its situation is roughly as Fig. 3 B to shown in 3E, and the first temporary substrate 221 and semiconductor laminated piece of correspondence thereon are changed to substrate 201 and thereon semiconductor laminated piece 231 only in figure, and 233, and 235, therefore be not repeated to illustrate its diagram.Therefore in this case, its engagement step is engaged for substrate 201 is aligned with permanent substrate 301, so that semiconductor laminated piece 231, and 233, or 235 be bonded on the surface to be engaged；And plate 201 and permanent substrate 301 it is remote, and make semiconductor laminated piece of engagement to be separated with substrate 201.Or in the third embodiment, these remain on substrate 201 semiconductor laminated pieces 231,233, and 235 can first be separated such as first embodiment from substrate 201 after rejoin to permanent substrate 301, in this case, the engagement of its engagement step is by semiconductor laminated piece 231,233, or 235 be engaged in one second temporary substrate and make semiconductor laminated piece 231,233, or 235 separate with substrate 201；The second temporary substrate is aligned with permanent substrate 301 again and engaged, so that semiconductor laminated piece 231,233, or 235 be bonded on the surface to be engaged；And make the second temporary substrate and permanent substrate 301 remote, and make semiconductor laminated piece of engagement to be separated with the second temporary substrate.
It is worth noting that, although semiconductor laminated piece (i.e. semiconductor laminated piece 234) that first embodiment is illustrated on the first surface 301P1 of permanent substrate 301 is derived from same semiconductor laminated 202 with semiconductor laminated piece (i.e. semiconductor laminated piece 232) on second surface 301P2, but it is not limited to this, that is, in other embodiment, semiconductor laminated piece on first surface 301P1 may originate from from semiconductor laminated piece on second surface 301P2 it is different semiconductor laminated, such as on first surface 301P1 semiconductor laminated piece is semiconductor laminated piece 234, and semiconductor laminated piece on second surface 301P2 may originate from the semiconductor laminated of another different substrate.Though again or from same semiconductor laminated, can be respectively as being engaged to above by the first temporary substrate 221 or the temporary substrate of substrate 201 or second on permanent substrate 301.
Fig. 3 F show the fourth embodiment of the present invention, and this embodiment is substantially identical with first embodiment, but the permanent substrate 301 in first embodiment is changed to permanent substrate 301 in the present embodiment,.Relative to first surface 301P1, the second surface 301P2 that permanent substrate 301 has non-co-planar, and the 3rd surface 301P3, the permanent substrate 301 of the present embodiment, first surface 301, P1, second surface 301, P2, and the 3rd surface 301, P3 is then copline, but be bonded to permanent substrate 301 at each semiconductor laminated piece, when, then reached by the bonding layer of different-thickness To making each semiconductor laminated piece not coplanar effect.That is, such as semiconductor laminated piece 234 is engaged in first surface 301 via one first bonding layer 312'Bl, on P1, second surface 301 is engaged in via one second bonding layer 312 2 for semiconductor laminated piece 232, on P2, and the first bonding layer 312'Bl and the second bonding layer 312, B2 thickness is different, so that semiconductor laminated piece 234 and semiconductor laminated piece of 232 non-co-planar.
Although it is worth noting that, illustrating multiple semiconductor laminated pieces that distinguish multiple regions on substrate because of optical feature value or electrical property feature value difference such as Fig. 1 to can be used to be engaged in first embodiment, the present invention is not limited thereto.Fig. 4 shows the fifth embodiment of the present invention, this embodiment show semiconductor laminated piece optical characteristics or electrically on not as Fig. 1 can distinguish different zones on substrate, but for multiple semiconductor laminated pieces on same substrate, still can be to it according to an optical feature value or the measurement of electrical property feature value, this semiconductor laminated piece of multiple area is ranged into a general requirements area respectively, one low specification area, and a high standard area, wherein optical feature value or electrical property feature value are that high standard area is more than general requirements area, and general requirements area is more than low specification area.By taking Fig. 4 as an example, for the result of multiple semiconductor laminated pieces of progress luminous intensity measurements on a substrate, each semiconductor laminated piece can be in being stored in board in the position on substrate and luminous intensity after measurement.Trunnion axis is luminous intensity, semiconductor laminated piece of the quantity of vertical axis then for each luminous intensity of correspondence in figure.As illustrated, a fruiting areas are low specification area, its luminous intensity average value substantially 700mcd;B fruiting areas are general requirements area, its luminous intensity average value substantially 900mcd;And c fruiting areas are high standard area, its luminous intensity average value substantially 1200mcd.And utilize the separation method such as Fig. 2 and the joint method such as Fig. 3, position that can be according to each semiconductor laminated piece be stored in board and the data of luminous intensity, select appropriate semiconductor laminated piece to be engaged on the permanent substrate 301 such as Fig. 3 A, and reach that semiconductor laminated piece is redistributed.As shown in Fig. 4 rights, if being designed with 5 semiconductor laminated piece on an element, the result then redistributed, 5 belong to general requirements area (luminous intensity average value substantially 900mcd) semiconductor laminated pieces can be selected to be engaged on the permanent substrate 301 such as Fig. 3 A, element C is formed;And another element D can then select 3 belong to low specification area (luminous intensity average value substantially 700mcd) semiconductor laminated pieces and be engaged on the permanent substrate 301 such as Fig. 3 A, and select 2 belong to high standard area (luminous intensity average value substantially 1200mcd) semiconductor laminated pieces and be engaged on same permanent substrate 301, to form element D.So, although in semiconductor laminated piece of region of production substrate diverse location in optical characteristics or electrically on have larger difference, such as in the present embodiment high person of luminous intensity, its value can the high 1200mcd for arriving high standard area, and the low person of luminous intensity, its value can the low 700mcd to low specification area, but semiconductor laminated piece is redistributed through the present embodiment, its interelement uniformity of each element of output will be improved and be controlled, element C and element D luminous intensity substantially 4500mcd.In addition, as mentioned by first embodiment, semiconductor laminated piece via being bonded to permanent substrate 301, and position respectively In the different surfaces of non-co-planar, it is possible to decrease absorb the situation for sending light between each semiconductor laminated piece each other, and element overall brightness is had preferable performance.
It is worth noting that, in various embodiments above, optical feature value or electrical property feature value can be carried out measurement and obtain to actual semiconductor laminated piece of whole or sampling property for each substrate before separating step；And in the case where manufacture craft is stable, these optical feature values or electrical property feature value also can be via obtaining a statistical value being determined in advance after a number of statistics.For example for Fig. 1 situation, in the case where manufacture craft is stable, the boundary position of first area and second area is can determine that after a number of statistics, obtain a predetermined value of the radius of first area, and the optical feature value or electrical property feature value in two regions of correspondence, without being measured one by one in the substrate to each output in the fabrication process.
As mentioned in first embodiment Fig. 3 E narration, semiconductor laminated piece engaged on permanent substrate 301 may originate from different semiconductor laminated, such as semiconductor laminated piece on first surface 301P1 may originate from the semiconductor laminated of different substrates from semiconductor laminated piece on second surface 301P2.And such application more can further apply to promote the color rendering of light-emitting component, that is, improve the CRI values of light-emitting component, its sixth embodiment of the present invention of application as shown in Fig. 5.As shown in Figure 5A, two semiconductor laminated piece of 501a and 501b are engaged on permanent substrate 501 respectively, its joint method is roughly as shown in Fig. 3 first embodiments, but two semiconductor laminated piece of 501a and 501b are isolated from the semiconductor laminated of different substrates, such as semiconductor laminated piece 501a, which is isolated from one, has luminous dominant wavelength about 620nm's to 645nm semiconductor laminated, and semiconductor laminated piece of 501b is isolated from one and has luminous dominant wavelength about 595nm's to 620nm semiconductor laminated；That is, two semiconductor laminated piece of 501a and 501b are isolated from different substrates, and semiconductor laminated piece of 501a can send the light of red dominant wavelength, and semiconductor laminated piece of 501b can send the light of orange dominant wavelength.In this way, when being engaged to permanent substrate 501 for this two semiconductor laminated pieces, can turn into the red or orange in a light-emitting component 500a, the warm white light source general to replace only has single semiconductor laminated chip；That is, this light-emitting component 500a can be used for combining with blueness and YAG fluorescent powder, the warm white light source formed is because of the light of the different dominant wavelengths with two semiconductor laminated piece of 501a and 501b, and more only having the warm white light source that single semiconductor laminated chip formed has preferably color rendering.
Or, can be as shown in Figure 5 B, except engaging two semiconductor laminated piece of 502a and 502b respectively as above-mentioned on permanent substrate 501, also directly will also it be engaged on permanent substrate 501 to semiconductor laminated piece of 502c for providing blue-light source, light-emitting component 500b thus directly forms a warm white light source, wherein three semiconductor laminated piece of 501a, 501b and 501c are isolated from the semiconductor laminated of different substrates, such as semiconductor laminated piece 501a, which is isolated from one, has luminous dominant wavelength about 620nm's to 645nm semiconductor laminated, semiconductor laminated piece 501b, which is isolated from one, has luminous dominant wavelength about 595nm's to 620nm semiconductor laminated, and semiconductor laminated piece of 501c is isolated from one and has luminous dominant wavelength about 440nm's to 460nm semiconductor laminated；That is, three semiconductor laminated piece of 501a, 501b and 501c are isolated from different substrates, and semiconductor laminated piece of 501a can send the light of red dominant wavelength, semiconductor laminated piece of 501b can send the light of orange dominant wavelength, and semiconductor laminated piece of 501c can send the light of blue dominant wavelength.
Or further, except engaging three semiconductor laminated piece of 503a respectively as above-mentioned on permanent substrate 501, can foretell at 503b and 503c sunset as shown in Figure 5 C, semiconductor laminated piece of 503d of more adjunction unifications the 4th.Wherein, four semiconductor laminated piece of 501a, 501b, 501c and 501d are isolated from the semiconductor laminated of different substrates, semiconductor laminated piece of 501a, 501b and 501c color and wavelength is as described in Fig. 5 B, and semiconductor laminated piece of 503d has luminous dominant wavelength about 510nm to 530nm, can send the light of green dominant wavelength.Due to having added the semiconductor laminated 503d of this green dominant wavelength light, the CRI values for the warm white light source that light-emitting component 500c is formed are higher compared with the light-emitting component 500b shown in Fig. 5 B, and color rendering is more preferably.
Above-described embodiment is only the principle and its effect of the illustrative present invention, not for the limitation present invention.Any persond having ordinary knowledge in the technical field of the present invention can modify and change in the case of the technical principle and spirit without prejudice to the present invention to above-described embodiment.Therefore listed by the claim of the scope of the present invention as be described hereinafter.

Claims (19)

  1. Claims
    1st, a kind of manufacture method of light-emitting component, including：
    One first substrate is provided；
    Semiconductor is provided to be stacked on the first substrate, wherein this it is semiconductor laminated including one first conductivity type semiconductor layer, a luminescent layer be located at first conductivity type semiconductor layer on and one second conductivity type semiconductor layer be located at the luminescent layer on, and semiconductor laminated formation is separated through graphical multiple semiconductor laminated pieces, wherein the plurality of semiconductor laminated piece includes one first semiconductor laminated piece and one second semiconductor laminated piece；
    A separating step is carried out to separate this first semiconductor laminated piece with the first substrate, and the first substrate remains with this second semiconductor laminated piece；
    There is provided a permanent substrate with a first surface, a second surface and 1 the 3rd semiconductor laminated piece on the first surface；And
    This first semiconductor laminated piece and this one of second semiconductor laminated piece is engaged on the second surface.
    2nd, the manufacture method of light-emitting component as claimed in claim 1, wherein engaged this first semiconductor laminated piece and this one of second semiconductor laminated piece is more than or equal to lnm with the 3rd semiconductor laminated piece of dominant wavelength differences.
    3rd, the manufacture method of light-emitting component as claimed in claim 1, wherein engaged this first semiconductor laminated piece and one of the second semiconductor laminated piece forward voltage with the 3rd semiconductor laminated piece
    (forward voltage) difference is more than or equal to 2%
    4th, the manufacture method of light-emitting component as claimed in claim 1, wherein engaged this first semiconductor laminated piece and this one of second semiconductor laminated piece is more than or equal to 3% with the 3rd semiconductor laminated piece of luminous intensity difference.
    5th, the manufacture method of light-emitting component as claimed in claim 1, the wherein separating step include：One first sacrifice layer is formed on this first semiconductor laminated piece；
    One temporary substrate is provided；
    Engage the temporary substrate and first sacrifice layer；And
    This first semiconductor laminated piece is separated from the first substrate. 6th, the manufacture method of light-emitting component as claimed in claim 1, including engaging this second semiconductor laminated piece in the permanent substrate, the engagement step includes：
    Contraposition engages the first substrate and the permanent substrate, so that this second semiconductor laminated piece is engaged on the second surface；And
    This second semiconductor laminated piece is separated from the first substrate.
    7th, the manufacture method of light-emitting component as claimed in claim 1, including engaging this second semiconductor laminated piece in the permanent substrate, the engagement step includes：
    One temporary substrate is provided；
    This second semiconductor laminated piece is engaged in the temporary substrate；
    This second semiconductor laminated piece is separated from the first substrate；
    Contraposition engages the temporary substrate and the permanent substrate, so that this second semiconductor laminated piece is engaged on the second surface；And
    This second semiconductor laminated piece is separated from the temporary substrate.
    8th, the manufacture method of the light-emitting component as described in claim the 1, wherein second surface and the first surface be not in same level.
    9th, the manufacture method of light-emitting component as claimed in claim 1, in addition to a gold-tinted is imposed to the permanent substrate and manufacture craft is solely carved so that the second surface and the first surface be not in same level.
    10th, the manufacture method of light-emitting component as claimed in claim 1, wherein the 3rd semiconductor laminated piece is engaged on the first surface via one first bonding layer, engaged this first semiconductor laminated piece and this one of second semiconductor laminated piece is engaged on the second surface via one second bonding layer, and first bonding layer is different from the thickness of second bonding layer.
    11st, the manufacture method of light-emitting component as claimed in claim 1, wherein the plurality of semiconductor laminated piece is distinguished into a first area and a second area, wherein first area great Zhi Wei Round shapes, and the second area is substantially around a ring-type of the first area.
    12nd, the manufacture method of light-emitting component as claimed in claim 11, wherein engaged this first semiconductor laminated piece and this one of second semiconductor laminated piece is located at the first area, and the 3rd semiconductor laminated piece is isolated from the second area and is engaged on the permanent substrate.
    13rd, the manufacture method of light-emitting component as claimed in claim 11, also it is included in before the separating step, a measurement step is carried out to measure each the plurality of semiconductor laminated piece of an optical feature value or an electrical property feature value, and the first area and the second area are determined according to the difference predetermined value of the optical feature value or the electrical property feature value. 14th, the manufacture method of light-emitting component as claimed in claim 11, in addition to via a predetermined value of the Radius that the first area is obtained after statistics.
    15th, the manufacture method of light-emitting component as claimed in claim 1, in addition to this first semiconductor laminated piece and this one of second semiconductor laminated piece and the 3rd semiconductor laminated piece that formation one metal wire electrical connection is engaged.
    16th, the manufacture method of light-emitting component as claimed in claim 15, wherein engaged this first semiconductor laminated piece and this one of second semiconductor laminated piece is serial or parallel connection with the 3rd semiconductor laminated piece.
    17th, the manufacture method of light-emitting component as claimed in claim 1, wherein the 3rd semiconductor laminated piece is isolated from one the 3rd substrate and is engaged on the permanent substrate.
    18th, the manufacture method of light-emitting component as claimed in claim 17, wherein engaged this first semiconductor laminated piece and this one of second semiconductor laminated piece sends dominant wavelength about 595nm to 620nm light, and the light that the 3rd semiconductor laminated piece sends dominant wavelength about 620nm to 645nm.
    19th, the manufacture method of light-emitting component as claimed in claim 1, in addition to：According to each semiconductor laminated piece the plurality of of optical feature value or an electrical property feature value general requirements area is divided into by the plurality of semiconductor laminated piece, low specification area, and high standard area, and semiconductor laminated piece optical feature value or the electrical property feature value positioned at the high standard area are more than semiconductor laminated piece optical feature value or the electrical property feature value positioned at the general requirements area, and semiconductor laminated piece optical feature value or the electrical property feature value positioned at the general requirements area are more than semiconductor laminated piece optical feature value or the electrical property feature value positioned at the low specification area.
    20th, the manufacture method of light-emitting component as claimed in claim 19, wherein the 3rd semiconductor laminated piece is isolated from the first substrate, and close this first semiconductor laminated piece and this one of second semiconductor laminated piece of bark graft is selected from one of the low specification area and high standard area, and the 3rd semiconductor laminated piece selected from another.
    21st, the manufacture method of light-emitting component as claimed in claim 19, wherein the 3rd semiconductor laminated piece is isolated from the first substrate, and this first semiconductor laminated piece and this one of second semiconductor laminated piece be engaged is selected from the general requirements area with the 3rd semiconductor laminated piece.
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