CN105551910A - Field electron emission cathode array based on molybdenum substrate and preparation method thereof - Google Patents
Field electron emission cathode array based on molybdenum substrate and preparation method thereof Download PDFInfo
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- CN105551910A CN105551910A CN201610025572.4A CN201610025572A CN105551910A CN 105551910 A CN105551910 A CN 105551910A CN 201610025572 A CN201610025572 A CN 201610025572A CN 105551910 A CN105551910 A CN 105551910A
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- metal molybdenum
- insulating barrier
- molybdenum
- substrate
- etch mask
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
Abstract
The invention discloses a field electron emission cathode array based on a molybdenum substrate and a preparation method thereof. According to the invention, an etching mask is firstly formed on a molybdenum substrate; then high density plasma dry etching is carried out to the molybdenum substrate to form molybdenum pointed cones. The molybdenum pointed cones are directly formed on the substrate; the problem of poor adhesion with underlay is thoroughly solved; heavy current and strong electric field can be borne; high rate isotropic etching is carried out to the molybdenum body material through the high density plasma dry etching method; therefore large area appearance accordant molybdenum pointed cone arrays can be obtained at the same time; large area even emission can be realized; only primary etching is contained in the manufacturing process of the field electron emission cathode array; the pointed cone centers and gate hole centers are automatically aligned without deflection; compared with the prior art, the technical solution of the invention is featured by few procedures, high efficiency, simplicity and low cost and is applicable to large scale preparation.
Description
Technical field
The present invention relates to vacuum microelectronics field, more specifically relate to a kind of Field Electron Emission cathode array based on metal molybdenum substrate and preparation method thereof.
Background technology
Along with developing rapidly of electric vacuum technology, micro-nano technology technology, micro-electromechanical system (MEMS) technology and surface mounting technology, in the world various different subject is merged, define vacuum microelectronics gradually.Field Electron Emission wherein carrys out oppressive emitting surface potential barrier by outside highfield, makes the height reduction of potential barrier, narrowed width, make interior of articles free electron enter vacuum by tunnel effect, and then obtain the ionic current of high monatomic ion ratio.Field-transmitting cathode does not need external energy, can realize instantaneous starting, can reach very high current density in theory, have development potentiality.The hot cathode in traditional vacuum electronic device is substituted with Field Electron Emission negative electrode, such as Field Electron Emission negative electrode is applied in the scenes such as microwave device, camera display part, transducer, mass spectral analysis use ion source, vacuum field transistor, vacuum integrated circuit, novel light-emitting light source, vacuum high-voltage switch, X-ray tube or THz devices, more excellent performance can be obtained, there is very important scientific meaning and using value.
Field Electron Emission can be divided into most advanced and sophisticated outer Field Electron Emission in form, Field Electron Emission in dielectric film (dielectric coated) interior Field Electron Emission and semiconductor.The voltage that wherein most advanced and sophisticated outer Field Electron Emission need not be very high just can obtain high electric field at most advanced and sophisticated place, is therefore favored widely.At present, micro-nano technology technology is utilized to obtain most advanced and sophisticated outer Field Electron Emission cold cathode array both at home and abroad, wherein typical with metallic cathode.Metallic cathode is the Field Electron Emission negative electrode relying on modern micro Process means to make the earliest, the metallic cathode extraction voltage utilizing micro fabrication to make is low, emissivities are strong, substantially screen effect is not had to affect between arrayed emitters, very high current density and total current can be realized, and reliability of material is high, there is great competitiveness.
The Spindt process of people's exploitations such as the Spindt of Stamford prepares the classical way of metallic cathode, and the method adopts multilayer film, photoetching, etching and angle evaporation technique on silicon chip, form molybdenum pointed cone array.When evaporating molybdenum pointed cone, substrate is vertical with evaporation beam direction, and at the uniform velocity rotates with certain speed, and in evaporation process, grid hole constantly reduces, until finally close, makes emitter become cone from round platform.Due to the pointed cone that Spindt technique is evaporation formation on a silicon substrate, make the adhesiveness of pointed cone and substrate poor.Spindt technique cannot ensure the high level of homogeneity of molybdenum pointed cone pattern simultaneously, thus cannot ensure large-area uniform emission.In addition, the method complex process, cost is high.The adhesiveness of metallic cathode pointed cone and substrate, the uniform and stable property of Flied emission and processed complex degree (i.e. cost) become its key factor further developed of restriction.
Summary of the invention
(1) technical problem that will solve
The technical problem to be solved in the present invention how to solve metallic cathode and substrate adhesion is poor, metallic cathode is launched uneven and makes complicated problem.
(2) technical scheme
In order to solve the problems of the technologies described above, the invention provides a kind of manufacture method of the Field Electron Emission cathode array based on metal molybdenum substrate, said method comprising the steps of:
Metal molybdenum substrate forms etch mask, and utilizes described etch mask to carry out high density gas ions dry etching to described metal molybdenum substrate, form metal molybdenum pointed cone, afterwards the described etch mask on the tip of described metal molybdenum pointed cone is removed; Wherein said etch mask comprises the grid layer being formed in the suprabasil insulating barrier of described metal molybdenum and being formed on described insulating barrier.
Preferably, describedly in metal molybdenum substrate, form etch mask comprise the following steps:
Described metal molybdenum substrate deposits described insulating barrier;
Described insulating barrier deposits described grid layer;
Spin coating photoresist on described grid layer, and the photoetching offset plate figure that image conversion process forms grid array structure is carried out to described photoresist;
Etch away the described insulating barrier without photoresist region and grid layer;
Remove described photoetching offset plate figure, form the described etch mask comprising described insulating barrier and grid layer.
Preferably, described insulating barrier is etched away and described grid layer utilizes the method for reactive ion etching to etch.
Preferably, described insulating barrier is silicon dioxide layer, silicon nitride layer or the layer structure comprising silicon dioxide layer and silicon nitride layer, and thickness is 0.1 micron to 5 microns.
Preferably, before metal molybdenum substrate forms etch mask, described method also comprises the step of described metal molybdenum substrate being carried out to polishing both surfaces.
Preferably, the material of described grid layer is Al, AlN, Ni, Cu or Ti, and thickness is greater than 0.1 micron.
Preferably, described high density gas ions dry etching is sense coupling or transformer coupled plasma etching.
Preferably, the etching parameters of described transformer coupled plasma etching is:
Coil power for generation of transformer coupled plasma is 100 watts to 2000 watts;
Platen power for increasing energy of plasma is 10 watts to 200 watts;
Bottom electrode pallet set temperature≤50 DEG C; Cavity air pressure≤50mTorr;
Etching gas is SF
6or SF
6, O
2and Cl
2the mist of composition, total gas flow rate is 10sccm to 200sccm.
Said method is applicable to a kind of preparation of the Field Electron Emission cathode array based on metal molybdenum substrate, and this array comprises consistent appearance and regularly arranged metal molybdenum pointed cone and be positioned at several etch mask of presumptive area; Wherein said etch mask comprises the grid layer being formed in the suprabasil insulating barrier of described metal molybdenum and being formed on described insulating barrier, and described presumptive area is the top of the non-tip of described metal molybdenum pointed cone.
Molybdenum pointed cone non-equidistant arrangement described in each.
(3) beneficial effect
The invention provides a kind of Field Electron Emission cathode array based on metal molybdenum substrate and preparation method thereof, first the present invention forms etch mask in metal molybdenum substrate, etch mask is utilized to carry out high density gas ions dry etching to metal molybdenum substrate afterwards, form metal molybdenum pointed cone, the present invention by directly forming molybdenum pointed cone compared with existing Spindt technique in substrate, thoroughly solve the problem of substrate adhesion difference, big current and highfield can be born.Two-forty, the isotropic etching to metal molybdenum body material can be realized by high density gas ions dry etching method, thus the molybdenum pointed cone array of large area consistent appearance can be obtained simultaneously, be beneficial to and realize large-area uniform emission, increase overall molybdenum pointed cone array field and send a telegraph emission current.Etch mask of the present invention comprises the grid layer being formed in the suprabasil insulating barrier of metal molybdenum and being formed on the insulating layer, can according to the application demand of actual field emitting cathode when making, by regulating insulating layer deposition parameter change thickness of insulating layer, thus control the distance of molybdenum pointed cone top and grid.Also can by regulating the optimization molybdenum pointed cone pattern of high density gas ions dry etch process parameter, therefore technical scheme of the present invention can realize controlling molybdenum pointed cone pattern flexibly and effectively, and technique is practical.In addition, in the manufacture craft of Field Electron Emission cathode array of the present invention, only comprise a photoetching, achieve the zero deflection autoregistration at pointed cone center and gate hole center.Compared with the prior art, technical scheme operation of the present invention is few, has feature that is efficient, simple and low cost, is applicable to extensive preparation.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the flow chart of the manufacture method of the Field Electron Emission cathode array based on metal molybdenum substrate of the present invention;
Fig. 2 A, 2B are the structural representations of the Field Electron Emission cathode array based on metal molybdenum substrate of the present invention;
Fig. 3 is the scanning electron microscope diagram of the Field Electron Emission cathode array based on metal molybdenum substrate of the present invention;
Fig. 4 is the flow chart making the Field Electron Emission cathode array based on metal molybdenum substrate of the present invention.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in further detail.Following examples for illustration of the present invention, but can not be used for limiting the scope of the invention.
The invention discloses a kind of manufacture method of the Field Electron Emission cathode array based on metal molybdenum substrate, as shown in Figure 1, the method comprises the following steps:
S1, in metal molybdenum substrate, form etch mask, and utilize described etch mask to carry out high density gas ions dry etching to described metal molybdenum substrate, form metal molybdenum pointed cone; Wherein said etch mask comprises the grid layer being formed in the suprabasil insulating barrier of described metal molybdenum and being formed on described insulating barrier;
S2, the described etch mask on the tip of described metal molybdenum pointed cone to be removed.
The present invention, by directly forming molybdenum pointed cone in substrate compared with existing Spindt technique, thoroughly solves the problem of substrate adhesion difference, can bear big current and highfield.Two-forty, the isotropic etching to metal molybdenum body material can be realized by high density gas ions dry etching method, thus the molybdenum pointed cone array of large area consistent appearance can be obtained simultaneously, be beneficial to and realize large-area uniform emission, increase overall molybdenum pointed cone array field and send a telegraph emission current.
Further, above-mentionedly in metal molybdenum substrate, form etch mask comprise the following steps:
S11, in described metal molybdenum substrate, deposit described insulating barrier;
S12, on described insulating barrier, deposit described grid layer;
S13, on described grid layer spin coating photoresist, and the photoetching offset plate figure that image conversion process forms grid array structure is carried out to described photoresist; Preferably, the method for photoetching is adopted to carry out image conversion process to described photoresist;
S14, etch away described insulating barrier without photoresist region and grid layer; The method of reactive ion etching is preferably utilized to etch;
S15, remove described photoetching offset plate figure, form the described etch mask comprising described insulating barrier and grid layer.
Etch mask of the present invention comprises insulating barrier and grid layer, according to the application demand of actual field emitting cathode, by regulating insulating layer deposition parameter change thickness of insulating layer, thus can control the distance of molybdenum pointed cone top and grid when making.In addition, also by regulating the optimization molybdenum pointed cone pattern of high density gas ions dry etch process parameter, therefore the present invention can realize controlling molybdenum pointed cone pattern flexibly and effectively, and technique is practical.
In the manufacture craft of Field Electron Emission cathode array, only comprise a photoetching, achieve the zero deflection autoregistration at pointed cone center and gate hole center.Compared with the prior art, technical scheme operation of the present invention is few, has feature that is efficient, simple and low cost, is applicable to extensive preparation.
Further, the material of described insulating barrier is the inorganic matter such as silicon dioxide and silicon nitride and combination thereof, or can to say edge layer definitive be silicon dioxide layer, silicon nitride layer or comprise silicon dioxide layer and the two-layer layer structure of silicon nitride layer, thickness is 0.1 micron to 5 microns, and the method using plasma of growth insulating barrier strengthens chemical vapour deposition (CVD).The material of described grid layer is Al, AlN, Ni, Cu or Ti, and thickness is greater than 0.1 micron.The method of growth grid layer adopts physical vapour deposition (PVD) or chemical vapour deposition (CVD) etc.
Further, described high density gas ions dry etching is sense coupling or transformer coupled plasma etching.The etching parameters of wherein said transformer coupled plasma etching is: the coil power for generation of transformer coupled plasma is 100 watts to 2000 watts; Platen power for increasing energy of plasma is 10 watts to 200 watts; Bottom electrode pallet set temperature≤50 DEG C; Cavity air pressure≤50mTorr; Etching gas is SF
6, gas flow is 10sccm to 200sccm.
Sense coupling design parameter is: the coil power for generation of inductively coupled plasma is 100 to 2000 watts; Radio-frequency power for increasing energy of plasma is 10 to 100 watts; Bottom electrode pallet set temperature≤50 DEG C; Cavity air pressure≤100mTorr; Structure etching gas is SF
6, gas flow is 10sccm to 200sccm.
Above-specified high density gas ions dry etching can produce high density, high energy ion and free radical, etch rate can reach more than 0.5 micrometers per minutes, achieve the two-forty to metal molybdenum body material, isotropic etching, thus the molybdenum pointed cone array of large area consistent appearance can be obtained simultaneously, be beneficial to and realize large-area uniform emission, increase overall molybdenum pointed cone array field and send a telegraph emission current.
Below by a specific embodiment, method of the present invention is described in detail.
1, as shown in (a) in Fig. 4, on the molybdenum sheet of twin polishing, utilize the method deposition layer of silicon dioxide of plasma enhanced chemical vapor deposition as insulating barrier, thickness is 0.3 micron.
2, as shown in (b) in Fig. 4, silicon dioxide insulating layer sputters thickness be 1 micron aluminium as grid layer and pointed cone etching mask.
3, as shown in (c) in Fig. 4, the etch mask of grid structure after spin coating photoresist, is graphically formed.
4, as shown in (d) in Fig. 4, utilize the method for reactive ion etching to etch aluminium and silicon dioxide respectively, namely etch away grid layer and insulating barrier.
5, as shown in (e) in Fig. 4, the method for inductively coupled plasma (ICP) isotropic etching is adopted in molybdenum substrate, to form molybdenum pointed cone as emitter.Concrete technology parameter is: ICP power is 500 watts; RF is 10 watts; Etching gas is SF
6, gas flow is 20sccm, and etching temperature is at about 30 DEG C.
6, as shown in (f) in Fig. 4, the structural mask of pointed cone is removed in ultrasonic cleaning.
Fig. 3 is the electron scanning micrograph of the cathode array utilizing the parameter of the present embodiment to manufacture, its morphological consistency is high, the zero deflection being achieved pointed cone center and gate hole center by self aligned preparation method is aimed at, compared with the prior art, thoroughly solve the problem of substrate adhesion, have very strong Technological adaptability strong, preparation method's operation is few, there is feature that is efficient, simple and low cost, be applicable to extensive preparation.
A kind of Field Electron Emission cathode array based on metal molybdenum substrate is the invention also discloses corresponding to said method, as shown in Fig. 2 A, 2B, Field Electron Emission cathode array comprises consistent appearance and regularly arranged metal molybdenum pointed cone 1 and be positioned at several etch mask of presumptive area; Wherein said etch mask comprises the insulating barrier 3 be formed in described metal molybdenum substrate 4 and the grid layer 2 be formed on described insulating barrier, and described presumptive area is the top of the non-tip of described metal molybdenum pointed cone.
Molybdenum pointed cone 1 described in each can equidistant arrangement, also can non-equidistant arrangement.It is specifically intended that due to the restriction of many factors, the molybdenum pointed cone array utilizing prior art to be formed great majority are the structure of equidistant arrangement, and method provided by the invention can form the molybdenum pointed cone array of non-equidistant arrangement.In embodiment, the spacing between adjacent molybdenum pointed cone tip is preferably 15 microns.Single molybdenum pointed cone height is preferably 6 microns, and bottom surface radius is preferably 2.5 microns.
Utilize the manufacture method of Field Electron Emission cathode array of the present invention can obtain Field Electron Emission cathode array of the present invention.Therefore the content identical with the manufacture method of Field Electron Emission cathode array for Field Electron Emission cathode array no longer repeats.
The invention provides a kind of autoregistration Field Electron Emission cathode array based on metal molybdenum substrate and preparation method thereof, the present invention utilizes advanced micro-nano technology manufacture technics to go out the Field Electron Emission cathode array of the homogeneous band grid structure of pattern, make it for conventional metals negative electrode poor adhesion, the uniform and stable property of Flied emission is low, and processed complex degree and high in cost of production problem have obvious improvement.
Above execution mode is only for illustration of the present invention, but not limitation of the present invention.Although with reference to embodiment to invention has been detailed description, those of ordinary skill in the art is to be understood that, various combination, amendment or equivalent replacement are carried out to technical scheme of the present invention, do not depart from the spirit and scope of technical solution of the present invention, all should be encompassed in the middle of right of the present invention.
Claims (10)
1., based on a manufacture method for the Field Electron Emission cathode array of metal molybdenum substrate, it is characterized in that, said method comprising the steps of:
Metal molybdenum substrate forms etch mask, and utilizes described etch mask to carry out high density gas ions dry etching to described metal molybdenum substrate, form metal molybdenum pointed cone, afterwards the described etch mask on the tip of described metal molybdenum pointed cone is removed; Wherein said etch mask comprises the grid layer being formed in the suprabasil insulating barrier of described metal molybdenum and being formed on described insulating barrier.
2. manufacture method according to claim 1, is characterized in that, describedly in metal molybdenum substrate, forms etch mask comprise the following steps:
Described metal molybdenum substrate deposits described insulating barrier;
Described insulating barrier deposits described grid layer;
Spin coating photoresist on described grid layer, and the photoetching offset plate figure that image conversion process forms grid array structure is carried out to described photoresist;
Etch away the described insulating barrier without photoresist region and grid layer;
Remove described photoetching offset plate figure, form the described etch mask comprising described insulating barrier and grid layer.
3. manufacture method according to claim 2, is characterized in that, etches away described insulating barrier and described grid layer utilizes the method for reactive ion etching to etch.
4. manufacture method according to claim 1, is characterized in that, described insulating barrier is silicon dioxide layer, silicon nitride layer or the layer structure comprising silicon dioxide layer and silicon nitride layer, and thickness is 0.1 micron to 5 microns.
5. manufacture method according to claim 1, is characterized in that, before metal molybdenum substrate forms etch mask, described method also comprises the step of described metal molybdenum substrate being carried out to polishing both surfaces.
6. manufacture method according to claim 1, is characterized in that, the material of described grid layer is Al, AlN, Ni, Cu or Ti, and thickness is greater than 0.1 micron.
7. manufacture method according to claim 1, is characterized in that, described high density gas ions dry etching is sense coupling or transformer coupled plasma etching.
8. manufacture method according to claim 1, is characterized in that, the etching parameters of described transformer coupled plasma etching is:
Coil power for generation of transformer coupled plasma is 100 watts to 2000 watts;
Platen power for increasing energy of plasma is 10 watts to 200 watts;
Bottom electrode pallet set temperature≤50 DEG C; Cavity air pressure≤50mTorr;
Etching gas is SF
6or SF
6, O
2and Cl
2the mist of composition, total gas flow rate is 10sccm to 200sccm.
9. based on a Field Electron Emission cathode array for metal molybdenum substrate, it is characterized in that, comprise consistent appearance and regularly arranged metal molybdenum pointed cone and be positioned at several etch mask of presumptive area; Wherein said etch mask comprises the grid layer being formed in the suprabasil insulating barrier of described metal molybdenum and being formed on described insulating barrier, and described presumptive area is the top of the non-tip of described metal molybdenum pointed cone.
10. Field Electron Emission cathode array according to claim 9, is characterized in that, molybdenum pointed cone non-equidistant arrangement described in each.
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| CN201610025572.4A CN105551910B (en) | 2016-01-14 | 2016-01-14 | Field Electron Emission cathode array and preparation method thereof based on metal molybdenum substrate |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113675057A (en) * | 2021-07-12 | 2021-11-19 | 郑州大学 | Self-aligned graphene field emission gate structure and preparation method thereof |
| CN114203500A (en) * | 2021-11-29 | 2022-03-18 | 北京航空航天大学 | Method for producing emitter base assembly, emitter base assembly and electron gun |
| CN116598200A (en) * | 2023-07-18 | 2023-08-15 | 江苏鲁汶仪器股份有限公司 | Etching method of Mo-based metal film |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113675057A (en) * | 2021-07-12 | 2021-11-19 | 郑州大学 | Self-aligned graphene field emission gate structure and preparation method thereof |
| CN113675057B (en) * | 2021-07-12 | 2023-11-03 | 郑州大学 | Self-aligned graphene field emission grid structure and preparation method thereof |
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