CN105606158A - Force/magnetism multifunctional sensor - Google Patents
Force/magnetism multifunctional sensor Download PDFInfo
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- CN105606158A CN105606158A CN201610150468.8A CN201610150468A CN105606158A CN 105606158 A CN105606158 A CN 105606158A CN 201610150468 A CN201610150468 A CN 201610150468A CN 105606158 A CN105606158 A CN 105606158A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
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Abstract
The invention discloses a force/magnetism multifunctional sensor. The force/magnetism multifunctional sensor includes a first cantilever beam 1 for detecting an applied magnetic field, a magnetic material 3 at the top end of the cantilever beam, a second cantilever beam 2 for detecting the applied force, a silicon mass block 4 at the top end of the cantilever beam, a first Wheatstone bridge which is formed by a first thin film transistor TFT1 channel equivalent resistor R1, a second thin film transistor TFT2 channel equivalent resistor R2, a third thin film transistor TFT3 channel equivalent resistor R3 and a fourth thin film transistor TFT4 channel equivalent resistor R4 and is used for realizing detection of a magnetic field, and a second Wheatstone bridge which is formed by a fifth thin film transistor TFT1' channel equivalent resistor R1', a sixth thin film transistor TFT2' channel equivalent resistor R2', a seventh thin film transistor TFT3' channel equivalent resistor R3' and an eighth thin film transistor TFT4' channel equivalent resistor R4' and is used for realizing detection of force. The force/magnetism multifunctional sensor has the advantages of being small in volume, being low in cost, being high in accuracy, and being high in stability.
Description
Technical field
The present invention relates to sensor technical field, especially relate to a kind of power/magnetic multi-functionalIntegrated sensor.
Background technology
Along with developing rapidly of science and technology, sensor technology is extremely paid attention to, but singleOne physical quantity transducer can not meet the field such as industrial production, Aero-Space, forCan accurately the multiple physical quantitys of environment be changed and be detected simultaneously, at a chipThe sensing element of upper integrated several functions can be measured multiple physical quantitys simultaneously, this kind of power/Magnetic Multifunction Sensor has the advantages such as volume is little, lightweight and integrated.
What the patent No. was that CN201420085249.2 utility model relates to is a kind of temperatureDegree, humidity, air pressure integrated sensor, comprise a circuit board, on circuit board, is provided withTemperature sensor, humidity sensor, signal processing circuit, temperature sensor, humidityThe output of sensor and pressure sensor is all connected with the input of signal processing circuitConnect, signal processing circuit and circuit board are integrally formed formula signal processing circuit board, pressureWhat sensor adopted is vacuum piezoresistive pressure sensor, and what humidity sensor adopted isPlatinum resistance temperature sensor, what humidity sensor adopted is Humidity-Sensitive Capacitance Sensor, trueEmpty piezoresistive pressure sensor, platinum resistance temperature sensor, Humidity-Sensitive Capacitance Sensor collectionBecome on integral type signal processing circuit board. This utility model has reduced outer bound pair sensingThe impact of device signal, has improved stability, has reduced production cost, can extensive useIn environmental monitoring, meteorologic survey, intelligent building, Aero-Space, military project, petrochemical industry,Numerous industries such as oil well, electric power, boats and ships, pipeline.
The patent No. is the disclosure of the invention one and CMOS work of CN201310117126.2MEMS temperature humidity integrated sensor and the manufacture method thereof of skill compatibility. This invention is carriedFor a kind of temperature humidity integrated sensor, it comprises base material, be formed on base material absolutelyEdge layer, be formed at bottom electrode on insulating barrier, be formed at the intermediate moisture on bottom electrodeSensing layer and be formed at the top electrode on intermediate moisture sensing layer, wherein bottom electrode is adoptedUse the thermocouple being formed by N-type polysilicon/aluminium or N-type polysilicon/P type polysiliconMeasure temperature. The humiture integrated sensor of this invention, bottom electrode adopts Al and polycrystallineSilicon forms thermocouple, and this is CMOS compatible technology, can circulate with CMOS simultaneously,Easily manufactured.
It is a kind of passive that the patent No. is that the patent of invention of CN201210498929.2 disclosesWireless temperature, humidity integrated sensor, adopt cantilever beam capacitive temperature sensor and forkRefer to capacitance type humidity sensor, comprise from bottom to up the Semiconductor substrate that connects successively,Lower dielectric layer, lower metal layer, middle dielectric layer, intermediate metal layer, upper dielectric layer,And be positioned at upper metal interconnecting wires and the humidity-sensitive material of dielectric layer upper surface. This inventionCantilever capacitive temperature sensor-inductor loop and interdigital capacitor humidity sensor-electricityThe frequency division work of sense loop, wireless measurement temperature, humidity, can be applied to airtight simultaneouslyMeasurement and the collection of temperature, two kinds of parameters of humidity under environment or mal-condition. This inventionSensor adopts the preparation of CMOSMEMS technique, has good performance and lowerCost.
The patent No. is that the patent of invention of CN201210451111.5 discloses a kind of temperaturePressure integrated sensor, comprises temperature sensor, binding circuit board, temperature sensorMounting groove, pressure element, pressure seat, pressure inlet port and wire, is characterized in that:Pressure inlet port is positioned at the lower end of pressure seat, and binding circuit board is positioned at the upper end of pressure seat,Binding circuit board is close to the end face of pressure seat, and temperature sensor is arranged on TEMPIn device mounting groove and be close to pressure seat, the heat of measured medium conducts to by pressure seatTemperature sensor, temperature sensor is connected and carries out letter with binding circuit board by wireNumber transmission. What temperature sensor was close in this invention is arranged on the stainless of pressure sensorSteel seat top or side, by measuring the stainless temperature as medium heat conduction carrierDegree obtains the temperature of medium. This structure is easy for installation, easy to use, for oil,Chemical industry, food, refrigerating and air conditioning industry provide a kind of novel temperature, pressure integrated biographySensor.
Summary of the invention
In order to address the above problem, the inventor has carried out research with keen determination, designs onePlant and can detect power and magnetic field Multifunction Sensor simultaneously, thereby completed the present invention.
Specifically, the object of the present invention is to provide following aspect:
(1) power/magnetic Multifunction Sensor, wherein, this sensor comprises:
Be used for detecting the first cantilever beam 1 of externally-applied magnetic field, and
Be used for detecting the second cantilever beam 2 of applied force.
(2) according to the Multifunction Sensor described in above-mentioned 1, wherein,
Described the first cantilever beam 1 is silicon cantilever, comprises (preferably root is made) fourIndividual thin film transistor (TFT) is the first film transistor T FT1, the second thin film transistor (TFT)TFT2, the 3rd thin film transistor (TFT) TFT3 and the 4th thin film transistor (TFT) TFT4, its topFor free end, preferred fabrication is magnetic material; And/or
Described the second cantilever beam 2 is silicon cantilever, comprises (preferably root is made) fourIndividual thin film transistor (TFT), the 5th thin film transistor (TFT) TFT1 ', the 6th thin film transistor (TFT)TFT2 ', the 7th thin film transistor (TFT) TFT3 ' and the 8th thin film transistor (TFT) TFT4 ', itsTop is free end, the integrated siliceous gauge block of preferred fabrication, more preferably non-magnetic material.
(3) according to the Multifunction Sensor described in above-mentioned 1 or 2, wherein,
Described the first film transistor T FT1 raceway groove equivalent resistance R1, the second film crystalline substanceBody pipe TFT2 raceway groove equivalent resistance R2, the 3rd thin film transistor (TFT) TFT3 raceway groove equivalent electricResistance R3With the 4th thin film transistor (TFT) TFT4 raceway groove equivalent resistance R4, preferred described equivalenceResistance R1, equivalent resistance R2, equivalent resistance R3With equivalent resistance R4Form the first favour thisEnergising bridge; And/or
Described the 5th thin film transistor (TFT) TFT1 ' raceway groove equivalent resistance R1', the 6th film crystalline substanceBody pipe TFT2 ' raceway groove equivalent resistance R2', the 7th thin film transistor (TFT) TFT3 ' raceway groove equivalenceResistance R3' and the 8th thin film transistor (TFT) TFT4 ' raceway groove equivalent resistance R4', preferably described inRaceway groove equivalent resistance R1', equivalent resistance R2', raceway groove equivalent resistance R3' and raceway groove equivalenceResistance R4' formation the second Wheatstone bridge.
(4) according to the Multifunction Sensor described in above-mentioned 3, wherein,
Described equivalent resistance R1With described equivalent resistance R2Series winding, forms the first output electricityPress Vout1; And/or
Described equivalent resistance R3With described equivalent resistance R4Series winding, forms the second output electricityPress Vout2; And/or
Described equivalent resistance R1' with described equivalent resistance R2' series winding, forms the 3rd outputVoltage Vout1'; And/or
Described equivalent resistance R3' with described equivalent resistance R4' series winding, forms the 4th outputVoltage Vout2′。
(5), according to the Multifunction Sensor described in above-mentioned 3 or 4, wherein, there is additional magneticWhen field action, because of magneticaction, described the first cantilever beam bends, and described firstWheatstone bridge bridge roadlock value changes, described the first output voltage Vout1With describedThe second output voltage Vout2Form difference output, realize externally-applied magnetic field and measure.
(6) according to the Multifunction Sensor one of above-mentioned 3 to 5 described, wherein, outside havingWhen reinforcing is applied to the second cantilever beam top, described the second cantilever beam bends, instituteState the second Wheatstone bridge bridge roadlock value and change, described the 3rd output voltage Vout1′With described the 4th output voltage Vout2' form difference output, realize applied force and measure.
(7) according to the Multifunction Sensor one of above-mentioned 1 to 6 described, wherein, firstCantilever beam 1 comprise silica bottom 5, monocrystalline silicon 6, silicon dioxide top layer 7 and 13,Nano thin film 8, thin film transistor (TFT) source 9, gate oxide 10, thin film transistor (TFT) gridEnd 11, thin film transistor (TFT) drain terminal 12 and magnetic material 3.
(8) according to the Multifunction Sensor one of above-mentioned 1 to 7 described, wherein, secondCantilever beam 2 comprise silica bottom 5, monocrystalline silicon 6, silicon dioxide top layer 7 and 13,Nano thin film 8, thin film transistor (TFT) source 9, gate oxide 10, thin film transistor (TFT) gridEnd 11, thin film transistor (TFT) drain terminal 12 and siliceous gauge block 4.
(9) according to the Multifunction Sensor one of above-mentioned 1 to 8 described, wherein,
Described the first silicon overarm arm 1 and described the second silicon overarm arm 2 adopt microelectronics to addWork system (MEMS) fabrication techniques, and/or
Described thin film transistor (TFT) adopts complementary metal oxide silicon (CMOS) workSkill is made.
The beneficial effect that the present invention has comprises:
1, the present invention makes two silicon cantilevers on same chip, can realize simultaneouslyTo the detection in power and magnetic field, there is integrated feature;
2, the present invention adopts cantilever beam structures to detect power/magnetic, improved the power of sensor/Magnetic sensitivity;
3, in the present invention, adopt respectively four thin film transistor channel equivalent resistances to formTwo open loop Hui Sitong bridge roads. The single thin film transistor (TFT) in convenient test bridge road, open loop bridge roadThe resistance of raceway groove equivalent resistance, thin film transistor (TFT) has from zeroing function simultaneously, can be realThe adjustment of existing sensor zero point drift, when sensor is in the effect without applied force or magnetic fieldTime, its output electrical signals is equalled zero, improve sensor applied force/magnetic has been detectedAccuracy;
4, this sensor is to make on high resistant monocrystalline silicon, and volume is little, and cost is low,Good stability.
Brief description of the drawings
Fig. 1 is power/magnetic Multifunction Sensor of a kind of preferred embodiment according to the present inventionBasic structure 3 dimensional drawing;
Fig. 2 is the structure for measurement of magnetic field, and equivalent circuit the first Wheatstone bridge 1 showsIntention;
Fig. 3 is that equivalent circuit the second Wheatstone bridge 2 is illustrated for the structure of power testFigure;
Fig. 4 is the first silicon cantilever generalized section;
Fig. 5 is the second silicon cantilever generalized section.
Drawing reference numeral explanation:
1-the first cantilever beam (Beam1);
2-the second cantilever beam (Beam2);
3-magnetic material (or first cantilever beam magnetic material);
The siliceous gauge block of 4-(or the siliceous gauge block of the second cantilever beam);
TFT1-the first film transistor;
TFT2-the second thin film transistor (TFT);
TFT3-the 3rd thin film transistor (TFT);
TFT4-the 4th thin film transistor (TFT);
TFT1 '-five thin film transistor (TFT)s;
TFT2 '-six thin film transistor (TFT)s;
TFT3 '-seven thin film transistor (TFT)s;
TFT4 '-eight thin film transistor (TFT)s;
G1-the first film transistor gate;
G2The-the second film crystal tube grid;
G3-tri-film crystal tube grids;
G4-tetra-film crystal tube grids;
G1The ' the-five film crystal tube grid;
G2The ' the-six film crystal tube grid;
G3The ' the-seven film crystal tube grid;
G4The ' the-eight film crystal tube grid;
Vout1The-the first output;
Vout2The-the second output;
Vout1The ' the-tri-output;
Vout2The ' the-tetra-output;
VSS、VDD-the first connects power supply;
VSS′、VDD'-the second connects power supply;
R1-the first film transistor channel equivalent resistance;
R2The-the second thin film transistor channel equivalent resistance;
R3-tri-thin film transistor channel equivalent resistances;
R4-tetra-thin film transistor channel equivalent resistances;
R1The ' the-five thin film transistor channel equivalent resistance;
R2The ' the-six thin film transistor channel equivalent resistance;
R3The ' the-seven thin film transistor channel equivalent resistance;
R4The ' the-eight thin film transistor channel equivalent resistance;
5-bottom layer silicon dioxide (SiO2)；
6-monocrystalline silicon (Si);
7-top layer silicon dioxide (SiO2)；
8-Nano thin film;
9-thin film transistor (TFT) source (S);
10-gate oxide;
11-thin film transistor (TFT) grid ends (G);
12-thin film transistor (TFT) drain terminal (D);
13-top layer silicon dioxide (SiO2)；
14-top layer silicon dioxide (SiO2)；
15-monocrystalline silicon (Si);
16-bottom layer silicon dioxide (SiO2)。
Detailed description of the invention
The present invention is described in detail below, and the features and advantages of the invention will be along with thisIllustrate a bit and become more clear, clear and definite.
Here special word " exemplary " means and " is used as example, embodiment or saysBright property ". Here needn't be interpreted as excellent as " exemplary " illustrated any embodimentIn or be better than other embodiment. Although the various aspects of embodiment shown in the drawings,But unless otherwise indicated, needn't draw in proportion accompanying drawing.
According to a kind of power/magnetic Multifunction Sensor provided by the invention, as shown in Figure 1,Comprise the first cantilever beam (Beam1) for detecting externally-applied magnetic field, and be used for detectingSecond cantilever beam (Beam2) of applied force. Described the first cantilever beam comprises that first is thinFilm transistor TFT1, the second thin film transistor (TFT) TFT2, the 3rd thin film transistor (TFT) TFT3,The 4th thin film transistor (TFT) TFT4 and free end, described the second cantilever beam comprises the 5th filmTransistor T FT1 ', the 6th thin film transistor (TFT) TFT2 ', the 7th thin film transistor (TFT) TFT3', the 8th thin film transistor (TFT) TFT4 ' and free end.
One preferred embodiment in, make at the root of described the first cantilever beamThe first film transistor T FT1, the second thin film transistor (TFT) TFT2, the 3rd film crystalPipe TFT3 and the 4th thin film transistor (TFT) TFT4, free end is manufactured with magnetic material; ?The root of described the second cantilever beam is made the 5th thin film transistor (TFT) TFT1 ', the 6th filmTransistor T FT2 ', the 7th thin film transistor (TFT) TFT3 ' and the 8th thin film transistor (TFT)TFT4 ', free end is manufactured with non-magnetic integrated siliceous gauge block; At same chipTwo cantilever beams of upper making can be realized the detection to power and magnetic field, integrated journey simultaneouslySpend high.
In further preferred embodiment, as shown in Figures 2 and 3, described firstThin film transistor (TFT) TFT1 raceway groove equivalent resistance R1, the second thin film transistor (TFT) TFT2 raceway grooveEquivalent resistance R2, the 3rd thin film transistor (TFT) TFT3 raceway groove equivalent resistance R3With the 4th thinFilm transistor TFT4 raceway groove equivalent resistance R4, described the 5th thin film transistor (TFT) TFT1 'Raceway groove equivalent resistance R1', the 6th thin film transistor (TFT) TFT2 ' raceway groove equivalent resistance R2′、The 7th thin film transistor (TFT) TFT3 ' raceway groove equivalent resistance R3' and the 8th thin film transistor (TFT)TFT4 ' raceway groove equivalent resistance R4'. Described equivalent resistance R1, equivalent resistance R2, equivalenceResistance R3With equivalent resistance R4Form the first Wheatstone bridge; Described raceway groove equivalent resistanceR1', equivalent resistance R2', raceway groove equivalent resistance R3' and raceway groove equivalent resistance R4' formThe second Wheatstone bridge.
The resistance of the single thin film transistor channel equivalent resistance in convenient test bridge road, open loop bridge roadValue, thin film transistor (TFT) has from zeroing function simultaneously, can realize sensor zero point driftAdjustment, when sensor is in the used time of doing without applied force or magnetic field, make its output electricitySignal equals zero, and has improved the accuracy that sensor detects applied force/magnetic.
Further preferred embodiment in, described equivalent resistance R1With described etc.Effect resistance R2Series winding, forms the first output voltage Vout1; Described equivalent resistance R3With instituteState equivalent resistance R4Series winding, forms the second output voltage Vout2; Described equivalent resistance R1′With described equivalent resistance R2' series winding, forms the 3rd output voltage Vout1'; Described equivalenceResistance R3' with described equivalent resistance R4' series winding, forms the 4th output voltage Vout2′。
Have externally-applied magnetic field to do the used time, because of magneticaction, described the first cantilever beam occurs curvedSong, described the first Wheatstone bridge bridge roadlock value changes, described the first output electricityPress Vout1With described the second output voltage Vout2Form difference output, realize externally-applied magnetic fieldMeasure. While having applied force to be applied to the second cantilever beam top, described the second cantilever beam is sent outRaw bending, described the second Wheatstone bridge bridge roadlock value changes, described the 3rd defeatedGo out voltage Vout1' and described the 4th output voltage Vout2' form difference output, outside realizationAfterburning measurement.
One preferred embodiment in, as shown in Figure 4 and Figure 5, described first is outstandingArm beam 1 comprises silica bottom 5, monocrystalline silicon 6, silicon dioxide top layer 7 and 13, receivesRice silicon thin film 8, thin film transistor (TFT) source 9, gate oxide 10, thin film transistor (TFT) grid end11, thin film transistor (TFT) drain terminal 12 and magnetic material 3. Described the second cantilever beam 2 comprises twoSilica bottom layer 5, monocrystalline silicon 6, silicon dioxide top layer 7 and 13, Nano thin film 8,Thin film transistor (TFT) source 9, gate oxide 10, thin film transistor (TFT) grid end 11, film crystalline substanceBody pipe drain terminal 12 and siliceous gauge block 4.
In further preferred embodiment, described the first silicon overarm arm 1 and described inThe second silicon overarm arm 2 adopts microelectronics system of processing (MEMS) fabrication techniques, instituteStating thin film transistor (TFT) adopts complementary metal oxide silicon (CMOS) technique to make.
Further preferred embodiment in, described sensor is at high resistant monocrystallineOn silicon substrate, pass through microelectron-mechanical process technology (MEMS) and complementary metalCompound semiconductor technology (CMOS) realizes makes, and adopts electrostatic bonding technology(Bonding), under 800-1000V voltage, 300-400 DEG C high temperature, pass through twoThe great electrostatic force in interface by sensor chip and Pyrex key with together with, and profitBe encapsulated in printed circuit board (PCB) (PCB) by pressure welding technology upper, finally by high accuracy magneticField calibration system and high-precision full-automatic thrust meter complete sensor characteristics and demarcate. This biographySensor is made on high resistant monocrystalline silicon, and volume is little, and cost is low, good stability.
Further preferred embodiment in, described sensor production comprises followingProcessing step:
Step 1: thickness is N-type<100 of 450 μ m>crystal orientation twin polishing monocrystallineSilicon chip;
Step 2: boil to emitting white cigarette a large amount of deionized waters punchings of cooling rear use with the concentrated sulfuric acidWash, then adopt respectively electronics cleaning fluid and each clean twice No. 1, No. 2, with going in a large numberIonized water rinses, and puts into drier and dries;
Step 3: cleaned monocrystalline silicon piece is put into high temperature oxidation furnace and carry out onceOxidation, adopts thermal oxidation technology growth SiO2Layer, 1180 DEG C of oxidation furnace temperature, rawLong SiO2Layer thickness 650nm;
Step 4: adopt litho machine carry out a photoetching, photolithography process be gluing,Front baking, exposure, development, post bake, corrode and remove photoresist, photoetching forms thin film transistor (TFT)Active area window, adopts above-mentioned steps three silicon wafer cleaning method cleaning silicon chips;
Step 5: adopt chemical vapour deposition (CVD) (CVD) system growing nano silicon thin film,And to carry out original position low-doped simultaneously;
Step 6: adopt litho machine carry out secondary photoetching, photolithography process be gluing,Front baking, exposure, development, post bake, corrode and remove photoresist, photoetching forms thin film transistor (TFT)In-situ doped p-type channel layer, adopts above-mentioned steps three silicon wafer cleaning method cleaning silicon chips;
Step 7: silicon chip after cleaning is carried out to secondary oxidation, adopt thermal oxidation technology rawLong SiO2Layer, regrows thickness 50nm's at the active area window of a photoetchingSiO2Layer, as gate oxide;
Step 8: adopt low-pressure chemical vapor deposition (LPCVD) system growth polycrystallineSilicon thin film;
Step 9: adopt litho machine carry out third photo etching, photolithography process be gluing,Front baking, exposure, development, post bake, corrode and remove photoresist, photoetching forms thin film transistor (TFT)Polysilicon gate adopts above-mentioned steps three silicon wafer cleaning method cleaning silicon chips simultaneously;
Step 10: adopt ion implantation apparatus to inject P ion, Implantation Energy is 40KeV,(for example dosage is 6.0 × 10 to high dose13) inject, the diffusion of polysilicon gate phosphorus, withReduce resistance of polycrystalline silicon grid rate, by polysilicon gate self-aligned technology, realize thinFilm transistor source electrode and drain electrode impurity doping, 900 DEG C of high annealings 60 minutes;
Step 11: adopt litho machine to carry out four mask, photolithography process is for being coated withGlue, front baking, exposure, development, post bake, corrode and remove photoresist, photoetching forms film crystalline substanceBody pipe polysilicon gate adopts above-mentioned steps three silicon wafer cleaning method cleaning silicon chips simultaneously;Adopt wet etching to remove the SiO of thickness 50nm2Layer;
Step 12: pass through H2+O2Synthetic oxidizing process is carried out polysilicon gate oxidation,Growth SiO2Layer thickness 400nm, realizes polysilicon gate protection;
Step 13: by five photoetching, etched film transistor source, drain electrode andGrid; Front side of silicon wafer Magnetron Sputtered Al electrode, aluminium thickness of electrode 0.5 μ m;
Step 14: six photoetching, anti-carve aluminium, form respectively source electrode, drain electrode and gridUtmost point electrode;
Step 15: silicon chip is put into vacuum high temperature furnace, carry out alloy at 400 DEG CChange and process, time 30min, makes source electrode and drain electrode etc. form good Ohmic contact;
Step 10 six: make magnetic material at the first cantilever beam free end;
Seven: seven photoetching of step 10, photoetching silicon chip back side forms silicon cup window;
Eight: eight photoetching of step 10, dual surface lithography front side of silicon wafer forms cantilever beam structuresWindow;
Step 10 nine: adopt deep etching (ICP) technology etching C type silicon cup, releasePut cantilever beam structures;
Step 2 ten: sensor chip is tentatively tested;
Step 2 11: sensor chip encapsulation;
Step 2 12: sensor is always surveyed.
Wherein, described microelectron-mechanical system of processing (MEMS,Micro-Electro-MechanicalSystem), refer to micrometer/nanometer material is enteredRow design, processing, manufacture, measurement and the technology of controlling, be also called microelectron-mechanicalSystem, micro-system, micromechanics etc. are at microelectric technique (semiconductor fabrication)On basis, grow up, relate to material, machinery, electronics, microelectronics, chemistry,Physics (particularly mechanics and optics), biology, medical science, information etc. are multidisciplinary.Photoetching, burn into film, LIGA, the micro-processing of silicon, the micro-processing of non-silicon and essence are mergedThe high-tech electronic mechanical devices of the fabrication techniques such as close machining, wherein, LIGARefer to photoetching, electroforming and injection moulding; The feature of MEMS technology can be summarized as small size,Variation, little, the integrated height of device volume of preparing by MEMS technology; InstituteState CMOS technique and refer to complementary metal oxide silicon (ComplementaryMetal-Oxide-Semiconductor), field-effect transistor wherein(MOSFET) being voltage-controlled device, is composition cmos digital integrated electricThe core devices of road and CMOS Analogous Integrated Electronic Circuits, described CMOS technique is concreteRefer to the common complementation forming of CMOS (PMOS pipe and NMOS pipe)Type MOS integrated circuit fabrication process, its feature is low-power consumption.
Described LPCVD (Low Pressure Chemical Vapor Deposition) is to arrive at pressure decreasedA kind of CVD reaction below 100Torr, is widely used in dopant deposition or plainPolysilicon, silicon nitride, silica, silicide film. Because molecule under low pressure is averageFree path increases, and the mass transport speed of gaseous reactant and byproduct is accelerated, therebyThe reaction speed that forms deposit film material is accelerated, and distribution of gas is inhomogeneous simultaneouslyProperty can be eliminated within very short time, so high, the good uniformity of film quality of deposition,Structural intergrity is good, pin hole is few.
Described ICP refers to inductively coupled plasma, wherein, and inductive couple plasmaBody (ICP) lithographic technique is one of key technology in mems device processing.
In conjunction with detailed description of the invention and exemplary example, the present invention is carried out in detail aboveIllustrate, but these explanations can not be interpreted as limitation of the present invention. This area skillArt personnel understand, in the situation that not departing from spirit and scope of the invention, and can be to thisInvention technical scheme and embodiment thereof carry out multiple replacement of equal value, modify or improve,These all fall within the scope of the present invention. Protection scope of the present invention is wanted with appended rightAsk and be as the criterion.
Claims (9)
1. power/magnetic Multifunction Sensor, is characterized in that, this sensor comprises:
Be used for detecting first cantilever beam (1) of externally-applied magnetic field, and
Be used for detecting second cantilever beam (2) of applied force.
2. Multifunction Sensor according to claim 1, is characterized in that,
Described the first cantilever beam (1) is silicon cantilever, comprises (preferably root is made)Four thin film transistor (TFT)s are the first film transistor T FT1, the second thin film transistor (TFT)TFT2, the 3rd thin film transistor (TFT) TFT3 and the 4th thin film transistor (TFT) TFT4, its topFor free end, preferred fabrication is magnetic material (3); And/or
Described the second cantilever beam (2) is silicon cantilever, comprises (preferably root is made)Four thin film transistor (TFT)s, the 5th thin film transistor (TFT) TFT1 ', the 6th thin film transistor (TFT)TFT2 ', the 7th thin film transistor (TFT) TFT3 ' and the 8th thin film transistor (TFT) TFT4 ', itsTop is free end, and the integrated siliceous gauge block of preferred fabrication (4), more preferably without magneticProperty material.
3. Multifunction Sensor according to claim 1 and 2, is characterized in that,
Described the first film transistor T FT1 raceway groove equivalent resistance R1, the second film crystalline substanceBody pipe TFT2 raceway groove equivalent resistance R2, the 3rd thin film transistor (TFT) TFT3 raceway groove equivalent electricResistance R3With the 4th thin film transistor (TFT) TFT4 raceway groove equivalent resistance R4, preferred described equivalenceResistance R1, equivalent resistance R2, equivalent resistance R3With equivalent resistance R4Form the first favour thisEnergising bridge; And/or
Described the 5th thin film transistor (TFT) TFT1 ' raceway groove equivalent resistance R1', the 6th film crystalline substanceBody pipe TFT2 ' raceway groove equivalent resistance R2', the 7th thin film transistor (TFT) TFT3 ' raceway groove equivalenceResistance R3' and the 8th thin film transistor (TFT) TFT4 ' raceway groove equivalent resistance R4', preferably described inRaceway groove equivalent resistance R1', equivalent resistance R2', raceway groove equivalent resistance R3' and raceway groove equivalenceResistance R4' formation the second Wheatstone bridge.
4. Multifunction Sensor according to claim 3, is characterized in that,
Described equivalent resistance R1With described equivalent resistance R2Series winding, forms the first output electricityPress Vout1; And/or
Described equivalent resistance R3With described equivalent resistance R4Series winding, forms the second output electricityPress Vout2; And/or
Described equivalent resistance R1' with described equivalent resistance R2' series winding, forms the 3rd outputVoltage Vout1'; And/or
Described equivalent resistance R3' with described equivalent resistance R4' series winding, forms the 4th outputVoltage Vout2′。
5. according to the Multifunction Sensor described in claim 3 or 4, it is characterized in that,Have externally-applied magnetic field to do the used time, because of magneticaction, described the first cantilever beam bends,Described the first Wheatstone bridge bridge roadlock value changes, described the first output voltageVout1With described the second output voltage Vout2Form difference output, realize externally-applied magnetic field and surveyAmount.
6. according to the Multifunction Sensor one of claim 3 to 5 Suo Shu, its feature existsIn, while having applied force to be applied to the second cantilever beam top, described the second cantilever beam occursBending, described the second Wheatstone bridge bridge roadlock value changes, described the 3rd outputVoltage Vout1' and described the 4th output voltage Vout2' form difference output, realize additionalPower is measured.
7. according to the Multifunction Sensor one of claim 1 to 6 Suo Shu, its feature existsIn, described the first cantilever beam (1) comprise silica bottom (5), monocrystalline silicon (6),Silicon dioxide top layer (7 and 13), Nano thin film (8), thin film transistor (TFT) source (9),Gate oxide (10), thin film transistor (TFT) grid end (11), thin film transistor (TFT) drain terminal (12)And magnetic material (3).
8. according to the Multifunction Sensor one of claim 1 to 7 Suo Shu, its feature existsIn, described the second cantilever beam (2) comprise silica bottom (5), monocrystalline silicon (6),Silicon dioxide top layer (7 and 13), Nano thin film (8), thin film transistor (TFT) source (9),Gate oxide (10), thin film transistor (TFT) grid end (11), thin film transistor (TFT) drain terminal (12)With siliceous gauge block (4).
9. according to the Multifunction Sensor one of claim 1 to 8 Suo Shu, its feature existsIn,
Described the first silicon overarm arm (1) and described the second silicon overarm arm (2) adopt micro-Electronics system of processing (MEMS) fabrication techniques, and/or
Described thin film transistor (TFT) adopts complementary metal oxide silicon (CMOS) workSkill is made.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107063521A (en) * | 2017-04-28 | 2017-08-18 | 黑龙江大学 | A kind of micro- power load maintainer and its manufacture craft and application with closed loop function |
| CN107356885A (en) * | 2017-08-18 | 2017-11-17 | 黑龙江大学 | A kind of single-chip integration two-dimensional magnetic field sensor and its manufacture craft |
| CN107526469A (en) * | 2017-08-23 | 2017-12-29 | 厦门天马微电子有限公司 | A kind of pressure sensor and its control method, display panel and display device |
| CN108987392A (en) * | 2018-08-14 | 2018-12-11 | 黑龙江大学 | A kind of composite magnetic field sensor and its manufacture craft |
| CN109856425A (en) * | 2018-04-20 | 2019-06-07 | 黑龙江大学 | A kind of monolithic integrated tri-axial acceleration sensor and its manufacture craft |
| CN113030803A (en) * | 2021-03-01 | 2021-06-25 | 歌尔微电子股份有限公司 | Magnetic sensor, method for manufacturing magnetic sensor, and electronic device |
| CN114113313A (en) * | 2021-10-27 | 2022-03-01 | 山东师范大学 | Cantilever beam type surface acoustic wave sensor for detecting escherichia coli and working method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070209437A1 (en) * | 2005-10-18 | 2007-09-13 | Seagate Technology Llc | Magnetic MEMS device |
| CN101693512A (en) * | 2009-10-30 | 2010-04-14 | 北京工业大学 | Compound cantilever beam needle point used for micro-nano microtechnique and manufacturing method thereof |
| CN105174201A (en) * | 2015-06-24 | 2015-12-23 | 上海芯赫科技有限公司 | MEMS (Micro-Electro-Mechanical System) integrated composite sensor and machining method thereof |
| CN105258738A (en) * | 2015-11-26 | 2016-01-20 | 黑龙江大学 | Pressure/two-dimensional magnetic field single chip integrated sensor |
| CN205561900U (en) * | 2016-03-16 | 2016-09-07 | 黑龙江大学 | Power / magnetism multi -functional sensor |
-
2016
- 2016-03-16 CN CN201610150468.8A patent/CN105606158B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070209437A1 (en) * | 2005-10-18 | 2007-09-13 | Seagate Technology Llc | Magnetic MEMS device |
| CN101693512A (en) * | 2009-10-30 | 2010-04-14 | 北京工业大学 | Compound cantilever beam needle point used for micro-nano microtechnique and manufacturing method thereof |
| CN105174201A (en) * | 2015-06-24 | 2015-12-23 | 上海芯赫科技有限公司 | MEMS (Micro-Electro-Mechanical System) integrated composite sensor and machining method thereof |
| CN105258738A (en) * | 2015-11-26 | 2016-01-20 | 黑龙江大学 | Pressure/two-dimensional magnetic field single chip integrated sensor |
| CN205561900U (en) * | 2016-03-16 | 2016-09-07 | 黑龙江大学 | Power / magnetism multi -functional sensor |
Non-Patent Citations (1)
| Title |
|---|
| 赵晓锋: "纳米硅/单晶硅异质结MOSFETs压/磁多功能传感器研究", 《中国博士学位论文全文数据库 信息科技辑》 * |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107063521A (en) * | 2017-04-28 | 2017-08-18 | 黑龙江大学 | A kind of micro- power load maintainer and its manufacture craft and application with closed loop function |
| CN107063521B (en) * | 2017-04-28 | 2023-10-13 | 黑龙江大学 | Micro-force loading mechanism with closed loop function and manufacturing process and application thereof |
| CN107356885A (en) * | 2017-08-18 | 2017-11-17 | 黑龙江大学 | A kind of single-chip integration two-dimensional magnetic field sensor and its manufacture craft |
| CN107356885B (en) * | 2017-08-18 | 2023-06-02 | 黑龙江大学 | Monolithic integrated two-dimensional magnetic field sensor and manufacturing process thereof |
| CN107526469A (en) * | 2017-08-23 | 2017-12-29 | 厦门天马微电子有限公司 | A kind of pressure sensor and its control method, display panel and display device |
| CN107526469B (en) * | 2017-08-23 | 2021-01-01 | 厦门天马微电子有限公司 | Pressure sensor, control method thereof, display panel and display device |
| CN109856425A (en) * | 2018-04-20 | 2019-06-07 | 黑龙江大学 | A kind of monolithic integrated tri-axial acceleration sensor and its manufacture craft |
| CN108987392A (en) * | 2018-08-14 | 2018-12-11 | 黑龙江大学 | A kind of composite magnetic field sensor and its manufacture craft |
| CN108987392B (en) * | 2018-08-14 | 2024-01-02 | 黑龙江大学 | Composite magnetic field sensor and manufacturing process thereof |
| CN113030803A (en) * | 2021-03-01 | 2021-06-25 | 歌尔微电子股份有限公司 | Magnetic sensor, method for manufacturing magnetic sensor, and electronic device |
| CN114113313A (en) * | 2021-10-27 | 2022-03-01 | 山东师范大学 | Cantilever beam type surface acoustic wave sensor for detecting escherichia coli and working method |
| CN114113313B (en) * | 2021-10-27 | 2024-03-22 | 山东师范大学 | Cantilever beam type surface acoustic wave sensor for detecting escherichia coli and working method |
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