CN105633237A - Vertical light emitting diode (LED) chip - Google Patents
Vertical light emitting diode (LED) chip Download PDFInfo
- Publication number
- CN105633237A CN105633237A CN201610169124.1A CN201610169124A CN105633237A CN 105633237 A CN105633237 A CN 105633237A CN 201610169124 A CN201610169124 A CN 201610169124A CN 105633237 A CN105633237 A CN 105633237A
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- Prior art keywords
- led chip
- vertical led
- electrode
- chip
- main electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
Abstract
The invention provides a vertical light emitting diode (LED) chip. The vertical LED chip comprises a polygonal vertical LED chip and an electrode, wherein the polygonal vertical LED chip is provided with an N-type GaN layer on the surface, the electrode is formed on the surface of the N-type GaN layer and comprises a central welding pad and a multi-interpolation main electrode, and the multi-interpolation main electrode is electrically connected with the central welding pad and points towards the edge of the chip from the welding pad. In the vertical LED chip, through the chip shape design and electrode distribution design, the current expansion capability of the chip is improved, the luminous efficiency of the chip is improved, and thus, the light emitting efficiency of the chip is further improved.
Description
Technical field
The invention belongs to LED chip field, it relates to a kind of vertical LED chip, particularly relate to a kind of snowflake type vertical LED chip.
Background technology
Photodiode (LED, LightEmittingDiode) is a kind of semi-conductor solid luminescence device, and it utilizes semiconductor PN as luminescent material, it is possible to directly electricity is converted to light.
In various semiconductor material, taking gan (GaN) as the Group III-V compound semiconductor of representative is owing to having the features such as band gap length, luminous efficiency height, electronics saturation drift velocity height, chemical property are stable, and have huge application potential in field of optoelectronic devices such as high brightness blue light-emitting diode, blue lasers, cause the extensive concern of people.
The current crowding that traditional LED shows under big current, the inferior positions such as voltage height make vertical LED chip seem with the obvious advantage in high-power chip application. With regard to current vertical chip, still there is metal electrode zone current congested (currentcrowding), the congested one side of electric current reduces the chip life-span, reduces chip light emitting efficiency on the one hand.
Usual LED vertical chip is tetragon, and two electrodes are respectively in the both sides of LED epitaxial film, and electric current almost all flows vertically through LED epitaxial film, rarely the electric current of transverse flow, and distribution of current is uneven, and chip light emitting efficiency is low,
Therefore, it is provided that a kind of be conducive to the LED vertical chip structure cloth of current expansion to be necessary.
Summary of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of vertical LED chip, and for solving vertical LED chip in prior art, to there is electric current congested, the problems such as luminous efficiency is low.
For achieving the above object and other relevant objects, the present invention provides a kind of vertical LED chip, and described vertical LED chip at least comprises:
Surface has the Polygons vertical LED chip of N-type GaN layer;
Electrode, be formed at described N-type GaN layer surface, described electrode comprise center weldering pad and described center weldering pad be electrically connected and by described weldering pad point to chip edge how slotting finger main electrode.
As the structure of a kind of optimization of vertical LED chip of the present invention, described insert refers to that main electrode is evenly distributed on the surrounding that pad is welded at described center more.
As the structure of a kind of optimization of vertical LED chip of the present invention, described insert refers to that main electrode is tail end away from one end of described center weldering pad more, and described tail end is apart from described vertical LED chip edge 8��12mil.
As the structure of a kind of optimization of vertical LED chip of the present invention, described Polygons vertical LED chip is hexagon, and described insert refers to that main electrode is six slotting finger main electrodes more.
As the structure of a kind of optimization of vertical LED chip of the present invention, insert at every root and refer to main electrode is also provided with at least one electrode.
As the structure of a kind of optimization of vertical LED chip of the present invention, inserting at every root and refer to also be provided with one electrode in main electrode, described electrode is positioned to insert and refers to main electrode tail end 1/3 place.
As the structure of a kind of optimization of vertical LED chip of the present invention, described electrode entirety is in snowflake type.
As the structure of a kind of optimization of vertical LED chip of the present invention, described insert refers to that the radical of main electrode is consistent with the limit number of described vertical LED chip more.
As the structure of a kind of optimization of vertical LED chip of the present invention, the Polygons vertical LED chip that described surface has N-type GaN layer at least comprises: conductive substrates and the bonded layer being formed in successively in described conductive substrates, reflecting layer, P type GaN layer, multiple quantum well layer and N-type GaN layer.
As mentioned above, it is necessary, the vertical LED chip of the present invention, comprising: surface has the Polygons vertical LED chip of N-type GaN layer; Electrode, be formed at described N-type GaN layer surface, described electrode comprise center weldering pad and described center weldering pad be electrically connected and by described weldering pad point to chip edge how slotting finger main electrode. The vertical LED chip of the present invention is designed by chip form and distribution of electrodes design, it is to increase the current expansion ability of chip and chip light-emitting efficiency, thus further increases chip light emitting efficiency.
Accompanying drawing explanation
Fig. 1 is shown as the structure vertical view of vertical LED chip of the present invention.
Fig. 2 is shown as the section of structure of vertical LED chip of the present invention.
Element numbers explanation
1 Polygons vertical LED chip
11 conductive substrates
12 bonded layers
13 reflecting layer
14P type GaN layer
15 multiple quantum well layers
16N type GaN layer
2 electrodes
21 center weldering pads
Insert 22 more and refer to main electrode
23 electrodes
Embodiment
By particular specific embodiment, embodiments of the present invention being described below, person skilled in the art scholar the content disclosed by this specification sheets can understand other advantages and effect of the present invention easily.
Refer to Fig. 1 to Fig. 2. Notice, structure that this specification sheets institute accompanying drawings illustrates, ratio, size etc., all only content in order to coordinate specification sheets to disclose, understand for person skilled in the art scholar and read, and be not used to limit the enforceable qualifications of the present invention, therefore do not have an essential meaning in technology, the adjustment of the modification of any structure, the change of proportionlity or size, not affecting under effect that the present invention can produce and the object that can reach, all should still drop on disclosed technology contents and obtain in the scope that can contain. Simultaneously, this specification sheets is quoted as " on ", D score, "left", "right", " centre " and " one " etc. term, also only for ease of understanding of describing, and it is not used to limit the enforceable scope of the present invention, the change of its relative relation or adjustment, under changing technology contents without essence, when being also considered as the enforceable category of the present invention.
As shown in Figure 1, the present invention provides a kind of vertical LED chip, and described vertical LED chip at least comprises surface to be had the Polygons vertical LED chip 1 of N-type GaN layer and is formed at the electrode 2 on described N-type GaN layer surface.
Described Polygons vertical LED chip 1 can be pentagon, hexagon, heptagon etc. In the present embodiment, described Polygons vertical LED chip 1 is hexagonal vertical LED chip.
Exemplarily, as shown in Figure 2, the Polygons vertical LED chip 1 that described surface has a N-type GaN layer at least comprises: conductive substrates 11 and the bonded layer 12 being formed in successively in described conductive substrates 11, reflecting layer 13, P type GaN layer 14, multiple quantum well layer 15 and N-type GaN layer 16. It is formed at electrode 2 on described N-type GaN layer 16 surface.
Wherein, there is good ohmic contact in described reflecting layer 13 with P type GaN layer 14 and has high-reflectivity characteristic. Described reflecting layer 13 material is one or more combinations in Ni, Ag, Ti, Pt, Al or Rh etc., and thickness isIn the present embodiment, adopt Ag as reflecting layer 13 material. Certainly, other reflective metals also may be applicable to the present invention, is not limited thereto the example that place is enumerated.
Described bonded layer 12 material is one or more the combination in Cr, Ni, Ti, Pt, Au or Sn, and thickness isIn the present embodiment, adopt Au/Sn as bonded layer 12 material. Certainly, other bonding metal also may be applicable to the present invention, is not limited thereto the example that place is enumerated.
Exemplarily, described conductive substrates 11 can be Si, Mo or SiC etc. In the present embodiment, described conductive substrates 11 is Mo metal substrate, utilizes conduction and thermal conductivity that described conductive substrates 11 is higher, it is possible to greatly improve the heat radiation efficiency of LED chip.
As shown in Figure 1, described electrode 2 comprise center weldering pad 21 and described center weldering pad 21 be electrically connected and by described weldering pad 21 sensing chip 1 edges how slotting finger main electrode 22. Described insert refers to that main electrode 22 is in surrounding diffusion type more. Passivation layer (diagram) can be formed with between described center weldering pad 21 and N-type GaN layer 16.
Further, described insert refers to that main electrode 22 is evenly distributed on the surrounding that the weldering of described center pads 21 more. In addition, it is desired to described insert refers to that the radical of main electrode 22 is consistent with the limit number of described vertical LED chip 1 more. Like this, in the present embodiment, described insert refers to that main electrode 22 is six slotting finger main electrodes more.
Further, every root slotting finger, main electrode 22 is also provided with at least one electrode 23. In the present embodiment, insert at every root and refer to main electrode 22 is also provided with one electrode 23, and described electrode 23 is positioned at slotting finger main electrode 22 tail end 1/3 place. As shown in Figure 1, described electrode 2 entirety presents snowflake type, is conducive to current spread, it is to increase chip light emitting efficiency.
By described electrode 23, it is possible to improve current expansion further, it is to increase the luminous efficiency of chip.
In addition, described insert refers to that main electrode 22 is tail end away from one end of described center weldering pad 21 more, and there is certain distance at the edge of this one end distance chip 1, probably at 8��12mil. In the present embodiment, this distance is preferably 10mil. In other embodiments, described insert refers to that the tail end of main electrode 22 can also be 8mil, 9mil, 9.5mil, 11mil, 12mil etc. apart from chip 1 edge more, does not limit at this.
The material of described electrode 2 is one or more the combination in Cr, Ni, Al, Ti, Pt or Au, and thickness isIn the present embodiment, adopt Ni/Au layer as the material of electrode 2. Certainly, other electrode metal also may be applicable to the present invention, is not limited thereto the example that place is enumerated.
In sum, the present invention provides a kind of vertical LED chip, comprising: surface has the Polygons vertical LED chip of N-type GaN layer; Electrode, be formed at described N-type GaN layer surface, described electrode comprise center weldering pad and described center weldering pad be electrically connected and by described weldering pad point to chip edge how slotting finger main electrode. The vertical LED chip of the present invention is designed by chip form and distribution of electrodes design, it is to increase the current expansion ability of chip and chip light-emitting efficiency, thus further increases chip light emitting efficiency.
So, the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is the principle of illustrative the present invention and effect thereof only, but not for limiting the present invention. Above-described embodiment all under the spirit not running counter to the present invention and category, can be modified or change by any person skilled in the art scholar. Therefore, in art, tool usually intellectual, not departing under disclosed spirit and technological thought all the equivalence modifications completed or change, must be contained by the claim of the present invention such as.
Claims (9)
1. a vertical LED chip, it is characterised in that, described vertical LED chip at least comprises:
Surface has the Polygons vertical LED chip of N-type GaN layer;
Electrode, be formed at described N-type GaN layer surface, described electrode comprise center weldering pad and described center weldering pad be electrically connected and by described weldering pad point to chip edge how slotting finger main electrode.
2. vertical LED chip according to claim 1, it is characterised in that: described insert refers to that main electrode is evenly distributed on the surrounding that pad is welded at described center more.
3. vertical LED chip according to claim 1, it is characterised in that: described insert refers to that main electrode is tail end away from one end of described center weldering pad more, and described tail end is apart from described vertical LED chip edge 8��12mil.
4. vertical LED chip according to claim 1, it is characterised in that: described Polygons vertical LED chip is hexagon, and described insert refers to that main electrode is six slotting finger main electrodes more.
5. vertical LED chip according to claim 1 or 4, it is characterised in that: insert at every root and refer to main electrode is also provided with at least one electrode.
6. vertical LED chip according to claim 5, it is characterised in that: inserting at every root and refer to also be provided with one electrode in main electrode, described electrode is positioned to insert and refers to main electrode tail end 1/3 place.
7. vertical LED chip according to claim 6, it is characterised in that: described electrode entirety is in snowflake type.
8. vertical LED chip according to claim 1, it is characterised in that: described insert refers to that the radical of main electrode is consistent with the limit number of described vertical LED chip more.
9. vertical LED chip according to claim 1, it is characterised in that: the Polygons vertical LED chip that described surface has N-type GaN layer at least comprises: conductive substrates and the bonded layer being formed in successively in described conductive substrates, reflecting layer, P type GaN layer, multiple quantum well layer and N-type GaN layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610169124.1A CN105633237A (en) | 2016-03-23 | 2016-03-23 | Vertical light emitting diode (LED) chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610169124.1A CN105633237A (en) | 2016-03-23 | 2016-03-23 | Vertical light emitting diode (LED) chip |
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| CN105633237A true CN105633237A (en) | 2016-06-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610169124.1A Pending CN105633237A (en) | 2016-03-23 | 2016-03-23 | Vertical light emitting diode (LED) chip |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105990502A (en) * | 2016-07-22 | 2016-10-05 | 江苏国泽光电科技有限公司 | High-light extraction efficiency white LED packaging structure |
| CN106972090A (en) * | 2017-04-14 | 2017-07-21 | 华南理工大学 | A kind of arc line shaped N electrode and light emitting diode (LED) chip with vertical structure |
| CN109461770A (en) * | 2018-10-11 | 2019-03-12 | 中山大学 | The tri-nitride p-type ohmic electrode structure of low contact resistance |
| CN111081831A (en) * | 2019-11-20 | 2020-04-28 | 华南师范大学 | Multi-electrode-based illumination communication device and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5309001A (en) * | 1991-11-25 | 1994-05-03 | Sharp Kabushiki Kaisha | Light-emitting diode having a surface electrode of a tree-like form |
| US6307218B1 (en) * | 1998-11-20 | 2001-10-23 | Lumileds Lighting, U.S., Llc | Electrode structures for light emitting devices |
| CN201282152Y (en) * | 2008-08-21 | 2009-07-29 | 扬州大学 | Center circumambient shape GaN-based LED chip electrode |
| CN101794851A (en) * | 2010-02-24 | 2010-08-04 | 中国科学院半导体研究所 | Symmetrical electrodes for triangular GaN-based light-emitting diode (LED) chip |
| CN202034407U (en) * | 2010-12-29 | 2011-11-09 | 映瑞光电科技(上海)有限公司 | Led chip structure |
-
2016
- 2016-03-23 CN CN201610169124.1A patent/CN105633237A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5309001A (en) * | 1991-11-25 | 1994-05-03 | Sharp Kabushiki Kaisha | Light-emitting diode having a surface electrode of a tree-like form |
| US6307218B1 (en) * | 1998-11-20 | 2001-10-23 | Lumileds Lighting, U.S., Llc | Electrode structures for light emitting devices |
| CN201282152Y (en) * | 2008-08-21 | 2009-07-29 | 扬州大学 | Center circumambient shape GaN-based LED chip electrode |
| CN101794851A (en) * | 2010-02-24 | 2010-08-04 | 中国科学院半导体研究所 | Symmetrical electrodes for triangular GaN-based light-emitting diode (LED) chip |
| CN202034407U (en) * | 2010-12-29 | 2011-11-09 | 映瑞光电科技(上海)有限公司 | Led chip structure |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105990502A (en) * | 2016-07-22 | 2016-10-05 | 江苏国泽光电科技有限公司 | High-light extraction efficiency white LED packaging structure |
| CN106972090A (en) * | 2017-04-14 | 2017-07-21 | 华南理工大学 | A kind of arc line shaped N electrode and light emitting diode (LED) chip with vertical structure |
| CN109461770A (en) * | 2018-10-11 | 2019-03-12 | 中山大学 | The tri-nitride p-type ohmic electrode structure of low contact resistance |
| CN111081831A (en) * | 2019-11-20 | 2020-04-28 | 华南师范大学 | Multi-electrode-based illumination communication device and preparation method thereof |
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Application publication date: 20160601 |
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