CN105633279A - Phase-change memory unit comprising partially defined phase-change material structures and fabrication method - Google Patents
Phase-change memory unit comprising partially defined phase-change material structures and fabrication method Download PDFInfo
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- CN105633279A CN105633279A CN201610066316.XA CN201610066316A CN105633279A CN 105633279 A CN105633279 A CN 105633279A CN 201610066316 A CN201610066316 A CN 201610066316A CN 105633279 A CN105633279 A CN 105633279A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Patterning of the switching material
- H10N70/066—Patterning of the switching material by filling of openings, e.g. damascene method
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/861—Thermal details
- H10N70/8613—Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel
Abstract
The invention provides a phase-change memory unit comprising partially defined phase-change material structures and a fabrication method. The method comprises the following steps: (1) providing a substrate and forming at least one lower electrode in the substrate; (2) forming heating electrodes on the upper surface of the lower electrode and forming a first insulating material layer on the surface of the substrate between the heating electrodes; (3) etching and removing partial heating electrodes and the first insulating material layer by an etch-back process, and forming defined hole structures in the first insulating material layer at the upper parts of the heating electrodes; (4) forming the partially defined phase-change material structures in the defined hole structures, and forming upper electrodes on the surfaces of the partially defined phase-change material structures; and (5) forming extraction electrodes on the surfaces of the upper electrodes. Compared with a traditional mushroom device structure, the phase-change volume is reduced; the power consumption of the device can be greatly reduced; and the phase-change speed can be greatly improved. Compared with a completely defined phase-change material device structure, a chemical-mechanical polishing technology of the phase-change material does not need to be introduced, so that the damage to the upper surface of the phase-change material is avoided.
Description
Technical field
The invention belongs to microelectronic, particularly relate to a kind of phase-change memory cell comprising partially defined type phase change material structure and manufacture method.
Background technology
Phase change memory technology is based on Ovshinsky at late 1960s (Phys.Rev.Lett., 21,1450��1453,1968) (Appl.Phys.Lett. at the beginning of the seventies, 18,254��257,1971) phase-change thin film proposed can apply to what the conception of phase change memory medium was set up, is the memory device of a kind of low price, stable performance. Phase transition storage can be made in silicon wafer substrate, and its critical material is recordable phase-change thin film, heating electrode material, adiabator and extraction electrode material etc. The ultimate principle of phase transition storage is to utilize electric impulse signal to act on device cell, make phase-change material that reversible transition to occur between amorphous state and polycrystalline state, low-resistance during by high resistant when differentiating amorphous state with polycrystalline state, it is possible to achieve the write of information, erasing and read operation.
By international semiconductor TIA, phase transition storage, owing to having the at a high speed advantage such as readings, high erasable number of times, non-volatile, component size is little, strong motion low in energy consumption, anti-and radioprotective, is thought that the current flash memories of most possible replacement becomes future memory main product and becomes the device of commercial product at first.
The research of memorizer always towards high speed, high density, low-power consumption, high reliability direction develop. The mechanism's great majority being engaged in phase transition storage R&D work at present in the world are the major companies of semicon industry, one of focus that they pay close attention to is the heating electrode size how reducing phase transition storage, current commonplace employing is that sidewall contact type adds thermode, annular-heating electrode and blade-like add thermode and �� type adds thermode, but the shortcoming of said structure is to realize low-power consumption mainly by reduction electrode size, and the size of phase-change material is all relatively larger; In addition to the foregoing structure, also have the device architecture of the another kind of complete limit type of phase-change material, but the shortcoming of this structure and difficult point are that phase-change material is in the nano-filled and subsequent chemical-mechanical polishing technique more deeply limiting in hole.
It is therefore proposed that a kind of new nano-device cellular construction is necessary to solve above-mentioned technical problem.
Summary of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of phase-change memory cell comprising partially defined type phase change material structure and manufacture method, for solving the larger in size of phase-change material that mushroom-shaped device architecture in prior art exists, the problem that the power consumption of device architecture is big, transformation rate is low, and completely limit type device architecture exist fill difficulty and need chemically mechanical polishing and cause to the damnous problem in phase-change material surface.
For achieving the above object and other relevant purposes, the present invention provides the manufacture method of a kind of phase-change memory cell comprising partially defined type phase change material structure, described in comprise partially defined type phase change material structure the manufacture method of phase-change memory cell at least comprise the following steps:
1) providing substrate, form at least one bottom electrode in described substrate, described bottom electrode is embedded in described substrate, and the upper surface flush of the upper surface of described bottom electrode and described substrate;
2) add thermode in the upper surface formation of described bottom electrode, and form the first insulation material layer at the described described substrate surface added between thermode;
3) adopt back and add thermode and described first insulation material layer described in carving technology etching removal part, in described described first insulation material layer added above thermode, form limit type pore structure;
4) in described limit type pore structure, form part limit type phase change material structure, and form electrode on described partially defined type phase change material structure surface;
5) extraction electrode is formed in described upper electrode surface.
A kind of preferred version of manufacture method as the phase-change memory cell comprising partially defined type phase change material structure of the present invention, described step 1) in, adopt sputtering method, evaporation, chemical vapour deposition technique, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam epitaxy, atomic vapor deposition method or atomic layer deposition method to form described bottom electrode in described substrate.
A kind of preferred version of manufacture method as the phase-change memory cell comprising partially defined type phase change material structure of the present invention, described step 2) in, adopt sputtering method, evaporation, chemical vapour deposition technique, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam epitaxy, atomic vapor deposition method or atomic layer deposition method formed at the upper surface of described bottom electrode described in add thermode.
A kind of preferred version of manufacture method as the phase-change memory cell comprising partially defined type phase change material structure of the present invention, described step 2) in, add thermode described in being formed and can add thermode for cylindrical heater electrode or blade-like, the diameter of described cylindrical heater electrode is 1nm��100nm, it is highly 50nm��150nm, it is 1nm��30nm �� 5nm��100nm that described blade-like adds the cross sectional dimensions of thermode, is highly 50nm��150nm.
A kind of preferred version of manufacture method as the phase-change memory cell comprising partially defined type phase change material structure of the present invention, described step 3) in, cylindrically shaped, conical, the rectangle or trapezoidal of the described limit type pore structure formed, the cross sectional dimensions of described limit type pore structure is 5nm��50nm �� 10nm��150nm, is highly 10nm��100nm.
As a kind of preferred version of manufacture method of the phase-change memory cell comprising partially defined type phase change material structure of the present invention, described step 4) comprise the following steps:
4-1) adopt sputtering method, evaporation, chemical vapour deposition technique, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam epitaxy, atomic vapor deposition method or atomic layer deposition method in described limit type pore structure and described first insulation material layer surface forms phase-change material layers;
Sputtering method, evaporation, chemical vapour deposition technique, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam epitaxy, atomic vapor deposition method or atomic layer deposition method 4-2) is adopted to form upper electrode layer on described phase-change material layers surface;
4-3) etch described upper electrode layer and described phase-change material layers, form described upper electrode and described partially defined type phase change material structure.
A kind of preferred version of manufacture method as the phase-change memory cell comprising partially defined type phase change material structure of the present invention, the vertical sectional shape of described partially defined type phase change material structure is T-shaped, including Part I and Part II, described Part I fills up described limit type pore structure, described Part II is positioned at the upper surface of described Part I, and the lateral dimension of described Part II is more than the lateral dimension of described Part I.
A kind of preferred version of manufacture method as the phase-change memory cell comprising partially defined type phase change material structure of the present invention, step 4) after, the described first insulation material layer surface being additionally included between described partially defined type phase change material structure and described upper electrode forms the step of the second insulation material layer.
A kind of preferred version of manufacture method as the phase-change memory cell comprising partially defined type phase change material structure of the present invention, described step 5) in, adopt sputtering method, evaporation, chemical vapour deposition technique, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam epitaxy, atomic vapor deposition method or atomic layer deposition method to form extraction electrode in described upper electrode surface.
A kind of preferred version of manufacture method as the phase-change memory cell comprising partially defined type phase change material structure of the present invention, step 5) after, the described second insulation material layer surface being additionally included between described extraction electrode forms the step of the 3rd insulation material layer.
The present invention also provides for a kind of phase-change memory cell comprising partially defined type phase change material structure, described in comprise partially defined type phase change material structure phase-change memory cell include:
Substrate;
Bottom electrode, is embedded in described substrate, and the upper surface flush of upper surface and described substrate;
Add thermode, be positioned at the upper surface of described bottom electrode;
Partially defined type phase change material structure, adds the surface of thermode described in being positioned at;
Upper electrode, is positioned at the surface of described partially defined type phase change material structure;
Extraction electrode, is positioned at the surface of described upper electrode.
As a kind of preferred version of the phase-change memory cell comprising partially defined type phase change material structure of the present invention, described bottom electrode runs through described substrate and the lower surface flush of the lower surface of described bottom electrode and described substrate.
A kind of preferred version as the phase-change memory cell comprising partially defined type phase change material structure of the present invention, the described thermode that adds can add thermode for cylindrical heater electrode or blade-like, the diameter of described cylindrical heater electrode is 1nm��100nm, it is highly 50nm��150nm, it is 1nm��30nm �� 5nm��100nm that described blade-like adds the cross sectional dimensions of thermode,, it is highly 50nm��150nm.
A kind of preferred version as the phase-change memory cell comprising partially defined type phase change material structure of the present invention, the vertical sectional shape of described partially defined type phase change material structure is T-shaped, including Part I and Part II, described Part I is positioned at described heating electrode surface, described Part II is positioned at the upper surface of described Part I, and the lateral dimension of described Part II is more than the lateral dimension of described Part I.
A kind of preferred version as the phase-change memory cell comprising partially defined type phase change material structure of the present invention, the described phase-change memory cell comprising partially defined type phase change material structure also includes the first insulation material layer, and described first insulation material layer is at the described described substrate surface added between thermode and described Part I.
A kind of preferred version as the phase-change memory cell comprising partially defined type phase change material structure of the present invention, the described phase-change memory cell comprising partially defined type phase change material structure also includes the second insulation material layer and the 3rd insulation material layer, described second insulation material layer described partially defined type phase change material structure and described on described first insulation material layer surface between electrode, described 3rd insulation material layer described second insulation material layer surface between described extraction electrode.
As mentioned above, the phase-change memory cell comprising partially defined type phase change material structure of the present invention and manufacture method, have the advantages that in the phase-change memory cell of the present invention and adopt partially defined type phase change material structure, it is characterized in the restriction hole carving formation by adding thermode to return and fills phase-change material, the region undergone phase transition in phase-change memory phase-change process is made to be limited only to limit in hole, compared with the mushroom-shaped device architecture of tradition, phase variable volume significantly reduces, and the Part II of T-shaped phase-change material is in crystalline state all the time, can as the seed crystal of T-shaped phase-change material Part I crystallization in the crystallization operating process of device cell, accelerate crystallization process, device power consumption can be substantially reduced and improve phase velocity, compared with complete limit type phase-change material device architecture, the CMP process of phase-change material need not be introduced, avoid the damage to phase-change material upper surface.
Accompanying drawing explanation
Fig. 1 is shown as the preparation flow schematic diagram of the phase-change memory cell comprising partially defined type phase change material structure of the present invention.
Fig. 2 to Figure 13 is shown as the cross section structure schematic diagram that each step of manufacture method of the phase-change memory cell comprising partially defined type phase change material structure of the present invention presents.
Figure 14 is shown as the comparison diagram comprising the phase-change memory cell of partially defined type phase change material structure and the operation electric current of the phase-change memory cell of mushroom-shaped phase change material structure of the present invention.
Element numbers explanation
10 substrates
11 bottom electrodes
12 add thermode
13 first insulation material layers
14 limit type pore structures
15 partially defined type phase change material structures
151 Part I
152 Part II
153 phase-change material layers
Electrode on 16
161 upper electrode layers
17 extraction electrodes
18 second insulation material layers
19 the 3rd insulation material layers
Detailed description of the invention
Below by way of specific instantiation, embodiments of the present invention being described, those skilled in the art the content disclosed by this specification can understand other advantages and effect of the present invention easily. The present invention can also be carried out by additionally different detailed description of the invention or apply, and the every details in this specification based on different viewpoints and application, can also carry out various modification or change under the spirit without departing from the present invention.
Refer to Fig. 1��Figure 14. It should be noted that, the diagram provided in the present embodiment only illustrates the basic conception of the present invention in a schematic way, though only display component count with relevant assembly in the present invention but not when implementing according to reality, shape and size drafting in diagram, during its actual enforcement, the kenel of each assembly, quantity and ratio can be a kind of random change, and its assembly layout kenel is likely to increasingly complex.
Referring to Fig. 1, the present invention provides the manufacture method of a kind of phase-change memory cell comprising partially defined type phase change material structure, described in comprise partially defined type phase change material structure the manufacture method of phase-change memory cell at least comprise the following steps:
1) providing substrate, form at least one bottom electrode in described substrate, described bottom electrode is embedded in described substrate, and the upper surface flush of the upper surface of described bottom electrode and described substrate;
2) add thermode in the upper surface formation of described bottom electrode, and form the first insulation material layer at the described described substrate surface added between thermode;
3) adopt back and add thermode and described first insulation material layer described in carving technology etching removal part, in described described first insulation material layer added above thermode, form limit type pore structure;
4) in described limit type pore structure, form part limit type phase change material structure, and form electrode on described partially defined type phase change material structure surface;
5) extraction electrode is formed in described upper electrode surface.
In step 1) in, refer to the S1 step in Fig. 1 and Fig. 2, it is provided that substrate 10, in described substrate 10, form at least one bottom electrode 11, described bottom electrode 11 is embedded in described substrate 10, and the upper surface flush of the upper surface of described bottom electrode 11 and described substrate 10.
Exemplarily, described substrate 10 can be any one conventional semiconductor substrate, such as Si substrate or Ge substrate etc.
Exemplarily, it is possible to adopt sputtering method, evaporation, chemical vapour deposition technique, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam epitaxy, atomic vapor deposition method or atomic layer deposition method to form described bottom electrode 11 in described substrate 10. The alloy material that the material of described bottom electrode 11 can be any one monometallic material in W, Pt, Au, Ti, Al, Ag, Cu or Ni or the above-mentioned monometallic combination of materials of at least two becomes, or the nitride of above-mentioned monometallic material or oxide. Preferably, in the present embodiment, CVD (chemical vapour deposition (CVD)) method is adopted to prepare W as bottom electrode 11, the shape of described bottom electrode 11 can be cylindrical, the diameter of described bottom electrode 11 can be 70nm, can be highly 200nm, but be not limited, in other examples, shape and the size of described bottom electrode 11 can select as required.
Exemplarily, forming bottom electrode 11 described at least four in described substrate 10, described bottom electrode 11 is the dot matrixs distribution of at least two row and at least two row.
Exemplarily, described bottom electrode 11 runs through described substrate 10 and the lower surface flush of the lower surface of described bottom electrode 11 and described substrate 10.
In step 2) in, referring to the S2 step in Fig. 1 and Fig. 3, the upper surface at described bottom electrode 11 is formed and adds thermode 12, and forms the first insulation material layer 13 on described described substrate 10 surface added between thermode 12.
Exemplarily, adopt sputtering method, evaporation, chemical vapour deposition technique, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam epitaxy, atomic vapor deposition method or atomic layer deposition method formed at the upper surface of described bottom electrode 11 described in add thermode 12 so that described in add and form good ohm between thermode 12 with described bottom electrode 11 and be connected.
Exemplarily, the described thermode 12 that adds can add thermode for cylindrical heater electrode or blade-like, the diameter of described cylindrical heater electrode can be 1nm��100nm, can be highly 50nm��150nm, it can be 1nm��30nm �� 5nm��100nm that described blade-like adds the cross sectional dimensions of thermode, can be highly 50nm��150nm.
Exemplarily, the material adding thermode 12 described in can be the nitride of conduction, it is preferable that described in add the material of thermode 12 can be titanium nitride, titanium silicon nitride or TiAlN.
In one example, adopt atomic vapor deposition method to prepare TiN and add thermode 12 as described, described in add thermode 12 for cylindrical heater electrode, described in add the diameter of thermode 12 be 35nm, be highly 100nm.
Exemplarily, add described in adjacent and between thermode 12, deposit described first insulation material layer 13, described first insulation material layer 13 for isolate adjacent described in add thermode 12. The material of described first insulation material layer 13 can be nitride, oxide, nitrogen oxides or carbide.
In step 3) in, refer to the S3 step in Fig. 1 and Fig. 4, adopt back and add thermode 12 and described first insulation material layer 13 described in carving technology etching removal part, in described described first insulation material layer 13 added above thermode 12, form limit type pore structure 14.
Exemplarily, cylindrically shaped, conical, the rectangle or trapezoidal of the described limit type pore structure 14 of formation, the cross sectional dimensions of described limit type pore structure 14 can be 5nm��50nm �� 10nm��150nm, can be highly 10nm��100nm.
In step 4) in, refer to the S4 step in Fig. 1 and Fig. 5 to Fig. 9, in described limit type pore structure 14, form part limit type phase change material structure 15, and form electrode 16 on described partially defined type phase change material structure 15 surface.
Exemplarily, this step comprises the following steps:
4-1) adopt sputtering method, evaporation, chemical vapour deposition technique, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam epitaxy, atomic vapor deposition method or atomic layer deposition method in described limit type pore structure 14 and described first insulation material layer 13 surface forms phase-change material layers 153, as shown in Figure 5; Form the TEM profile of described phase-change material layers 153 in limit type pore structure 14 above cylindrical heater electrode 12 as shown in Figure 6, form the TEM profile of described phase-change material layers 153 in the limit type pore structure 14 above blade-like adds thermode 12 as shown in Figure 7; The material of described phase-change material layers 153 is chalcogenide compound, GeSb, SiSb or metal-oxide; In one example, magnetron sputtering method is adopted to utilize Ge in described limit type pore structure 142Sb2Te5Alloys target prepares Ge2Sb2Te5Phase-change material layers, technological parameter is: background air pressure is 1 �� 10-5Pa, during sputtering, Ar gas air pressure is 0.2Pa, and sputtering power is 200W, and underlayer temperature is 25 DEG C, and film thickness is 100nm;
Sputtering method, evaporation, chemical vapour deposition technique, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam epitaxy, atomic vapor deposition method or atomic layer deposition method 4-2) is adopted to form upper electrode layer 161 on described phase-change material layers 153 surface, as shown in Figure 8; The material of described upper electrode layer 161 is any one in monometallic material W, Pt, Au, Ti, Al, Ag, Cu and Ni, or its nitride being combined into alloy material or nitrogen oxides; In one example, adopting magnetron sputtering method to prepare TiN upper electrode layer on described phase-change material layers 153 surface, technological parameter is: background air pressure is 1 �� 10-5Pa, during sputtering, air pressure is 0.2Pa, Ar/N2Gas flow ratio be 1:1, sputtering power is 300W, and underlayer temperature is 25 DEG C, and TiN is highly 40nm;
4-3) etch described upper electrode layer 161 and described phase-change material layers 153, form described upper electrode 16 and described partially defined type phase change material structure 15, as shown in Figure 9; It is formed over the TEM profile of described partially defined type phase change material structure 15 as shown in Figure 10 at cylindrical heater electrode 12; Adopt upper electrode layer 161 and described phase-change material layers 153 described in inductively coupled plasma lithographic method, form described upper electrode 16 and described partially defined type phase change material structure 15, the shape of the shape of described upper electrode 16 and size and described partially defined type phase change material structure 15 and equivalently-sized, in one example, the shape of described upper electrode 16 and described partially defined type phase change material structure 15 is square, and the length of side is 80nm.
Exemplarily, the vertical sectional shape of described partially defined type phase change material structure 15 is T-shaped, including Part I 151 and Part II 152, described Part I 151 fills up described limit type pore structure 14, described Part II 152 is positioned at the upper surface of described Part I 151, and the lateral dimension of described Part II 152 is more than the lateral dimension of described Part I 151.
Exemplarily, refer to Figure 11, step 4) after, described first insulation material layer 13 surface being additionally included between described partially defined type phase change material structure 15 and described upper electrode 16 forms the step of the second insulation material layer 18. Described second insulation material layer 18 is deposited between adjacent described partially defined type phase change material structure 15 and between adjacent described upper electrode 16, and described second insulation material layer 18 is for isolating adjacent described partially defined type phase change material structure 15 and adjacent described upper electrode 16; The material of described second insulation material layer 18 can be nitride, oxide, nitrogen oxides or carbide.
In step 5) in, referring to the S5 step in Fig. 1 and Figure 12, electrode 16 surface forms extraction electrode 17 on described.
Exemplarily, sputtering method, evaporation, chemical vapour deposition technique, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam epitaxy, atomic vapor deposition method or atomic layer deposition method electrode 16 surface on described is adopted to form extraction electrode 17. The material of described extraction electrode 17 can be any one in W, Pt, Au, Ti, Al, Ag, Cu and Ni, or wherein any two kinds be combined into alloy material.
Exemplarily, refer to Figure 13, step 5) after, described second insulation material layer 18 surface being additionally included between described extraction electrode 17 forms the step of the 3rd insulation material layer 19. Depositing described 3rd insulation material layer 18 between adjacent described extraction electrode 17, described 3rd insulation material layer 18 is for isolating adjacent described extraction electrode 17. The material of described 3rd insulation material layer 18 can be nitride, oxide, nitrogen oxides or carbide.
Exemplarily, described extraction electrode 17 is for by integrated with the control switch of this unit, drive circuit and peripheral circuit for described phase-change memory cell, thus preparing complete phase transformation memory device unit. The comparison diagram of the operation electric current comprising the phase-change memory cell of partially defined type phase change material structure and the phase-change memory cell of mushroom-shaped phase change material structure of the present invention is as shown in figure 14, as shown in Figure 14, the operation electric current adopting mushroom-shaped structure devices unit is about 1.2mA, and adopt the operation electric current of the device cell of the partially defined type phase change material structure of the present invention to be about 0.7mA, the range of decrease, more than 40%, embodies the superiority of the present invention intuitively.
The phase-change memory cell of the present invention adopts partially defined type phase change material structure, it is characterized in the restriction hole carving formation by adding thermode to return and fills phase-change material, the region undergone phase transition in phase-change memory phase-change process is made to be limited only to limit in hole, compared with the mushroom-shaped device architecture of tradition, owing to phase variable volume reduces, thus being substantially reduced device power consumption and improving phase velocity, and compared with complete limit type phase-change material device architecture, its advantage is that the CMP process that need not introduce phase-change material can be realized as complete limit type phase-change material device architecture low-power consumption and high speed characteristics, thus avoiding the damage in glossing process of the phase-change material upper surface.
Please continue to refer to Figure 12 and Figure 13, the present invention also provides for a kind of phase-change memory cell comprising partially defined type phase change material structure, the described phase-change memory cell comprising partially defined type phase change material structure adopts manufacture method described in such scheme to make and obtain, described in comprise partially defined type phase change material structure phase-change memory cell include: substrate 10; Bottom electrode 11, described bottom electrode 11 is embedded in described substrate 10, and the upper surface flush of upper surface and described substrate 10; Add thermode 12, described in add thermode 12 and be positioned at the upper surface of described bottom electrode 11; Partially defined type phase change material structure 15, described partially defined type phase change material structure 15 be positioned at described in add the surface of thermode 12; Upper electrode 16, described upper electrode 16 is positioned at the surface of described partially defined type phase change material structure 15; Extraction electrode 17, described extraction electrode 17 is positioned at the surface of described upper electrode 16.
Exemplarily, forming bottom electrode 11 described at least four in described substrate 10, described bottom electrode 11 is the dot matrixs distribution of at least two row and at least two row.
Exemplarily, described bottom electrode 11 runs through described substrate 10 and the lower surface flush of the lower surface of described bottom electrode 11 and described substrate 10.
Exemplarily, the described thermode 12 that adds can add thermode for cylindrical heater electrode or blade-like, the diameter of described cylindrical heater electrode can be 1nm��100nm, can be highly 50nm��150nm, it can be 1nm��30nm �� 5nm��100nm that described blade-like adds the cross sectional dimensions of thermode, can be highly 50nm��150nm.
Exemplarily, the material adding thermode 12 described in can be the nitride of conduction, it is preferable that described in add the material of thermode 12 can be titanium nitride, titanium silicon nitride or TiAlN.
Exemplarily, the vertical sectional shape of described partially defined type phase change material structure 15 is T-shaped, including Part I 151 and Part II 152, described Part I 151 fills up described limit type pore structure 14, described Part II 152 is positioned at the upper surface of described Part I 151, and the lateral dimension of described Part II 152 is more than the lateral dimension of described Part I 151.
Exemplarily, described in comprise partially defined type phase change material structure phase-change memory cell also include the first insulation material layer 13, described first insulation material layer 13 is on described described substrate 10 surface added between thermode 12 and described Part I 151. Described first insulation material layer 13 for isolate adjacent described in add thermode 12. The material of described first insulation material layer 13 can be nitride, oxide, nitrogen oxides or carbide.
Exemplarily, the described phase-change memory cell comprising partially defined type phase change material structure also includes the second insulation material layer 18 and the 3rd insulation material layer 19, described second insulation material layer 18 described partially defined type phase change material structure 15 and described on described first insulation material layer 13 surface between electrode 16, described 3rd insulation material layer 19 described second insulation material layer 18 surface between described extraction electrode 17. Described second insulation material layer 18 between adjacent described partially defined type phase change material structure 15 and adjacent described between electrode 16, described second insulation material layer 18 is for isolating adjacent described partially defined type phase change material structure 15 and adjacent described upper electrode 16; The material of described second insulation material layer 18 can be nitride, oxide, nitrogen oxides or carbide. Described 3rd insulation material layer 18 is between adjacent described extraction electrode 17, and described 3rd insulation material layer 18 is for isolating adjacent described extraction electrode 17; The material of described 3rd insulation material layer 18 can be nitride, oxide, nitrogen oxides or carbide.
In sum, the present invention provides a kind of phase-change memory cell comprising partially defined type phase change material structure and manufacture method, the manufacture method of the described phase-change memory cell comprising partially defined type phase change material structure at least comprises the following steps: 1) provide substrate, at least one bottom electrode is formed in described substrate, described bottom electrode is embedded in described substrate, and the upper surface flush of the upper surface of described bottom electrode and described substrate, 2) add thermode in the upper surface formation of described bottom electrode, and form the first insulation material layer at the described described substrate surface added between thermode, 3) adopt back and add thermode and described first insulation material layer described in carving technology etching removal part, in described described first insulation material layer added above thermode, form limit type pore structure, 4) in described limit type pore structure, form part limit type phase change material structure, and form electrode on described partially defined type phase change material structure surface, 5) extraction electrode is formed in described upper electrode surface. the phase-change memory cell of the present invention adopts partially defined type phase change material structure, it is characterized in the restriction hole carving formation by adding thermode to return and fills phase-change material, the region undergone phase transition in phase-change memory phase-change process is made to be limited only to limit in hole, compared with the mushroom-shaped device architecture of tradition, phase variable volume significantly reduces, and the Part II of T-shaped phase-change material is in crystalline state all the time, can as the seed crystal of T-shaped phase-change material Part I crystallization in the crystallization operating process of device cell, accelerate crystallization process, device power consumption can be substantially reduced and improve phase velocity, compared with complete limit type phase-change material device architecture, the CMP process of phase-change material need not be introduced, avoid the damage to phase-change material upper surface.
Above-described embodiment is illustrative principles of the invention and effect thereof only, not for the restriction present invention. Above-described embodiment all under the spirit and category of the present invention, can be modified or change by any those skilled in the art. Therefore, art has usually intellectual such as modifying without departing from all equivalences completed under disclosed spirit and technological thought or change, must be contained by the claim of the present invention.
Claims (16)
1. the manufacture method of the phase-change memory cell comprising partially defined type phase change material structure, it is characterised in that described manufacture method comprises the following steps:
1) providing substrate, form at least one bottom electrode in described substrate, described bottom electrode is embedded in described substrate, and the upper surface flush of the upper surface of described bottom electrode and described substrate;
2) add thermode in the upper surface formation of described bottom electrode, and form the first insulation material layer at the described described substrate surface added between thermode;
3) adopt back and add thermode and described first insulation material layer described in carving technology etching removal part, in described described first insulation material layer added above thermode, form limit type pore structure;
4) in described limit type pore structure, form part limit type phase change material structure, and form electrode on described partially defined type phase change material structure surface;
5) extraction electrode is formed in described upper electrode surface.
2. the manufacture method of the phase-change memory cell comprising partially defined type phase change material structure according to claim 1, it is characterized in that: described step 1) in, adopt sputtering method, evaporation, chemical vapour deposition technique, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam epitaxy, atomic vapor deposition method or atomic layer deposition method to form described bottom electrode in described substrate.
3. the manufacture method of the phase-change memory cell comprising partially defined type phase change material structure according to claim 1, it is characterized in that: described step 2) in, adopt sputtering method, evaporation, chemical vapour deposition technique, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam epitaxy, atomic vapor deposition method or atomic layer deposition method formed at the upper surface of described bottom electrode described in add thermode.
4. the manufacture method of the phase-change memory cell comprising partially defined type phase change material structure according to claim 1, it is characterized in that: described step 2) in, add thermode described in being formed and can add thermode for cylindrical heater electrode or blade-like, the diameter of described cylindrical heater electrode is 1nm��100nm, it is highly 50nm��150nm, it is 1nm��30nm �� 5nm��100nm that described blade-like adds the cross sectional dimensions of thermode, is highly 50nm��150nm.
5. the manufacture method of the phase-change memory cell comprising partially defined type phase change material structure according to claim 1, it is characterized in that: described step 3) in, cylindrically shaped, conical, the rectangle or trapezoidal of the described limit type pore structure formed, the cross sectional dimensions of described limit type pore structure is 5nm��50nm �� 10nm��150nm, is highly 10nm��100nm.
6. the manufacture method of the phase-change memory cell comprising partially defined type phase change material structure according to claim 1, it is characterised in that: described step 4) comprise the following steps:
4-1) adopt sputtering method, evaporation, chemical vapour deposition technique, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam epitaxy, atomic vapor deposition method or atomic layer deposition method in described limit type pore structure and described first insulation material layer surface forms phase-change material layers;
Sputtering method, evaporation, chemical vapour deposition technique, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam epitaxy, atomic vapor deposition method or atomic layer deposition method 4-2) is adopted to form upper electrode layer on described phase-change material layers surface;
4-3) etch described upper electrode layer and described phase-change material layers, form described upper electrode and described partially defined type phase change material structure.
7. the manufacture method of the phase-change memory cell comprising partially defined type phase change material structure according to claim 1 or 6, it is characterized in that: the vertical sectional shape of described partially defined type phase change material structure is T-shaped, including Part I and Part II, described Part I fills up described limit type pore structure, described Part II is positioned at the upper surface of described Part I, and the lateral dimension of described Part II is more than the lateral dimension of described Part I.
8. the manufacture method of the phase-change memory cell comprising partially defined type phase change material structure according to claim 1, it is characterized in that: step 4) after, the described first insulation material layer surface being additionally included between described partially defined type phase change material structure and described upper electrode forms the step of the second insulation material layer.
9. the manufacture method of the phase-change memory cell comprising partially defined type phase change material structure according to claim 1, it is characterized in that: described step 5) in, adopt sputtering method, evaporation, chemical vapour deposition technique, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam epitaxy, atomic vapor deposition method or atomic layer deposition method to form extraction electrode in described upper electrode surface.
10. the manufacture method of the phase-change memory cell comprising partially defined type phase change material structure according to claim 1, it is characterized in that: step 5) after, the described second insulation material layer surface being additionally included between described extraction electrode forms the step of the 3rd insulation material layer.
11. the phase-change memory cell comprising partially defined type phase change material structure, it is characterised in that described in comprise partially defined type phase change material structure phase-change memory cell include:
Substrate;
Bottom electrode, is embedded in described substrate, and the upper surface flush of upper surface and described substrate;
Add thermode, be positioned at the upper surface of described bottom electrode;
Partially defined type phase change material structure, adds the surface of thermode described in being positioned at;
Upper electrode, is positioned at the surface of described partially defined type phase change material structure;
Extraction electrode, is positioned at the surface of described upper electrode.
12. the phase-change memory cell comprising partially defined type phase change material structure according to claim 11, it is characterised in that: described bottom electrode runs through described substrate and the lower surface flush of the lower surface of described bottom electrode and described substrate.
13. the phase-change memory cell comprising partially defined type phase change material structure according to claim 11, it is characterized in that: described in add thermode and can add thermode for cylindrical heater electrode or blade-like, the diameter of described cylindrical heater electrode is 1nm��100nm, it is highly 50nm��150nm, it is 1nm��30nm �� 5nm��100nm that described blade-like adds the cross sectional dimensions of thermode,, it is highly 50nm��150nm.
14. the phase-change memory cell comprising partially defined type phase change material structure according to claim 11, it is characterized in that: the vertical sectional shape of described partially defined type phase change material structure is T-shaped, including Part I and Part II, described Part I is positioned at described heating electrode surface, described Part II is positioned at the upper surface of described Part I, and the lateral dimension of described Part II is more than the lateral dimension of described Part I.
15. the phase-change memory cell comprising partially defined type phase change material structure according to claim 14, it is characterized in that: also include the first insulation material layer, described first insulation material layer is at the described described substrate surface added between thermode and described Part I.
16. the phase-change memory cell comprising partially defined type phase change material structure according to claim 11, it is characterized in that: also include the second insulation material layer and the 3rd insulation material layer, described second insulation material layer described partially defined type phase change material structure and described on described first insulation material layer surface between electrode, described 3rd insulation material layer described second insulation material layer surface between described extraction electrode.
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