CN105633294A - Organic luminescent device structure and preparation method thereof - Google Patents

Organic luminescent device structure and preparation method thereof Download PDF

Info

Publication number
CN105633294A
CN105633294A CN201410608464.0A CN201410608464A CN105633294A CN 105633294 A CN105633294 A CN 105633294A CN 201410608464 A CN201410608464 A CN 201410608464A CN 105633294 A CN105633294 A CN 105633294A
Authority
CN
China
Prior art keywords
rete
oled
layer
dbr
oled structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410608464.0A
Other languages
Chinese (zh)
Inventor
张明月
邹忠哲
施秉彝
祝文秀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EverDisplay Optronics Shanghai Co Ltd
Original Assignee
EverDisplay Optronics Shanghai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EverDisplay Optronics Shanghai Co Ltd filed Critical EverDisplay Optronics Shanghai Co Ltd
Priority to CN201410608464.0A priority Critical patent/CN105633294A/en
Publication of CN105633294A publication Critical patent/CN105633294A/en
Pending legal-status Critical Current

Links

Abstract

The invention provides an organic luminescent device structure and a preparation method thereof. Based on a traditional OLED device structure, a Bragg reflection (DBR) membrane layer is arranged above a middle refractive index layer (Index layer), the intensity of the emitted high-energy short-wave blue light is greatly reduced, and the damage to human eyes caused by the emitted light is reduced effectively. The DBR membrane layer can be matched with an organic optical microcavity in the OLED device, so that the resonant cavity effect of the OLED device is enhanced, and the color purity of the emitted light is further improved; in addition, the DBR membrane layer is prepared by a material with a water oxygen isolation characteristic, the water oxygen isolation characteristic of the OLED module can be optimized, the packaging property of the OLED can be further improved, and the performance and the service life of the preparation device are improved effectively.

Description

A kind of OLED structure and preparation method thereof
Technical field
The present invention relates to field of manufacturing semiconductor devices, particularly relate to a kind of OLED structure and preparation method thereof.
Background technology
Active matrix organic light-emitting diode (AMOLED) panel (ActiveMatrixOrganicLightEmittingDiode, it is called for short AMOLED) it is OLED (OrganicLight-EmittingDiode, Organic Light Emitting Diode) one of technology, comparing due to it and have the advantages such as response speed is very fast, contrast is higher, visual angle is wider with traditional liquid crystal panel, it is considered as the attention that follow-on Display Technique is subject to each producer.
But, the light that current OLED luminescent device is launched all comprises the high energy shortwave blue light with high intensity, and high energy shortwave blue light has high energy, show that it can penetrate the through retina of crystalline lens after deliberation, and can produce on the retina so that the free radical of pigment epithelium cell decline, and then can cause that photosensitive cell lacks nutrient and causes vision impairment.
At present, the damage that human eye is caused by the light launched to reduce OLED luminescent device, thickness generally by the organic film regulating OLED luminescent device, and then control micro-chamber altogether to reduce the intensity of high energy shortwave blue light in luminescent device transmitting light, but the restriction due to technological ability, the amplitude of accommodation making organic film thickness is very limited, causes in the light that current OLED luminescent device launches and still includes substantial amounts of high energy shortwave blue light, and namely human eye still can be caused damage by it.
It addition, the excitation that current OLED luminescent device is launched is all relatively low, and it is highly prone to water oxygen attack, and then reduces the performance and service life thereof of preparing device.
Summary of the invention
In view of the above problems, the present invention provides a kind of OLED structure, and described structure includes:
OLED module, has the front for luminescence and the back side relative to this front;
Intermediate-index layer, is arranged on the front of described OLED module;
DBR (DistributedBraggReflector, distribution Bragg reflector) rete, is arranged on described intermediate-index layer, to reduce the intensity of the high energy shortwave blue light that described OLED module is launched;
Wherein, described DBR rete includes at least two-layer refractive elements being sequentially stacked, and every layer of described refractive elements all includes the first rete and be arranged at the second rete of this first film layer; Described first rete and described second rete is alternately arranged is arranged on described intermediate-index layer, and the refractive index of described first rete is less than the refractive index of described second rete.
As a preferred embodiment, in described OLED structure:
Difference between refractive index and the refractive index of described first rete of described second rete is more than 0.5.
As a preferred embodiment, in described OLED structure:
The number of plies of described refractive elements is 2��6.
As a preferred embodiment, in described OLED structure:
The material of described DBR rete has the oxygen characteristic that blocks water.
As a preferred embodiment, in described OLED structure:
The thickness of described DBR rete less than 800nm, and this DBR rete for the reflectance of described high energy shortwave blue light more than 0.95.
As a preferred embodiment, in described OLED structure:
Described DBR rete is provided with optical microcavity, to improve the excitation of described OLED structure transmitting light.
As a preferred embodiment, the described OLED module in described OLED structure includes:
Anode;
Organic luminous layer, is arranged on described anode;
Negative electrode, is arranged on described organic luminous layer;
Wherein, described intermediate-index layer is arranged on described negative electrode, and is provided with optical microcavity in described organic luminous layer.
As a preferred embodiment, in described OLED structure:
The wavelength of described high energy shortwave blue light is less than 435nm.
The present invention has also stated that a kind of method preparing OLED structure, can be applicable to prepare the OLED structure described in above-mentioned any one, and described method includes:
The OLED module that one front is provided with intermediate-index layer is provided;
Cryochemistry vapor deposition process (ChemicalVaporDeposition is called for short CVD) is adopted to prepare DBR rete on described intermediate-index layer, to reduce the intensity of the high energy shortwave blue light that described OLED module is launched;
Wherein, described DBR rete includes at least two-layer refractive elements being sequentially stacked, and every layer of described refractive elements all includes the first rete and be arranged at the second rete of this first film layer, and the refractive index of described first rete is less than the refractive index of described second rete.
Technique scheme has the advantage that or beneficial effect:
Technical scheme in the present invention can based on the basis of tradition OLED structure, by arranging a Bragg reflection (DBR) rete on intermediate-index layer (Indexlayer), so that the intensity of the high energy shortwave blue light of its transmitting is greatly reduced, and then the damage that human eye is caused by the light effectively reducing its transmitting, and this DBR rete also can mate with the organic optical microcavity (Micro-cavity) in OLED, to strengthen the resonant cavity effect of OLED, and then improve its excitation launching light; Meanwhile, the material with isolation water oxygen characteristic is adopted to prepare above-mentioned OBR rete, moreover it is possible to optimize the water oxygen barrier properties of OLED module, further to strengthen the encapsulation performance of OLED, be effectively improved the performance and service life thereof of preparing device.
Accompanying drawing explanation
With reference to appended accompanying drawing, to describe embodiments of the invention more fully. But, appended accompanying drawing is merely to illustrate and sets forth, is not intended that limitation of the scope of the invention.
Fig. 1 is the cross-sectional view of OLED structure in one embodiment of the invention;
Fig. 2 is the structural representation of DBR rete in OLED structure in one embodiment of the invention;
Fig. 3 is the model configuration schematic diagram of the embodiment of the present invention;
Wherein, transverse axis in Fig. 3 represents wavelength (wavelength), the longitudinal axis represents light intensity (emission), B-with represents and adopts the spectrum figure of blue light after technical scheme, B-without represents the spectrum figure of the blue light adopting traditional handicraft, R-with represents and adopts the spectrum figure of HONGGUANG after technical scheme, R-without represents the spectrum figure of the HONGGUANG adopting traditional handicraft, G-with represents and adopts the spectrum figure of green glow after technical scheme, and G-without represents the spectrum figure of the green glow adopting traditional handicraft.
Detailed description of the invention
OLED structure provided in the embodiment of the present invention and preparation method thereof, can based on the basis of tradition AMOLED device architecture, by adopting low temperature CVD process to prepare DBR rete on the intermediate-index layer (indexlayer) of OLED modular structure, to utilize DBR rete to reduce the intensity (namely reducing blue light injury (reducingbluedamage)) of the blue light that OLED module is launched, and then effectively reduce its damage that human eye is caused; Simultaneously as the material of DBR rete has the stronger oxygen characteristic that blocks water, moreover it is possible to further improve the sealing effectiveness of display device, and arrange microcavity in DBR rete and then can further improve the excitation of the constituted display device of OLED module.
Below in conjunction with the drawings and specific embodiments, the OLED encapsulating material structure sheaf of the present invention is described in detail.
Embodiment one:
Fig. 1 is the cross-sectional view of OLED structure in one embodiment of the invention; As it is shown in figure 1, the OLED structure in the present embodiment includes OLED module 1, intermediate-index layer (indexlayer) 2 and OBR rete 3; Above-mentioned OLED module 1 has luminous front and the back side relative to this front, intermediate-index layer 2 is arranged on the front of above-mentioned OLED module 1, OBR rete 3 is then arranged on intermediate-index layer 2, the sandwich structure centrally located to form intermediate-index layer 2; Owing to OBR rete has bigger reflectance for blue light, the intensity of blue light can be effectively reduced, in particular for the high energy shortwave blue light that human eye is had damage, such as the wavelength blue light less than 435nm, its effect becomes apparent from, so this OBR rete 3 can effectively reduce the intensity of blue light from the light that OLED module 1 is launched, and then reduce the damage that human eye is caused by display device.
Preferably, above-mentioned OLED module 1 can be conventional AMOLED structure, anode (Anode) 11, organic luminous layer (organic) 12 and negative electrode (catholic) 13 can be included, organic luminous layer 12 is arranged on anode (ITO/Ag/ITO) 11, negative electrode (Mg/Ag) 13 is arranged on organic luminous layer 12, and the upper surface of negative electrode 13 can as luminous front, and then the lower surface of anode 11 then can as the back side relative to above-mentioned front.
Preferably, above-mentioned organic luminous layer 12 includes the first hole injection layer (HoleInjectionLayer, be called for short HIL) the 121, second hole injection layer the 122, the 3rd hole injection layer 123, hole transmission layer (HoleTransportLayer, be called for short HTL) 124, luminescent layer (EmittingLayer, it is called for short EML) 125 and electron transfer layer (ElectronTransportLayer, be called for short ETL) 126; First hole injection layer 121 is arranged on anode 11, second hole injection layer 122 arranges on the first hole injection layer 121,3rd hole injection layer 123 arranges on the second hole injection layer 122, hole transmission layer 124 is arranged on the 3rd hole injection layer 123, luminescent layer 125 is arranged on hole transmission layer 124, and electron transfer layer 126 is arranged on luminescent layer 125; Luminescent layer 125 is used for launching light, and light sequentially passes through above-mentioned electron transfer layer 126 and negative electrode 13 is launched.
Preferably, organic luminous layer 12 also can arrange optical microcavity, to be strengthened the excitation of OLED transmitting light by resonant cavity effect.
Fig. 2 is the structural representation of DBR rete in OLED structure in one embodiment of the invention; As shown in Figure 2, DBR rete 3 in the present embodiment includes some refractive elements 31 being sequentially stacked, the first rete 311 that each refractive elements 31 all includes being positioned below and be positioned at the second rete 312 on this first rete 311, and first the refractive index of rete 311 be less than the refractive index of the second rete 312, as the refractive index of the second rete 312 arranged can be made to deduct the value of refractive index of the first rete 311 more than 0.5, so that refractive elements 31 can effectively reduce OLED module 1 and launch the intensity of blue light in light.
Preferably, dielectric material growth Bragg mirror is generally heteromorphs or amorphousness, it is not necessary to Lattice Matching, and the material of the first above-mentioned rete 311 and the second rete 312 all can be selected for the material with the oxygen characteristic that blocks water, such as SiO2��Si��SiC��Si3N4��TiO2��Al2O3��MgO��SiC��BeO��CaF2��ZnSe��MgF2Deng in one or more combination so that preparation DBR rete have hinder water oxygen characteristic, can further improve the packaging effect of the device architecture of preparation, prepare performance and the service life thereof of device with raising.
Preferably, it is possible to also can arrange optical microcavity in DBR rete 3, further to strengthen the resonant cavity effect of OLED module, and then the excitation of light launched by the device architecture improving preparation.
Further, so that the DBR rete 3 of preparation better mates with the OLED module 1 being disposed below, the DBR rete 3 prepared can be made more than 0.95 for the reflectance of high energy shortwave blue light, and in order to reduce the impact for light emission rate, the thickness of DBR rete 3 can be made to be less than 800nm; Particularly in AMOLED processing procedure, the processing procedure brought in order to avoid rete overabundance of data affects, and can make the number of the refractive elements 31 arranged in above-mentioned DBR rete 3 between 2��6; As the refractive elements 31 of 2,4 or 6 can be arranged, and make it be sequentially stacked, and then make in the DBR rete 3 of formation, first rete 311 and the arrangement of the second rete 312 alternating orthogonal, and cover, at intermediate-index layer 2 upper surface, the first rete 311 that refractive index is less, what be positioned at the superiors is then the second rete 312 that refractive index is bigger, to ensure to reach the effect (namely obtaining higher reflectance) of Prague minute surface.
Wherein, the above-mentioned refractive index difference between the first rete 311 and the second rete 312 is more big, and the reflection bandwidth of Bragg mirror is more wide, and the number of its required refractive elements 31 arranged is more few accordingly.
Embodiment two
The present invention also provides for a kind of method preparing OLED structure, and it can be applicable to prepare OLED structure described in above-described embodiment one, can based on the basis of above-described embodiment one and Fig. 1��2, and the method includes:
First, one OLED module is provided, the AMOLED structure that this OLED module can be prepared based on traditional technique, structure that can be shown in Figure 1, this OLED module 1 can include anode (Anode) 11, be arranged at the organic luminous layer 12 on anode (ITO/Ag/ITO) 11, it is arranged at the negative electrode (Mg/Ag) 13 on organic luminous layer 12, and the upper surface of this negative electrode 13 can as luminous front, and then the lower surface of anode 11 then can as the back side relative to above-mentioned front.
Secondly, on the front of the negative electrode 13 of above-mentioned OLED module 1, prepare intermediate-index layer 2 (preparation technology of this intermediate-index layer 2 may be used without the means of routine and is prepared, therefore its concrete technique just refuses tired stating at this).
Afterwards, on intermediate-index layer 2, continue preparation DBR rete 3, and then the device architecture shown in Fig. 1��2 is shown in formation, to reduce the intensity of blue light in the light that above-mentioned OLED module 1 is launched.
Preferably, above-mentioned DBR rete 3 is mainly used in reducing the intensity of high energy shortwave blue light in the light that OLED module 1 is launched, such as the wavelength blue light etc. less than 435nm.
Preferably, in order to avoid processing procedure causes damage for the device architecture (such as OLED module 1, intermediate-index layer 2 etc.) prepared, and the unfavorable factor such as secondary power interference, low temperature chemical vapor deposition technique can be adopted to prepare above-mentioned DBR rete 3, for instance carry out above-mentioned Chemical cleaning depositing operation (CVD) in the temperature environment lower than 150 DEG C.
Preferably, above-mentioned DBR rete 3 includes some refractive elements 31 being sequentially stacked, the first rete 311 that each refractive elements 31 all includes being positioned below and be positioned at the second rete 312 on this first rete 311, and first the refractive index of rete 311 be less than the refractive index of the second rete 312, as the refractive index of the second rete 312 arranged can be made to deduct the value of refractive index of the first rete 311 more than 0.5, so that refractive elements 31 can effectively reduce OLED module 1 and launch the intensity of blue light in light; In concrete preparation technology, can pass through to adopt the staggered growth of two kinds of materials with different refractivity, and then form above-mentioned the first rete 311 and the second rete 312 being vertically staggered.
Owing to the method for the present embodiment can be used for preparing OLED structure described in above-described embodiment one, therefore the structure recorded in corresponding embodiment one and parameter attribute may be applicable to the present embodiment, simple and clear in order to set forth, just not set forth one by one at this.
In order to better illustrate the beneficial effect brought of the present invention, citing below is described in detail:
First, before adopting the present processes to carry out technique preparation, so that the DBR rete of preparation better mates with the OLED rete being disposed below, the reflectance of this DBR rete can be calculated first with formula [1], to guarantee that the reflectance of DBR rete of preparation is more than 0.95;
Above-mentioned formula [1] is: R = [ n A - ( n L n H ) m n G n A + ( n L n H ) m n G ] ;
Wherein, R is the reflectance of DBR rete, nGFor refractive index of substrate, nGIt is the refractive index (i.e. high index of refraction) of the second rete, nLBeing the refractive index (i.e. low-refraction) of the first rete, m is the number of plies of refractive elements, nARefractive index for negative electrode.
Continue to set centre wavelength as ��0, any wavelength is ��, the ratio of corresponding wavelengthReflection bandwidth formula [2] is:
So, reflection bandwidth can be obtained only relevant with the difference between the refractive index of the first rete and the second rete, namely refractive index difference is more big, and the reflection bandwidth of Bragg mirror is more wide, and the refractive elements of its required growth is more few accordingly.
Further, after the refractive index difference of selected first rete and the second rete, the simulation of spectrum, colour code etc. can be carried out by optical simulation software; Such as when DBR rete designs, the thickness of selected first rete and the second rete is 100nm, and the material of the first rete is SiO, the material of the second rete is SiC, refractive elements is 2, and adopt tradition OLED structure be simulated after, Fig. 3 and following table can be obtained:
Referring to above-mentioned form and Fig. 3 it can be seen that by after adding DBR rete, blue spectrum moves to right, wavelength can be made to reduce by 40% in the intensity of below 435nm blue light, and the impact of R/G colour code is all in range of error, and NTSC does not reduce.
In sum, in the above embodiment of the present invention, by Bragg reflection (DBR) rete arranged on intermediate-index layer, the intensity of the high energy shortwave blue light of its transmitting can be greatly reduced, and then the damage that human eye is caused by the light effectively reducing its transmitting, and this DBR rete also can mate with the organic optical microcavity in OLED, moreover it is possible to strengthen the resonant cavity effect of OLED, and then improve its excitation launching light; Meanwhile, the material with isolation water oxygen characteristic is adopted to prepare above-mentioned OBR rete, moreover it is possible to optimize the water oxygen barrier properties of OLED module, further to strengthen the encapsulation performance of OLED, be effectively improved the performance and service life thereof of preparing device.
For a person skilled in the art, after reading described above, various changes and modifications will be apparent to undoubtedly. Therefore, appending claims should regard whole variations and modifications of the true intention containing the present invention and scope as. In Claims scope, the scope of any and all equivalence and content, be all considered as still belonging to the intent and scope of the invention.

Claims (9)

1. an OLED structure, it is characterised in that described structure includes:
OLED module, has for luminous front;
Intermediate-index layer, is arranged on the front of described OLED module;
DBR rete, is arranged on described intermediate-index layer, to reduce the intensity of the high energy shortwave blue light that described OLED module is launched;
Wherein, described DBR rete includes at least two-layer refractive elements being sequentially stacked, and every layer of described refractive elements all includes the first rete and be arranged at the second rete of this first film layer; Described first rete and described second rete is alternately arranged is arranged on described intermediate-index layer, and the refractive index of described first rete is less than the refractive index of described second rete.
2. OLED structure as claimed in claim 1, it is characterised in that the difference between refractive index and the refractive index of described first rete of described second rete is more than 0.5.
3. OLED structure as claimed in claim 1, it is characterised in that the number of plies of described refractive elements is 2��6.
4. OLED structure as claimed in claim 1, it is characterised in that the material of described DBR rete has the oxygen characteristic that blocks water.
5. OLED structure as claimed in claim 1, it is characterised in that the thickness of described DBR rete less than 800nm, and this DBR rete for the reflectance of described high energy shortwave blue light more than 0.95.
6. OLED structure as claimed in claim 1, it is characterised in that be provided with optical microcavity in described DBR rete, to improve the excitation of described OLED structure transmitting light.
7. OLED structure as claimed in claim 1, it is characterised in that described OLED module includes:
Anode;
Organic luminous layer, is arranged on described anode;
Negative electrode, is arranged on described organic luminous layer;
Wherein, described intermediate-index layer is arranged on described negative electrode, and is provided with optical microcavity in described organic luminous layer.
8. OLED structure as claimed in claim 1, it is characterised in that the wavelength of described high energy shortwave blue light is less than 435nm.
9. the method preparing OLED structure, it is characterised in that being applied to preparation OLED structure as described in any one in claim 1��8, described method includes:
The OLED module that one front is provided with intermediate-index layer is provided;
Cryochemistry vapor deposition process is adopted to prepare DBR rete on described intermediate-index layer, to reduce the intensity of the high energy shortwave blue light that described OLED module is launched;
Wherein, described DBR rete includes at least two-layer refractive elements being sequentially stacked, and every layer of described refractive elements all includes the first rete and be arranged at the second rete of this first film layer, and the refractive index of described first rete is less than the refractive index of described second rete.
CN201410608464.0A 2014-10-31 2014-10-31 Organic luminescent device structure and preparation method thereof Pending CN105633294A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410608464.0A CN105633294A (en) 2014-10-31 2014-10-31 Organic luminescent device structure and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410608464.0A CN105633294A (en) 2014-10-31 2014-10-31 Organic luminescent device structure and preparation method thereof

Publications (1)

Publication Number Publication Date
CN105633294A true CN105633294A (en) 2016-06-01

Family

ID=56048021

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410608464.0A Pending CN105633294A (en) 2014-10-31 2014-10-31 Organic luminescent device structure and preparation method thereof

Country Status (1)

Country Link
CN (1) CN105633294A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109148706A (en) * 2018-08-29 2019-01-04 京东方科技集团股份有限公司 Luminescent device and its manufacturing method, display device
CN113178533A (en) * 2021-04-14 2021-07-27 武汉华星光电半导体显示技术有限公司 Display panel and display device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6366017B1 (en) * 1999-07-14 2002-04-02 Agilent Technologies, Inc/ Organic light emitting diodes with distributed bragg reflector
CN101493532A (en) * 2008-01-24 2009-07-29 Tcl集团股份有限公司 Display device
CN103646958A (en) * 2013-11-18 2014-03-19 上海和辉光电有限公司 Display panel and method of making same
CN103730601A (en) * 2013-12-26 2014-04-16 京东方科技集团股份有限公司 Bragg reflection reflector distribution structure, preparation method thereof and organic light-emitting diode structure

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6366017B1 (en) * 1999-07-14 2002-04-02 Agilent Technologies, Inc/ Organic light emitting diodes with distributed bragg reflector
CN101493532A (en) * 2008-01-24 2009-07-29 Tcl集团股份有限公司 Display device
CN103646958A (en) * 2013-11-18 2014-03-19 上海和辉光电有限公司 Display panel and method of making same
CN103730601A (en) * 2013-12-26 2014-04-16 京东方科技集团股份有限公司 Bragg reflection reflector distribution structure, preparation method thereof and organic light-emitting diode structure

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109148706A (en) * 2018-08-29 2019-01-04 京东方科技集团股份有限公司 Luminescent device and its manufacturing method, display device
US10930871B2 (en) 2018-08-29 2021-02-23 Boe Technology Group Co., Ltd. Light emitting device and method for manufacturing the same, and display device
CN109148706B (en) * 2018-08-29 2021-10-26 京东方科技集团股份有限公司 Light emitting device, method of manufacturing the same, and display apparatus
CN113178533A (en) * 2021-04-14 2021-07-27 武汉华星光电半导体显示技术有限公司 Display panel and display device

Similar Documents

Publication Publication Date Title
CN109545832B (en) Organic light emitting diode display substrate, preparation method thereof and display device
CN106158905A (en) Emitting device structure and organic luminous panel
US10446798B2 (en) Top-emitting WOLED display device
RU2530484C2 (en) Organic light-emitting diode substrate consisting of transparent conductive oxide (tco) and anti-iridescent intermediate layer
CN105870358B (en) A kind of preparation method of scattering layer, Organic Light Emitting Diode
CN105304684A (en) Color display device and manufacturing method thereof
CN104409468A (en) Display substrate, display device thereof, and manufacturing method thereof
CN110299472A (en) A kind of array substrate, display panel and display device
CN102832356A (en) Organic light-emitting diode (OLED) packaging structure, manufacturing method thereof and luminescent device
CN104466026A (en) Light conversion unit having color conversion function and application thereof
CN110379938B (en) Asymmetric ultraviolet microcavity organic light-emitting diode and preparation method thereof
CN102610631B (en) OLED (organic light-emitting diode) display device with adjustable surface color and preparation method of OLED display device
CN105810840B (en) A kind of organic electroluminescence device
US11882721B2 (en) Display panel and display device comprising inorganic packaging layer having multiple inorganic sublayers
CN104637981B (en) Organic EL display panel
CN108630822A (en) A kind of component and top emission OLED device of top emission OLED device
CN106717121A (en) Organic electroluminescence device and method for manufacturing organic electroluminescence device
CN110323344A (en) Light emitting device including the optics cavity with low angle color shift
CN107221605A (en) Organic light-emitting structure and display device
CN105742521A (en) Micro-cavity organic light emitting diode (OLED) device
CN105161584A (en) QLED having optical microcavity structure and preparation method thereof
CN103390711B (en) A kind of LED chip with electrode reflecting layer and preparation method thereof
JP2011108552A (en) Method of manufacturing organic el device
KR101268532B1 (en) Organic electroluminescent device
CN105633294A (en) Organic luminescent device structure and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20160601

RJ01 Rejection of invention patent application after publication