CN105656314A - Novel switching power supply slaver topology - Google Patents
Novel switching power supply slaver topology Download PDFInfo
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- CN105656314A CN105656314A CN201610157212.XA CN201610157212A CN105656314A CN 105656314 A CN105656314 A CN 105656314A CN 201610157212 A CN201610157212 A CN 201610157212A CN 105656314 A CN105656314 A CN 105656314A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33561—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having more than one ouput with independent control
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
- H02M3/33576—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer
Abstract
Provided is novel switching power supply slaver topology. A slaver output winding is arranged on the master output side, the dotted terminal of the slaver output winding is connected with an electrode d of an MOS transistor Q1, an electrode s of the MOS transistor Q1 is connected with an inductance coil in series to form a slaver output end, and the electrode s of the MOS transistor Q1 is connected with the inductance coil and a capacitor in series and then grounded. The electrode s of the MOS transistor Q1 is connected with an electrode d of an MOS transistor Q3, an electrode s of the MOS transistor Q3 is grounded, and an electrode g of the MOS transistor Q1 and an electrode g of the MOS transistor Q3 are connected with work voltage. The work efficiency is high, output is stable, and the novel switching power supply slaver topology can be suitable for the condition that master voltage and slaver voltage are greatly different, and is wide in application range. The number of added devices is small, and cost is low.
Description
Technical field
The present invention relates to a kind of voltage conversion circuit, particularly relate to the voltage conversion circuit of a kind of voltage conversion efficiency.
Background technology
For Switching Power Supply, one is insulating power supply: be not directly electrically connected between input circuit and the output loop of power supply, is the high-impedance state of insulation, it does not have current loop between input and output. Another kind is non-insulating power supply: have direct current loop between input and output, for instance, it is common ground between input and output. Non-isolated power supply mainly has: Buck, Boost, Buck-Boost etc., and insulating power supply mainly has various with topologys such as the flyback of isolating transformer, normal shock, half-bridge, LLC.
Switching Power Supply, according to different application and designing requirement, generally requires multiple-channel output. For requiring that the occasion of multiple-channel output has solution three kinds main at present.
Scheme 1 is as it is shown in figure 1, the ancillary coil being to increase transformator realizes the output of multichannel. This mode is simple, but there is a restrictive condition, the i.e. voltage of main road output (masteroutputvoltage) and bypass output (slaveroutputvoltage), it is necessary to proportional to the number of turns (slaverwindingturns) of the number of turns of transformator main road winding (masterwindingturns) and auxiliary winding.
But it is difficult to meet such a requirement in some application scenario. In this scenario, it is necessary to two diodes or MOSFET, and an inductance.
Scheme 2 is as in figure 2 it is shown, be another solution. Buck circuit is applied directly to after main road or the output of other bypass. Namely the output of main road be the input of bypass. In scheme 2, it is necessary to 1 diode and 1 MOSFET, and an inductance. In this scenario, the output voltage of main road necessarily be greater than the output voltage of bypass. When main road voltage and bypass voltage differences are little, this scheme can obtain good effect. If but main road voltage is far above bypass voltage, then can become very bad. The Buck dutycycle of bypass can be very little, causes that the ripple circuit within Buck is very big, and owing to Buck level needs to use pressure higher MOSFET, is also unfavorable for the raising of Buck stage efficiency.
Scheme 3 is as it is shown on figure 3, be mode more flexibly. In the manner, first by scope suitable for voltage initial setting to, then again through Buck level by output voltage stabilization on required voltage.This scheme is when main road and bypass voltage differences are bigger, and its efficiency performance can be better than scheme 2. But, scheme 3 needs four diodes or MOSFET and two inductance, and the pressure in cost and PCB space is bigger. The device that the program needs is many, and cost is high, takes up room big.
Summary of the invention
It is an object of the invention to provide a kind of novel switched power supply bypass topology, solve existing bypass output topology application scenario limited, use device too much, the uncontrollable technical problem of cost.
The novel switched power supply bypass topology of the present invention, at main road outlet side, bypass output winding is set, the Same Name of Ends of bypass output winding connects the d pole of metal-oxide-semiconductor Q1, forming bypass outfan, ground connection after the s pole series inductance of metal-oxide-semiconductor Q1 and electric capacity after the s pole series inductance of metal-oxide-semiconductor Q1, the s pole of metal-oxide-semiconductor Q1 connects the d pole of metal-oxide-semiconductor Q3, the s pole ground connection of metal-oxide-semiconductor Q3, the g pole of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q3 connects running voltage.
Bypass output winding is exported winding by part main road and is formed.
Also including metal-oxide-semiconductor Q2, the Same Name of Ends of bypass output winding connects the d pole of metal-oxide-semiconductor Q1, and the s pole of metal-oxide-semiconductor Q1 connects the s pole of metal-oxide-semiconductor Q2, and the g pole of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 connects running voltage, forms bypass outfan after the d pole series inductance of metal-oxide-semiconductor Q2;
The earth terminal of bypass output winding connects the s pole of metal-oxide-semiconductor Q3, and the d pole of metal-oxide-semiconductor Q3 connects the d pole of metal-oxide-semiconductor Q2, and the g pole of metal-oxide-semiconductor Q3 connects running voltage, is positioned at metal-oxide-semiconductor Q3 and the Capacitance parallel connection at inductance coil two ends, ground connection after inductance coil series capacitance.
The bypass output winding of isolation is set.
The Same Name of Ends of bypass output winding connects the s pole of metal-oxide-semiconductor Q1, and the d pole of metal-oxide-semiconductor Q1 connects the d pole of metal-oxide-semiconductor Q2, and the g pole of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 connects running voltage, forms bypass outfan after the s pole series inductance of metal-oxide-semiconductor Q2, replaces corresponding connection.
Effective operative duty cycles of the dutycycle of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2��bypass winding.
The novel switched power supply bypass topology of the present invention, work efficiency is high, output is stable, applicable bigger with main road and bypass voltage differences when, have wide range of applications. The number of devices added is less, less costly.
Accompanying drawing explanation
Fig. 1 is the electrical block diagram of the first Switching Power Supply multiple-channel output in prior art;
Fig. 2 is the electrical block diagram of the second Switching Power Supply multiple-channel output in prior art;
Fig. 3 is the electrical block diagram of the third Switching Power Supply multiple-channel output in prior art;
Fig. 4 is the electrical block diagram of this novel switched power supply bypass topology (isolated form);
The circuit connection diagram that Fig. 5 exports in conjunction with main road for this novel switched power supply bypass topology (isolated form);
Fig. 6 is the circuit connection diagram of another kind of cubicle switch in this novel switched power supply bypass topology (isolated form);
The simulation waveform figure that Fig. 7 exports in conjunction with main road for this novel switched power supply bypass topology (isolated form);
Fig. 8 is the circuit connection diagram of (non-isolation type) of this novel switched power supply bypass topology;
The simulation waveform figure that Fig. 9 exports in conjunction with main road for this novel switched power supply bypass topology (non-isolation type);
Simulation waveform figure during Figure 10 exports in conjunction with main road for this novel switched power supply bypass topology (non-isolation type), when the dutycycle of bypass is more than the dutycycle of main road;
Figure 11 is the electrical block diagram that this novel switched power supply bypass topology combines with half-bridge all wave rectification shape main road circuit;
Figure 12 is the electrical block diagram that this novel switched power supply bypass topology combines with full-bridge all wave rectification shape main road circuit;
Figure 13 is the electrical block diagram that this novel switched power supply bypass is topological and positive exciting synchronous rectification shape main road circuit combines;
Figure 14 is the electrical block diagram that this novel switched power supply bypass topology combines with half-bridge all wave rectification shape main road circuit;
Figure 15 is the electrical block diagram that this novel switched power supply bypass topology combines with the main road circuit of full-bridge full-wave rectifying circuit;
Figure 16 is the another kind of electrical block diagram that this novel switched power supply bypass topology combines with the main road circuit of half-bridge full-wave rectifying circuit;
Figure 17 is the another kind of electrical block diagram that this novel switched power supply bypass topology combines with the main road circuit of full-bridge full-wave rectifying circuit.
Detailed description of the invention
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
As shown in Figure 4, main road outlet side (maintransformermasteroutput) at main transformer, the bypass output winding of isolation is set, the Same Name of Ends of bypass output winding connects the d pole of metal-oxide-semiconductor Q1, the s pole of metal-oxide-semiconductor Q1 connects the s pole of metal-oxide-semiconductor Q2, the g pole of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 connects running voltage, forms bypass outfan after the d pole series inductance of metal-oxide-semiconductor Q2;
The earth terminal of bypass output winding connects the s pole of metal-oxide-semiconductor Q3, and the d pole of metal-oxide-semiconductor Q3 connects the d pole of metal-oxide-semiconductor Q2, and the g pole of metal-oxide-semiconductor Q3 connects running voltage, is positioned at metal-oxide-semiconductor Q3 and the Capacitance parallel connection at inductance coil two ends, ground connection after inductance coil series capacitance.
As it is shown in figure 5, the operation principle of the Switching Power Supply bypass topology of the present embodiment is similar with Buck circuit, but owing to there is negative pressure above ancillary coil W1 (i.e. bypass output winding), it is therefore desirable to add Q2 and intercept the impact of negative pressure.
As shown in Figure 6, on the basis basically identical with above-described embodiment, the Same Name of Ends of bypass output winding connects the s pole of metal-oxide-semiconductor Q1, the d pole of metal-oxide-semiconductor Q1 connects the d pole of metal-oxide-semiconductor Q2, the g pole of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 connects running voltage, forms bypass outfan after the s pole series inductance of metal-oxide-semiconductor Q2.
As shown in Figure 5, the polarity of bypass coil W1 is the same with main road coil W3, therefore in application, metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 need and metal-oxide-semiconductor Q7 opens simultaneously or time delay is open-minded, and the dutycycle of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 is necessarily less than metal-oxide-semiconductor Q7, because having no progeny when metal-oxide-semiconductor Q7 closes, the polarity of bypass coil W1 can, by just becoming negative, be the restrictive condition of this topology use.
The dutycycle of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 can be calculated obtaining by equation below.
The design procedure of bypass is as follows:
Step 1: list the output voltage of main road and bypass, the number of turn of main road transformator, and during main road work, the voltage that transformator bears.
Step 2: calculate the voltage that each circle coil of main road transformator bears.
Step 3: according to result of calculation above, selects to allow the number of turn of bypass coil of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 largest duty cycle.
Now, the voltage above bypass coil is:
Volageappliedonslaverwinding=turnsofslaverwinding �� volageappliedoneachtrun (4)
Step 4: according to result of calculation above, select the MOSFET model of metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2 and metal-oxide-semiconductor Q3.
Step 5: the calculating of bypass outputting inductance is the same with Buck circuit.
For actual product, main road output 30V, the number of turn of main road winding W4 and main road winding W5 is 2, and the dutycycle recommended is 50%.Therefore, the voltage that each circle coil of transformator bears is 15V. The dutycycle of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 can not more than 50% (i.e. effective operative duty cycles of bypass winding).
If the coil of bypass winding is 2 circles, then bypass winding voltage is 30V, and the dutycycle of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 is 16.7%.
And if bypass winding coil is 1 circle, then bypass winding voltage is 15V, and the dutycycle of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 is 33%, far above the dutycycle of scheme 2.
Being additionally, since now bypass winding voltage is 15V, and the platform voltage of metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2 and metal-oxide-semiconductor Q3 is 15V, it is possible to use the less MOSFET of electric pressure, such as uses the MOSFET of 30V. So can be conducive to the further lifting of efficiency.
As it is shown in fig. 7, the main road of Simulation results is output as 30V, bypass output 5V, it is achieved that the target of doubleway output.
Metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2 and metal-oxide-semiconductor Q7 are simultaneously open-minded, but turn off in advance. The dutycycle of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 is 33%, and the dutycycle of metal-oxide-semiconductor Q7 is 50%, meets metal-oxide-semiconductor Q1 and the metal-oxide-semiconductor Q2 dutycycle restrictive condition less than metal-oxide-semiconductor Q7 dutycycle.
The about 15V of platform voltage of metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2 and metal-oxide-semiconductor Q3, it is possible to use the less MOSFET of electric pressure.
As shown in Figure 8, Switching Power Supply bypass topology bypass output winding (ancillary coil W1) when need not isolate between main road output and bypass output is exported winding by part main road and is formed, the Same Name of Ends of bypass output winding connects the d pole of metal-oxide-semiconductor Q1, bypass outfan is formed after the s pole series inductance of metal-oxide-semiconductor Q1, ground connection after the s pole series inductance of metal-oxide-semiconductor Q1 and electric capacity, the s pole of metal-oxide-semiconductor Q1 connects the d pole of metal-oxide-semiconductor Q3, the s pole ground connection of metal-oxide-semiconductor Q3, the g pole of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q3 connects running voltage.
Main road output and bypass export the application scenario that need not isolate, and the voltage of A point is for reference ground always forward, and therefore, metal-oxide-semiconductor Q2 omits.
Auxiliary winding is to extract out from main road winding, and in order to not affect the output of main road, the number of turns summation of winding W1 and winding W4 should with equal before, winding W1+ winding W4=winding W5.
Now, bypass exports and metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q7, and the relation between the voltage of winding W1 and winding W4+ winding W5 is as follows:
Inside this case, main road output 30V, the number of turn of winding W5 is 2, and the dutycycle recommended is 50%. Therefore, the voltage that each circle coil of transformator bears is 15V. The dutycycle of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 is not more than 50%.
As it is shown in figure 9, circuit simulation bypass output requirement the same with the bypass topology of above-mentioned isolated form be 5V, when the number of turn of winding W1 is 1 time, the dutycycle of metal-oxide-semiconductor Q1 is 33%. And if the number of turn of winding W1 is 2, then the dutycycle of metal-oxide-semiconductor Q1 is 16.7%. Therefore, we select the number of turn of winding W1 to be 1. Simulation results is as follows:
1) main road is output as 30V, bypass output 5V, it is achieved that the target of doubleway output.
2) metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q7 is simultaneously open-minded, but turns off in advance. The dutycycle of metal-oxide-semiconductor Q1 is 33%, and the dutycycle of metal-oxide-semiconductor Q7 is 50%.
3) platform voltage of metal-oxide-semiconductor Q1 is 15V, and the about 45V of platform voltage of metal-oxide-semiconductor Q3, and this voltage stress is higher than the version of isolation.
As shown in Figure 10, when the dutycycle of bypass output does not limit requirement. This means that the dutycycle that bypass exports can more than the dutycycle of main road. The output of auxiliary rises to 13.5V, and we can calculate the dutycycle of metal-oxide-semiconductor Q1 and are:
The dutycycle of the metal-oxide-semiconductor Q1 dutycycle more than metal-oxide-semiconductor Q7.Simulation results is as follows:
1) dutycycle of metal-oxide-semiconductor Q1 is 63%, more than the dutycycle of metal-oxide-semiconductor Q750%. Inside the version of non-isolated, the dutycycle of auxiliary do not had conditional requirement.
2) main road is output as 30V, bypass output 13.5V, it is achieved that the target of doubleway output.
3) the about 45V of the platform voltage of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q3, this voltage stress is higher than the circuit described by Fig. 5 and Fig. 6.
In actual applications, main road circuit can form electrical combination flexibly with the bypass circuit topology of the present embodiment.
As shown in figure 11, the Switching Power Supply bypass topology of the present embodiment combines with half-bridge all wave rectification shape main road circuit, adopts the Switching Power Supply bypass topology of the isolated form of the present embodiment.
As shown in figure 12, the Switching Power Supply bypass topology of the present embodiment combines with full-bridge all wave rectification shape main road circuit, adopts the Switching Power Supply bypass topology of the isolated form of the present embodiment.
As shown in figure 13, the Switching Power Supply bypass of the present embodiment is topological and positive exciting synchronous rectification shape main road circuit combines, and adopts the Switching Power Supply bypass topology of the isolated form of the present embodiment.
As shown in figure 14, the Switching Power Supply bypass topology of the present embodiment combines with half-bridge all wave rectification shape main road circuit, adopts the Switching Power Supply bypass topology of the isolated form of the present embodiment.
As shown in figure 15, the Switching Power Supply bypass topology of the present embodiment combines with the main road circuit of full-bridge full-wave rectifying circuit, adopts the Switching Power Supply bypass topology of the isolated form of the present embodiment.
As shown in figure 16, the Switching Power Supply bypass topology of the present embodiment combines with the main road circuit of half-bridge full-wave rectifying circuit, adopts the Switching Power Supply bypass topology of the non-isolation type of the present embodiment.
As shown in figure 17, the Switching Power Supply bypass topology of the present embodiment combines with the main road circuit of full-bridge full-wave rectifying circuit, adopts the Switching Power Supply bypass topology of the non-isolation type of the present embodiment.
The above; being only the present invention preferably detailed description of the invention, but protection scope of the present invention is not limited thereto, any those familiar with the art is in the technical scope that the invention discloses; the change that can readily occur in or replacement, all should be encompassed within protection scope of the present invention. Therefore, protection scope of the present invention should be as the criterion with the protection domain of claims.
Claims (6)
1. a novel switched power supply bypass topology, it is characterized in that: at main road outlet side, bypass output winding is set, the Same Name of Ends of bypass output winding connects the d pole of metal-oxide-semiconductor Q1, forming bypass outfan, ground connection after the s pole series inductance of metal-oxide-semiconductor Q1 and electric capacity after the s pole series inductance of metal-oxide-semiconductor Q1, the s pole of metal-oxide-semiconductor Q1 connects the d pole of metal-oxide-semiconductor Q3, the s pole ground connection of metal-oxide-semiconductor Q3, the g pole of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q3 connects running voltage.
2. novel switched power supply bypass as claimed in claim 1 topology, it is characterised in that: bypass output winding is exported winding by part main road and is formed.
3. novel switched power supply bypass as claimed in claim 2 topology, it is characterized in that: also include metal-oxide-semiconductor Q2, the Same Name of Ends of bypass output winding connects the d pole of metal-oxide-semiconductor Q1, the s pole of metal-oxide-semiconductor Q1 connects the s pole of metal-oxide-semiconductor Q2, the g pole of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 connects running voltage, forms bypass outfan after the d pole series inductance of metal-oxide-semiconductor Q2;
The earth terminal of bypass output winding connects the s pole of metal-oxide-semiconductor Q3, and the d pole of metal-oxide-semiconductor Q3 connects the d pole of metal-oxide-semiconductor Q2, and the g pole of metal-oxide-semiconductor Q3 connects running voltage, is positioned at metal-oxide-semiconductor Q3 and the Capacitance parallel connection at inductance coil two ends, ground connection after inductance coil series capacitance.
4. novel switched power supply bypass as claimed in claim 3 topology, it is characterised in that: the bypass output winding of isolation is set.
5. novel switched power supply bypass as claimed in claim 4 topology, it is characterized in that: the Same Name of Ends of bypass output winding connects the s pole of metal-oxide-semiconductor Q1, the d pole of metal-oxide-semiconductor Q1 connects the d pole of metal-oxide-semiconductor Q2, the g pole of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 connects running voltage, form bypass outfan after the s pole series inductance of metal-oxide-semiconductor Q2, replace corresponding connection.
6. the novel switched power supply bypass topology as described in claim 4 or 5, it is characterised in that: effective operative duty cycles of the dutycycle of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2��bypass winding.
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CN102130587A (en) * | 2010-01-13 | 2011-07-20 | 台达电子工业股份有限公司 | Multi-output DC to DC conversion device with voltage-stabilizing control |
CN204615657U (en) * | 2015-04-21 | 2015-09-02 | 中国电子科技集团公司第四十三研究所 | A kind of topological circuit of wide input voltage isolation type switch power |
CN105322798A (en) * | 2014-07-29 | 2016-02-10 | 艾默生网络能源有限公司 | Multipath output flyback converter |
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US5541828A (en) * | 1992-12-15 | 1996-07-30 | At&T Corp. | Multiple output converter with continuous power transfer to an output and with multiple output regulation |
JP2002084753A (en) * | 2000-09-07 | 2002-03-22 | Matsushita Electric Ind Co Ltd | Multiple-output switching power supply unit |
CN101467342A (en) * | 2006-06-14 | 2009-06-24 | 3W电源控股有限公司 | Direct current / direct current converter with multiple outputs |
CN1870408A (en) * | 2006-06-19 | 2006-11-29 | 艾默生网络能源有限公司 | Multi-channel output DC-DC inverter |
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