CN105719679A - Sensitive amplifier and signal processing method - Google Patents
Sensitive amplifier and signal processing method Download PDFInfo
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- CN105719679A CN105719679A CN201410719895.4A CN201410719895A CN105719679A CN 105719679 A CN105719679 A CN 105719679A CN 201410719895 A CN201410719895 A CN 201410719895A CN 105719679 A CN105719679 A CN 105719679A
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Abstract
The present invention discloses a sensitive amplifier and a signal processing method, the sensitive amplifier comprises a biasing unit, a first modulation unit, an amplifying unit, a second modulation unit, a low-pass filtering unit and a comparison unit, the biasing unit is used for collecting and outputting a first switching signal corresponding to a memory cell and a second switching signal corresponding to a reference memory cell; the first modulation unit is used for first frequency modulation of the switching signals to output a first modulation signal; the amplifying unit is used for amplifying the first modulation signal and outputting an amplified signal; the second modulation unit is used for second frequency modulation of the amplified signal and outputting a second modulation signal; the low-pass filtering unit is used for filtering the second modulation signal to filter out high-frequency signals to output filtered signals; and the comparison unit is used for comparison of the filtered signals to output a comparison result. The sensitive amplifier can improve signal to noise ratio and improve the accuracy of the comparison result by increasing a strength difference between a desired signal and a noise signal.
Description
Technical field
The present invention relates to signal processing technology field, particularly relate to a kind of sense amplifier and a kind of method of signal processing.
Background technology
The memorizer that sense amplifier is made up of multiple memory element carries out one of Key Circuit when storage information reads, its effect is memory element to be sampled and compares with reference memory unit, output comparative result (logical zero or logical one).
Along with the continuous progress of semiconductor fabrication process, the integrated scale of circuit increases, being developed rapidly of multilevel storage technique, and the resolution gap between each storage bit diminishes, and classification is more many, and gap is more little, and the useful signal intensity of each memory element output is more little.And cmos circuit itself has bigger flicker noise, the integrated scale increase of circuit can introduce noise, and the input imbalance of sense amplifier also can be converted to a kind of noise.When noise signal strength introduced in the useful signal intensity that each memory element exports with its work process has comparability, the accuracy of sense amplifier comparative result will be had a strong impact on.
Summary of the invention
It is an object of the invention to provide a kind of sense amplifier and a kind of signal processing method, to improve the signal to noise ratio of described sense amplifier, thus improving the accuracy of described sense amplifier comparative result.
For solving above-mentioned technical problem, embodiments provide following technical scheme:
A kind of sense amplifier, including:
Bias unit, applies biasing to memory element and reference memory unit, gathers and export the first conversion signal corresponding with described memory element and the corresponding with described reference memory unit second conversion signal；
First modulating unit, changes signal to described first and described second conversion signal carries out first frequency modulation, output the first modulation signal；
Amplifying unit, modulates signal to described first and is amplified, and export amplification signal；
Second modulating unit, carries out second frequency modulation, and exports the second modulation signal described amplification signal；
Low-pass filter unit, modulates signal to second and is filtered, after being filtered by high-frequency signal therein, export filtered signal；
Comparing unit, compares described filtered signal, exports comparative result.
Preferably, described bias unit is feedback-clamp circuit, and described feedback-clamp circuit includes:
First NMOS tube, the second NMOS tube, the first phase inverter, the second phase inverter；
The outfan of described first phase inverter is connected with the grid of described first NMOS tube, the input of described first phase inverter is connected with the source electrode of described first NMOS tube and forms the first common port, and described first common port is as the port gathering described memory element output signal；
The outfan of described second phase inverter is connected with the grid of described second NMOS tube, the input of described second phase inverter is connected with described second NMOS tube source electrode and forms the second common port, and described second common port is as the port gathering described reference memory unit output signal；
The drain electrode of described first NMOS tube and the drain electrode of described second NMOS tube constitute two outfans.
Preferably, described first modulating unit and the second modulating unit are modulation circuit, and described modulation circuit includes:
Biphase non-overlapping clock circuit, the first PMOS, the second PMOS, the 3rd PMOS, the 4th PMOS；
Described biphase non-overlapping clock circuit has the clock signal that the first outfan and the second outfan, described first outfan and described second outfan output are complementary；
The grid of described first PMOS is connected with the grid of described second PMOS and forms the 3rd common port, and described 3rd common port connects the first outfan of described biphase non-overlapping clock circuit；
The grid of described 3rd PMOS is connected with the grid of described 4th PMOS, forms the 4th common port, and described 4th common port connects the second outfan of described biphase non-overlapping clock；
The source electrode of described first PMOS is connected with the source electrode of described 3rd PMOS, form the 5th common port, described 5th common port is as the first pole of the input of described modulation circuit, the source electrode of described second PMOS is connected with the source electrode of described 4th PMOS, forming the 6th common port, described 6th common port is as the second pole of the input of described modulation circuit；
First pole of the outfan that the drain electrode of described first PMOS is connected as described modulation circuit with the drain electrode of the 4th PMOS, described second PMOS with the second pole of outfan of being connected as described modulation circuit of the drain electrode of described 3rd PMOS that drains.
Preferably, described filtered signal includes: changes the first filtering signal corresponding to signal with described first and changes, with described second, the second filtering signal that signal is corresponding, described first filtering signal and described second filtering signal are compared by described comparing unit, when described first filtering signal is more than described second filtering signal, output high level, when described first filtering signal is less than described second filtering signal, output low level.
Preferably, described amplifying unit is low-power integrated operational amplifier or broadband integrated operational amplifier.
Preferably, described low-pass filter unit is Butterworth filter or Chebyshev filter.
Preferably, described comparing unit is voltage comparator, window comparator or hysteresis loop comparator.
A kind of method of signal processing, is applied to the sense amplifier described in any of the above-described item, and the method includes:
The output signal of memory element and reference memory unit is applied bias voltage, gathers and export the first conversion signal corresponding with described memory element and the corresponding with described reference memory unit second conversion signal；
Change signal to described first and described second conversion signal carries out first frequency modulation, output the first modulation signal；
Modulate signal to described first to be amplified, and export amplification signal；
Described amplification signal is carried out second frequency modulation, and exports the second modulation signal；
Modulate signal to second to be filtered, after being filtered by high-frequency signal therein, export filtered signal；
Described filtered signal is compared, exports comparative result.
Preferably, described described filtered signal being compared, output comparative result includes: to changing the first filtering signal corresponding to signal with described first and second filtering signal corresponding with the second described conversion signal compares；When described first filtering signal is more than described second filtering signal, export high level, when described first filtering signal is less than described second filtering signal, output low level.
Compared with prior art, technique scheme has the advantage that
The sense amplifier that the embodiment of the present invention provides includes: bias unit, the first modulating unit, amplifying unit, the second modulating unit, low-pass filter unit and comparing unit, wherein, described first modulating unit carries out first frequency modulation for the offset signal that described bias unit is exported, output the first modulation signal, described amplifying unit is amplified for modulating signal to described first, described second modulating unit for carrying out second frequency modulation to described amplification signal, and signal is modulated in output second.
As can be seen here, the sense amplifier that the embodiment of the present invention provides is in signal processing, signal after utilizing amplifying unit that the output signal of memory element and reference memory unit is biased voltage conversion is exaggerated, improve memory element and the useful signal intensity of reference memory unit output, although in signal amplification process, the input Misadjustment noise of amplifying unit can be introduced, but the sense amplifier that the embodiment of the present invention provides, the useful signal that memory element is exported by the first modulating unit and the second modulating unit is utilized to carry out twice frequency modulation, but the input Misadjustment noise merely with the second modulating unit, amplifying unit introduced has carried out a frequency modulation(PFM), so that in the signal of described second modulating unit output, the main energetic of useful signal is positioned at base frequency range, the energy of noise signal is dispersed to high-frequency range, recycling low-pass filter circuit is filtered, the noise that amplifying unit introduces can be substantially filtered out, and then when utilizing comparing unit to compare, increase the difference between useful signal intensity and noise signal strength, improve the signal to noise ratio of described sense amplifier, improve the accuracy of comparative result.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, the accompanying drawing used required in embodiment or description of the prior art will be briefly described below, apparently, accompanying drawing in the following describes is some embodiments of the present invention, for those of ordinary skill in the art, under the premise not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the structural representation of a kind of detailed description of the invention of sense amplifier provided by the present invention；
Fig. 2 is the circuit structure diagram of a kind of detailed description of the invention of a kind of sense amplifier provided by the present invention；
Fig. 3 be sense amplifier provided by the present invention a kind of detailed description of the invention in the electrical block diagram of feedback-clamp circuit；
Fig. 4 be sense amplifier provided by the present invention a kind of detailed description of the invention in the electrical block diagram of modulation circuit；
Fig. 5 is the schematic flow sheet of a kind of detailed description of the invention of signal processing method provided by the invention.
Detailed description of the invention
Just as described in the background section, in prior art, the signal to noise ratio of sense amplifier is relatively low, and the accuracy of output comparative result is poor.
Based on this, embodiments provide a kind of sense amplifier, including:
Bias unit, applies biasing to memory element and reference memory unit, gathers and export the first conversion signal corresponding with memory element and the corresponding with reference memory unit second conversion signal；
First modulating unit, changes signal to described first and described second conversion signal carries out frequency first and modulates, output the first modulation signal；
Amplifying unit, modulates signal to described first and is amplified, and export amplification signal；
Second modulating unit, carries out frequency modulation(PFM), and exports the second modulation signal described amplification signal；
Low-pass filter unit, modulates signal to second and is filtered, after being filtered by high-frequency signal therein, export filtered signal；
Comparing unit, compares described filtered signal, exports comparative result.
Accordingly, the embodiment of the present invention additionally provides a kind of signal processing method, is applied to above-mentioned sense amplifier, and the method includes:
The output signal of memory element and reference memory unit is applied bias voltage, gathers and export the first conversion signal corresponding with described memory element and the corresponding with described reference memory unit second conversion signal；
Change signal to described first and described second conversion signal carries out first frequency modulation, output the first modulation signal；
Modulate signal to described first to be amplified, and export amplification signal；
Described amplification signal is carried out second frequency modulation, and exports the second modulation signal；
Modulate signal to second to be filtered, after being filtered by high-frequency signal therein, export filtered signal；
Described filtered signal is compared, exports comparative result.
Sense amplifier that the embodiment of the present invention provides and signal processing method thereof, in signal processing, utilize amplifying unit that the output signal of memory element and reference memory unit is biased the conversion signal after voltage processes to be exaggerated, improve memory element and the useful signal intensity of reference memory unit output, although in signal amplification process, the input Misadjustment noise of amplifying unit can be introduced, but the sense amplifier that the embodiment of the present invention provides, the useful signal that memory element is exported by the first modulating unit and the second modulating unit is utilized to carry out twice frequency modulation, but the input Misadjustment noise merely with the second modulating unit, amplifying unit introduced has carried out a frequency modulation(PFM), so that in the signal of described second modulating unit output, the main energetic of useful signal is positioned at base frequency range, the energy of noise signal is positioned at high-frequency range, recycling low-pass filter circuit is filtered, the noise that amplifying unit introduces can be substantially filtered out, and then when utilizing comparing unit to compare, increase the difference between useful signal intensity and noise signal strength, improve the signal to noise ratio of described sense amplifier, improve the accuracy of comparative result.
Understandable for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
Elaborate detail in the following description so that fully understanding the present invention.But the present invention can be different from alternate manner described here implement with multiple, and those skilled in the art can do similar popularization when without prejudice to intension of the present invention.Therefore the present invention is not by the following public restriction being embodied as.
Refer to the schematic diagram of a kind of detailed description of the invention that Fig. 1, Fig. 1 are sense amplifier provided by the present invention.
In a kind of detailed description of the invention, sense amplifier of the present invention includes bias unit 300, the first modulating unit 400, amplifying unit 500, the second modulating unit 401, low-pass filter unit 600, comparing unit 700.
The output signal of memory element 100 and reference memory unit 200 is gathered by bias unit 300, and to, after its biasing, exporting the first conversion signal corresponding with described memory element 100 and the corresponding with described reference memory unit 200 second conversion signal.
Preferably, described bias unit 300 includes feedback-clamp circuit, in one embodiment of the invention, described sense amplifier is current-mode, described feedback-clamp circuit is for providing stable bias voltage for described memory element 100 and described reference memory unit 200, to obtain flowing through the stable transmission electric current of memory element and reference memory unit.In other embodiments of the invention, described sense amplifier is voltage mode, described feedback-clamp circuit can be also used for providing stable bias current for memory element 100 and reference memory unit 200, to obtain the regulated output voltage of described memory element 100 and reference memory unit 200, this is not limited by the present invention, specifically depends on the circumstances.
In one particular embodiment of the present invention, as shown in Figures 2 and 3, Fig. 2 is the circuit structure diagram of a kind of detailed description of the invention of a kind of sense amplifier provided by the present invention, Fig. 3 be sense amplifier provided by the present invention a kind of detailed description of the invention in the electrical block diagram of feedback-clamp circuit.In the present embodiment, described feedback-clamp circuit, including:
First NMOS tube 311, the second NMOS tube 321, the first phase inverter 312, the second phase inverter 322；
The outfan of described first phase inverter 312 is connected with described first NMOS tube 311 grid, the input of described first phase inverter 312 is connected with described first NMOS tube 311 source electrode and forms the first common port, and described first common port exports the port of signal as described collection memory element 100；
The outfan of the second described phase inverter 322 is connected with the second described NMOS tube 321 grid, the input of the second described phase inverter 322 is connected with the second described NMOS tube 321 source electrode and forms the second common port, and described second common port exports the port of signal as gathering described reference memory unit 200；
The drain electrode of the first described NMOS tube 311 and the drain electrode of described second NMOS tube 321 constitute two outfans.
The outfan of the first described phase inverter 312 and the grid of the first described NMOS tube 311 are connected to form the first negative feedback, and the outfan of the second described phase inverter 322 and the grid of the second described NMOS tube 321 are connected to form the second negative feedback.The first described negative feedback and the second negative feedback can stablize the voltage of input.
Owing to the operation principle of described first phase inverter 312 and described second phase inverter 322 has been that those skilled in the art are known, the present invention is not detailed at this.
After gathered and exported the first conversion signal corresponding with described memory element 100 and the corresponding with described reference memory unit 200 second conversion signal by bias unit 300, by the first modulating unit 400, described conversion signal being carried out first frequency modulation, signal is modulated in output first.The modulation of described first frequency is that by frequency modulation(PFM), the first described conversion signal and described second conversion signal are extended to high frequency.Because the present invention is in order to improve the signal to noise ratio of signal, can be amplified useful signal processing, but after amplification, owing to amplifying unit can introduce input noise, if in advance useful signal not being carried out frequency modulation process, the energy of input noise signal and the main energetic of useful signal that so amplified unit introduces after amplifying are in fundamental frequency or high frequency together, sense amplifier will be unable to filter this partial noise signal, cause being difficult to differentiate between useful signal and noise signal, the resolution capability of sense amplifier can be reduced, i.e. noise resisting ability.
Modulated signal by amplifying unit 500 to first to be amplified, and export amplification signal.Described amplification signal includes useful signal (from the signal that memory element 100 and reference memory unit 200 collect) and the input noise signal of amplifying unit 500 introducing, and the second frequency then through the second modulating unit 401 is modulated.By the second modulating unit 401, described amplification signal carried out second frequency modulation, and export the second modulation signal.In the process, the useful signal in described amplification signal is recalled to fundamental frequency by frequency modulation(PFM) from high-frequency range, and the input noise signal that described amplifying unit 500 introduces extends into high-frequency range by frequency modulation(PFM).After this modulation, the main energetic amplifying the useful signal in signal and input noise signal is distributed in different frequency bands, namely the main energetic of useful signal is distributed in fundamental frequency, and the Energy distribution of input noise signal is at high frequency, it is simple to subsequently through low-pass filter unit elimination input noise signal.
On the basis of any of the above-described embodiment, in one particular embodiment of the present invention, described amplifying unit is low-power integrated operational amplifier or broadband integrated operational amplifier, but it is not limited to above two amplifier, can also be other kinds of amplifier, as long as the amplitude of input signal can be had enlarging function.
On the basis of any of the above-described embodiment, in one particular embodiment of the present invention, described first modulating unit 400 and the second modulating unit 401 are modulation circuit, and as shown in Figure 4, the structure of described modulation circuit includes the structural representation of described modulation circuit:
Biphase non-overlapping clock circuit 420, the first PMOS 411, the second PMOS 412, the 3rd PMOS 413, the 4th PMOS 414；
Described biphase non-overlapping clock circuit 420 has the first outfan and the second outfan, described first outfan and described second outfan two complementary clock signals of output；
The grid of described first PMOS 411 is connected with the grid of described second PMOS 412 and forms the 3rd common port, and described 3rd common port connects the first outfan of described biphase non-overlapping clock circuit；
The grid of described 3rd PMOS 413 is connected with the grid of described 4th PMOS 414, forms the 4th common port, and described 4th common port connects the second outfan of described biphase non-overlapping clock；
The source electrode of described first PMOS 411 is connected with the source electrode of described 3rd PMOS 413, form the 5th common port, described 5th common port is as the first pole of the input of described modulation circuit, the source electrode of described second PMOS 412 is connected with the source electrode of described 4th PMOS 414, forming the 6th common port, the 6th described common port is as the second pole of the input of described modulation circuit；
First pole of the outfan that the drain electrode of the first described PMOS 411 is connected as described modulation circuit with the drain electrode of the 4th described PMOS 414, the second pole of the outfan that the drain electrode of the second described PMOS 412 is connected as described modulation circuit with the drain electrode of the 3rd described PMOS 413.
The operation principle of described modulation circuit is, described biphase non-overlapping clock circuit 420 exports two complementary clock signals.When the 3rd described common port is high level, when the 4th described common port is low level, the 3rd PMOS 413 described in gating and the 4th described PMOS 414, the the second pole level making the first pole of described modulation circuit input and described modulation circuit outfan is equal, and described modulation circuit input the second pole and described modulation circuit outfan the first pole level are equal.Otherwise, when the 3rd described common port is low level, when the 4th described common port is high level, the first PMOS 411 described in gating and the second described PMOS 412, the first pole and described modulation circuit outfan the first pole level that make described modulation circuit input are equal, and described modulation circuit input the second pole and described modulation circuit outfan the second pole level are equal.Namely the first described PMOS 411 and the second described PMOS 412 are controlled by the signal of the 3rd described common port, and described 3rd PMOS 413 and the 4th described PMOS 414 are controlled by the signal of the 4th described common port.The operating frequency of described 3rd common port and the 4th common port is f, and according to signal modulation principle, the signal of described modulation circuit input input being modulated onto Frequency point is f, 3f, 5f ... on the component of (2n+1) f.
Modulated signal by described low-pass filter unit 600 to second to be filtered, after being filtered by high-frequency signal therein, export filtered signal.In this filtering, owing to the main energetic of useful signal is in base frequency range, and the energy of the input noise signal that amplifying unit 500 introduces is in high-frequency range, therefore after the filter action of described low-pass filter unit 600, the input noise signal that amplifying unit 600 described in second modulation signal introduces can be filtered, modulate the useful signal output in signal by second.
On the basis of any of the above-described embodiment, in one particular embodiment of the present invention, described low-pass filter unit 600 is Butterworth filter or Chebyshev filter, but be not limited to that both low pass filters, can also is that other the low pass filter with this low-pass filtering function, as long as input signal can be realized low-pass filtering treatment.
By comparing unit 700, described filtered signal is compared, export comparative result.Although also can introduce noise signal when comparing unit 700 processes after described filtered letter, but the amplitude of the useful signal in described filtered signal introduces the amplitude of noise signal much larger than described comparing unit 700, make described sense amplifier can be easily discriminated useful signal and noise signal, improve the signal to noise ratio of described sense amplifier, therefore utilize the sense amplifier that the embodiment of the present invention provides can obtain comparative result accurately.
It should be noted that, described filtered signal includes: described filtered signal includes: changes the first filtering signal corresponding to signal with described first and changes, with described second, the second filtering signal that signal is corresponding, described first filtering signal and described second filtering signal are compared by described comparing unit, when described first filtering signal is more than the second filtering signal, output high level, when described first filtering signal is less than the second filtering signal, output low level.Certainly, a special case in this embodiment, described comparing unit can also export contrary level, when as described in the first filtering signal more than as described in the second filtering signal time, output low level, when described first filtering signal is less than described second filtering signal, exports high level.This is not limited by the present invention, specifically depends on the circumstances.
On the basis of any of the above-described embodiment, in one particular embodiment of the present invention, described comparing unit 700 is voltage comparator, window comparator or hysteresis loop comparator.Certainly, the comparing unit 700 that the embodiment of the present invention provides is not limited thereto three kinds of comparators, it is also possible to be the other kinds of comparator with similar function.
In sum, the sense amplifier that the embodiment of the present invention provides, in signal processing, utilize described amplifying unit that the output signal of described memory element and described reference memory unit is biased the conversion signal after voltage processes to be exaggerated, improve described memory element and the useful signal intensity of reference memory unit output, although in signal amplification process, the input Misadjustment noise of amplifying unit can be introduced, but the sense amplifier that the embodiment of the present invention provides, the useful signal that described memory element is exported by described first modulating unit and described second modulating unit is utilized to carry out twice frequency modulation, but the input Misadjustment noise merely with the second modulating unit, amplifying unit introduced has carried out a frequency modulation(PFM), so that in the signal of described second modulating unit output, the main energetic of useful signal is positioned at base frequency range, the energy of noise signal is positioned at high-frequency range, recycle described low-pass filter circuit to be filtered, the noise that amplifying unit introduces can be substantially filtered out, and then when utilizing comparing unit to compare, increase the difference between useful signal intensity and noise signal strength, improve the signal to noise ratio of described sense amplifier, improve the accuracy of comparative result.
Except above-mentioned sense amplifier, a kind of method that present invention also offers signal processing.
The method of described signal processing, is applied to the sense amplifier described in any of the above-described item, in one embodiment of the invention, as it is shown in figure 5, the method comprises the following steps:
S801, applies biasing to memory element and reference unit, gathers and export the first conversion signal corresponding with described memory element and the corresponding with described reference memory unit second conversion signal；
S802, changes signal to described first and described second conversion signal carries out first frequency modulation, output the first modulation signal；
S803, modulates signal to described first and is amplified, and export amplification signal；
S804, carries out second frequency modulation, and exports the second modulation signal described amplification signal；
S805, modulates signal to second and is filtered, after being filtered by high-frequency signal therein, export filtered signal；
S806, compares described filtered signal, exports comparative result.
The first described modulation signal is described first conversion signal and described second conversion signal to be carried out frequency modulation(PFM) and extend into the signal of high frequency；Described amplification signal includes the input noise signal of high-frequency bias signal and the fundamental frequency amplified；The second described modulated signal package draws together the useful signal (the storage signal of collection and reference storage signal) being in fundamental frequency and the input noise signal (noise signal introduced during amplification) being in high frequency.
Preferably, described described filtered signal is compared, output comparative result, including: to changing the first filtering signal corresponding to signal with described first and comparing with the described second the second filtering signal changing signal corresponding, when described first filtering signal is more than described second filtering signal, output high level, when described first filtering signal is less than described second filtering signal, output low level.
In another embodiment of the present invention, described comparing unit can also export contrary level, when as described in the first filtering signal more than as described in the second filtering signal time, output low level, when described first filtering signal is less than described second filtering signal, export high level.This is not limited by the present invention, specifically depends on the circumstances.
In sum, the signal processing method that the embodiment of the present invention provides, first the output signal of memory element and reference memory unit is exaggerated, improve memory element and the useful signal intensity of reference memory unit output, although in signal amplification process, input Misadjustment noise can be introduced, but the signal processing method that the embodiment of the present invention provides, the useful signal of memory element output has been carried out twice frequency modulation, but only the input Misadjustment noise introduced in amplification process has been carried out a frequency modulation(PFM), so that in the signal of described second modulating unit output, the main energetic of useful signal is positioned at base frequency range, the energy of noise signal is positioned at high-frequency range, modulate signal to second again to be filtered, after high-frequency signal therein is filtered, export filtered signal, the noise that amplifying unit introduces can be filtered, and then when comparing, increase the gap between useful signal intensity and noise signal strength, improve the signal to noise ratio of described sense amplifier, improve the accuracy of comparative result.
Above content is that the method to sense amplifier provided by the present invention and signal processing is described in detail.Principles of the invention and embodiment are set forth by specific case used herein, and the explanation of above example is only intended to help to understand method and the core concept thereof of the present invention.It should be pointed out that, for those skilled in the art, under the premise without departing from the principles of the invention, it is also possible to the present invention carries out some improvement and modification, these improve and modify in the protection domain also falling into the claims in the present invention.
Claims (9)
1. a sense amplifier, it is characterised in that including:
Bias unit, applies biasing to memory element and reference memory unit, gathers and export the first conversion signal corresponding with described memory element and the corresponding with described reference memory unit second conversion signal；
First modulating unit, changes signal to described first and described second conversion signal carries out first frequency modulation, output the first modulation signal；
Amplifying unit, modulates signal to described first and is amplified, and export amplification signal；
Second modulating unit, carries out second frequency modulation, and exports the second modulation signal described amplification signal；
Low-pass filter unit, modulates signal to second and is filtered, after being filtered by high-frequency signal therein, export filtered signal；
Comparing unit, compares described filtered signal, exports comparative result.
2. sense amplifier as claimed in claim 1, it is characterised in that described bias unit is feedback-clamp circuit, and described feedback-clamp circuit includes:
First NMOS tube, the second NMOS tube, the first phase inverter, the second phase inverter；
The outfan of described first phase inverter is connected with the grid of described first NMOS tube, the input of described first phase inverter is connected with the source electrode of described first NMOS tube and forms the first common port, and described first common port is as the port gathering described memory element output signal；
The outfan of described second phase inverter is connected with the grid of described second NMOS tube, the input of described second phase inverter is connected with described second NMOS tube source electrode and forms the second common port, and described second common port is as the port gathering described reference memory unit output signal；
The drain electrode of described first NMOS tube and the drain electrode of described second NMOS tube constitute two outfans.
3. sense amplifier as claimed in claim 1, it is characterised in that described first modulating unit and the second modulating unit are modulation circuit, and described modulation circuit includes:
Biphase non-overlapping clock circuit, the first PMOS, the second PMOS, the 3rd PMOS, the 4th PMOS；
Described biphase non-overlapping clock circuit has the clock signal that the first outfan and the second outfan, described first outfan and described second outfan output are complementary；
The grid of described first PMOS is connected with the grid of described second PMOS and forms the 3rd common port, and described 3rd common port connects the first outfan of described biphase non-overlapping clock circuit；
The grid of described 3rd PMOS is connected with the grid of described 4th PMOS, forms the 4th common port, and described 4th common port connects the second outfan of described biphase non-overlapping clock；
The source electrode of described first PMOS is connected with the source electrode of described 3rd PMOS, form the 5th common port, described 5th common port is as the first pole of the input of described modulation circuit, the source electrode of described second PMOS is connected with the source electrode of described 4th PMOS, forming the 6th common port, described 6th common port is as the second pole of the input of described modulation circuit；
First pole of the outfan that the drain electrode of described first PMOS is connected as described modulation circuit with the drain electrode of the 4th PMOS, described second PMOS with the second pole of outfan of being connected as described modulation circuit of the drain electrode of described 3rd PMOS that drains.
4. sense amplifier according to claim 1, it is characterized in that, described filtered signal includes: changes the first filtering signal corresponding to signal with described first and changes, with described second, the second filtering signal that signal is corresponding, described first filtering signal and described second filtering signal are compared by described comparing unit, when described first filtering signal is more than described second filtering signal, output high level, when described first filtering signal is less than described second filtering signal, output low level.
5. the sense amplifier as described in any one of claim 1-4, it is characterised in that described amplifying unit is low-power integrated operational amplifier or broadband integrated operational amplifier.
6. the sense amplifier as described in any one of claim 1-4, it is characterised in that described low-pass filter unit is Butterworth filter or Chebyshev filter.
7. the sense amplifier as described in any one of claim 1-4, it is characterised in that described comparing unit is voltage comparator, window comparator or hysteresis loop comparator.
8. a method for signal processing, is applied to the sense amplifier described in any one of claim 1-7, it is characterised in that the method includes:
The output signal of memory element and reference memory unit is applied bias voltage, gathers and export the first conversion signal corresponding with described memory element and the corresponding with described reference memory unit second conversion signal；
Change signal to described first and described second conversion signal carries out first frequency modulation, output the first modulation signal；
Modulate signal to described first to be amplified, and export amplification signal；
Described amplification signal is carried out second frequency modulation, and exports the second modulation signal；
Modulate signal to second to be filtered, after being filtered by high-frequency signal therein, export filtered signal；
Described filtered signal is compared, exports comparative result.
9. method according to claim 8, it is characterized in that, described described filtered signal being compared, output comparative result includes: to changing the first filtering signal corresponding to signal with described first and second filtering signal corresponding with the second described conversion signal compares；When described first filtering signal is more than described second filtering signal, export high level, when described first filtering signal is less than described second filtering signal, output low level.
Priority Applications (1)
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108630271A (en) * | 2017-03-22 | 2018-10-09 | 东芝存储器株式会社 | Memory devices and storage system |
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| US6078523A (en) * | 1996-03-29 | 2000-06-20 | Sgs-Thomson Microelectronics S.R.L. | Gain modulated sense amplifier and method of operating the same |
| CN101681678A (en) * | 2007-06-15 | 2010-03-24 | 美光科技公司 | Delta sigma sense amplifier comprising digital filters and memory |
| CN102426845A (en) * | 2011-11-30 | 2012-04-25 | 中国科学院微电子研究所 | Current-mode sense amplifier |
| CN103456341A (en) * | 2012-06-04 | 2013-12-18 | 三星电子株式会社 | Sense amplifier circuitry for resistive type memory |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6078523A (en) * | 1996-03-29 | 2000-06-20 | Sgs-Thomson Microelectronics S.R.L. | Gain modulated sense amplifier and method of operating the same |
| CN101681678A (en) * | 2007-06-15 | 2010-03-24 | 美光科技公司 | Delta sigma sense amplifier comprising digital filters and memory |
| CN102426845A (en) * | 2011-11-30 | 2012-04-25 | 中国科学院微电子研究所 | Current-mode sense amplifier |
| CN103456341A (en) * | 2012-06-04 | 2013-12-18 | 三星电子株式会社 | Sense amplifier circuitry for resistive type memory |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108630271A (en) * | 2017-03-22 | 2018-10-09 | 东芝存储器株式会社 | Memory devices and storage system |
| CN108630271B (en) * | 2017-03-22 | 2022-03-15 | 铠侠股份有限公司 | Memory device and memory system |
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| CN105719679B (en) | 2018-02-02 |
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