CN105836697A - MEMS (Micro Electro Mechanical Systems) cantilever structure and manufacturing method thereof - Google Patents
MEMS (Micro Electro Mechanical Systems) cantilever structure and manufacturing method thereof Download PDFInfo
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Abstract
The invention provides an MEMS (Micro Electro Mechanical Systems) cantilever structure and a manufacturing method thereof. The manufacturing method comprises the following steps: 1) providing a substrate, etching one end of the substrate to form a plurality of first trenches, and filling the trenches with a medium material; 2) depositing a sacrificial layer on a surface of the substrate, and etching the sacrificial layer and the other end of the substrate to form a contact hole; 3) growing an isolation layer on a side wall of the contact hole; 4) filling the contact hole with a conducting material, performing etching to form a plurality of second trenches, and filling the second trenches with a cantilever material till the conducting material covers the surfaces of the conducting material and the sacrificial layer; and 5) removing the sacrificial layer to form the cantilever structure. According to the MEMS cantilever structure, the first trenches are formed in the substrate and filled with the medium material on one hand, so that a contact area between a cantilever and the substrate can be reduced, and electrostatic attraction is reduced, thereby preventing adhesion of a free end of the cantilever. On the other hand, a root connection end of the cantilever has an embedded molding structure, so that root bending torque can be improved, and the fracture risk is lowered.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of MEMS cantilever beam structure and preparation method thereof.
Background technology
MEMS (microelectromechanical systems) technology is a fast-developing in recent years new and high technology, and it uses advanced partly leading
Body manufacturing process, can realize the batch micro operations of MEMS, compared with corresponding traditional devices, MEMS volume,
Power consumption, weight and have suitable advantage in price.
In MEMS micro mechanical structure, cantilever beam structure is to apply a kind of structure, relies on cantilever beam up-down vibration,
Cause the change of space charge, thus cause the change of signal, reach the purpose of structure design, so for the stress system of material
System and coefficient of elasticity just become the most sensitive and important.
As depicted in figs. 1 and 2 for prior art makes the flowage structure figure of cantilever beam structure, first use depositing technics in substrate
101A upper making sacrifice layer 105A, uses same depositing technics to make cantilever beam 112A the most again on sacrifice layer 105A,
Finally the sacrifice layer 105A below cantilever beam 112A is removed, i.e. form movable micro structure.Such as Fig. 2, this micro structure includes
Substrate 101A and cantilever beam 112A, described cantilever beam 112A one end is fixed on described substrate 101A surface, and the other end is freely
Mobile terminal.
There are two problems in this cantilever beam structure: fracture of root adheres to base material with moving freely end.
Cantilever beam length is significantly larger than the height and width of beam, if increasing mass, cantilever beam degree of disturbing can be caused to increase, cantilever beam root
Easy fracture.Additionally due to micro structure is made frequently with fragile materials such as monocrystal silicon, polysilicon, germanium silicon, in impact or shock loads
Under effect, when stress exceedes the strength degree of material, the most easily there is fracture failure.And also it can be seen that existing this system
Preparation Method uses integral type and makes, and discharges structure by removing sacrifice layer, but this integral type makes the root of cantilever beam
Portion is susceptible to fracture, because the longer micro cantilever structure of length is easier to cause resonance to cause in shock loading vibrated
The stress level of beam and change in displacement are relatively big, particularly under simple harmonic oscillation load effect, and the response of angled cantilevered beams end and excitation
Intensity relevant with frequency, oscillation intensity is the biggest, and the displacement of beam is the biggest so that cantilever beam root bending torque increase, fracture
Risk is the biggest.
When removing sacrifice layer, the surface tension of cleanout fluid can produce the sticking problem of cantilever beam structure.Dimensioning due to micromechanics
Very little microminiaturization surface to volume ratio strengthens relatively, and surface tension is significantly enhanced for the impact of structure, if occur with
During sacrifice layer release, a kind of fluid characteristics formed due to the molecule imbalance of attachment on surface, its result is liquid
Plane tends to shrinking, and the surface tension of cleanout fluid causes the most greatly that micro cantilever structure is dragged to be deformed, and causes micro-cantilever to tie
Structure contacts with substrate.On the other hand, the inside configuration residual stress that cantilever beam structure device produces in manufacturing process, one
The generation of adhesion is will also result under fixed temperature and humidity environment.
Therefore it provides a kind of Novel cantilever girder construction that is anti-fracture and that adhere to and preparation method thereof that has concurrently is that those skilled in the art need
Problem to be solved.
Summary of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of MEMS cantilever beam structure and preparation thereof
, easily there is fracture and the problem adhered to for solving cantilever beam structure in prior art in method.
For achieving the above object and other relevant purposes, the present invention provides the preparation method of a kind of MEMS cantilever beam structure, described
Preparation method at least includes step:
1) providing substrate, the one end etching described substrate forms several the first grooves, fills first medium material in the trench
Material；
2) in described substrate surface deposition of sacrificial layer, etch the other end of described sacrifice layer and substrate, form contact hole；
3) on the sidewall of described contact hole, sealing coat is grown；
4) in described contact hole, fill conductive material, etch described conductive material and form several the second grooves, described second
Groove fills cantilever material until cantilever material covers conductive material and sacrificial layer surface；
5) remove sacrifice layer, form cantilever beam structure.
As the scheme of a kind of optimization of the preparation method of MEMS cantilever beam structure of the present invention, described step 1) in form medium
The process of material is: use physical vapour deposition (PVD) or chemical gaseous phase deposition in the trench and the superficial growth dielectric material of substrate, it
After grind away the dielectric material of substrate surface, described dielectric material is silicon dioxide.
As the scheme of a kind of optimization of the preparation method of MEMS cantilever beam structure of the present invention, described step 2) in sacrifice layer
For germanium, the one end using dry etching mode to etch described sacrifice layer and substrate in this step forms contact hole.
As the scheme of a kind of optimization of the preparation method of MEMS cantilever beam structure of the present invention, described step 3) in sealing coat
For silicon dioxide.
As the scheme of a kind of optimization of the preparation method of MEMS cantilever beam structure of the present invention, described step 4) in be filled in and connect
Conductive material in contact hole is germanium silicon.
As the scheme of a kind of optimization of the preparation method of MEMS cantilever beam structure of the present invention, described step 4) in use dry method
Etching mode forms the second groove, and described cantilever material is monocrystal silicon, polysilicon or germanium silicon.
As the scheme of a kind of optimization of the preparation method of MEMS cantilever beam structure of the present invention, described step 5) in use wet method
The mode of etching removes described sacrifice layer.
The present invention also provides for a kind of MEMS cantilever beam structure, and described MEMS cantilever beam structure at least includes:
Substrate, one end of described substrate forms several the first grooves, and the other end forms contact hole；
Dielectric material, is filled in described first groove；
Conductive material, is filled in described contact hole, described conductive material surface higher than described substrate surface and by sealing coat with
Substrate is kept apart；
Second groove, is formed in described conductive material；
Cantilever material, is formed at the top of described substrate with air for gap, and described cantilever beam includes moving freely end and connecting
End, described in move freely and below end, be right against described dielectric material, described connection end is filled in described second groove.
As the scheme of a kind of optimization of MEMS cantilever beam structure of the present invention, described first groove is 3～5, the degree of depth of groove
Scope is 2～4 μm.
As the scheme of a kind of optimization of MEMS cantilever beam structure of the present invention, the unsettled side on the substrate of described cantilever material
Distance more than 3 μm.
As the scheme of a kind of optimization of MEMS cantilever beam structure of the present invention, the degree of depth of described second groove is 8～12 μm.
As it has been described above, MEMS cantilever beam structure of the present invention and preparation method thereof, including step: 1) substrate, etching are provided
One end of described substrate forms several the first groove, in the trench filled media materials；2) deposit at described substrate surface
Sacrifice layer, etches the other end of described sacrifice layer and substrate, forms contact hole；3) growth isolation on the sidewall of described contact hole
Layer；4) in described contact hole, fill conductive material, etch described conductive material and form several the second grooves, described second
Groove fills cantilever material until cantilever material covers conductive material and sacrificial layer surface；5) remove sacrifice layer, formed outstanding
Arm girder construction.The MEMS cantilever beam structure of the present invention, on the one hand adds the first groove filled media material in the substrate,
The contact area between cantilever beam and substrate can be reduced, reduce electrostatic attraction, thus prevent cantilever beam free end from adhering to；
On the other hand, the root of cantilever beam connects end and uses Embedded molding structure, can improve root bending torque, reduces fracture
Risk.
Accompanying drawing explanation
Fig. 1～Fig. 2 is the Structure and Process schematic diagram preparing MEMS cantilever beam of prior art.
Fig. 3 is the preparation flow schematic diagram of MEMS cantilever beam structure of the present invention.
Fig. 4～Fig. 8 is MEMS cantilever beam structure preparation method step 1 of the present invention) structural representation that presents.
Fig. 9～Figure 12 is MEMS cantilever beam structure preparation method step 2 of the present invention) structural representation that presents.
Figure 13～Figure 14 is MEMS cantilever beam structure preparation method step 3 of the present invention) structural representation that presents.
Figure 15～Figure 19 is MEMS cantilever beam structure preparation method step 4 of the present invention) structural representation that presents.
Figure 20 is MEMS cantilever beam structure preparation method step 5 of the present invention) structural representation that presents.
Element numbers explanation
101,101A substrate
102,106,110 photoresists
103 first grooves
104 dielectric materials
105,105A sacrifice layer
107 contact holes
108 sealing coats
109 conductive materials
111 second grooves
112,112A cantilever material
Detailed description of the invention
Below by way of specific instantiation, embodiments of the present invention being described, those skilled in the art can be by disclosed by this specification
Content understand other advantages and effect of the present invention easily.The present invention can also be added by the most different detailed description of the invention
To implement or application, the every details in this specification can also be based on different viewpoints and application, in the essence without departing from the present invention
Various modification or change is carried out under god.
Refer to accompanying drawing.It should be noted that the diagram provided in the present embodiment illustrates that the present invention's is basic the most in a schematic way
Conception, the most graphic in component count, shape and size time only display with relevant assembly in the present invention rather than is implemented according to reality
Drawing, during its actual enforcement, the kenel of each assembly, quantity and ratio can be a kind of random change, and its assembly layout kenel is also
It is likely more complexity.
The present invention provides the preparation method of a kind of MEMS cantilever beam structure, as it is shown on figure 3, described method at least includes step:
S1, it is provided that substrate, the one end etching described substrate forms several the first groove, in the trench filled media materials；
S2, in described substrate surface deposition of sacrificial layer, etches the other end of described sacrifice layer and substrate, forms contact hole；
S3, grows sealing coat on the sidewall of described contact hole；
S4, fills conductive material in described contact hole, etches described conductive material and form several the second grooves, described the
Two grooves fill cantilever material until cantilever material covers conductive material and sacrificial layer surface；
S5, removes sacrifice layer, forms cantilever beam structure.
Below in conjunction with concrete accompanying drawing, the preparation method of the MEMS cantilever beam structure of the present invention is done detailed introduction.
Step S1 is first carried out, refers to accompanying drawing 4～Fig. 8, it is provided that substrate 101, if the one end etching described substrate 101 is formed
Dry the first groove 103, filled media material 104 in described groove 103.
Described substrate 101 can be silicon substrate or SiGe, it is also possible to is other kinds of substrate, such as, and silicon-on-insulator (SOI)
Deng.In the present embodiment, described substrate 101 is silicon substrate.
Dry etch process can be used to etch described substrate 101 and to form the first groove 103, as it is shown in figure 5, in described substrate
101 surface spin coating photoresists 102, and pattern described photoresist 102 through the photoetching process such as overexposure, development.As shown in Figure 6,
The photoresist 102 utilizing patterning etches described substrate 101, and after removing remaining photoresist, 102 form the first groove 103.Should
First groove 103 is formed at one end of described substrate 101, corresponding with the free end of follow-up cantilever beam.Described first groove 101
Quantity and the spacing of groove determined by the length of cantilever beam, cantilever beam is the longest, and what groove made more evacuates, and cantilever beam is more
Short, it is the most intensive that groove makes.Preferably, substrate forms 3～5 the first grooves 103, the degree of depth of the first groove 103
Control in 2～4 μ m.
Physics can be used to use physical vapour deposition (PVD) or chemical gaseous phase to be deposited on the first groove 103 filled media material 104.Should
Process is: as it is shown in fig. 7, the dielectric material of growth covers the first groove 103 and substrate 101 surface, grind away substrate afterwards
The dielectric material 104 on 101 surfaces, forms structure as shown in Figure 8.Described dielectric material 104 is silicon dioxide, the most also may be used
To be other suitable dielectric materials, such as silicon nitride etc..
Then performing step S2, refer to accompanying drawing 9～Figure 12, in described substrate 101 surface deposition of sacrificial layer 105, etching is described
Sacrifice layer 105 and the other end of substrate 101, form contact hole 107.
The technique such as low-pressure chemical vapor deposition, plasma enhanced chemical vapor deposition can be used in described substrate 101 surface shape
Become sacrifice layer 105.Described sacrifice layer 105 can be any material that can remove, and do not damages other structures when removing.This
In embodiment, described sacrifice layer 105 elects germanium material temporarily as.
Formed contact hole 107 detailed process be: at described sacrifice layer 105 surface spin coating photoresist 106, and through overexposure,
The photoetching processes such as development pattern described photoresist 106, it is thus achieved that structure as shown in Figure 10.The most as shown in figure 11, figure is utilized
The photoresist 106 of case etches described sacrifice layer 105 and substrate 101, is formed such as Figure 12 institute after removing remaining photoresist 106
The contact hole 107 shown.It should be noted that described contact hole 107 penetrates described substrate 101, to ensure that subsequent deposition is in contact
In hole 107, conductive material can be electrically connected with the metal wire (diagram) under substrate 101.
Then perform step S3, refer to accompanying drawing 14, the sidewall of described contact hole 107 grows sealing coat 108.
Specifically, chemical vapor deposition method can be used to grow sealing coat 108 on the sidewall of described contact hole 107, such as figure
Shown in 13, in growth course, bottom contact hole 107 and sacrifice layer 105 surface also can be deposited last layer sealing coat 108,
Dry etching is utilized to remove bottom and the sealing coat 108 of sacrifice layer 105 excess surface of contact hole 107, it is thus achieved that such as Figure 14 institute
The structure shown.Utilize the sealing coat 108 of growth on contact hole 107 sidewall, be possible to prevent cantilever beam short circuit.
Then perform step S4, refer to accompanying drawing 15～Figure 19, described contact hole 107 is filled conductive material 109, etching
Described conductive material 109 forms several the second grooves 111, in described second groove 111 fill cantilever material 112 until
Cantilever material 112 covers conductive material 109 and sacrifice layer 105 surface.
As shown in figure 15, use conventional chemical vapor deposition method to fill conductive material 109 in contact hole 107, deposited
Cheng Zhong, the surface of sacrifice layer 105 also can deposit last layer conductive material 109, the most as shown in figure 16, utilize dry etching to incite somebody to action
The conductive material 109 on sacrifice layer 105 surface is removed, and makes conductive material 109 surface in contact hole 107 and sacrifice layer 105
Surface flushes.
As example, described conductive material 109 is germanium silicon or polysilicon, it is of course also possible to be other suitable conductive materials.
In the present embodiment, described conductive material 109 is germanium silicon.
The process forming the second groove in conductive material is: in described conductive material 109 and the spin coating photoetching of sacrifice layer 105 surface
Glue 110, and pattern described photoresist 110 through the photoetching process such as overexposure, development, it is thus achieved that structure as shown in figure 17.Again
As shown in figure 18, utilize the photoresist 110 of patterning to etch described conductive material 109, remove 110 shapes after remaining photoresist
Become the second groove 111.
Refer to accompanying drawing 19 again, recycle chemical vapor deposition method formation of deposits cantilever material in described second groove 111
112 until cantilever material 112 covers conductive material 109 and sacrifice layer 105 surface.
As example, described cantilever material 112 can be monocrystal silicon, polysilicon or germanium silicon.In the present embodiment, described outstanding
Arm beam material 112 is germanium silicon.
Finally perform step S5, as shown in figure 20, remove sacrifice layer 105, form cantilever beam structure.
Described sacrifice layer 105 can be removed in the way of using wet etching.After removing sacrifice layer 105, cantilever material 112 hangs
Sky, its one end can move freely, and lower section is right against the dielectric material 104 in substrate 101 in first groove 103, and preventing should
Unsettled cantilever beam adheres to lower substrates 101；Its other end is incorporated in conductive material 109, forms damascene structures, keeps away
The problem exempting from the fracture of root that integral structure of the prior art brings.
Accordingly, the present invention also provides for a kind of MEMS cantilever beam structure, prepared by above-mentioned preparation method, as shown in figure 20,
Described cantilever beam structure at least includes:
Substrate 101, one end of described substrate 101 forms several the first grooves 103, and the other end forms contact hole 107；
Dielectric material 104, is filled in described first groove 103；
Conductive material 109, is filled in described contact hole 107, and described conductive material 109 surface is higher than described substrate 101 table
Face and being kept apart with substrate 101 by sealing coat 108；
Second groove 111, is formed in described conductive material 109；
Cantilever material 112, is formed at the top of described substrate 101 with air for gap, and described cantilever material 112 includes
Move freely end and connect end, described in move freely and below end, be right against described dielectric material 104, described connection end is filled in institute
State in the second groove 111.
As a preferred embodiment, described first groove 103 is provided with 3～5, and the depth bounds of the first groove 103 is
2～4 μm.
As a preferred embodiment, the unsettled distance being more than 3 μm above described substrate 101 of described cantilever material 112,
The i.e. thickness of the air gap is more than 3 μm.
As a preferred embodiment, the degree of depth of described second groove 111 is 8～12 μm.
In sum, the present invention provides a kind of MEMS cantilever beam structure and preparation method thereof, including step: 1) substrate is provided,
The one end etching described substrate forms several the first groove, in the trench filled media materials；2) at described substrate surface
Deposition of sacrificial layer, etches the other end of described sacrifice layer and substrate, forms contact hole；3) grow on the sidewall of described contact hole
Sealing coat；4) in described contact hole, fill conductive material, etch described conductive material and form several the second grooves, described
Second groove fills cantilever material until cantilever material covers conductive material and sacrificial layer surface；5) sacrifice layer, shape are removed
Become cantilever beam structure.The MEMS cantilever beam structure of the present invention, on the one hand increases the first groove filled media material in the substrate
Material, can reduce the contact area between cantilever beam and substrate, reduces electrostatic attraction, thus prevents the generation of cantilever beam free end
Adhere to；On the other hand, the root of cantilever beam connects end and uses Embedded molding structure, can improve root bending torque, fall
Low risk of breakage.
So, the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The principle of above-described embodiment only illustrative present invention and effect thereof, not for limiting the present invention.Any it is familiar with this skill
Above-described embodiment all can be modified under the spirit and the scope of the present invention or change by the personage of art.Therefore, such as
All that in art, tool usually intellectual is completed under without departing from disclosed spirit and technological thought etc.
Effect is modified or changes, and must be contained by the claim of the present invention.
Claims (11)
1. the preparation method of a MEMS cantilever beam structure, it is characterised in that described preparation method at least includes step:
1) providing substrate, the one end etching described substrate forms several the first groove, in the trench filled media materials；
2) in described substrate surface deposition of sacrificial layer, etch the other end of described sacrifice layer and substrate, form contact hole；
3) on the sidewall of described contact hole, sealing coat is grown；
4) in described contact hole, fill conductive material, etch described conductive material and form several the second grooves, described second
Groove fills cantilever material until cantilever material covers conductive material and sacrificial layer surface；
5) remove sacrifice layer, form cantilever beam structure.
The preparation method of MEMS cantilever beam structure the most according to claim 1, it is characterised in that: described step 1) in shape
The process of one-tenth dielectric material is: use physical vapour deposition (PVD) or chemical gaseous phase deposition in the trench and the superficial growth medium of substrate
Material, grinds away the dielectric material of substrate surface afterwards, and described dielectric material is silicon dioxide.
The preparation method of MEMS cantilever beam structure the most according to claim 1, it is characterised in that: described step 2) in
Sacrifice layer is germanium, and the one end using dry etching mode to etch described sacrifice layer and substrate in this step forms contact hole.
The preparation method of MEMS cantilever beam structure the most according to claim 1, it is characterised in that: described step 3) in
Sealing coat is silicon dioxide.
The preparation method of MEMS cantilever beam structure the most according to claim 1, it is characterised in that: described step 4) in fill out
Filling conductive material in the contact hole is germanium silicon.
The preparation method of MEMS cantilever beam structure the most according to claim 1, it is characterised in that: described step 4) in adopt
Forming the second groove by dry etching mode, described cantilever material is monocrystal silicon, polysilicon or germanium silicon.
The preparation method of MEMS cantilever beam structure the most according to claim 1, it is characterised in that: described step 5) in adopt
Described sacrifice layer is removed by the mode of wet etching.
8. the MEMS cantilever beam structure utilizing the method described in claim 1 to prepare, it is characterised in that described MEMS hangs
Arm girder construction at least includes:
Substrate, one end of described substrate forms several the first grooves, and the other end forms contact hole；
Dielectric material, is filled in described first groove；
Conductive material, is filled in described contact hole, and described conductive material surface is higher than described substrate surface and passes through sealing coat
Keep apart with substrate；
Second groove, is formed in described conductive material；
Cantilever material, is formed at the top of described substrate with air for gap, and described cantilever beam includes moving freely end and connecting
Connect end, described in move freely and below end, be right against described dielectric material, described connection end is filled in described second groove.
MEMS cantilever beam structure the most according to claim 8, it is characterised in that: described first groove is 3～5, first
The depth bounds of groove is 2～4 μm.
MEMS cantilever beam structure the most according to claim 8, it is characterised in that: described cantilever material is unsettled at described base
More than the distance of 3 μm at the end.
11. MEMS cantilever beam structures according to claim 8, it is characterised in that: the degree of depth of described second groove is 8～12 μm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108002339A (en) * | 2016-11-02 | 2018-05-08 | 中芯国际集成电路制造(上海)有限公司 | A kind of MEMS device and its manufacture method |
| WO2018132977A1 (en) * | 2017-01-18 | 2018-07-26 | 中国科学院深圳先进技术研究院 | L-type electrostatic-powered micro robot, and manufacturing method and control method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6376787B1 (en) * | 2000-08-24 | 2002-04-23 | Texas Instruments Incorporated | Microelectromechanical switch with fixed metal electrode/dielectric interface with a protective cap layer |
| JP2008155342A (en) * | 2006-12-26 | 2008-07-10 | Nippon Telegr & Teleph Corp <Ntt> | Manufacturing method for micro structure |
| CN101750481A (en) * | 2008-12-12 | 2010-06-23 | 清华大学 | Integrated grating micro-cantilever biochemical sensor and chip manufacturing method |
| CN102158788A (en) * | 2011-03-15 | 2011-08-17 | 迈尔森电子（天津）有限公司 | MEMS (Micro-electromechanical Systems) microphone and formation method thereof |
| CN103472260A (en) * | 2013-08-15 | 2013-12-25 | 北京时代民芯科技有限公司 | MEMS cross beam capacitor accelerometer and manufacture method thereof |
| CN103848390A (en) * | 2012-11-30 | 2014-06-11 | 台湾积体电路制造股份有限公司 | MEMS structure with adaptable inter-substrate bond |
-
2015
- 2015-01-13 CN CN201510016386.XA patent/CN105836697B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6376787B1 (en) * | 2000-08-24 | 2002-04-23 | Texas Instruments Incorporated | Microelectromechanical switch with fixed metal electrode/dielectric interface with a protective cap layer |
| JP2008155342A (en) * | 2006-12-26 | 2008-07-10 | Nippon Telegr & Teleph Corp <Ntt> | Manufacturing method for micro structure |
| CN101750481A (en) * | 2008-12-12 | 2010-06-23 | 清华大学 | Integrated grating micro-cantilever biochemical sensor and chip manufacturing method |
| CN102158788A (en) * | 2011-03-15 | 2011-08-17 | 迈尔森电子（天津）有限公司 | MEMS (Micro-electromechanical Systems) microphone and formation method thereof |
| CN103848390A (en) * | 2012-11-30 | 2014-06-11 | 台湾积体电路制造股份有限公司 | MEMS structure with adaptable inter-substrate bond |
| CN103472260A (en) * | 2013-08-15 | 2013-12-25 | 北京时代民芯科技有限公司 | MEMS cross beam capacitor accelerometer and manufacture method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108002339A (en) * | 2016-11-02 | 2018-05-08 | 中芯国际集成电路制造(上海)有限公司 | A kind of MEMS device and its manufacture method |
| CN108002339B (en) * | 2016-11-02 | 2019-12-31 | 中芯国际集成电路制造(上海)有限公司 | MEMS device and manufacturing method thereof |
| WO2018132977A1 (en) * | 2017-01-18 | 2018-07-26 | 中国科学院深圳先进技术研究院 | L-type electrostatic-powered micro robot, and manufacturing method and control method thereof |
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|---|---|
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