CN105895652A - 高压发光二极管及其制造方法 - Google Patents

高压发光二极管及其制造方法 Download PDF

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CN105895652A
CN105895652A CN201610089248.9A CN201610089248A CN105895652A CN 105895652 A CN105895652 A CN 105895652A CN 201610089248 A CN201610089248 A CN 201610089248A CN 105895652 A CN105895652 A CN 105895652A
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semiconductor layer
substrate
layer
led
electrode
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黄琮训
郭志忠
黄逸儒
沈志铭
黄冠杰
黄靖恩
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Genesis Photonics Inc
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Genesis Photonics Inc
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Abstract

本发明提供一种高压发光二极管及其制造方法，其于基板上具有多个相互串联、并联或串并联的发光二极管晶粒，其中部分发光二极管晶粒的第一半导体层的侧面与基板的侧面切齐，使发光二极管晶粒与基板的边缘之间不保留暴露基板的空间，从而致使基板被发光二极管晶粒的覆盖比例增加，即让单位面积内的发光面积增大，提升了高压发光二极管的出光效率。

Description

高压发光二极管及其制造方法
技术领域
本发明涉及一种发光二极管及其制造方法，尤其涉及一种通过结构上提升出光面积比例而增加出光效率的高压发光二极管及其制造方法。
背景技术
发光二极管(Light Emitting Diode，LED)是一种半导体材料制成的固态发光组件，近年来由于技术的进步及节能风潮的需求，发光二极管的应用范围越来越广。而随着发光二极管应用的升级，其开发方向也朝着更大功率及更高亮度发展。
在不同类型的发光二极管当中，高压发光二极管的效率优于一般传统低压发光二极管，主要可归因为小电流、多晶粒的设计能均匀地将电流扩散开来，进而提升光萃取效率。
在现有的高压发光二极管结构中，于基板上承载多个相互串联之发光二极管晶粒，且任一发光二极管晶粒的周边都存在电性隔离区域而各自独立，独立体之间仅通过金线作电性连接。这些电性隔离区域的面积与高压发光二极管的出光效率息息相关，因为越多的电性隔离区域的面积就意味着有效发光区域越少，故现有技术乃通过高深宽比的制程技术，缩小制程线宽以增加发光效率。
发明内容
本发明的主要目的，提供一种高压发光二极管，于基板上承载有多个发光二极管晶粒，并且位于周边的发光二极管晶粒的侧面与基板的侧面切齐，仅保留任意两个相邻发光二极管晶粒之间存在电性隔离区域，并且于电性隔离区域使基板的表面暴露；换言之，在高压发光二极管的单位面积中，基板暴露的比例减少，而基板被发光二极管晶粒的覆盖比例增加，使单位面积内的发光面积增大，因此提升了高压发光二极管的出光效率。
本发明的另一目的，提供一种高压发光二极管的制造方法，其可沿用现有的发光二极管制程，只要通过微影制程控制发光二极管晶粒的磊晶层图形，就能使单位面积内基板被暴露的比例减少，达到上述的结构特征，获得出光效率提高的效果。此制造方法并不与现有的高压发光二极管制程产生冲突，具可兼容性。
因此，本发明揭示了一种高压发光二极管，其结构包含：一基板；以及多个发光二极管晶粒，位于所述基板的一表面上并且串联、并联或串并联连接，所述多个发光二极管晶粒分别包含依序堆栈的一第一半导体层、一发光层以及一第二半导体层，其中所述高压发光二极管切割面的部分所述多个第一半导体层的至少一第一侧面与所述基板的一基板侧面切齐，所述发光层以及所述第二半导体层的侧面则不与所述第一侧面切齐，与所述第一侧面相交的至少一第二侧面相对于相邻之所述发光二极管晶粒。
而对于上揭发光二极管的制造方法，则包含步骤：成长一磊晶层于一基板上，所述磊晶层具有依序堆栈的一第一半导体层、一发光层以及一第二半导体层；以一微影图案蚀刻所述磊晶层，形成多个发光单元，所述微影图案包含多个环状图形，所述磊晶层于所述多个环状图形的位置被部分移除而使所述第一半导体层暴露，所述多个发光单元以暴露的所述第一半导体层相连接，所述磊晶层于所述多个环状图形之间被部分移除而使所述基板暴露；以及依据至少一切割线，切割所述第一半导体层以及所述基板，使所述多个发光单元分离，形成多个高压发光二极管，所述切割线通过所述多个发光单元间的所述第一半导体层，使所述第一半导体层的至少一第一侧面为一切割面的部分，所述切割线不通过所述发光层以及所述第二半导体层，其中所述高压发光二极管切割面的部分所述多个第一半导体层至少一第一侧面与所述基板的一基板侧面切齐。
藉由上述高压发光二极管的结构以及制作方法，具有更佳出光效率的发光二极管即可被有效实现。
附图说明
图1为本发明一较佳实施例的结构示意图；
图2A～2D为本发明一较佳实施例的制造方法流程示意图；
图3A为本发明另一较佳实施例的结构俯视示意图；
图3B为本发明另一较佳实施例的结构俯视示意图；
图4为本发明于再一较佳实施例中的结构侧视示意图，；
图5为本发明更一较佳实施例中，高压发光二极管具有绝缘层以及金线而为串联连接的结构示意图。
附图标记：
1：基板
10：基板侧面
2：发光单元
21：发光二极管晶粒
3：磊晶层
31：第一半导体层
311：第一侧面
312：第二侧面
32：发光层
33：第二半导体层
34：透明导电层
35：第一电极
36：第二电极
41：第一暴露区
410：电极区域
42：第二暴露区
5：切割线
51：切割面
6：绝缘层
7：金线
8：微影图案
81：环状图形
810：外缘
具体实施方式
为使本发明的特征及所达成的功效有更进一步的了解与认识，仅以较佳的实施例及配合详细说明，说明如后：
首先请参考图1，本发明于一较佳实施例中，所揭示发光二极管在结构上包含了：一基板1以及多个发光二极管晶粒21。发光二极管晶粒21分别包含依序堆栈的一第一半导体层31、一发光层32、一第二半导体层33以及透明导电层34，而其中的第一半导体层31具有至少一第一侧面311以及与第一侧面311相交的至少一第二侧面312。在这两种侧面当中，第一侧面311与基板1的一基板侧面10切齐，第二侧面312则是相对于相邻的发光二极管晶粒21。
进一步而言，发光二极管晶粒21的结构当中仅有第一半导体层31的第一侧面311会与基板侧面10切齐，发光层32以及第二半导体层33侧面则会因为磊晶结构较为内缩而不会与第一侧面311切齐，同时也不会与基板侧面10切齐。通过此结构特征，相邻的发光二极管晶粒21具有一沟槽(Trench),基板1的上方表面仅在相邻的发光二极管晶粒21之间存在表面暴露，藉此作为沟槽(Trench)而将多个的发光二极管晶粒独立开，从而使不同的发光二极管晶粒21得以作电性区隔；而在高压发光二极管邻近于边缘的部分则基于没有作电性区隔的必要性，因此会通过发光二极管晶粒21尽可能地覆盖此区域表面的方式，以提升高压发光二极管的发光面积。
另外在发光二极管晶粒21的结构中，还分别具有第一电极35以及第二电极36，两个分别电性连接于第一半导体层31以及第二半导体层33上的透明导电层34。
请参考图2A～2D，本发明所揭示的高压发光二极管的制造方法包含步骤：
步骤S1：成长一磊晶层于一基板上，所述磊晶层系具有依序堆栈的一第一半导体层、一发光层以及一第二半导体层；
步骤S2：以一蚀刻所述磊晶层，形成多个发光单元，所述微影图案包含多个环状图形，所述磊晶层于所述多个环状图形的位置被部分移除而使所述第一半导体层暴露，所述多个发光单元以暴露的所述第一半导体层相连接，所述磊晶层于所述多个环状图形之间被部分移除而使所述基板暴露；以及
步骤S3：依据至少一切割线，切割所述第一半导体层以及所述基板，使所述多个发光单元分离，形成多个高压发光二极管，所述切割线通过所述多个发光单元间的所述第一半导体层，使所述第一半导体层的至少一第一侧面为一切割面部分，所述切割线不通过所述发光层以及所述第二半导体层，其中所述高压发光二极管切割面的部分所述多个第一半导体层的至少一第一侧面与所述基板之一基板侧面切齐。。
在上述的步骤中，如图2A、2B所示，以蓝宝石基板所构成之基板1上方的第一半导体层31、发光层32以及第二半导体层33经磊晶形成，并通过蚀刻而使部分第一半导体层31、发光层32以及第二半导体层33被移除；藉此操作，部分第一半导体层31会暴露上方表面而为如第2B图所示的第一暴露区41，以及部分基板1会暴露上表面而为第二暴露区42。其中，由于第二暴露区42将第一半导体层21于所述区域范围内完全移除而形成，因此在执行步骤S2时，搭配使用包含多个环状图形81的微影图案8，使整体的磊晶层3结构产生不同程度的蚀刻结果。
进一步而言，在此较佳实施例中，任一环状图形81的外缘810定义一发光二极管晶粒的范围，此外缘810系与任一发光二极管晶粒的第一半导体层31的边缘切齐。换言之，本发明可通过微影图案8的应用，使原为完整的磊晶层3形成多个发光单元，每一发光单元的范围内包含有多个发光二极管晶粒；这些发光单元以暴露的第一半导体层31相连接，意即共享第一暴露区41。
步骤S3依据至少一切割线5，切割第一半导体层31以及基板1，使发光单元分离；如图2C及图2D所示，此实施例将承载有六个发光二极管晶粒21的基板1经于切割线5切割后，形成两个分别具有三个发光二极管晶粒21的发光单元2，也就是两个高压发光二极管。此些高压发光二极管的结构中，因为基板1所承载的发光二极管晶粒21的第一半导体层31的部分第一侧面311与基板1的切割面51切齐，加上其他的第一侧面311与基板1的基板侧面10切齐，因此发光二极管晶粒21尽可能的覆盖了基板1的表面，仅保留第二隔离区42作为电性隔离之用。
本发明的较佳实施例中，切割线5的选择通过所述多个发光单元间的第一半导体层31，使第一半导体层31的至少一第一侧面311为切割面51的部分；且切割线5不通过发光层32以及第二半导体层33。换言之，切割线5系沿着微影图案8当中所定义的发光二极管晶粒范围的部分边缘进行切割，以使高压发光二极管仅保留任意两个相邻的发光二极管晶粒21之间存在电性隔离区域，而不会在高压发光二极管的周边预留空间让基板1的表面暴露。
另外，在切割第一半导体层以及基板之步骤前，本发明于此较佳实施例还包含步骤S3-1为：成长多个第一电极以及多个第二电极，使所述多个第一电极以及所述多个第二电极分别电性连接于所述第一半导体层以及所述第二半导体层上的一透明导电层。此步骤系使发光二极管晶粒分别具有第一电极35以及第二电极36，如图2C所示。
请参考图3A，本发明于另一较佳实施例中，可利用微影图案的设计，使基板1上的发光二极管晶粒有不同的排列方式或组合。如图所示，此基板1上承载三十六个发光二极管晶粒，并可区分为九组发光单元，可通过数条切割线5对第一半导体层以及基板作切割，使九个发光单元分离，形成九个高压发光二极管。图3B为切割后所得的发光单元2之单体，包含四个发光二极管晶粒21，且基板1仅有在发光二极管晶粒21之间具有一沟槽(Trench),且基板的表面暴露，并没有在发光单元2靠近周围的部分有环绕式的暴露态样，为一种具有高出光面积的形式。本发明并不特别限制任一发光单元(高压发光二极管)所具有的发光二极管晶粒数量，所述数量受相关产品所需要的电压值而可自由设计调整。
请参考图4的再一较佳实施例，由切割前的侧视图可知，暴露的第一半导体层21包含至少一电极区域410。此电极区域410用以设置前述的第一电极35，且电极区域410不与切割线5的位置重叠，不会被切割的步骤所影响。
请参考图5的更一较佳实施例，在本发明的高压发光二极管的结构中，发光二极管晶粒21之间可包含一绝缘层6，其由绝缘物质所构成而填充于发光二极管晶粒21之间的电性隔离区域(如前述之第二暴露区42)，发光二极管晶粒21之间则是靠金线7达成电性连接，经串联而达到组成高压发光二极管的目的。
综上所述，本发明详细揭示了一种高压发光二极管及其制造方法，其减少基板在高压发光二极管中所暴露面积的比例，也就是让基板被发光二极管晶粒的覆盖比例增加，从而使单位面积中的出光面积比例提高，因此提升了高压发光二极管的出光效率。再者，本发明在提升出光效率之余，又不需要在制程上造成过度的负担，只要通过微影制程的调整与控制，就可改变发光二极管晶粒在基板上的分布态样。故总结而言，本发明确实为一种具有高应用价值的高压发光二极管及其制造方法。
以上所述，仅为本发明的较佳实施例而已，并非用来限定本发明实施的范围，举凡依本发明申请专利范围所述形状、构造、特征及精神所做的均等变化与修饰，均应包括于本发明的申请专利范围内。

Claims (10)

1.一种高压发光二极管，其特征在于，其结构包含：
一基板；以及
多个发光二极管晶粒，位于所述基板之一表面上并且串联连接，所述多个发光二极管晶粒分别包含依序堆栈的一第一半导体层、一发光层以及一第二半导体层，部分所述多个第一半导体层的至少一第一侧面与所述基板之一基板侧面切齐，且与所述第一侧面相交的至少一第二侧面相对于相邻的所述发光二极管晶粒具有一沟槽且暴露基板的表面。
2.根据权利要求1所述的高压发光二极管，其特征在于，所述多个发光二极管晶粒还包含一第一电极以及一第二电极，分别电性连接于所述第一半导体层以及所述第二半导体层。
3.根据权利要求1所述的高压发光二极管，其特征在于，所述多个发光二极管晶粒还包含一透明导电层，配置于所述第二半导体层与所述第二电极之间。
4.根据权利要求1所述的高压发光二极管，其特征在于，所述多个发光二极管晶粒之间包含一绝缘层。
5.根据权利要求1所述的高压发光二极管，其特征在于，多个发光二极管晶粒，位于所述基板的一表面上更可为一并联或串并联电性连接。
6.根据权利要求1所述的高压发光二极管，其特征在于，所述高压发光二极管切割面的部分所述多个第一半导体层的至少一第一侧面与所述基板的一基板侧面切齐。
7.一种高压发光二极管的制造方法，其特征在于，包含步骤：
成长一磊晶层于一基板上，所述磊晶层具有依序堆栈的一第一半导体层、一发光层以及一第二半导体层；
以一微影图案蚀刻所述磊晶层，形成多个发光单元，所述微影图案包含多个环状图形，所述磊晶层于所述多个环状图形的位置被部分移除而使所述第一半导体层暴露，所述多个发光单元以暴露的所述第一半导体层相连接，所述磊晶层于所述多个环状图形之间被部分移除而使所述基板暴露；以及
依据至少一切割线，切割所述第一半导体层以及所述基板，使所述多个发光单元分离，形成多个高压发光二极管，所述切割线通过所述多个发光单元间的所述第一半导体层，使所述第一半导体层的至少一第一侧面为一切割面的部分，所述切割线系不通过所述发光层以及所述第二半导体层。
8.根据权利要求7所述的高压发光二极管的制造方法，其特征在于，于依据所述切割线，切割所述第一半导体层以及所述基板的步骤前，还包含步骤：
成长多个第一电极以及多个第二电极，使所述多个第一电极以及所述多个第二电极分别电性连接于所述第一半导体层以及所述第二半导体层上的一透明导电层。
9.根据权利要求8所述的高压发光二极管的制造方法，其特征在于，暴露的所述第一半导体层包含至少一电极区域，用以设置所述多个第一电极，且所述多个电极区域不与所述切割线的位置重叠。
10.根据权利要求7所述的高压发光二极管的制造方法，其特征在于，所述多个环状图形的外缘分别定义一发光二极管晶粒的范围。
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