CN105895762A - 发光组件 - Google Patents

发光组件 Download PDF

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Publication number
CN105895762A
CN105895762A CN201610089098.1A CN201610089098A CN105895762A CN 105895762 A CN105895762 A CN 105895762A CN 201610089098 A CN201610089098 A CN 201610089098A CN 105895762 A CN105895762 A CN 105895762A
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layer
conductive region
luminescence component
conducting layer
electrode
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郭祐祯
兰彦廷
黄靖恩
赖腾宪
康凯舜
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Genesis Photonics Inc
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Genesis Photonics Inc
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Abstract

本发明提供一种发光组件，包括一磊晶结构、一第一电极、一导电层以及一第二电极。磊晶结构包括一基板、一第一半导体层、一发光层以及一第二半导体层。第一电极设置于第一半导体层上。导电层设置于第二半导体层上，且导电层包括一第一导电区域以及一第二导电区域，其中第一导电区域的电阻小于第二导电区域的电阻。第二电极设置于导电层上，且第二电极具有一延伸部，其中延伸部朝第一电极的方向延伸，且第一导电区域与延伸部至少部分重叠。

Description

发光组件
技术领域
本发明涉及一种发光组件，尤其涉及一种可有效提高发光效率的发光组件。
背景技术
请参阅图1，图1为先前技术的发光组件1的俯视示意图。如图1所示，发光组件1包括一磊晶结构10、一N型电极12、一导电层14以及一P型电极16，其中磊晶结构10包括一N型半导体层18以及一P型半导体层20。一般而言，磊晶结构10另包括一发光层(未显示)，介于N型半导体层18与P型半导体层20之间。N型电极12设置于N型半导体层18上，导电层14设置于P型半导体层20上，且P型电极16设置于导电层14上。P型电极16具有一延伸部160，且延伸部160朝N型电极12的方向延伸。
当在N型电极12与P型电极16之间施加电压时，电流自P型电极16流入，流经P型半导体层20、发光层、N型半导体层18，最后经N型电极12流出。然而，电流在流动过程中会趋向于寻找电阻最小的路径。如图1所示，P型电极16的延伸部160较接近N型电极12，因此延伸部160的导电路径的总电阻比P型电极16其它位置的总电阻小，使得大部分的电流会选择总电阻较小的延伸部160进行流动，进而在延伸部160造成电流聚集(currentcrowding)效应。换言之，电流会趋向于从更接近N型电极12的位置进入N型半导体层18，因此在距离N型电极12较远的位置流入发光层的电流强度较小，其发光强度不及接近于N型电极12的区域。此会造成发光组件1的发光亮度分布不均匀，进而降低发光组件1的发光效率。
发明内容
本发明提供一种可有效增加电流分布均匀性的发光组件，以解决上述问题。
根据一实施例，本发明的发光组件包括一磊晶结构、一第一电极、一导电层以及一第二电极。磊晶结构包括一基板、一第一半导体层、一发光层以及一第二半导体层。第一电极设置于第一半导体层上。导电层设置于第二半导体层上，且导电层包括一第一导电区域以及一第二导电区域，其中第一导电区域的电阻小于第二导电区域的电阻。第二电极设置于导电层上，且第二电极具有一延伸部，其中延伸部朝第一电极的方向延伸，且第一导电区域与延伸部至少部分重叠。
在一实施例中，第一导电区域的厚度大于第二导电区域的厚度。
在一实施例中，第一导电区域的掺杂浓度大于第二导电区域的掺杂浓度。
综上所述，本发明将导电层划分为电阻较小的第一导电区域与电阻较大的第二导电区域，且使电阻较小的第一导电区域与第二电极的延伸部至少部分重叠。藉此，即可使自第二电极流入的电流均匀扩散(current spreading)，进而提高发光组件的发光效率。需说明的是，本发明可使第一导电区域的厚度大于第二导电区域的厚度，或使第一导电区域的掺杂浓度大于第二导电区域的掺杂浓度，以使第一导电区域的电阻小于第二导电区域的电阻，视实际应用而定。
关于本发明的优点与精神可以藉由以下的发明详述及附图得到进一步的了解。
附图说明
图1为先前技术的发光组件的俯视示意图；
图2为根据本发明第一实施例的发光组件的俯视示意图；
图3为图2中的发光组件沿X-X线的剖面示意图；
图4为根据本发明第二实施例的发光组件的剖面示意图；
图5为根据本发明第三实施例的发光组件的剖面示意图；
图6为根据本发明第四实施例的发光组件的俯视示意图；
图7为根据本发明第五实施例的发光组件的俯视示意图；
图8为根据本发明第六实施例的发光组件的俯视示意图；
图9为根据本发明第七实施例的发光组件的俯视示意图。
附图标记：
1、3、5、7、9、11、13、15：发光组件
10、30：磊晶结构
12：N型电极
14、34、34'：导电层
16：P型电极
18：N型半导体层
20：P型半导体层
32：第一电极
36：第二电极
38：基板
40：第一半导体层
42：发光层
44：第二半导体层
46：电流阻挡层
160、360：延伸部
340：第一子导电层
342：第二子导电层
A1：第一导电区域
A2：第二导电区域
C：中心
E：边缘
L、Lt：长度
T1、T2：厚度
X-X：剖面线
具体实施方式
请参阅图2以及图3，图2为根据本发明第一实施例的发光组件3的俯视示意图，图3为图2中的发光组件3沿X-X线的剖面示意图。如图2与图3所示，发光组件3包括一磊晶结构30、一第一电极32、一导电层34以及一第二电极36，其中磊晶结构30包括一基板38、一第一半导体层40、一发光层42以及一第二半导体层44。于实际应用中，发光组件3可为发光二极管(light emitting diode，LED)。第一半导体层40位于基板38上，发光层42位于第一半导体层40上，且第二半导体层44位于发光层42上。基板38的材料可为蓝宝石，但不以此为限。第一电极32设置于第一半导体层40上，导电层34设置于第二半导体层44上，且第二电极36设置于导电层34上。第一半导体层40可为N型半导体层(例如，N型氮化镓层)，且第二半导体层44可为P型半导体层(例如，P型氮化镓层)。此时，第一电极32即为N型电极，且第二电极36即为P型电极。导电层34的材料可为铟锡氧化物(Indium Tin Oxide，ITO)、氧化锌(ZnO)或其它导电材料。此外，发光组件3可另包括一电流阻挡层46(current block layer，CBL)，设置于导电层34与磊晶结构30之间，用以提供电流阻挡作用，以改善发光组件3的发光效率和输出光功率。
导电层34包括一第一导电区域A1以及一第二导电区域A2，其中第一导电区域A1的厚度T1大于第二导电区域A2的厚度T2，使得第一导电区域A1的电阻小于第二导电区域A2的电阻。于此实施例中，导电层34可包括一第一子导电层340以及一第二子导电层342，其中第一子导电层340于基板38上的投影面积小于第二子导电层342于基板38上的投影面积。如图3所示，第二子导电层342设置于第二半导体层44上，且第一子导电层340设置于第二子导电层342上，使得第一子导电层340与第二子导电层342重叠的区域形成第一导电区域A1，且未与第一子导电层340重叠的第二子导电层342形成第二导电区域A2。需说明的是，第一子导电层340与第二子导电层342的材料可相同或不同，视实际应用而定。
如图2所示，第二电极36具有一延伸部360，其中延伸部360朝第一电极32的方向延伸，且第一导电区域A1与延伸部360至少部分重叠。由于第一导电区域A1的电阻小于第二导电区域A2的电阻，因此，自第二电极36流入的电流即会均匀扩散流经第二半导体层44、发光层42、第一半导体层40，最后经第一电极32流出，减缓延伸部360尾端(亦即，延伸部360靠近第一电极32的一端)所造成的电流聚集(current crowding)效应，进而提高发光组件3的发光效率。
在一实施例中，第一导电区域A1于平行延伸部360的方向上的长度L可大于或等于第二电极36于平行延伸部360的方向上的总长度Lt的1/2，以增进电流均匀扩散(current spreading)。在一实施例中，第一导电区域A1的一边缘E可介于延伸部360的中心C与第一电极32之间，以增进电流均匀扩散。
配合图3，请参阅图4，图4为根据本发明第二实施例的发光组件5的剖面示意图。发光组件5与上述的发光组件3的主要不同之处在于，发光组件5的第一子导电层340设置于第二半导体层44上，且第二子导电层342设置于第一子导电层340与第二半导体层44上，使得第一子导电层340与第二子导电层342重叠的区域形成第一导电区域A1，且未与第一子导电层340重叠的第二子导电层342形成第二导电区域A2。换言之，本发明可根据实际应用将第一子导电层340设置于第二子导电层342上或将第一子导电层340设置于第二半导体层44与第二子导电层342之间。
配合图3，请参阅图5，图5为根据本发明第三实施例的发光组件7的剖面示意图。发光组件7与上述的发光组件3的主要不同之处在于，发光组件7的导电层34'具有相同厚度的第一导电区域A1与第二导电区域A2，其中第一导电区域A1的掺杂浓度大于第二导电区域A2的掺杂浓度，使得第一导电区域A1的电阻小于第二导电区域A2的电阻。举例而言，若导电层34的材料为ITO，上述的掺杂浓度可定义为ITO所掺杂的锡(Sn)的浓度。换言之，本发明可使第一导电区域A1的厚度T1大于第二导电区域A2的厚度T2，或使第一导电区域A1的掺杂浓度大于第二导电区域A2的掺杂浓度，以使第一导电区域A1的电阻小于第二导电区域A2的电阻，视实际应用而定。
配合图2，请参阅图6至图9，图6为根据本发明第四实施例的发光组件9的俯视示意图，图7为根据本发明第五实施例的发光组件11的俯视示意图，图8为根据本发明第六实施例的发光组件13的俯视示意图，图9为根据本发明第七实施例的发光组件15的俯视示意图。本发明的第一子导电层340除了可设计成如图2所示的图案外，亦可设计成如图6至图9所示的图案。换言之，本发明可根据实际应用将第一子导电层340设计成如图2与图6至图9所示的图案，或其它图案，不以图2所示的图案为限。于图6至图9所示的实施例中，本发明亦可根据实际应用将第一子导电层340设置于第二子导电层342上(如图3所示)或将第一子导电层340设置于第二半导体层44与第二子导电层342之间(如图4所示)。
综上所述，本发明将导电层划分为电阻较小的第一导电区域与电阻较大的第二导电区域，且使电阻较小的第一导电区域与第二电极的延伸部至少部分重叠。藉此，即可使自第二电极流入的电流均匀扩散，进而提高发光组件的发光效率。需说明的是，本发明可使第一导电区域的厚度大于第二导电区域的厚度，或使第一导电区域的掺杂浓度大于第二导电区域的掺杂浓度，以使第一导电区域的电阻小于第二导电区域的电阻，视实际应用而定。
以上所述仅为本发明的较佳实施例，凡依本发明权利要求所做的均等变化与修饰，皆应属本发明的涵盖范围。

Claims (10)

1.一种发光组件，其特征在于，包括：
一磊晶结构，包括一基板、一第一半导体层、一发光层以及一第二半导体层；
一第一电极，设置于所述第一半导体层上；
一导电层，设置于所述第二半导体层上，所述导电层包括一第一导电区域以及一第二导电区域，所述第一导电区域的电阻小于所述第二导电区域的电阻；以及
一第二电极，设置于所述导电层上，所述第二电极具有一延伸部，所述延伸部朝所述第一电极的方向延伸，所述第一导电区域与所述延伸部至少部分重叠。
2.根据权利要求1所述的发光组件，其特征在于，所述第一导电区域的厚度大于所述第二导电区域的厚度。
3.根据权利要求1所述的发光组件，其特征在于，所述导电层包括一第一子导电层以及一第二子导电层，所述第一子导电层于所述基板上的投影面积小于所述第二子导电层于所述基板上的投影面积，所述第一子导电层与所述第二子导电层重叠的区域形成所述第一导电区域，未与所述第一子导电层重叠的所述第二子导电层形成所述第二导电区域。
4.根据权利要求3所述的发光组件，其特征在于，所述第二子导电层设置于所述第二半导体层上，且所述第一子导电层设置于所述第二子导电层上。
5.根据权利要求3所述的发光组件，其特征在于，所述第一子导电层设置于所述第二半导体层上，且所述第二子导电层设置于所述第一子导电层与第二半导体层上。
6.根据权利要求1所述的发光组件，其特征在于，所述第一导电区域的掺杂浓度大于所述第二导电区域的掺杂浓度。
7.根据权利要求6所述的发光组件，其特征在于，所述导电层的材料为铟锡氧化物。
8.根据权利要求1所述的发光组件，其特征在于，所述第一导电区域于平行所述延伸部的方向上的长度大于或等于所述第二电极于平行所述延伸部的方向上的总长度的1/2。
9.根据权利要求1所述的发光组件，其特征在于，所述第一导电区域的一边缘介于所述延伸部的中心与所述第一电极之间。
10.根据权利要求1所述的发光组件，其特征在于，还包括一电流阻挡层设置于所述导电层与所述磊晶结构之间。
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