CN105895763A - 发光二极管芯片 - Google Patents

发光二极管芯片 Download PDF

Info

Publication number
CN105895763A
CN105895763A CN201610089246.XA CN201610089246A CN105895763A CN 105895763 A CN105895763 A CN 105895763A CN 201610089246 A CN201610089246 A CN 201610089246A CN 105895763 A CN105895763 A CN 105895763A
Authority
CN
China
Prior art keywords
layer
light
emitting diode
diode chip
backlight unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610089246.XA
Other languages
English (en)
Inventor
赖腾宪
郭祐祯
康凯舜
兰彦廷
黄靖恩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Genesis Photonics Inc
Original Assignee
Genesis Photonics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Genesis Photonics Inc filed Critical Genesis Photonics Inc
Publication of CN105895763A publication Critical patent/CN105895763A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape

Abstract

本发明提供一种发光二极管芯片，包括半导体组件层、第一电极、电流阻挡层、电流分散层以及第二电极。半导体组件层包括第一型掺杂半导体层、发光层以及第二型掺杂半导体层。电流阻挡层包括主体以及多个分别从主体朝向第一电极延伸的延伸部。电流分散层覆盖电流阻挡层。第二电极配置于电流分散层上，且包括焊垫以及多个从焊垫延伸的指部。这些指部位于这些延伸部上方，其中这些延伸部的宽度大于对应指部的宽度，延伸部沿着一排列方向排列，且在排列方向上，较靠近发光二极管芯片边缘的延伸部具有较小的宽度。本发明具有电流阻挡层以有效控制电流聚集的位置，进而有效提升发光效率。

Description

发光二极管芯片
技术领域
本发明涉及一种发光组件，尤其涉及一种发光二极管(Light-EmittingDiode，LED)芯片。
背景技术
随着半导体科技的进步，现今的发光二极管已具备了高亮度与高演色性等特性，加上发光二极管具有省电、体积小、低电压驱动以及不含汞等优点，发光二极管已广泛地应用在显示器与照明等领域。一般而言，发光二极管芯片的发光效率与发光二极管芯片的内部量子效率(即光取出率)相关。当发光层所发出的光线有更多比率可以穿透出发光二极管芯片时，代表着发光二极管芯片的内部量子效率较佳。发光二极管芯片的电极通常是由金属材质所制造，由于金属材质的不透光性，发光二极管芯片上被电极覆盖的区域所发出的光线无法有效的被利用。如此一来，会造成电能的浪费。因此，已知已发展出一种在电极与半导体组件层之间制作电流阻挡层的技术，然而，通过电流阻挡层来提升发光二极管芯片的发光效率仍然存在许多改善的空间。因此，如何进一步提升发光二极管芯片的发光效率，实为目前研发人员研发的重点之一。
发明内容
本发明提供一种发光二极管芯片，其具有电流阻挡层以有效控制电流聚集的位置，进而有效提升发光效率。
本发明提供一种发光二极管芯片，其包括一半导体组件层、一第一电极、一电流阻挡层、一电流分散层以及一第二电极。半导体组件层包括一第一型掺杂半导体层、一发光层以及一第二型掺杂半导体层，其中发光层位于第一型掺杂半导体层与第二型掺杂半导体层之间。第一电极与第一型掺杂半导体层电性连接。电流阻挡层配置于第二型掺杂半导体层上，电流阻挡层包括一主体以及多个分别从主体朝向第一电极延伸的延伸部。电流分散层配置于第二型掺杂半导体层上以覆盖电流阻挡层。第二电极与第二型掺杂半导体层电性连接。第二电极包括一焊垫以及多个从焊垫延伸的指部，且多个指部位于延伸部上方，其中多个延伸部的宽度大于对应指部的宽度，多个延伸部沿着一排列方向排列，且在此排列方向上，较靠近发光二极管芯片边缘的延伸部具有较小的宽度。
在本发明的一实施例中，上述发光层配置于第一型掺杂半导体层上以暴露出部分第一型掺杂半导体层，且第一电极配置于发光层所暴露出的部分第一型掺杂半导体层上。
在本发明的一实施例中，上述的多个指部具有相同的宽度。
在本发明的一实施例中，上述的电流分散层的材质包括透明导电材料。
在本发明的一实施例中，上述的多个指部的数量与多个延伸部数量相同，且多个指部的数量大于2。
在本发明的一实施例中，上述的焊垫位于主体上方，且第二电极经由电流分散层与第二型掺杂半导体层电性连接。
在本发明的一实施例中，上述的焊垫贯穿电流分散层与主体，且焊垫与第二型掺杂半导体层接触。
在本发明的一实施例中，上述的电流分散层覆盖被焊垫贯穿的主体的侧壁。
在本发明的一实施例中，上述的电流分散层未覆盖被焊垫贯穿的主体的一侧壁。
在本发明的一实施例中，上述贯穿电流分散层与主体的焊垫会与主体的一侧壁接触。
基于上述，本发明实施例的发光二极管芯片通过电流阻挡层以及第二电极的设计，可控制电流聚集的位置，因此本发明的发光二极管芯片具有良好的发光效率。
为让本发明的上述特征和优点能更明显易懂，下文特举实施例，并配合附图作详细说明如下。
附图说明
图1A是依据本发明实施例的发光二极管芯片的剖面图；
图1B是依据本发明实施例的发光二极管芯片的上视图；
图1C是依据本发明另一实施例的发光二极管芯片的上视图；
图2是依据本发明另一实施例的发光二极管芯片的剖面图；
图3是依据本发明另一实施例的发光二极管芯片的剖面图。
附图标记：
100a、100b、100c：发光二极管芯片
110：半导体组件层
112：第一型掺杂半导体层
114：发光层
116：第二型掺杂半导体层
120：第一电极
130：电流阻挡层
132：主体
134：延伸部
140：电流分散层
150：第二电极
152：焊垫
154：指部
160：缓冲层
D：排列方向
E：边缘
S：侧壁
SUB：基板
具体实施方式
图1A是依据本发明实施例的发光二极管芯片的剖面图。图1B是依据本发明实施例的发光二极管芯片的上视图。图1C是依据本发明另一实施例的不同发光二极管芯片的上视图。
请参照图1A以及图1B，本实施例的发光二极管芯片100a包括一半导体组件层110、一第一电极120、一电流阻挡层130、一电流分散层140以及一第二电极150。半导体组件层110包括一第一型掺杂半导体层112、一发光层114以及一第二型掺杂半导体层116，其中发光层114位于第一型掺杂半导体层112与第二型掺杂半导体层116之间。第一电极120与第一型掺杂半导体层112电性连接。电流阻挡层130配置于第二型掺杂半导体层116上，且电流阻挡层130包括一主体132以及多个分别从主体132朝向第一电极120延伸的延伸部134。电流分散层140配置于第二型掺杂半导体层116上以覆盖电流阻挡层130。第二电极150经由电流分散层140与第二型掺杂半导体层116电性连接，其中第二电极150包括一焊垫152以及多个从焊垫152延伸的指部154，焊垫152位于主体132上方，而这些指部154位于这些延伸部134上方，其中这些延伸部134的宽度大于对应指部154的宽度，这些延伸部134沿着一排列方向D排列，且在此排列方向D上，较靠近发光二极管芯片100a边缘E的延伸部134具有较小的宽度。其中，这些延伸部134的延伸方向与排列方向D垂直。具体而言，本实施例中的指部154以及延伸部134的数量相等且皆为三个。然而，本实施例并不限定指部154以及延伸部134的数量。此外，在本实施例中，指部154具有相同的宽度，于其他实施例中，指部154可具有不同的宽度。
一般来说，施加于第二电极150的驱动电流主要的方向会由第二电极150至第一电极120。但在本实施例中，较靠近发光二极管芯片100a边缘E的延伸部134相对于在发光二极管芯片100a中心部分的延伸部134具有较小的宽度。换言之，较靠近发光二极管芯片100a中心部分的延伸部134较能有效的阻挡来自于第二电极150的电流，而较靠近发光二极管芯片100a边缘E的延伸部134的阻挡效果较不明显。因此，本实施例可以通过指部154和对应的延伸部134在发光二极管芯片100a不同区域的宽度设计来控制发光二极管芯片100a中电流聚集区域的位置，进而提升发光二极管芯片100a的发光效率。
在本实施例中，发光层114配置于第一型掺杂半导体层112上以暴露出部分的第一型掺杂半导体层112，且第一电极120配置于发光层114所暴露出的部分第一型掺杂半导体层112上。换言之，本实施例的发光二极管芯片100a为水平式(horizontal type)发光二极管芯片。举例而言，半导体组件层110中的第一型掺杂半导体层112例如为N型掺杂半导体层，而第二型掺杂半导体层116例如为P型掺杂半导体层，且发光层114例如由多个交替堆栈的井层(well layers)以及阻障层(barrier layer)所构成的多重量子井层(Multiple Quantum Well，MQW)。此外，本实施例的半导体组件层110例如是通过磊晶制程制作于一基板SUB上，而此基板SUB可为蓝宝石基板、硅基板、碳化硅基板等。
值得注意的是，前述的半导体组件层110可进一步包括一缓冲层160，此缓冲层160通常会在第一型掺杂半导体层112制作之前，先形成于基板SUB上。换言之，缓冲层160可选择性地形成于基板SUB与半导体组件层110之间，以提供适当应力释放并且改善后续形成的薄膜的磊晶品质。
在本实施例中，第一电极120例如是与第一型掺杂半导体层112具有良好欧姆接触的金属材质，电流阻挡层130的材质例如是介电层，电流分散层140的材质例如是透明导电材料，而第二电极150例如是与电流分散层140具有良好欧姆接触的金属材质。举例而言，第一电极120的材质包括金(Au)、钛(Ti)或铝(Al)等导电材料，电流阻挡层130的材质包括硅氧化物(SiOx)或氮化硅(SiNx)等介电材料，电流分散层140的材质包括铟锡氧化物(ITO)、铟锌氧化物(IZO)等透明导电材料；而第二电极150的材质包括金(Au)、钛(Ti)或铝(Al)等导电材料。
下述实施例沿用前述实施例的组件标号与部分内容，其中采用相同的标号来表示相同或近似的组件，并且省略了相同技术内容的说明。关于省略部分的说明可参考前述实施例，下述实施例不再重复赘述。
图1C是依据本发明另一实施例的不同发光二极管芯片的上视图。请参照图1C，具体而言，本实施例之指部154以及延伸部134的数量相等且皆为五个。然而，本实施例并不限定指部154以及延伸部134的数量必须为奇数，指部154以及延伸部134的数量亦可以偶数。
在前述的实施例中，指部154以及对应的延伸部134的数量可用以控制发光二极管芯片100a中电流聚集区域的密度，以其能进一步的提升发光二极管芯片100a的发光效率。
图2是依据本发明另一实施例的发光二极管芯片的剖面图。请参照图2，在本实施例的发光二极管芯片100b与前述实施例的发光二极管芯片100a主要的差异在于：在本实施例中，焊垫152贯穿电流分散层140与主体132，且焊垫152与第二型掺杂半导体层116接触，其中电流分散层140覆盖被焊垫152贯穿的主体132的一侧壁S。
图3是依据本发明另一实施例的不同发光二极管芯片的剖面图。请参照图3，在本实施例的发光二极管芯片100c与前述实施例的发光二极管芯片100b主要的差异在于：在本实施例中，电流分散层140未覆盖被焊垫152贯穿的主体132的一侧壁S。换言之，贯穿电流分散层140与主体132的焊垫152会直接与主体132的侧壁S接触或连接。
相较于发光二极管芯片100a，在前述的实施例所提到的发光二极管芯片(100b或100c)的配置方式，可以更进一步提升第二电极150与发光二极管芯片(100b或100c)的黏着性，可以避免第二电极150与发光二极管芯片(100b或100c)剥离。
应注意的是，虽然图1B与图1C所显示的配置方式以发光二极管芯片100a为例，但是图2与图3所显示的发光二极管芯片(100a或100c)也可以具有如同图1B与图1C所显示的配置方式。
综上所述，本发明的发光二极管芯片中通过电流阻挡层以及第二电极的设计，可控制电流聚集的位置，因此本发明的发光二极管芯片具有良好的发光效率。此外，焊垫贯穿电流分散层与主体，可以提升第二电极与发光二极管芯片的黏着性，避免第二电极与发光二极管芯片剥离。
虽然本发明已以实施例揭示如上，然其并非用以限定本发明，任何所属技术领域中普通技术人员，在不脱离本发明的精神和范围内，当可作些许的改动与润饰，故本发明的保护范围当视所附权利要求界定范围为准。

Claims (10)

1.一种发光二极管芯片，其特征在于，包括：
一半导体组件层，包括一第一型掺杂半导体层、一发光层以及一第二型掺杂半导体层，其中所述发光层位于所述第一型掺杂半导体层与所述第二型掺杂半导体层之间；
一第一电极，与所述第一型掺杂半导体层电性连接；
一电流阻挡层，配置于所述第二型掺杂半导体层上，所述电流阻挡层包括一主体以及多个延伸部；
一电流分散层，配置于所述第二型掺杂半导体层上以覆盖所述电流阻挡层；以及
一第二电极，配置于所述电流分散层上，所述第二电极包括一焊垫以及多个从所述焊垫延伸的指部，且所述多个指部位于所述多个延伸部上方，其中所述多个延伸部的宽度大于对应指部的宽度，且较靠近发光二极管芯片边缘的延伸部具有较小的宽度。
2.根据权利要求1所述的发光二极管芯片，其特征在于，所述发光层配置于所述第一型掺杂半导体层上以暴露出部分所述第一型掺杂半导体层，且所述第一电极配置于所述发光层所暴露出的部分所述第一型掺杂半导体层上。
3.根据权利要求1所述的发光二极管芯片，其特征在于，所述多个指部具有相同的宽度。
4.根据权利要求1所述的发光二极管芯片，其特征在于，所述电流分散层的材质包括透明导电材料。
5.根据权利要求1所述的发光二极管芯片，其特征在于，所述多个指部的数量与所述多个延伸部数量相同，且所述多个指部的数量大于2。
6.根据权利要求1所述的发光二极管芯片，其特征在于，所述焊垫位于所述主体上方，且所述第二电极经由所述电流分散层与所述第二型掺杂半导体层电性连接。
7.根据权利要求1所述的发光二极管芯片，其特征在于，所述焊垫贯穿所述电流分散层与所述主体，且所述焊垫与所述第二型掺杂半导体层接触。
8.根据权利要求7所述的发光二极管芯片，其特征在于，所述电流分散层覆盖被所述焊垫贯穿的所述主体的一侧壁。
9.根据权利要求7所述的发光二极管芯片，其特征在于，所述电流分散层未覆盖被所述焊垫贯穿的所述主体的一侧壁。
10.根据权利要求7所述的发光二极管芯片，其特征在于，贯穿所述电流分散层与所述主体的所述焊垫与所述主体的一侧壁接触。
CN201610089246.XA 2015-02-17 2016-02-17 发光二极管芯片 Pending CN105895763A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562116923P 2015-02-17 2015-02-17
US62/116,923 2015-02-17

Publications (1)

Publication Number Publication Date
CN105895763A true CN105895763A (zh) 2016-08-24

Family

ID=56622502

Family Applications (9)

Application Number Title Priority Date Filing Date
CN201911295478.0A Pending CN110993766A (zh) 2015-02-17 2016-02-17 发光元件
CN201911295322.2A Pending CN111081839A (zh) 2015-02-17 2016-02-17 发光元件
CN201911296398.7A Pending CN111081840A (zh) 2015-02-17 2016-02-17 发光元件
CN201610089089.2A Expired - Fee Related CN105895792B (zh) 2015-02-17 2016-02-17 发光组件
CN201610089097.7A Pending CN105895790A (zh) 2015-02-17 2016-02-17 发光元件及其制作方法
CN201610089098.1A Pending CN105895762A (zh) 2015-02-17 2016-02-17 发光组件
CN201610089246.XA Pending CN105895763A (zh) 2015-02-17 2016-02-17 发光二极管芯片
CN201610088344.1A Active CN105895774B (zh) 2015-02-17 2016-02-17 发光元件
CN201610089248.9A Pending CN105895652A (zh) 2015-02-17 2016-02-17 高压发光二极管及其制造方法

Family Applications Before (6)

Application Number Title Priority Date Filing Date
CN201911295478.0A Pending CN110993766A (zh) 2015-02-17 2016-02-17 发光元件
CN201911295322.2A Pending CN111081839A (zh) 2015-02-17 2016-02-17 发光元件
CN201911296398.7A Pending CN111081840A (zh) 2015-02-17 2016-02-17 发光元件
CN201610089089.2A Expired - Fee Related CN105895792B (zh) 2015-02-17 2016-02-17 发光组件
CN201610089097.7A Pending CN105895790A (zh) 2015-02-17 2016-02-17 发光元件及其制作方法
CN201610089098.1A Pending CN105895762A (zh) 2015-02-17 2016-02-17 发光组件

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN201610088344.1A Active CN105895774B (zh) 2015-02-17 2016-02-17 发光元件
CN201610089248.9A Pending CN105895652A (zh) 2015-02-17 2016-02-17 高压发光二极管及其制造方法

Country Status (3)

Country Link
US (10) US20160240741A1 (zh)
CN (9) CN110993766A (zh)
TW (12) TWI583019B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108281523A (zh) * 2017-01-06 2018-07-13 首尔伟傲世有限公司 具有电流阻挡层的发光元件

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014202424A1 (de) * 2014-02-11 2015-08-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einer reflektierenden Schichtenfolge und Verfahren zum Erzeugen einer reflektierenden Schichtenfolge
TWI557952B (zh) 2014-06-12 2016-11-11 新世紀光電股份有限公司 發光元件
CN107689409B (zh) * 2016-08-03 2019-09-20 展晶科技(深圳)有限公司 发光二极管
TWI723207B (zh) 2016-08-18 2021-04-01 新世紀光電股份有限公司 微型發光二極體及其製造方法
CN108231974B (zh) 2016-12-21 2022-09-02 日亚化学工业株式会社 发光装置的制造方法
CN108336075B (zh) * 2017-01-20 2020-03-27 光宝光电(常州)有限公司 发光二极管封装结构、发光二极管封装模块及其成形方法
US10497845B2 (en) * 2017-03-27 2019-12-03 Seoul Semiconductor Co., Ltd. Display apparatus and method of manufacturing the same
US10749076B2 (en) * 2017-06-29 2020-08-18 Epistar Corporation Light-emitting device
TWI757187B (zh) * 2017-09-13 2022-03-01 晶元光電股份有限公司 半導體元件
CN107808921A (zh) * 2017-10-27 2018-03-16 扬州乾照光电有限公司 一种led显示模块、制造方法及其封装方法
CN108365061B (zh) * 2018-02-06 2020-01-14 映瑞光电科技(上海)有限公司 一种led芯片及其制造方法
TWI797259B (zh) * 2018-02-20 2023-04-01 晶元光電股份有限公司 一種發光單元及其發光裝置
TWI821302B (zh) * 2018-11-12 2023-11-11 晶元光電股份有限公司 半導體元件及其封裝結構
CN111200047A (zh) * 2018-11-20 2020-05-26 诺沛半导体有限公司 全让位发光二极管载板
US10635626B1 (en) * 2019-02-01 2020-04-28 I/O Interconnect, Ltd. Connecting method and docking station for connecting electronic device and computer
TWI771664B (zh) * 2019-03-21 2022-07-21 晶元光電股份有限公司 發光元件
CN110137126B (zh) * 2019-03-25 2022-01-11 苏州芯海半导体科技有限公司 一种半导体晶圆双膜切割方法
TWI740148B (zh) * 2019-05-24 2021-09-21 李宛儒 一種表面修飾化之發光晶片及其製備方法
US11075328B2 (en) * 2019-06-05 2021-07-27 Mikro Mesa Technology Co., Ltd. Method of forming conductive area at top surface of light-emitting diode
TWI818070B (zh) * 2019-08-30 2023-10-11 晶元光電股份有限公司 發光元件及其製造方法
CN215989229U (zh) * 2020-02-10 2022-03-08 东友精细化工有限公司 天线堆叠结构和包括天线堆叠结构的显示装置
CN112968105B (zh) * 2020-04-24 2021-12-21 重庆康佳光电技术研究院有限公司 一种Micro LED芯片巨量转移方法及一种显示背板
TWI724911B (zh) * 2020-05-26 2021-04-11 友達光電股份有限公司 發光裝置及其製造方法
US20230154902A1 (en) * 2020-07-16 2023-05-18 Enkris Semiconductor, Inc. Semiconductor structure and manufacturing method therefor
KR20220073541A (ko) * 2020-11-26 2022-06-03 엘지디스플레이 주식회사 백라이트 유닛 및 그를 포함하는 표시 장치
CN112928196B (zh) * 2021-01-29 2022-07-29 厦门天马微电子有限公司 一种显示面板及其制作方法、显示装置
CN113053328B (zh) * 2021-03-23 2022-07-29 高创(苏州)电子有限公司 发光器件及其驱动方法和发光基板及其驱动方法
CN113328017B (zh) * 2021-05-24 2022-06-21 厦门乾照光电股份有限公司 一种通孔式垂直结构led芯片及其制作方法
CN113363370A (zh) * 2021-06-02 2021-09-07 厦门乾照光电股份有限公司 一种垂直结构led芯片及其制作方法
CN113488495B (zh) * 2021-06-16 2022-09-09 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法
TWI820539B (zh) * 2021-12-16 2023-11-01 隆達電子股份有限公司 發光裝置及其形成方法

Family Cites Families (100)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3239061B2 (ja) * 1996-02-29 2001-12-17 シャープ株式会社 発光ダイオード及びその製造方法
DE69839300T2 (de) * 1997-12-15 2009-04-16 Philips Lumileds Lighting Company, LLC, San Jose Licht-emittierende Vorrichtung
TW543128B (en) * 2001-07-12 2003-07-21 Highlink Technology Corp Surface mounted and flip chip type LED package
TW518771B (en) * 2001-09-13 2003-01-21 United Epitaxy Co Ltd LED and the manufacturing method thereof
JP2004006498A (ja) * 2002-05-31 2004-01-08 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
CN1185721C (zh) * 2002-06-25 2005-01-19 光磊科技股份有限公司 发光二极管
US20040188696A1 (en) * 2003-03-28 2004-09-30 Gelcore, Llc LED power package
TWI220076B (en) * 2003-08-27 2004-08-01 Au Optronics Corp Light-emitting device
TWI281269B (en) * 2003-12-02 2007-05-11 Hon Hai Prec Ind Co Ltd Light emitting diode and backlight module
US7179670B2 (en) * 2004-03-05 2007-02-20 Gelcore, Llc Flip-chip light emitting diode device without sub-mount
JP2006066868A (ja) * 2004-03-23 2006-03-09 Toyoda Gosei Co Ltd 固体素子および固体素子デバイス
KR20070041411A (ko) * 2004-07-12 2007-04-18 로무 가부시키가이샤 반도체 발광 소자
JP2006100420A (ja) * 2004-09-28 2006-04-13 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
CN100369277C (zh) * 2004-12-28 2008-02-13 中华映管股份有限公司 发光二极管
US7045375B1 (en) * 2005-01-14 2006-05-16 Au Optronics Corporation White light emitting device and method of making same
JP4778745B2 (ja) * 2005-07-27 2011-09-21 パナソニック株式会社 半導体発光装置及びその製造方法
US20070131947A1 (en) * 2005-12-13 2007-06-14 Lg Innotek Co., Ltd Light-emitting device
JP2007165611A (ja) * 2005-12-14 2007-06-28 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子及びその製造方法
WO2007072967A1 (en) * 2005-12-19 2007-06-28 Showa Denko K.K. Flip-chip type semiconductor light-emitting device, method for manufacturing flip-chip type semiconductor light-emitting device, printed circuit board for flip-chip type semiconductor light-emitting device, mounting structure for flip-chip type semiconductor light-emitting device-and light-emitting diode lamp
TWI301331B (en) * 2006-05-17 2008-09-21 Epistar Corp Light emitting device
JP2008027722A (ja) * 2006-07-21 2008-02-07 Sony Corp 表示装置および表示装置の製造方法
US8158990B2 (en) * 2006-10-05 2012-04-17 Mitsubishi Chemical Corporation Light emitting device using GaN LED chip
US7889421B2 (en) * 2006-11-17 2011-02-15 Rensselaer Polytechnic Institute High-power white LEDs and manufacturing method thereof
TWI338383B (en) * 2006-12-18 2011-03-01 Delta Electronics Inc Electroluminescence device and manufacturing method thereof
TWI398015B (zh) * 2006-12-26 2013-06-01 發光二極體之製造方法
CN100438110C (zh) * 2006-12-29 2008-11-26 北京太时芯光科技有限公司 一种具有电流输运增透窗口层结构的发光二极管
US9196799B2 (en) * 2007-01-22 2015-11-24 Cree, Inc. LED chips having fluorescent substrates with microholes and methods for fabricating
JP2008192782A (ja) * 2007-02-05 2008-08-21 Toyota Central R&D Labs Inc 電極及びそれを有するｉｉｉ族窒化物系化合物半導体発光素子
JP4521013B2 (ja) * 2007-05-15 2010-08-11 株式会社日立製作所 照明装置および該照明装置を用いた液晶表示装置
US8368100B2 (en) * 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
KR20100077213A (ko) * 2007-11-19 2010-07-07 파나소닉 주식회사 반도체 발광장치 및 반도체 발광장치의 제조방법
US7906786B2 (en) * 2008-01-11 2011-03-15 Industrial Technology Research Institute Light emitting device
GB0801509D0 (en) * 2008-01-28 2008-03-05 Photonstar Led Ltd Light emitting system with optically transparent thermally conductive element
TWI416755B (zh) * 2008-05-30 2013-11-21 Epistar Corp 光源模組、其對應之光棒及其對應之液晶顯示裝置
CN101604715A (zh) * 2008-06-10 2009-12-16 普光科技（广州）有限公司 氮化镓基发光二极管芯片及其制作方法
TW201007898A (en) * 2008-08-06 2010-02-16 Harvatek Corp Wafer level LED package structure for increasing conductive area and heat-dissipating area
TWI419360B (zh) * 2008-08-11 2013-12-11 Formosa Epitaxy Inc Solid crystal light-emitting device having an insulating layer and a method for manufacturing the same
KR20100030472A (ko) * 2008-09-10 2010-03-18 삼성전자주식회사 발광 소자 및 발광 장치의 제조 방법, 상기 방법을 이용하여 제조한 발광 소자 및 발광 장치
US7982409B2 (en) * 2009-02-26 2011-07-19 Bridgelux, Inc. Light sources utilizing segmented LEDs to compensate for manufacturing variations in the light output of individual segmented LEDs
TWI422075B (zh) * 2009-03-13 2014-01-01 Advanced Optoelectronic Tech 覆晶式半導體光電元件之結構及其製造方法
JP2011077496A (ja) * 2009-04-28 2011-04-14 Shin Etsu Handotai Co Ltd 発光素子および発光素子の製造方法
US8211722B2 (en) * 2009-07-20 2012-07-03 Lu Lien-Shine Flip-chip GaN LED fabrication method
JP5392611B2 (ja) * 2009-09-14 2014-01-22 スタンレー電気株式会社 半導体発光装置および半導体発光装置の製造方法
TWI403003B (zh) * 2009-10-02 2013-07-21 Chi Mei Lighting Tech Corp 發光二極體及其製造方法
US8593825B2 (en) * 2009-10-14 2013-11-26 Wintec Industries, Inc. Apparatus and method for vertically-structured passive components
CN102074636B (zh) * 2009-11-19 2013-04-10 亿光电子工业股份有限公司 一种倒装芯片结构的发光二极管装置
JPWO2011071100A1 (ja) * 2009-12-11 2013-04-22 豊田合成株式会社 半導体発光素子、半導体発光素子を用いた発光装置および電子機器
KR101258586B1 (ko) * 2009-12-21 2013-05-02 엘지디스플레이 주식회사 발광다이오드 패키지 및 이의 제조방법
WO2011099384A1 (ja) * 2010-02-09 2011-08-18 日亜化学工業株式会社 発光装置および発光装置の製造方法
JP5494005B2 (ja) * 2010-02-26 2014-05-14 豊田合成株式会社 半導体発光素子
JP5381822B2 (ja) * 2010-03-10 2014-01-08 豊田合成株式会社 半導体発光素子及びその製造方法
KR101047739B1 (ko) * 2010-04-28 2011-07-07 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법, 발광소자 패키지 및 조명시스템
JP5414627B2 (ja) * 2010-06-07 2014-02-12 株式会社東芝 半導体発光装置及びその製造方法
CN102339922B (zh) * 2010-07-28 2015-01-07 展晶科技(深圳)有限公司 发光二极管及其制造方法
US20130168721A1 (en) * 2010-08-24 2013-07-04 Panasonic Corporation Light emitting device
US8664684B2 (en) * 2010-08-31 2014-03-04 Micron Technology, Inc. Solid state lighting devices with improved contacts and associated methods of manufacturing
CN102437254A (zh) * 2010-09-29 2012-05-02 展晶科技(深圳)有限公司 切割分离发光二极管晶片形成发光二极管芯片的方法
US9478719B2 (en) * 2010-11-08 2016-10-25 Bridgelux, Inc. LED-based light source utilizing asymmetric conductors
TWI435471B (zh) * 2010-11-16 2014-04-21 Epistar Corp 發光二極體晶粒及其製法
WO2012081568A1 (ja) * 2010-12-16 2012-06-21 シャープ株式会社 蛍光体基板、表示装置および照明装置
CN103283045B (zh) * 2010-12-28 2016-08-17 首尔伟傲世有限公司 高效发光二极管
KR20120091839A (ko) * 2011-02-10 2012-08-20 삼성전자주식회사 플립칩 발광소자 패키지 및 그 제조 방법
TW201238043A (en) * 2011-03-11 2012-09-16 Chi Mei Lighting Tech Corp Light-emitting diode device and method for manufacturing the same
KR20120106568A (ko) * 2011-03-18 2012-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치의 제작 방법
CN202049992U (zh) * 2011-04-06 2011-11-23 南通同方半导体有限公司 一种GaN基发光二极管结构
KR20120116257A (ko) * 2011-04-12 2012-10-22 한국광기술원 발광 다이오드의 휘도 향상 방법 및 그에 의한 발광 다이오드
EP2701214A4 (en) * 2011-04-20 2014-11-26 Elm Inc LIGHT-EMITTING DEVICE AND METHOD FOR THE PRODUCTION THEREOF
US9269878B2 (en) * 2011-05-27 2016-02-23 Lg Innotek Co., Ltd. Light emitting device and light emitting apparatus
US8574938B2 (en) * 2011-07-19 2013-11-05 Ncku Research And Development Foundation Using isolated epitaxial structures in glue bonding for multiple group-III nitride LEDS on a single substrate
JP5949294B2 (ja) * 2011-08-31 2016-07-06 日亜化学工業株式会社 半導体発光素子
TWI606618B (zh) * 2012-01-03 2017-11-21 Ｌｇ伊諾特股份有限公司 發光裝置
JP5639626B2 (ja) * 2012-01-13 2014-12-10 シャープ株式会社 半導体発光素子及び電極成膜方法
TW201336123A (zh) * 2012-02-17 2013-09-01 Walsin Lihwa Corp 高壓發光二極體晶片及其製造方法
TW201338200A (zh) * 2012-03-02 2013-09-16 Phostek Inc 發光二極體裝置
TWM434309U (en) * 2012-03-30 2012-07-21 N Tec Corp LED wafer thinning structure
TWI473298B (zh) * 2012-04-20 2015-02-11 Genesis Photonics Inc 半導體發光元件及覆晶式封裝元件
TWI472064B (zh) * 2012-06-06 2015-02-01 Achrolux Inc Ｌｅｄ封裝件及其製法
WO2014011419A1 (en) * 2012-07-10 2014-01-16 Toshiba Techno Center, Inc. Submount for led device package
CN102856459B (zh) * 2012-09-06 2015-09-16 安徽三安光电有限公司 发光二极管反射电极的钝化方法
CN102931314B (zh) * 2012-09-29 2015-02-11 安徽三安光电有限公司 一种防止金属迁移的半导体发光器件
CN102881797B (zh) * 2012-10-18 2015-02-25 安徽三安光电有限公司 具有电流扩展结构的氮化镓基发光二极管
JP2014112669A (ja) * 2012-11-12 2014-06-19 Citizen Holdings Co Ltd 半導体発光装置及びその製造方法
CN104854716B (zh) * 2012-12-10 2017-06-20 西铁城时计株式会社 Led装置及其制造方法
TWM453969U (zh) * 2012-12-26 2013-05-21 Genesis Photonics Inc 發光裝置
KR102091831B1 (ko) * 2013-01-08 2020-03-20 서울반도체 주식회사 발광 다이오드 및 그 제조방법
US9318674B2 (en) * 2013-02-05 2016-04-19 Cree, Inc. Submount-free light emitting diode (LED) components and methods of fabricating same
TWM460409U (zh) * 2013-02-22 2013-08-21 B S J Entpr Co Ltd 發光元件
KR102031967B1 (ko) * 2013-05-07 2019-10-14 엘지이노텍 주식회사 발광 소자 패키지
TW201444115A (zh) * 2013-05-10 2014-11-16 Chi Mei Lighting Tech Corp 發光裝置及其製造方法
CN104157769B (zh) * 2013-05-13 2017-04-05 新世纪光电股份有限公司 发光二极管封装结构
TWI527263B (zh) * 2013-07-17 2016-03-21 新世紀光電股份有限公司 發光二極體結構
TWI520383B (zh) * 2013-10-14 2016-02-01 新世紀光電股份有限公司 發光二極體封裝結構
US9419189B1 (en) * 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency
TWI542047B (zh) * 2014-01-13 2016-07-11 邱羅利士公司 發光二極體封裝結構之製法
JP2015173142A (ja) * 2014-03-11 2015-10-01 株式会社東芝 半導体発光装置
JP5919484B2 (ja) * 2014-05-13 2016-05-18 パナソニックＩｐマネジメント株式会社 窒化物半導体発光ダイオード
CN203910851U (zh) * 2014-05-23 2014-10-29 晶科电子（广州）有限公司 一种白光led芯片
CN104253194A (zh) * 2014-09-18 2014-12-31 易美芯光（北京）科技有限公司 一种芯片尺寸白光led的封装结构及方法
US20160181476A1 (en) * 2014-12-17 2016-06-23 Apple Inc. Micro led with dielectric side mirror
US20160190406A1 (en) * 2014-12-24 2016-06-30 Epistar Corporation Light-emitting device and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108281523A (zh) * 2017-01-06 2018-07-13 首尔伟傲世有限公司 具有电流阻挡层的发光元件

Also Published As

Publication number Publication date
CN105895790A (zh) 2016-08-24
TW201631795A (zh) 2016-09-01
TW201707244A (zh) 2017-02-16
TW201834271A (zh) 2018-09-16
TW201631791A (zh) 2016-09-01
TW201703293A (zh) 2017-01-16
TW201703295A (zh) 2017-01-16
US20160240751A1 (en) 2016-08-18
TW201943100A (zh) 2019-11-01
US20190214374A1 (en) 2019-07-11
TWI583019B (zh) 2017-05-11
TWI677112B (zh) 2019-11-11
US20180019232A1 (en) 2018-01-18
US20180182742A1 (en) 2018-06-28
TWI636589B (zh) 2018-09-21
CN105895792B (zh) 2020-03-10
CN105895774A (zh) 2016-08-24
US20160247982A1 (en) 2016-08-25
US20160240732A1 (en) 2016-08-18
CN110993766A (zh) 2020-04-10
CN105895652A (zh) 2016-08-24
TW201631806A (zh) 2016-09-01
TW201631794A (zh) 2016-09-01
TW201703279A (zh) 2017-01-16
CN105895792A (zh) 2016-08-24
CN111081840A (zh) 2020-04-28
US20160247788A1 (en) 2016-08-25
US20170323870A1 (en) 2017-11-09
CN105895762A (zh) 2016-08-24
CN111081839A (zh) 2020-04-28
TWI697139B (zh) 2020-06-21
TWI692127B (zh) 2020-04-21
CN105895774B (zh) 2020-01-14
TW201631802A (zh) 2016-09-01
TW201631799A (zh) 2016-09-01
US20160240741A1 (en) 2016-08-18
US20180190627A1 (en) 2018-07-05

Similar Documents

Publication Publication Date Title
CN105895763A (zh) 发光二极管芯片
US8110847B2 (en) Nitride-based semiconductor light emitting diode
TWI433357B (zh) 高亮度發光二極體結構
US7531841B2 (en) Nitride-based semiconductor light emitting device
KR100708934B1 (ko) 질화물계 반도체 발광소자
JP6326852B2 (ja) 半導体発光素子
KR101007140B1 (ko) 발광 소자
CN1953225A (zh) 基于氮化物的半导体发光二极管
JP2012231014A (ja) 半導体発光素子
CN105895764A (zh) 发光二极管芯片
US9231165B2 (en) Light-emitting diode chip
CN108346726B (zh) 发光二极管元件
JP2013021334A (ja) 窒化物発光素子
TW201205879A (en) Light emitting device
US20150179880A1 (en) Nitride semiconductor structure
US20150207035A1 (en) Light-Emitting Element Having a Tunneling Structure
KR101483230B1 (ko) 질화물 반도체 발광 소자
CN105140369B (zh) 发光二极管结构
KR100721142B1 (ko) 질화물계 반도체 발광소자
KR101255003B1 (ko) 발광 소자 및 그 제조 방법
KR101201597B1 (ko) 발광 소자 및 그 제조 방법
CN102832310B (zh) 发光二极管结构
TWI610464B (zh) 發光二極體結構
JP2012253388A (ja) 半導体発光素子
KR100769719B1 (ko) 질화물계 반도체 발광소자

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20160824

WD01 Invention patent application deemed withdrawn after publication