CN105895774A - 发光元件 - Google Patents

发光元件 Download PDF

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Publication number
CN105895774A
CN105895774A CN201610088344.1A CN201610088344A CN105895774A CN 105895774 A CN105895774 A CN 105895774A CN 201610088344 A CN201610088344 A CN 201610088344A CN 105895774 A CN105895774 A CN 105895774A
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layer
reflecting layer
light
emitting component
reflecting
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CN105895774B (zh
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黄逸儒
庄东霖
沈志铭
许圣宗
黄冠杰
黄靖恩
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Nichia Corp
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Genesis Photonics Inc
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Priority to CN201911295322.2A priority Critical patent/CN111081839A/zh
Priority to CN201911296398.7A priority patent/CN111081840A/zh
Priority to CN201911295478.0A priority patent/CN110993766A/zh
Publication of CN105895774A publication Critical patent/CN105895774A/zh
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Abstract

本发明提供一种发光元件，包括一磊晶结构、一黏着层、一第一反射层、一第二反射层、一阻挡层、一第一电极以及一第二电极；磊晶结构包括一基板、一第一半导体层、一发光层以及一第二半导体层；黏着层设置于磊晶结构的第二半导体层上；第一反射层设置于黏着层上；第二反射层设置于第一反射层上且延伸至黏着层上；自第二反射层朝磊晶结构的方向定义一投影方向；第二反射层在投影方向上的投影面积大于第一反射层在投影方向上的投影面积；阻挡层设置于第二反射层上且具有导电性；第一电极电性连接于第一半导体层；第二电极电性连接于第二半导体层。本发明可利用第二反射层有效增加整体的反射面积，进而提升发光元件的整体出光效率。

Description

发光元件
技术领域
本发明关于一种发光元件，尤指一种可有效增加反射面积的发光元件。
背景技术
请参阅图1，图1为现有技术的发光元件1的示意图。如图1所示，发光元件1包括一磊晶结构10、一欧姆接触层12、一反射层14、一阻挡层16以及二电极18，其中欧姆接触层12、反射层14、阻挡层16与电极18都设置于磊晶结构10上。反射层14用以将磊晶结构10的发光层100发出的光线反射，阻挡层16则用以吸收光线。一般而言，反射层14的材料为具有高反射率的银或银合金。由于银的化学性质较为活泼，在高温时不稳定，容易乱窜，因此，现有技术会将反射层14的面积限制在一定的范围内，以避免反射层14在后续制程中因温度提高而流窜至磊晶结构10，进而影响出光表现。相对地，反射层14的反射面积也受到限制，可反射的光线有限，使得发光元件1的整体出光效率无法有效提升。
发明内容
本发明提供一种可有效增加反射面积的发光元件，以解决上述问题。
根据一实施例，本发明的发光元件包括一磊晶结构、一黏着层、一第一反射层、一第二反射层、一阻挡层、一第一电极以及一第二电极。磊晶结构包括一基板、一第一半导体层、一发光层以及一第二半导体层。黏着层设置于磊晶结构的第二半导体层上。第一反射层设置于黏着层上。第二反射层设置于第一反射层上且延伸至黏着层上。自第二反射层朝磊晶结构的方向定义一投影方向。第二反射层在投影方向上的投影面积大于第一反射层在投影方向上的投影面积。阻挡层设置于第二反射层上且具有导电性。第一电极电性连接于第一半导体层。第二电极电性连接于第二半导体层。
在一实施例中，第一反射层的材料可为银或银合金，且第二反射层的材料可为非银金属、非银合金或由多层非银金属层所组成，其中第一反射层的反射率大于第二反射层的反射率，且第二反射层的反射率大于或等于80％。
另一实施例中，第一反射层的材料可为铝或铝合金，且第二反射层的材料可为非金属材料或绝缘性的多层材料层所组成，例如包括但不限于是布拉格反射层，其中第一反射层的反射率小于第二反射层的反射率，且第二反射层的反射率大于或等于80％。
综上所述，本发明在第一反射层上增设第二反射层，且使第二反射层延伸至黏着层上，使得第二反射层的投影面积大于第一反射层的投影面积。换言之，本发明可先将化学性质较为活泼的第一反射层(例如，银或银合金)设置在黏着层上的一定范围内，以避免第一反射层材料在后续制程中因温度提高而流窜至磊晶结构。接着，再将化学性质较不活泼的第二反射层(例如，非银金属或非银合金或绝缘性材料)设置于第一反射层上，且使第二反射层延伸至黏着层上。藉此，本发明即可利用第二反射层有效增加整体的反射面积，进而提升发光元件的整体出光效率。
关于本发明的优点与精神可以通过以下的发明详述及附图得到进一步的了解。
附图说明
图1为现有技术的发光元件的示意图；
图2为本发明第一实施例的发光元件的示意图；
图3为本发明第二实施例的发光元件的示意图；
图4为本发明第三实施例的发光元件的示意图；
图5为本发明第四实施例的发光元件的示意图。
附图标记说明：
1、3、5、7、9：发光元件；
10、30：磊晶结构；
12：欧姆接触层；
14：反射层；
16、38：阻挡层；
18：电极；
32：黏着层；
34：第一反射层；
36：第二反射层；
40：第一电极；
42：第二电极；
100、304：发光层；
300：基板；
302：第一半导体层；
306：第二半导体层；
320、360、380：侧表面；
D：投影方向；
A1、A2、A3、A4：投影面积。
具体实施方式
请参阅图2，图2为本发明第一实施例的发光元件3的示意图。如图2所示，发光元件3包括一磊晶结构30、一黏着层32、一第一反射层34、一第二反射层36、一阻挡层38、一第一电极40以及一第二电极42。磊晶结构30包括一基板300、一第一半导体层302、一发光层304以及一第二半导体层306，其中第一半导体层302位于基板300上，发光层304位于第一半导体层302上，且第二半导体层306位于发光层304上。基板300的材料可为蓝宝石，但不以此为限。第一电极40电性连接于第一半导体层302，且第二电极42电性连接于第二半导体层306。第一半导体层302可为N型半导体层(例如，N型氮化镓层)，且第二半导体层306可为P型半导体层(例如，P型氮化镓层)。此时，第一电极40即为N型电极，且第二电极42即为P型电极。
黏着层32设置于磊晶结构30的第二半导体层306上。在此实施例中，黏着层32可为金属薄膜或金属氧化物层，例如氧化铟锡(Indium tin oxide,简称ITO)，其中金属薄膜的厚度小于20nm。第一反射层34设置于黏着层32上。在此实施例中，第一反射层34的材料可为银或银合金。第二反射层36设置于第一反射层34上且延伸至黏着层32上。在此实施例中，第二反射层36的材料可为非银金属、非银合金或由多层金属层所组成，例如铝或铝合金。阻挡层38设置于第二反射层36上且具有导电性。在此实施例中，阻挡层38的材料可为铂、金、钨、钛或钛钨合金。此外，第二反射层36与阻挡层38可在同一道制程成型，使得第二反射层36的侧表面360与阻挡层38的侧表面380切齐。第二电极42设置于阻挡层38上，以通过阻挡层38、第二反射层36与黏着层32电性连接于磊晶结构30的第二半导体层306。
另一实施例中，第一反射层34的材料可为铝或铝合金。第二反射层36的材料可为非银金属、非银合金或由多层绝缘材料层所组成。其中阻挡层38设置于第二反射层36上且不具有导电性。阻挡层38的材料可与第二反射层36具相同材料且可在同一道制程成型。第二电极42设置于阻挡层38上，并以电性连接于磊晶结构30的第二半导体层306。
如图2所示，自第二反射层36朝磊晶结构30的方向定义一投影方向D。由于第二反射层36设置于第一反射层34上且延伸至黏着层32上，因此，第二反射层36在投影方向D上的投影面积A1大于第一反射层34在投影方向D上的投影面积A2且第一反射层34在投影方向D上的投影面积A2与发光层304在投影方向D上的投影面积A4的比值小于30％，其中一实施例中，第一反射层34在投影方向D上的投影面积A2与发光层304在投影方向D上的投影面积A4的比值小于10％。本发明可先将化学性质较为活泼的第一反射层34(例如，银或银合金)设置在黏着层32上的一定范围内，以避免第一反射层34在后续制程中因温度提高而流窜至磊晶结构30。接着，再将化学性质较不活泼的第二反射层36(例如，非银金属或非银合金)设置于第一反射层34上，且使第二反射层36延伸至黏着层32上。藉此，本发明即可利用第二反射层36有效增加整体的反射面积，进而提升发光元件3的整体出光效率。在此实施例中，第二反射层36的反射率大于阻挡层38的反射率，且第二反射层36的反射率大于或等于80％。
配合图2，请参阅图3，图3为本发明第二实施例的发光元件5的示意图。发光元件5与上述的发光元件3的主要不同之处在于，发光元件5的第二反射层36的侧表面360、阻挡层38的侧表面380与黏着层32的侧表面320切齐。换言之，第二反射层36在投影方向D上的投影面积A1可等于黏着层32在投影方向D上的投影面积A3且第一反射层34在投影方向D上的投影面积A2与发光层304在投影方向D上的投影面积A4的比值小于30％，其中一实施例中，第一反射层34在投影方向D上的投影面积A2与发光层304在投影方向D上的投影面积A4的比值小于10％，以进一步增加整体的反射面积。
配合图3，请参阅图4，图4为本发明第三实施例的发光元件7的示意图。发光元件7与上述的发光元件5的主要不同之处在于，发光元件7的第二反射层36进一步延伸至磊晶结构30的第二半导体层306上，使得第二反射层36在投影方向D上的投影面积A1大于黏着层32在投影方向D上的投影面积A3且第一反射层34在投影方向D上的投影面积A2与发光层304在投影方向D上的投影面积A4的比值小于30％，其中在一实施例中，第一反射层34在投影方向D上的投影面积A2与发光层304在投影方向D上的投影面积A4的比值小于10％。藉此，可再进一步增加整体的反射面积。
配合图4，请参阅图5，另一实施例中，图5为本发明第四实施例的发光元件9的示意图。第二反射层36的材料可为非银金属、非银合金，或由多层绝缘材料层所组成，例如包括但不限于是布拉格反射层。第一反射层34的材料可为铝或铝合金，其中阻挡层38设置于第二反射层36上且不具有导电性。阻挡层38的材料可与第二反射层36具相同材料且可在同一道制程成型。第二电极42设置于阻挡层38上，并以电性连接于磊晶结构30的第二半导体层306。发光元件9与上述的发光元件7的主要不同之处在于，发光元件9的第二反射层36进一步延伸至磊晶结构30的第一半导体层302上，使得第二反射层36在投影方向D上的投影面积A1大于发光层304在投影方向D上的投影面积A4且第一反射层34在投影方向D上的投影面积A2与发光层304在投影方向D上的投影面积A4的比值小于30％，其中在一实施例中，第一反射层34在投影方向D上的投影面积A2与发光层304在投影方向D上的投影面积A4的比值小于10％。藉此，可再进一步增加整体的反射面积。
综上所述，本发明在第一反射层上增设第二反射层，且使第二反射层延伸至黏着层上，使得第二反射层的投影面积大于第一反射层的投影面积。换言之，本发明可先将化学性质较为活泼的第一反射层(例如，银或银合金)设置在黏着层上的一定范围内，以避免第一反射层在后续制程中因温度提高而流窜至磊晶结构。接着，再将化学性质较不活泼的第二反射层(例如，非银金属或非银合金)设置于第一反射层上，且使第二反射层延伸至黏着层上。藉此，本发明即可利用第二反射层有效增加整体的反射面积，进而提升发光元件的整体出光效率。
最后应说明的是：以上各实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述各实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分或者全部技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。

Claims (10)

1.一种发光元件，其特征在于，包括：
一磊晶结构，包括一基板、一第一半导体层、一发光层以及一第二半导体层；
一黏着层，设置于所述磊晶结构的所述第二半导体层上；
一第一反射层，设置于所述黏着层上；
一第二反射层，设置于所述第一反射层上且延伸至所述黏着层上，自所述第二反射层朝所述磊晶结构的方向定义一投影方向，所述第二反射层在所述投影方向上的投影面积大于所述第一反射层在所述投影方向上的投影面积；
一阻挡层，设置于所述第二反射层上；
一第一电极，电性连接于所述第一半导体层；以及
一第二电极，电性连接于所述第二半导体层。
2.根据权利要求1所述的发光元件，其特征在于，所述第一反射层的材料为银或银合金，且所述第二反射层的材料为非银金属、非银合金或由多层金属层所组成。
3.根据权利要求1所述的发光元件，其特征在于，所述第一反射层的材料为铝或铝合金，且所述第二反射层的材料为非银金属、非银合金或由多层绝缘材料层所组成。
4.根据权利要求1所述的发光元件，其特征在于，所述第二反射层的反射率大于所述阻挡层的反射率。
5.根据权利要求1所述的发光元件，其特征在于，所述第二反射层的反射率大于或等于80％。
6.根据权利要求1所述的发光元件，其特征在于，所述阻挡层的材料为铂、金、钨、钛或钛钨合金。
7.根据权利要求1所述的发光元件，其特征在于，所述黏着层为金属薄膜或金属氧化物层。
8.根据权利要求1所述的发光元件，其特征在于，所述第二反射层的侧表面与所述阻挡层的侧表面切齐。
9.根据权利要求7所述的发光元件，其特征在于，所述第二反射层的侧表面、所述阻挡层的侧表面与所述黏着层的侧表面切齐。
10.根据权利要求1所述的发光元件，其特征在于，所述第二反射层在所述投影方向上的投影面积大于所述黏着层在所述投影方向上的投影面积。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113053328A (zh) * 2021-03-23 2021-06-29 高创(苏州)电子有限公司 发光器件及其驱动方法和发光基板及其驱动方法

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014202424A1 (de) * 2014-02-11 2015-08-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einer reflektierenden Schichtenfolge und Verfahren zum Erzeugen einer reflektierenden Schichtenfolge
TWI557952B (zh) 2014-06-12 2016-11-11 新世紀光電股份有限公司 發光元件
CN107689409B (zh) * 2016-08-03 2019-09-20 展晶科技(深圳)有限公司 发光二极管
CN107768495A (zh) 2016-08-18 2018-03-06 新世纪光电股份有限公司 微型发光二极管及其制造方法
CN108231974B (zh) 2016-12-21 2022-09-02 日亚化学工业株式会社 发光装置的制造方法
KR20180081371A (ko) * 2017-01-06 2018-07-16 서울바이오시스 주식회사 전류 차단층을 가지는 발광 소자
CN111293199A (zh) * 2017-01-20 2020-06-16 光宝光电(常州)有限公司 发光二极管封装结构、发光二极管封装模块
US10497845B2 (en) 2017-03-27 2019-12-03 Seoul Semiconductor Co., Ltd. Display apparatus and method of manufacturing the same
US10749076B2 (en) * 2017-06-29 2020-08-18 Epistar Corporation Light-emitting device
TWI757187B (zh) * 2017-09-13 2022-03-01 晶元光電股份有限公司 半導體元件
CN107808921A (zh) * 2017-10-27 2018-03-16 扬州乾照光电有限公司 一种led显示模块、制造方法及其封装方法
CN108365061B (zh) * 2018-02-06 2020-01-14 映瑞光电科技(上海)有限公司 一种led芯片及其制造方法
KR102453678B1 (ko) * 2018-02-20 2022-10-11 에피스타 코포레이션 발광소자 및 그의 제작방법
TWI821302B (zh) * 2018-11-12 2023-11-11 晶元光電股份有限公司 半導體元件及其封裝結構
CN111200047A (zh) * 2018-11-20 2020-05-26 诺沛半导体有限公司 全让位发光二极管载板
US10635626B1 (en) * 2019-02-01 2020-04-28 I/O Interconnect, Ltd. Connecting method and docking station for connecting electronic device and computer
CN213752741U (zh) * 2019-03-21 2021-07-20 晶元光电股份有限公司 发光元件及含该发光元件的封装结构和光电系统
CN110137126B (zh) * 2019-03-25 2022-01-11 苏州芯海半导体科技有限公司 一种半导体晶圆双膜切割方法
TWI740148B (zh) * 2019-05-24 2021-09-21 李宛儒 一種表面修飾化之發光晶片及其製備方法
US11075328B2 (en) * 2019-06-05 2021-07-27 Mikro Mesa Technology Co., Ltd. Method of forming conductive area at top surface of light-emitting diode
TWI818070B (zh) * 2019-08-30 2023-10-11 晶元光電股份有限公司 發光元件及其製造方法
CN113258274A (zh) * 2020-02-10 2021-08-13 东友精细化工有限公司 天线堆叠结构和包括天线堆叠结构的显示装置
CN112968105B (zh) * 2020-04-24 2021-12-21 重庆康佳光电技术研究院有限公司 一种Micro LED芯片巨量转移方法及一种显示背板
TWI724911B (zh) * 2020-05-26 2021-04-11 友達光電股份有限公司 發光裝置及其製造方法
US20230154902A1 (en) * 2020-07-16 2023-05-18 Enkris Semiconductor, Inc. Semiconductor structure and manufacturing method therefor
KR20220073541A (ko) * 2020-11-26 2022-06-03 엘지디스플레이 주식회사 백라이트 유닛 및 그를 포함하는 표시 장치
CN112928196B (zh) * 2021-01-29 2022-07-29 厦门天马微电子有限公司 一种显示面板及其制作方法、显示装置
CN113328017B (zh) * 2021-05-24 2022-06-21 厦门乾照光电股份有限公司 一种通孔式垂直结构led芯片及其制作方法
CN113363370A (zh) * 2021-06-02 2021-09-07 厦门乾照光电股份有限公司 一种垂直结构led芯片及其制作方法
CN113488495B (zh) * 2021-06-16 2022-09-09 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法
TWI820539B (zh) * 2021-12-16 2023-11-01 隆達電子股份有限公司 發光裝置及其形成方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050179051A1 (en) * 1997-12-15 2005-08-18 You Kondoh III-Nitride semiconductor light emitting device having a silver p-contact
TW200828612A (en) * 2006-12-18 2008-07-01 Delta Electronics Inc Electroluminescence device and manufacturing method thereof
US20080185609A1 (en) * 2007-02-05 2008-08-07 Kabushiki Kaisha Toyota Chuo Kenkyusho Electrode and group III nitride-based compound semiconductor light-emitting device having the electrode
US20100062554A1 (en) * 2008-09-10 2010-03-11 Samsung Electronics Co., Ltd. Light-emitting device, light-emitting element and method of manufacturing same
CN102931314A (zh) * 2012-09-29 2013-02-13 厦门市三安光电科技有限公司 一种防止金属迁移的半导体发光器件
US20130193464A1 (en) * 2012-01-03 2013-08-01 Seok Hun BAE Light emitting device, light emitting device package and light emitting module

Family Cites Families (94)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3239061B2 (ja) * 1996-02-29 2001-12-17 シャープ株式会社 発光ダイオード及びその製造方法
TW543128B (en) * 2001-07-12 2003-07-21 Highlink Technology Corp Surface mounted and flip chip type LED package
TW518771B (en) * 2001-09-13 2003-01-21 United Epitaxy Co Ltd LED and the manufacturing method thereof
JP2004006498A (ja) * 2002-05-31 2004-01-08 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
CN1185721C (zh) * 2002-06-25 2005-01-19 光磊科技股份有限公司 发光二极管
US20040188696A1 (en) * 2003-03-28 2004-09-30 Gelcore, Llc LED power package
TWI220076B (en) * 2003-08-27 2004-08-01 Au Optronics Corp Light-emitting device
TWI281269B (en) * 2003-12-02 2007-05-11 Hon Hai Prec Ind Co Ltd Light emitting diode and backlight module
US7179670B2 (en) * 2004-03-05 2007-02-20 Gelcore, Llc Flip-chip light emitting diode device without sub-mount
JP2006066868A (ja) * 2004-03-23 2006-03-09 Toyoda Gosei Co Ltd 固体素子および固体素子デバイス
JP4976849B2 (ja) * 2004-07-12 2012-07-18 ローム株式会社 半導体発光素子
JP2006100420A (ja) * 2004-09-28 2006-04-13 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
CN100369277C (zh) * 2004-12-28 2008-02-13 中华映管股份有限公司 发光二极管
US7045375B1 (en) * 2005-01-14 2006-05-16 Au Optronics Corporation White light emitting device and method of making same
JP4778745B2 (ja) * 2005-07-27 2011-09-21 パナソニック株式会社 半導体発光装置及びその製造方法
US20070131947A1 (en) * 2005-12-13 2007-06-14 Lg Innotek Co., Ltd Light-emitting device
JP2007165611A (ja) * 2005-12-14 2007-06-28 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子及びその製造方法
EP1966833A1 (en) * 2005-12-19 2008-09-10 Showa Denko K.K. Flip-chip type semiconductor light-emitting device, method for manufacturing flip-chip type semiconductor light-emitting device, printed circuit board for flip-chip type semiconductor light-emitting device, mounting structure for flip-chip type semiconductor light-emitting device-and light-emitting diode lamp
TWI301331B (en) * 2006-05-17 2008-09-21 Epistar Corp Light emitting device
JP2008027722A (ja) * 2006-07-21 2008-02-07 Sony Corp 表示装置および表示装置の製造方法
US8158990B2 (en) * 2006-10-05 2012-04-17 Mitsubishi Chemical Corporation Light emitting device using GaN LED chip
US7889421B2 (en) * 2006-11-17 2011-02-15 Rensselaer Polytechnic Institute High-power white LEDs and manufacturing method thereof
TWI398015B (zh) * 2006-12-26 2013-06-01 發光二極體之製造方法
CN100438110C (zh) * 2006-12-29 2008-11-26 北京太时芯光科技有限公司 一种具有电流输运增透窗口层结构的发光二极管
US9196799B2 (en) * 2007-01-22 2015-11-24 Cree, Inc. LED chips having fluorescent substrates with microholes and methods for fabricating
JP4521013B2 (ja) * 2007-05-15 2010-08-11 株式会社日立製作所 照明装置および該照明装置を用いた液晶表示装置
US8368100B2 (en) * 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
WO2009066430A1 (ja) * 2007-11-19 2009-05-28 Panasonic Corporation 半導体発光装置および半導体発光装置の製造方法
US7906786B2 (en) * 2008-01-11 2011-03-15 Industrial Technology Research Institute Light emitting device
GB0801509D0 (en) * 2008-01-28 2008-03-05 Photonstar Led Ltd Light emitting system with optically transparent thermally conductive element
TWI416755B (zh) * 2008-05-30 2013-11-21 Epistar Corp 光源模組、其對應之光棒及其對應之液晶顯示裝置
CN101604715A (zh) * 2008-06-10 2009-12-16 普光科技（广州）有限公司 氮化镓基发光二极管芯片及其制作方法
TW201007898A (en) * 2008-08-06 2010-02-16 Harvatek Corp Wafer level LED package structure for increasing conductive area and heat-dissipating area
TWI419360B (zh) * 2008-08-11 2013-12-11 Formosa Epitaxy Inc Solid crystal light-emitting device having an insulating layer and a method for manufacturing the same
US7982409B2 (en) * 2009-02-26 2011-07-19 Bridgelux, Inc. Light sources utilizing segmented LEDs to compensate for manufacturing variations in the light output of individual segmented LEDs
TWI422075B (zh) * 2009-03-13 2014-01-01 Advanced Optoelectronic Tech 覆晶式半導體光電元件之結構及其製造方法
JP2011077496A (ja) * 2009-04-28 2011-04-14 Shin Etsu Handotai Co Ltd 発光素子および発光素子の製造方法
US8211722B2 (en) * 2009-07-20 2012-07-03 Lu Lien-Shine Flip-chip GaN LED fabrication method
JP5392611B2 (ja) * 2009-09-14 2014-01-22 スタンレー電気株式会社 半導体発光装置および半導体発光装置の製造方法
TWI403003B (zh) * 2009-10-02 2013-07-21 Chi Mei Lighting Tech Corp 發光二極體及其製造方法
US8593825B2 (en) * 2009-10-14 2013-11-26 Wintec Industries, Inc. Apparatus and method for vertically-structured passive components
CN102074636B (zh) * 2009-11-19 2013-04-10 亿光电子工业股份有限公司 一种倒装芯片结构的发光二极管装置
JPWO2011071100A1 (ja) * 2009-12-11 2013-04-22 豊田合成株式会社 半導体発光素子、半導体発光素子を用いた発光装置および電子機器
KR101258586B1 (ko) * 2009-12-21 2013-05-02 엘지디스플레이 주식회사 발광다이오드 패키지 및 이의 제조방법
US9196805B2 (en) * 2010-02-09 2015-11-24 Nichia Corporation Light emitting device and method for manufacturing light emitting device
JP5494005B2 (ja) * 2010-02-26 2014-05-14 豊田合成株式会社 半導体発光素子
JP5381822B2 (ja) * 2010-03-10 2014-01-08 豊田合成株式会社 半導体発光素子及びその製造方法
KR101047739B1 (ko) * 2010-04-28 2011-07-07 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법, 발광소자 패키지 및 조명시스템
JP5414627B2 (ja) * 2010-06-07 2014-02-12 株式会社東芝 半導体発光装置及びその製造方法
CN102339922B (zh) * 2010-07-28 2015-01-07 展晶科技(深圳)有限公司 发光二极管及其制造方法
WO2012026068A1 (ja) * 2010-08-24 2012-03-01 パナソニック株式会社 発光素子
US8664684B2 (en) * 2010-08-31 2014-03-04 Micron Technology, Inc. Solid state lighting devices with improved contacts and associated methods of manufacturing
CN102437254A (zh) * 2010-09-29 2012-05-02 展晶科技(深圳)有限公司 切割分离发光二极管晶片形成发光二极管芯片的方法
US9478719B2 (en) * 2010-11-08 2016-10-25 Bridgelux, Inc. LED-based light source utilizing asymmetric conductors
TWI435471B (zh) * 2010-11-16 2014-04-21 Epistar Corp 發光二極體晶粒及其製法
WO2012081568A1 (ja) * 2010-12-16 2012-06-21 シャープ株式会社 蛍光体基板、表示装置および照明装置
WO2012091311A2 (en) * 2010-12-28 2012-07-05 Seoul Opto Device Co., Ltd. High efficiency light emitting diode
KR20120091839A (ko) * 2011-02-10 2012-08-20 삼성전자주식회사 플립칩 발광소자 패키지 및 그 제조 방법
TW201238043A (en) * 2011-03-11 2012-09-16 Chi Mei Lighting Tech Corp Light-emitting diode device and method for manufacturing the same
KR20120106568A (ko) * 2011-03-18 2012-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치의 제작 방법
CN202049992U (zh) * 2011-04-06 2011-11-23 南通同方半导体有限公司 一种GaN基发光二极管结构
KR20120116257A (ko) * 2011-04-12 2012-10-22 한국광기술원 발광 다이오드의 휘도 향상 방법 및 그에 의한 발광 다이오드
WO2012144030A1 (ja) * 2011-04-20 2012-10-26 株式会社エルム 発光装置及びその製造方法
US9269878B2 (en) * 2011-05-27 2016-02-23 Lg Innotek Co., Ltd. Light emitting device and light emitting apparatus
US8574938B2 (en) * 2011-07-19 2013-11-05 Ncku Research And Development Foundation Using isolated epitaxial structures in glue bonding for multiple group-III nitride LEDS on a single substrate
JP5949294B2 (ja) * 2011-08-31 2016-07-06 日亜化学工業株式会社 半導体発光素子
JP5639626B2 (ja) * 2012-01-13 2014-12-10 シャープ株式会社 半導体発光素子及び電極成膜方法
TW201336123A (zh) * 2012-02-17 2013-09-01 Walsin Lihwa Corp 高壓發光二極體晶片及其製造方法
TW201338200A (zh) * 2012-03-02 2013-09-16 Phostek Inc 發光二極體裝置
TWM434309U (en) * 2012-03-30 2012-07-21 N Tec Corp LED wafer thinning structure
TWI473298B (zh) * 2012-04-20 2015-02-11 Genesis Photonics Inc 半導體發光元件及覆晶式封裝元件
TWI472064B (zh) * 2012-06-06 2015-02-01 Achrolux Inc Ｌｅｄ封裝件及其製法
US9129834B2 (en) * 2012-07-10 2015-09-08 Kabushiki Kaisha Toshiba Submount for LED device package
CN102856459B (zh) * 2012-09-06 2015-09-16 安徽三安光电有限公司 发光二极管反射电极的钝化方法
CN102881797B (zh) * 2012-10-18 2015-02-25 安徽三安光电有限公司 具有电流扩展结构的氮化镓基发光二极管
JP2014112669A (ja) * 2012-11-12 2014-06-19 Citizen Holdings Co Ltd 半導体発光装置及びその製造方法
JP5611492B1 (ja) * 2012-12-10 2014-10-22 シチズンホールディングス株式会社 Ｌｅｄ装置及びその製造方法
TWM453969U (zh) * 2012-12-26 2013-05-21 Genesis Photonics Inc 發光裝置
KR102091831B1 (ko) * 2013-01-08 2020-03-20 서울반도체 주식회사 발광 다이오드 및 그 제조방법
US9318674B2 (en) * 2013-02-05 2016-04-19 Cree, Inc. Submount-free light emitting diode (LED) components and methods of fabricating same
TWM460409U (zh) * 2013-02-22 2013-08-21 B S J Entpr Co Ltd 發光元件
KR102031967B1 (ko) * 2013-05-07 2019-10-14 엘지이노텍 주식회사 발광 소자 패키지
TW201444115A (zh) * 2013-05-10 2014-11-16 Chi Mei Lighting Tech Corp 發光裝置及其製造方法
CN106252489A (zh) * 2013-05-13 2016-12-21 新世纪光电股份有限公司 发光二极管封装结构
TWI527263B (zh) * 2013-07-17 2016-03-21 新世紀光電股份有限公司 發光二極體結構
TWI520383B (zh) * 2013-10-14 2016-02-01 新世紀光電股份有限公司 發光二極體封裝結構
US9419189B1 (en) * 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency
TWI542047B (zh) * 2014-01-13 2016-07-11 邱羅利士公司 發光二極體封裝結構之製法
JP2015173142A (ja) * 2014-03-11 2015-10-01 株式会社東芝 半導体発光装置
JP5919484B2 (ja) * 2014-05-13 2016-05-18 パナソニックＩｐマネジメント株式会社 窒化物半導体発光ダイオード
CN203910851U (zh) * 2014-05-23 2014-10-29 晶科电子（广州）有限公司 一种白光led芯片
CN104253194A (zh) * 2014-09-18 2014-12-31 易美芯光（北京）科技有限公司 一种芯片尺寸白光led的封装结构及方法
US20160181476A1 (en) * 2014-12-17 2016-06-23 Apple Inc. Micro led with dielectric side mirror
US20160190406A1 (en) * 2014-12-24 2016-06-30 Epistar Corporation Light-emitting device and manufacturing method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050179051A1 (en) * 1997-12-15 2005-08-18 You Kondoh III-Nitride semiconductor light emitting device having a silver p-contact
TW200828612A (en) * 2006-12-18 2008-07-01 Delta Electronics Inc Electroluminescence device and manufacturing method thereof
US20080185609A1 (en) * 2007-02-05 2008-08-07 Kabushiki Kaisha Toyota Chuo Kenkyusho Electrode and group III nitride-based compound semiconductor light-emitting device having the electrode
US20100062554A1 (en) * 2008-09-10 2010-03-11 Samsung Electronics Co., Ltd. Light-emitting device, light-emitting element and method of manufacturing same
US20130193464A1 (en) * 2012-01-03 2013-08-01 Seok Hun BAE Light emitting device, light emitting device package and light emitting module
CN102931314A (zh) * 2012-09-29 2013-02-13 厦门市三安光电科技有限公司 一种防止金属迁移的半导体发光器件

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113053328A (zh) * 2021-03-23 2021-06-29 高创(苏州)电子有限公司 发光器件及其驱动方法和发光基板及其驱动方法

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