CN105895790A - 发光元件及其制作方法 - Google Patents

发光元件及其制作方法 Download PDF

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Publication number
CN105895790A
CN105895790A CN201610089097.7A CN201610089097A CN105895790A CN 105895790 A CN105895790 A CN 105895790A CN 201610089097 A CN201610089097 A CN 201610089097A CN 105895790 A CN105895790 A CN 105895790A
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light
emitting component
encapsulation material
catoptric arrangement
epitaxial layer
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丁绍滢
黄冠杰
黄靖恩
黄逸儒
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Genesis Photonics Inc
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Genesis Photonics Inc
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Abstract

本发明提供一种发光元件及其制作方法，包含一发光单元、一封装材、一透光层，及一反射结构。该发光单元具有至少一磊晶层及对应形成于该磊晶层上的二个电极，该磊晶层具有一顶面、一底面，及一连接该底面与该顶面的周面，该等电极外露于该底面。封装材形成于该磊晶层的顶面及周面。透光层配置于该封装材上，位于该磊晶层的顶面上方。反射结构围绕着该磊晶层周面设置，且形成于该封装材上。本发明还提供上述发光元件的制作方法。

Description

发光元件及其制作方法
技术领域
本发明涉及发光元件技术，尤其涉及一种发光元件及其制作方法。
背景技术
图1为现有发光二极管的封装结构示意图，参阅图1，现有的发光二极管的封装结构1，包含一封装杯11、一发光二极管晶粒12、二导线13，及一封装胶材14。
该封装杯11具有反射特性且包括一开口朝上的封装槽110，及一具有彼此间隔且用与外界电连接的一第一接脚111与一第二接脚112的导线架113。该发光二极管晶粒12固晶于该导线架113上且位于该封装槽110内，并包括二电极123。该等导线13是由例如金或铜等导电性良好的金属所构成，且用以将该发光二极管晶粒12的两个电极123分别电连接于该第一接脚111与该第二接脚112。该封装胶材14装填于该封装槽110中，以封闭该封装槽110的开口。
现有的发光二极管的封装结构1的封装杯11具有反光特性，用以反射发光二极管晶粒12发出的光线，然而，该发光二极管晶粒12与该封装杯11的内表面具有一定的间距，导致光反射的光程增加，造成光能量于反射过程的损耗，从而降低出光效率。另外，该封装杯11的开口形状，则会扩大光线的发散角。
发明内容
因此，本发明提供一种发光元件及其制作方法，从而减低发光元件正向出光的发散角及发光均匀度。
该发光元件，包含一发光单元、一封装材、一透光层，及一反射结构。
该发光单元具有至少一可以电致发光而产生光能的磊晶层，及对应形成于该磊晶层上的二个电极，该磊晶层具有一顶面、一底面，及一连接该底面与该顶面的周面，该两个电极外露于该底面。
该封装材形成于该磊晶层的顶面及周面。
该透光层配置于该封装材上，且位于该磊晶层的顶面上方。
该反射结构围绕着该磊晶层的周面设置，且形成于该封装材上。
此外，本发明还提供一种发光元件的制作方法，包含以下步骤：
设置至少一个发光元件于一基板，其中，该发光元件具有一磊晶结构与二电极。
形成一封装材于该基板上，且包覆该磊晶结构并暴露出该二电极。
形成一透光层于该封装材上。
形成一反射结构至少于该封装材的一表面上。
本发明的有益效果在于，通过直接于该封装材上设置环绕该磊晶层的周面的反射结构，令该磊晶层发出的光可直接通过该反射结构的反射对外发出，而有效减小该发光元件的光耗损及正向出光角度。
为让本发明的上述特征和优点能更明显易懂，下文特举实施例，并配合附图做详细说明如下。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作一简单地介绍，显而易见地，下面描述中的附图是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是现有发光二极管的封装结构示意图；
图2是本发明发光元件的第一实施例示意图；
图3A是本发明发光元件的第二实施例示意图；
图3B是本发明发光二极管的第三实施例示意图；
图4是本发明发光元件的第四实施例示意图；
图5是本发明发光元件的第五实施例示意图。
附图标记：
2：发光元件；
21：发光单元；
212：磊晶层；
213：电极；
214：顶面；
215：底面；
216：周面；
22：封装材；
23：透光层；
30：反射结构。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
在本发明被详细描述之前，应当注意在以下的说明内容中，类似的元件是以相同的编号来表示。
图2为本发明发光元件的第一实施例示意图，参阅图2，本发明发光元件的第一较佳实施例包含一发光单元21、一封装材22、一透光层23，及一反射结构30。
该发光单元21设置于一基板(图未示)的其中一表面，包括一可以电致发光而产生光能的磊晶层212及二个电极213，该磊晶层212具有一与该透光层23连接的顶面214、一相反的底面215，及一连接该底面215与该顶面214的周面216，该二个电极213设置于该底面215。
具体地说，该磊晶层212可视所需的发光波长而选用不同材料，于本实施例中，该磊晶层212为具有一n型半导体层、一形成于该n型半导体层部份表面的主发光层，及一形成于该主发光层表面的p型半导体层，其中，该p型半导体层及该n型半导体层于同向裸露的表面即为该底面215，该两个电极213为分别形成于该n型半导体层及p型半导体层裸露的表面。由于该磊晶层212结构与材料的选择为本技术领域所周知，且非本发明的重点，于此不多加赘述。
该封装材22形成于该磊晶层212的顶面214及周面216。
具体的说，该封装材22选自可透光的有机的高分子封装材料，如环氧树脂、聚硅烷氧或硅树脂，或是可透光的无机材料，例如是玻璃，可隔绝该磊晶层212与外界环境接触，以避免如湿气渗透或其他外在因素而影响该发光单元21的寿命。
该透光层23配置于该封装材22的一顶面上，且位于该发光单元21的磊晶层212的顶面214上方。选自可透光且不影响光学性质的材料所构成，例如玻璃、聚碳酸酯、亚克力、陶瓷、塑胶等。
该反射结构30对应围绕该磊晶层212的周面216，直接形成于该封装材22表面，并延伸至该透光层23的周缘，使该反射结构30与该磊晶层212周面216间具有该封装材22，用以反射自该发光单元21发出的光线。通过该反射结构30将自该磊晶层212周面216发出的光直接反射，因此，可让该磊晶层212产生的光仅可自该顶面214发出，而有效减低该发光单元21的光发散角。较佳地，该反射结构30的反射率不小于25％。
具体地说，该反射结构30的目的是用于反射该发光单元21自该周面216发出的光，因此，只要能反射该发光单元21发出的光即可，其构成材料并不须特别加以限制。但以制程及成本考量，较佳地，在让该反射结构30的反射率不小于25％的同时，该反射结构30可以是由包含粘结剂及多数分散于该粘结剂中的反射粒子所共同构成，通过该等反射粒子，使该发光单元21发出的光在碰到该反射结构30时，提高整体反射效果；或是选自具有良好反射的银、铝、铂，及金等金属或合金金属所构成。其中，该粘结剂选自高分子树脂、亚克力树脂、硅胶，或是由一般光硬化或热硬化组成材料硬化后而得，该反射粒子选自二氧化钛、二氧化锆、硫酸钡，及五氧化二钽等金属氧化物；抑或是由不同反射率膜层相互堆叠而成的布拉格反射镜。于本实施例中该反射结构30延伸至该透光层23的周缘，而能进一步的改善该透光层23侧边漏光的情况，当然，该反射结构30也可视实际需求，仅对应形成于该磊晶层212的周面216，而不延伸至该透光层23的周缘。
值得一提的是，该封装材22还可进一步包含荧光粉，是通过将荧光粉添加在前述的有机材料中或是让荧光粉与玻璃粉一同烧结成玻璃荧光体而形成封装材22，可让该发光单元21所发出的光再激发荧光粉而发出其它预定波长的光，以供后续不同的运用。由于本发明该封装材22是全面盖覆于该磊晶层212的顶面214及周面216，因此，当该封装材22还包含荧光粉时，该发光单元21无论是自该周面216还是顶面214所发出的光，均能通过该封装材22的荧光粉改变光色，且通过该反射结构30对光的多次反射，还可更进一步提升对该荧光粉的激发效率，因此能使该发光单元21对外发出的光形更为集中，且光色更为均匀。
图3A是本发明发光元件的第二实施例示意图，参阅图3A，本发明发光元件的第二实施例与该第一实施例的结构大致相同，其不同之处在于，该反射结构30还进一步形成于该封装材22的一底面上。也就是说，该反射结构30是往下延伸地包覆整个封装材22，以使该发光单元21的磊晶层212朝向该封装材22的底面发出的光也能通过该反射结构30的反射，而朝向该透光层23对外出光。
图3B是本发明发光二极管的第三实施例示意图，参阅图3B，本发明发光元件的第三实施例与该第一实施例的结构大致相同，其不同之处在于，该封装材22是形成于该磊晶层212的顶面，该反射结构30是直接紧贴该磊晶层212及该封装材22的侧面，使该磊晶层212发出的光减少行进于该封装材22中，可直接通过该反射结构30反射，而朝向该透光层23对外出光。
图4是本发明发光元件的第四实施例示意图，图5是本发明发光元件的第五实施例示意图，参阅图4与图5，图4与图5分别显示本发明发光元件的第四实施例与第五实施例，其结构分别与该第一实施例及该第二实施例大致相同，不同之处仅在于该发光单元21具有多个间隔设置的磊晶层212，图4与图5是以该发光单元21具有三个间隔设置的磊晶层212为例。当该发光单元21具有多个间隔设置的磊晶层212时，该反射结构30则是围绕该等磊晶层212形成于该封装材22表面，并延伸至该透光层23周缘，或再进一步延伸至该封装材22的底部，而形成于发光元件整体的最外围。
具体地说，前述该等实施例所述的发光元件是由下列步骤制备而得。
首先进行一准备步骤，准备一基板(图未示)，将多个发光元件2成一间隙间隔设置于该基板上。其中，该每一个发光元件2即是由该发光单元21、该封装材22，及该透光层23所构成。
详细地说，前述该每一个发光元件2的发光单元21可以是仅具有一个磊晶层212(如图2、图3A、图3B)，或是可以由多个磊晶层212成一组共同构成，图4与图5是以该发光单元21为由三个磊晶层212成一组为例做说明。如图4、5所示，当该发光单元21由三个磊晶层212成一组构成时，该等磊晶层212会彼此间隔设置，该封装材22是填置于该等磊晶层212的顶面214与周面216，该透光层23则为与该封装材22连接并位于该等磊晶层212的顶面214上方。
而于设置前述该等发光元件2时，则以该等电极213朝向该基板与该基板连接。由于设置该等发光元件2于该基板上的技术为本领域所周知，于此不多加赘述。
接着，进行一反射结构形成步骤，于对应该发光元件2的周面216的封装材22上直接形成该反射结构30，使该反射结构30与该发光元件2的磊晶层212的周面216间具有该封装材22。
具体地说，该反射结构形成步骤可利用于该等发光元件2的间隙填置一具有反射性的胶状树脂组成，之后将该胶状树脂组成固化，而得到该反射结构30；也可以通过物理气相沉积的蒸镀或溅镀等方式直接于该间隙间沉积金属或合金金属而构成该反射结构30。其中，该胶状树脂组成即是由粘结剂及多数分散于该粘结剂中的反射粒子所共同构成，其中，该粘结剂为光可硬化或热可硬化的材料或是室温下为固体的高分子树脂或硅胶，该反射粒子选自二氧化钛、二氧化锆、硫酸钡及五氧化二钽等金属氧化物，且该反射结构30的形成态样可视需求仅形成如图4所示，形成于该封装材22的侧面而露出该封装材22的底面215，或如图5所示，包覆整个封装材22。
最后，进行一切割步骤，利用激光切割、刀轮、钻石刀、钨钢刀、陶瓷刀、橡胶刀，或树脂刀等方式沿该间隙进行切割，即可得到如图2～图5所示，具有该反射结构30的发光元件。
综上所述，本发明发光元件及其制作方法，主要是通过将该透光层23设置于该磊晶层212的顶面214上方，并搭配围绕该磊晶层212的周面216而直接设置于该封装材22上的反射结构30，因此，可有效缩小发光单元21对外出光的发散角并增加出光的光均匀性，此外，因为该反射结构30为直接设置于该封装材22上，因此，可有效减少反射光的光程，降低光于反射过程的耗损，以增加出光效率，故确实能达成本发明的目的。
最后应说明的是：以上各实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述各实施例对本发明进行了详细的说明，本领域的普通技术人离本发明各实施例技术方案的范围。

Claims (15)

1.一种发光元件，其特征在于，包括：
一发光单元，具有至少一磊晶层及对应形成于所述磊晶层上的两个电极，所述磊晶层具有一顶面、一底面，及一连接所述底面与所述顶面的周面，所述两个电极外露于所述底面；
一封装材，至少形成于所述磊晶层的顶面；
一透光层，配置于所述封装材上，且位于所述磊晶层的顶面上方；及
一反射结构，围绕着所述磊晶层的周面设置，且形成于所述封装材上。
2.根据权利要求1所述的发光元件，其特征在于，所述封装材还形成于所述磊晶层的周面及，所述反射结构形成于所述封装材的表面，圈围所述磊晶层并延伸至所述透光层的周缘。
3.根据权利要求2所述的发光元件，其特征在于，所述封装材具有一顶面与一底面，所述透光层形成于所述封装材的顶面上，所述反射结构还进一步形成于所述封装材的底面上。
4.根据权利要求1所述的发光元件，其特征在于，所述反射结构的构成材料包括粘结剂及分散于所述粘结剂中的反射粒子。
5.根据权利要求4所述的发光元件，其特征在于，所述反射粒子选自下列群组其中任一：二氧化钛、二氧化锆、硫酸钡，及五氧化二钽。
6.根据权利要求4所述的发光元件，其特征在于，所述粘结剂选自高分子树脂、亚克力树脂或硅胶。
7.根据权利要求1所述的发光元件，其特征在于，所述反射结构的构成材料选自下列群组其中任一：银、铝、铂、金或其合金金属。
8.根据权利要求1所述的发光元件，其特征在于，所述反射结构为布拉格反射镜。
9.根据权利要求1所述的发光元件，其特征在于，所述封装材含有荧光粉。
10.一种发光元件的制作方法，其特征在于，包括：
设置至少一个发光元件于一基板，其中，所述发光元件具有一磊晶结构与二电极；
形成一封装材于所述基板上，且包覆所述磊晶结构并暴露出所述二电极；
形成一透光层于所述封装材上；及
形成一反射结构至少于所述封装材的一表面上。
11.根据权利要求10所述的发光元件的制作方法，其特征在于，所述封装材含有荧光粉。
12.根据权利要求10所述的发光元件的制作方法，其特征在于，所述设置至少一个发光元件于该基板的步骤是于所述基板上设置多个呈一间隙分布发光元件，形成所述反射结构的步骤是于所述间隙中填置一具有反射性的流体树脂组成，并将所述流体树脂组成固化，而得到所述反射结构。
13.根据权利要求12所述的发光元件的制作方法，其特征在于，所述胶状树脂组成包括粘结剂及多数分散于该粘结剂中的反射粒子。
14.根据权利要求10所述的发光元件的制作方法，其特征在于，形成所述反射结构的步骤是以蒸镀或溅镀方式形成所述反射结构。
15.根据权利要求12所述的发光元件的制作方法，其特征在于，还包含一沿该间隙切割，得到具有该反射结构的发光元件的步骤。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107689409A (zh) * 2016-08-03 2018-02-13 展晶科技(深圳)有限公司 发光二极管
CN111293199A (zh) * 2017-01-20 2020-06-16 光宝光电(常州)有限公司 发光二极管封装结构、发光二极管封装模块

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014202424A1 (de) * 2014-02-11 2015-08-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einer reflektierenden Schichtenfolge und Verfahren zum Erzeugen einer reflektierenden Schichtenfolge
TWI557952B (zh) 2014-06-12 2016-11-11 新世紀光電股份有限公司 發光元件
US10134950B2 (en) 2016-08-18 2018-11-20 Genesis Photonics Inc. Micro light emitting diode and manufacturing method thereof
CN108231974B (zh) 2016-12-21 2022-09-02 日亚化学工业株式会社 发光装置的制造方法
KR20180081371A (ko) * 2017-01-06 2018-07-16 서울바이오시스 주식회사 전류 차단층을 가지는 발광 소자
US10497845B2 (en) * 2017-03-27 2019-12-03 Seoul Semiconductor Co., Ltd. Display apparatus and method of manufacturing the same
US10749076B2 (en) * 2017-06-29 2020-08-18 Epistar Corporation Light-emitting device
TWI757187B (zh) * 2017-09-13 2022-03-01 晶元光電股份有限公司 半導體元件
CN107808921A (zh) * 2017-10-27 2018-03-16 扬州乾照光电有限公司 一种led显示模块、制造方法及其封装方法
CN108365061B (zh) * 2018-02-06 2020-01-14 映瑞光电科技(上海)有限公司 一种led芯片及其制造方法
TWI774927B (zh) * 2018-02-20 2022-08-21 晶元光電股份有限公司 發光元件及其製作方法
TWI821302B (zh) * 2018-11-12 2023-11-11 晶元光電股份有限公司 半導體元件及其封裝結構
CN111200047A (zh) * 2018-11-20 2020-05-26 诺沛半导体有限公司 全让位发光二极管载板
US10635626B1 (en) * 2019-02-01 2020-04-28 I/O Interconnect, Ltd. Connecting method and docking station for connecting electronic device and computer
TWI771664B (zh) * 2019-03-21 2022-07-21 晶元光電股份有限公司 發光元件
CN110137126B (zh) * 2019-03-25 2022-01-11 苏州芯海半导体科技有限公司 一种半导体晶圆双膜切割方法
TWI740148B (zh) * 2019-05-24 2021-09-21 李宛儒 一種表面修飾化之發光晶片及其製備方法
US11075328B2 (en) * 2019-06-05 2021-07-27 Mikro Mesa Technology Co., Ltd. Method of forming conductive area at top surface of light-emitting diode
TWI818070B (zh) * 2019-08-30 2023-10-11 晶元光電股份有限公司 發光元件及其製造方法
CN113258274A (zh) * 2020-02-10 2021-08-13 东友精细化工有限公司 天线堆叠结构和包括天线堆叠结构的显示装置
CN112968105B (zh) * 2020-04-24 2021-12-21 重庆康佳光电技术研究院有限公司 一种Micro LED芯片巨量转移方法及一种显示背板
TWI724911B (zh) * 2020-05-26 2021-04-11 友達光電股份有限公司 發光裝置及其製造方法
US20230154902A1 (en) * 2020-07-16 2023-05-18 Enkris Semiconductor, Inc. Semiconductor structure and manufacturing method therefor
KR20220073541A (ko) * 2020-11-26 2022-06-03 엘지디스플레이 주식회사 백라이트 유닛 및 그를 포함하는 표시 장치
CN112928196B (zh) * 2021-01-29 2022-07-29 厦门天马微电子有限公司 一种显示面板及其制作方法、显示装置
CN113053328B (zh) * 2021-03-23 2022-07-29 高创(苏州)电子有限公司 发光器件及其驱动方法和发光基板及其驱动方法
CN113328017B (zh) * 2021-05-24 2022-06-21 厦门乾照光电股份有限公司 一种通孔式垂直结构led芯片及其制作方法
CN113363370A (zh) * 2021-06-02 2021-09-07 厦门乾照光电股份有限公司 一种垂直结构led芯片及其制作方法
CN113488495B (zh) * 2021-06-16 2022-09-09 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法
TWI820539B (zh) * 2021-12-16 2023-11-01 隆達電子股份有限公司 發光裝置及其形成方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101855735A (zh) * 2007-11-19 2010-10-06 松下电器产业株式会社 半导体发光装置及半导体发光装置的制造方法
CN103534822A (zh) * 2011-04-20 2014-01-22 株式会社Elm 发光装置及其制造方法
CN203774363U (zh) * 2012-11-12 2014-08-13 西铁城控股株式会社 半导体发光装置

Family Cites Families (97)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3239061B2 (ja) * 1996-02-29 2001-12-17 シャープ株式会社 発光ダイオード及びその製造方法
EP1928034A3 (en) * 1997-12-15 2008-06-18 Philips Lumileds Lighting Company LLC Light emitting device
TW543128B (en) * 2001-07-12 2003-07-21 Highlink Technology Corp Surface mounted and flip chip type LED package
TW518771B (en) * 2001-09-13 2003-01-21 United Epitaxy Co Ltd LED and the manufacturing method thereof
JP2004006498A (ja) * 2002-05-31 2004-01-08 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
CN1185721C (zh) * 2002-06-25 2005-01-19 光磊科技股份有限公司 发光二极管
US20040188696A1 (en) * 2003-03-28 2004-09-30 Gelcore, Llc LED power package
TWI220076B (en) * 2003-08-27 2004-08-01 Au Optronics Corp Light-emitting device
TWI281269B (en) * 2003-12-02 2007-05-11 Hon Hai Prec Ind Co Ltd Light emitting diode and backlight module
US7179670B2 (en) * 2004-03-05 2007-02-20 Gelcore, Llc Flip-chip light emitting diode device without sub-mount
JP2006066868A (ja) * 2004-03-23 2006-03-09 Toyoda Gosei Co Ltd 固体素子および固体素子デバイス
JP4976849B2 (ja) * 2004-07-12 2012-07-18 ローム株式会社 半導体発光素子
JP2006100420A (ja) * 2004-09-28 2006-04-13 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
CN100369277C (zh) * 2004-12-28 2008-02-13 中华映管股份有限公司 发光二极管
US7045375B1 (en) * 2005-01-14 2006-05-16 Au Optronics Corporation White light emitting device and method of making same
JP4778745B2 (ja) * 2005-07-27 2011-09-21 パナソニック株式会社 半導体発光装置及びその製造方法
US20070131947A1 (en) * 2005-12-13 2007-06-14 Lg Innotek Co., Ltd Light-emitting device
JP2007165611A (ja) * 2005-12-14 2007-06-28 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子及びその製造方法
WO2007072967A1 (en) * 2005-12-19 2007-06-28 Showa Denko K.K. Flip-chip type semiconductor light-emitting device, method for manufacturing flip-chip type semiconductor light-emitting device, printed circuit board for flip-chip type semiconductor light-emitting device, mounting structure for flip-chip type semiconductor light-emitting device-and light-emitting diode lamp
TWI301331B (en) * 2006-05-17 2008-09-21 Epistar Corp Light emitting device
JP2008027722A (ja) * 2006-07-21 2008-02-07 Sony Corp 表示装置および表示装置の製造方法
CN101606246B (zh) * 2006-10-05 2012-07-04 三菱化学株式会社 使用GaN LED芯片的发光器件
US7889421B2 (en) * 2006-11-17 2011-02-15 Rensselaer Polytechnic Institute High-power white LEDs and manufacturing method thereof
TWI338383B (en) * 2006-12-18 2011-03-01 Delta Electronics Inc Electroluminescence device and manufacturing method thereof
TWI398015B (zh) * 2006-12-26 2013-06-01 發光二極體之製造方法
CN100438110C (zh) * 2006-12-29 2008-11-26 北京太时芯光科技有限公司 一种具有电流输运增透窗口层结构的发光二极管
US9196799B2 (en) * 2007-01-22 2015-11-24 Cree, Inc. LED chips having fluorescent substrates with microholes and methods for fabricating
JP2008192782A (ja) * 2007-02-05 2008-08-21 Toyota Central R&D Labs Inc 電極及びそれを有するｉｉｉ族窒化物系化合物半導体発光素子
JP4521013B2 (ja) * 2007-05-15 2010-08-11 株式会社日立製作所 照明装置および該照明装置を用いた液晶表示装置
US8368100B2 (en) * 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
US7906786B2 (en) * 2008-01-11 2011-03-15 Industrial Technology Research Institute Light emitting device
GB0801509D0 (en) * 2008-01-28 2008-03-05 Photonstar Led Ltd Light emitting system with optically transparent thermally conductive element
TWI416755B (zh) * 2008-05-30 2013-11-21 Epistar Corp 光源模組、其對應之光棒及其對應之液晶顯示裝置
CN101604715A (zh) * 2008-06-10 2009-12-16 普光科技（广州）有限公司 氮化镓基发光二极管芯片及其制作方法
TW201007898A (en) * 2008-08-06 2010-02-16 Harvatek Corp Wafer level LED package structure for increasing conductive area and heat-dissipating area
TWI419360B (zh) * 2008-08-11 2013-12-11 Formosa Epitaxy Inc Solid crystal light-emitting device having an insulating layer and a method for manufacturing the same
KR20100030472A (ko) * 2008-09-10 2010-03-18 삼성전자주식회사 발광 소자 및 발광 장치의 제조 방법, 상기 방법을 이용하여 제조한 발광 소자 및 발광 장치
US7982409B2 (en) * 2009-02-26 2011-07-19 Bridgelux, Inc. Light sources utilizing segmented LEDs to compensate for manufacturing variations in the light output of individual segmented LEDs
TWI422075B (zh) * 2009-03-13 2014-01-01 Advanced Optoelectronic Tech 覆晶式半導體光電元件之結構及其製造方法
JP2011077496A (ja) * 2009-04-28 2011-04-14 Shin Etsu Handotai Co Ltd 発光素子および発光素子の製造方法
US8211722B2 (en) * 2009-07-20 2012-07-03 Lu Lien-Shine Flip-chip GaN LED fabrication method
JP5392611B2 (ja) * 2009-09-14 2014-01-22 スタンレー電気株式会社 半導体発光装置および半導体発光装置の製造方法
TWI403003B (zh) * 2009-10-02 2013-07-21 Chi Mei Lighting Tech Corp 發光二極體及其製造方法
US8593825B2 (en) * 2009-10-14 2013-11-26 Wintec Industries, Inc. Apparatus and method for vertically-structured passive components
CN102074636B (zh) * 2009-11-19 2013-04-10 亿光电子工业股份有限公司 一种倒装芯片结构的发光二极管装置
US8637888B2 (en) * 2009-12-11 2014-01-28 Toyoda Gosei Co., Ltd. Semiconductor light emitting element, light emitting device using semiconductor light emitting element, and electronic apparatus
KR101258586B1 (ko) * 2009-12-21 2013-05-02 엘지디스플레이 주식회사 발광다이오드 패키지 및 이의 제조방법
KR20170091167A (ko) * 2010-02-09 2017-08-08 니치아 카가쿠 고교 가부시키가이샤 발광 장치
JP5494005B2 (ja) * 2010-02-26 2014-05-14 豊田合成株式会社 半導体発光素子
JP5381822B2 (ja) * 2010-03-10 2014-01-08 豊田合成株式会社 半導体発光素子及びその製造方法
KR101047739B1 (ko) * 2010-04-28 2011-07-07 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법, 발광소자 패키지 및 조명시스템
JP5414627B2 (ja) * 2010-06-07 2014-02-12 株式会社東芝 半導体発光装置及びその製造方法
CN102339922B (zh) * 2010-07-28 2015-01-07 展晶科技(深圳)有限公司 发光二极管及其制造方法
WO2012026068A1 (ja) * 2010-08-24 2012-03-01 パナソニック株式会社 発光素子
US8664684B2 (en) * 2010-08-31 2014-03-04 Micron Technology, Inc. Solid state lighting devices with improved contacts and associated methods of manufacturing
CN102437254A (zh) * 2010-09-29 2012-05-02 展晶科技(深圳)有限公司 切割分离发光二极管晶片形成发光二极管芯片的方法
US9478719B2 (en) * 2010-11-08 2016-10-25 Bridgelux, Inc. LED-based light source utilizing asymmetric conductors
TWI435471B (zh) * 2010-11-16 2014-04-21 Epistar Corp 發光二極體晶粒及其製法
WO2012081568A1 (ja) * 2010-12-16 2012-06-21 シャープ株式会社 蛍光体基板、表示装置および照明装置
US9136432B2 (en) * 2010-12-28 2015-09-15 Seoul Viosys Co., Ltd. High efficiency light emitting diode
KR20120091839A (ko) * 2011-02-10 2012-08-20 삼성전자주식회사 플립칩 발광소자 패키지 및 그 제조 방법
TW201238043A (en) * 2011-03-11 2012-09-16 Chi Mei Lighting Tech Corp Light-emitting diode device and method for manufacturing the same
KR20120106568A (ko) * 2011-03-18 2012-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치의 제작 방법
CN202049992U (zh) * 2011-04-06 2011-11-23 南通同方半导体有限公司 一种GaN基发光二极管结构
KR20120116257A (ko) * 2011-04-12 2012-10-22 한국광기술원 발광 다이오드의 휘도 향상 방법 및 그에 의한 발광 다이오드
US9269878B2 (en) * 2011-05-27 2016-02-23 Lg Innotek Co., Ltd. Light emitting device and light emitting apparatus
US8574938B2 (en) * 2011-07-19 2013-11-05 Ncku Research And Development Foundation Using isolated epitaxial structures in glue bonding for multiple group-III nitride LEDS on a single substrate
JP5949294B2 (ja) * 2011-08-31 2016-07-06 日亜化学工業株式会社 半導体発光素子
TWI606618B (zh) * 2012-01-03 2017-11-21 Ｌｇ伊諾特股份有限公司 發光裝置
JP5639626B2 (ja) * 2012-01-13 2014-12-10 シャープ株式会社 半導体発光素子及び電極成膜方法
TW201336123A (zh) * 2012-02-17 2013-09-01 Walsin Lihwa Corp 高壓發光二極體晶片及其製造方法
TW201338200A (zh) * 2012-03-02 2013-09-16 Phostek Inc 發光二極體裝置
TWM434309U (en) * 2012-03-30 2012-07-21 N Tec Corp LED wafer thinning structure
TWI473298B (zh) * 2012-04-20 2015-02-11 Genesis Photonics Inc 半導體發光元件及覆晶式封裝元件
TWI472064B (zh) * 2012-06-06 2015-02-01 Achrolux Inc Ｌｅｄ封裝件及其製法
US9129834B2 (en) * 2012-07-10 2015-09-08 Kabushiki Kaisha Toshiba Submount for LED device package
CN102856459B (zh) * 2012-09-06 2015-09-16 安徽三安光电有限公司 发光二极管反射电极的钝化方法
CN102931314B (zh) * 2012-09-29 2015-02-11 安徽三安光电有限公司 一种防止金属迁移的半导体发光器件
CN102881797B (zh) * 2012-10-18 2015-02-25 安徽三安光电有限公司 具有电流扩展结构的氮化镓基发光二极管
US9490398B2 (en) * 2012-12-10 2016-11-08 Citizen Holdings Co., Ltd. Manufacturing method of light emitting device in a flip-chip configuration with reduced package size
TWM453969U (zh) * 2012-12-26 2013-05-21 Genesis Photonics Inc 發光裝置
KR102091831B1 (ko) * 2013-01-08 2020-03-20 서울반도체 주식회사 발광 다이오드 및 그 제조방법
US9318674B2 (en) * 2013-02-05 2016-04-19 Cree, Inc. Submount-free light emitting diode (LED) components and methods of fabricating same
TWM460409U (zh) * 2013-02-22 2013-08-21 B S J Entpr Co Ltd 發光元件
KR102031967B1 (ko) * 2013-05-07 2019-10-14 엘지이노텍 주식회사 발광 소자 패키지
TW201444115A (zh) * 2013-05-10 2014-11-16 Chi Mei Lighting Tech Corp 發光裝置及其製造方法
CN104157769B (zh) * 2013-05-13 2017-04-05 新世纪光电股份有限公司 发光二极管封装结构
TWI527263B (zh) * 2013-07-17 2016-03-21 新世紀光電股份有限公司 發光二極體結構
TWI520383B (zh) * 2013-10-14 2016-02-01 新世紀光電股份有限公司 發光二極體封裝結構
US9419189B1 (en) * 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency
TWI542047B (zh) * 2014-01-13 2016-07-11 邱羅利士公司 發光二極體封裝結構之製法
JP2015173142A (ja) * 2014-03-11 2015-10-01 株式会社東芝 半導体発光装置
JP5919484B2 (ja) * 2014-05-13 2016-05-18 パナソニックＩｐマネジメント株式会社 窒化物半導体発光ダイオード
CN203910851U (zh) * 2014-05-23 2014-10-29 晶科电子（广州）有限公司 一种白光led芯片
CN104253194A (zh) * 2014-09-18 2014-12-31 易美芯光（北京）科技有限公司 一种芯片尺寸白光led的封装结构及方法
US20160181476A1 (en) * 2014-12-17 2016-06-23 Apple Inc. Micro led with dielectric side mirror
US20160190406A1 (en) * 2014-12-24 2016-06-30 Epistar Corporation Light-emitting device and manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101855735A (zh) * 2007-11-19 2010-10-06 松下电器产业株式会社 半导体发光装置及半导体发光装置的制造方法
CN103534822A (zh) * 2011-04-20 2014-01-22 株式会社Elm 发光装置及其制造方法
CN203774363U (zh) * 2012-11-12 2014-08-13 西铁城控股株式会社 半导体发光装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107689409A (zh) * 2016-08-03 2018-02-13 展晶科技(深圳)有限公司 发光二极管
CN107689409B (zh) * 2016-08-03 2019-09-20 展晶科技(深圳)有限公司 发光二极管
CN111293199A (zh) * 2017-01-20 2020-06-16 光宝光电(常州)有限公司 发光二极管封装结构、发光二极管封装模块

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