CN105954985A - Method for measuring overlay precision of photoetching process, and mask plate - Google Patents
Method for measuring overlay precision of photoetching process, and mask plate Download PDFInfo
- Publication number
- CN105954985A CN105954985A CN201610498868.8A CN201610498868A CN105954985A CN 105954985 A CN105954985 A CN 105954985A CN 201610498868 A CN201610498868 A CN 201610498868A CN 105954985 A CN105954985 A CN 105954985A
- Authority
- CN
- China
- Prior art keywords
- layer
- alignment
- labelling
- alignment mark
- exposing patterns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
Abstract
The invention provides a method for measuring overlay precision of a photoetching process, and a mask plate. A current-layer overlay alignment mark and an interlayer overlay alignment mark are arranged around the same exposure pattern concurrently. According to the method and the mask plate provided by the invention, the overlay precision of the exposure pattern in each layer can be measured, and the interlayer overlay precision can be measured as well, so that the overlay precision of the multi-layered exposure pattern can be improved.
Description
Technical field
The present invention relates to technical field of integrated circuits, be specifically related to a kind of side measuring photoetching process alignment precision
Method and mask plate.
Background technology
Along with the integrated level of semiconductor chip improves constantly, the characteristic size of transistor constantly narrows down to nanoscale,
Production technology also becomes increasingly complex.In order to reach good device performance, each litho pattern not only to have sternly
The characteristic size live width of lattice, also to ensure accurate overlay alignment (overlay) between layers, and it not only depends on
In ability and the level of technique of board, it is subject to control system (such as APC, Advanced Process
Control) degree of perfection.
Alignment is self-evident to the importance of photoetching process and product yield, and the Detection & Controling of alignment are just
It is particularly important.
Alignment precision detection is typically respectively to arrange one in the figure of upper and lower two the photoetching levels having aligned relationship
Individual alignment precision test pattern, by keeping the alignment of the relative position of two alignment precision test pattern, comes
Ensure the alignment of two-layer litho pattern.Conventional alignment precision test pattern include inside and outside stripe shape (bar-in-bar),
Inside and outside box (box-in-box) and advanced image volume degree type (AIM) etc..Further, the set of technological level is determined
Quarter, ability, not only included the limit capacity of each technique level alignment itself, more include each process layer time itself with
And the stability of the alignment between each process layer time, this more importance for the product of volume production.If
We represent stability S of alignment, have the stablizing of ground floor alignment of para-position (alignment) relation
Property A represents have stability B of the second layer alignment of para-position (alignment) relation to represent, then this two
The stability of layer alignment can simply be characterized as: S=A*B, and the alignment stability of any single level all can shadow
Ring final alignment precision.And it practice, there is the technique level of alignment complicated more than above, such as D and
There is alignment in C, C exists again alignment with B, and B exists alignment etc. with A again, then
The stability finally having the technique level alignment of alignment is dependent on the most each alignment in some sense
Level, is represented simply as: S=A*B*C*D ....Accordingly, it would be desirable to improve the alignment precision of product, particularly
Stability, it is necessary to the strict alignment stability controlling to be respectively arranged with alignment level.And it practice, existing technique
Lack the alignment in each simple layer time itself effective control device, particularly exposing patterns
(Intra-field overlay) part.
Summary of the invention
In order to overcome problem above, improve light it is desirable to provide a kind of by new overlay mark combination
The method of carving technology alignment precision and mask plate.
In order to achieve the above object, the invention provides a kind of mask plate, it has exposing patterns, same
It is provided with around individual exposing patterns when layer alignment mark and interlayer alignment mark simultaneously.
Preferably, after the adjacent exposure pattern of same layer alignment, between adjacent exposure pattern when layer set
Quarter, alignment mark was mutually nested.
Preferably, described the first labelling and the second labelling, the chi of the first labelling are included when layer alignment mark
The very little size being more than the second labelling, the second labelling between adjacent exposure pattern comes in embedding the first labelling
Realize the alignment between layer adjacent exposure pattern.
Preferably, described first labelling around an exposing patterns by horizontal translation or vertically after translation with
Described second labelling around this exposing patterns is mutually nested.
Preferably, in mirror images between described first labelling, in mirror image pair between described second labelling
Claiming figure, the mirror axis of the first labelling and the mirror axis of the second labelling are on the same line.
Preferably, after the exposing patterns of adjacent layer is mutually aligned, the interlayer alignment pair of the exposing patterns of adjacent layer
Fiducial mark note is mutually nested.
Preferably, the figure that interlayer alignment mark is constituted is centrosymmetric figure.
Preferably, interlayer alignment mark with when layer alignment mark the most overlapping.
Preferably, the pattern when layer alignment mark of the adjacent exposure pattern of same layer is identical, adjacent layer
The pattern of interlayer alignment mark of exposing patterns differ.
In order to achieve the above object, present invention also offers and a kind of use above-mentioned mask plate to measure photoetching work
The method of skill alignment precision, comprising:
To ground floor exposing patterns, ground floor when the interlayer overlay alignment of layer alignment mark and ground floor
Labelling is exposed, and measures described when the alignment precision of layer alignment mark；
To have with ground floor exposing patterns the exposing patterns of the second layer of aligned relationship, the second layer when layer alignment
The interlayer alignment mark of alignment mark and the second layer is exposed, and measures the interlayer of the described second layer
The alignment precision of alignment mark and the described second layer when the alignment precision of layer alignment mark.
The extra of alignment precision that present invention achieves the exposing patterns (Intra-field) to each level controls,
Ensure that the alignment precision of the exposing patterns of each level is stable in less scope, because the alignment of exposing patterns
Precision and stability are the important component parts of the overall alignment precision of impact, directly with the alignment ability of board and
Stability is correlated with, it is necessary to be strictly controlled by, if controlling bad, the alignment precision of interlayer can be caused with steady
Qualitative serious variation, and the follow-up technique level having alignment can be persistently transferred in this impact, can lead
Cause its alignment precision to be more difficult to control to stability.Therefore, the present invention is not only to the exposing patterns in every layer
Alignment precision measure and the alignment precision of interlayer measured the most simultaneously, improve multi-level exposure diagram
The alignment precision of case.
Accompanying drawing explanation
Fig. 1 is the showing when layer alignment mark around the exposing patterns of a preferred embodiment of the present invention
It is intended to
Fig. 2 is that the interlayer overlay alignment of a preferred embodiment of the present invention indicates intention
Fig. 3 be the exposing patterns of the adjacent layer of a preferred embodiment of the present invention to punctual when layer alignment pair
Fiducial mark note and the position relationship schematic diagram of interlayer alignment mark
Detailed description of the invention
For making present disclosure more clear understandable, below in conjunction with Figure of description, to present disclosure
It is described further.Certainly the invention is not limited in this specific embodiment, those skilled in the art institute
Known to general replacement be also covered by within the scope of the present invention.
Below in conjunction with accompanying drawing 1-3 and specific embodiment, the present invention is described in further detail.It should be noted that,
Accompanying drawing all uses the form simplified very much, uses non-ratio accurately, and only in order to facilitate, clearly to reach
Aid in illustrating the purpose of the present embodiment.
Referring to Fig. 1-3, the mask plate of the present embodiment is included in around same exposing patterns to be provided with simultaneously works as
Layer alignment mark and interlayer alignment mark.In the present embodiment, as it is shown in figure 1, the phase of same layer
The pattern when layer alignment mark of adjacent exposing patterns S with S ' is identical, here, and the adjacent exposure of same layer
Pattern S alignment after, be positioned between adjacent exposing patterns S and S ' when layer alignment mark mutually nested,
That is to say that position is corresponding, in Fig. 1 solid box be an exposing patterns S and about when layer overlay alignment
Labelling 01,02, an exposing patterns S ' that empty wire frame representation is adjacent and about when layer alignment mark
01’、02’.As it is shown in figure 1, exposing patterns S's includes the first labelling 01 and when layer alignment mark
Two labellings 02, the size of the first labelling 01, more than the size of the second labelling 02, is positioned at adjacent exposing patterns
The second labelling 02 ' between S and S ' realizes in embedding the first labelling 01 as adjacent exposing patterns S and S ' of layer
Between alignment, additionally, for exposing patterns S or S ', the first labelling 01 about passes through
Can be mutually nested with the second labelling 02 after horizontal translation or vertically translation.As it is shown in figure 1, the first labelling 01
Between in mirror images, in mirror images between the second labelling 02, the mirror image of the first labelling 02
The mirror axis of axis of symmetry and the second labelling 02 on the same line, first labelling 01 ' of exposing patterns S '
Pattern and exposing patterns S and the first labelling 01 and figure of the second labelling 02 about with the second labelling 02 '
Case is identical；Here, the first labelling 01 is concentric circular or same with the form of the second mutually nested figure of labelling 02 '
Heart polygon, wherein the limit number of concentric polygon can be more than or equal to three, such as equilateral triangle, square
Deng.
Exposing patterns and interlayer alignment mark about time shown in Fig. 3 for being mutually aligned and work as layer
The schematic diagram of alignment mark, in Fig. 3, has interlayer alignment mark 101 around exposing patterns S
With when layer alignment mark 01,02, dotted line frame 201 represents the exposing patterns on exposing patterns S-phase neighbour upper strata
Interlayer alignment mark 201 around, the exposing patterns adjacent with on it as exposing patterns S is mutually aligned
Time, interlayer alignment mark 201 is mutually nested with interlayer alignment mark 101, as shown in Figure 3.
In the present embodiment, the pattern of the interlayer alignment mark of the exposing patterns of adjacent layer differs, such as Fig. 2 institute
Show, 101 be ought layer by layer between alignment mark, 201 are and the adjacent layer having aligned relationship when layer exposing patterns
Interlayer alignment mark schematic diagram, when the exposing patterns of exposing patterns S Yu its upper strata is mutually aligned,
Interlayer alignment mark 101 around exposing patterns S is adjacent the interlayer alignment mark 201 on upper strata
Mutually nested, the figure that interlayer alignment mark 101 is constituted can be centrosymmetric figure, interlayer alignment
The figure that alignment mark 201 is constituted can be centrosymmetric figure, additionally, around the exposing patterns of same layer
Interlayer alignment mark arrangement not with when layer alignment mark overlapping.
Additionally, the present embodiment additionally provides a kind of use above-mentioned mask plate to measure photoetching process alignment essence
The method of degree, comprising:
To ground floor exposing patterns, ground floor when the interlayer overlay alignment of layer alignment mark and ground floor
Labelling is exposed, and measures described when the alignment precision of layer alignment mark；
To have with ground floor exposing patterns the exposing patterns of the second layer of aligned relationship, the second layer when layer alignment
The interlayer alignment mark of alignment mark and the second layer is exposed, and measures the interlayer alignment of the second layer
The alignment precision of alignment mark and the second layer when the alignment precision of layer alignment mark.
Therefore, use the mask plate of the present embodiment, when preparing the exposing patterns of each layer and adjacent layer
Measurement and the exposure of adjacent layer of the alignment precision of the exposing patterns of same layer all can be realized during exposing patterns
The measurement of the alignment precision of pattern, thus improve alignment accuracy and the adjacent layer of the exposing patterns of same layer
The alignment accuracy of exposing patterns.
Although the present invention discloses as above with preferred embodiment, right described embodiment is lifted only for the purposes of explanation
Example, is not limited to the present invention, and those skilled in the art is without departing from spirit and scope of the invention
On the premise of can make some changes and retouching, the protection domain that the present invention is advocated should be with claims institute
State and be as the criterion.
Claims (10)
1. a mask plate, it is characterised in that be simultaneously provided with when layer alignment pair around same exposing patterns
Fiducial mark note and interlayer alignment mark.
Mask plate the most according to claim 1, it is characterised in that the adjacent exposure pattern pair of same layer
After standard, between adjacent exposure pattern when layer alignment mark mutually nested.
Mask plate the most according to claim 1, it is characterised in that described when layer alignment mark bag
Including the first labelling and the second labelling, the size of the first labelling, more than the size of the second labelling, is positioned at adjacent exposure
The second labelling between pattern realizes the alignment between layer adjacent exposure pattern in embedding the first labelling.
Mask plate the most according to claim 3, it is characterised in that described around an exposing patterns
First labelling by horizontal translation or vertically after translation with this exposing patterns around described second labelling the most embedding
Set.
Mask plate the most according to claim 3, it is characterised in that in mirror image between described first labelling
Symmetric figure, in mirror images between described second labelling, the mirror axis of the first labelling and second
The mirror axis of labelling is on the same line.
Mask plate the most according to claim 1, it is characterised in that the exposing patterns of adjacent layer is the most right
After standard, the interlayer alignment mark of the exposing patterns of adjacent layer is mutually nested.
Mask plate the most according to claim 6, it is characterised in that interlayer alignment mark is constituted
Figure is centrosymmetric figure.
Mask plate the most according to claim 1, it is characterised in that interlayer alignment mark with work as layer
Alignment mark is the most overlapping.
Mask plate the most according to claim 1, it is characterised in that the adjacent exposure pattern of same layer
When the pattern of layer alignment mark is identical, the pattern of the interlayer alignment mark of the exposing patterns of adjacent layer
Differ.
10. the mask plate used described in claim 1-9 any one is to measure photoetching process alignment essence
The method of degree, it is characterised in that including:
To ground floor exposing patterns, ground floor when the interlayer overlay alignment of layer alignment mark and ground floor
Labelling is exposed, and measures described when the alignment precision of layer alignment mark；
To have with ground floor exposing patterns the exposing patterns of the second layer of aligned relationship, the second layer when layer alignment
The interlayer alignment mark of alignment mark and the second layer is exposed, and measures the interlayer of the described second layer
The alignment precision of alignment mark and the described second layer when the alignment precision of layer alignment mark.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610498868.8A CN105954985A (en) | 2016-06-30 | 2016-06-30 | Method for measuring overlay precision of photoetching process, and mask plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610498868.8A CN105954985A (en) | 2016-06-30 | 2016-06-30 | Method for measuring overlay precision of photoetching process, and mask plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105954985A true CN105954985A (en) | 2016-09-21 |
Family
ID=56901620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610498868.8A Pending CN105954985A (en) | 2016-06-30 | 2016-06-30 | Method for measuring overlay precision of photoetching process, and mask plate |
Country Status (1)
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106292175A (en) * | 2016-09-30 | 2017-01-04 | 上海华虹宏力半导体制造有限公司 | Litho machine detection mask plate |
| CN106647162A (en) * | 2017-03-22 | 2017-05-10 | 京东方科技集团股份有限公司 | Mask and exposure method and device |
| CN107452717A (en) * | 2017-08-22 | 2017-12-08 | 长江存储科技有限责任公司 | Semiconductor making method |
| CN109541884A (en) * | 2018-12-29 | 2019-03-29 | 上海华力微电子有限公司 | Splice the test light shield of product and combinations thereof method |
| CN110333642A (en) * | 2019-07-10 | 2019-10-15 | 武汉新芯集成电路制造有限公司 | A kind of light shield |
| CN110687759A (en) * | 2018-07-06 | 2020-01-14 | 上海微电子装备（集团）股份有限公司 | Mask plate and bonding alignment method |
| CN110750038A (en) * | 2019-11-25 | 2020-02-04 | 上海华力微电子有限公司 | Mask plate, standard plate and alignment pattern error compensation method |
| CN111045290A (en) * | 2019-11-25 | 2020-04-21 | 上海华虹宏力半导体制造有限公司 | Method for sharing alignment layer mask |
| CN113985710A (en) * | 2021-10-27 | 2022-01-28 | 长江先进存储产业创新中心有限责任公司 | Overlay measuring method and manufacturing method of semiconductor device |
| CN116736652A (en) * | 2023-08-11 | 2023-09-12 | 江苏芯德半导体科技有限公司 | Process method for exposure alignment in multilayer high-density packaging |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0141548A2 (en) * | 1983-10-13 | 1985-05-15 | Fujitsu Limited | Photomask pattern inspection |
| US5446521A (en) * | 1993-06-30 | 1995-08-29 | Intel Corporation | Phase-shifted opaquing ring |
| US20050036124A1 (en) * | 2003-08-13 | 2005-02-17 | Canon Kabushiki Kaisha | Scanning exposure technique |
| TW200801828A (en) * | 2006-06-23 | 2008-01-01 | Ind Tech Res Inst | Recticle pattern applied to mix-and-match lithography process and alignment method of thereof |
| KR20090072672A (en) * | 2007-12-28 | 2009-07-02 | 주식회사 하이닉스반도체 | Photo mask for overlay vernier and method for forming the overlay vernier using the same |
| CN103454852A (en) * | 2012-06-05 | 2013-12-18 | 中芯国际集成电路制造(上海)有限公司 | Mask and overlay precision measuring method |
| CN103995440A (en) * | 2014-06-12 | 2014-08-20 | 上海华力微电子有限公司 | Detection method of alignment performance of photoetching machine |
| CN204102865U (en) * | 2014-10-09 | 2015-01-14 | 中芯国际集成电路制造(北京)有限公司 | A kind of to locating tab assembly structure |
-
2016
- 2016-06-30 CN CN201610498868.8A patent/CN105954985A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0141548A2 (en) * | 1983-10-13 | 1985-05-15 | Fujitsu Limited | Photomask pattern inspection |
| US5446521A (en) * | 1993-06-30 | 1995-08-29 | Intel Corporation | Phase-shifted opaquing ring |
| US20050036124A1 (en) * | 2003-08-13 | 2005-02-17 | Canon Kabushiki Kaisha | Scanning exposure technique |
| TW200801828A (en) * | 2006-06-23 | 2008-01-01 | Ind Tech Res Inst | Recticle pattern applied to mix-and-match lithography process and alignment method of thereof |
| KR20090072672A (en) * | 2007-12-28 | 2009-07-02 | 주식회사 하이닉스반도체 | Photo mask for overlay vernier and method for forming the overlay vernier using the same |
| CN103454852A (en) * | 2012-06-05 | 2013-12-18 | 中芯国际集成电路制造(上海)有限公司 | Mask and overlay precision measuring method |
| CN103995440A (en) * | 2014-06-12 | 2014-08-20 | 上海华力微电子有限公司 | Detection method of alignment performance of photoetching machine |
| CN204102865U (en) * | 2014-10-09 | 2015-01-14 | 中芯国际集成电路制造(北京)有限公司 | A kind of to locating tab assembly structure |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106292175A (en) * | 2016-09-30 | 2017-01-04 | 上海华虹宏力半导体制造有限公司 | Litho machine detection mask plate |
| CN106647162A (en) * | 2017-03-22 | 2017-05-10 | 京东方科技集团股份有限公司 | Mask and exposure method and device |
| CN107452717A (en) * | 2017-08-22 | 2017-12-08 | 长江存储科技有限责任公司 | Semiconductor making method |
| CN110687759B (en) * | 2018-07-06 | 2021-04-02 | 上海微电子装备（集团）股份有限公司 | Mask plate and bonding alignment method |
| CN110687759A (en) * | 2018-07-06 | 2020-01-14 | 上海微电子装备（集团）股份有限公司 | Mask plate and bonding alignment method |
| CN109541884A (en) * | 2018-12-29 | 2019-03-29 | 上海华力微电子有限公司 | Splice the test light shield of product and combinations thereof method |
| CN109541884B (en) * | 2018-12-29 | 2022-06-14 | 上海华力微电子有限公司 | Test photomask of spliced product and combination method thereof |
| CN110333642A (en) * | 2019-07-10 | 2019-10-15 | 武汉新芯集成电路制造有限公司 | A kind of light shield |
| CN110333642B (en) * | 2019-07-10 | 2022-07-19 | 武汉新芯集成电路制造有限公司 | Light shield |
| CN111045290A (en) * | 2019-11-25 | 2020-04-21 | 上海华虹宏力半导体制造有限公司 | Method for sharing alignment layer mask |
| CN110750038B (en) * | 2019-11-25 | 2022-06-14 | 上海华力微电子有限公司 | Mask plate, standard plate and alignment pattern error compensation method |
| CN110750038A (en) * | 2019-11-25 | 2020-02-04 | 上海华力微电子有限公司 | Mask plate, standard plate and alignment pattern error compensation method |
| CN111045290B (en) * | 2019-11-25 | 2024-02-06 | 上海华虹宏力半导体制造有限公司 | Method for sharing alignment layer mask |
| CN113985710A (en) * | 2021-10-27 | 2022-01-28 | 长江先进存储产业创新中心有限责任公司 | Overlay measuring method and manufacturing method of semiconductor device |
| CN113985710B (en) * | 2021-10-27 | 2023-09-12 | 长江先进存储产业创新中心有限责任公司 | Overlay measurement method and manufacturing method of semiconductor device |
| CN116736652A (en) * | 2023-08-11 | 2023-09-12 | 江苏芯德半导体科技有限公司 | Process method for exposure alignment in multilayer high-density packaging |
| CN116736652B (en) * | 2023-08-11 | 2023-10-27 | 江苏芯德半导体科技有限公司 | Process method for exposure alignment in multilayer high-density packaging |
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