CN106601856A - Triple-junction solar cell and manufacturing method thereof - Google Patents
Triple-junction solar cell and manufacturing method thereof Download PDFInfo
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- CN106601856A CN106601856A CN201510669722.0A CN201510669722A CN106601856A CN 106601856 A CN106601856 A CN 106601856A CN 201510669722 A CN201510669722 A CN 201510669722A CN 106601856 A CN106601856 A CN 106601856A
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- 238000004519 manufacturing process Methods 0.000 title abstract description 9
- 230000007704 transition Effects 0.000 claims abstract description 58
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims abstract description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 55
- 238000003475 lamination Methods 0.000 claims description 27
- 229910052738 indium Inorganic materials 0.000 claims description 26
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 26
- 238000009792 diffusion process Methods 0.000 claims description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 12
- 238000002360 preparation method Methods 0.000 claims description 11
- 229910005540 GaP Inorganic materials 0.000 claims description 8
- 229910052790 beryllium Inorganic materials 0.000 claims description 8
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 8
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical group [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 5
- 239000000758 substrate Substances 0.000 abstract description 18
- 230000008901 benefit Effects 0.000 abstract description 5
- 238000001228 spectrum Methods 0.000 abstract description 4
- 230000003213 activating effect Effects 0.000 abstract description 3
- 238000010030 laminating Methods 0.000 abstract 2
- 230000010354 integration Effects 0.000 abstract 1
- 230000008859 change Effects 0.000 description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000009466 transformation Effects 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 230000004907 flux Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009388 chemical precipitation Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a triple-junction solar cell. The triple-junction solar cell comprises a Si child cell, a transition layer group, a first tunnel junction, an AlGaAs child cell, a second tunnel junction and an AlGaInP child cell, wherein the transition layer group, the first tunnel junction, the AlGaAs child cell, the second tunnel junction and the AlGaInP child cell are successively laminated and arranged on the Si child cell. The invention also discloses a manufacturing method of the triple-junction solar cell. The method comprises the following steps of manufacturing the Si child cell; successively laminating and manufacturing the transition layer group, the first tunnel junction and the AlGaAs child cell on the Si child cell; and successively laminating and manufacturing the second tunnel junction and the AlGaInP child cell on the AlGaAs child cell. According to the triple-junction solar cell of the invention, a spectrum covering range of the Si child cell can be effectively widened and an open-circuit voltage of the cell is increased so as to increase cell efficiency. Simultaneously, by using the triple-junction solar cell, through activating a silicon substrate, the Si child cell is formed; and a silicon chip is served as the substrate and advantages that cost is low; mechanical strength is high; large-area integration can be easily achieved and so on are used so that a possible is provided for large scale manufacturing.
Description
Technical field
The invention belongs to area of solar cell, specifically, is related to a kind of three-joint solar cell and its system
Preparation Method.
Background technology
Monocrystal silicon and polycrystalline silicon solar cell on market, its average photoelectric transformation efficiency are relatively low, mainly because
It is fixed for its band gap, the solar spectrum that can be absorbed is limited, so as to the solar energy for causing 85% is converted
For heat energy, effective electric energy could not be changed into.And to tie III-V compound semiconductor solar cell more with which more
Plant the different semi-conducting material of band gap width and absorb the part sunlight matched with its band gap width, so as to
Realize that the wide spectrum to sunlight absorbs.At present, the photoelectric transformation efficiency of the binode battery of direct growth surpasses
Cross 30%；Highest photoelectric transformation efficiency of the tri- junction battery energy batteries of GaInP/GaAs/Ge under a sun
32%-33% is reached.But, enter one based on the photoelectric transformation efficiency of three junction battery energy batteries of germanium substrate
Step is improved and still faces two important problems of Lattice Matching and currents match；In addition, germanium substrate is expensive, and
The germanium wafer that can be prepared at present is relatively small so that the manufacturing cost based on germanium substrate battery is higher, difficult
To be manufactured on a large scale.
Low cost and large area it is integrated need order about people find on a silicon substrate make III-V compound partly lead
The method of body solaode.In addition to economic factor, the mechanical strength of silicon substrate is big, and thermal conductance is good,
Support substrate can have been done not only but also the advantages such as bottom cell can have been done, thus by this ep-type material with can obtain
Efficient III-V compound quasiconductor is combined, either from cost still from environmental protection and efficiency in terms of,
All it is to be worth research；But how to prepare the silicon based cells that Lattice Matching monolithical tandem can cover full spectrum again
It is urgent problem.
The content of the invention
To solve the problems, such as above-mentioned prior art, the invention provides a kind of three-joint solar cell, its
Lamination is arranged successively including Si batteries and on the Si batteries transition zone group, the first tunnel knot,
The sub- batteries of AlGaAs, the second tunnel knot, the sub- batteries of AlGaInP；Wherein, the Si batteries, transition zone
Group, the first tunnel knot, the sub- batteries of AlGaAs, the second tunnel knot and the sub- batteries of AlGaInP Lattice Matching successively.
Further, the Si batteries include arranging according to the direction away from the transition zone group successively lamination
N-type diffusion layer, p-type layer and the first back surface field；Wherein, the material of the n-type diffusion layer be gallium phosphide, institute
The material for stating p-type layer is p-type monocrystalline silicon piece, and the material of first back surface field is boron.
Further, the sub- batteries of the AlGaAs be included in first tunnel junctions successively lamination arrange the
Two back surface fields, the first base stage, the first emitter stage and first window layer；Wherein, the material of second back surface field is p
Type heavy doping AlGaInP；The material of first base stage is p-type doping AlGaAs；First emitter stage
Material be N-shaped heavy doping AlGaAs；The material of the first window layer is N-shaped heavy doping AlInP；n
Type doped source and p-type doped source are respectively silicon and beryllium.
Further, the sub- batteries of the AlGaInP be included in second tunnel junctions successively lamination arrange
3rd back surface field, the second base stage, the second emitter stage and the second Window layer；Wherein, the material of the 3rd back surface field is p
Type heavy doping AlGaInP；The material of the second base stage is p-type doping AlGaAs；The material of the second emitter stage is
N-shaped heavy doping AlGaAs；The material of the second Window layer is N-shaped heavy doping AlInP；Wherein, n-shaped doped source
Silicon and beryllium are respectively with p-type doped source.
Further, the transition zone group includes the transition that some laminations successively are arranged on the Si batteries
Layer Ga1-x(i)Inx(i)P, wherein, the value of i is followed successively by 1 according to the direction away from the Si batteries, 2,3,
4、……；The span of content x (i) of indium is 0 ＜ x (i)≤0.48.
Further, in the transition zone group, transition zone Ga1-x(i)Inx(i)The value of content x (i) of indium in P
Linearly increase according to the direction away from the Si batteries or step increases.
Further, in the transition zone group, each transition zone Ga1-x(i)Inx(i)The thickness of P is less than 200
Nm, the gross thickness of the transition zone group are less than 2 μm.
Another object of the present invention is also resided in and provides a kind of preparation method of three-joint solar cell, and which includes：
Prepare Si batteries；On the Si batteries successively lamination prepare transition zone group, the first tunnel knot and
The sub- batteries of AlGaAs；On the sub- batteries of the AlGaAs, lamination prepares the second tunnel knot and AlGaInP successively
Sub- battery.
Further, the concrete grammar for preparing the Si batteries includes：P-type monocrystalline silicon piece is chosen as institute
State the p-type layer of Si batteries；10 are spread on a wherein surface of the p-type single crystalline Si19cm-3Boron,
Form the first back surface field of the Si batteries；Gallium phosphide is grown on another surface of the p-type monocrystalline silicon piece
As the n-type diffusion layer of the Si batteries.
Further, the transition zone group includes that lamination is arranged on some transition on the Si batteries successively
Layer Ga1-x(i)Inx(i)P, wherein, the value of i is followed successively by 1 according to the direction away from the Si batteries, 2,3,
4、……；The span of content x (i) of indium is 0 ＜ x (i)≤0.48.
Beneficial effects of the present invention：The present invention using p-type monocrystalline silicon piece as silicon substrate, by activating the silicon
Substrate forms Si batteries, and grows the sub- batteries of AlGaAs and the sub- batteries of AlGaInP on this basis, from
And prepared the Si/AlGaAs/AlGaInP three-joint solar cells of monolithical tandem；Three knots of the present invention are too
Positive energy battery can effectively widen the spectral coverage of Si batteries, improve the open-circuit voltage of battery, so as to
Improve battery efficiency；Meanwhile, with silicon chip as substrate, make use of its low cost, high mechanical strength and be conducive to
The advantages of large area is integrated, also provides possibility for extensive manufacture.
Description of the drawings
By combining the following description that accompanying drawing is carried out, above and other aspect of embodiments of the invention, feature
Will become clearer from advantage, in accompanying drawing：
Fig. 1 is the structural representation of three-joint solar cell according to an embodiment of the invention；
Fig. 2 is the structural representation of transition zone group according to an embodiment of the invention；
Fig. 3 be according to an embodiment of the invention the preparation method of three-joint solar cell the step of flow chart.
Specific embodiment
Hereinafter, with reference to the accompanying drawings to describing embodiments of the invention in detail.However, it is possible to many different
Form is implementing the present invention, and the present invention should not be construed as limited to the specific embodiment that illustrates here.
On the contrary, there is provided these embodiments are for the principle and its practical application of explaining the present invention, so that this area
Others skilled in the art it will be appreciated that various embodiments of the present invention and being suitable for the various of specific intended application and repairing
Change.
In the accompanying drawings, for the sake of clarity, the shape and size of element, and identical label can be exaggerated
Same or analogous element will be used to indicate all the time will.
It will be appreciated that although various elements can be described using term " first ", " second " etc. here,
But these elements should not be limited by these terms.These terms are only used for an element and another yuan
Part makes a distinction.
Fig. 1 is the structural representation of three-joint solar cell according to an embodiment of the invention.
With reference to Fig. 1, three-joint solar cell includes according to an embodiment of the invention：Si batteries 1, and
On Si batteries 1 successively lamination arrange transition zone group 41, the sub- battery of the first tunnel knot 42, AlGaAs
2nd, the sub- battery of the second tunnel knot 43, AlGaInP 3.
Specifically, the Si batteries 1 are included according to the direction away from the transition zone group 41, in transition zone
Organize lamination is arranged successively under 41 n-type diffusion layer, p-type layer, the first back surface field.In the present embodiment, it is described
The material of n-type diffusion layer is gallium phosphide；The material of p-type layer is p-type monocrystalline silicon piece, and the p-type layer is conduct
The launch site of the Si batteries 1；The material of the first back surface field is containing 1019cm- 3Boron.Wherein, for being formed
The THICKNESS CONTROL of the gallium phosphide of the n-type diffusion layer is less than 500nm；That is, the Si batteries
1 includes the first back surface field and lamination is arranged on the p-type layer in first back surface field and n-type diffusion layer successively,
Wherein, the n-type diffusion layer is adjacent with transition zone group 41.
The sub- batteries of AlGaAs 2 be included in the second back surface field that lamination is arranged successively on first tunnel knot 42,
First base stage, the first emitter stage and first window layer.In the present embodiment, the material of the second back surface field is p-type
Heavy doping AlGaInP；The material of the first base stage is p-type doping AlGaAs；The material of the first emitter stage is n
Type heavy doping AlGaAs；The material of first window layer is N-shaped heavy doping AlInP；Wherein, n-shaped doped source and
P-type doped source is respectively silicon and beryllium；Wherein to avoid impact of the dislocation that lattice mismatch brings to battery efficiency,
In the sub- batteries of above-mentioned AlGaAs 2, the mass fraction of aluminum is 3%～10%.
The sub- batteries of AlGaInP 3 be included in the 3rd back surface field that lamination is arranged successively on second tunnel knot 43,
Second base stage, the second emitter stage and the second Window layer.In the present embodiment, the material of the 3rd back surface field is p-type
Heavy doping AlGaInP；The material of the second base stage is p-type doping AlGaAs；The material of the second emitter stage is n
Type heavy doping AlGaAs；The material of the second Window layer is N-shaped heavy doping AlInP；Wherein, n-shaped doped source and
P-type doped source is respectively silicon and beryllium；Wherein to avoid impact of the dislocation that lattice mismatch brings to battery efficiency,
In the sub- batteries of above-mentioned AlGaInP 3, the mass fraction of aluminum is 3%～10%.
More specifically, with reference to shown in Fig. 2, the transition zone group 41 includes that the material of some laminations successively is
Ga1-x(i)Inx(i)The transition zone of P, wherein, the value of i is followed successively by 1 according to the direction away from Si batteries 1,2,
3rd, 4 ... the positive integer such as .., and represent that the span of the x (i) of the content of indium is 0 ＜ x (i)≤0.48.Also
It is to say, transition zone group 41 represents a series of Gas of the indium content in the range of 0 ＜ x (i)≤0.481-x(i)Inx(i)P layers
Combination, wherein, the change of indium content x (i) is by controlling the method for indium source flux so as to forming a series of components
The transition zone group 41 of gradual change, and the variation pattern of indium content x (i) is may be selected from according to the side away from Si batteries 1
Any one in the mode increased to linearly increasing or step.In the present embodiment, the change of indium content x (i)
Change mode is that step is presented according to the direction away from Si batteries 1 to increase, and the initial value of x (i) is 0.04,
Stop value is 0.48, and increasing degree is 0.04；That is, in the present embodiment, transition zone group 41 includes
Ga of the layer-by-layer growth on Si batteries 1 successively0.96In0.04P 4101、Ga0.92In0.08P 4102、Ga0.88In0.12P
4103、Ga0.84In0.16P 4104、Ga0.8In0.2P 4105、Ga0.76In0.24P 4106、Ga0.72In0.28P 4107、
Ga0.68In0.32P 4108、Ga0.64In0.36P 4109、Ga0.6In0.4P 4110、Ga0.56In0.44P 4111 and
Ga0.52In0.48Totally 12 layers of P 4112, i.e. x (1) is 0.04, x (2) is 0.08, x (3) is 0.12, x (4) is 0.16,
X (5) is 0.20, x (6) is 0.24, x (7) is 0.28, x (8) is 0.32, x (9) is 0.36, x (10) is 0.40,
X (11) is 0.44, x (12) is 0.48, as shown in Fig. 2 and now Ga0.52In0.48The lattice parameter of P 4112 with
The lattice parameter of the first tunnel knot 42 matches；But, in transition zone group 41, the span of x (i)
Minima is not limited to 0.04, with (i.e. maximum according to specific variation pattern and stepping number of times control final value
Value) for 0.48.
In transition zone group 41, each transition zone Ga1-x(i)Inx(i)The thickness of P is less than 200nm.
It should be noted that in the present embodiment, in transition zone group 41, the variation pattern of indium content x (i) is platform
Stepwise increases；But the present invention is not restricted to this, when indium content x (i) is increased with step, control of advancing the speed
Make 4%～40%；Meanwhile, in transition zone group 41, the change of indium content x (i) can also pass through line
Property increased mode realizing, but no matter select the increase mode of which kind of indium content x (i), transition zone group 41
Gross thickness need to be controlled less than 2 μm.
In the present embodiment, the material of the first tunnel knot 42 is highly doped GaAs；Second tunnel knot 43 includes
The N-shaped tunnel layer arranged according to the direction away from the Si batteries 1 successively lamination and p-type tunnel layer,
In the present embodiment, the material of N-shaped tunnel layer and p-type tunnel layer is respectively N-shaped heavy doping GaInP and p-type weight
Doping GaInP.
Certainly, in the three-joint solar cell of the present embodiment, not only Ga0.52In0.48The lattice of P 4112
Parameter is matched with the lattice parameter of the first tunnel knot 42, it is required that Si batteries 1, transition zone group 41,
The sub- battery of the sub- battery 2 of first tunnel knot 42, AlGaAs, the second tunnel knot 43 and AlGaInP 3 is successively
Lattice Matching, that is to say, that, it is desirable to equal Lattice Matching between per two adjacent structures.
Above-mentioned three-joint solar cell also needs to prepare electrode, therefore, according to the three-joint solar electricity of the present embodiment
Pond also includes the GaAs contact layers 44 being arranged on the top surface of the sub- batteries of AlGaInP 3, is separately positioned on
The back electrode 45 and gate electrode 46 of the top surface of the basal surface and GaAs contact layers 44 of Si batteries 1, with
And it is arranged on the anti-film 47 of the top surface of gate electrode 46；Above-mentioned top surface or basal surface refer both to exposed surface.
Hereinafter the preparation method of the three-joint solar cell to the present embodiment is described in detail.
Referring in particular to Fig. 3, the preparation method of three-joint solar cell according to an embodiment of the invention, including such as
Lower step：
In step 110, Si batteries 1 are prepared.
Specifically, p-type monocrystalline silicon piece is chosen first as substrate；Then, on a wherein surface of the substrate
One layer 10 of diffusion19cm-3Boron, form the first back surface field of the Si batteries 1；Finally, in the substrate
Another surface on prepare gallium phosphide.In the present embodiment, the p-type monocrystalline silicon piece as Si is electric
The p-type layer in pond 1, and gallium phosphide is then n-type diffusion layer, the i.e. launch site of the Si batteries 1；Phosphatization
Phosphorus in gallium is spread to the direction of p-type monocrystalline silicon piece, so as to form PN junction.
What deserves to be explained is, the Si batteries 1 in the present embodiment are by activation with p-type monocrystalline silicon piece as material
Substrate complete to prepare；Meanwhile, first is formed by the diffused with boron on a wherein surface of the substrate carry on the back
, it is also possible to increase surface loading.
In the step 120, on Si batteries 1, lamination prepares transition zone group 41, the first tunnel knot 42 successively
And the sub- batteries of AlGaAs 2.
Specifically, the transition zone group 41 includes that the material of lamination successively is Ga1-x(i)Inx(i)Some transition of P
Layer, wherein, the value of i is followed successively by 1 according to the direction away from Si batteries 1,2,3,4 ... .. etc. is just whole
Number, and represent that the span of the x (i) of the content of indium is 0 ＜ x (i)≤0.48.That is, transition zone group 41
Represent a series of Gas of the indium content in the range of 0 ＜ x (i)≤0.481-x(i)Inx(i)The combination of P transition zones, wherein,
The change of indium content x (i) is by controlling the method for indium source flux so as to form a series of transition zone of content gradually variationals
Group 41, and the variation pattern of indium content x (i) may be selected from according to away from Si batteries 1 dimension linear increase or
Any one in the mode that step increases.In the present embodiment, the variation pattern of indium content x (i) be according to
Step increase is presented away from the direction of Si batteries 1, and the initial value of x (i) is 0.04, stop value is 0.48,
Increasing degree is 0.04；That is, as shown in Fig. 2 in the present embodiment, transition zone group 41 include according to
Ga of the secondary layer-by-layer growth on Si batteries 10.96In0.04P 4101、Ga0.92In0.08P 4102、Ga0.88In0.12P
4103、Ga0.84In0.16P 4104、Ga0.8In0.2P 4105、Ga0.76In0.24P 4106、Ga0.72In0.28P 4107、
Ga0.68In0.32P 4108、Ga0.64In0.36P 4109、Ga0.6In0.4P 4110、Ga0.56In0.44P 4111 and
Ga0.52In0.48Totally 12 layers of P 4112, i.e. x (1) is 0.04, x (2) is 0.08, x (3) is 0.12, x (4) is 0.16,
X (5) is 0.20, x (6) is 0.24, x (7) is 0.28, x (8) is 0.32, x (9) is 0.36, x (10) is 0.40,
X (11) is 0.44, x (12) is 0.48, and now Ga0.52In0.48The lattice parameter of P 4112 and the first tunnel knot
42 lattice parameter matches；But, in transition zone group 41, the minima of the span of x (i) is not
0.04 is defined to, final value (i.e. maximum) is controlled as 0.48 according to specific variation pattern and stepping number of times
.
In transition zone group 41, each transition zone Ga1-x(i)Inx(i)The thickness of P is less than 200nm.
It should be noted that in the present embodiment, in transition zone group 41, the variation pattern of indium content x (i) is platform
Stepwise increases, but the present invention is not restricted to this, when indium content x (i) is increased with step, control of advancing the speed
Make 4%～40%；Meanwhile, in transition zone group 41, the change of indium content x (i) can also pass through line
Property increased mode realizing, but no matter select the increase mode of which kind of indium content x (i), transition zone group 41
Gross thickness need to be controlled less than 2 μm.
In the present embodiment, the material of the first tunnel knot 42 is that doping content is 5 × 1018cm-2～5 × 1019
cm-2GaAs.
The sub- batteries of AlGaAs 2 be included on first tunnel knot 42 successively the second back surface field of layer-by-layer growth,
First base stage, the first emitter stage and first window layer.In the present embodiment, the material of the second back surface field is p-type
Heavy doping AlGaInP；The material of the first base stage is p-type doping AlGaAs；The material of the first emitter stage is n
Type heavy doping AlGaAs；Wherein to avoid impact of the dislocation that lattice mismatch brings to battery efficiency,
In the sub- batteries of AlGaAs 2, the mass fraction of aluminum is 3%～10%；The material of first window layer is that N-shaped is heavily doped
Miscellaneous AlInP；Wherein, n-shaped doped source and p-type doped source are respectively silicon and beryllium.
In step 130, on the sub- batteries of AlGaAs 2 successively lamination prepare the second tunnel knot 43 and
The sub- batteries of AlGaInP 3.
Second tunnel knot 43 is included on the sub- batteries of AlGaAs 2 the N-shaped tunnel layer and p of layer-by-layer growth successively
Type tunnel layer, in the present embodiment, the material of the N-shaped tunnel layer and p-type tunnel layer is respectively N-shaped weight
Doping GaInP and p-type heavy doping GaInP.
The sub- batteries of AlGaInP 3 be included in the 3rd back surface field that lamination is arranged successively on second tunnel knot 43,
Second base stage, the second emitter stage and the second Window layer.In the present embodiment, the material of the 3rd back surface field is p-type
Heavy doping AlGaInP；The material of the second base stage is p-type doping AlGaAs；The material of the second emitter stage is n
Type heavy doping AlGaAs；Wherein to avoid impact of the dislocation that lattice mismatch brings to battery efficiency,
In the sub- batteries of AlGaInP 3, the mass fraction of aluminum is 3%～10%；The material of the second Window layer is that N-shaped is heavily doped
Miscellaneous AlInP；Wherein, n-shaped doped source and p-type doped source are respectively silicon and beryllium.
What deserves to be explained is, the sub- batteries 2 of the AlGaAs in the present embodiment and the sub- batteries 3 of AlGaInP, wherein
Contain a certain amount of aluminum, which can improve band gap；I.e. it is capable to provide higher open-circuit voltage.With
This comprises only a VA clan source in sub- batteries 2 of AlGaAs and the sub- batteries of AlGaInP 3, simultaneously in material
Easily control during material growth, the material property for preparing is also more excellent.
In step 140, GaAs contact layers 44, back electrode 45, gate electrode 46 and anti-film 47 are prepared.
Specifically, GaAs contact layers 44 are grown first on the top surface of the sub- batteries of AlGaInP 3；Then
Grow back electrode 45 and grid respectively on the top surface of the basal surface and GaAs contact layers 44 of Si batteries 1
Electrode 46；It is last that anti-film 47 is grown on the top surface of gate electrode 46；Above-mentioned top surface or basal surface are equal
Refer to the exposed surface of the sub- battery.
In the present embodiment, anti-film 47 is prepared using vapour deposition method, remaining each son in above-mentioned steps 110-140
The isostructural preparation of battery is prepared using molecular beam epitaxy, but the present invention is not restricted to this, other
The method that such as metal organic vapors chemical precipitation technology etc. is commonly used for battery growth.
Three-joint solar cell, prepares Si batteries by activating Si substrates according to an embodiment of the invention；
Growth thereon again prepares the sub- batteries 2 of AlGaAs and the sub- batteries 3 of AlGaInP, obtains monolithical tandem
Si/AlGaAs/AlGaInP three-joint solar cells.Low cost, the high mechanical properties of Si substrates are make use of not only
The advantages of with being conducive to large area integrated, possibility is provided for extensive manufacture；Meanwhile, in AlGaAs electricity
The material of the sub- battery such as pond 2 and the sub- batteries of AlGaInP 3 is selected, and the use of aluminum can improve band gap, and material
Only contain a VA clan source in material, preparation process is also easier to control.Therefore, embodiments in accordance with the present invention
Three-joint solar cell can effectively widen the spectral coverage of Si batteries, improve the open circuit electricity of battery
Pressure, so as to improve the photoelectric transformation efficiency of the three-joint solar cell.
Although illustrating and describing the present invention with reference to specific embodiment, those skilled in the art will
Understand：In the case of without departing from the spirit and scope of the present invention limited by claim and its equivalent,
Can here carry out the various change in form and details.
Claims (10)
1. a kind of three-joint solar cell, it is characterised in that including Si batteries, and in Si
On battery successively lamination arrange transition zone group, the first tunnel knot, the sub- batteries of AlGaAs, the second tunnel knot,
The sub- batteries of AlGaInP；Wherein, the Si batteries, transition zone group, the first tunnel knot, AlGaAs electricity
Pond, the second tunnel knot and the sub- batteries of AlGaInP Lattice Matching successively.
2. three-joint solar cell according to claim 1, it is characterised in that the Si battery bags
Include n-type diffusion layer, p-type layer and the first back surface field arranged according to the direction away from the transition zone group successively lamination；
Wherein, the material of the n-type diffusion layer is gallium phosphide, and the material of the p-type layer is p-type monocrystal silicon
Piece, the material of first back surface field is boron.
3. three-joint solar cell according to claim 1, it is characterised in that the AlGaAs is sub
Battery is included in first tunnel junctions the second back surface field that lamination is arranged successively, the first base stage, the first transmitting
Pole and first window layer；
Wherein, the material of second back surface field is p-type heavy doping AlGaInP；The material of first base stage is
P-type doping AlGaAs；The material of first emitter stage is N-shaped heavy doping AlGaAs；The first window
The material of layer is N-shaped heavy doping AlInP；N-shaped doped source and p-type doped source are respectively silicon and beryllium.
4. three-joint solar cell according to claim 1, it is characterised in that the AlGaInP is sub
Battery is included in second tunnel junctions the 3rd back surface field that lamination is arranged successively, the second base stage, the second transmitting
Pole and the second Window layer；
Wherein, the material of the 3rd back surface field is p-type heavy doping AlGaInP；The material of the second base stage adulterates for p-type
AlGaAs；The material of the second emitter stage is N-shaped heavy doping AlGaAs；The material of the second Window layer is N-shaped weight
Doping AlInP；Wherein, n-shaped doped source and p-type doped source are respectively silicon and beryllium.
5. according to the arbitrary described three-joint solar cell of Claims 1-4, it is characterised in that the mistake
Crossing layer group includes that lamination is arranged on some transition zone Ga on the Si batteries successively1-x(i)Inx(i)P, wherein,
The value of i is followed successively by 1 according to the direction away from the Si batteries, 2,3,4 ...；Content x (i) of indium
Span be 0 ＜ x (i)≤0.48.
6. three-joint solar cell according to claim 5, it is characterised in that in the transition zone group
In, transition zone Ga1-x(i)Inx(i)In P, the value of content x (i) of indium according to the direction away from the Si batteries is in
Linearly increasing or step increases.
7. three-joint solar cell according to claim 6, it is characterised in that in the transition zone group
In, each transition zone Ga1-x(i)Inx(i)The thickness of P is less than 200nm, and the gross thickness of the transition zone group is not
More than 2 μm.
8. a kind of preparation method of three-joint solar cell, it is characterised in that include：
Prepare Si batteries；
On the Si batteries, lamination prepares transition zone group, the first tunnel knot and AlGaAs electricity successively
Pond；
On the sub- batteries of the AlGaAs, lamination prepares the second tunnel knot and the sub- batteries of AlGaInP successively.
9. preparation method according to claim 8, it is characterised in that prepare the tool of the Si batteries
Body method includes：
P-type monocrystalline silicon piece is chosen as the p-type layer of the Si batteries；
10 are spread on a wherein surface of the p-type monocrystalline silicon piece19cm-3Boron, form Si electric
First back surface field in pond；
The N-shaped that gallium phosphide is grown on another surface of the p-type monocrystalline silicon piece as the Si batteries expands
Scattered layer.
10. preparation method according to claim 8 or claim 9, it is characterised in that the transition zone group bag
Include lamination successively and be arranged on some transition zone Ga on the Si batteries1-x(i)Inx(i)P, wherein, the value of i
Be followed successively by 1 according to the direction away from the Si batteries, 2,3,4 ...；The value of content x (i) of indium
Scope is 0 ＜ x (i)≤0.48.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060021565A1 (en) * | 2004-07-30 | 2006-02-02 | Aonex Technologies, Inc. | GaInP / GaAs / Si triple junction solar cell enabled by wafer bonding and layer transfer |
| CN101241945A (en) * | 2008-02-04 | 2008-08-13 | 苏州纳米技术与纳米仿生研究所 | Silicon base efficient multi-node solar battery and its making method |
| US20140137930A1 (en) * | 2012-11-16 | 2014-05-22 | Solar Junction Corporation | Multijunction solar cells |
| CN104091849A (en) * | 2014-07-29 | 2014-10-08 | 天津三安光电有限公司 | Multi-junction solar cell and manufacturing method thereof |
-
2015
- 2015-10-13 CN CN201510669722.0A patent/CN106601856B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060021565A1 (en) * | 2004-07-30 | 2006-02-02 | Aonex Technologies, Inc. | GaInP / GaAs / Si triple junction solar cell enabled by wafer bonding and layer transfer |
| CN101241945A (en) * | 2008-02-04 | 2008-08-13 | 苏州纳米技术与纳米仿生研究所 | Silicon base efficient multi-node solar battery and its making method |
| US20140137930A1 (en) * | 2012-11-16 | 2014-05-22 | Solar Junction Corporation | Multijunction solar cells |
| CN104091849A (en) * | 2014-07-29 | 2014-10-08 | 天津三安光电有限公司 | Multi-junction solar cell and manufacturing method thereof |
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