CN1136218A - 半导体器件制造方法 - Google Patents
半导体器件制造方法 Download PDFInfo
- Publication number
- CN1136218A CN1136218A CN96101296A CN96101296A CN1136218A CN 1136218 A CN1136218 A CN 1136218A CN 96101296 A CN96101296 A CN 96101296A CN 96101296 A CN96101296 A CN 96101296A CN 1136218 A CN1136218 A CN 1136218A
- Authority
- CN
- China
- Prior art keywords
- etching
- platinum film
- film
- semi
- device manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7016829A JP2953974B2 (ja) | 1995-02-03 | 1995-02-03 | 半導体装置の製造方法 |
JP016829/95 | 1995-02-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1136218A true CN1136218A (zh) | 1996-11-20 |
CN1080926C CN1080926C (zh) | 2002-03-13 |
Family
ID=11927088
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN96101296A Expired - Fee Related CN1080926C (zh) | 1995-02-03 | 1996-02-02 | 半导体器件制造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5652171A (zh) |
EP (2) | EP0932192B1 (zh) |
JP (1) | JP2953974B2 (zh) |
KR (1) | KR0185489B1 (zh) |
CN (1) | CN1080926C (zh) |
DE (2) | DE69613723T2 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1294631C (zh) * | 2001-11-28 | 2007-01-10 | 三菱化学株式会社 | 蚀刻液 |
CN100371795C (zh) * | 2004-02-19 | 2008-02-27 | 夏普株式会社 | 导电元件基板、液晶显示装置及其制造方法、电子信息设备 |
WO2013174045A1 (zh) * | 2012-05-25 | 2013-11-28 | 深圳市华星光电技术有限公司 | 取代膜层上氯原子的方法 |
CN110783260A (zh) * | 2018-07-26 | 2020-02-11 | 东京毅力科创株式会社 | 蚀刻方法 |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09251983A (ja) * | 1996-03-15 | 1997-09-22 | Rohm Co Ltd | ドライエッチング方法 |
DE19646208C2 (de) * | 1996-11-08 | 2001-08-30 | Infineon Technologies Ag | Verfahren zur Herstellung eines Kondensators und Speicherfeld |
KR19980060614A (ko) * | 1996-12-31 | 1998-10-07 | 김영환 | 반도체 소자의 제조방법 |
JP3024747B2 (ja) * | 1997-03-05 | 2000-03-21 | 日本電気株式会社 | 半導体メモリの製造方法 |
EP0865079A3 (en) * | 1997-03-13 | 1999-10-20 | Applied Materials, Inc. | A method for removing redeposited veils from etched platinum surfaces |
DE19712540C1 (de) * | 1997-03-25 | 1998-08-13 | Siemens Ag | Herstellverfahren für eine Kondensatorelektrode aus einem Platinmetall |
US5846884A (en) * | 1997-06-20 | 1998-12-08 | Siemens Aktiengesellschaft | Methods for metal etching with reduced sidewall build up during integrated circuit manufacturing |
KR100458293B1 (ko) * | 1997-12-20 | 2005-02-05 | 주식회사 하이닉스반도체 | 반도체소자의금속배선후처리방법 |
US6265318B1 (en) | 1998-01-13 | 2001-07-24 | Applied Materials, Inc. | Iridium etchant methods for anisotropic profile |
KR20010034127A (ko) | 1998-01-13 | 2001-04-25 | 조셉 제이. 스위니 | 이방성 플라티늄 프로화일을 위한 에칭 방법 |
US6919168B2 (en) | 1998-01-13 | 2005-07-19 | Applied Materials, Inc. | Masking methods and etching sequences for patterning electrodes of high density RAM capacitors |
US6323132B1 (en) | 1998-01-13 | 2001-11-27 | Applied Materials, Inc. | Etching methods for anisotropic platinum profile |
KR100333127B1 (ko) * | 1998-06-29 | 2002-09-05 | 주식회사 하이닉스반도체 | 반도체소자의캐패시터제조방법 |
US6323081B1 (en) | 1998-09-03 | 2001-11-27 | Micron Technology, Inc. | Diffusion barrier layers and methods of forming same |
US6204172B1 (en) | 1998-09-03 | 2001-03-20 | Micron Technology, Inc. | Low temperature deposition of barrier layers |
US7060584B1 (en) * | 1999-07-12 | 2006-06-13 | Zilog, Inc. | Process to improve high performance capacitor properties in integrated MOS technology |
US6458648B1 (en) * | 1999-12-17 | 2002-10-01 | Agere Systems Guardian Corp. | Method for in-situ removal of side walls in MOM capacitor formation |
KR100358149B1 (ko) * | 2000-06-30 | 2002-10-25 | 주식회사 하이닉스반도체 | 플라즈마 처리를 이용하여 강유전체 캐패시터의 열화를회복시키는 강유전체 메모리 소자 제조 방법 |
US20020123008A1 (en) | 2000-12-21 | 2002-09-05 | Ning Xiang J. | Isotropic etch to form MIM capacitor top plates |
US6444479B1 (en) * | 2001-04-18 | 2002-09-03 | Hynix Semiconductor Inc. | Method for forming capacitor of semiconductor device |
EP1321977A1 (en) * | 2001-12-17 | 2003-06-25 | AMI Semiconductor Belgium BVBA | Method for reducing residual electric charge created by a previous process step on a conductive structure |
JP2003257942A (ja) * | 2002-02-28 | 2003-09-12 | Fujitsu Ltd | 半導体装置の製造方法 |
JP4865978B2 (ja) * | 2002-02-28 | 2012-02-01 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
US7071117B2 (en) * | 2004-02-27 | 2006-07-04 | Micron Technology, Inc. | Semiconductor devices and methods for depositing a dielectric film |
JP2006313833A (ja) * | 2005-05-09 | 2006-11-16 | Seiko Epson Corp | 強誘電体キャパシタの形成方法、強誘電体キャパシタおよび電子デバイス |
US20060278339A1 (en) * | 2005-06-13 | 2006-12-14 | Lam Research Corporation, A Delaware Corporation | Etch rate uniformity using the independent movement of electrode pieces |
JP2009266952A (ja) * | 2008-04-23 | 2009-11-12 | Seiko Epson Corp | デバイスの製造方法及び製造装置 |
JP2011119779A (ja) * | 2011-03-22 | 2011-06-16 | Seiko Epson Corp | 強誘電体キャパシタの形成方法、強誘電体キャパシタおよび電子デバイス |
US9224592B2 (en) * | 2013-09-12 | 2015-12-29 | Texas Intruments Incorporated | Method of etching ferroelectric capacitor stack |
JP6210039B2 (ja) * | 2014-09-24 | 2017-10-11 | セントラル硝子株式会社 | 付着物の除去方法及びドライエッチング方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4325984B2 (en) * | 1980-07-28 | 1998-03-03 | Fairchild Camera & Inst | Plasma passivation technique for the prevention of post-etch corrosion of plasma-etched aluminum films |
JPS593927A (ja) * | 1982-06-29 | 1984-01-10 | Fujitsu Ltd | 薄膜のエツチング方法 |
JPS59189633A (ja) * | 1983-04-13 | 1984-10-27 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS61160939A (ja) * | 1985-01-09 | 1986-07-21 | Nec Corp | ドライエツチング後Si表面損傷の乾式による除去方法 |
US4666555A (en) * | 1985-08-23 | 1987-05-19 | Intel Corporation | Plasma etching of silicon using fluorinated gas mixtures |
US4847212A (en) * | 1987-01-12 | 1989-07-11 | Itt Gallium Arsenide Technology Center | Self-aligned gate FET process using undercut etch mask |
JPH02151031A (ja) * | 1988-12-02 | 1990-06-11 | Hitachi Ltd | 半導体装置の製造方法 |
JPH03155621A (ja) * | 1989-07-12 | 1991-07-03 | Toshiba Corp | ドライエッチング方法 |
US5316572A (en) * | 1989-12-11 | 1994-05-31 | Nmb Ltd. | Method of manufacturing concrete for placement in air not requiring consolidation |
US5397432A (en) * | 1990-06-27 | 1995-03-14 | Fujitsu Limited | Method for producing semiconductor integrated circuits and apparatus used in such method |
JPH0467636A (ja) * | 1990-07-06 | 1992-03-03 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US5216572A (en) * | 1992-03-19 | 1993-06-01 | Ramtron International Corporation | Structure and method for increasing the dielectric constant of integrated ferroelectric capacitors |
JPH0649667A (ja) * | 1992-07-30 | 1994-02-22 | Sharp Corp | ドライエッチング方法及びその装置 |
US5335138A (en) * | 1993-02-12 | 1994-08-02 | Micron Semiconductor, Inc. | High dielectric constant capacitor and method of manufacture |
JP3460347B2 (ja) * | 1994-03-30 | 2003-10-27 | 松下電器産業株式会社 | 半導体装置の製造方法 |
-
1995
- 1995-02-03 JP JP7016829A patent/JP2953974B2/ja not_active Expired - Fee Related
-
1996
- 1996-01-27 DE DE69613723T patent/DE69613723T2/de not_active Expired - Lifetime
- 1996-01-27 EP EP99106072A patent/EP0932192B1/en not_active Expired - Lifetime
- 1996-01-27 EP EP96101154A patent/EP0725430B1/en not_active Expired - Lifetime
- 1996-01-27 DE DE69628677T patent/DE69628677T2/de not_active Expired - Lifetime
- 1996-01-31 US US08/594,945 patent/US5652171A/en not_active Expired - Lifetime
- 1996-02-02 CN CN96101296A patent/CN1080926C/zh not_active Expired - Fee Related
- 1996-02-02 KR KR1019960002513A patent/KR0185489B1/ko not_active IP Right Cessation
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1294631C (zh) * | 2001-11-28 | 2007-01-10 | 三菱化学株式会社 | 蚀刻液 |
CN100371795C (zh) * | 2004-02-19 | 2008-02-27 | 夏普株式会社 | 导电元件基板、液晶显示装置及其制造方法、电子信息设备 |
WO2013174045A1 (zh) * | 2012-05-25 | 2013-11-28 | 深圳市华星光电技术有限公司 | 取代膜层上氯原子的方法 |
CN110783260A (zh) * | 2018-07-26 | 2020-02-11 | 东京毅力科创株式会社 | 蚀刻方法 |
CN110783260B (zh) * | 2018-07-26 | 2023-07-14 | 东京毅力科创株式会社 | 蚀刻方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1080926C (zh) | 2002-03-13 |
JPH08213364A (ja) | 1996-08-20 |
EP0932192B1 (en) | 2003-06-11 |
JP2953974B2 (ja) | 1999-09-27 |
EP0725430A3 (en) | 1998-05-27 |
DE69628677D1 (de) | 2003-07-17 |
US5652171A (en) | 1997-07-29 |
DE69613723T2 (de) | 2002-04-25 |
EP0725430A2 (en) | 1996-08-07 |
KR0185489B1 (ko) | 1999-04-15 |
DE69613723D1 (de) | 2001-08-16 |
EP0725430B1 (en) | 2001-07-11 |
DE69628677T2 (de) | 2004-05-13 |
EP0932192A1 (en) | 1999-07-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C53 | Correction of patent for invention or patent application | ||
CB02 | Change of applicant information |
Applicant after: Matsushita Electronics Corp. Applicant before: Matsushita Electric Industrial Co., Ltd. |
|
COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: PANASONIC ELECTRIC EQUIPMENT INDUSTRIAL CO.,LTD. TO: MATSUSHITA ELECTRONICS CORP. |
|
ASS | Succession or assignment of patent right |
Owner name: PANASONIC ELECTRIC EQUIPMENT INDUSTRIAL CO.,LTD. Free format text: FORMER OWNER: MATSUSHITA ELECTRONICS CORP. Effective date: 20010712 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20010712 Applicant after: Matsushita Electric Industrial Co., Ltd. Applicant before: Matsushita Electronics Corp. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20020313 Termination date: 20130202 |