CN1153081C - 光调制器的形成方法和制造方法以及光调制器 - Google Patents
光调制器的形成方法和制造方法以及光调制器 Download PDFInfo
- Publication number
- CN1153081C CN1153081C CNB961945753A CN96194575A CN1153081C CN 1153081 C CN1153081 C CN 1153081C CN B961945753 A CNB961945753 A CN B961945753A CN 96194575 A CN96194575 A CN 96194575A CN 1153081 C CN1153081 C CN 1153081C
- Authority
- CN
- China
- Prior art keywords
- layer
- substrate
- conductive layer
- band
- depletion layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1828—Diffraction gratings having means for producing variable diffraction
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0808—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more diffracting elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S359/00—Optical: systems and elements
- Y10S359/904—Micromirror
Abstract
用于光调制的可变形光栅装置,其制作步骤有:在基片(400)上形成绝缘层(402),在绝缘层(402)上形成第一导电层(406),然后在其上形成损耗层。然后刻蚀损耗层和第一导电层,以定义至焊盘(306,312,316)的总线和比特线。然后将一层弹性材料(410)覆盖在刻蚀层上,且在弹性层上形成反射导电层(414)。在反射导电层(414)上淀积介质层(416)。然后对所有的介质层(416)、反射导电层(414)、弹性层(410)以及损耗层刻蚀,以形成包括多个平行部件(304)在内的光栅。此后损耗层从平行部件下除去,以使平行部件(304)悬浮于第一导电层上。处理该表面,以避免光栅粘附于第一导电层。光调制器包括具有绝缘层的基片以及绝缘层上形成的多个平行导电层。带(304)与导电层(300,302)之间由气室隔开,且带安装于基片、导电层之间的间隙内。
Description
技术领域
本发明涉及光束调制领域。更具体地说,本发明是用于一种基本上为平面的衍射光栅光阀及其制造工艺以及光调制器。
背景技术
对于例如通过改变光的幅值、频率或相位来调制光束的装置,有着许多应用。这种装置的一个例子是图1所示的可变形反射光栅光调制器10。该调制器10包括多个均匀隔开、可变形反射带18,这些反射带18悬浮于反射基片16上。该调制器由Bloom等人在美国专利5311360中提出,该专利在此引以为参考。带18放置在氧化物隔离层12上的氮化物框架20上。为调制具有单一波长λ0的光,如此设计调制器,使得带的厚度和氧化物隔离层的厚度均等于λ0/4。
该调制器的光栅幅值被定义为带18层上的反射表面和基片16的反射表面之间的垂直距离d,它可以用电子方法加以控制。在其未变形状态,带18与基片16之间未加电压,光栅幅值等于λ0/2,带和基片反射的光之间的总光程差等于λ0,导致这些反射同相相加,而调制器如同平的镜面一样反射光。当带18和基片16之间加有适当的电压,静电引力将带18下拉到基片16的平面上,而光栅幅值改变为λ0/4。总的光程差为半个波长,导致从变形带18表面的反射和基片16的反射相消干涉。这种干涉的结果是,调制器使光衍射。
Bloom等人的专利′360中描述的这种光栅光调制器可以用于产生显示图象的结构。可以由这样的一个调制器用最少一对相邻光栅部件形成一个象素。当显示器采用一个仅检测衍射光的光学系统时,如果未向该带施加电压且带仍处于上位置,那么该象素为黑或关状态,如果电压加到带上且该带被下拉至基片上,那么该象素被点亮或开。设计显示系统的一个非常重要的因素是黑象素和亮象素之间的反差比。给出较大反差比的最佳办法是确保黑象素没有光。
Bloom等人的专利′360中提出了一种形成调制器10的方法。参照图1,硅基片16上淀积了一个绝缘层11。在此之后淀积一层具有损耗(sacrificial)的二氧化硅薄膜12和一层低应力氮化硅薄膜14,两者均为213nm厚。由于这些厚度确定了调制器的光栅幅值,因此它们的尺寸很重要。这些厚度的变化在关状态会产生不需要的光衍射,从而降低了反差比。
然后对氮化硅膜14进行光刻构图并刻蚀成细长部件18形式的光栅部件的栅格。在光刻构图过程之后,在硅基片16的上表面的整个周边还留有外围氮化硅框架。然后,损耗的二氧化硅膜12在氢氟酸液中酸洗。酸洗的结果是完全除去了二氧化硅膜12,由此产生多个213nm厚的氮化硅带,它们在该框架内伸展并悬浮于硅基片16上方213nm(这是酸洗掉的损耗膜的厚度)距离处。
进一步可以看出,在框架20下方二氧化硅层12并未完全被蚀去。这样,框架20即是由该剩余的二氧化硅12膜支撑于硅基片16上方213nm距离处。这需要时间相关地仔细控制酸洗过程,以确保框架20下留有二氧化硅层12。接着,50nm厚的铝膜溅射到带18和基片16上。该铝膜提高了带18和基片16的反射率,提供了用于在带18和基片16之间施加电压的第一电极。将同样厚度的铝膜溅射到硅基片16的基底上,形成第二电极。
在最终的湿处理步骤和操作过程中带18和基片16之间的粘附是这些装置中已发现的一个问题。导致该粘附的力是这两个表面之间的接触面积和粘附单位力(specific-force)(即每单位接触面积的力)的函数。有关粘附的减少问题已经提出了许多解决方法,包括:升华干燥,损耗性的光刻胶-丙酮层的干蚀刻,OTS单层处理,通过使用较短的带和/或较紧的硅化物膜来使用较为刚性的带,使这些表面之一或一些变糙或起皱,在带的下底上形成倒相轨(inverted rail),以及改变这些表面的化学性质。位于Hilton Head Island,SC的Solid State Sensors and Actuators Workshop工作室的Sandejas等人在“高清晰度显示器用的可变形光栅光阀的表面微制造”中、Apte等人在“高清晰度显示器周的光栅光阀”已经指出,这样的粘附可以分别通过在桥的下底形成倒相轨进而减少接触面积以及通过使用粗糙的多晶硅膜,加以避免。当前,优选的方法是将一或两个表面糙化。但是,由于调制器10的基片用作为光表面,由于下列条件使得表面糙化的制造过程复杂化:基片16的反射部分应当光滑,反射率高,应当在与带18平行的一个平面内,而基片在带18下方的部分应当粗糙。
Bloom等人在′360专利中提出不使用基片作为反射表面的调制器的其它实施例,但未披露其制造方法。一种调制器30示意于图2中,它包括固定带38,还交替地包括可移动带34。使固定带38与可移动带34共面,由此展示一个基本平的上表面,当无偏压施加时调制器如同平的镜面一样将入射光反射。当加有偏压时,可移动带34向下运动,调制器将光衍射。但是,该装置似乎难于制造,而且其性能与调制器10一样对带和固定部件下的氧化物隔离器的厚度非常敏感。
此外,包括调制器10(图1)和30(图2)的显示器的反差比和强度还对由加工引起的光栅结构的偶然(inadvertent)周期性敏感。例如,在加工调制器30的过程中,支撑固定带的氧化物隔离器可能发生膨胀。这样的膨胀可能导致固定带和可移动带在关状态下不再共面,使得光被衍射而不是反射。
此外,由于所加电压和噪声的影响,这些调制器的反差比易于降低。在第一种情况,向基片和待下移的特定带所施加的电压将会为其它的保持上状态(象素关)的带感觉到,这些带会弯曲,使部分入射光衍射,因此这些象素将部分地为开与亮,而不是关和黑,导致反差比降低。同样地,带而不是固定部件将响应噪声而弯曲。这使得反差比下降,原因如下:a)在调制器10中光栅幅值(相邻光栅部件的反射表面之间的距离)的变化,以及b)调制器30中带和固定部件不再共面。
总之,使用现有技术方法制成的调制器的性能有,但不限于下列缺点:由于各带、损耗层以及残留氧化物隔离器的厚度尺寸限定了光栅的幅值,因此其性能对处理过程的公差非常敏感;反差比仅对单个波长是最优的;黑状态因而是反差比高度依赖于波长;在松弛状态下带在基片上方的高度,不能在经过加工处理之后为了调谐到其它波长而加以调节,或针对制造误差而加以调节;该优选方法为了避免粘附,使两个表面均糙化,降低了基片光栅部件的反射率;以及由于所加电压和噪声的影响反差比有所降低。
发明内容
现在本发明的目的是提供这样的平面衍射光栅光阀,它具有如下特征:黑状态与波长无关,对于白光操作反差比较高,光栅幅值可以调节以优化性能,自偏压,对噪声的共模抑制,制造容易且成本可行,不受处理公差的影响。
本发明的另一个目的是提供一种制造如此光阀和平面衍射光栅系统的方法,所述系统具有如下特征:简单的制造过程,高产出,自限制损耗层刻蚀,自支撑调制器部件(无框架),简化除粘附过程。另外,基片制造问题(用于减少粘附和传导的糙化)与光学问题(反射率和平度)分离。
根据本发明,提供了一种形成光调制器的方法,所述光调制器位于基片所述基片具有导电层,所述方法包括下列步骤:a.在该基片上形成损耗层,使得基片在被所述损耗层隔开的至少两个地方被露出;b.在该损耗层上形成至少两个分离的带结构,并将其在所述两个地方与基片耦合,每个带结构具有一个反射表面;以及c.选择地除去损耗层,由此所述带结构与基片之间隔开一定空间。
本发明还提供了一种形成光调制器的方法,该光调制器位于基片上,所述基片具有导电层,所述方法包括下列步骤:a.在该基片上形成损耗层;b.形成一个粘连到基片的反射结构;c.有选择地除去所述反射结构的部分,以提供多个带,使得每个带可以相对于其相邻邻居有选择地运动;以及d.选择地除去所述损耗层,由此带与基片之间隔有一定空间。
在所述方法中,所述基片包括一个绝缘层。其中损耗层是淀积形成的。损耗层可以是一个有选择刻蚀的材料。例如损耗层是磷硅酸盐玻璃。
本发明有提供了一种用于光调制的光调制器的制造方法,包括下列步骤:a.提供一个基片;b.在所述基片上形成一个绝缘层;c.在所述绝缘层形成第一导电层;d.在所述第一导电层上形成损耗层;e.刻蚀所述损耗层和所述第一导电层,以限定至焊盘的总线和位线,从而形成刻蚀后的各层;f.将一层弹性材料覆盖于所述刻蚀后的层上;g.在所述弹性材料层上形成反射导电层;h.刻蚀所述反射导电层、弹性层、以及损耗层,以形成包括多个平行部件的一个光栅;以及i.除去所述平行部件下的所述损耗层,由此将所述平行部件悬浮于所述第一导电层上。
所述的制造方法还包括当所述光栅向所述第一导电层运动时防止该光栅粘附到该第一导电层上的步骤,其中所述防止光栅粘附到第一导电层上的步骤是通过在所述光栅和所述第一导电层之间提供一个处理过的表面来完成的。
所述的制造方法还包括在所述反射导电层上淀积一个介质层的步骤。
所述的制造方法还包括将一个盖安装到所述基片上使得焊盘被暴露出来并且所述带在所述盖下的步骤。
本发明的另一个方面,提供了一种光调制器,包括:a.一个基片;b.在所述基片上的一个绝缘层;c.在所述基片上的多个导电线;d.在所述导电线上方形成且通过一个气室与这些导电线隔开的至少两个相邻的带,其中每个带包括一个同样也是导电层的反射层,使得相邻带包括相邻的反射层;以及e.非旋转地使相邻带彼此相对运动以形成衍射光栅的装置。
本发明还提供了一种光调制器,包括:a.一个基片;b.在所述基片上的一个绝缘层;c.在所述绝缘层上形成的多个平行导电层,使得相邻的所述导电层通过一个间隙隔开;以及d.基本上垂直于所述导电层取向的多个连续平行反射带,使得所述带通过一个气室与所述导电层隔开并且在所述导电层之间的所述间隙内安装到基片上。优选地,其中所述带从所述基片基本上垂直地向上延伸,并在所述导电层上方弯曲成弧形。
附图说明
图1是该现有技术方法形成的调制器的剖面图。
图2是该现有技术建议的调制器的剖面图。
图3-26是说明本发明工艺顺序的一个半导体晶片的剖面图。
具体实施方式
图3示意了根据本发明的方法制造的两个象素部件的平面图。该平面图代表了本优选实施例。对于本领域的技术人员来说一目了然的是,可以作出简单的修改,而该修改仍属于本发明的精神范围之内。例如,对于一个象素,可以采用数目不同的带。另外,应当明白的是,对于许多类型的显示装置,可以在许多行和列中使用许多个象素。在这样的系统中,焊盘区基本上可以从象素所在地除去。
一个连续导电层300位于多个带下面。在该优选实施例中,单个导电层上的四个带构成一个简单的象素。第二导电层302与第一导电层300相邻,它限定了第二象素。在常规显示装置中,各导电层用于表示显示器的各列。导电层300和302的每个分别连接用于从焊盘310和312接收适当的电压。
每个象素包括四个反射带,两个带304电相连,用于接收偏压。在该优选实施例中,用于带304的偏压被加至焊盘306。焊盘306电连接至导电层308,该导电层308和在象素区内的导电层300以及302同时形成。导电层308通过一个接触通孔320和带304电相连。另两个带314电相连,用于接收偏压。在该优选实施例中,用于带314的偏压施加于焊盘316。焊盘316电连接至导电层318,该导电层318和在象素内区的导电层300以及302同时形成。导电层318通过一个接触通孔330和带314电相连。
实施该发明的一个应用是一个二维可寻址光栅光阀显示器,该显示器包括一个反射可变形光栅光调制器,具有一个光栅光调制器,其光栅幅值可以用电方法加以控制,包括一个其上自由悬浮有一个可变形光栅的基片。平面式衍射光栅光阀结构和制造方法形成了一种平面衍射光栅的制造装置,该衍射光栅所具有的象素在空间上是坚固的(由自限制损耗层刻蚀所形成的自支撑可变形带),它们自由地悬浮于下方电极线上,而不会发生刻蚀后的粘附现象(纹理化的下方电极),而且可以由上(字线)和下(位线)数据线进行二维寻址。
本发明的工艺过程逐步地表示于图4-26中。这些图表示了依据本发明处理的晶片的剖面图,且示意的是经过该处理过程的每一关键步骤之后的情况。处理区域在图3中用虚线A-A′和B-B′表示。相同的部件在随后的步骤中用相同数字表示。例如由于蚀刻而有所改变的部件,其表示方式是同样的数字之后加以字母后缀。光栅光阀显示器的制造方法包括一些关键处理过程和材料,它们合成为一个独特的体系结构。这里仅仅披露了该优选实施例的材料以及某些有代表性的材料,但无意于作任何限制。
如图4所示,第一步是在硅基片400上形成绝缘层。在优选实施例中,该绝缘层是一个复合材料层,其形成过程如下:将硅晶片加热氧化,形成场(field)氧化物层402。一层氮化硅404形成于场氧化物402之上。所生长的氧化物的厚度条件由基片电容和有关寄生因素对象素寻址的影响来限定。氮化物层起两个作用:1)使在象素之间的间隙内的氮化物带的接口优化;并且2)蚀刻终止层,防止在损耗层蚀刻过程中在象素之间的间隔内带被从底部切去。
在边缘部分,对氮化物层404和场氧化物层402进行构图并蚀刻,以形成修改后的层402A和404A,如图5所示。但是,这些层在装置的象素区域保持完整,仍然用各自原有的标号表示。
在下一步,如图6所示,在氮化物层404上方形成第一导电层406,它通常是高熔点金属。该第一导电层406用作为带光栅的下端电极。它也用作为至位于芯片封装外的焊盘的总线层,该总线层通过一个通孔与带光栅的上端电极相连。第一导电层406定位于光栅带(还未形成)和基片400之间。导电材料的指标是:1)高温适应能力(大于或等于800℃);2)低电阻率,使得在最小厚度(≤1000埃,以保持平面性)时薄层电阻可以≤lohms/sq;3)不受基于氢氟酸的湿蚀刻剂(用于损耗层蚀刻的蚀刻剂)的影响。高熔点金属,例如钨(W)、钼(Mo)、和钽(Ta)以及高熔点混合物如钛-钨(重量百分比可达20%的Ti)能满足这些要求。在该优选实施例中,该金属是钨。
为了避免光栅部件和该导电层之间发生粘附,应当对导电层406的上表面和/或带层的下表面进行处理。方法之一是用数个装置的任一个赋予导电层406以一定的表面纹理或粗糙度。一种情况下,将W在含有SF6的等离子体气体中进行干蚀刻将会引入粗糙度。类似地,用氩气的溅射腐蚀也会引入一定的粗糙度。同样,通过例如氧等离子体或者在500和1000℃之间的温度下的熔炉退火使W表面的部分氧化,也会带来一定的表面纹理。
接着,在导电层406上方形成一个损耗层408。通常,任何可以相对于导电层406和带层(未形成)有选择地刻蚀的损耗层408均可以使用。最为常见的是使用一层掺杂玻璃,例如硼-磷硅酸盐(boro-phospho-silicate)玻璃(BPSG)或磷硅酸盐(phospho-silicate)玻璃(PSG)。在该优选实施例中,损耗层408采用的是PSG。厚度和公差分别由象素调制所需要的静电引力和反差比确定。对于这一层的要求是:1)相对于叠加的氮化硅带和下埋的高熔点金属(在损耗层蚀刻期间两者均被暴露)有着非常高的湿蚀刻选择性(~500∶1)以及;2)在~1200℃可以流动至≤45角度,以推进第一导电层的平面化。通过高度掺磷,使蚀刻选择性和可流动性都得到提高。
然后使用易于得到的技术对导电层406和损耗层408光刻掩模,继而循序地用适当的干或湿蚀刻化学方法对这两层蚀刻,使得该双层堆在一个单掩模步骤中即具有常见的几何结构。由这一组处理步骤形成的外形示于图8。
在该优选实施例中,所定义的PSG/W对须经过高温熔炉的处理,使得PSG发生流动,因此该PSG/W双层结构的侧壁的顶角处形成尖锥或削边的外形。该外形有助于改进后继的氮化硅和铝层的侧壁覆盖,并且通过使待形成的氮化硅中的弯曲力矩引起的应力分散而赋予其机械稳定性。
在损耗层被淀积之后使下端电极表面纹理化的一种方法是,在微观尺度上有选择地生长不均匀的氧化物。这通过在高温退火步骤中对W进行掺杂剂有所改进的氧化来完成,所述高温退火步骤可以选择在双层结构构图之前或之后进行。如果退火是在构图之后实施的,那么表面纹理化和损耗层的尖削也可以伴生完成。
接着,在损耗层408B上形成一层弹性材料410,如图9所示。弹性材料410的优选材料是氮化硅,其淀积厚度和残余应力大小由在施加足够相反极性偏压以消除使光阀到达下状态的切换偏压所引起的静电力之后使光阀返回上状态而需要的弹簧力限定。氮化硅可以通过低压化学汽相淀积(LPCVD)方法淀积,也可以采用等离子体增强化学汽相淀积方法(PECVD)。现在该分层结构的构造是,PSG在三面(顶和侧面)由氮化硅且在底部由W约束。而W的侧壁也由氮化硅约束。所以,PSG/W对在两个尺度上完全为氮化硅所约束。这很重要,主要原因有二:1)损耗层刻蚀(定义的氮化硅带的底切),其中损耗层的蚀刻是各向同性的,由于PSG和氮化硅之间选择性非常高的缘故受到自控制结束点的自我限制,并且2)氮化硅的侧壁被W层的侧面加强,它通过限制带的垂直分量中的侧向弯曲力矩而赋予氮化硅光阀以机械稳定性。
在各带和焊盘之间的连接通过第一导电层406所形成的总线完成。定义焊盘和通孔面积的孔,是通过在象素区域外、装置的外围区域内的弹性材料410A和损耗层408A来形成的。导电层406通过这些孔暴露出来。
然后,在该结构上形成铝层412,如图11所示,用作为焊盘并且填充接触通孔。在优选实施例中,该铝层淀积厚度≤5000埃,这样在焊盘和通孔中获得最大的侧壁覆盖。常规方法包括溅射腐蚀,以便在铝溅射淀积之前在氮化物顶角处形成一个坡度,铝的热溅射淀积,例如在300℃,偏压基片的溅射淀积和/或其任意组合。
然后对铝层412构图并蚀刻,使得它仅残留于焊盘和通孔区域,如图12所示。众所周知,在焊盘周围留有足够的重叠,以避免形成空洞。在重叠的外边缘处蚀刻金属的侧壁坡度,在确保最大的台阶式覆盖并因而在随后淀积的带光栅的上铝薄电极的连续性方面,起着非常重要的作用。铝层412内的倾斜蚀刻外形是采用受控湿蚀刻处理方法而形成的。
在优选实施例中,导电层406A埋置于PSG和氮化硅带下面以及在总线层上方从焊盘的内边缘到光栅阵列的外边缘的限定区域。该钝化区域如图所示位于焊盘306和通孔320之间。在该钝化区域安装有一个玻璃盖430,以密封性地使装置的象素区与周围环境分离。焊盘位于该盖所构成的密封件之外,如图25所示。仅仅通孔和象素区域被盖盖住。在该处理过程的这一最后步骤结束之后,盖被装到该装置上。
接下来,如图13和14所示,铝薄层414淀积在该装置之上。该层414使象素带(待形成)的反射提高。铝层414的淀积厚度≤1000埃。
二氧化硅介质薄层416形成于铝薄层414上,其图示对于象素区域见图15,对于边缘见图16和17。介质层厚度≤500埃。在该边缘区域对介质层416和铝薄层414构图并蚀刻,如图16和17所示。介质层416A从焊盘除去,如图18所示,以提供可以焊接的导电表面。介质薄层416有两个主要功能。第一,在后继的处理步骤,例如剥离光刻胶期间它为铝薄层414提供了一个保护层。第二,它有助于抑制在该光调制器操作过程中铝薄层414的电迁移和机械应变。
接着,对象素区域进行调节,以形成衍射光栅带。应当注意,接下来的一系列剖面所取方向与此前的方向垂直。为形成这些带,有两种可能的处理方法。第一个这样的处理过程示于图19至21。在图19,穿过光刻胶层418形成一个开口。使用该光刻胶层418作为掩模,对介质薄层416、铝薄层414、弹性层410和损耗层408进行刻蚀,如图20所示。图21表明,损耗层被完全除去。带结构包括介质薄层416、铝薄层414和弹性层410。从该剖面的角度来看,带结构似乎浮在空气中。事实上,带结构以其端部悬浮于导电层406上方的气隙420上,这将从图26可以看出。
限定带的第二种处理方法示意于图22至24。在图22,在光刻胶层422内形成一个开口,光刻胶层继而被作为刻蚀掩模,以移去介质薄层416B和铝薄层414B的某些部分。光刻胶层422被除去,并且覆盖上第二个光刻胶层424且掩模。光刻胶层424用作为层410C和408C的刻蚀掩模。在掩模步骤中损耗层408C不必完全除去,这是因为接下来整个损耗层408将被除去。如同在上面所述处理过程一样,带悬浮于导电层406上。
不论哪一种处理过程,其最后一步是,将盖430安装于象素区和通孔上方。盖在通孔和焊盘之间的区域中与装置的结构接触,使得焊盘在该封装盖之外,如图25所示。
图26是两个完整带的剖面图,它示意了带的长度和将带安装到基片上的结构。
上文参照一个优选实施例对本发明进行了描述。那些只有在阅读了本公开文件之后对于本领域的普通技术人员来说才变得一目了然的改进或修改,仍然在本发明的精神和范围之内。
Claims (17)
1.一种形成光调制器的方法,所述光调制器位于基片(400、420)所述基片具有导电层(406),所述方法包括下列步骤:
a.在该基片上形成损耗层(408),使得基片在被所述损耗层隔开的至少两个地方被露出;
b.在该损耗层上形成至少两个分离的带结构(304,314),并将其在所述两个地方与基片耦合,每个带结构具有一个反射表面(414);和
c.选择地除去损耗层,由此所述带结构与基片之间隔开一定空间。
2.根据权利要求1所述的方法,其中所述基片包括一个绝缘层(404)。
3.根据权利要求2所述的方法,其中损耗层是淀积形成的。
4.根据权利要求2所述的方法,其中损耗层是一个有选择刻蚀的材料。
5.根据权利要求2所述的方法,其中损耗层是磷硅酸盐玻璃。
6.一种形成光调制器的方法,该光调制器位于基片(400,402)上,所述基片具有导电层(406),所述方法包括下列步骤:
a.在该基片上形成损耗层(408);
b.形成一个粘连到基片的反射结构(410,414);
c.有选择地除去所述反射结构的部分,以提供多个带(304,314),使得每个带可以相对于其相邻邻居有选择地运动;以及
d.选择地除去所述损耗层,由此带与基片之间隔有一定空间。
7.根据权利要求6所述的方法,其中基片包括一个绝缘层(404)。
8.根据权利要求7所述的方法,其中损耗层是淀积形成的。
9.根据权利要求7所述的方法,其中损耗层是一个有选择刻蚀的材料。
10.根据权利要求7所述的方法,其中损耗层是磷硅酸盐玻璃。
11.一种用于光调制的光调制器的制造方法,包括下列步骤:
a.提供一个基片(400,402);
b.在所述基片上形成一个绝缘层(404);
c.在所述绝缘层形成第一导电层(406);
d.在所述第一导电层上形成损耗层(408);
e.刻蚀所述损耗层和所述第一导电层,以限定至焊盘(306,310,312,316)的总线和位线,从而形成刻蚀后的各层;
f.将一层弹性材料(410)覆盖于所述刻蚀后的层上;
g.在所述弹性材料层上形成反射导电层(414);
h.刻蚀所述反射导电层、弹性层、以及损耗层(304,314),以形成包括多个平行部件的一个光栅;以及
i.除去所述平行部件下的所述损耗层,由此将所述平行部件悬浮于所述第一导电层上。
12.根据权利要求11所述的制造方法,还包括当所述光栅向所述第一导电层运动时防止该光栅粘附到该第一导电层上的步骤,其中所述防止光栅粘附到第一导电层上的步骤是通过在所述光栅和所述第一导电层之间提供一个处理过的表面来完成的。
13.根据权利要求11所述的制造方法,还包括在所述反射导电层上淀积一个介质层(416)的步骤。
14.根据权利要求11所述的制造方法,还包括将一个盖安装到所述基片上使得焊盘被暴露出来并且所述带在所述盖下的步骤。
15.一种光调制器,包括:
a.一个基片(400,402);
b.在所述基片上的一个绝缘层(404);
c.在所述基片上的多个导电线(300,302);
d.在所述导电线上方形成且通过一个气室与这些导电线隔开的至少两个相邻的带(304,314),其中每个带包括一个同样也是导电层的反射层,使得相邻带包括相邻的反射层;以及
e.非旋转地使相邻带彼此相对运动以形成衍射光栅的装置。
16.一种光调制器,包括:
a.一个基片(400,402);
b.在所述基片上的一个绝缘层(404);
c.在所述绝缘层上形成的多个平行导电层(300,302),使得相邻的所述导电层通过一个间隙隔开;以及
d.基本上垂直于所述导电层取向的多个连续平行反射带(304,314),使得所述带通过一个气室与所述导电层隔开并且在所述导电层之间的所述间隙内安装到基片上。
17.根据权利要求16所述的光调制器,其中所述带从所述基片基本上垂直地向上延伸,并在所述导电层上方弯曲成弧形。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/480,459 US5661592A (en) | 1995-06-07 | 1995-06-07 | Method of making and an apparatus for a flat diffraction grating light valve |
US08/480,459 | 1995-06-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1187249A CN1187249A (zh) | 1998-07-08 |
CN1153081C true CN1153081C (zh) | 2004-06-09 |
Family
ID=23908065
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB961945753A Expired - Lifetime CN1153081C (zh) | 1995-06-07 | 1996-06-05 | 光调制器的形成方法和制造方法以及光调制器 |
Country Status (10)
Country | Link |
---|---|
US (1) | US5661592A (zh) |
EP (1) | EP0830629B1 (zh) |
JP (1) | JP3016871B2 (zh) |
KR (1) | KR100306085B1 (zh) |
CN (1) | CN1153081C (zh) |
AT (1) | ATE183590T1 (zh) |
AU (1) | AU6156496A (zh) |
DE (1) | DE69603857T2 (zh) |
NO (1) | NO975695D0 (zh) |
WO (1) | WO1996041226A1 (zh) |
Families Citing this family (196)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6219015B1 (en) | 1992-04-28 | 2001-04-17 | The Board Of Directors Of The Leland Stanford, Junior University | Method and apparatus for using an array of grating light valves to produce multicolor optical images |
US6674562B1 (en) | 1994-05-05 | 2004-01-06 | Iridigm Display Corporation | Interferometric modulation of radiation |
US7808694B2 (en) * | 1994-05-05 | 2010-10-05 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
US7852545B2 (en) | 1994-05-05 | 2010-12-14 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
US7460291B2 (en) * | 1994-05-05 | 2008-12-02 | Idc, Llc | Separable modulator |
US7830588B2 (en) | 1996-12-19 | 2010-11-09 | Qualcomm Mems Technologies, Inc. | Method of making a light modulating display device and associated transistor circuitry and structures thereof |
US6177980B1 (en) * | 1997-02-20 | 2001-01-23 | Kenneth C. Johnson | High-throughput, maskless lithography system |
US6137623A (en) * | 1998-03-17 | 2000-10-24 | Mcnc | Modulatable reflectors and methods for using same |
KR100703140B1 (ko) | 1998-04-08 | 2007-04-05 | 이리다임 디스플레이 코포레이션 | 간섭 변조기 및 그 제조 방법 |
US8928967B2 (en) | 1998-04-08 | 2015-01-06 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
US6147789A (en) * | 1998-05-04 | 2000-11-14 | Gelbart; Daniel | High speed deformable mirror light valve |
US5953161A (en) * | 1998-05-29 | 1999-09-14 | General Motors Corporation | Infra-red imaging system using a diffraction grating array |
US5933277A (en) * | 1998-05-29 | 1999-08-03 | General Motors Corporation | Imaging system combining visible and non-visible electromagnetic radiation for enhanced vision |
US6303986B1 (en) | 1998-07-29 | 2001-10-16 | Silicon Light Machines | Method of and apparatus for sealing an hermetic lid to a semiconductor die |
US6243194B1 (en) | 1998-12-18 | 2001-06-05 | Eastman Kodak Company | Electro-mechanical grating device |
US6252697B1 (en) | 1998-12-18 | 2001-06-26 | Eastman Kodak Company | Mechanical grating device |
US6181458B1 (en) | 1998-12-18 | 2001-01-30 | Eastman Kodak Company | Mechanical grating device with optical coating and method of making mechanical grating device with optical coating |
US6238581B1 (en) * | 1998-12-18 | 2001-05-29 | Eastman Kodak Company | Process for manufacturing an electro-mechanical grating device |
US6188519B1 (en) | 1999-01-05 | 2001-02-13 | Kenneth Carlisle Johnson | Bigrating light valve |
US6724125B2 (en) | 1999-03-30 | 2004-04-20 | Massachusetts Institute Of Technology | Methods and apparatus for diffractive optical processing using an actuatable structure |
US6329738B1 (en) | 1999-03-30 | 2001-12-11 | Massachusetts Institute Of Technology | Precision electrostatic actuation and positioning |
US6236491B1 (en) | 1999-05-27 | 2001-05-22 | Mcnc | Micromachined electrostatic actuator with air gap |
US6268948B1 (en) * | 1999-06-11 | 2001-07-31 | Creo Products Inc. | Micromachined reflective light valve |
US6057520A (en) * | 1999-06-30 | 2000-05-02 | Mcnc | Arc resistant high voltage micromachined electrostatic switch |
US6229683B1 (en) | 1999-06-30 | 2001-05-08 | Mcnc | High voltage micromachined electrostatic switch |
US6501600B1 (en) | 1999-08-11 | 2002-12-31 | Lightconnect, Inc. | Polarization independent grating modulator |
US6826330B1 (en) | 1999-08-11 | 2004-11-30 | Lightconnect, Inc. | Dynamic spectral shaping for fiber-optic application |
US6674563B2 (en) | 2000-04-13 | 2004-01-06 | Lightconnect, Inc. | Method and apparatus for device linearization |
US6275320B1 (en) | 1999-09-27 | 2001-08-14 | Jds Uniphase, Inc. | MEMS variable optical attenuator |
WO2003007049A1 (en) * | 1999-10-05 | 2003-01-23 | Iridigm Display Corporation | Photonic mems and structures |
US6373682B1 (en) | 1999-12-15 | 2002-04-16 | Mcnc | Electrostatically controlled variable capacitor |
US6307663B1 (en) | 2000-01-26 | 2001-10-23 | Eastman Kodak Company | Spatial light modulator with conformal grating device |
US6663790B2 (en) * | 2000-01-26 | 2003-12-16 | Eastman Kodak Company | Method for manufacturing a mechanical conformal grating device with improved contrast and lifetime |
US6407851B1 (en) | 2000-08-01 | 2002-06-18 | Mohammed N. Islam | Micromechanical optical switch |
US6479811B1 (en) | 2000-03-06 | 2002-11-12 | Eastman Kodak Company | Method and system for calibrating a diffractive grating modulator |
US6888983B2 (en) | 2000-04-14 | 2005-05-03 | Lightconnect, Inc. | Dynamic gain and channel equalizers |
CA2352729A1 (en) | 2000-07-13 | 2002-01-13 | Creoscitex Corporation Ltd. | Blazed micro-mechanical light modulator and array thereof |
US6795605B1 (en) * | 2000-08-01 | 2004-09-21 | Cheetah Omni, Llc | Micromechanical optical switch |
US7003187B2 (en) | 2000-08-07 | 2006-02-21 | Rosemount Inc. | Optical switch with moveable holographic optical element |
US6810176B2 (en) | 2000-08-07 | 2004-10-26 | Rosemount Inc. | Integrated transparent substrate and diffractive optical element |
US6485273B1 (en) | 2000-09-01 | 2002-11-26 | Mcnc | Distributed MEMS electrostatic pumping devices |
US6590267B1 (en) | 2000-09-14 | 2003-07-08 | Mcnc | Microelectromechanical flexible membrane electrostatic valve device and related fabrication methods |
US6466354B1 (en) | 2000-09-19 | 2002-10-15 | Silicon Light Machines | Method and apparatus for interferometric modulation of light |
US6411425B1 (en) | 2000-09-27 | 2002-06-25 | Eastman Kodak Company | Electromechanical grating display system with spatially separated light beams |
US6377438B1 (en) | 2000-10-23 | 2002-04-23 | Mcnc | Hybrid microelectromechanical system tunable capacitor and associated fabrication methods |
US6396620B1 (en) | 2000-10-30 | 2002-05-28 | Mcnc | Electrostatically actuated electromagnetic radiation shutter |
US6476848B2 (en) | 2000-12-21 | 2002-11-05 | Eastman Kodak Company | Electromechanical grating display system with segmented waveplate |
US6493488B1 (en) | 2000-12-22 | 2002-12-10 | Celeste Optics, Inc. | Apparatus and method for high speed optical signal processing |
US6721475B1 (en) | 2000-12-22 | 2004-04-13 | Cheetah Omni, Llc | Apparatus and method for providing gain equalization |
US7116862B1 (en) | 2000-12-22 | 2006-10-03 | Cheetah Omni, Llc | Apparatus and method for providing gain equalization |
US6856459B1 (en) * | 2000-12-22 | 2005-02-15 | Cheetah Omni, Llc | Apparatus and method for controlling polarization of an optical signal |
US7136588B1 (en) | 2000-12-22 | 2006-11-14 | Cheetah Omni, Llc | Apparatus and method for optical add/drop multiplexing |
US6384959B1 (en) | 2001-01-09 | 2002-05-07 | Eastman Kodak Company | Optical data modulation system with self-damped electromechanical conformal grating |
US6947195B2 (en) | 2001-01-18 | 2005-09-20 | Ricoh Company, Ltd. | Optical modulator, optical modulator manufacturing method, light information processing apparatus including optical modulator, image formation apparatus including optical modulator, and image projection and display apparatus including optical modulator |
US6721473B1 (en) | 2001-02-02 | 2004-04-13 | Cheetah Omni, Llc | Variable blazed grating based signal processing |
US7339714B1 (en) | 2001-02-02 | 2008-03-04 | Cheetah Omni, Llc | Variable blazed grating based signal processing |
US6445502B1 (en) * | 2001-02-02 | 2002-09-03 | Celeste Optics, Inc. | Variable blazed grating |
US7145704B1 (en) | 2003-11-25 | 2006-12-05 | Cheetah Omni, Llc | Optical logic gate based optical router |
US20020167695A1 (en) * | 2001-03-02 | 2002-11-14 | Senturia Stephen D. | Methods and apparatus for diffractive optical processing using an actuatable structure |
US6856448B2 (en) * | 2001-03-26 | 2005-02-15 | Creo Inc. | Spatial light modulator |
US6661561B2 (en) * | 2001-03-26 | 2003-12-09 | Creo Inc. | High frequency deformable mirror device |
US6707591B2 (en) | 2001-04-10 | 2004-03-16 | Silicon Light Machines | Angled illumination for a single order light modulator based projection system |
US6586738B2 (en) | 2001-04-13 | 2003-07-01 | Mcnc | Electromagnetic radiation detectors having a micromachined electrostatic chopper device |
US7026602B2 (en) * | 2001-04-13 | 2006-04-11 | Research Triangle Institute | Electromagnetic radiation detectors having a microelectromechanical shutter device |
US6747781B2 (en) | 2001-06-25 | 2004-06-08 | Silicon Light Machines, Inc. | Method, apparatus, and diffuser for reducing laser speckle |
US6782205B2 (en) | 2001-06-25 | 2004-08-24 | Silicon Light Machines | Method and apparatus for dynamic equalization in wavelength division multiplexing |
US6639722B2 (en) | 2001-08-15 | 2003-10-28 | Silicon Light Machines | Stress tuned blazed grating light valve |
US6829092B2 (en) * | 2001-08-15 | 2004-12-07 | Silicon Light Machines, Inc. | Blazed grating light valve |
US6587253B2 (en) * | 2001-08-16 | 2003-07-01 | Silicon Light Machines | Enhance thermal stability through optical segmentation |
US6785001B2 (en) | 2001-08-21 | 2004-08-31 | Silicon Light Machines, Inc. | Method and apparatus for measuring wavelength jitter of light signal |
US6532097B1 (en) | 2001-10-11 | 2003-03-11 | Applied Materials, Inc. | Image registration apparatus having an adjustable reflective diffraction grating and method |
US7046410B2 (en) | 2001-10-11 | 2006-05-16 | Polychromix, Inc. | Actuatable diffractive optical processor |
US6900915B2 (en) | 2001-11-14 | 2005-05-31 | Ricoh Company, Ltd. | Light deflecting method and apparatus efficiently using a floating mirror |
US6906845B2 (en) * | 2001-11-26 | 2005-06-14 | Samsung Electronics Co., Ltd. | Micro-mechanical device having anti-stiction layer and method of manufacturing the device |
US7426067B1 (en) | 2001-12-17 | 2008-09-16 | Regents Of The University Of Colorado | Atomic layer deposition on micro-mechanical devices |
US6800238B1 (en) | 2002-01-15 | 2004-10-05 | Silicon Light Machines, Inc. | Method for domain patterning in low coercive field ferroelectrics |
US6987901B2 (en) * | 2002-03-01 | 2006-01-17 | Rosemount, Inc. | Optical switch with 3D waveguides |
TWI273217B (en) * | 2002-04-17 | 2007-02-11 | Accent Optical Tech Inc | Scatterometric measurement of undercut multi-layer diffracting structures |
US6853762B1 (en) | 2002-05-24 | 2005-02-08 | Cypress Semiconductor Corporation | Optical switch cascading system and method with variable incidence angle correction |
US7013058B1 (en) | 2002-05-24 | 2006-03-14 | Cypress Semiconductor Corporation | Optical switch cascading system and method with fixed incidence angle correction |
US6983087B1 (en) | 2002-05-24 | 2006-01-03 | Cypress Semiconductor Corporation | Cascading optical switch multi-plane system and method |
US6767751B2 (en) | 2002-05-28 | 2004-07-27 | Silicon Light Machines, Inc. | Integrated driver process flow |
US6822797B1 (en) | 2002-05-31 | 2004-11-23 | Silicon Light Machines, Inc. | Light modulator structure for producing high-contrast operation using zero-order light |
US6777258B1 (en) | 2002-06-28 | 2004-08-17 | Silicon Light Machines, Inc. | Conductive etch stop for etching a sacrificial layer |
US6813059B2 (en) | 2002-06-28 | 2004-11-02 | Silicon Light Machines, Inc. | Reduced formation of asperities in contact micro-structures |
US6714337B1 (en) | 2002-06-28 | 2004-03-30 | Silicon Light Machines | Method and device for modulating a light beam and having an improved gamma response |
US7045381B1 (en) | 2002-06-28 | 2006-05-16 | Silicon Light Machines Corporation | Conductive etch stop for etching a sacrificial layer |
US6801354B1 (en) | 2002-08-20 | 2004-10-05 | Silicon Light Machines, Inc. | 2-D diffraction grating for substantially eliminating polarization dependent losses |
US6870982B1 (en) | 2002-08-23 | 2005-03-22 | Cypress Semiconductor Corporation | Cascading optical switch three dimensional switch fabric system and method |
US6712480B1 (en) | 2002-09-27 | 2004-03-30 | Silicon Light Machines | Controlled curvature of stressed micro-structures |
KR100459409B1 (ko) * | 2002-10-24 | 2004-12-03 | 엘지전자 주식회사 | 공간 광 모듈레이터 및 그 제조방법 |
KR100459408B1 (ko) * | 2002-10-24 | 2004-12-03 | 엘지전자 주식회사 | 레이저 디스플레이용 공간 광 모듈레이터 소자 및 그제조방법 |
KR100459410B1 (ko) * | 2002-10-31 | 2004-12-03 | 엘지전자 주식회사 | 광모듈레이터 소자 및 생산방법 |
US7553686B2 (en) * | 2002-12-17 | 2009-06-30 | The Regents Of The University Of Colorado, A Body Corporate | Al2O3 atomic layer deposition to enhance the deposition of hydrophobic or hydrophilic coatings on micro-electromechanical devices |
EP1590698A4 (en) | 2003-01-24 | 2009-07-22 | Univ Montana State | VARIABLE OUTSIDE FOCUSING AND BREATHING CONTROL MIRRORS AND METHOD |
US6894822B2 (en) * | 2003-02-04 | 2005-05-17 | Silicon Light Machines Corporation | Robust reflective surface for light modulators |
US6922272B1 (en) * | 2003-02-14 | 2005-07-26 | Silicon Light Machines Corporation | Method and apparatus for leveling thermal stress variations in multi-layer MEMS devices |
US6967718B1 (en) | 2003-02-28 | 2005-11-22 | Silicon Light Machines Corportion | Method and apparatus for monitoring WDM channels and for analyzing dispersed spectrum of light |
US6806997B1 (en) | 2003-02-28 | 2004-10-19 | Silicon Light Machines, Inc. | Patterned diffractive light modulator ribbon for PDL reduction |
US6829077B1 (en) | 2003-02-28 | 2004-12-07 | Silicon Light Machines, Inc. | Diffractive light modulator with dynamically rotatable diffraction plane |
JP2007503623A (ja) * | 2003-03-03 | 2007-02-22 | モンタナ ステート ユニバーシティー−ボーズマン | 小型共焦点光学装置、システムおよび方法 |
US6947199B2 (en) * | 2003-03-28 | 2005-09-20 | Silicon Light Machines Corporation | Loosely-packed two-dimensional modulator arrangement |
JP4400855B2 (ja) | 2003-04-15 | 2010-01-20 | 株式会社リコー | 光偏向装置、光偏向装置の製造方法、光偏向アレー、画像形成装置および画像投影表示装置 |
US6930817B2 (en) * | 2003-04-25 | 2005-08-16 | Palo Alto Research Center Incorporated | Configurable grating based on surface relief pattern for use as a variable optical attenuator |
CN1297830C (zh) * | 2003-06-05 | 2007-01-31 | 华新丽华股份有限公司 | 光栅结构的制作方法 |
JP4363916B2 (ja) | 2003-06-27 | 2009-11-11 | 株式会社リコー | 光偏向装置の駆動方法、光偏向装置、光偏向アレー、画像形成装置および画像投影表示装置 |
US6856449B2 (en) * | 2003-07-10 | 2005-02-15 | Evans & Sutherland Computer Corporation | Ultra-high resolution light modulation control system and method |
JP4400865B2 (ja) | 2004-01-06 | 2010-01-20 | 株式会社リコー | 光偏向装置 |
US7149028B2 (en) * | 2004-04-29 | 2006-12-12 | Samsung Electro-Mechanics Co., Ltd. | Transmissive-diffractive light modulator |
US7476327B2 (en) | 2004-05-04 | 2009-01-13 | Idc, Llc | Method of manufacture for microelectromechanical devices |
US7099064B2 (en) | 2004-06-03 | 2006-08-29 | Samsung Electro-Mechanics Co., Ltd. | Electrostatic-type variable diffractive light modulator and manufacturing method thereof |
EP1789707A2 (en) | 2004-07-23 | 2007-05-30 | AFA Controls, LLC | Methods of operating microvalve assemblies and related structures and related devices |
KR100632548B1 (ko) | 2004-09-06 | 2006-10-09 | 삼성전기주식회사 | 대칭 형상의 캔티레버를 이용한 회절형 광변조기 |
US7630119B2 (en) | 2004-09-27 | 2009-12-08 | Qualcomm Mems Technologies, Inc. | Apparatus and method for reducing slippage between structures in an interferometric modulator |
US7564612B2 (en) | 2004-09-27 | 2009-07-21 | Idc, Llc | Photonic MEMS and structures |
US8008736B2 (en) | 2004-09-27 | 2011-08-30 | Qualcomm Mems Technologies, Inc. | Analog interferometric modulator device |
US7302157B2 (en) | 2004-09-27 | 2007-11-27 | Idc, Llc | System and method for multi-level brightness in interferometric modulation |
US7527995B2 (en) | 2004-09-27 | 2009-05-05 | Qualcomm Mems Technologies, Inc. | Method of making prestructure for MEMS systems |
US7612932B2 (en) | 2004-09-27 | 2009-11-03 | Idc, Llc | Microelectromechanical device with optical function separated from mechanical and electrical function |
US7130104B2 (en) | 2004-09-27 | 2006-10-31 | Idc, Llc | Methods and devices for inhibiting tilting of a mirror in an interferometric modulator |
US7944599B2 (en) | 2004-09-27 | 2011-05-17 | Qualcomm Mems Technologies, Inc. | Electromechanical device with optical function separated from mechanical and electrical function |
US7372613B2 (en) | 2004-09-27 | 2008-05-13 | Idc, Llc | Method and device for multistate interferometric light modulation |
US7583429B2 (en) | 2004-09-27 | 2009-09-01 | Idc, Llc | Ornamental display device |
US7321456B2 (en) | 2004-09-27 | 2008-01-22 | Idc, Llc | Method and device for corner interferometric modulation |
US7936497B2 (en) | 2004-09-27 | 2011-05-03 | Qualcomm Mems Technologies, Inc. | MEMS device having deformable membrane characterized by mechanical persistence |
US7304784B2 (en) | 2004-09-27 | 2007-12-04 | Idc, Llc | Reflective display device having viewable display on both sides |
US7289259B2 (en) | 2004-09-27 | 2007-10-30 | Idc, Llc | Conductive bus structure for interferometric modulator array |
US7420725B2 (en) | 2004-09-27 | 2008-09-02 | Idc, Llc | Device having a conductive light absorbing mask and method for fabricating same |
US7446925B2 (en) * | 2004-11-26 | 2008-11-04 | Alces Technology | Micro-electromechanical light modulator with anamorphic optics |
US7054051B1 (en) * | 2004-11-26 | 2006-05-30 | Alces Technology, Inc. | Differential interferometric light modulator and image display device |
US7054054B1 (en) | 2004-12-20 | 2006-05-30 | Palo Alto Research Center Incorporated | Optical modulator with a traveling surface relief pattern |
KR100815362B1 (ko) | 2005-01-05 | 2008-03-19 | 삼성전기주식회사 | 인터디지테이트형의 회절형 광변조기 |
US7884989B2 (en) * | 2005-05-27 | 2011-02-08 | Qualcomm Mems Technologies, Inc. | White interferometric modulators and methods for forming the same |
JP2007109718A (ja) * | 2005-10-11 | 2007-04-26 | Toshiba Corp | 半導体装置の製造方法 |
US7324922B2 (en) * | 2005-10-26 | 2008-01-29 | International Business Machines Corporation | Run-time performance verification system |
US7429983B2 (en) | 2005-11-01 | 2008-09-30 | Cheetah Omni, Llc | Packet-based digital display system |
US7916980B2 (en) | 2006-01-13 | 2011-03-29 | Qualcomm Mems Technologies, Inc. | Interconnect structure for MEMS device |
US20070194239A1 (en) * | 2006-01-31 | 2007-08-23 | Mcallister Abraham | Apparatus and method providing a hand-held spectrometer |
EP1843203A1 (en) * | 2006-04-03 | 2007-10-10 | Agfa Graphics N.V. | Method of making a photopolymer printing plate |
US7649671B2 (en) | 2006-06-01 | 2010-01-19 | Qualcomm Mems Technologies, Inc. | Analog interferometric modulator device with electrostatic actuation and release |
US7835061B2 (en) | 2006-06-28 | 2010-11-16 | Qualcomm Mems Technologies, Inc. | Support structures for free-standing electromechanical devices |
US7527998B2 (en) | 2006-06-30 | 2009-05-05 | Qualcomm Mems Technologies, Inc. | Method of manufacturing MEMS devices providing air gap control |
KR100890301B1 (ko) | 2006-08-21 | 2009-03-26 | 삼성전기주식회사 | 회절형 광변조기를 이용한 디스플레이 시스템에 있어서컬러 특성 조정 장치 및 그 방법 |
US7629197B2 (en) | 2006-10-18 | 2009-12-08 | Qualcomm Mems Technologies, Inc. | Spatial light modulator |
US7891818B2 (en) | 2006-12-12 | 2011-02-22 | Evans & Sutherland Computer Corporation | System and method for aligning RGB light in a single modulator projector |
US8115987B2 (en) | 2007-02-01 | 2012-02-14 | Qualcomm Mems Technologies, Inc. | Modulating the intensity of light from an interferometric reflector |
US7742220B2 (en) | 2007-03-28 | 2010-06-22 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing conducting layers separated by stops |
US7715085B2 (en) | 2007-05-09 | 2010-05-11 | Qualcomm Mems Technologies, Inc. | Electromechanical system having a dielectric movable membrane and a mirror |
US7643202B2 (en) | 2007-05-09 | 2010-01-05 | Qualcomm Mems Technologies, Inc. | Microelectromechanical system having a dielectric movable membrane and a mirror |
US7643199B2 (en) | 2007-06-19 | 2010-01-05 | Qualcomm Mems Technologies, Inc. | High aperture-ratio top-reflective AM-iMod displays |
US7782517B2 (en) | 2007-06-21 | 2010-08-24 | Qualcomm Mems Technologies, Inc. | Infrared and dual mode displays |
US7630121B2 (en) | 2007-07-02 | 2009-12-08 | Qualcomm Mems Technologies, Inc. | Electromechanical device with optical function separated from mechanical and electrical function |
CN101809471B (zh) | 2007-07-31 | 2013-12-25 | 高通Mems科技公司 | 用于增强干涉式调制器的色彩偏移的装置 |
US8072402B2 (en) | 2007-08-29 | 2011-12-06 | Qualcomm Mems Technologies, Inc. | Interferometric optical modulator with broadband reflection characteristics |
US7773286B2 (en) | 2007-09-14 | 2010-08-10 | Qualcomm Mems Technologies, Inc. | Periodic dimple array |
US7847999B2 (en) | 2007-09-14 | 2010-12-07 | Qualcomm Mems Technologies, Inc. | Interferometric modulator display devices |
US8058549B2 (en) | 2007-10-19 | 2011-11-15 | Qualcomm Mems Technologies, Inc. | Photovoltaic devices with integrated color interferometric film stacks |
JP5209727B2 (ja) | 2007-10-19 | 2013-06-12 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | 一体型光起電力デバイスを有するディスプレイ |
EP2203765A1 (en) | 2007-10-23 | 2010-07-07 | Qualcomm Mems Technologies, Inc. | Adjustably transmissive mems-based devices |
US8941631B2 (en) | 2007-11-16 | 2015-01-27 | Qualcomm Mems Technologies, Inc. | Simultaneous light collection and illumination on an active display |
US7715079B2 (en) | 2007-12-07 | 2010-05-11 | Qualcomm Mems Technologies, Inc. | MEMS devices requiring no mechanical support |
US8164821B2 (en) | 2008-02-22 | 2012-04-24 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device with thermal expansion balancing layer or stiffening layer |
US7944604B2 (en) | 2008-03-07 | 2011-05-17 | Qualcomm Mems Technologies, Inc. | Interferometric modulator in transmission mode |
US7612933B2 (en) | 2008-03-27 | 2009-11-03 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device with spacing layer |
US7898723B2 (en) | 2008-04-02 | 2011-03-01 | Qualcomm Mems Technologies, Inc. | Microelectromechanical systems display element with photovoltaic structure |
US7969638B2 (en) | 2008-04-10 | 2011-06-28 | Qualcomm Mems Technologies, Inc. | Device having thin black mask and method of fabricating the same |
US8358317B2 (en) | 2008-05-23 | 2013-01-22 | Evans & Sutherland Computer Corporation | System and method for displaying a planar image on a curved surface |
US8702248B1 (en) | 2008-06-11 | 2014-04-22 | Evans & Sutherland Computer Corporation | Projection method for reducing interpixel gaps on a viewing surface |
US7746539B2 (en) | 2008-06-25 | 2010-06-29 | Qualcomm Mems Technologies, Inc. | Method for packing a display device and the device obtained thereof |
US7768690B2 (en) | 2008-06-25 | 2010-08-03 | Qualcomm Mems Technologies, Inc. | Backlight displays |
US8023167B2 (en) | 2008-06-25 | 2011-09-20 | Qualcomm Mems Technologies, Inc. | Backlight displays |
US7859740B2 (en) | 2008-07-11 | 2010-12-28 | Qualcomm Mems Technologies, Inc. | Stiction mitigation with integrated mech micro-cantilevers through vertical stress gradient control |
US7855826B2 (en) | 2008-08-12 | 2010-12-21 | Qualcomm Mems Technologies, Inc. | Method and apparatus to reduce or eliminate stiction and image retention in interferometric modulator devices |
US8358266B2 (en) | 2008-09-02 | 2013-01-22 | Qualcomm Mems Technologies, Inc. | Light turning device with prismatic light turning features |
US8077378B1 (en) | 2008-11-12 | 2011-12-13 | Evans & Sutherland Computer Corporation | Calibration system and method for light modulation device |
US8270056B2 (en) | 2009-03-23 | 2012-09-18 | Qualcomm Mems Technologies, Inc. | Display device with openings between sub-pixels and method of making same |
US9121979B2 (en) | 2009-05-29 | 2015-09-01 | Qualcomm Mems Technologies, Inc. | Illumination devices and methods of fabrication thereof |
CN101996951B (zh) * | 2009-08-20 | 2013-09-11 | 中芯国际集成电路制造(上海)有限公司 | 非易失性存储器结构及其形成方法 |
US8270062B2 (en) | 2009-09-17 | 2012-09-18 | Qualcomm Mems Technologies, Inc. | Display device with at least one movable stop element |
US8488228B2 (en) | 2009-09-28 | 2013-07-16 | Qualcomm Mems Technologies, Inc. | Interferometric display with interferometric reflector |
CN102097385B (zh) * | 2009-12-15 | 2014-05-07 | 中芯国际集成电路制造(上海)有限公司 | 双位快闪存储器的制作方法 |
CN102097490A (zh) * | 2009-12-15 | 2011-06-15 | 中芯国际集成电路制造(上海)有限公司 | 双位快闪存储器的制作方法 |
CN102097383B (zh) * | 2009-12-15 | 2013-06-19 | 中芯国际集成电路制造(上海)有限公司 | 双位快闪存储器的制作方法 |
CN102110658B (zh) * | 2009-12-29 | 2013-07-17 | 中芯国际集成电路制造(上海)有限公司 | 双位快闪存储器的制作方法 |
KR20130100232A (ko) | 2010-04-09 | 2013-09-10 | 퀄컴 엠이엠에스 테크놀로지스, 인크. | 전기 기계 디바이스의 기계층 및 그 형성 방법 |
JP2013544370A (ja) | 2010-08-17 | 2013-12-12 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | 干渉ディスプレイデバイスの電荷中性電極の作動及び較正 |
US9057872B2 (en) | 2010-08-31 | 2015-06-16 | Qualcomm Mems Technologies, Inc. | Dielectric enhanced mirror for IMOD display |
US9134527B2 (en) | 2011-04-04 | 2015-09-15 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
US8963159B2 (en) | 2011-04-04 | 2015-02-24 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
US8659816B2 (en) | 2011-04-25 | 2014-02-25 | Qualcomm Mems Technologies, Inc. | Mechanical layer and methods of making the same |
US9641826B1 (en) | 2011-10-06 | 2017-05-02 | Evans & Sutherland Computer Corporation | System and method for displaying distant 3-D stereo on a dome surface |
US8736939B2 (en) | 2011-11-04 | 2014-05-27 | Qualcomm Mems Technologies, Inc. | Matching layer thin-films for an electromechanical systems reflective display device |
US8848278B2 (en) | 2013-01-10 | 2014-09-30 | Eastman Kodak Company | Asymmetrical deformable diffractive grating modulator |
US8861067B2 (en) | 2013-01-10 | 2014-10-14 | Eastman Kodak Company | Asymmetrical deformable diffractive grating modulator |
KR102065107B1 (ko) * | 2013-05-20 | 2020-02-12 | 삼성디스플레이 주식회사 | 무마스크 노광 장치 |
WO2022245572A1 (en) | 2021-05-17 | 2022-11-24 | Teledyne Micralyne Inc. | Mems-based modulation and beam control systems and methods |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4093346A (en) * | 1973-07-13 | 1978-06-06 | Minolta Camera Kabushiki Kaisha | Optical low pass filter |
US3947105A (en) * | 1973-09-21 | 1976-03-30 | Technical Operations, Incorporated | Production of colored designs |
JPS5742849B2 (zh) * | 1974-06-05 | 1982-09-10 | ||
US4017158A (en) * | 1975-03-17 | 1977-04-12 | E. I. Du Pont De Nemours And Company | Spatial frequency carrier and process of preparing same |
CH595664A5 (zh) * | 1975-11-17 | 1978-02-15 | Landis & Gyr Ag | |
US4184700A (en) * | 1975-11-17 | 1980-01-22 | Lgz Landis & Gyr Zug Ag | Documents embossed with optical markings representing genuineness information |
CH594495A5 (zh) * | 1976-05-04 | 1978-01-13 | Landis & Gyr Ag | |
US4139257A (en) * | 1976-09-28 | 1979-02-13 | Canon Kabushiki Kaisha | Synchronizing signal generator |
US4067129A (en) * | 1976-10-28 | 1978-01-10 | Trans-World Manufacturing Corporation | Display apparatus having means for creating a spectral color effect |
CH604279A5 (zh) * | 1976-12-21 | 1978-08-31 | Landis & Gyr Ag | |
CH616253A5 (zh) * | 1977-06-21 | 1980-03-14 | Landis & Gyr Ag | |
CH622896A5 (zh) * | 1978-03-20 | 1981-04-30 | Landis & Gyr Ag | |
US4440839A (en) * | 1981-03-18 | 1984-04-03 | United Technologies Corporation | Method of forming laser diffraction grating for beam sampling device |
US4408884A (en) * | 1981-06-29 | 1983-10-11 | Rca Corporation | Optical measurements of fine line parameters in integrated circuit processes |
US4492435A (en) * | 1982-07-02 | 1985-01-08 | Xerox Corporation | Multiple array full width electro mechanical modulator |
US4655539A (en) * | 1983-04-18 | 1987-04-07 | Aerodyne Products Corporation | Hologram writing apparatus and method |
CH661683A5 (de) * | 1983-09-19 | 1987-08-14 | Landis & Gyr Ag | Einrichtung zum praegen von reliefmustern hoher aufloesung. |
CH664030A5 (de) * | 1984-07-06 | 1988-01-29 | Landis & Gyr Ag | Verfahren zur erzeugung eines makroskopischen flaechenmusters mit einer mikroskopischen struktur, insbesondere einer beugungsoptisch wirksamen struktur. |
US4596992A (en) * | 1984-08-31 | 1986-06-24 | Texas Instruments Incorporated | Linear spatial light modulator and printer |
US4751509A (en) * | 1985-06-04 | 1988-06-14 | Nec Corporation | Light valve for use in a color display unit with a diffraction grating assembly included in the valve |
US4856869A (en) * | 1986-04-08 | 1989-08-15 | Canon Kabushiki Kaisha | Display element and observation apparatus having the same |
US5155604A (en) * | 1987-10-26 | 1992-10-13 | Van Leer Metallized Products (Usa) Limited | Coated paper sheet embossed with a diffraction or holographic pattern |
DE3866230D1 (de) * | 1988-03-03 | 1991-12-19 | Landis & Gyr Betriebs Ag | Dokument. |
JPH01296214A (ja) * | 1988-05-25 | 1989-11-29 | Canon Inc | 表示装置 |
JPH01306886A (ja) * | 1988-06-03 | 1989-12-11 | Canon Inc | 体積位相型回折格子 |
JP2585717B2 (ja) * | 1988-06-03 | 1997-02-26 | キヤノン株式会社 | 表示装置 |
US5058992A (en) * | 1988-09-07 | 1991-10-22 | Toppan Printing Co., Ltd. | Method for producing a display with a diffraction grating pattern and a display produced by the method |
ATE98795T1 (de) * | 1988-09-30 | 1994-01-15 | Landis & Gyr Business Support | Beugungselement. |
US4915463A (en) * | 1988-10-18 | 1990-04-10 | The United States Of America As Represented By The Department Of Energy | Multilayer diffraction grating |
GB8921722D0 (en) * | 1989-09-26 | 1989-11-08 | British Telecomm | Micromechanical switch |
JP2508387B2 (ja) * | 1989-10-16 | 1996-06-19 | 凸版印刷株式会社 | 回折格子パタ―ンを有するディスプレイの作製方法 |
US5291317A (en) * | 1990-07-12 | 1994-03-01 | Applied Holographics Corporation | Holographic diffraction grating patterns and methods for creating the same |
CA2060057C (en) * | 1991-01-29 | 1997-12-16 | Susumu Takahashi | Display having diffraction grating pattern |
US5231388A (en) * | 1991-12-17 | 1993-07-27 | Texas Instruments Incorporated | Color display system using spatial light modulators |
US5311360A (en) * | 1992-04-28 | 1994-05-10 | The Board Of Trustees Of The Leland Stanford, Junior University | Method and apparatus for modulating a light beam |
US5347433A (en) * | 1992-06-11 | 1994-09-13 | Sedlmayr Steven R | Collimated beam of light and systems and methods for implementation thereof |
US5367585A (en) * | 1993-10-27 | 1994-11-22 | General Electric Company | Integrated microelectromechanical polymeric photonic switch |
US5500761A (en) * | 1994-01-27 | 1996-03-19 | At&T Corp. | Micromechanical modulator |
-
1995
- 1995-06-07 US US08/480,459 patent/US5661592A/en not_active Expired - Lifetime
-
1996
- 1996-06-05 EP EP96919154A patent/EP0830629B1/en not_active Expired - Lifetime
- 1996-06-05 CN CNB961945753A patent/CN1153081C/zh not_active Expired - Lifetime
- 1996-06-05 JP JP9501613A patent/JP3016871B2/ja not_active Expired - Lifetime
- 1996-06-05 KR KR1019970708747A patent/KR100306085B1/ko not_active IP Right Cessation
- 1996-06-05 AU AU61564/96A patent/AU6156496A/en not_active Abandoned
- 1996-06-05 DE DE69603857T patent/DE69603857T2/de not_active Expired - Lifetime
- 1996-06-05 WO PCT/US1996/009255 patent/WO1996041226A1/en active IP Right Grant
- 1996-06-05 AT AT96919154T patent/ATE183590T1/de active
-
1997
- 1997-12-05 NO NO975695A patent/NO975695D0/no not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
US5661592A (en) | 1997-08-26 |
ATE183590T1 (de) | 1999-09-15 |
EP0830629A1 (en) | 1998-03-25 |
JP3016871B2 (ja) | 2000-03-06 |
AU6156496A (en) | 1996-12-30 |
DE69603857T2 (de) | 2000-01-13 |
JPH10510375A (ja) | 1998-10-06 |
KR100306085B1 (ko) | 2001-11-02 |
EP0830629B1 (en) | 1999-08-18 |
DE69603857D1 (de) | 1999-09-23 |
NO975695L (no) | 1997-12-05 |
WO1996041226A1 (en) | 1996-12-19 |
NO975695D0 (no) | 1997-12-05 |
CN1187249A (zh) | 1998-07-08 |
KR19990022268A (ko) | 1999-03-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1153081C (zh) | 光调制器的形成方法和制造方法以及光调制器 | |
US6238581B1 (en) | Process for manufacturing an electro-mechanical grating device | |
US6252697B1 (en) | Mechanical grating device | |
US6663788B2 (en) | Method for manufacturing a mechanical conformal grating device | |
US8913322B2 (en) | Micromechanical tunable Fabry-Perot interferometer and a method for producing the same | |
CN103399399A (zh) | 带有应力梁的机械式光调制器 | |
US20010029058A1 (en) | Method for producing optically planar surfaces for micro-electromechanical system devices | |
US6731513B2 (en) | Shielded multi-conductor interconnect bus for MEMS | |
KR950029795A (ko) | 광로조절장치 및 그 제조방법 | |
KR0150541B1 (ko) | 광로조절장치와 그 제조방법 | |
KR100273901B1 (ko) | 박막형광로조절장치의제조방법 | |
KR100220685B1 (ko) | 박막형 광로조절장치의 제조방법 | |
KR100843380B1 (ko) | 피치 제어형 광변조기 및 그 제조 방법 | |
KR100258106B1 (ko) | 박막형 광로조절장치의 제조방법 | |
KR100782000B1 (ko) | 복수의 패시베이션층을 갖는 광변조기 소자 | |
KR100257237B1 (ko) | 개선된 박막형 광로 조절 장치 및 그 제조 방법 | |
KR19990061415A (ko) | 박막형 광로조절장치의 제조방법 | |
KR970054511A (ko) | 박막의 스트레스 보상 수단이 마련된 박막 소자 및 그 제조 방법 | |
JPH04167437A (ja) | 液晶表示素子およびその製造方法 | |
KR19990019658A (ko) | 박막형 광로 조절 장치와 그 제조 방법 | |
KR19990061439A (ko) | 박막형 광로조절장치의 제조방법 | |
KR19990043440A (ko) | 박막형 광로 조절 장치의 제조방법 | |
KR960039759A (ko) | 광로 조절 장치의 제조방법 | |
KR20000032302A (ko) | 박막형 광로조절 장치의 제조 방법 | |
KR19990019068A (ko) | 박막형 광로 조절 장치의 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CX01 | Expiry of patent term |
Granted publication date: 20040609 |
|
EXPY | Termination of patent right or utility model |