CN1180458C - 半导体器件中形成金属栅的方法 - Google Patents
半导体器件中形成金属栅的方法 Download PDFInfo
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- CN1180458C CN1180458C CNB011447869A CN01144786A CN1180458C CN 1180458 C CN1180458 C CN 1180458C CN B011447869 A CNB011447869 A CN B011447869A CN 01144786 A CN01144786 A CN 01144786A CN 1180458 C CN1180458 C CN 1180458C
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 88
- 239000002184 metal Substances 0.000 title claims abstract description 88
- 238000000034 method Methods 0.000 title claims abstract description 76
- 239000004065 semiconductor Substances 0.000 title claims description 19
- 230000004888 barrier function Effects 0.000 claims abstract description 32
- 238000000151 deposition Methods 0.000 claims abstract description 19
- 230000008021 deposition Effects 0.000 claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 8
- 238000002955 isolation Methods 0.000 claims abstract description 5
- 238000005516 engineering process Methods 0.000 claims description 30
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 claims description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 11
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- ZLOKVAIRQVQRGC-UHFFFAOYSA-N CN(C)[Ti] Chemical compound CN(C)[Ti] ZLOKVAIRQVQRGC-UHFFFAOYSA-N 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- -1 tungsten nitride Chemical class 0.000 claims description 4
- 229910010037 TiAlN Inorganic materials 0.000 claims description 3
- 229910019001 CoSi Inorganic materials 0.000 claims description 2
- 229910015275 MoF 6 Inorganic materials 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229910005883 NiSi Inorganic materials 0.000 claims description 2
- 229910008484 TiSi Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 239000002243 precursor Substances 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 125000001664 diethylamino group Chemical group [H]C([H])([H])C([H])([H])N(*)C([H])([H])C([H])([H])[H] 0.000 claims 2
- 238000005137 deposition process Methods 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 8
- 238000006731 degradation reaction Methods 0.000 abstract description 8
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 238000000231 atomic layer deposition Methods 0.000 abstract 2
- 238000000059 patterning Methods 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 8
- 238000000137 annealing Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PWVDYRRUAODGNC-UHFFFAOYSA-N CCN([Ti])CC Chemical compound CCN([Ti])CC PWVDYRRUAODGNC-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910003855 HfAlO Inorganic materials 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910007875 ZrAlO Inorganic materials 0.000 description 1
- 229910006501 ZrSiO Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
Abstract
Description
Claims (12)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR85582/2000 | 2000-12-29 | ||
KR85582/00 | 2000-12-29 | ||
KR1020000085582A KR20020056260A (ko) | 2000-12-29 | 2000-12-29 | 반도체 소자의 금속 게이트 형성방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1363949A CN1363949A (zh) | 2002-08-14 |
CN1180458C true CN1180458C (zh) | 2004-12-15 |
Family
ID=19703940
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB011447869A Expired - Lifetime CN1180458C (zh) | 2000-12-29 | 2001-12-28 | 半导体器件中形成金属栅的方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7157359B2 (zh) |
JP (1) | JP2002237469A (zh) |
KR (1) | KR20020056260A (zh) |
CN (1) | CN1180458C (zh) |
TW (1) | TW516131B (zh) |
Families Citing this family (97)
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CN102315117B (zh) * | 2010-06-30 | 2013-05-22 | 中国科学院微电子研究所 | 一种Mo基/TaN金属栅叠层结构的刻蚀方法 |
CN102956450B (zh) * | 2011-08-16 | 2015-03-11 | 中芯国际集成电路制造(北京)有限公司 | 一种制作半导体器件的方法 |
KR20140003154A (ko) * | 2012-06-29 | 2014-01-09 | 에스케이하이닉스 주식회사 | 반도체 장치 제조 방법 |
CN102842620A (zh) * | 2012-09-11 | 2012-12-26 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、阵列基板、显示装置 |
JP6176776B2 (ja) * | 2013-03-22 | 2017-08-09 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、基板処理システムおよびプログラム |
KR20210055148A (ko) | 2019-11-06 | 2021-05-17 | 삼성전자주식회사 | 반도체 장치 및 그 제조방법 |
CN113690178A (zh) * | 2021-08-23 | 2021-11-23 | 长江先进存储产业创新中心有限责任公司 | 金属导电结构的制造方法 |
CN116454132A (zh) * | 2022-01-06 | 2023-07-18 | 长鑫存储技术有限公司 | 半导体结构及其制造方法 |
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JPH065852A (ja) | 1992-06-23 | 1994-01-14 | Oki Electric Ind Co Ltd | Mosfet及びその製造方法 |
JP3336747B2 (ja) * | 1994-06-09 | 2002-10-21 | ソニー株式会社 | 絶縁膜の形成方法、並びに半導体装置の作製方法及び半導体装置 |
JPH09143699A (ja) | 1995-11-24 | 1997-06-03 | Nissin Electric Co Ltd | 基材処理方法およびその装置 |
US5923056A (en) * | 1996-10-10 | 1999-07-13 | Lucent Technologies Inc. | Electronic components with doped metal oxide dielectric materials and a process for making electronic components with doped metal oxide dielectric materials |
US6197683B1 (en) | 1997-09-29 | 2001-03-06 | Samsung Electronics Co., Ltd. | Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same |
US5907780A (en) * | 1998-06-17 | 1999-05-25 | Advanced Micro Devices, Inc. | Incorporating silicon atoms into a metal oxide gate dielectric using gas cluster ion beam implantation |
KR100275738B1 (ko) | 1998-08-07 | 2000-12-15 | 윤종용 | 원자층 증착법을 이용한 박막 제조방법 |
KR20000015134A (ko) * | 1998-08-27 | 2000-03-15 | 윤종용 | 질화티탄 전극층을 갖는 게이트 전극 및 그제조방법 |
JP2000091269A (ja) | 1998-09-10 | 2000-03-31 | Fujitsu Ltd | 半導体装置の製造方法 |
JP3945043B2 (ja) | 1998-10-12 | 2007-07-18 | ソニー株式会社 | 金属窒化物膜の形成方法および電子装置の製造方法 |
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2000
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- 2001-12-28 CN CNB011447869A patent/CN1180458C/zh not_active Expired - Lifetime
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KR20020056260A (ko) | 2002-07-10 |
US20020086507A1 (en) | 2002-07-04 |
US7157359B2 (en) | 2007-01-02 |
CN1363949A (zh) | 2002-08-14 |
TW516131B (en) | 2003-01-01 |
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