CN1202577C - 发光二极管 - Google Patents

发光二极管 Download PDF

Info

Publication number
CN1202577C
CN1202577C CNB011412135A CN01141213A CN1202577C CN 1202577 C CN1202577 C CN 1202577C CN B011412135 A CNB011412135 A CN B011412135A CN 01141213 A CN01141213 A CN 01141213A CN 1202577 C CN1202577 C CN 1202577C
Authority
CN
China
Prior art keywords
light
aforementioned
emitting element
emitting diode
element chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB011412135A
Other languages
English (en)
Other versions
CN1345098A (zh
Inventor
深泽孝一
石井广彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Electronics Co Ltd
Original Assignee
Citizen Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Electronics Co Ltd filed Critical Citizen Electronics Co Ltd
Publication of CN1345098A publication Critical patent/CN1345098A/zh
Application granted granted Critical
Publication of CN1202577C publication Critical patent/CN1202577C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48237—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

一种发光二极管，能够用单一的发光元件芯片发出多种中间色调的小型且电流消耗量少。该发光二极管的特征在于具有：基板；在前述基板上形成的电极；连接到前述电极且借助于粘接剂固定在基板的上表面上的发光元件芯片；密封前述发光元件芯片的上表面和侧表面的树脂件；以及在前述树脂件中含有的荧光颗粒和至少两种不同的色素颗粒，前述色素颗粒由从酞菁蓝系化合物、蒽醌系化合物、偶氮系化合物、奎酞酮系化合物组成的组中选出的染料构成，这些化合物可通过组合形成中间色；前述色素颗粒通过吸收由荧光颗粒变换了波长的光的波长的一部分而发中间色的光。

Description

发光二极管
技术领域
本发明涉及发光二极管的改进，更详细地说，涉及把发光元件芯片本来的发光色变换成清淡色调的柔和的中间色发光的发光二极管。
背景技术
以往，为了得到中间色的发光，使发光色不同的两种以上的发光元件芯片同时发光，通过使它们多色混合来实现。作为这种发光二极管，例如如图1中所示，由两色的发光元件芯片3、4构成的表面安装型发光二极管1是公知的。该发光二极管1具有构成台座的玻璃纤维环氧树脂基板2，配置在该基板上的发光色不同的两个发光元件芯片3、4，以及覆盖这些发光元件芯片3、4的上方的树脂密封体5。在前述玻璃纤维环氧树脂基板2的上表面上设有固定上述两个发光元件芯片3、4用的阴极6a、6b，和靠键合引线7连接各发光元件芯片3、4的阳极8a、8b。
在上述发光二极管1中，在用蓝色和红色来构成两个发光元件芯片3、4的场合，通过使两者同时发光而得到作为混合色的紫色的发光。
此外，如图2中所示，搭载三色的发光元件芯片而得到多色混合的发光色的发光二极管10也是公知的。该发光二极管10具有配置在台座11的上表面上的发出红色、蓝色和绿色光的三种发光元件芯片12、13、14，分别连接到这些发光元件芯片12、13、14的各电极端子15、16、17，以及覆盖这些发光元件芯片12、13、14的上方的子弹形的树脂制密封体18。在这种结构的发光二极管10中，通过发出红色、蓝色和绿色光的三种发光元件芯片12、13、14的组合可以得到几乎所有颜色发光(《电子显示器》213页，图6·20，松本正一编著，欧姆有限公司，平成7年7月7日发行)。
可是，在上述发光二极管1、10的任一个中，为了得到中间色调的发光，不得不具有发光色不同的两种以上的发光元件芯片。因此，存在着发光二极管的封装变大，并且需要分别控制搭载的发光元件芯片的控制电路，控制方法变得复杂这样的问题。此外，因所组合的发光元件芯片的种类的不同，有时无法顺利地处理辉度的离散。例如，如果在所组合的发光元件芯片中存在着辉度低的，则因为不得不根据该辉度低的发光元件芯片来进行调整，故存在着不能充分发挥辉度高的发光元件芯片的性能这样的问题。
此外，在上述发光二极管1、10中，因为不得不同时使多个发光元件芯片发光，故还存在着电流消耗量变大这样的问题。
发明内容
本发明的一个目的在于提供一种能够以单一的发光元件芯片发出多样的中间色调的光的发光二极管。
本发明的另一个目的在于提供一种小型而廉价的发光二极管。
本发明的再一个目的在于提供一种流过发光元件芯片的电流消耗量少而且不需要控制电流值的发光二极管。
根据本发明的一种发光二极管，其特征在于具有：基板；在前述基板上形成的电极；连接到前述电极且借助于粘接剂固定在基板的上表面上的发光元件芯片；密封前述发光元件芯片的上表面和侧表面的树脂件；以及在前述树脂件中含有的荧光颗粒和至少两种不同的色素颗粒，前述色素颗粒由从酞菁蓝系化合物、蒽醌系化合物、偶氮系化合物、奎酞酮系化合物组成的组中选出的染料构成，这些化合物可通过组合形成中间色；前述色素颗粒通过吸收由荧光颗粒变换了波长的光的波长的一部分而发中间色的光。
在基板上形成电极，发光元件芯片连接到这些电极。
波长变换材料由例如荧光颗粒组成，波长吸收材料由例如色素颗粒组成。
这些波长变换材料和波长吸收材料最好是以分散的状态配置在覆盖发光元件芯片的罩构件之中。
该罩构件由例如透光性的树脂件构成。
如果用本发明，则通过使前述树脂件中含有用来得到宽波长范围的发光的荧光颗粒和用来吸收任意波长范围的色素颗粒，仅靠单一的发光元件芯片的发光色发出清淡色调的柔和的中间色成为可能。
根据本发明的另一个特征，前述荧光颗粒由钇·铝·石榴石(YAG)组成。
如果用本发明，则因为前述荧光颗粒用钇·铝·石榴石(YAG)，故通过激发该荧光颗粒能够稳定而高效地得到400nm～700nm的宽波长范围的发光。
根据本发明的另一个特征，前述色素颗粒由吸收来自发光元件芯片的光和由前述荧光颗粒变换了波长的光的波长的一部分的染料组成。
如果用本发明，则通过在前述色素颗粒中用染料，可以低成本地作出清淡色调的柔和的中间色。
根据本发明的再一个特征，前述发光元件芯片由用氮化镓系半导体化合物来形成的蓝色发光二极管元件组成。
下面参照附图详细说明上述这种本发明的特征和优点。
附图说明
图1是表示现有技术中的表面安装型多色发光二极管之一例的透视图。
图2是表示现有技术中的引线框型多色发光二极管之一例的透视图。
图3是表示根据本发明的发光二极管的第1实施例的透视图。
图4是把前述实施例中的发光二极管安装在母板上时的沿前述图3中的A-A线截取的剖视图。
图5是表示在前述发光二极管中，从发光元件芯片发出的光的波长变换的说明图。
图6是表示用本发明的发光二极管进行色度测定时的结果的CIE色度图。
图7是表示在第2实施例的发光二极管中，从发光元件芯片发出的光的波长变换的说明图。
具体实施方式
下面基于附图详细说明根据本发明的发光二极管的实施例。图3至图5示出运用于表面安装型发光二极管的场合的第1实施例。根据本实施例的表面安装型发光二极管31具有矩形的基板32，在该基板32上形成图形的一对电极(阴极33和阳极34)，以及配置在该基板31的上表面的大体上中央部的发光元件芯片41。该发光二极管31通过前述电极33、34的下面侧靠锡焊40固定于母板37上的印制配线38、39来实现表面安装(参照图4)。
前述发光元件芯片41靠涂布在其下面侧上的粘合剂51固定于基板32。该发光元件芯片41是氮化镓系半导体构成的蓝色发光元件，如图5中所示，是在由蓝宝石玻璃制成的元件基板43的上表面上扩散生长n型半导体44和p型半导体45的结构。前述n型半导体44和p型半导体45分别具有n型电极46、p型电极47，靠键合引线48、49连接到设在前述基板32上的阴极33和阳极34，通过流过一定的电流使发光元件芯片41发出蓝色光。
在本发明中，值得注目的是设有接受来自发光元件芯片41的光，变换该光的波长的波长变换材料，和接受来自发光元件芯片和波长变换材料的光，吸收该光的波长的一部分的波长吸收材料。进一步详细描述的话，波长变换材料在本实施例中由荧光颗粒52组成，波长吸收材料在本实施例中由色素颗粒53组成。
前述荧光颗粒52和色素颗粒53最好是以分散的状态配置在覆盖发光元件芯片41并密封保护基板32的罩构件，例如具有透光性的树脂件55之中。进一步详细描述的话，树脂件55由环氧树脂或硅酮树脂的透明基材制成，在该透明基材中分别适量混入成为荧光颗粒52的原料的钇·铝·石榴石(以下简称YAG)，和成为色素颗粒53的原料的染料，使之均一地分散。这样一来，含有荧光颗粒52和色素颗粒53的树脂件55留出前述阴极33和阳极34的贯通孔部35而在基板32的上表面上形成立方体形状。
作为色素颗粒53用的染料，是例如酞菁蓝系化合物，蒽醌系化合物，偶氮系化合物，奎酞酮系化合物四种，把这四种作为基体适量混合，预先作成蓝、绿、黄、橙、红、紫六色。在该场合，蓝色用酞菁蓝系化合物，绿色把酞菁蓝系化合物与蒽醌系化合物混合作成。此外，黄色用奎酞酮系化合物，橙色和红色把蒽醌系化合物与偶氮系化合物混合作成。进而，紫色用蒽醌系化合物，或者把酞菁蓝系化合物、蒽醌系化合物以及偶氮系化合物适量混合作成。在本实施例中通过把这样预先作成的六色进一步混色而作成想要的色度。再者，作为色素颗粒53不限于上述这类染料，利用颜料也是可能的。
上述实施例中的发光二极管31中，如果电流流过发光元件芯片41，则在n型半导体44和p型半导体45的边界面处发出蓝色光，该蓝色发光作为蓝色光56向上方、侧方和下方发出。特别是向上方发出的蓝色光56，通过激发分散在树脂件55之中的荧光颗粒52，在树脂件55之中向四面八方发出波长变换了的加长波长的黄色光57。此外，同时前述黄色光57和蓝色光56透过分散在树脂件55中的色素颗粒53之际，因为色素颗粒53吸收该黄色光57和蓝色光56的波长的一部分故得到多样的中间色光58。该中间色光58根据作为分散在树脂件55中的色素颗粒53的原料的染料的种类或混入量的不同而囊括所有的中间色。此外，通过控制流过发光元件芯片41的电流值还可以调整中间色调的辉度。
图6以CIE色度图示出用上述发光二极管31得到种种中间色光58时的色度测定的结果。由此，虽然根据发光色使用的色素颗粒53的种类的不同而不同，但是查明多为白色包围的中间色带上发光，在红色发光二极管、蓝色发光二极管和绿色发光二极管的连接线上附近的接近原色处的发光较少。
图7示出根据本发明的第2实施例的发光二极管。在本实施例中，在粘合上述基板32与发光元件芯片41的粘合剂51中也混入荧光颗粒52而形成荧光粘合层60，从发光元件芯片41向下方发出的光也进行波长变换，由此得到更亮的中间色光。再者，由于其他构成要素与上述图3至图5中所示的第1实施例是同样的，所以省略详细说明。在本实施例中，由于荧光颗粒52混入粘合剂51之中，所以从发光元件芯片41向下方发出的蓝色光56激发分散在前述荧光粘合层60内的荧光颗粒52，另一方面发光元件芯片41向上方发出的蓝色光56激发混入树脂件55中的荧光颗粒52，由此得到更亮的黄色光57。此外，因为透过色素颗粒53而得到的中间色光58也增加，故可以得到更加亮的中间色光。
下面基于图7来说明前述第2实施例的发光二极管61中的发光特征。如果电流流过发光元件芯片41，则在n型半导体44和p型半导体45的边界面处发出蓝色光，该蓝色光向上方、侧方和下方作为蓝色光56发光。特别是向下方一侧发出的蓝色光56激发分散在荧光粘合层60之中的荧光颗粒52，由此受到波长变换而作为黄色光57向四面八方发光。而且，该黄色光57和蓝色光56被分散在树脂件55中的色素颗粒53吸收，得到想要的中间色光58。该中间色光58与上述第1实施例同样，通过作为树脂件55中所含有的色素颗粒53的原料的染料的种类或数量的不同可以得到想要的色度。此外，通过控制流过发光元件芯片41的电流值还可以调整发光的辉度。
再者，虽然上述任一实施例都如图4中所示，就直接表面安装于设在母板37上表面上的印制配线38、39的芯片型发光二极管进行说明，但是本发明的发光二极管也可以运用于引线框型的情况。也就是说，把由氮化镓系化合物半导体组成的蓝色的发光元件芯片固定在发光元件芯片所配置的台座之上后，把荧光颗粒52或色素颗粒53适量分散在子弹形的树脂密封体之中，由此可以得到中间色光的发光。
此外，虽然上述任一实施例都就用键合引线连接发光元件芯片和电极的场合进行说明，但是本发明不限于此，也包含用例如锡焊盘的倒装片安装等连接方法。
像以上说明的这样，如果用根据本发明的发光二极管，则通过把荧光颗粒或色素颗粒分散在密封发光元件芯片的树脂件中，得到能够用单一的发光元件芯片发出中间色光的发光二极管。此外，通过调整分散前述荧光颗粒或色素颗粒的分配比率，可以使吸收波长或波长吸收量变化，可以产生多样的中间色调的发光色。
此外，因为没有必要像现有技术那样装入发光色不同的两种以上的发光元件芯片，故发光二极管的小型化成为可能。
进而，由于发光二极管的发光色可以通过混入树脂件的荧光颗粒或色素颗粒来选择，所以不需要像现有技术那样控制流过发光元件芯片的电流。
根据本发明的发光二极管，作为中间色发光的芯片型发光二极管也是有用的，是批量生产性也优良的结构。
再者，应当理解，本发明不限于上述实施例，可以进行种种变更和修改。

Claims (6)

1.一种发光二极管，其特征在于具有：
基板；
在前述基板上形成的电极；
连接到前述电极且借助于粘接剂固定在基板的上表面上的发光元件芯片；
密封前述发光元件芯片的上表面和侧表面的树脂件；以及
在前述树脂件中含有的荧光颗粒和至少两种不同的色素颗粒，
前述色素颗粒由从酞菁蓝系化合物、蒽醌系化合物、偶氮系化合物、奎酞酮系化合物组成的组中选出的染料构成，这些化合物可通过组合形成中间色；
前述色素颗粒通过吸收由荧光颗粒变换了波长的光的波长的一部分而发中间色的光。
2.权利要求1所述的发光二极管，其特征在于：在固定前述发光元件芯片的粘接剂中含有荧光颗粒。
3.权利要求1所述的发光二极管，其特征在于：前述色素颗粒含有用来形成红色、蓝色、绿色的不同的颗粒。
4.权利要求1所述的发光二极管，其特征在于：前述色素颗粒含有与前述酞菁蓝系化合物、蒽醌系化合物、偶氮系化合物、奎酞酮系化合物都不同的颗粒。
5.权利要求1所述的发光二极管，其特征在于：前述荧光颗粒是钇·铝·石榴石。
6.权利要求1所述的发光二极管，其特征在于：前述发光元件芯片是用氮化镓系半导体化合物形成的蓝色发光二极管元件。
CNB011412135A 2000-09-29 2001-09-28 发光二极管 Expired - Lifetime CN1202577C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP298579/2000 2000-09-29
JP2000298579A JP3609709B2 (ja) 2000-09-29 2000-09-29 発光ダイオード

Publications (2)

Publication Number Publication Date
CN1345098A CN1345098A (zh) 2002-04-17
CN1202577C true CN1202577C (zh) 2005-05-18

Family

ID=18780519

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB011412135A Expired - Lifetime CN1202577C (zh) 2000-09-29 2001-09-28 发光二极管

Country Status (7)

Country Link
US (1) US6744194B2 (zh)
EP (1) EP1193772A3 (zh)
JP (1) JP3609709B2 (zh)
KR (1) KR100448416B1 (zh)
CN (1) CN1202577C (zh)
DE (1) DE20122795U1 (zh)
TW (1) TWI257712B (zh)

Families Citing this family (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002190622A (ja) * 2000-12-22 2002-07-05 Sanken Electric Co Ltd 発光ダイオード用透光性蛍光カバー
KR20030060281A (ko) * 2002-01-08 2003-07-16 주식회사 이츠웰 발광 다이오드 장치 및 이를 이용한 디스플레이
KR100567548B1 (ko) * 2002-04-22 2006-04-05 서울반도체 주식회사 백색 칩 발광 다이오드 및 그 제조 방법
JP4360788B2 (ja) * 2002-08-29 2009-11-11 シチズン電子株式会社 液晶表示板用のバックライト及びそれに用いる発光ダイオードの製造方法
US7078737B2 (en) 2002-09-02 2006-07-18 Matsushita Electric Industrial Co., Ltd. Light-emitting device
JP3782411B2 (ja) * 2002-09-02 2006-06-07 松下電器産業株式会社 発光装置
JP4185352B2 (ja) * 2002-11-13 2008-11-26 シチズン電子株式会社 発光ダイオード及びその製造方法
US7005679B2 (en) 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
TWI275189B (en) 2003-12-30 2007-03-01 Osram Opto Semiconductors Gmbh Radiation-emitting and/or radiation-receiving semiconductor component and method for producing such component
DE10361801A1 (de) * 2003-12-30 2005-08-04 Osram Opto Semiconductors Gmbh Strahlungsemittierendes und/oder strahlungsempfangendes Halbleiterbauelement und Verfahren zu dessen Herstellung
JP2005353802A (ja) * 2004-06-10 2005-12-22 Citizen Electronics Co Ltd 発光ダイオード
US20060006366A1 (en) * 2004-07-06 2006-01-12 Vladimir Abramov Wave length shifting compositions for white emitting diode systems
US20060044806A1 (en) * 2004-08-25 2006-03-02 Abramov Vladimir S Light emitting diode system packages
JP2006073950A (ja) * 2004-09-06 2006-03-16 Kansai Electric Power Co Inc:The 高耐熱半導体装置
KR20060023443A (ko) * 2004-09-09 2006-03-14 이희목 발광 장치
DE602005023891D1 (de) * 2004-10-12 2010-11-11 Philips Intellectual Property Elektroluminsezente lichtquelle
US8125137B2 (en) 2005-01-10 2012-02-28 Cree, Inc. Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same
US7564180B2 (en) 2005-01-10 2009-07-21 Cree, Inc. Light emission device and method utilizing multiple emitters and multiple phosphors
DE102006004397A1 (de) * 2005-09-30 2007-04-05 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung emittierendes optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
TWI421438B (zh) 2005-12-21 2014-01-01 克里公司 照明裝置
EP2372223A3 (en) 2005-12-21 2012-08-01 Cree, Inc. Lighting Device and Lighting Method
KR20090009772A (ko) 2005-12-22 2009-01-23 크리 엘이디 라이팅 솔루션즈, 인크. 조명 장치
JP2007173673A (ja) * 2005-12-26 2007-07-05 Okaya Electric Ind Co Ltd カラー発光ダイオード
KR100748239B1 (ko) 2006-02-06 2007-08-09 삼성전기주식회사 발광 다이오드 패키지 및 그 제조방법
US7828460B2 (en) 2006-04-18 2010-11-09 Cree, Inc. Lighting device and lighting method
US7821194B2 (en) 2006-04-18 2010-10-26 Cree, Inc. Solid state lighting devices including light mixtures
US9084328B2 (en) 2006-12-01 2015-07-14 Cree, Inc. Lighting device and lighting method
US8513875B2 (en) 2006-04-18 2013-08-20 Cree, Inc. Lighting device and lighting method
US8998444B2 (en) 2006-04-18 2015-04-07 Cree, Inc. Solid state lighting devices including light mixtures
US7997745B2 (en) 2006-04-20 2011-08-16 Cree, Inc. Lighting device and lighting method
EP2029936B1 (en) 2006-05-31 2015-07-29 Cree, Inc. Lighting device and method of lighting
US8029155B2 (en) 2006-11-07 2011-10-04 Cree, Inc. Lighting device and lighting method
JP5367218B2 (ja) 2006-11-24 2013-12-11 シャープ株式会社 蛍光体の製造方法および発光装置の製造方法
US9441793B2 (en) 2006-12-01 2016-09-13 Cree, Inc. High efficiency lighting device including one or more solid state light emitters, and method of lighting
CN101611259B (zh) 2006-12-07 2012-06-27 科锐公司 照明装置和照明方法
TWI560405B (en) 2007-02-22 2016-12-01 Cree Inc Lighting devices, methods of lighting, light filters and methods of filtering light
DE102007015474A1 (de) 2007-03-30 2008-10-02 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung emittierendes optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
WO2008137975A1 (en) 2007-05-08 2008-11-13 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
CN101688644B (zh) 2007-05-08 2011-06-15 科锐Led照明科技公司 照明装置及照明方法
BRPI0811561A2 (pt) 2007-05-08 2015-06-16 Cree Led Lighting Solutions Dispositivo de iluminação e método de iluminação
JP2010527156A (ja) 2007-05-08 2010-08-05 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド 照明デバイスおよび照明方法
EP2142844B1 (en) 2007-05-08 2017-08-23 Cree, Inc. Lighting device and lighting method
EP2175006B1 (en) 2007-07-09 2013-07-24 Sharp Kabushiki Kaisha Group of phosphor particles, and light-emitting device using the same
US7863635B2 (en) 2007-08-07 2011-01-04 Cree, Inc. Semiconductor light emitting devices with applied wavelength conversion materials
CN101821544B (zh) 2007-10-10 2012-11-28 科锐公司 照明装置及制造方法
DE102008015941A1 (de) * 2007-12-21 2009-06-25 Osram Opto Semiconductors Gmbh Beleuchtungseinrichtung
JP2009239116A (ja) * 2008-03-27 2009-10-15 Sharp Corp 発光装置
US8350461B2 (en) 2008-03-28 2013-01-08 Cree, Inc. Apparatus and methods for combining light emitters
JP2009252898A (ja) * 2008-04-03 2009-10-29 Toyoda Gosei Co Ltd 光源装置
US8240875B2 (en) 2008-06-25 2012-08-14 Cree, Inc. Solid state linear array modules for general illumination
CN101330119B (zh) * 2008-07-22 2010-06-02 中国科学院长春光学精密机械与物理研究所 一种染料激活的绿色发光二极管的制备方法
US20100033091A1 (en) * 2008-08-08 2010-02-11 Glory Science Co., Ltd. Light emitting unit and method of manufacturing the light emitting unit
US7967652B2 (en) 2009-02-19 2011-06-28 Cree, Inc. Methods for combining light emitting devices in a package and packages including combined light emitting devices
US8333631B2 (en) 2009-02-19 2012-12-18 Cree, Inc. Methods for combining light emitting devices in a package and packages including combined light emitting devices
US9000664B2 (en) * 2009-04-06 2015-04-07 Sharp Kabushiki Kaisha Phosphor particle group, light emitting apparatus using the same, and liquid crystal display television
JP2010245481A (ja) * 2009-04-10 2010-10-28 Sharp Corp 発光装置
US8921876B2 (en) 2009-06-02 2014-12-30 Cree, Inc. Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements
EP2480816A1 (en) 2009-09-25 2012-08-01 Cree, Inc. Lighting device with low glare and high light level uniformity
KR101098006B1 (ko) 2009-09-29 2011-12-23 한국화학연구원 (할로)실리케이트계 형광체 및 이의 제조방법
US9435493B2 (en) 2009-10-27 2016-09-06 Cree, Inc. Hybrid reflector system for lighting device
KR101378813B1 (ko) 2010-01-08 2014-03-27 샤프 가부시키가이샤 형광체, 발광 장치, 및 그를 사용한 액정 표시 장치
TWI393274B (zh) * 2010-02-26 2013-04-11 Advanced Optoelectronic Tech 發光二極體封裝結構及其製造方法
US9275979B2 (en) 2010-03-03 2016-03-01 Cree, Inc. Enhanced color rendering index emitter through phosphor separation
US20110291132A1 (en) * 2010-05-28 2011-12-01 Fang-Chang Liu Light-emiting device with improved color rendering index
US8684559B2 (en) 2010-06-04 2014-04-01 Cree, Inc. Solid state light source emitting warm light with high CRI
US8556469B2 (en) 2010-12-06 2013-10-15 Cree, Inc. High efficiency total internal reflection optic for solid state lighting luminaires
US11251164B2 (en) 2011-02-16 2022-02-15 Creeled, Inc. Multi-layer conversion material for down conversion in solid state lighting
US9435524B2 (en) 2011-12-30 2016-09-06 Cree, Inc. Liquid cooled LED systems
US9482421B2 (en) 2011-12-30 2016-11-01 Cree, Inc. Lamp with LED array and thermal coupling medium
US9335531B2 (en) 2011-12-30 2016-05-10 Cree, Inc. LED lighting using spectral notching
JPWO2013179624A1 (ja) * 2012-05-31 2016-01-18 パナソニックＩｐマネジメント株式会社 Ｌｅｄモジュール、照明器具及びランプ
CN104241262B (zh) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 发光装置以及显示装置
US9960322B2 (en) 2014-04-23 2018-05-01 Cree, Inc. Solid state lighting devices incorporating notch filtering materials
CN107406766B (zh) * 2015-03-24 2024-03-22 亮锐控股有限公司 具有蓝色颜料的蓝色发射磷光体转换led
KR101639992B1 (ko) 2015-06-04 2016-07-15 한국화학연구원 알칼리토금속 실리케이트를 이용한 산질화물계 형광체의 제조방법
JP6632834B2 (ja) 2015-08-24 2020-01-22 スタンレー電気株式会社 発光装置
US10260683B2 (en) 2017-05-10 2019-04-16 Cree, Inc. Solid-state lamp with LED filaments having different CCT's
KR102452484B1 (ko) 2017-08-11 2022-10-11 삼성전자주식회사 발광소자 패키지 및 발광소자 패키지 모듈
KR102049524B1 (ko) 2018-03-08 2020-01-08 주식회사 한국공업엔지니어링 와전류탐상검사를 이용하여 튜브 확관부의 결함 측정을 위한 대비시험편 및 이를 이용한 결함측정방법
CN112526784A (zh) * 2019-09-19 2021-03-19 李崇华 发光二极管装置及包含其之背光模块与显示设备

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19638667C2 (de) * 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
DE29724848U1 (de) * 1996-06-26 2004-09-30 Osram Opto Semiconductors Gmbh Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
TW383508B (en) * 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
JP3065544B2 (ja) * 1996-12-06 2000-07-17 スタンレー電気株式会社 蛍光剤入りｌｅｄランプ
US5895932A (en) * 1997-01-24 1999-04-20 International Business Machines Corporation Hybrid organic-inorganic semiconductor light emitting diodes
JP2998696B2 (ja) * 1997-05-17 2000-01-11 日亜化学工業株式会社 発光ダイオード
JP3327170B2 (ja) * 1997-05-17 2002-09-24 日亜化学工業株式会社 発光ダイオードの製造方法
US5813753A (en) * 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light
JP4271747B2 (ja) * 1997-07-07 2009-06-03 株式会社朝日ラバー 発光ダイオード用透光性被覆材及び蛍光カラー光源
US5847507A (en) * 1997-07-14 1998-12-08 Hewlett-Packard Company Fluorescent dye added to epoxy of light emitting diode lens
JPH11145519A (ja) * 1997-09-02 1999-05-28 Toshiba Corp 半導体発光素子、半導体発光装置および画像表示装置
KR20000007067A (ko) * 1999-11-23 2000-02-07 김창태 형광물질을 가진 엘이디 패키지 제조방법
KR200181326Y1 (ko) * 1999-12-24 2000-05-15 서울반도체주식회사 색변환 발광다이오드
JP3809760B2 (ja) * 2000-02-18 2006-08-16 日亜化学工業株式会社 発光ダイオード
KR200205427Y1 (ko) * 2000-05-10 2000-12-01 이정훈 파장 변환 발광 다이오드

Also Published As

Publication number Publication date
JP2002111073A (ja) 2002-04-12
US20020039002A1 (en) 2002-04-04
KR100448416B1 (ko) 2004-09-13
US6744194B2 (en) 2004-06-01
EP1193772A2 (en) 2002-04-03
DE20122795U1 (de) 2007-12-27
KR20020025696A (ko) 2002-04-04
EP1193772A3 (en) 2006-03-29
JP3609709B2 (ja) 2005-01-12
CN1345098A (zh) 2002-04-17
TWI257712B (en) 2006-07-01

Similar Documents

Publication Publication Date Title
CN1202577C (zh) 发光二极管
KR100425566B1 (ko) 발광 다이오드
CN101490860B (zh) 带有波长转换材料的光电子半导体芯片和带有这种半导体芯片的半导体器件以及用于制造光电子半导体芯片的方法
CN101562225B (zh) 发光装置
EP1441395B9 (de) Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
CN103222077B (zh) 发光装置
CN100411202C (zh) 白光发光二极管
EP2400567B1 (en) Phosphor selection for a Light-Emitting Device
CN102132424B (zh) 固态照明部件
EP1737050A1 (en) Light-emitting device and illuminating device
DE112011100183T5 (de) Weisslichtgerät und -Verfahren
US20090261365A1 (en) Optoelectronic Componet Which Emits Electromagnetic Radiation, and Method for Production of an Optoelectronic Component
CN1361556A (zh) 以介质磷光粉作光变换的发光二极管
JP3400958B2 (ja) 多色発光ダイオード
TWI792031B (zh) 發光裝置及其顯示裝置和背光裝置
JP7161132B2 (ja) 発光装置の製造方法及び発光装置
CN2852397Y (zh) 发光二极管结构
CN115763456A (zh) 一种灯驱合一发光模块及显示装置
CN115127081A (zh) 可调光发光装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term

Granted publication date: 20050518

CX01 Expiry of patent term