CN1214133C - 电化学机械沉积的方法和装置 - Google Patents
电化学机械沉积的方法和装置 Download PDFInfo
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Abstract
本发明把电解液里的导体材料沉积到晶片的预定区域上。作出本申请所用的步骤包括当该晶片被置于阴极和阳极之间时,应用在晶片表面上的电解液,把导体材料镀到晶片的预定区域上,并且在电镀导体材料时,通过对其它区域进行机械抛光,阻止导体材料积累到不是预定区域的区域上。
Description
技术领域
本发明涉及电化学机械沉积的方法和装置,特别涉及提供于在半导体晶片上沉积和抛光导体材料的方法和装置。
背景技术
半导体晶片的金属化,即沉积一层金属到金属阻挡层/晶层上的晶片表面上在半导体工业中具有重要和广泛的应用。常规上,铝和其它金属作为组成半导体芯片的许多金属层的一种被沉积。近来,用于半导体芯片相互连接的铜的沉积引起了较大的兴趣,这是由于,和铝相比,铜减小了电阻,并允许应用铜的半导体芯片运转得更快且产生很小的热量,导致芯片功率和效率显著的增大。
铜的保形薄膜沉积到深亚微米通孔和沟槽内在ULSI芯片处理中变得更加困难,特别是当特征尺寸减小到0.25μm以下且纵横比大于5∶1时。已经使用通常的化学汽相沉积和电镀技术,以把这些蚀刻到硅衬底的深空腔填充。迄今的这些方法对于开发与集成ULSI技术局部连接已产生出非常高的成本和缺陷密度。
引起高成本的因素之一是导体材料特别是铜的应用方式。特别是,众所周知,在电解液中应用称作均化剂的特定杂质,以阻止或减小金属到晶片衬底表面的沉积速率。由于这些杂质的尺寸比要被填充的典型通孔的尺寸要大,金属到晶片表面的沉积被部分阻止了。然而,这种阻止是消耗电解液中加入的杂质而得到的,这就部分导致通孔不具有所需的导电特征。特别是,由于使用所述杂质,沉积导体的粒度不如所需的那么大,从而导致产品器件的质量问题,除此之外,由于随后需要重要的退火时间,增加了费用。
此外,为得到所需结构,其中导体材料存在在通孔中,而不是位于衬底表面,仍需要单独的沉积和抛光步骤。应用阳极,阴极和含有金属的电解液的常规金属沉积是众所周知的,在此之后,仍需要一个抛光步骤,该抛光步骤对于目前的高性能器件,是一个典型的化学-机械抛光步骤。尽管化学机械抛光得到满意的结果,但它是以可观的费用得到该满意结果的,且在应用悬浮液时需要大的精确度,以便得到满意的导电表面上的高抛光度。
发明内容
因此,需要一种把导体镀到半导体晶片上的较低费用和更加精确的方法。
本发明的一个目的是提供一种在半导体晶片上沉积和抛光导体材料的方法和装置。
本发明的一个目的是提供一种同时在半导体晶片上沉积和抛光导体材料的方法和装置。
本发明一个目的是提供一种方法和装置,该方法和装置把导体材料沉积到半导体晶片的深空腔中,同时从半导体晶片的上表面区域抛光/排出电解液。
本发明的另外一个目的是提供一种在半导体晶片上沉积导体材料中使用的电解液的再循环方法和装置。
本发明的这些和其它目的是通过从电解液把导体材料沉积到晶片预定区域而得到的。实现本申请所用的步骤包括当该晶片被安排在阳极附近时,应用置于晶片表面上的电解液,把导体材料施加到晶片的预定区域上,并且在导体材料被正在沉积时,通过机械抛光,保护,或减少电解液与其他区域的接触,阻止导体材料积累到不是预定区域的区域上。
执行所述方法的装置包括施加电源时能够接收第一电势的阳极。阴极或晶片和阳极隔开,在施加电源时能够接收和第一电势相反的第二电势。一个垫块或多个垫块被安排在阳极和阴极之间,该垫块关于晶片的表面是可移动的,当电源施加到阳极和阴极时,防止或减小导体材料镀到某些其它区域上。此外,在应用电源时,一个流体箱允许电解液被安排在晶片或垫块的表面上,并且导体材料形成在晶片的所需区域上。
具体地说,本发明提供一种将导体材料从电解液沉积到工件的方法,该工件具有顶表面和置于顶表面上的空腔部分,并且该工件具有置于工件的顶表面和空腔部分的导电层,该方法包含以下步骤:在该工件和阳极之间施加电位差,该工件被放置在阳极附近,从而导致导体材料至少镀到置于工件的空腔部分上的导电层上;以及在发生导体材料的电镀时,用垫块对该工件顶表面上的导电层进行抛光,把导体材料到位于该工件顶表面上的导电层的积累减至最小。
本发明还提供一种工件,包含:第一导电区域;配置在第一导电层之上的绝缘体;至少一个配置在绝缘体中的开口;配置在该开口中的第二导电层,从而与第一导电区域建立电接触,该第二导电层具有顶表面,并通过以下步骤形成:提供一种导体,其被配置在绝缘体之上和该开口中;具有导体材料的电解液被置于导体上和开口中;在该工件和阳极之间施加电位差,以使导体材料镀到该开口中和导体上;以及在发生导体材料的电镀时,通过用垫块对第二导电层的顶表面进行抛光,把导体材料到配置在绝缘体之上的第二导电层的积累减至最小。
本发明还提供一种装置,用于在施加电源时将导体材料从电解液至少沉积到工件的一个空腔部分中,并且导体材料到该工件的顶表面部分的积累减至最小,该装置包含:在施加电源时能够接收第一电势的电极,该电极和该工件隔开;以及连接于该电极并放置在该电极和该工件之间的垫块,其中当该垫块和该工件的顶表面部分相接触时,该垫块在施加第一电势时相对于该工件移动,把导体材料到顶表面部分的积累减至最小,并把大量的导体材料沉积到该空腔部分。
本发明还提供一种将包含导体材料的电解液转移到工件表面上的方法,使得当应用电源时,导体材料的沉积能够发生,该方法包含以下步骤:移动和工件表面接触的垫块;以及施加电解液通过该垫块,使得电解液和工件表面相接触,从而提供当应用电源时适合于在工件表面上沉积导体材料的条件。
本发明还提供一种将导体材料从电解液沉积到工件的方法,该方法包含以下步骤:在工件和阳极之间存在电位差时,通过应用在工件表面上的电解液,使电解液流经阳极和垫块,把导体材料镀到该工件上,该工件被放置在阳极的附近;以及当执行导体材料电镀的步骤时,对该工件进行抛光。
本发明还提供一种导体材料沉积到工件的方法,该工件具有顶表面和安排在顶表面上的空腔,该方法包含以下步骤:把电解液镀到工件的顶表面和空腔部分中,该电解液包含导体材料,并基本上没有悬浮液;在该工件和阳极之间施加电位差,该工件被放置在阳极附近,从而导致导体材料镀到晶片空腔部分上;以及在发生导体材料的电镀时,用垫块对该工件的顶表面进行抛光,把导体材料到该工件顶表面的积累减至最小。
本发明还提供一种将导体材料从电解液沉积到工件的方法,该工件具有顶表面,所述顶表面包括一个顶表面部分和一个空腔部分,该方法包含以下步骤:通过阳极和连接于阳极的垫块把电解液电镀到工件的顶表面和空腔部分;在该工件和阳极之间施加电位差,该工件被放置在阳极的附近,从而导致导体材料至少镀到工件的空腔部分上;以及在发生导体材料的电镀时,用垫块对该工件的顶表面进行抛光,把导体材料到该工件顶表面的积累减至最小。
本发明还提供一种将导体材料从电解液沉积到工件上的方法,该工件具有顶表面和配置在顶表面上的空腔部分,并且该工件具有导电层,该导电层被配置在该工件的顶表面和空腔部分上,接着除去一些沉积的导体材料,该方法包含以下步骤:在该工件和电极之间施加第一电位差;以及在施加第一电位差的同时,使该工件的导电层的导电顶表面缺少电解液,而不使该工件的导电层的导电空腔部分缺少电解液,使得在该导电层的导电空腔部分中的导体材料积累以一个较大的速率发生,该速率比导体材料到导电层的导电顶表面上的积累速率大;在导体材料积累到工件的空腔后,在工件和电极之间提供极性和第一电位差相反的第二电位差,使得先前积累的一些导体材料从该工件的导电层上除去;以及在提供第二电位差的步骤发生的同时,对具有先前积累的导体材料的导电层进行抛光。
本发明还提供一种装置,用于对工件进行电镀和电抛光,该工件具有顶表面和在顶表面上的空腔部分,并且该工件具有导电层,该导电层配置在该工件的顶表面上和空腔部分上,该装置包含:一个电极,允许第一电位差被施加到该电极和工件之间,并且极性和第一电位差相反的第二电位差被施加在该电极和工件之间;以及配置在工件和电极之间的垫块,其中:在施加第一电位差时,该垫块相对于工件的移动导致工件的导电层的导电顶表面缺少电解液,而不使工件的导电层的导电空腔部分缺少电解液;以及在施加第二电位差时,该垫块相对于工件的移动导致导体材料从工件的导电表面上除去。
本发明还提供一种将导体材料从电解液沉积到工件上的方法,该工件具有顶表面和在顶表面上的空腔部分,并且该工件具有导电层,该导电层被安排在该工件的顶表面和空腔部分上,并且除去某些沉积的导体材料,该方法包含以下步骤:在该工件和电极之间施加第一电位差,该工件被放置在电极附近,从而导致导体材料至少沉积在该工件的空腔部分上的导电层上;以及在发生导体材料的电镀时,用垫块对该工件顶表面上的导电层进行抛光,把导体材料在该工件顶表面上的导电层的积累减至最小;在导体材料镀到工件的空腔中后,在工件和电极之间提供极性和第一电位差相反的第二电位差,使得先前镀上的一些导体材料从工件的导电层上除去;以及在提供第二电位差的步骤发生的同时,对具有先前积累的导体材料的导电层进行抛光。
本发明还提供一种将导体材料从电解液沉积到工件上的方法,该工件具有顶表面和在顶表面上的空腔部分,并且该工件具有导电层,该导电层被安排在该顶表面和空腔部分上,该方法包含以下步骤:在该工件和电极之间施加第一电位差;以及在施加第一电位差时,使该工件的导电层的导电顶表面缺少电解液,而不使该工件的导电层的导电空腔部分缺少电解液,使得在该导电层的导电空腔部分中的导体材料积累以一个较大的速率发生,该速率比导体材料到导电层的导电顶表面的积累速率大。
附图说明
通过下面本发明优选实施例的实施方案的详细描述,并联系附图,本发明这些和其它目的及优点变得更加明白和容易理解,其中
图1A和1B示出了本发明的第一个实施方案。
图2示出了本发明的第二个实施方案。
图3示出了根据本发明用导体填充的代表性通孔,以及
图4A-4C示出了本发明的第三个实施方案。
具体实施方式
现在将描述本发明的优选实施方案。如上述,常规处理在不同的时间应用不同的装配,以得到半导体晶片表面上的通孔或其它所需位置里的导体材料,而不使导体材料安排在不需要的位置上,该半导体晶片包含许多不同的半导体芯片。因此,生产高质量半导体集成电路元件需要的装配成本可能过大。
本发明用相同装置试图实施不同实施方案,该装置称作“电化学机械沉积装置”,以被用于沉积导体材料,还应用到抛光或减小导体材料沉积速率上。该“电化学机械沉积装置”也可应用到同时沉积和/或抛光导体材料上。尽管本发明可被应用到任何导体材料或任何适合电镀的工件上,但是它特别适合应用于铜作导体,适合在具有亚微米特征且有大的纵横比的ULSI集成电路的生产中应用。在各种实施方案中,本发明应用常规元件,以独特方式布置,以得到在此描述的功能性。
首先参考图3,以说明集成电路的一部分,该部分电路包括形成通孔的区域。在半导体技术中周知的,该通孔是把不同电路层电连接在一起的导体材料。如图3所示,通孔包含导体2,该导体能够连接下水平导体区域4和上水平导体区域6。绝缘材料8围绕该导体。当然,应当理解,本发明能够对多层集成电路芯片的任何金属层起作用。
图1A和1B说明了本发明的第一个实施方案,该方案具有两种不同的操作方式。在第一个方式中,导体材料,优选铜,或其它导体材料,使用电解液镀到通孔和/或其它所需的区域中,同时由于机械抛光和/或从此后描述的半导体晶片的上表面区域脱除掉电解液,导体材料在不需要区域的聚集被清除,或至少减至最小。在第二个操作方式中,应用常规化学机械抛光,晶片的抛光可应用相同的该装置执行,抛光到上述化学机械抛光所需要的程度。根据本发明的该实施方案,考虑到在大多数情况下只需要第一个操作方法。第二个操作方式和相应结构被用在需要非常高的抛光度的情况中。
图1A示出了根据本发明第一个实施方案的电化学机械沉积装置10的概观图,以透视图示出了机械垫块组件12,其具有围绕第一个轴14旋转的机械垫块32,示出了晶片头组件16,其具有围绕第二个轴18旋转的晶片。如图示出的,晶片在被机械垫块32覆盖的区域内旋转,如在以下将详细描述的,该区域在容器20中,该容器使各种溶液放置在此。虽然所示的为作用于单一晶片,但是应当理解,多个晶片头组件16可以和每个机械垫块组件12联系在一起,且装置10可能包括多个机械垫块组件12,每一个作用在不同的晶片上。
图1B示出了根据本发明,沿着图1A的A-A线方向的装置10的侧面横截面图。如示出的,系统10能够把金属薄膜沉积到晶片上。
每一个晶片头组件16包括一个绝缘的,优选圆形的头部组件22和一个空腔,该空腔优选在其中心有几个毫米深,且该空腔可容纳静止垫块25。应用常规传送类或真空类机械装置将半导体晶片装载到空腔22中,首先背面对着静止垫块25,以保证该晶片关于使用的晶片头组件是静止的。在晶片头组件10外围的绝缘挡圈24至少包括一个O-环或其它橡胶类密封26和载有弹簧的阴极接触电极28,每一个推压晶片的表面,且在极边缘处把晶片固定定位。如下述,从而得到不透液密封,使得阴极接触电极28同在容器20中的溶液隔离。推压静止垫块25的晶片的整个背面和位于挡圈24下面的前表面区域(典型地是前表面区域的外部1-10mm表面)由此被保护,不受包括电解液在内任何和所有溶液的影响,如下所述。
机械垫块组件12被放置在容器20中,如前面和以下描述的,该容器20容纳将被引入的各种溶液。机械垫块组件12包括一种阳极板30,该阳极板优选具有薄平环形,由诸如铜和/或铂的多孔或固体导体材料做成,并且该板被安装得使得它围绕第二轴18旋转,并且放置在已知的工作台和轴承支座上。例如,在本技术领域中周知的,且在化学机械抛光中应用的机械垫块32,被安装在阳极板30的表面上,该垫块优选以诸如聚胺酯的绝缘多孔型材料做成。机械垫块32优选地具有环形,但也可以做成其它形状,只要它能够有效地对晶片进行抛光就行。电解液可以经过箱31,从位于阳极板32后面的容器(未示出)中,送到垫块32,其中,箱31应用进入通道34,使电解液通过阳极板30和垫块32而供出。另一种方法,也可应用进入通道44,它直接把电解液向下分散到垫块32的表面上。
晶片头组件16面对着机械垫块组件12,以受控力下推。晶片头组件16应用常规机动轴36,围绕轴18旋转,而机械垫块装配12应用常规机动轴38,围绕轴14旋转。
合适的排水道40提供电解液的安全再循环或处理。因此,如上述,一旦电解液被放置在垫块32上,它能够经过排水道40排到回生容器中,该容器也未示出,它能补充和清洗电解液,从而允许再利用并对环境安全。
如下述讨论的,当以本发明的第二个方式操作时,进口44也可用来施加去离子水。
在根据本发明的第一个方式的操作中,应用电源,装置10把负电势施加到阴极接触28上,并把正电势施加到阳极30上。通过一个或两个进入通道34和44,电解液被引入到机械抛光垫块32的表面上。当两个电极之间形成电流时,电解液中的金属分子被电离,并由于阴极接触28的吸引,被沉积在晶片的表面上。发生这一切的同时,还利用机械垫块组件12执行机械抛光。由于机械垫块32的抛光或摩擦作用,机械垫块组件12基本上使金属分子不能永久地沉积在不需要该沉积的晶片表面上。因此,上面提到的目前使用的阻止或减小所述沉积的杂质或添加剂就不需要了,或者,以较小的百分比使用。因此,当第一个操作方式结束时,金属沉积到所需的通孔等中,并且基本上阻止了在不需要区域上的沉积。
在第二个操作方式中,根据经过进入通道44引入的化学物质,可执行许多不同的常规操作。如果需要化学机械抛光,可引入一种悬浮液,尽管该特定操作方式由于相当地增加了引入到装置流体箱里的杂质含量而不是优选的。在优选的第二个操作方式中,装置10可被用于晶层抛光,或通过反向电流极性(阴极和阳极极性)作为电-抛光器应用。此外,如果必需使晶片干净而用去离子水湿润,装置10也可用M水清洗,并且可以进行使用机械垫块32及去离子水进行的抛光。此后,抬起晶片离开垫块32后,可以进行旋转晶片头组件12上的晶片的旋转干燥。
图2示出了本发明的另一个实施方案。相同的标号用于指示上述图1A和1B中的对应结构。在本发明的该实施方案中,晶片是静止的,电化学机械沉积装置100是放置在收集废液容器(未示出)中的。电化学机械沉积装置100在结构上很大程度地与先前根据图1B描述的晶片头组件16相对应。然而,在该实施方案中,电化学沉积装置100包括机械垫块32,该垫块通过主轴36旋转。通过使用常规的DC发动机102,砝码104,支撑装置106和108及弹簧110,该主轴36被旋转和左右移动及保持在合适位置。
电解液通过进入通道34被引入,经过多孔电极30和机械垫块32,流到晶片所需的表面上。电解液通过排出通道40排出。
图2实施方案的操作和根据图1A和1B描述的第一方式的操作非常相似。特别是,例如先前描述的,应用电解液得到导体材料到所需通孔和/或其它区域上的沉积,同时利用旋转垫块32,对晶片表面机械抛光,该旋转垫块可以是矩形,圆形或饼形等。
根据本发明的电化学机械沉积装置同样减少了脉冲发生电源的需要,这是因为由垫块运动引起的机械脉冲产生了足够的脉冲。当该垫块相对于晶片运动时,该机械脉冲作为晶片与垫块相接触的结果而产生。机械脉冲的好处是提高了粒度和铜膜完整性,且不需要具有脉冲能力的电源。
图4A-4C说明了本发明的另一个优选实施方案。相同的标号指示对应于上述图1A,1B和图2中的对应结构。在本发明的该实施方案中,电化学机械沉积装置200包含机械垫块组件210和晶片头组件240,该机械垫块组件210对应于机械垫块组件12,该晶片头组件240对应于晶片头组件16。在该实施方案中,电化学机械沉积装置200包括安装在圆柱形阳极214上的圆形或正方形的机械垫块212,如图4A和4C所示,该阳极围绕第一轴216旋转,而如图4B所示,晶片围绕第二轴242旋转。
机械垫块212具有的尺寸可以是抛光晶片整个可用区域的大小,或在任何给定时间内的一段晶片的大小。如果在任何给定时间内只要抛光晶片的一部分,还必须包括一种驱动组件(未示出),以移动阳极214,从而移动了机械垫块212,使得接触在此时需要作用的晶片部分。
在操作中,应当理解带形机械垫块212对晶片的抛光和滚筒漆刷刷墙的方式相似。当操作时,电解液或其它溶液从位于阳极214附近的容器(未示出)中,被引入到机械垫块212上。在一个具体的实施方案中,阳极214包含进入通道224,该通道包括阳极214中的通道226和在阳极214中制成的孔228,它们一起提供溶液送到机械垫块212的路径。另一种方法,电解液可以按照先前描述的方法,通过通道213,直接分散到垫块212上。电解液被盛在绝缘箱230和绝缘溶液容器室250中,该绝缘箱形成在晶片头组件240的附近,该绝缘溶液容器室包含排出通道252。如先前描述的,密封溶液容器室250中溶液的O-环和其它常规结构,可以应用在该实施方案中。
同样,根据本发明的电化学机械沉积装置减少了脉冲发生电源的需要,这是因为由垫块和晶片旋转运动引起的机械脉冲产生了足够的脉冲。
根据本发明,在任一个实施方案中,由于机械作用被用于阻止晶片表面非需要区域上的导体的非需要堆积,均化剂就不需要了,或需要比常规使用小的百分比。此外,可以得到抛光的平滑和光亮的导体平面。
虽然只对上述实施方案进行了详细的描述,但本领域的技术人员会很容易地理解到对该实施例实施方案进行许多修改而实质上不脱离本发明新的教导和优点是可能的。
Claims (115)
1.一种将导体材料从电解液沉积到工件的方法,该工件具有顶表面和置于顶表面上的空腔部分,并且该工件具有置于工件的顶表面和空腔部分的导电层,该方法包含以下步骤:
在该工件和阳极之间施加电位差,该工件被放置在阳极附近,从而导致导体材料至少镀到置于工件的空腔部分上的导电层上;以及
在发生导体材料的电镀时,用垫块对该工件顶表面上的导电层进行抛光,把导体材料到位于该工件顶表面上的导电层的积累减至最小。
2.如权利要求1的方法,还包括以下步骤:
从发生电镀和最小化积累步骤的箱中除去电解液;
清理已除去的电解液;以及
补充电解液返回到该箱中,以应用于工件。
3.如权利要求1的方法,其中导体材料包括铜。
4.如权利要求1的方法,其中工件的空腔部分包括通孔,并且工件包括晶片。
5.如权利要求1的方法,其中电解液基本上不具有悬浮液。
6.如权利要求1的方法,其中导电层是阻挡层/晶层。
7如权利要求1的方法,其中最小化积累的步骤包括移动垫块,以帮助保持电解液和置于工件的空腔部分上的导电层相接触。
8.如权利要求7的方法,其中移动该垫块的步骤还产生机械脉冲,从而提高粒度。
9.如权利要求1的方法,其中该垫块连接于阳极,并且导体材料电镀的步骤还包含将电解液流经该阳极和垫块的步骤。
10.如权利要求1的方法,其中导体材料电镀的步骤还包含电解液直接分散到该垫块的步骤。
11.如权利要求1的方法,其中最小化积累的步骤阻止导体材料形成在该工件顶表面上的导电层上。
12.如权利要求1的方法,其中电镀步骤中,电位差应用具有第一极性的电位差,并且还包括在电镀步骤之前的下列步骤:
在工件和阳极之间施加第二电位差,该电位差具有和第一极性相反的第二极性;以及
在施加第二电位差时,对该工件的顶表面上的导电层进行抛光。
13.如权利要求12的方法,其中电解液基本上不具有悬浮液。
14.如权利要求1的方法,还包括在导体材料镀到空腔部分上的导电层上并填充该空腔部分之后,将悬浮液施加到工件上和对该工件进行化学机械抛光的步骤。
15.如权利要求1的方法,其中该工件是一种晶片。
16.如权利要求1的方法,其中导体材料电镀的步骤包括将电解液流经垫块的步骤。
17.如权利要求1的方法,其中施加电位差的步骤使用一种惰性电极和含有导体材料的电解液。
18.如权利要求1的方法,其中施加电位差的步骤使用铂作为阳极。
19.一种工件包含:
第一导电区域;
配置在第一导电层之上的绝缘体;
至少一个配置在绝缘体中的开口;
配置在该开口中的第二导电层,从而与第一导电区域建立电接触,该第二导电层具有顶表面,并通过以下步骤形成:
提供一种导体,其被配置在绝缘体之上和该开口中;
具有导体材料的电解液被置于导体上和开口中;
在该工件和阳极之间施加电位差,以使导体材料镀到该开口中和导体上;以及
在发生导体材料的电镀时,通过用垫块对第二导电层的顶表面进行抛光,把导体材料到配置在绝缘体之上的第二导电层的积累减至最小。
20.如权利要求19的工件,其中第二导电层只配置在所述至少一个开口中,并通过除去置于绝缘体上的第二导电层的部分和导体而得到,最小化积累的步骤包括在施加电位差的同时,使电解液从第二导电层的顶表面缺少,而不从至少一个开口缺少,使得在该开口中的导体材料的积累以一个较大的速率发生,该速率比导体材料到绝缘体之上第二导电层的顶表面上的积累速率大。
21.如权利要求20的工件,其中在使电解液缺少的步骤之后,最小化积累的步骤还包括:
在工件和阴极之间施加和该电位差相反的第二电位差;以及
对第二导电层的顶表面和导体进行抛光,以便除去置于绝缘体之上的第二导电层的那部分和导体。
22.如权利要求19的工件,其中第二导电层配置在该绝缘体之上和该开口上。
23.如权利要求22的工件,其中最小化积累的步骤包括:
在施加电位差的同时,使电解液从第二导电层的顶表面缺少,而不从至少一个开口缺少,使得在该开口中的导体材料的积累以一个较大的速率发生,该速率比导体材料到绝缘体之上第二导电层的顶表面上的积累速率大。
24.如权利要求19的方法,其中在电镀电解液的步骤中,导体材料被沉积在该工件的空腔中,并通过在该工件的顶表面上移动该垫块,导体材料被阻止沉积在该工件的顶表面上。
25.如权利要求21的方法,其中导体材料通过垫块电镀的步骤提供电解液流向该工件。
26.如权利要求21的方法,还包含以下步骤:
从发生电镀步骤的箱中除去电解液;
清理已除去的电解液;以及
补充电解液返回到该箱中,以应用于工件。
27.如权利要求21的方法,其中移动垫块的步骤帮助保持电解液和工件的空腔相接触。
28.如权利要求21的方法,其中移动垫块的步骤还产生机械脉冲,从而提高粒度。
29.如权利要求20的方法,其中该工件是一种晶片。
30.如权利要求20的方法,其中导体材料包括铜。
31.一种装置,用于在施加电源时将导体材料从电解液至少沉积到工件的一个空腔部分中,并且导体材料到该工件的顶表面部分的积累减至最小,该装置包含:
在施加电源时能够接收第一电势的电极,该电极和该工件隔开;以及
连接于该电极并放置在该电极和该工件之间的垫块,其中当该垫块和该工件的顶表面部分相接触时,该垫块在施加第一电势时相对于该工件移动,把导体材料到顶表面部分的积累减至最小,并把大量的导体材料沉积到该空腔部分。
32.如权利要求31的装置,其中多个垫块连接于电极,并被放置在该电极和工件之间,其中当多个垫块和该工件的顶表面部分相接触时,多个垫块把导体材料到顶表面部分的积累减至最小。
33.如权利要求31的装置,其中该工件围绕一个轴旋转,并且该垫块围绕相同的该轴旋转。
34.如权利要求31的装置,其中该工件围绕一个轴旋转,并且该垫块围绕不同于第一轴的第二轴旋转。
35.如权利要求31的装置,其中该垫块是圆柱的形状。
36.如权利要求31的装置,其中该垫块围绕该电极成形,该电极是圆柱的形状。
37.如权利要求31的装置,还包含:
工件头组件,适用于支持该工件和使该工件围绕第一轴旋转;以及
垫块组件,包括该垫块和电极,该垫块相对于该工件可移动,以帮助保持电解液和工件的该空腔部分相接触。
38.如权利要求31的装置,其中该箱包含:
用于电解液流到该工件的进入通道;以及
用于电解液从该箱流出的排出通道。
39.如权利要求38的装置,还包括一种回生容器,用于补充和清理通过排出通道流出的电解液。
40.如权利要求38的装置,其中电解液从进入通道流经该电极和该垫块到该工件上。
41.如权利要求38的装置,其中电解液从进入通道直接经垫块流向该工件。
42.如权利要求31的装置,还包含:
适用于支持该工件的工件头组件,该工件适合于围绕第一轴旋转;
具有连接于阳极的垫块的垫块组件;该阳极是圆柱形的并适合于围绕第二轴旋转。
43.如权利要求42的装置,其中圆柱形阳极包括一个通道和许多孔,其中电解液通过该通道和孔经该垫块流向该工件。
44.如权利要求42的装置,其中电解液从进入通道直接流向该垫块。
45.如权利要求42的装置,其中在第二时期该阳极接收和第一电势相反的第二电势,该第二时期紧随当阳极接收第一电势的第一时期之后,并且在第二时期该垫块对该工件的顶表面部分进行抛光,并且从顶表面部分除去导体材料。
46.如权利要求42的装置,还包含:
一种箱,允许电解液置于该工件上,并且导体材料被沉积在该工件的空腔部分上。
47.如权利要求31的装置,其中在第二时期该阳极接收和第一电势相反的第二电势,该第二时期紧随当阳极接收第一电势的第一时期之后,并且在第二时期该垫块对该工件的顶表面部分进行抛光,并且从顶表面部分除去导体材料。
48.如权利要求47的装置,还包含:
一种箱,允许电解液置于该工件上,并且允许在第一时期导体材料被沉积在该工件的空腔部分上,以及在第二时期从顶表面部分除去导体材料。
49.一种将包含导体材料的电解液转移到工件表面上的方法,使得当应用电源时,导体材料的沉积能够发生,该方法包含以下步骤:
移动和工件表面接触的垫块;以及
施加电解液通过该垫块,使得电解液和工件表面相接触,从而提供当应用电源时适合于在工件表面上沉积导体材料的条件。
50.如权利要求49的方法,其中导体材料包括铜。
51.如权利要求49的方法,其中施加电位差的步骤应用一种惰性阳极,并且电解液包含导体材料。
52.如权利要求49的方法,其中该工件是一种晶片。
53.一种将导体材料从电解液沉积到工件的方法,该方法包含以下步骤:
在工件和阳极之间存在电位差时,通过应用在工件表面上的电解液,使电解液流经阳极和垫块,把导体材料镀到该工件上,该工件被放置在阳极的附近;以及
当执行导体材料电镀的步骤时,对该工件进行抛光。
54.如权利要求53的方法,其中导体材料电镀的步骤还包含移动和工件相接触的垫块的步骤。
55.如权利要求54的方法,其中该垫块连接于该阳极。
56.如权利要求54的方法,其中导体材料电镀的步骤还包含电解液直接分散到该垫块的步骤。
57.如权利要求54的方法,其中移动垫块的步骤还产生机械脉冲,从而提高粒度。
58.如权利要求53的方法,还包含以下步骤:
从发生电镀和抛光步骤的箱中除去电解液;
清理已除去的电解液;以及
补充电解液返回到该箱中,以应用于工件。
59.如权利要求53的方法,其中导体材料包括铜。
60.如权利要求53的方法,其中该工件包括一种晶片。
61.一种导体材料沉积到工件的方法,该工件具有顶表面和安排在顶表面上的空腔,该方法包含以下步骤:
把电解液镀到工件的顶表面和空腔部分中,该电解液包含导体材料,并基本上没有悬浮液;
在该工件和阳极之间施加电位差,该工件被放置在阳极附近,从而导致导体材料镀到晶片空腔部分上;以及
在发生导体材料的电镀时,用垫块对该工件的顶表面进行抛光,把导体材料到该工件顶表面的积累减至最小。
62.如权利要求61的方法,其中电解液电镀的步骤导致不含悬浮液的电解液的电镀。
63.如权利要求61的方法,其中电解液电镀的步骤包括电解液流经垫块的步骤。
64.如权利要求61的方法,其中导电层配置在该工件的顶表面上和工件的空腔部分上,该空腔部分被电解液电镀。
65.如权利要求64的方法,还包含将悬浮液应用到该工件的步骤,以及在导体材料被电镀到空腔上的导电层上并填充到该空腔中之后,对该工件进行化学机械抛光的步骤。
66.如权利要求65的方法,其中电解液电镀的步骤导致不含悬浮液的电解液的电镀。
67.如权利要求64的方法,其中在电镀步骤中电位差应用具有第一极性的电位差,并且还包括在电解液电镀步骤之前的下列步骤:
在工件和阳极之间施加第二电位差,该电位差具有和第一极性相反的第二极性;以及
在施加第二电位差时,对该工件的顶表面上的导电层进行抛光。
68.如权利要求61的方法,其中施加电位差的步骤使用一种惰性阳极,并且电解液包含导体材料。
69.一种将导体材料从电解液沉积到工件的方法,该工件具有顶表面,所述顶表面包括一个顶表面部分和一个空腔部分,该方法包含以下步骤:
通过阳极和连接于阳极的垫块把电解液电镀到工件的顶表面和空腔部分;
在该工件和阳极之间施加电位差,该工件被放置在阳极的附近,从而导致导体材料至少镀到工件的空腔部分上;以及
在发生导体材料的电镀时,用垫块对该工件的顶表面进行抛光,把导体材料到该工件顶表面的积累减至最小。
70.如权利要求69的方法,其中导体材料包括铜。
71.如权利要求69的方法,其中施加电位差的步骤使用一种惰性阳极,并且电解液包含导体材料。
72.如权利要求69的方法,其中电解液电镀的步骤应用基本上不含悬浮液的电解液。
73.一种将导体材料从电解液沉积到工件上的方法,该工件具有顶表面和配置在顶表面上的空腔部分,并且该工件具有导电层,该导电层被配置在该工件的顶表面和空腔部分上,接着除去一些沉积的导体材料,该方法包含以下步骤:
在该工件和电极之间施加第一电位差;以及
在施加第一电位差的同时,使该工件的导电层的导电顶表面缺少电解液,而不使该工件的导电层的导电空腔部分缺少电解液,使得在该导电层的导电空腔部分中的导体材料积累以一个较大的速率发生,该速率比导体材料到导电层的导电顶表面上的积累速率大;
在导体材料积累到工件的空腔后,在工件和电极之间提供极性和第一电位差相反的第二电位差,使得先前积累的一些导体材料从该工件的导电层上除去;以及
在提供第二电位差的步骤发生的同时,对具有先前积累的导体材料的导电层进行抛光。
74.如权利要求73的方法,其中使电解液缺少的步骤使用一种移动垫块,该垫块对该工件的导电层的导电顶表面进行抛光。
75.如权利要求74的方法,其中对导电表面抛光的该垫块的移动还导致至少一些导体材料从工件的导电层的顶表面上除去。
76.如权利要求74的方法,其中抛光的步骤包括引入悬浮液到导电表面的步骤。
77.如权利要求74的方法,在提供步骤和抛光步骤结束后,还包括清理该工件的步骤。
78.如权利要求77的方法,在清理步骤结束后,还包括工件的旋转干燥步骤。
79.如权利要求74的方法,其中抛光的步骤在没有引入悬浮液的情况下进行。
80.如权利要求73的方法,其中抛光的步骤包括引入悬浮液到导电表面的步骤。
81.如权利要求73的方法,在提供步骤和抛光步骤结束后,还包括清理该工件的步骤。
82.如权利要求81的方法,在清理步骤结束后,还包括工件的旋转干燥步骤。
83.如权利要求73的方法,其中抛光的步骤在没有引入悬浮液的情况下进行。
84.一种装置,用于对工件进行电镀和电抛光,该工件具有顶表面和在顶表面上的空腔部分,并且该工件具有导电层,该导电层配置在该工件的顶表面上和空腔部分上,该装置包含:
一个电极,允许第一电位差被施加到该电极和工件之间,并且极性和第一电位差相反的第二电位差被施加在该电极和工件之间;以及
配置在工件和电极之间的垫块,其中:
在施加第一电位差时,该垫块相对于工件的移动导致工件的导电层的导电顶表面缺少电解液,而不使工件的导电层的导电空腔部分缺少电解液;以及
在施加第二电位差时,该垫块相对于工件的移动导致导体材料从工件的导电表面上除去。
85.如权利要求84的装置,其中该电极和抛光垫块相连接。
86.如权利要求84的装置,还包括引入悬浮液到导电表面的装置。
87.如权利要求84的装置,其中该垫块和工件的导电表面相接触。
88.如权利要求87的装置,其中该电极和抛光垫块相连接。
89.一种将导体材料从电解液沉积到工件上的方法,该工件具有顶表面和在顶表面上的空腔部分,并且该工件具有导电层,该导电层被安排在该工件的顶表面和空腔部分上,并且除去某些沉积的导体材料,该方法包含以下步骤:
在该工件和电极之间施加第一电位差,该工件被放置在电极附近,从而导致导体材料至少沉积在该工件的空腔部分上的导电层上;以及
在发生导体材料的电镀时,用垫块对该工件顶表面上的导电层进行抛光,把导体材料在该工件顶表面上的导电层的积累减至最小;
在导体材料镀到工件的空腔中后,在工件和电极之间提供极性和第一电位差相反的第二电位差,使得先前镀上的一些导体材料从工件的导电层上除去;以及
在提供第二电位差的步骤发生的同时,对具有先前积累的导体材料的导电层进行抛光。
90.如权利要求89的方法,其中使电解液缺少的步骤使用一种移动垫块,该垫块对工件的导电层的导电顶表面进行抛光。
91.如权利要求90的方法,其中对导电表面抛光的该垫块的移动还导致至少一些导体材料从工件的导电层的顶表面上除去。
92.如权利要求90的方法,其中抛光的步骤包括引入悬浮液到导电表面的步骤。
93.如权利要求90的方法,在提供步骤和抛光步骤结束后,还包括清理该工件的步骤。
94.如权利要求93的方法,在清理步骤结束后,还包括工件的旋转干燥步骤。
95.如权利要求90的方法,其中抛光的步骤在没有引入悬浮液的情况下发生。
96.如权利要求89的方法,其中抛光的步骤包括引入悬浮液到导电表面的步骤。
97.如权利要求89的方法,在提供步骤和抛光步骤结束后,还包括清理该工件的步骤。
98.如权利要求97的方法,在清理步骤结束后,还包括对工件抛光的步骤。
99.如权利要求97的方法,在清理步骤结束后,还包括工件的旋转干燥步骤。
100.如权利要求89的方法,其中抛光的步骤在没有引入悬浮液的情况下发生。
101.一种将导体材料从电解液沉积到工件上的方法,该工件具有顶表面和在顶表面上的空腔部分,并且该工件具有导电层,该导电层被安排在该顶表面和空腔部分上,该方法包含以下步骤:
在该工件和电极之间施加第一电位差;以及
在施加第一电位差时,使该工件的导电层的导电顶表面缺少电解液,而不使该工件的导电层的导电空腔部分缺少电解液,使得在该导电层的导电空腔部分中的导体材料积累以一个较大的速率发生,该速率比导体材料到导电层的导电顶表面的积累速率大。
102.如权利要求101的方法,其中使电解液缺少的步骤使用一种移动垫块,该垫块对工件的导电层的导电顶表面进行抛光。
103.如权利要求102的方法,其中对导电表面抛光的该垫块的移动还导致至少一些导体材料从工件的导电层的顶表面上除去。
104. 如权利要求101的方法,其中导体材料包括铜。
105.如权利要求101的方法,其中工件包括晶片。
106.如权利要求101的方法,其中电解液基本上没有悬浮液。
107.如权利要求101的方法,其中导电层是阻挡层/晶层。
108.如权利要求101的方法,其中最小化积累的步骤包括移动垫块以帮助保持电解液和置于工件的空腔部分的导电层相接触。
109.如权利要求108的方法,其中移动垫块的步骤还产生机械脉冲,从而提高粒度。
110.如权利要求108的方法,其中电解液电镀的步骤还包括电解液直接分散到垫块的步骤。
111.如权利要求108的方法,其中电解液电镀的步骤包括电解液流经该垫块的步骤。
112.如权利要求101的方法,其中在电镀步骤中电位差应用具有第一极性的电位差,并且还包括使电解液缺少的步骤之后的下列步骤:
在工件和电极之间施加第二电位差,该电位差具有和第一极性相反的第二极性;以及
在施加第二电位差时,对该工件顶表面的导电层进行抛光。
113.如权利要求112的方法,其中电解液基本上没有悬浮液。
114.如权利要求101的方法,其中电解液电镀的步骤还包括电解液流经该垫块的步骤。
115.如权利要求101的方法,其中电解液电镀的步骤还包括将电解液直接分散到垫块的步骤。
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US09/201,929 US6176992B1 (en) | 1998-11-03 | 1998-12-01 | Method and apparatus for electro-chemical mechanical deposition |
US09/201,929 | 1998-12-01 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107012489A (zh) * | 2016-01-06 | 2017-08-04 | 应用材料公司 | 用于在电化学沉积期间遮蔽工件特征的系统和方法 |
Families Citing this family (311)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7531079B1 (en) | 1998-10-26 | 2009-05-12 | Novellus Systems, Inc. | Method and apparatus for uniform electropolishing of damascene IC structures by selective agitation |
US7449098B1 (en) | 1999-10-05 | 2008-11-11 | Novellus Systems, Inc. | Method for planar electroplating |
US6709565B2 (en) * | 1998-10-26 | 2004-03-23 | Novellus Systems, Inc. | Method and apparatus for uniform electropolishing of damascene ic structures by selective agitation |
US6719615B1 (en) | 2000-10-10 | 2004-04-13 | Beaver Creek Concepts Inc | Versatile wafer refining |
US6409904B1 (en) * | 1998-12-01 | 2002-06-25 | Nutool, Inc. | Method and apparatus for depositing and controlling the texture of a thin film |
US6497800B1 (en) * | 2000-03-17 | 2002-12-24 | Nutool Inc. | Device providing electrical contact to the surface of a semiconductor workpiece during metal plating |
US6413388B1 (en) | 2000-02-23 | 2002-07-02 | Nutool Inc. | Pad designs and structures for a versatile materials processing apparatus |
US6610190B2 (en) | 2000-11-03 | 2003-08-26 | Nutool, Inc. | Method and apparatus for electrodeposition of uniform film with minimal edge exclusion on substrate |
US6251235B1 (en) | 1999-03-30 | 2001-06-26 | Nutool, Inc. | Apparatus for forming an electrical contact with a semiconductor substrate |
US7097755B2 (en) * | 1998-12-01 | 2006-08-29 | Asm Nutool, Inc. | Electrochemical mechanical processing with advancible sweeper |
US7578923B2 (en) * | 1998-12-01 | 2009-08-25 | Novellus Systems, Inc. | Electropolishing system and process |
US6902659B2 (en) * | 1998-12-01 | 2005-06-07 | Asm Nutool, Inc. | Method and apparatus for electro-chemical mechanical deposition |
US6534116B2 (en) * | 2000-08-10 | 2003-03-18 | Nutool, Inc. | Plating method and apparatus that creates a differential between additive disposed on a top surface and a cavity surface of a workpiece using an external influence |
US7427337B2 (en) * | 1998-12-01 | 2008-09-23 | Novellus Systems, Inc. | System for electropolishing and electrochemical mechanical polishing |
US7204924B2 (en) * | 1998-12-01 | 2007-04-17 | Novellus Systems, Inc. | Method and apparatus to deposit layers with uniform properties |
US7425250B2 (en) * | 1998-12-01 | 2008-09-16 | Novellus Systems, Inc. | Electrochemical mechanical processing apparatus |
US7204917B2 (en) * | 1998-12-01 | 2007-04-17 | Novellus Systems, Inc. | Workpiece surface influencing device designs for electrochemical mechanical processing and method of using the same |
EP1052062A1 (en) * | 1999-05-03 | 2000-11-15 | Applied Materials, Inc. | Pré-conditioning fixed abrasive articles |
WO2000077278A1 (en) * | 1999-06-14 | 2000-12-21 | Cvc Products, Inc. | Method and apparatus for electroplating depressions of a substrate simultaneously preventing plating on the substrate surface using a membrane cover |
US6319834B1 (en) * | 1999-08-18 | 2001-11-20 | Advanced Micro Devices, Inc. | Method and apparatus for improved planarity metallization by electroplating and CMP |
US6383934B1 (en) | 1999-09-02 | 2002-05-07 | Micron Technology, Inc. | Method and apparatus for chemical-mechanical planarization of microelectronic substrates with selected planarizing liquids |
US6355153B1 (en) * | 1999-09-17 | 2002-03-12 | Nutool, Inc. | Chip interconnect and packaging deposition methods and structures |
US6653226B1 (en) * | 2001-01-09 | 2003-11-25 | Novellus Systems, Inc. | Method for electrochemical planarization of metal surfaces |
US6756307B1 (en) * | 1999-10-05 | 2004-06-29 | Novellus Systems, Inc. | Apparatus for electrically planarizing semiconductor wafers |
JP2001188254A (ja) * | 1999-10-21 | 2001-07-10 | Matsushita Electric Ind Co Ltd | 基板内選択的電気化学処理装置と基板内選択的化学処理装置及びアクティブ基板の検査修正方法 |
US6341998B1 (en) | 1999-11-04 | 2002-01-29 | Vlsi Technology, Inc. | Integrated circuit (IC) plating deposition system and method |
US6299741B1 (en) * | 1999-11-29 | 2001-10-09 | Applied Materials, Inc. | Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus |
US6379223B1 (en) | 1999-11-29 | 2002-04-30 | Applied Materials, Inc. | Method and apparatus for electrochemical-mechanical planarization |
US6640151B1 (en) | 1999-12-22 | 2003-10-28 | Applied Materials, Inc. | Multi-tool control system, method and medium |
WO2001048800A1 (fr) * | 1999-12-24 | 2001-07-05 | Ebara Corporation | Procede et appareil de traitement de tranche de semi-conducteur |
US6632335B2 (en) | 1999-12-24 | 2003-10-14 | Ebara Corporation | Plating apparatus |
US6612915B1 (en) | 1999-12-27 | 2003-09-02 | Nutool Inc. | Work piece carrier head for plating and polishing |
US6354916B1 (en) | 2000-02-11 | 2002-03-12 | Nu Tool Inc. | Modified plating solution for plating and planarization and process utilizing same |
US7670468B2 (en) * | 2000-02-17 | 2010-03-02 | Applied Materials, Inc. | Contact assembly and method for electrochemical mechanical processing |
US20030213703A1 (en) * | 2002-05-16 | 2003-11-20 | Applied Materials, Inc. | Method and apparatus for substrate polishing |
US6962524B2 (en) * | 2000-02-17 | 2005-11-08 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
US7303462B2 (en) * | 2000-02-17 | 2007-12-04 | Applied Materials, Inc. | Edge bead removal by an electro polishing process |
US7678245B2 (en) * | 2000-02-17 | 2010-03-16 | Applied Materials, Inc. | Method and apparatus for electrochemical mechanical processing |
US7374644B2 (en) * | 2000-02-17 | 2008-05-20 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
US7303662B2 (en) * | 2000-02-17 | 2007-12-04 | Applied Materials, Inc. | Contacts for electrochemical processing |
US6991528B2 (en) * | 2000-02-17 | 2006-01-31 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
US20080156657A1 (en) * | 2000-02-17 | 2008-07-03 | Butterfield Paul D | Conductive polishing article for electrochemical mechanical polishing |
US6979248B2 (en) * | 2002-05-07 | 2005-12-27 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
US20050092621A1 (en) * | 2000-02-17 | 2005-05-05 | Yongqi Hu | Composite pad assembly for electrochemical mechanical processing (ECMP) |
US7066800B2 (en) * | 2000-02-17 | 2006-06-27 | Applied Materials Inc. | Conductive polishing article for electrochemical mechanical polishing |
US7077721B2 (en) * | 2000-02-17 | 2006-07-18 | Applied Materials, Inc. | Pad assembly for electrochemical mechanical processing |
US6537144B1 (en) | 2000-02-17 | 2003-03-25 | Applied Materials, Inc. | Method and apparatus for enhanced CMP using metals having reductive properties |
US7029365B2 (en) * | 2000-02-17 | 2006-04-18 | Applied Materials Inc. | Pad assembly for electrochemical mechanical processing |
US6991526B2 (en) | 2002-09-16 | 2006-01-31 | Applied Materials, Inc. | Control of removal profile in electrochemically assisted CMP |
US6848970B2 (en) * | 2002-09-16 | 2005-02-01 | Applied Materials, Inc. | Process control in electrochemically assisted planarization |
US7125477B2 (en) * | 2000-02-17 | 2006-10-24 | Applied Materials, Inc. | Contacts for electrochemical processing |
US7059948B2 (en) * | 2000-12-22 | 2006-06-13 | Applied Materials | Articles for polishing semiconductor substrates |
US20040020789A1 (en) * | 2000-02-17 | 2004-02-05 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
US20040182721A1 (en) * | 2003-03-18 | 2004-09-23 | Applied Materials, Inc. | Process control in electro-chemical mechanical polishing |
US7141146B2 (en) * | 2000-02-23 | 2006-11-28 | Asm Nutool, Inc. | Means to improve center to edge uniformity of electrochemical mechanical processing of workpiece surface |
US20090020437A1 (en) * | 2000-02-23 | 2009-01-22 | Basol Bulent M | Method and system for controlled material removal by electrochemical polishing |
US20060131177A1 (en) * | 2000-02-23 | 2006-06-22 | Jeffrey Bogart | Means to eliminate bubble entrapment during electrochemical processing of workpiece surface |
US6482307B2 (en) | 2000-05-12 | 2002-11-19 | Nutool, Inc. | Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing |
US6852208B2 (en) * | 2000-03-17 | 2005-02-08 | Nutool, Inc. | Method and apparatus for full surface electrotreating of a wafer |
US6582579B1 (en) * | 2000-03-24 | 2003-06-24 | Nutool, Inc. | Methods for repairing defects on a semiconductor substrate |
AU2001247428A1 (en) * | 2000-04-19 | 2001-11-07 | Nutool, Inc. | Process to minimize and/or eliminate conductive material coating over the top surface of a patterned substrate and layer structure made thereby |
US20060118425A1 (en) * | 2000-04-19 | 2006-06-08 | Basol Bulent M | Process to minimize and/or eliminate conductive material coating over the top surface of a patterned substrate |
US6313038B1 (en) | 2000-04-26 | 2001-11-06 | Micron Technology, Inc. | Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates |
EP1204139A4 (en) * | 2000-04-27 | 2010-04-28 | Ebara Corp | SUPPORT AND ROTATION DEVICE AND SEMICONDUCTOR SUBSTRATE PROCESSING DEVICE |
WO2001084617A1 (en) * | 2000-04-27 | 2001-11-08 | Nu Tool Inc. | Conductive structure for use in multi-level metallization and process |
KR100502330B1 (ko) * | 2000-04-29 | 2005-07-20 | 삼성에스디아이 주식회사 | 격벽이 마련된 기판 및 이를 이용한 플라즈마 표시장치 |
US6387289B1 (en) * | 2000-05-04 | 2002-05-14 | Micron Technology, Inc. | Planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US7195696B2 (en) * | 2000-05-11 | 2007-03-27 | Novellus Systems, Inc. | Electrode assembly for electrochemical processing of workpiece |
US6695962B2 (en) | 2001-05-01 | 2004-02-24 | Nutool Inc. | Anode designs for planar metal deposits with enhanced electrolyte solution blending and process of supplying electrolyte solution using such designs |
US6478936B1 (en) * | 2000-05-11 | 2002-11-12 | Nutool Inc. | Anode assembly for plating and planarizing a conductive layer |
KR20010107766A (ko) * | 2000-05-26 | 2001-12-07 | 마에다 시게루 | 기판처리장치 및 기판도금장치 |
US6612901B1 (en) * | 2000-06-07 | 2003-09-02 | Micron Technology, Inc. | Apparatus for in-situ optical endpointing of web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6921551B2 (en) * | 2000-08-10 | 2005-07-26 | Asm Nutool, Inc. | Plating method and apparatus for controlling deposition on predetermined portions of a workpiece |
US7754061B2 (en) * | 2000-08-10 | 2010-07-13 | Novellus Systems, Inc. | Method for controlling conductor deposition on predetermined portions of a wafer |
US6708074B1 (en) | 2000-08-11 | 2004-03-16 | Applied Materials, Inc. | Generic interface builder |
US7074113B1 (en) | 2000-08-30 | 2006-07-11 | Micron Technology, Inc. | Methods and apparatus for removing conductive material from a microelectronic substrate |
US7078308B2 (en) * | 2002-08-29 | 2006-07-18 | Micron Technology, Inc. | Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate |
US7134934B2 (en) * | 2000-08-30 | 2006-11-14 | Micron Technology, Inc. | Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium |
US7160176B2 (en) * | 2000-08-30 | 2007-01-09 | Micron Technology, Inc. | Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate |
US7112121B2 (en) * | 2000-08-30 | 2006-09-26 | Micron Technology, Inc. | Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate |
US7094131B2 (en) * | 2000-08-30 | 2006-08-22 | Micron Technology, Inc. | Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material |
US7153195B2 (en) | 2000-08-30 | 2006-12-26 | Micron Technology, Inc. | Methods and apparatus for selectively removing conductive material from a microelectronic substrate |
US7129160B2 (en) * | 2002-08-29 | 2006-10-31 | Micron Technology, Inc. | Method for simultaneously removing multiple conductive materials from microelectronic substrates |
US7220166B2 (en) * | 2000-08-30 | 2007-05-22 | Micron Technology, Inc. | Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate |
US7153410B2 (en) * | 2000-08-30 | 2006-12-26 | Micron Technology, Inc. | Methods and apparatus for electrochemical-mechanical processing of microelectronic workpieces |
US7192335B2 (en) * | 2002-08-29 | 2007-03-20 | Micron Technology, Inc. | Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates |
US6867448B1 (en) | 2000-08-31 | 2005-03-15 | Micron Technology, Inc. | Electro-mechanically polished structure |
WO2002023613A2 (en) * | 2000-09-15 | 2002-03-21 | Rodel Holdings, Inc. | Metal cmp process with reduced dishing |
US6746589B2 (en) * | 2000-09-20 | 2004-06-08 | Ebara Corporation | Plating method and plating apparatus |
US6464855B1 (en) | 2000-10-04 | 2002-10-15 | Speedfam-Ipec Corporation | Method and apparatus for electrochemical planarization of a workpiece |
US7377836B1 (en) | 2000-10-10 | 2008-05-27 | Beaver Creek Concepts Inc | Versatile wafer refining |
US20020104764A1 (en) * | 2000-11-20 | 2002-08-08 | Gautam Banerjee | Electropolishing and chemical mechanical planarization |
US7188142B2 (en) | 2000-11-30 | 2007-03-06 | Applied Materials, Inc. | Dynamic subject information generation in message services of distributed object systems in a semiconductor assembly line facility |
US6943112B2 (en) * | 2002-07-22 | 2005-09-13 | Asm Nutool, Inc. | Defect-free thin and planar film processing |
US20040170753A1 (en) * | 2000-12-18 | 2004-09-02 | Basol Bulent M. | Electrochemical mechanical processing using low temperature process environment |
US6946066B2 (en) * | 2001-07-20 | 2005-09-20 | Asm Nutool, Inc. | Multi step electrodeposition process for reducing defects and minimizing film thickness |
US6896776B2 (en) | 2000-12-18 | 2005-05-24 | Applied Materials Inc. | Method and apparatus for electro-chemical processing |
US6802946B2 (en) | 2000-12-21 | 2004-10-12 | Nutool Inc. | Apparatus for controlling thickness uniformity of electroplated and electroetched layers |
US7172497B2 (en) * | 2001-01-05 | 2007-02-06 | Asm Nutool, Inc. | Fabrication of semiconductor interconnect structures |
US6866763B2 (en) * | 2001-01-17 | 2005-03-15 | Asm Nutool. Inc. | Method and system monitoring and controlling film thickness profile during plating and electroetching |
US6613200B2 (en) | 2001-01-26 | 2003-09-02 | Applied Materials, Inc. | Electro-chemical plating with reduced thickness and integration with chemical mechanical polisher into a single platform |
US6736952B2 (en) * | 2001-02-12 | 2004-05-18 | Speedfam-Ipec Corporation | Method and apparatus for electrochemical planarization of a workpiece |
US7204743B2 (en) * | 2001-02-27 | 2007-04-17 | Novellus Systems, Inc. | Integrated circuit interconnect fabrication systems |
JP2002254248A (ja) * | 2001-02-28 | 2002-09-10 | Sony Corp | 電解加工装置 |
US7201829B2 (en) * | 2001-03-01 | 2007-04-10 | Novellus Systems, Inc. | Mask plate design |
US7323416B2 (en) * | 2001-03-14 | 2008-01-29 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US20060169597A1 (en) * | 2001-03-14 | 2006-08-03 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US6899804B2 (en) | 2001-12-21 | 2005-05-31 | Applied Materials, Inc. | Electrolyte composition and treatment for electrolytic chemical mechanical polishing |
US7128825B2 (en) | 2001-03-14 | 2006-10-31 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US7160432B2 (en) * | 2001-03-14 | 2007-01-09 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US7582564B2 (en) * | 2001-03-14 | 2009-09-01 | Applied Materials, Inc. | Process and composition for conductive material removal by electrochemical mechanical polishing |
US6811680B2 (en) * | 2001-03-14 | 2004-11-02 | Applied Materials Inc. | Planarization of substrates using electrochemical mechanical polishing |
US7232514B2 (en) | 2001-03-14 | 2007-06-19 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US6508925B2 (en) * | 2001-03-30 | 2003-01-21 | Siemens Westinghouse Power Corporation | Automated brush plating process for solid oxide fuel cells |
US6932896B2 (en) * | 2001-03-30 | 2005-08-23 | Nutool, Inc. | Method and apparatus for avoiding particle accumulation in electrodeposition |
US6869515B2 (en) | 2001-03-30 | 2005-03-22 | Uri Cohen | Enhanced electrochemical deposition (ECD) filling of high aspect ratio openings |
US6572755B2 (en) * | 2001-04-11 | 2003-06-03 | Speedfam-Ipec Corporation | Method and apparatus for electrochemically depositing a material onto a workpiece surface |
US6852630B2 (en) * | 2001-04-23 | 2005-02-08 | Asm Nutool, Inc. | Electroetching process and system |
US7344432B2 (en) * | 2001-04-24 | 2008-03-18 | Applied Materials, Inc. | Conductive pad with ion exchange membrane for electrochemical mechanical polishing |
US7137879B2 (en) * | 2001-04-24 | 2006-11-21 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
US7101799B2 (en) * | 2001-06-19 | 2006-09-05 | Applied Materials, Inc. | Feedforward and feedback control for conditioning of chemical mechanical polishing pad |
US7698012B2 (en) | 2001-06-19 | 2010-04-13 | Applied Materials, Inc. | Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing |
US7160739B2 (en) | 2001-06-19 | 2007-01-09 | Applied Materials, Inc. | Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles |
US6592742B2 (en) | 2001-07-13 | 2003-07-15 | Applied Materials Inc. | Electrochemically assisted chemical polish |
US6908540B2 (en) * | 2001-07-13 | 2005-06-21 | Applied Materials, Inc. | Method and apparatus for encapsulation of an edge of a substrate during an electro-chemical deposition process |
TW584899B (en) * | 2001-07-20 | 2004-04-21 | Nutool Inc | Planar metal electroprocessing |
US6722943B2 (en) * | 2001-08-24 | 2004-04-20 | Micron Technology, Inc. | Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces |
JP3961377B2 (ja) * | 2001-09-20 | 2007-08-22 | 株式会社リコー | 光走査装置及び画像形成装置 |
US6863794B2 (en) * | 2001-09-21 | 2005-03-08 | Applied Materials, Inc. | Method and apparatus for forming metal layers |
US6706158B2 (en) * | 2001-09-28 | 2004-03-16 | Intel Corporation | Electrochemical mechanical planarization |
US7238092B2 (en) | 2001-09-28 | 2007-07-03 | Novellus Systems, Inc. | Low-force electrochemical mechanical processing method and apparatus |
US20030072639A1 (en) * | 2001-10-17 | 2003-04-17 | Applied Materials, Inc. | Substrate support |
US6815354B2 (en) * | 2001-10-27 | 2004-11-09 | Nutool, Inc. | Method and structure for thru-mask contact electrodeposition |
TW593787B (en) * | 2001-11-02 | 2004-06-21 | Nutool Inc | Electrochemical mechanical processing with advancible sweeper |
US6776693B2 (en) | 2001-12-19 | 2004-08-17 | Applied Materials Inc. | Method and apparatus for face-up substrate polishing |
US20070295611A1 (en) * | 2001-12-21 | 2007-12-27 | Liu Feng Q | Method and composition for polishing a substrate |
US6802955B2 (en) | 2002-01-11 | 2004-10-12 | Speedfam-Ipec Corporation | Method and apparatus for the electrochemical deposition and planarization of a material on a workpiece surface |
JP3759043B2 (ja) * | 2002-01-21 | 2006-03-22 | 東京エレクトロン株式会社 | 陽極化成装置、陽極化成方法 |
US6837983B2 (en) | 2002-01-22 | 2005-01-04 | Applied Materials, Inc. | Endpoint detection for electro chemical mechanical polishing and electropolishing processes |
US6951599B2 (en) * | 2002-01-22 | 2005-10-04 | Applied Materials, Inc. | Electropolishing of metallic interconnects |
US20030146102A1 (en) * | 2002-02-05 | 2003-08-07 | Applied Materials, Inc. | Method for forming copper interconnects |
US7131889B1 (en) * | 2002-03-04 | 2006-11-07 | Micron Technology, Inc. | Method for planarizing microelectronic workpieces |
US20030168344A1 (en) * | 2002-03-08 | 2003-09-11 | Applied Materials, Inc. | Selective metal deposition for electrochemical plating |
US20030199112A1 (en) | 2002-03-22 | 2003-10-23 | Applied Materials, Inc. | Copper wiring module control |
US6793797B2 (en) * | 2002-03-26 | 2004-09-21 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for integrating an electrodeposition and electro-mechanical polishing process |
US20030201185A1 (en) * | 2002-04-29 | 2003-10-30 | Applied Materials, Inc. | In-situ pre-clean for electroplating process |
US20050194681A1 (en) * | 2002-05-07 | 2005-09-08 | Yongqi Hu | Conductive pad with high abrasion |
US7189313B2 (en) * | 2002-05-09 | 2007-03-13 | Applied Materials, Inc. | Substrate support with fluid retention band |
US20030209523A1 (en) * | 2002-05-09 | 2003-11-13 | Applied Materials, Inc. | Planarization by chemical polishing for ULSI applications |
US7124386B2 (en) * | 2002-06-07 | 2006-10-17 | Praesagus, Inc. | Dummy fill for integrated circuits |
US7152215B2 (en) * | 2002-06-07 | 2006-12-19 | Praesagus, Inc. | Dummy fill for integrated circuits |
EP1532670A4 (en) * | 2002-06-07 | 2007-09-12 | Praesagus Inc | CHARACTERIZATION AND REDUCTION OF VARIATION FOR INTEGRATED CIRCUITS |
US20030229875A1 (en) * | 2002-06-07 | 2003-12-11 | Smith Taber H. | Use of models in integrated circuit fabrication |
US7774726B2 (en) * | 2002-06-07 | 2010-08-10 | Cadence Design Systems, Inc. | Dummy fill for integrated circuits |
US7853904B2 (en) * | 2002-06-07 | 2010-12-14 | Cadence Design Systems, Inc. | Method and system for handling process related variations for integrated circuits based upon reflections |
US7712056B2 (en) * | 2002-06-07 | 2010-05-04 | Cadence Design Systems, Inc. | Characterization and verification for integrated circuit designs |
US7393755B2 (en) * | 2002-06-07 | 2008-07-01 | Cadence Design Systems, Inc. | Dummy fill for integrated circuits |
US7363099B2 (en) * | 2002-06-07 | 2008-04-22 | Cadence Design Systems, Inc. | Integrated circuit metrology |
US6808611B2 (en) * | 2002-06-27 | 2004-10-26 | Applied Materials, Inc. | Methods in electroanalytical techniques to analyze organic components in plating baths |
US6869335B2 (en) | 2002-07-08 | 2005-03-22 | Micron Technology, Inc. | Retaining rings, planarizing apparatuses including retaining rings, and methods for planarizing micro-device workpieces |
KR100559041B1 (ko) * | 2002-07-11 | 2006-03-10 | 매그나칩 반도체 유한회사 | 반도체 소자의 구리 배선 형성 방법 |
US20040072445A1 (en) * | 2002-07-11 | 2004-04-15 | Applied Materials, Inc. | Effective method to improve surface finish in electrochemically assisted CMP |
US7341502B2 (en) * | 2002-07-18 | 2008-03-11 | Micron Technology, Inc. | Methods and systems for planarizing workpieces, e.g., microelectronic workpieces |
US7799200B1 (en) | 2002-07-29 | 2010-09-21 | Novellus Systems, Inc. | Selective electrochemical accelerator removal |
US6860798B2 (en) | 2002-08-08 | 2005-03-01 | Micron Technology, Inc. | Carrier assemblies, planarizing apparatuses including carrier assemblies, and methods for planarizing micro-device workpieces |
US7094695B2 (en) * | 2002-08-21 | 2006-08-22 | Micron Technology, Inc. | Apparatus and method for conditioning a polishing pad used for mechanical and/or chemical-mechanical planarization |
US7004817B2 (en) | 2002-08-23 | 2006-02-28 | Micron Technology, Inc. | Carrier assemblies, planarizing apparatuses including carrier assemblies, and methods for planarizing micro-device workpieces |
US7011566B2 (en) * | 2002-08-26 | 2006-03-14 | Micron Technology, Inc. | Methods and systems for conditioning planarizing pads used in planarizing substrates |
US7008299B2 (en) * | 2002-08-29 | 2006-03-07 | Micron Technology, Inc. | Apparatus and method for mechanical and/or chemical-mechanical planarization of micro-device workpieces |
US6841991B2 (en) * | 2002-08-29 | 2005-01-11 | Micron Technology, Inc. | Planarity diagnostic system, E.G., for microelectronic component test systems |
US20050061674A1 (en) * | 2002-09-16 | 2005-03-24 | Yan Wang | Endpoint compensation in electroprocessing |
US7112270B2 (en) * | 2002-09-16 | 2006-09-26 | Applied Materials, Inc. | Algorithm for real-time process control of electro-polishing |
US20050040049A1 (en) * | 2002-09-20 | 2005-02-24 | Rimma Volodarsky | Anode assembly for plating and planarizing a conductive layer |
US20040084318A1 (en) * | 2002-11-05 | 2004-05-06 | Uri Cohen | Methods and apparatus for activating openings and for jets plating |
US6796887B2 (en) | 2002-11-13 | 2004-09-28 | Speedfam-Ipec Corporation | Wear ring assembly |
AU2003290932A1 (en) | 2002-11-15 | 2004-06-15 | Applied Materials, Inc. | Method, system and medium for controlling manufacture process having multivariate input parameters |
US6835657B2 (en) | 2002-12-02 | 2004-12-28 | Applied Materials, Inc. | Method for recrystallizing metal in features of a semiconductor chip |
US7442282B2 (en) * | 2002-12-02 | 2008-10-28 | Ebara Corporation | Electrolytic processing apparatus and method |
US20040149584A1 (en) * | 2002-12-27 | 2004-08-05 | Mizuki Nagai | Plating method |
US6875322B1 (en) | 2003-01-15 | 2005-04-05 | Lam Research Corporation | Electrochemical assisted CMP |
US7074114B2 (en) * | 2003-01-16 | 2006-07-11 | Micron Technology, Inc. | Carrier assemblies, polishing machines including carrier assemblies, and methods for polishing micro-device workpieces |
US7138039B2 (en) * | 2003-01-21 | 2006-11-21 | Applied Materials, Inc. | Liquid isolation of contact rings |
JP2004223665A (ja) * | 2003-01-24 | 2004-08-12 | Sony Corp | 電解研磨装置および研磨方法 |
US7087144B2 (en) * | 2003-01-31 | 2006-08-08 | Applied Materials, Inc. | Contact ring with embedded flexible contacts |
US7025861B2 (en) * | 2003-02-06 | 2006-04-11 | Applied Materials | Contact plating apparatus |
US6884152B2 (en) | 2003-02-11 | 2005-04-26 | Micron Technology, Inc. | Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces |
US6872132B2 (en) * | 2003-03-03 | 2005-03-29 | Micron Technology, Inc. | Systems and methods for monitoring characteristics of a polishing pad used in polishing micro-device workpieces |
US7842169B2 (en) * | 2003-03-04 | 2010-11-30 | Applied Materials, Inc. | Method and apparatus for local polishing control |
US6864181B2 (en) * | 2003-03-27 | 2005-03-08 | Lam Research Corporation | Method and apparatus to form a planarized Cu interconnect layer using electroless membrane deposition |
US20070131563A1 (en) * | 2003-04-14 | 2007-06-14 | Asm Nutool, Inc. | Means to improve center to edge uniformity of electrochemical mechanical processing of workpiece surface |
US7025860B2 (en) * | 2003-04-22 | 2006-04-11 | Novellus Systems, Inc. | Method and apparatus for the electrochemical deposition and removal of a material on a workpiece surface |
DE602004018631D1 (de) * | 2003-04-24 | 2009-02-05 | Afshin Ahmadian | En |
US7131891B2 (en) * | 2003-04-28 | 2006-11-07 | Micron Technology, Inc. | Systems and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces |
US6935929B2 (en) | 2003-04-28 | 2005-08-30 | Micron Technology, Inc. | Polishing machines including under-pads and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces |
KR20040094560A (ko) * | 2003-05-03 | 2004-11-10 | 삼성전자주식회사 | 반도체 소자 금속배선층의 전해 연마 방법 및 장치 |
JP2004342750A (ja) * | 2003-05-14 | 2004-12-02 | Toshiba Corp | 電子デバイスの製造方法 |
JP2004356117A (ja) * | 2003-05-26 | 2004-12-16 | Ebara Corp | 基板処理方法及びその装置 |
JP2004353061A (ja) * | 2003-05-30 | 2004-12-16 | Ebara Corp | 電解処理方法及び装置 |
US7390429B2 (en) * | 2003-06-06 | 2008-06-24 | Applied Materials, Inc. | Method and composition for electrochemical mechanical polishing processing |
US7223685B2 (en) * | 2003-06-23 | 2007-05-29 | Intel Corporation | Damascene fabrication with electrochemical layer removal |
JP2005029830A (ja) * | 2003-07-10 | 2005-02-03 | Ebara Corp | めっき装置及びめっき方法 |
US20050016861A1 (en) * | 2003-07-24 | 2005-01-27 | Thomas Laursen | Method for planarizing a work piece |
US7763548B2 (en) * | 2003-08-06 | 2010-07-27 | Micron Technology, Inc. | Microfeature workpiece processing system for, e.g., semiconductor wafer analysis |
US7250104B2 (en) * | 2003-08-08 | 2007-07-31 | Novellus Systems, Inc. | Method and system for optically enhanced metal planarization |
US7030603B2 (en) * | 2003-08-21 | 2006-04-18 | Micron Technology, Inc. | Apparatuses and methods for monitoring rotation of a conductive microfeature workpiece |
US6848977B1 (en) | 2003-08-29 | 2005-02-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad for electrochemical mechanical polishing |
JP4423356B2 (ja) * | 2003-09-02 | 2010-03-03 | 株式会社荏原製作所 | 基板のめっき装置 |
US20050051437A1 (en) * | 2003-09-04 | 2005-03-10 | Keiichi Kurashina | Plating apparatus and plating method |
US7112122B2 (en) * | 2003-09-17 | 2006-09-26 | Micron Technology, Inc. | Methods and apparatus for removing conductive material from a microelectronic substrate |
US20050092620A1 (en) * | 2003-10-01 | 2005-05-05 | Applied Materials, Inc. | Methods and apparatus for polishing a substrate |
US8158532B2 (en) * | 2003-10-20 | 2012-04-17 | Novellus Systems, Inc. | Topography reduction and control by selective accelerator removal |
US8530359B2 (en) | 2003-10-20 | 2013-09-10 | Novellus Systems, Inc. | Modulated metal removal using localized wet etching |
US20050121141A1 (en) * | 2003-11-13 | 2005-06-09 | Manens Antoine P. | Real time process control for a polishing process |
US7064057B2 (en) * | 2003-11-21 | 2006-06-20 | Asm Nutool, Inc. | Method and apparatus for localized material removal by electrochemical polishing |
US7186164B2 (en) * | 2003-12-03 | 2007-03-06 | Applied Materials, Inc. | Processing pad assembly with zone control |
JP4540981B2 (ja) * | 2003-12-25 | 2010-09-08 | 株式会社荏原製作所 | めっき方法 |
US7479213B2 (en) * | 2003-12-25 | 2009-01-20 | Ebara Corporation | Plating method and plating apparatus |
US20050178666A1 (en) * | 2004-01-13 | 2005-08-18 | Applied Materials, Inc. | Methods for fabrication of a polishing article |
US7390744B2 (en) * | 2004-01-29 | 2008-06-24 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US20060021974A1 (en) * | 2004-01-29 | 2006-02-02 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US7153777B2 (en) * | 2004-02-20 | 2006-12-26 | Micron Technology, Inc. | Methods and apparatuses for electrochemical-mechanical polishing |
US7648622B2 (en) * | 2004-02-27 | 2010-01-19 | Novellus Systems, Inc. | System and method for electrochemical mechanical polishing |
US7086927B2 (en) * | 2004-03-09 | 2006-08-08 | Micron Technology, Inc. | Methods and systems for planarizing workpieces, e.g., microelectronic workpieces |
US7125324B2 (en) * | 2004-03-09 | 2006-10-24 | 3M Innovative Properties Company | Insulated pad conditioner and method of using same |
US20050218000A1 (en) * | 2004-04-06 | 2005-10-06 | Applied Materials, Inc. | Conditioning of contact leads for metal plating systems |
US7285195B2 (en) * | 2004-06-24 | 2007-10-23 | Applied Materials, Inc. | Electric field reducing thrust plate |
US20060003566A1 (en) * | 2004-06-30 | 2006-01-05 | Ismail Emesh | Methods and apparatuses for semiconductor fabrication utilizing through-wafer interconnects |
US20060030156A1 (en) * | 2004-08-05 | 2006-02-09 | Applied Materials, Inc. | Abrasive conductive polishing article for electrochemical mechanical polishing |
US7066792B2 (en) * | 2004-08-06 | 2006-06-27 | Micron Technology, Inc. | Shaped polishing pads for beveling microfeature workpiece edges, and associate system and methods |
US7033253B2 (en) * | 2004-08-12 | 2006-04-25 | Micron Technology, Inc. | Polishing pad conditioners having abrasives and brush elements, and associated systems and methods |
US20060043534A1 (en) * | 2004-08-26 | 2006-03-02 | Kirby Kyle K | Microfeature dies with porous regions, and associated methods and systems |
US7566391B2 (en) * | 2004-09-01 | 2009-07-28 | Micron Technology, Inc. | Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media |
US7084064B2 (en) * | 2004-09-14 | 2006-08-01 | Applied Materials, Inc. | Full sequence metal and barrier layer electrochemical mechanical processing |
US7229907B2 (en) * | 2004-09-15 | 2007-06-12 | Tom Wu | Method of forming a damascene structure with integrated planar dielectric layers |
CN101027431B (zh) * | 2004-09-24 | 2011-04-13 | 揖斐电株式会社 | 电镀方法及电镀装置 |
US20060183321A1 (en) * | 2004-09-27 | 2006-08-17 | Basol Bulent M | Method for reduction of gap fill defects |
WO2006039436A2 (en) * | 2004-10-01 | 2006-04-13 | Applied Materials, Inc. | Pad design for electrochemical mechanical polishing |
US7520968B2 (en) * | 2004-10-05 | 2009-04-21 | Applied Materials, Inc. | Conductive pad design modification for better wafer-pad contact |
US7247558B2 (en) * | 2004-12-03 | 2007-07-24 | Novellus Systems, Inc. | Method and system for electroprocessing conductive layers |
US7655565B2 (en) * | 2005-01-26 | 2010-02-02 | Applied Materials, Inc. | Electroprocessing profile control |
US20060169674A1 (en) * | 2005-01-28 | 2006-08-03 | Daxin Mao | Method and composition for polishing a substrate |
TW200727356A (en) * | 2005-01-28 | 2007-07-16 | Applied Materials Inc | Tungsten electroprocessing |
US20060234499A1 (en) * | 2005-03-29 | 2006-10-19 | Akira Kodera | Substrate processing method and substrate processing apparatus |
US20060219663A1 (en) * | 2005-03-31 | 2006-10-05 | Applied Materials, Inc. | Metal CMP process on one or more polishing stations using slurries with oxidizers |
US7427340B2 (en) * | 2005-04-08 | 2008-09-23 | Applied Materials, Inc. | Conductive pad |
US20060228934A1 (en) * | 2005-04-12 | 2006-10-12 | Basol Bulent M | Conductive materials for low resistance interconnects and methods of forming the same |
US20060249394A1 (en) * | 2005-05-05 | 2006-11-09 | Applied Materials, Inc. | Process and composition for electrochemical mechanical polishing |
US20060249395A1 (en) * | 2005-05-05 | 2006-11-09 | Applied Material, Inc. | Process and composition for electrochemical mechanical polishing |
US20060252254A1 (en) * | 2005-05-06 | 2006-11-09 | Basol Bulent M | Filling deep and wide openings with defect-free conductor |
US20080029400A1 (en) * | 2005-05-13 | 2008-02-07 | Stephen Mazur | Selective electroplating onto recessed surfaces |
US20070014958A1 (en) * | 2005-07-08 | 2007-01-18 | Chaplin Ernest R | Hanger labels, label assemblies and methods for forming the same |
US7264539B2 (en) * | 2005-07-13 | 2007-09-04 | Micron Technology, Inc. | Systems and methods for removing microfeature workpiece surface defects |
US7851222B2 (en) * | 2005-07-26 | 2010-12-14 | Applied Materials, Inc. | System and methods for measuring chemical concentrations of a plating solution |
US7438626B2 (en) * | 2005-08-31 | 2008-10-21 | Micron Technology, Inc. | Apparatus and method for removing material from microfeature workpieces |
US7326105B2 (en) * | 2005-08-31 | 2008-02-05 | Micron Technology, Inc. | Retaining rings, and associated planarizing apparatuses, and related methods for planarizing micro-device workpieces |
US7294049B2 (en) * | 2005-09-01 | 2007-11-13 | Micron Technology, Inc. | Method and apparatus for removing material from microfeature workpieces |
US7416975B2 (en) | 2005-09-21 | 2008-08-26 | Novellus Systems, Inc. | Method of forming contact layers on substrates |
US20070111523A1 (en) * | 2005-11-17 | 2007-05-17 | Ismail Emesh | Process for conditioning conductive surfaces after electropolishing |
US20070135024A1 (en) * | 2005-12-08 | 2007-06-14 | Itsuki Kobata | Polishing pad and polishing apparatus |
US20070153453A1 (en) * | 2006-01-05 | 2007-07-05 | Applied Materials, Inc. | Fully conductive pad for electrochemical mechanical processing |
US20070170066A1 (en) * | 2006-01-06 | 2007-07-26 | Beaudry Christopher L | Method for planarization during plating |
US7550070B2 (en) * | 2006-02-03 | 2009-06-23 | Novellus Systems, Inc. | Electrode and pad assembly for processing conductive layers |
US20070218587A1 (en) * | 2006-03-07 | 2007-09-20 | Applied Materials, Inc. | Soft conductive polymer processing pad and method for fabricating the same |
US7485561B2 (en) * | 2006-03-29 | 2009-02-03 | Asm Nutool, Inc. | Filling deep features with conductors in semiconductor manufacturing |
US7625814B2 (en) * | 2006-03-29 | 2009-12-01 | Asm Nutool, Inc. | Filling deep features with conductors in semiconductor manufacturing |
US20070235344A1 (en) * | 2006-04-06 | 2007-10-11 | Applied Materials, Inc. | Process for high copper removal rate with good planarization and surface finish |
US20070251832A1 (en) * | 2006-04-27 | 2007-11-01 | Applied Materials, Inc. | Method and apparatus for electrochemical mechanical polishing of cu with higher liner velocity for better surface finish and higher removal rate during clearance |
US20070254485A1 (en) * | 2006-04-28 | 2007-11-01 | Daxin Mao | Abrasive composition for electrochemical mechanical polishing |
US7422982B2 (en) * | 2006-07-07 | 2008-09-09 | Applied Materials, Inc. | Method and apparatus for electroprocessing a substrate with edge profile control |
US8500985B2 (en) * | 2006-07-21 | 2013-08-06 | Novellus Systems, Inc. | Photoresist-free metal deposition |
US7732329B2 (en) * | 2006-08-30 | 2010-06-08 | Ipgrip, Llc | Method and apparatus for workpiece surface modification for selective material deposition |
US7754612B2 (en) * | 2007-03-14 | 2010-07-13 | Micron Technology, Inc. | Methods and apparatuses for removing polysilicon from semiconductor workpieces |
US20080237048A1 (en) * | 2007-03-30 | 2008-10-02 | Ismail Emesh | Method and apparatus for selective electrofilling of through-wafer vias |
US8012000B2 (en) * | 2007-04-02 | 2011-09-06 | Applied Materials, Inc. | Extended pad life for ECMP and barrier removal |
US20080293343A1 (en) * | 2007-05-22 | 2008-11-27 | Yuchun Wang | Pad with shallow cells for electrochemical mechanical processing |
CN100582314C (zh) * | 2007-09-10 | 2010-01-20 | 厦门致力金刚石工具有限公司 | 抛镀机 |
US20090065365A1 (en) * | 2007-09-11 | 2009-03-12 | Asm Nutool, Inc. | Method and apparatus for copper electroplating |
US20090078579A1 (en) * | 2007-09-20 | 2009-03-26 | Weibezahn Karl S | Systems And Methods For Electroplating Embossed Features On Substrates |
US20090090634A1 (en) * | 2007-10-03 | 2009-04-09 | Sifco Selective Plating | Method of plating metal onto titanium |
CN101435100B (zh) * | 2007-11-16 | 2011-04-06 | 联华电子股份有限公司 | 流体区域控制装置及其操作方法 |
AU2009236677B2 (en) * | 2008-04-14 | 2012-11-22 | Hemlock Semiconductor Corporation | Manufacturing apparatus for depositing a material and an electrode for use therein |
CN102047751B (zh) * | 2008-04-14 | 2014-01-29 | 赫姆洛克半导体公司 | 用于沉积材料的制造设备和其中使用的电极 |
EP2266368B1 (en) * | 2008-04-14 | 2018-03-28 | Hemlock Semiconductor Operations LLC | Manufacturing apparatus for depositing a material on an electrode for use therein |
US7884016B2 (en) * | 2009-02-12 | 2011-02-08 | Asm International, N.V. | Liner materials and related processes for 3-D integration |
US8168540B1 (en) | 2009-12-29 | 2012-05-01 | Novellus Systems, Inc. | Methods and apparatus for depositing copper on tungsten |
US9960312B2 (en) | 2010-05-25 | 2018-05-01 | Kurt H. Weiner | Apparatus and methods for fast chemical electrodeposition for fabrication of solar cells |
US8343327B2 (en) | 2010-05-25 | 2013-01-01 | Reel Solar, Inc. | Apparatus and methods for fast chemical electrodeposition for fabrication of solar cells |
US8496511B2 (en) * | 2010-07-15 | 2013-07-30 | 3M Innovative Properties Company | Cathodically-protected pad conditioner and method of use |
US9249521B2 (en) | 2011-11-04 | 2016-02-02 | Integran Technologies Inc. | Flow-through consumable anodes |
CN102744674B (zh) * | 2012-07-26 | 2016-10-26 | 上海华虹宏力半导体制造有限公司 | 化学机械研磨设备 |
GB2512056B (en) | 2013-03-18 | 2018-04-18 | Spts Technologies Ltd | Electrochemical deposition chamber |
US10385471B2 (en) | 2013-03-18 | 2019-08-20 | Spts Technologies Limited | Electrochemical deposition chamber |
CN103938257A (zh) * | 2014-05-08 | 2014-07-23 | 中国科学院宁波材料技术与工程研究所 | 多用途电化学池装置及电镀和分析方法 |
CN104096932B (zh) * | 2014-07-09 | 2016-08-03 | 清华大学深圳研究生院 | 一种电化学微加工电极的制备方法及制备装置 |
US9873180B2 (en) * | 2014-10-17 | 2018-01-23 | Applied Materials, Inc. | CMP pad construction with composite material properties using additive manufacturing processes |
US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
KR20240015167A (ko) | 2014-10-17 | 2024-02-02 | 어플라이드 머티어리얼스, 인코포레이티드 | 애디티브 제조 프로세스들을 이용한 복합 재료 특성들을 갖는 cmp 패드 구성 |
WO2016130548A1 (en) | 2015-02-10 | 2016-08-18 | Arcanum Alloy Design, Inc. | Methods and systems for slurry coating |
TWM522954U (zh) * | 2015-12-03 | 2016-06-01 | 財團法人工業技術研究院 | 電沉積設備 |
US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
WO2017201418A1 (en) | 2016-05-20 | 2017-11-23 | Arcanum Alloys, Inc. | Methods and systems for coating a steel substrate |
US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
WO2019032286A1 (en) | 2017-08-07 | 2019-02-14 | Applied Materials, Inc. | ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME |
JP6995139B2 (ja) | 2017-11-30 | 2022-01-14 | 三菱電機株式会社 | めっき装置およびめっき方法 |
CN112654655A (zh) | 2018-09-04 | 2021-04-13 | 应用材料公司 | 先进抛光垫配方 |
JP7183111B2 (ja) * | 2019-05-17 | 2022-12-05 | 株式会社荏原製作所 | めっき方法、めっき用の不溶性アノード、及びめっき装置 |
US20220220628A1 (en) * | 2021-01-13 | 2022-07-14 | Corrdesa, LLC | Electrochemical treatment system |
US11878389B2 (en) | 2021-02-10 | 2024-01-23 | Applied Materials, Inc. | Structures formed using an additive manufacturing process for regenerating surface texture in situ |
CN113579929B (zh) * | 2021-09-26 | 2021-12-10 | 江苏芝麻工具有限公司 | 一种云石机用金属压料板自动加工装置及方法 |
CN114905102A (zh) * | 2022-06-01 | 2022-08-16 | 南京工业职业技术大学 | 一种以多孔材料为载体的微细圆柱电极的电解装置及方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3595089A (en) | 1969-09-23 | 1971-07-27 | Frank J Jirik | Rotary grain sampler device |
DE2008664A1 (en) | 1970-02-25 | 1971-09-09 | Licentia Gmbh | Galvanically or chemically assisted mechanic |
US3779887A (en) * | 1972-03-14 | 1973-12-18 | Sifco Ind Inc | Vibratory applicator for electroplating solutions |
US3959089A (en) * | 1972-07-31 | 1976-05-25 | Watts John Dawson | Surface finishing and plating method |
US4610772A (en) | 1985-07-22 | 1986-09-09 | The Carolinch Company | Electrolytic plating apparatus |
US5024735A (en) | 1989-02-15 | 1991-06-18 | Kadija Igor V | Method and apparatus for manufacturing interconnects with fine lines and spacing |
US5171412A (en) | 1991-08-23 | 1992-12-15 | Applied Materials, Inc. | Material deposition method for integrated circuit manufacturing |
JP3200468B2 (ja) | 1992-05-21 | 2001-08-20 | 日本エレクトロプレイテイング・エンジニヤース株式会社 | ウエーハ用めっき装置 |
DE4324330C2 (de) | 1992-08-01 | 1994-11-17 | Atotech Deutschland Gmbh | Verfahren zum elektrolytischen Behandeln von insbesondere flachem Behandlungsgut, sowie Anordnung, insbesondere zur Durchführung dieses Verfahrens |
EP0696495B1 (en) | 1994-08-09 | 1999-10-27 | Ontrak Systems, Inc. | Linear polisher and method for semiconductor wafer planarization |
US5593344A (en) | 1994-10-11 | 1997-01-14 | Ontrak Systems, Inc. | Wafer polishing machine with fluid bearings and drive systems |
US5755859A (en) | 1995-08-24 | 1998-05-26 | International Business Machines Corporation | Cobalt-tin alloys and their applications for devices, chip interconnections and packaging |
KR100217006B1 (ko) * | 1995-10-17 | 1999-09-01 | 미따라이 하지메 | 에칭 방법, 이 에칭 방법을 사용한 반도체 소자의 제조 방법 및 이 에칭 방법의 실시에 적합한 장치 |
RU2077611C1 (ru) * | 1996-03-20 | 1997-04-20 | Виталий Макарович Рябков | Способ обработки поверхностей и устройство для его осуществления |
US5933753A (en) | 1996-12-16 | 1999-08-03 | International Business Machines Corporation | Open-bottomed via liner structure and method for fabricating same |
US5807165A (en) | 1997-03-26 | 1998-09-15 | International Business Machines Corporation | Method of electrochemical mechanical planarization |
US5930669A (en) * | 1997-04-03 | 1999-07-27 | International Business Machines Corporation | Continuous highly conductive metal wiring structures and method for fabricating the same |
JP3462970B2 (ja) * | 1997-04-28 | 2003-11-05 | 三菱電機株式会社 | メッキ処理装置およびメッキ処理方法 |
US5833820A (en) | 1997-06-19 | 1998-11-10 | Advanced Micro Devices, Inc. | Electroplating apparatus |
US6004880A (en) * | 1998-02-20 | 1999-12-21 | Lsi Logic Corporation | Method of single step damascene process for deposition and global planarization |
US6143155A (en) * | 1998-06-11 | 2000-11-07 | Speedfam Ipec Corp. | Method for simultaneous non-contact electrochemical plating and planarizing of semiconductor wafers using a bipiolar electrode assembly |
-
1998
- 1998-12-01 US US09/201,929 patent/US6176992B1/en not_active Expired - Lifetime
-
1999
- 1999-11-02 EP EP99971474A patent/EP1129237A2/en not_active Withdrawn
- 1999-11-02 WO PCT/US1999/025656 patent/WO2000026443A2/en active Application Filing
- 1999-11-02 JP JP2000579810A patent/JP2002528649A/ja not_active Withdrawn
- 1999-11-02 CN CNB998141267A patent/CN1214133C/zh not_active Expired - Fee Related
- 1999-11-02 KR KR1020017005603A patent/KR100780071B1/ko not_active IP Right Cessation
- 1999-11-02 AU AU14617/00A patent/AU1461700A/en not_active Abandoned
- 1999-11-09 TW TW088118951A patent/TW523558B/zh not_active IP Right Cessation
-
2000
- 2000-06-29 US US09/607,567 patent/US6676822B1/en not_active Expired - Fee Related
- 2000-12-14 US US09/738,561 patent/US6402925B2/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107012489A (zh) * | 2016-01-06 | 2017-08-04 | 应用材料公司 | 用于在电化学沉积期间遮蔽工件特征的系统和方法 |
CN107012489B (zh) * | 2016-01-06 | 2021-05-07 | 应用材料公司 | 用于在电化学沉积期间遮蔽工件特征的系统和方法 |
Also Published As
Publication number | Publication date |
---|---|
US6676822B1 (en) | 2004-01-13 |
WO2000026443A3 (en) | 2000-10-12 |
TW523558B (en) | 2003-03-11 |
CN1329681A (zh) | 2002-01-02 |
US6176992B1 (en) | 2001-01-23 |
JP2002528649A (ja) | 2002-09-03 |
WO2000026443A2 (en) | 2000-05-11 |
US20010042690A1 (en) | 2001-11-22 |
KR20010092442A (ko) | 2001-10-25 |
AU1461700A (en) | 2000-05-22 |
KR100780071B1 (ko) | 2007-11-29 |
EP1129237A2 (en) | 2001-09-05 |
US6402925B2 (en) | 2002-06-11 |
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