CN1259764A - 使用柔性环氧树脂将散热器直接固定到芯片载体 - Google Patents

使用柔性环氧树脂将散热器直接固定到芯片载体 Download PDF

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CN1259764A
CN1259764A CN99120995A CN99120995A CN1259764A CN 1259764 A CN1259764 A CN 1259764A CN 99120995 A CN99120995 A CN 99120995A CN 99120995 A CN99120995 A CN 99120995A CN 1259764 A CN1259764 A CN 1259764A
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substrate
chip
flexible
epoxy
radiator
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CN1148792C (zh
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托马斯·莫兰·卡纳尼
迈克·安东尼·盖尼思
平·匡·塞托
候塞因·肖卡土拉哈
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International Business Machines Corp
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Abstract

使用柔性环氧树脂将散热器固定到半导体芯片上以改进散热性能的方法以及使用该方法制成的芯片载体组件、互连结构。这种结构特别适用于CQFP、CBGA、CCGA、CPGA、TBGA、PBGA、DCAM、MCM－L、单层陶瓷、以及其它芯片组件,并且适用于将倒装芯片固定到柔性的或刚性的有机材料电路板。柔性环氧树脂的杨氏模量小于100,000psi,其玻璃转换温度小于25℃,比普通的硅粘结剂的强度大得多,并且不会使组件或电路板沾染上硅。

Description

使用柔性环氧树脂将散热器直接固定到芯片载体
本申请是1995年4月27日申请的发明名称为“使用柔性环氧树脂将散热器直接固定到芯片载体”、申请号为95105028.1的发明专利申请的分案申请。
本发明涉及的领域是电子元件的排热器和散热器以及将这种排热器和散热器固定到电子元件上的方法。
下面的段落旨在加进参考引用的内容，不是为了寻求对所述现有技术的承认。
倒装芯片利用热油实现和散热器的热连接，如Jarvela的美国专利No.4,000,509所述。一般来说，要将散热器(如：盖帽、散热器板、带叶片的散热器、或者液冷的冷却板)机械地连接到芯片载体组件或电路板上，以使固定到组件或电路板上的倒装芯片和散热器的一个表面之间留有一个很小的间隙。这个间隙中充有热油，如硅油，热油中可填充高热传导材料(如银)或陶瓷材料(如氧化铝)，从而在芯片和散热器之间提供一个高质量的热传导通路。
环氧树脂已用于将半导体芯片固定某些基片上。在Dessai的美国专利5,159,535中，使用环氧树脂将半导体计算机芯片的背面连接到一种铜包覆殷钢(铜-殷钢-铜)插件(interposer)中，该插件的热膨胀系数(CTE)介于半导体的热膨胀系数和玻璃纤维环氧树脂电路板的热膨胀系数之间，该插件是通过焊接固定到该电路板上的。另外，在Desai的美国专利中，如果制造电路板的材料(如殷钢)的热膨胀系数非常接近半导体芯片的热膨胀系数，则可使用导热环氧树脂把芯片直接固定到电路板上。类似地，Anschel的美国专利No.4,914,551公开了使用环氧树脂将半导体芯片固定到一种由碳化硅(SiC)、氮化铝(AlC)、或铜-殷钢-铜制成的散热器上的方法，其中的环氧树脂中填充金刚石颗粒，以使得诸热膨胀系数差不大于每摄氏度百万分之二(ppm/℃)。下述材料的热膨胀系数(以ppm/℃为单位)分别是：Si为2.6、SiC为2.6、AlN为4.6、殷钢为2、铜-殷钢-铜为3-6、环氧树脂为50-80、玻璃纤维-环氧树脂为11-18、填充熔融石英的环氧树脂为5-7。在“IBM技术公开快讯(IBM Technical Disclosure Bulletin)”第32卷第4A期(1989年9月)中G.Schrottke和D.J.Willson的文章“直接芯片固定电路的散热(Removal of Heat Form Direct Chip AttachCircuitry)”公开了一种方法，它使用粘结剂将硅芯片固定到铜-殷钢-铜散热器上。在授与Nitsch的美国专利No.5,168,430的图2中表示了一个粘结到一个散热器上的混合电路结构3，Bennett的欧洲专利申请93104433.3公开了一种使用导电的环氧树脂将半导体芯片固定到引线框架上的方案。
环氧树脂已用于包覆倒装芯片的连接，如Beckham的美国专利No.4,604,644、Christie的美国专利No.4,999,699和No.5,089,440所述，以减小在C4(可控塌陷芯片连接)组件中的应力。C4组件如美国专利No.3,458,925所示。用于这些目的的环氧树脂是公知的，如Itoh的美国专利4,701,482所述。一般来说，这样一些环氧树脂的玻璃转换(glass transition)温度(Tg)约为140-150℃，杨氏模量约为1,000,000psi(磅/英寸2)或更大。已经采用环氧树脂来转移模制过程或注模过程的热量以形成电子元件，如QFP(四芯线平直组件)、DIP(双线组件)、和其它塑料封装组件。诸如陶瓷四芯线平直组件之类的陶瓷芯片载件组件一般具有由环氧树脂连在一起的两个陶瓷部分。可以使用环氧树脂、或者最好使用热熔塑胶来包覆ECA(导电粘结剂)芯片附件。
可使用环氧树脂将诸如铝(Al)或铜(Cu)之类的散热器粘结到塑料封装的组件上，其中的铝可通过铬酸盐转化作用涂敷或氧化，其中的铜可用镍(Ni)涂敷。铝的热膨胀系数CTE是23ppm/℃，铜的热膨胀系数CTE是17ppm/℃。对于较高温度下的应用，使用陶瓷芯片组件，并且使用硅粘结剂将散热器粘结到组件的顶部，或者通过螺丝或通过夹具机械地固定散热器。“Ablebond P1-897(9/93)”的一个技术数据表(A technical data sheet for Ablebond P1-897 of 9/93)建议：使用这种材料将大型的芯片固定到一个银涂敷的铜引线框架上。“Prima-Bond TM EG7655”’的一个产品数据表(A product data sheet for Prima-Bond TMEG 7655)建议：使用这种材料“粘结具有相差极大的热膨胀系数的那些材料”(即，氧化铝和铝、硅和铜、等等)。
这些发明可应用到陶瓷顶部组件中，如CQFP(陶瓷的四芯线平直组件)，也可应用到倒装芯片载体组件中，例如：无盖的CQFP；TBGA(TAB球格阵列)、TAB(带自动粘结)组件，如上述的Desai的专利、以及Clementi的美国专利No.4,681,654、和Flynn的美国专利No.5,203,075所述；Behum描述过的以及Hoebner的美国专利申请序列号08/144,981中描述的CBGA(陶瓷球格阵列)组件；White在美国专利申请序列号08/178,944中描述的DCAM(直接固定的芯片组件)；以及公知的CPGA(陶瓷针格阵列)组件。
上述所引用的文件在此引作为本发明的参考文件，以便能对本发明提供足以实现的公开并支持本申请人依据法律所能够享有的权利要求。
本发明的一个目的是改善倒装芯片散热的热效率以提高可靠性，并且有可能增加热能耗散以得到更高的器件密度。
本发明的另一个目的是为公知的环氧树脂提供一种新的用途。
本发明的再一个目的是提供一种改进的电子组件，它从高热密度计算机芯片上耗散的热量比从前可能作到的更大。
本发明的最后一个目的是提供一种计算机系统，和先前的实际情况相比，它使用的芯片较少，但器件密度更高且操作更迅速。
为了实现本发明的这些目的，将铝或铜的散热器或散热器板直接粘结到半导体倒装芯片或陶瓷QFP的背侧。本申请人已经发现，可从使用玻璃转换温度低于室温的一种薄层高柔性环氧树脂直接把散热器粘结到倒装芯片或陶瓷盖帽的背侧，这种粘结即使经下述热循环试验后依旧是很牢固的：1500次从0℃到100℃的循环、400次从-25℃到125℃的循环、以及300次从-40℃到140℃的循环；或者在130℃连续加热1000小时之后。
图1表示用柔性环氧树脂粘结到CQFP的一个铝散热器，以说明本发明的一个实施例；
图2表示用柔性环氧树脂粘结到在一个无盖帽的CQFP中的半导体倒装芯片上的一个铝散热器，以说明本发明的另一个实施例；
图3表示用柔性环氧树脂连接到CPGA中的一个半导体倒装芯片上的铝散热器，以说明本发明的另一个实施例；
图4表示和图3类似的另一个实施例，其中的铝散热器是通过柔性环氧树脂粘结到CBGA或PBGA的半导体倒装芯片上的；
图5表示用柔性环氧树脂粘结到带球格阵列组件的半导体芯片上的一个铜散热器板，以说明本发明的另一个实施例；
图6表示用柔性环氧树脂粘结到一个直接芯片固定有机载体的半导体芯片上的铝散热器，以说明本发明的另一个实施例；
图7表示一个热性能得以提高的信息处理系统，其热性能是通过使用柔性环氧树脂将散热器粘结到高能量密度电子元件的A/N陶瓷的和/或硅的表面上而得到的。
典型的环氧树脂的玻璃转换温度Tg约为140-150℃，但本发明中使用的柔性环氧树脂的Tg低于约25℃，优选的Tg低于10℃，并且最好的是Tg低于0℃。另外，普通环氧树脂的杨氏模量在1,000,000psi(磅/英寸2)左右，但在本发明中使用的柔性环氧树脂的杨氏模量低于100,000psi(磅/英寸2)，优选的低于50,000psi(磅/英寸2)，甚至低于20,000psi(磅/英寸2)则更好。从AI Technologies公司(地址是：9#，Princess Road、Lawrencevill，N.J.08648)可得到一种名称为EG7655的两部分型的柔性环氧树脂，其Tg约为-25℃，杨氏模量小于约20,000psi(磅/英寸2)左右。单一部分的名称为ABLEBON DR P1-8971的柔性环氧树脂由Ablestick Lab-oratories销售(其地址为：20021#，Susana Road，RanchoDominguez，CA90221)，其Tg约为5℃，其杨氏模量小于50,000psi(磅/英寸2)左右。
在图1中，CQFP组件由上、下两个预制的烧结陶瓷片100、102(最好是铝-氮陶瓷)制成。使用例如一种普通的模片固定环氧树脂108将半导体芯片106(最好是硅芯片)粘结到该平直组件的上半片100上，并且该芯片被线(112)粘结到引线框架104上。使用例如普通的环氧树脂110、114将上半片100粘结到下半片102上。空腔116一般来说是空的，但也可包含一种不导电但传热的物质(例如硅油)。然后，使用柔性环氧树脂薄层120将一个铝散热器118(较佳地通过阳极氧化作用或者更好地通过铬酸盐转化作用来涂敷)粘结到该陶瓷组件的顶部。
Al-N的热膨胀系数CTE约为4.6ppm/℃，铝散热器的热膨胀系数CTE约为23.6ppm/℃，这导致热膨胀系数差为19ppm/℃。陶瓷顶部是相对平滑的表面，若在组件和散热器之间的环氧树脂发生脱层或断裂，则使从芯片向外的热传输大大降低。当对这样的结构实施热循环试验时，普通的环氧树脂将迅速失效(脱层)。硅基粘结剂的玻璃转换温度Tg小于25℃，其杨氏模量小于20,000psi(磅/英寸2)。但在结构上，这种粘结剂粘结的强度大约是柔性环氧树脂的粘结强度的1/3-1/2。还有，硅粘结剂的组分有从掺杂薄涂敷材料的表面迁移出来的趋势。本申请人发现，柔性环氧树脂(如ABLE-BOND Pi-8971和EG7655)可满足这个试验的热循环要求。
另外，可以用环氧树脂密封剂(粘块顶部)代替上片盖帽102来保护线粘结芯片。环氧树脂可刚好盖住芯片和线粘结点，或者环氧树脂可延伸到安装该组件的电路板。还有，可以用有机材料(如玻璃纤维-环氧树脂，或铜和聚酰亚胺箔的叠层)来代替上半片陶瓷100。
图2表示没有上半片陶瓷的另一种CQFP148。半导体倒装芯片块150按周边排行的或栅格阵列的C4接点154固定到长方形的单层陶瓷芯片载体152上，C4接点154从芯片上的电触点延伸至载体152上的电触点。另外，可通过易熔焊料凸块把芯片隆起部分固定到载体上的触点上，这些易熔焊料凸块是通过电镀、焊料注入、或从移画印花过程(decal)的转移而沉积的。将例如鸥翼形引线156的引线沿着和基片159进行表面安装连接的各边缘(一般是QFP的所有四个边缘)焊接到(158)铜焊盘上。另外，可将引线的底端在组件下方弯成“J”形，或者甚至点成直接向下的。用环氧树脂160包覆接点154，并且最好用环氧树脂162包覆引线。最好涂敷一个环氧树脂涂层164来保护上层陶瓷线路(一种敷形涂敷层)。使用柔性环氧树脂166将散热器164固定到芯片150的背面。对于底面尺寸比芯片大得多的散热器，通过用柔性环氧树脂或一般的环氧树脂把散热器粘结到168处的敷形涂敷层，可以得到改进的结构强度。
硅Si的热膨胀系数CTE为2.6ppm/℃左右，散热器的铝Al的热膨胀系数CTE为23.6ppm/℃左右，这导致得到热膨胀系数差为21ppm/℃。芯片的背部极其光滑，所以导致机械粘结的效果很差，而且在芯片和散热器之间的环氧树脂的任何脱层或断裂都将使芯片的热转移量大大降低。当让该结构经受热循环试验时，普通的环氧树脂迅速失效(脱层)。硅基粘结剂的玻璃转换温度Tg小于25℃，杨氏模量小于20,000psi(磅/英寸2)。但在结构上，这种粘结的强度约为柔性环氧树脂的强度的1/3-1/2。另外，硅粘结剂的组分有从掺杂了薄涂敷材料的掺杂表面迁移出来的趋势。本申请人发现，柔性环氧树脂(例如，ABLEBOND Pi-8971和EG7655)满足这种试验的热循环要求。
组件148的引线156固定到基片159(一种玻璃纤维-环氧树脂电路板或铜和聚酰亚胺膜叠层的柔性电路板)的导电焊盘(最好为铜)170上。
图3表示一个CPGA(陶瓷针格阵列组件)200。半导体倒装芯片块202的前侧(底部)通过周边排行的或栅格阵列的接点206(最好是C4接点或ECA接点)固定到一个长方形的陶瓷芯片载体204(单层或多层载体，如图中所示)上。一个引针阵列208在穿过基片214(如玻璃纤维-环氧树脂或铜与聚酰亚胺膜的柔性叠层)延伸的一些径涂覆的通孔(PTH)的两端都波焊到(210)铜焊盘212上。用环氧树脂220包覆接点206，并可把环氧树脂的敷形涂敷层222沉积在芯片上。使用柔性环氧树脂226将散热器224固定到芯片202的背侧。
图4表示和图3的CPGA类似的BGA(球格阵列)组件240。基片240可以是陶瓷的CBGA或塑料的PBGA，并且可以是单层的或多层的。同样，利用柔性环氧树脂244将散热器246固定到倒装芯片248上。
图5表示TBGA组件250。通过一些接点258或通过SATT(焊料固定带工艺)技术，将倒装芯片252的底部固定到一个柔性芯片载体基片256(一般是一个或多个带有一定图案的铜层和聚酰亚胺层的叠层)的铜焊盘254上；其中这些接点258是通过C4、热压粘结、或激光焊接形成的。通过激光焊接、热压粘结、或者通过在铜焊盘上沉积易熔焊料并且进行回流使焊料球就位，将焊料球258(最好90％的铅Pb，10％的锡Sn)固定到柔性带256的铜焊盘260上。长方形的金属框架262(如铝Al，或者最好是镀镍Ni的铜)通过粘结剂(最好是环氧树脂)264固定到柔性基片上。散热器270通过粘结剂(最好是环氧树脂)272固定到该框架262上，并通过柔性环氧树脂274固定到芯片252上。可以通过阳极氧化处理或铬酸盐转化作用对散热器进行铝处理，或者最好对散热器作镀镍Ni的铜处理。
通过在铜焊盘282上沉积焊膏(最好37％的铅Pb和63％的锡Sn)、把组件放置在基片280上，同时让焊料球位于焊膏上、然后加热该结构直到焊膏变为熔融状态形成焊料接点284为止，从而将组件250固定到基片280(如玻璃纤维-环氧树脂或上述的柔性叠层)上。另外，可用热熔塑胶或热固胶包覆的ECA286来取代球258和焊料284，并通过加热和加压将这种ECA固定到焊盘282上。
硅Si的热膨胀系数CTE约为2.6ppm/℃，铜散热器的热膨胀系数CTE约为17ppm/℃，其导致热膨胀系数差为14.4ppm/℃。同样，芯片的背部仍旧是极其光滑的，这因而导至一种脆弱的机械粘结，芯片和散热器间的环氧树脂的任何脱层或断裂，都造成从芯片转移出的热量大大减少。当这种结构经受热循环试验时，普通的环氧树脂会迅速失效(脱层)。在提供这些材料之间接合的可靠性所要求的热循环试验期间，即1500次从0到100℃的循环；400次从-25℃到125℃的循环；然后300次，从-40℃到140℃的循环，硅基粘结剂也产生脱层。本申请人发现，柔性环氧树脂(如ABLE-BOND8971和EG7655)能可靠地满足这个试验的热循环要求。
图6表示一个DCAM组件300。倒装芯片302固定到一个多层的玻璃纤维环氧树脂基片304上。沉积易熔焊料306(通过HASL、在芯片上的焊料、焊料注入，通过从不锈钢移画印花过程(stainlesssteel decal)的转移)以便在位于芯片底部的高温焊料凸块308和位于基片上表面的铜焊盘310之间进行连接。确定铜焊盘312的位置，使其能连接到位于互连的结构(图2和5中的有机材料电路板)上的铜焊盘上。可以在焊盘312提供焊料314以使进行回流焊接固定。使用柔性环氧树脂322将散热器320固定到芯片302的背侧。对于延伸长度明显超过芯片尺寸极限的散热器，通过使用柔性环氧树脂或其它公知的环氧树脂包覆在位于324处的散热器和基片304之间，就可以改善结构强度。
图7表示本发明的信息处理系统350的一个计算机网络实施例。计算机系统352和354通过光缆或电信号电缆356联网在一起。系统352和354分别具有CPU(中央处理单元)组件358、360和存贮器组件362、364。这些组件使用柔性环氧树脂366-372把散热器固定到组件上以便可在较高功率下操作，从而提高整个信息处理系统的性能。每个系统中的组件都固定到一个或多个电连接结构374、376上。这些连接结构又连接到如电池、变压器、或电源软线的电源378、380上，这些连接结构还可以连到，如磁盘驱动器、其它一些连接结构的其它的计算机设备382上。一个或多个光或电的电缆384或电缆连接器固定到这些连接结构上，以便借助于诸如键盘、CRT、调制解调器、传感器、电机等等的计算机外围设备386提供数据的输入和输出。
虽然图中没有表示出来，但本发明还包括多芯片的组件，多芯片组件在一个或多个芯片上具有各自的散热器，和/或在这样的组件中的多个芯片上具有公用的散热器，或者甚至对于多个组件具有一些公用的散热器。
尽管参照本发明的设备和方法的优选实施例描述了本发明，但本领域的技术人员都应认识到，在不脱离由权利要求书限定的本发明的构思和范围的条件下，还可进行很多变化。

Claims (17)

1.一种芯片载体组件的制造方法，包括步骤：
在一个第一基片的第一侧上的一个固定位置安装一个半导体芯片；
在散热器和所述第一基片的第二侧上的一个表面之间沉积未完全固化的柔性环氧树脂；
将该散热器和芯片压紧在一起；以及
加热该组件以固化柔性环氧树脂。
2.如权利要求1的方法，其特征在于所述第一基片是陶瓷的。
3.如权利要求1的方法，其特征在于沉积柔性环氧树脂的步骤包括：沉积玻璃转换温度小于25℃的柔性环氧树脂，其25℃的杨氏模量小于100,000psi。
4.如权利要求1的方法，其特征在于还包括如下步骤：将半导体芯片粘结到位于基片所述第一侧的一个基片表面。
5.如权利要求1的方法，其特征在于还包括如下步骤：
将半导体芯片粘结到一个第二基片上；
将所述第一和所述第二基片粘结到一起以便将所述芯片封于两个基片之间。
6.一种制作互连结构的方法，包括步骤：
将一半导体芯片的一个第一表面电连接到一个第一基片；
在所述半导体芯片的一个第二表面和一散热器之间沉积未完全固化的柔性环氧树脂；
将散热器和芯片压紧在一起；
升高组件的温度以固化柔性环氧树脂；
定位所述第一基片的一个第二表面，使其与一个较大的第二基片的一个表面平行接触；以及
在用于所述第一基片的电及机械连接的装置和用于所述第二基片的电及机械连接的相对装置之间进行连接，以形成一个互连结构。
7.如权利要求6的方法，其特征在于沉积柔性环氧树脂的步骤包括：沉积玻璃转换温度小于25℃、并且25℃时的杨氏模式小于100,00psi的柔性环氧树脂。
8.一种制作互连结构的方法，包括步骤：
在一个第一基片的一个第一侧上的一个固定位置安装一个半导体芯片；
在一散热器和所述第一基片的一个第二侧上的一个表面之间沉积未完全固化的柔性环氧树脂；
将散热器和芯片压紧在一起；
加热该组件以固化柔性环氧树脂；
在芯片的金属触点和一个第二基片的金属触点之间进行电连接。
9.如权利要求8的方法，其特征在于进一步还包括为所述第一基片选择陶瓷材料的步骤。
10.如权利要求8的方法，其特征在于沉积柔性环氧树脂的步骤还包括：沉积玻璃转换温度小于25℃、且在25℃时的杨氏模量小于100,000psi的柔性环氧树脂。
11.一种产生信息处理系统的方法，包括：
将中央处理单元的一个半导体芯片的一个第一表面电连接到一个第一基片；
在该半导体芯片的一个第二表面和一散热器之间沉积未完全固化的柔性环氧树脂；
将散热器和芯片压紧在一起；
升高组件的温度以固化柔性环氧树脂；
定位所述第一基片的一个第二表面，使其与一个较大的第二基片的一个平面平行接触；
在用于所述第一基片的电及机械连接的装置和用于所述第二基片的电及机械连接的相对装置之间进行连接，以形成互连结构；
将该互连结构同电源装置以及输入/输出装置连接起来，从而形成一个信息处理系统。
12.如权利要求11的方法，其特征在于沉积柔性环氧树脂的步骤包括：沉积玻璃转换温度小于25℃、并且25℃的杨氏模量小于100,000psi的柔性环氧树脂。
13.一种芯片载体组件，包括：
一个第一基片；
一个定位在所述第一基片的一个第一侧上的半导体芯片；
在所述第一基片的一个第二侧上的所述第一基片的一个表面上的一层柔性环氧树脂；
一个散热器，其一个表面粘结到所述第一基片所述第二侧的表面上；
用于在结构上保持所述散热器、所述芯片、和所述第一基片处在固定的对应位置的装置；以及
用于将芯片电连接到另一个基片的装置。
14.如权利要求13的组件，其特征在于所述第一基片包括陶瓷材料。
15.如权利要求13的组件，其特征在于所述用于在结构上保持散热器和芯片相对于所述第一基片处于固定位置的装置将芯片粘结到所述第一基片的第一侧。
16.如权利要求13的组件，其特征在于所述用于在结构上保持散热器和芯片相对于第一基片处于固定位置的装置包括：
将芯片粘结到一个第二基片的一个第一侧；
将所述第二基片的一个第一侧粘结到所述第一基片的所述第一侧以将芯片封装在所述基片之间。
17.如权利要求13的组件，其特征在于所述柔性环氧树脂的玻璃转换温度小于25℃，并且在25℃时的杨氏模量小于100,000psi。
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