CN1306623C - Method for manufacturing nitride luminous apparatus - Google Patents
Method for manufacturing nitride luminous apparatus Download PDFInfo
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- CN1306623C CN1306623C CNB031501044A CN03150104A CN1306623C CN 1306623 C CN1306623 C CN 1306623C CN B031501044 A CNB031501044 A CN B031501044A CN 03150104 A CN03150104 A CN 03150104A CN 1306623 C CN1306623 C CN 1306623C
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- nitride
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Abstract
The present invention relates to a method for manufacturing a nitride light-emitting device. The present invention mainly uses more than two kinds of metal or alloy as a combination layer. A nitride light-emitting structure grown on a base plate with low thermal conductivity is combined with a base plate with high thermal conductivity, and the base plate with low thermal conductivity is removed by a chemical etching method or a dry etching method or a mechanical polishing method, so the nitride light-emitting structure is replaced on the base plate with high thermal conductivity. Meanwhile, a transparent conductive layer forms ohmic contact with an N type nitride layer so as to improve current distribution greatly and reduce light absorbing effects. Furthermore, light-emitting effects of the light-emitting device can be improved.
Description
Technical field
The invention relates to a kind of method of making nitride-based light emitting device, be meant formation and pressing especially, with the manufacture method of nitride light-emitting structure replacing in the high thermal conductivity coefficient substrate by binder course.
Background technology
The technology of known making nitride-based light emitting device is with aluminium oxide (Al
2O
3) be substrate, carry out building crystal to grow thereon.Based on observation, find that there are some shortcomings in it to practical operation: at first, because substrate is originally as insulation, conductivity is bad, so P type and N type electrode must be placed the same side when making, thereby increase P type and the shared area of N type electrode, and reduce the effective light-emitting zone of crystal grain.Moreover, because the conductivity of P type nitride is all far below N type nitride, and adopt translucent metal conducting layer as ohmic contact layer, though can reach electric current evenly distributes, exist because of the semi-transparent metals conductive layer also, and significantly produce the extinction effect, and reduce luminous efficiency.
Summary of the invention
Because the problems referred to above the present invention proposes a kind of wafer combination technology that utilizes, make the method for nitride-based light emitting device, overcome the shortcoming that known technology is made luminescence component, obtained the effect of multiple progress.Again in view of the aforementioned technical background, because of aluminum oxide substrate is that insulator and thermal conductance ability are not good, the present invention utilizes two or more metal or alloy to be binder course, nitride light-emitting structure and the high thermal conductivity coefficient substrate junction that to grow up on low thermal conductance coefficient substrate by binder course lump together, and remove the low thermal conductivity substrate by chemical method for etching, dry etching or mechanical milling method, and with nitride light-emitting structure transposition on the high thermal conductivity coefficient substrate.
Purpose of the present invention, be to make nitride light-emitting structure epitaxial layer can be formed on high thermal conductivity coefficient and the high conductivity substrate on the one hand, and only finish the vertical stratification that needs single kenel lead, and for example N type electrode or P type electrode, thus the scope of covering light-emitting area reduced widely.On the other hand, also can utilize transparency conducting layer and N type nitration case to form ohmic contact, significantly improve CURRENT DISTRIBUTION, and reduce the extinction effect, to promote the luminous benefit of light-emitting device.
Another object of the present invention is propose a kind of light-emitting device of making in the method with high thermal conductivity coefficient substrate, so device to be applied under the higher electric current the preferable stability of tool.
Another object of the present invention is, proposes a kind of vertical electrode structure, only need the vertical stratification of single kenel lead, so packaging cost reduces significantly.
For clearer understanding objects and advantages of the present invention, specific embodiment is described below with reference to accompanying drawing.
Description of drawings
Fig. 1 is the nitride light-emitting structural representation of the manufacture method embodiment of the nitride-based light emitting device according to the present invention.
Fig. 2 is the high thermal conductivity coefficient substrate schematic diagram of the manufacture method embodiment of the nitride-based light emitting device according to the present invention.
Fig. 3 is that the high thermal conductivity coefficient substrate of the manufacture method embodiment of the nitride-based light emitting device according to the present invention combines schematic diagram with the nitride light-emitting structure.
Fig. 4 is that the nitride light-emitting structure transposition of manufacture method embodiment of the nitride-based light emitting device according to the present invention is in high thermal conductivity coefficient substrate schematic diagram.
Fig. 5 is the schematic diagram of the manufacture method embodiment transparency conducting layer of the nitride-based light emitting device according to the present invention.
Fig. 6 is the manufacture method embodiment N type electrode and the P type electrode schematic diagram of the nitride-based light emitting device according to the present invention.
Fig. 7 is the flow chart of the manufacture method of nitride-based light emitting device according to the present invention.
Among the figure
20 nitride light-emitting structures, 201 first substrates
203 N type crystal layer with nitride, 205 P type crystal layer with nitride
21 first binder courses, 30 second substrates
31 second binder courses, 4 transparency conducting layers
5 N type electrodes, 6 P type electrodes
71 steps 73 that form first binder course form the step of second binder course
The step 77 of 75 combinations forms the step of transparency conducting layer
79 form the step of electrode
Execution mode
Fig. 1 is the nitride light-emitting structural representation of the manufacture method embodiment of the nitride-based light emitting device according to the present invention.The manufacture method of nitride-based light emitting device of the present invention is provided with nitride light-emitting structure 20, comprises: first substrate 201, its material are aluminium oxide (Al
2O
3), N type crystal layer with nitride 203 is epitaxial structure layers, be to grow up and be formed on first substrate 201 with existing crystal technique of heap of stone, P type crystal layer with nitride 205 also is the epitaxial structure layer, it is grown up also is to be same as the used crystal technique of heap of stone of growth N type crystal layer with nitride 203, to be formed on the N type crystal layer with nitride 203.
And for after a while wafer combination, so on the P of nitride light-emitting structure 20 type crystal layer with nitride 205, grow up and form first binder course 21, can select one of them mode of deposition, sputter or plating for use, according to the embodiment of the invention, adopt depositional mode, its preferable material is indium (Indium) tin (Tin) alloy, preferred thickness is 1 micron (μ m), other available material at least one metal for selecting the group that is formed from aluminium (Al), silver (Ag), gold (Au), nickel (Ni), copper (Cu), platinum (Pt), titanium (Ti) and palladium (Pd).
Fig. 2 is the high thermal conductivity coefficient substrate schematic diagram of the manufacture method embodiment of the nitride-based light emitting device according to the present invention.The manufacture method of nitride-based light emitting device of the present invention is provided with second substrate 30 of high thermal conductivity coefficient, and its conductive coefficient is greater than 150W/m-K, and material can be selected wherein any of semiconductor, metal or alloy material for use.According to the embodiment of the invention, second substrate, 30 materials adopt aluminium.
And combine for wafer after a while with nitride light-emitting structure 20, so on second substrate 30, form second binder course 31, the material of second binder course 31 comprises at least one metal of selecting from the group that aluminium (Al), silver (Ag), gold (Au), nickel (Ni), copper (Cu), platinum (Pt), titanium (Ti) and palladium (Pd) are formed, its generation type can be selected the wherein a kind of of deposition, sputter or plating for use.According to the embodiment of the invention, second binder course, 31 preferable materials are aluminium, and generation type is deposition, and preferred thickness is 1 micron (μ m).
Fig. 3 is that the high thermal conductivity coefficient substrate of the manufacture method embodiment of the nitride-based light emitting device according to the present invention combines schematic diagram with the nitride light-emitting structure.High thermal conductivity coefficient second substrate 30 of the manufacture method embodiment of nitride-based light emitting device combines with nitride light-emitting structure 20 according to the present invention, first binder course 21 is combined with second binder course 31, the direction that the representative of arrow indication is exerted pressure, it is by anchor clamps first binder course 21 and second binder course 31 to be fixed, and is pressing each other Face to face.And first binder course 21 is 300 degree Celsius with the preferred temperature value that combines of second binder course 31, and preferable force value is every square centimeter 4 kilogram weight (4kg/cm
2).
Fig. 4 is that the nitride light-emitting structure transposition of manufacture method embodiment of the nitride-based light emitting device according to the present invention is in high thermal conductivity coefficient substrate schematic diagram.By the result of Fig. 3, remove aluminium oxide first substrate 201 of nitride light-emitting structure 20, with the remainder with nitride light-emitting structure 20, transposition and manifests N type crystal layer with nitride 203 simultaneously on high thermal conductivity coefficient second substrate 30.The mode of removing first substrate 201 can adopt chemical method for etching, dry etching or mechanical milling method, and the embodiment of the invention adopts chemical method for etching.
Fig. 5 is the schematic diagram of the manufacture method embodiment transparency conducting layer of the nitride-based light emitting device according to the present invention.On N type crystal layer with nitride 203, deposition forms transparency conducting layer 4, generation type can select deposition, sputter for use or electroplate in a kind of, transparency conducting layer 4 materials are at least one that select from the group that indium oxide (Indiumoxide), tin oxide (Tin oxide), tin indium oxide (Indium tin oxide), zinc oxide (Zincoxide), indium zinc oxide (Indium Zinc oxide), conductive nitride (CN) and magnesium oxide (Magnesium oxide) are formed.It is the material of transparency conducting layer 4 that the embodiment of the invention adopts indium oxide.
Fig. 6 is the manufacture method embodiment N type electrode and the P type electrode schematic diagram of the nitride-based light emitting device according to the present invention.The embodiment of the invention forms N type electrode 5 in deposition on the transparency conducting layer 4 respectively and forms P type electrode 6 with deposition on high thermal conductivity coefficient second substrate 30.Except that the deposition generation type, still can select a mode in sputter or the plating for use, to form N type electrode 5 and P type electrode 6.
Fig. 7 is the flow chart of the manufacture method of nitride-based light emitting device according to the present invention.The manufacture method of nitride-based light emitting device of the present invention is provided with the nitride light-emitting structure 20 and second substrate 30.
Step 75 for after a while wafer combination, form earlier the step 71 and the step 73 that forms second binder course of first binder course respectively, respectively at deposition first binder course 21 on the P type crystal layer with nitride 205 of nitride light-emitting structure 20, and on second substrate 30 of high thermal conductivity coefficient, deposit second binder course 31.Carry out the step 75 of combination, first binder course 21 and second binder course 31 are fixed by anchor clamps and be pressing each other Face to face, make nitride light-emitting structure 20 transposition on high thermal conductivity coefficient second substrate 30.And the preferred temperature value that first binder course 21 combines with second binder course 31 is 300 degree Celsius, and preferable force value is every square centimeter 4 kilogram weight (4kg/cm
2).
Then, form the step 77 of transparency conducting layer 4, remove first substrate 201 of nitride light-emitting structure 20,, and form transparency conducting layer 4 on N type crystal layer with nitride 203 so that the N type crystal layer with nitride 203 of nitride light-emitting structure 20 exposes to the open air.
At last, form the step 79 of electrode, form N type electrode 5 respectively on transparency conducting layer 4, and form P type electrode 6 on second substrate 30.
The above is preferred embodiment of the present invention only, is not in order to the utility model being done any pro forma restriction, and all relevant impartial modifications of doing according to claim of the present invention or change are all claim of the present invention and contain.
Claims (13)
1. the manufacture method of a nitride-based light emitting device is characterized in that comprising the following step:
The nitride light-emitting structure and second substrate are set, and this nitride light-emitting structure comprises: first substrate, and its material is an aluminium oxide; N type crystal layer with nitride is formed on this first substrate; And P type crystal layer with nitride is formed on this N type crystal layer with nitride;
Form first binder course on the P of this nitride light-emitting structure type crystal layer with nitride;
Form second binder course on this second substrate, the material of this second substrate is wherein any of semiconductor, metal or alloy material;
In conjunction with this first binder course and this second binder course;
Remove first substrate of this nitride light-emitting structure, so that the N type crystal layer with nitride of this nitride light-emitting structure exposes to the open air;
Form transparency conducting layer in this N type crystal layer with nitride;
Form N type electrode on this transparency conducting layer; And
Form P type electrode on this second substrate.
2. the method for claim 1 is characterized in that at least a metal that the material of this first binder course can be indium stannum alloy or selects from the group that metallic aluminium (Al), argent (Ag), metallic gold (Au), metallic nickel (Ni), metallic copper (Cu), metal platinum (Pt), Titanium (Ti) and Metal Palladium (Pd) are formed.
3. the method for claim 1, the thickness that it is characterized in that this first binder course is 1 micron.
4. the method for claim 1, the pattern of growth that it is characterized in that this first binder course is be selected from deposition, sputter or plating wherein a kind of.
5. the method for claim 1, the conductive coefficient that it is characterized in that this second substrate is greater than 150W/m-K.
6. the method for claim 1, the material that it is characterized in that this second substrate is metallic aluminium (Al).
7. the method for claim 1 is characterized in that the material of this second binder course comprises at least a metal of selecting from the group that metallic aluminium (Al), argent (Ag), metallic gold (Au), metallic nickel (Ni), metallic copper (Cu), metal platinum (Pt), Titanium (Ti) and Metal Palladium (Pd) are formed.
8. the method for claim 1, the thickness that it is characterized in that this second binder course is 1 micron.
9. the method for claim 1, the pattern of growth that it is characterized in that this second binder course is be selected from deposition, sputter or plating wherein a kind of.
10. the method for claim 1 is characterized in that combining of this first binder course and this second binder course, is to make this first binder course and this second binder course is fixed and be pressing each other Face to face by anchor clamps.
11. method as claimed in claim 10 is characterized in that this first binder course and the temperature value that combines of this second binder course are 300 degree (300 ℃) Celsius, force value is every square centimeter 4 kilogram weight (4kg/cm
2).
12. the method for claim 1 is characterized in that the mode of removing this first substrate can adopt chemical method for etching, dry etching or mechanical milling method.
13., it is characterized in that this transparency conducting layer is select at least a from the group that indium oxide (Indium oxide), tin oxide (Tin oxide), tin indium oxide (Indium tin oxide), zinc oxide (Zinc oxide), indium zinc oxide (Indium Zinc oxide), conductive nitride (CN) and magnesium oxide (Magnesium oxide) are formed as claim 1 a described method.
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CNB031501044A CN1306623C (en) | 2003-07-16 | 2003-07-16 | Method for manufacturing nitride luminous apparatus |
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CNB031501044A CN1306623C (en) | 2003-07-16 | 2003-07-16 | Method for manufacturing nitride luminous apparatus |
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CN1571174A CN1571174A (en) | 2005-01-26 |
CN1306623C true CN1306623C (en) | 2007-03-21 |
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CN100364123C (en) * | 2005-04-29 | 2008-01-23 | 清华大学 | Method for producing GaN-based illuminator device and its device structure |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5574744A (en) * | 1995-02-03 | 1996-11-12 | Motorola | Optical coupler |
CN1369920A (en) * | 2001-02-12 | 2002-09-18 | 国联光电科技股份有限公司 | LED and its preparing process |
-
2003
- 2003-07-16 CN CNB031501044A patent/CN1306623C/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5574744A (en) * | 1995-02-03 | 1996-11-12 | Motorola | Optical coupler |
CN1369920A (en) * | 2001-02-12 | 2002-09-18 | 国联光电科技股份有限公司 | LED and its preparing process |
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Effective date of registration: 20091218 Address after: Taoyuan County of Taiwan Province Co-patentee after: LUMENS Limited by Share Ltd. Patentee after: FORMOSA EPITAXY INCORPORATION Address before: Taoyuan County of Taiwan Province Patentee before: Formosa Epitaxy Incorporation |
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Granted publication date: 20070321 |